The invention discloses an
electroplating process method for preparing a deep-
etching thick
metal mask, and belongs to the technical field of micro electro
mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a
wafer by using positive
photoresist; then, carrying out seed layer
sputtering on the
wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative
photoresist, and a
thick photoresist layer with the thickness larger than that of a preset
metal coating is formed; and finally, the
electroplating area is electroplated, and the
metal coating with the preset thickness is obtained. According to the method, the negative
photoresist process is adopted, so that the transverse growth of the
metal coating is effectively inhibited, the perpendicularity of the side wall of the
metal coating is improved, and meanwhile, the damage to the surface of the
wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that
mushroom-shaped protrusions are easily formed on the edge of a plating layer,
crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.