151 results about "Polycrystalline material" patented technology

The invention provides a modified lithium-rich manganese-based positive electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of new energy. According to the modified lithium-rich manganese-based positive electrode material disclosed by the invention, multi-element point position doping is carried out on a base material to enhance the structural stability of a polycrystalline material, inhibit transition metal ion migration and interlayer dislocation, improve the internal lattice strength and manufacture a stable base material core; the heterostructure layer can greatly improve the surface structure phase change and transition metal dissolution of the material surface under high voltage, the stability of the surface of the matrix material is improved, and the rate capability of the material can be improved by the in-situ generated three-dimensional ion channel; the coating layer can effectively reduce side reaction of a solid-liquid interface, improve dissolution of metal ions on the surface and improve the cycle performance of the material; in a word, the internal structure and the surface of the material are effectively modified mainly through three means of doping, interface structure design and coating, the multiplying power of the material can be greatly improved, and the long-term service life of the material can be greatly prolonged.

Disclosed herein are methods for setting the radiation sensitivity and operational temperature range of ion-conducting polycrystalline radiation detectors. Disclosed herein are material fabrication methods for setting the ion-conducting polycrystalline microstructure and the grain boundary ion blocking characteristics in ion-conducting polycrystalline materials. The methods may include introducing a selected precursor element into the grain boundaries of the ion-conducting polycrystalline material. These methods may allow for the device detection threshold, dynamic range, and / or operational temperature range to be adjusted for ion-conducting polycrystalline radiation detectors. The methods disclosed herein allow for the design of high-sensitivity and high-performance radiation detectors that are low cost, non-toxic, environmentally robust, scalable, and able to operate in harsh environments (e.g., high temperature, high humidity, pressure, and / or corrosive).

New high entropy ceramics comprising rare earth oxides are disclosed. The new high entropy ceramic materials generally contain from five to ten different rare earth oxides with each of the rare earth oxides comprising a different rare earth element. The new ceramic materials may be substantially single-phase, polycrystalline materials. The new ceramic materials may realize improved properties, such as plasma etch resistance, among others.

The invention discloses a polycrystalline material microstructure crack evolution simulation and mechanical property prediction method and system. The method comprises the following steps: establishing a voronoi geometric model of a polycrystalline material containing grain characteristics and microstructure defect characteristics; carrying out spatial distribution modeling on the mechanical property parameters of the polycrystalline material based on a probability statistics theory; importing the voronoi geometric model of the polycrystalline material into a multi-physics field simulation software platform, establishing a complete simulation geometric model for crack prediction based on a phase field fracture theory, and performing phase field solution; setting corresponding material parameters according to the material attributes; and setting corresponding boundary conditions in simulation software to simulate a four-point bending experiment, solving a phase field fracture control equation by utilizing a finite element algorithm, capturing a change rule of a crack propagation path, and recording key mechanical data. According to the method, the polycrystalline Voronoi model is constructed, spatial distribution modeling is carried out on the mechanical parameters of the material in combination with the probability statistics theory, and the non-uniform characteristic of the actual material can be reflected more truly.

The invention relates to the technical field of preparation of single crystal materials, in particular to a low-cost lead-free piezoelectric single crystal with high piezoelectric response and a preparation method, the lead-free piezoelectric single crystal is of a lead-free perovskite structure, the chemical general formula of the lead-free piezoelectric single crystal is xBi < 0.5 > Na < 0.5 > TiO < 3-y > Bi < 0.5 > K < 0.5 > TiO < 3-(1-x-y) Bi < 0.5 > Li < 0.5 > TiO < 3 >, x is equal to 0-1, y is equal to 0-0.2, and x is equal to 0-1. The preparation method comprises synthesis of a multi-component lead-free precursor polycrystalline material, interface construction of a seed crystal and a polycrystalline substrate, and a high-temperature solid-phase epitaxial growth process. The components and various key process parameters of the material involved in the invention are finely controlled, the process window in the preparation process is narrow, reverse analysis is not easy to occur, and the preparation method has a remarkable technical barrier and is suitable for industrial popularization as a key preparation technology of the high-performance lead-free piezoelectric single crystal material.

The invention discloses a preparation method of a lithium cobalt oxide positive electrode material, the lithium cobalt oxide positive electrode material and a lithium battery, and relates to the technical field of lithium ion batteries. The method comprises the following steps: firstly, preparing a polycrystalline lithium cobalt oxide defective product and a single-crystal lithium cobalt oxide defective product, and respectively introducing doping elements in a first additive and a second additive into the polycrystalline lithium cobalt oxide defective product and the single-crystal lithium cobalt oxide defective product; a polycrystalline lithium cobalt oxide defective product, a third additive and a fourth additive are mixed and sintered, a sintering aid (the third additive contains a doping element M1) and a high-valence transition metal compound (the fourth additive contains a doping element M2) are matched, a high-melting-point Li-Co-M1-M2 phase is generated at the grain boundary, the grain boundary binding energy is improved, and therefore the compressive strength of the polycrystalline material is improved. After the grain boundary optimized lithium cobalt oxide defective product and the monocrystal lithium cobalt oxide defective product are graded, the lithium cobalt oxide positive electrode material with high compaction density can be obtained, and meanwhile, the positive electrode material can give consideration to rate performance and cycle performance.

The invention discloses a twin crystal nucleation position and variant selection prediction method based on machine learning, and belongs to the crossing field of material science and machine learning. The method comprises the following steps: acquiring microscopic structure data of a deformation material through electron back scattering diffraction, and constructing a multi-dimensional data set containing crystal grain parameters, crystal boundary parameters and deformation mechanism parameters by taking crystal grains and a certain crystal boundary combination as an analysis unit; and then modeling and predicting the twin crystal nucleation position and variant selection respectively by adopting a hierarchical machine learning modeling strategy. According to the method, the twinning behavior in the polycrystalline material can be efficiently and accurately predicted, and theoretical support and a technical path are provided for high-performance metal material design and plastic deformation mechanism research.

A latent heat storage includes a ceramic part, formed of a polycrystalline material, and including a closed space famed therein, and a metal part provided inside the closed space, and including copper.

The invention relates to a sulfur-antimony-lanthanum-barium compound, a sulfur-antimony-lanthanum-barium mid-far infrared birefringent optical crystal and a preparation method and application thereof, relates to a mid-far infrared birefringent crystal and a preparation method and application thereof, and aims to solve the problem of low birefringence of the existing mid-far infrared crystal, the sulfur-antimony-lanthanum-barium compound has the chemical formula of Ba2La2Sb4S10 (S2) and the molecular weight of 1424.22, is crystallized in a monoclinic system, and has the molecular weight of 294nm. The space group is P21 / c, and the cell parameters are as follows: a = 8.6373 (5), b = 14.7336 (9), c = 15.9161 (9), alpha = gamma = 90 degrees, and beta = 92.661 (2) degrees. Preparing a compound or a polycrystal material by using a high-temperature solution or a solid-phase method; a polycrystalline material is used for growing a single crystal, the birefringence of the single crystal is 0.53 at the position of 1064 nm, the single crystal has large birefringence within the range of 1-14 microns, and the single crystal is used in an optical isolator, a circulator, a beam shifter, an optical polarizer or an optical modulator.

New substantially single-phase polycrystalline materials are disclosed. The new substantially single-phase polycrystalline materials generally include from 0.01-20 mol. % zirconia, at least 80 mol. % of one or more rare earth oxides (REO), and 40 to 7000 ppm aluminum by weight, wherein the substantially single-phase polycrystalline material comprises at least 95 wt. % of a solid-solution of REO-zirconia as measured by x-ray diffraction. The new substantially single-phase polycrystalline materials may realize a high density, such as a density of at least 95% of theoretical density, or higher. The new substantially single-phase polycrystalline materials may be in the form of a semiconductor component, including those suited for use in a plasma chamber environment.

The invention provides a solar cell and a manufacturing method thereof, and relates to the field of solar cells. The invention aims to solve the problem that the passivation influence of laser on a textured P region is relatively large. The manufacturing method comprises the steps that a semiconductor substrate of a first conduction type is provided, the back face of the semiconductor substrate comprises first parts and second parts which are alternately arranged, and third parts located between the adjacent first parts and second parts; the first part comprises a first sub-part and a second sub-part, and the second sub-part is adjacent to the third part; forming a diffusion layer and a first mask layer; forming a tunneling passivation layer; forming a doped polycrystalline material layer and a second mask layer; removing the second mask layer on the third part and the second sub-part by utilizing first laser etching; and exposing the surface of the semiconductor substrate corresponding to the third part and the second sub-part by adopting a wet etching mode to form a step-shaped spacing structure. The manufacturing method has no adverse effect on passivation of the area where the emitter is located.

The invention relates to the technical field of grain size modeling, in particular to a pseudo-random high-fidelity modeling method for a multiphase polycrystalline material grain size microstructure, which comprises the following steps of: counting the size distribution, orientation distribution and orientation difference distribution among grains of each phase; carrying out statistics on size distribution, quantity proportion and orientation difference distribution between the categories of each category; constructing a geometric boundary; generating a core crystal grain reference point in the geometric boundary, arranging other crystal grain reference points in the residual space, and determining a growth weight according to a size relationship between adjacent crystal grains; and generating a grain size microstructure geometric model. According to the method, the weighted Voronoi method is introduced, and the weight is determined according to the spatial position relationship of the reference points and the expected growth size (target grain size), so that the growth rates of different grains in different directions are different, and the competitive growth behavior of the grains in an actual material is truly reproduced; the problem that in existing Voronoi modeling, the growth speed of crystal grains in all directions is uniform is solved, and the obtained microstructure model is beneficial for improving the simulation precision of the real mechanical behavior of the material.

A particulate cathode active material comprising (A) a base material according to the general formula Li1 + xTM1-xO2, where TM is a combination of Ni with at least one of Mn, Co and Al, and optionally at least another metal selected from the group consisting of Mg, Ti, Zr, Nb, Ta and W, and x is in the range of 0 to 0.2, and (B) crystallites of one or more cobalt compounds, where at least some of the cobalt is in the oxidation state of + III, where the base material (A) is a polycrystalline material, where x is greater than 0 and less than 1. The secondary particles of which consist of primary particles, and crystallites (B) of a cobalt compound are coated on the outer surfaces of these secondary particles, and one or more cobalt compounds are enriched at the surfaces of the primary particles in the voids between adjacent primary particles, and wherein 90% to 99.5% of the secondary particles exhibit such cobalt compound enrichment, all the detection results are determined through EDX and SEM / TEM imaging.

The present disclosure relates to a layered seed for growing a volume mono crystal by gas phase growth in a direction of growth (Y) in a crucible (1200). The layered seed comprises a monocrystalline growing layer (110) with a growing surface (112) for growing the volume mono crystal and an opposing heat spreader facing surface (114) for coupling the growing layer (110) to a heat spreader layer (140). The layered seed further comprises the heat spreader layer (140) with a growing layer facing surface (144) for coupling to the heat spreader facing surface (114) and an opposing mounting surface (142) for mounting the heat spreader layer (140) to the crucible (1200), wherein the heat spreader layer (140) comprises a polycrystalline material having thermally coupled grains (146) that are piled in the direction of growth (Y), the piled grains (146) for equalizing hot spots of the crucible thermally coupled to the mounting surface (142).

The invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline material arranged on a carrier substrate made of polycrystalline material, the manufacturing method comprising the following steps: a) providing a raw disk made of polycrystalline material having two faces; b) measuring at least one curvature parameter of the raw disk so as to define a first face with a convex profile and a second face with a concave profile, and selecting the first face to correspond to a front face of the carrier substrate at the end of step c); c) preparing the carrier substrate from the raw disk, involving mechanical and / or chemical treatment of the faces of the raw disk, the carrier substrate having a front face and a rear face corresponding to the first face and the second face of the raw disk, respectively; d) transferring the thin layer onto the front face of the carrier substrate in order to obtain the composite structure.

The invention relates to a device for non-destructive testing of mechanical parts made of polycrystalline material, said device comprising: - an ultrasonic probe (1) comprising a two-dimensional array of transducers capable of transmitting and receiving signals at different excitation angles, and - a processing module (2) adapted to control the transmission and reception of the transducers, to process the signals received by the transducers so as to express the signals received by the ultrasonic probe in two plane wave planes constituted by the transmission and reception wave vectors of the probe, and to derive therefrom information representative of the three-dimensional orientation of the fibrous structure of the mechanical part.

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

The present invention (A) General formula Li 1+x TM 1-x A core material made of O2, wherein TM is a combination of Ni, Al, at least one of Mn and Co, and at least one metal optionally selected from Mg, Zr, Ti, Nb, Ta and W, x is in the range of 0 to 0.2, and at least 80 mol% of TM is nickel. (B) A coating containing at least one boron compound in the oxidized state of (B)+III, Regarding cathode active materials containing, Here, the core material (A) is a polycrystalline material composed of primary particles as secondary particles, and the lattice constant ratio c / a determined by X-ray diffraction and Rietveld refinement is 4.9420 or less. 0.0009 ≤ λ ≤ 0.0024, where λ is the molar ratio of sulfate to TM determined by inductively coupled plasma spectroscopy (ICP), and the sulfate concentration is essentially constant across the secondary particle size.

This application provides a lithium-rich manganese-based cathode material, its preparation method, cathode sheet, and battery. The chemical formula of the lithium-rich manganese-based cathode material includes Li[Li] a Ni x Co y Mn z M d N e ]O 2‑f D f M is a metallic element, and the ionic radius of element M is greater than that of Mn. 4+ The oxidation state of element M is not less than +5; N includes at least one of Ce, Zr, Sn, La, Mg, Ti, Si, Sr, Se, Fe, Cr, V, Ca, Hf, Al, K, and Na; D includes at least one oxyacid anion of P and one oxyacid anion of S; the cathode material is a polycrystalline material, with at least a portion of the oxyacid anions of P and at least a portion of the oxyacid anions of S distributed at the grain boundaries of the primary particles of the cathode material, and at least a portion of M distributed within the lattice of the primary particles of the cathode material. The lithium-rich manganese-based cathode material of this application possesses both high ionic conductivity and low irreversible lattice oxygen loss under high voltage.

The invention discloses a preparation method of in-situ large-size high-density semiconductor-grade high-purity silicon carbide multi-crystal grains, and relates to a preparation method of a high-purity semiconductor-grade silicon carbide polycrystal material. The method aims at solving the technical problems that silicon carbide polycrystalline particles prepared by an existing method are small, secondary crystallization is needed, energy consumption is high, and the yield is low. The method comprises the following steps: preparing precursor resin as a nucleation seed crystal and an adhesive by adopting a non-catalytic suspension polymerization method; 2, preparing a silicon-carbon pre-sintered body; and 3, preparing the in-situ large-size high-purity semiconductor-grade silicon carbide polycrystalline material through a curing process, a self-propagating synergistic carbon thermal reduction reaction process, an in-situ silicon carbide grain growth process and an in-situ silicon carbide grain densification process. The particle size of the prepared silicon carbide multi-crystal grains is 0.8-20mm, the purity reaches 6N, the density reaches 1.6-2.5 g / cm < 3 >, the yield is 85-90%, and the silicon carbide multi-crystal grains can be used in the field of silicon carbide preparation.

A method to calculate performance of a magnetic element including a reference bilayer including a ferromagnetic reference layer having a reference magnetization and an antiferromagnetic layer pining the reference magnetization by exchange-bias, the antiferromagnetic layer including a metallic polycrystalline material having a grain volume distribution; the method including: measuring an exchange-bias field (Hex) of the antiferromagnetic layer as a function of temperature; fitting a grain volume distribution function to the measured exchange-bias fields (Hex) to determine parameters characterizing the volume distribution function; calculating a variation in the direction of the reference magnetization as a function of a direction of an exposure magnetic field (H); and calculating the exchange bias field (Hex) for any value of the in-plane exposure field (H).

The invention provides a double-layer crucible. The double-layer crucible comprises an outer circular tube-shaped container, an inner circular tube-shaped container and a T-shaped cylindrical plug, the double-layer structure can solve the problems of raw material loss and proportion imbalance caused in the process of filling the raw materials into the crucible, and the perovskite crystal which can be used for normal-temperature nuclear radiation detection can be industrially prepared by using the Bridgman method in an economic mode. And a vacuum cavity can be provided as a temperature buffer area, so that the thermal disturbance of a crystal growth interface is reduced. The method can also be used for atmosphere regulation and control, and component segregation caused by element volatilization is relieved. The invention also provides a method for preparing a perovskite polycrystal material and a method for preparing a perovskite single crystal.

This invention provides a near-space sublimation method for preparing cadmium telluride thin films containing a cadmium zinc telluride (CdZnTe) buffer layer. This method addresses the quality issues of existing cadmium telluride epitaxial films by using CdZnTe polycrystalline material as the growth source for the buffer layer, followed by the growth of the cadmium telluride epitaxial film on the buffer layer. First, the near-space sublimation furnace growth process parameters are set, and the pretreated CdZnTe polycrystalline growth source and GaAs substrate are placed into the near-space sublimation furnace to grow a 5-15 μm CdZnTe buffer layer on the GaAs substrate. Second, the CdZnTe polycrystalline growth source and the GaAs substrate with the grown buffer layer are removed from the near-space sublimation furnace cavity, and the growth process is repeated using a cadmium telluride growth source to prepare a cadmium telluride epitaxial film with a thickness of 300-400 μm.

Additive manufacturing of single crystal materials results in polycrystalline layers or grains, which may be reduced or eliminated by treatment with Al or optionally Pt. The thinning of the polycrystalline layer may be performed without mechanical or chemical removal of the polycrystalline material. A workpiece formed by the process may include a single crystal substrate; an interdiffusion region on the substrate; and a thermal barrier coating over the interdiffusion region, and the interdiffusion region diffuses the polycrystalline layer such that post-processing required to remove the polycrystalline layer is not required.

(A) General formula Li 1+x TM 1-x a core material based on O2, wherein TM is a combination of Ni and at least two of Mn, Co and Al, and optionally at least one further metal selected from Mg, Ti, Zr, Nb, Ta and W, where x is in the range of -0.05 to +0.05, and the nickel content is in the range of 80 to 99 mol% of TM; (B) particles of cobalt compound(s) in which at least some of the cobalt is in the +III oxidation state; (C) a shell containing at least one oxide of B or W 1. A cathode active material comprising: The core material (A) is a polycrystalline material in which secondary particles are composed of primary particles, and particles (B) of a cobalt compound are concentrated on the surfaces of the secondary particles.

The invention discloses a plasticity constitutive parameter inversion method for a zinc sulfide infrared optical brittle material, and belongs to the technical field of material mechanical property characterization. According to the method, a zinc sulfide material nanoindentation simulation model is constructed, a nanoindentation experiment is carried out, meanwhile, an Oliver-Pharr method and a Johnson-Cook constitutive equation are adopted to obtain actual material hardness, elastic modulus and plasticity parameters of zinc sulfide to serve as input material parameters, and an automatic simulation experiment is carried out; the method comprises the following steps: acquiring a simulation displacement-load curve under different constitutive parameter combinations, performing prediction optimization on the displacement-load curve by using a prediction network to obtain a Pareto frontier solution, and constructing an inversion model by using an entropy weight method to obtain an optimal solution in a Pareto frontier solution set. According to the research, accurate characterization of the plasticity constitutive behavior of the zinc sulfide infrared optical brittle material is realized, and reliable method support can be provided for constitutive parameter identification and intelligent modeling of other brittle polycrystalline materials.

The present disclosure provides a non-isothermal wet atomic layer etch (ALE) process for etching polycrystalline materials, such as metals, metal oxides and silicon-based materials, formed on a substrate. More specifically, the present disclosure provides various embodiments of methods that utilize thermal cycling in a wet ALE process to independently optimize the reaction temperatures utilized within individual processing steps of the wet ALE process. Like conventional wet ALE processes, the wet ALE process described herein is a cyclic process that includes multiple cycles of surface modification and dissolution steps. Unlike conventional wet ALE processes, however, the wet ALE process described herein is a non-isothermal process that performs the surface modification and dissolution steps at different temperatures. This allows independent optimization of the surface modification and dissolution reactions.

The invention relates to the technical field of single crystal furnaces, and discloses a five-stage temperature control 4.5-inch indium phosphide VGF single crystal furnace which is characterized in that a supporting base is arranged in a furnace body structure; the heating system comprises five groups of independently arranged electric heating coils which are longitudinally distributed along the furnace body structure according to a preset temperature gradient; the temperature measurement system comprises five groups of temperature detection points which are respectively in one-to-one correspondence with the five groups of electric heating coils; the quartz Dewar tube is arranged on the supporting base, a crucible and a polycrystal material are arranged in the quartz Dewar tube, the five groups of electric heating coils respectively correspond to five different positions of the quartz Dewar tube, and indium phosphide single crystal rods with the diameter of 114.3 mm can grow in the quartz Dewar tube. The area length of the temperature field uniformity and the control precision of the temperature gradient process are effectively improved, the growth length of the single crystal rod is effectively lengthened, the productivity of the single crystal rod is remarkably improved, and the yield and the productivity of the 4.5-inch indium phosphide single crystal rod are effectively improved.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

The utility model belongs to material processing technical field, concretely relates to a kind of polycrystalline material processing device for optical coating, including cleaning frame, ultrasonic cleaning mechanism is installed in cleaning frame lower end, lifting mechanism is installed in cleaning frame upper end, lifting mechanism transmission connection has mounting bracket, mounting bracket detachably installs basket, mounting rod is fixedly installed to the symmetry of basket upper end, mounting rod rear side is equipped with the slot, the through hole matched with mounting rod is equipped with in mounting bracket upper and lower penetration, mounting bracket inside is equipped with installation groove, the elastic sliding connection of installation groove inside is equipped with the clamping block matched with slot, unlocking piece matched with clamping block is installed in mounting bracket front end;The utility model can be conveniently disassembled basket by slot and clamping block, not only can the basket be disassembled to facilitate the unloading of polycrystalline material, also facilitate the selection of different size basket according to the size of polycrystalline material, convenient and fast operation.