528 results about "Polycrystalline material" patented technology

A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.

Polycrystalline compacts include hard polycrystalline materials comprising in situ nucleated smaller grains of hard material interspersed and inter-bonded with larger grains of hard material. The average size of the larger grains may be at least about 250 times greater than the average size of the in situ nucleated smaller grains. Methods of forming polycrystalline compacts include nucleating and catalyzing the formation of smaller grains of hard material in the presence of larger grains of hard material, and catalyzing the formation of inter-granular bonds between the grains of hard material. For example, nucleation particles may be mixed with larger diamond grains, a carbon source, and a catalyst. The mixture may be subjected to high temperature and high pressure to form in smaller diamond grains using the nucleation particles, the carbon source, and the catalyst, and to catalyze formation of diamond-to-diamond bonds between the smaller and larger diamond grains.

A method for growing a β-Ga₂O₃ single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a Ga_zO₃ light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-Ga₂O₃ single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a β-Ga₂O₃ single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-Ga₂O₃ single crystal is grown on a substrate of a β-Ga₂O₃ single crystal A light-emitting device comprises an n-type substrate produced by doping a β-Ga₂O₃ single crystal with an n-type dopant and a p-type layer produced by doping the β-Ga₂O₃ single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.

A method of forming an electronic component having elevated active areas is disclosed. The method comprises providing a semiconductor substrate in a processing chamber. The semiconductor substrate has disposed thereon a polycrystalline silicon gate and exposed active areas. The method further comprises performing a deposition process in which a silicon-source gas is supplied into the processing chamber to cause polycrystalline growth on the gate and epitaxial deposition on the active areas. The method further comprises performing a flash etch back process in which polycrystalline material is etched from the gate at a first etching rate and the epitaxial layer is etched from the active areas at a second etching rate. The first etching rate is faster than the second etching rate. The deposition process and the flash etch back process can be repeated cyclically, if desired. In certain other embodiments, the deposition process is a selective epitaxial deposition process, wherein growth occurs in non-oxide regions, but not in oxide regions.

Polycrystalline materials of macroscopic size exhibiting Single-Crystal-Like properties are formed from a plurality of Single-Crystal Particles, having Self-Aligning morphologies and optionally ling morphology, bonded together and aligned along at least one, and up to three, crystallographic directions.

The invention discloses a graded high-nickel ternary anode material, and a preparation method and an application thereof. The graded high-nickel ternary anode material is prepared by the following method: 1) mixing a high-nickel polycrystalline precursor with anhydrous LiOH and a doping additive, performing sintering, mixing the obtained product with a coating additive, and performing sintering toobtain a high-nickel polycrystalline material; 2) mixing a ternary monocrystalline silicon precursor with a lithium source and the doping additive, performing sintering, mixing the obtained product with the coating additive, and performing sintering to obtain a ternary monocrystalline silicon material; and 3) mixing the high-nickel polycrystalline material with the ternary monocrystalline siliconmaterial, or mixing the mixed material with the coating additive, and then performing sintering. The invention further discloses an application of the graded high-nickel ternary anode material in lithium batteries. The graded material prepared by the method provided by the invention has higher compaction and cycle stability than the single polycrystalline material, has higher capacity than the single monocrystalline silicon, and the gas production and service life problems of the battery can be effectively improved after the grading modification.

A fluidics apparatus for manipulation of at least one fluid sample is disclosed. A manipulation surface locates the fluid sample. A surface acoustic wave (SAW) generation material layer is provided. This is a polycrystalline material, textured polycrystalline material, biaxially textured polycrystalline material, microcrystalline material, nanocrystalline material, amorphous material or composite material. A transducer electrode structure arranged at the SAW generation material layer provides SAWs at the manipulation surface for interaction with the fluid sample. The manipulation surface has a phononic structure, for affecting the transmission, distribution and/or behaviour of SAWs at the manipulation surface. The apparatus is typically manufactured by reel-to-reel processes, to reduce the unit cost to a level at which the apparatus can be considered to be disposable after a single use.

An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.

PROBLEM TO BE SOLVED: To provide a method for growing a β-f-based single crystal which is less prone to be cracked even when it is worked into a large size and high quality substrate or the like. ŽSOLUTION: The β-Ga<SB>2</SB>O<SB>3</SB>single crystal 8 is allowed to grow in one orientation selected from a-axis <100> orientation, b-axis <010> orientation, and the orientation inclined by 13.7°, determined crystallographically, from c-axis toward a-axis and having an angle of 90° with respect to a-axis by heating a seed crystal 7 and a polycrystalline base material 9 while rotating the crystal 7 and the base material 9 mutually in the opposite directions by using an infrared heating single crystal manufacturing device 1. Ž

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

A method for quantifying the texture homogeneity of a polycrystalline material is described. The method involves selecting a reference pole orientation; scanning in increments a cross-section of the polycrystalline material having a thickness with scanning orientation imaging microscopy or other measuring technique to obtain actual pole orientations of a multiplicity of grains throughout the cross-section of the polycrystalline material. The orientation differences between the reference pole orientation and actual pole orientations of a multiplicity of grains is then determined. A value of misorientation from the reference pole orientation at each grain measured throughout the thickness is then assigned. The average misorientation of each measured increment throughout the thickness is then determined. A texture gradient and/or texture banding can then be obtained by determining the first and/or second derivative, respectively, of the average misorientation of each measured increment through the thickness of the sample used for evaluation. A method to predict the sputtering efficiency of a target is also described as well as a system for quantifying the texture homogeneity of a polycrystalline material.

Systems and methods for transient liquid phase bonding are described herein. Embodiments of these systems and methods utilize sandwich interlayers to produce stronger, more homogeneous bonds than currently possible. These sandwich interlayers comprise a middle bonding layer sandwiched between two outer bonding layers. The middle bonding layer comprises a different composition, and may even comprise a different form, than the outer bonding layers. In embodiments, these sandwich interlayers may be used to join a single crystal material to a polycrystalline material to make a gas turbine engine component, such as an integrally bladed rotor.

The present invention relates to a nondestructive testing method of X-ray diffraction which is used for detecting the internal defect of a workpiece which is made of crystal material (including single-crystal materials and polycrystalline materials) or material which contains atoms arranged in sequence along the one-dimensional space, and a device thereof, in particular suitable for detecting the internal defect of the workpiece made of material which consists of atoms of low atomic number. The method adopts the nondestructive test to get the intensity distribution map of diffraction of materials in all internal parts of the tested workpiece; then the nondestructive test is adopted to analyze the internal defect, the defect type and distribution of the tested workpiece. The X-ray tube radiation of easily available heavy metal anode target, which can be industrialized and practically applied, can be used in the rapid nondestructive test of the internal defect and the defect type of aluminum and magnesium workpieces which have a thickness of a plurality of millimeters; and the spatial resolution is superior to the existing X-ray detection machine and X-ray CT.

Methods of forming a polycrystalline compact using at least one metal salt as a sintering aid. Such methods may include forming a mixture of the at least one metal salt and a plurality of grains of hard material and sintering the mixture to form a hard polycrystalline material. During sintering, the metal salt may melt or react with another compound to form a liquid that acts as a lubricant to promote rearrangement and packing of the grains of hard material. The metal salt may, thus, enable formation of hard polycrystalline material having increased density, abrasion resistance, or strength. The metal salt may also act as a getter to remove impurities (e.g., catalyst material) during sintering. The methods may also be employed to faun cutting elements and earth-boring tools.

A method is disclosed for evaluating the physical properties of a sample, for example, the grain size in a polycrystalline material. An ultrasound field is generated in a local region of the sample with a non-contact source, such as a pulsed laser, such that the generated ultrasound diffuses away from said local region. After waiting until the generated ultrasound field has reached a diffusion regime, the resulting ultrasound field is measured with a non-contact detector. Parameters are adjusted in a mathematical model describing the predicted behaviour of the ultrasound field in the diffusion regime to fit the detected ultrasound field to the mathematical model. In this way, parameters dependent on the physical properties of the sample, such as the diffusion coefficient and absorption coefficient, can be derived. The grain size, for example, can be estimated from these parameters preferably by calibrating the diffusion coefficient to grain size.

The invention discloses a method for manufacturing a super-hard composite cutting blade. Firstly, carbide alloy or high-speed steel sheets prepared to be a base body of the cutting blade is cut into the needed size and shape. Secondly, the cutting tip portion is cut down, and the lateral surface of base body is manufactured with curve lines. Thirdly, the manufactured and formed base body of the cutting blade is placed inside a corresponding sintering mold, super-hard materials and composite powder are added into the missing cutting tip portion, and the super-hard materials and composite powder are transformed into super-hard polycrystalline materials and are fixedly combined with the base body of the cutting blade after being sintered under high temperature and high pressure. Fourthly, the super-hard polycrystalline cutting blade is made through the procedures of abrasive fabrication and blade-opening. The invention resolves problems of un-solid welding, easy peeling and high manufacture cost of an integral tool-holder super-hard cutter of the existing super-hard composite cutting blade. The invention not only increases the rigidity of the composite super-hard cutters, but also greatly reduces the using amount of super-hard material powder, and lowers the manufacture cost.