90 results about "Polycrystalline material" patented technology

The invention discloses a polycrystalline material microstructure crack evolution simulation and mechanical property prediction method and system. The method comprises the following steps: establishing a voronoi geometric model of a polycrystalline material containing grain characteristics and microstructure defect characteristics; carrying out spatial distribution modeling on the mechanical property parameters of the polycrystalline material based on a probability statistics theory; importing the voronoi geometric model of the polycrystalline material into a multi-physics field simulation software platform, establishing a complete simulation geometric model for crack prediction based on a phase field fracture theory, and performing phase field solution; setting corresponding material parameters according to the material attributes; and setting corresponding boundary conditions in simulation software to simulate a four-point bending experiment, solving a phase field fracture control equation by utilizing a finite element algorithm, capturing a change rule of a crack propagation path, and recording key mechanical data. According to the method, the polycrystalline Voronoi model is constructed, spatial distribution modeling is carried out on the mechanical parameters of the material in combination with the probability statistics theory, and the non-uniform characteristic of the actual material can be reflected more truly.

The invention relates to the technical field of preparation of single crystal materials, in particular to a low-cost lead-free piezoelectric single crystal with high piezoelectric response and a preparation method, the lead-free piezoelectric single crystal is of a lead-free perovskite structure, the chemical general formula of the lead-free piezoelectric single crystal is xBi < 0.5 > Na < 0.5 > TiO < 3-y > Bi < 0.5 > K < 0.5 > TiO < 3-(1-x-y) Bi < 0.5 > Li < 0.5 > TiO < 3 >, x is equal to 0-1, y is equal to 0-0.2, and x is equal to 0-1. The preparation method comprises synthesis of a multi-component lead-free precursor polycrystalline material, interface construction of a seed crystal and a polycrystalline substrate, and a high-temperature solid-phase epitaxial growth process. The components and various key process parameters of the material involved in the invention are finely controlled, the process window in the preparation process is narrow, reverse analysis is not easy to occur, and the preparation method has a remarkable technical barrier and is suitable for industrial popularization as a key preparation technology of the high-performance lead-free piezoelectric single crystal material.

The invention discloses a twin crystal nucleation position and variant selection prediction method based on machine learning, and belongs to the crossing field of material science and machine learning. The method comprises the following steps: acquiring microscopic structure data of a deformation material through electron back scattering diffraction, and constructing a multi-dimensional data set containing crystal grain parameters, crystal boundary parameters and deformation mechanism parameters by taking crystal grains and a certain crystal boundary combination as an analysis unit; and then modeling and predicting the twin crystal nucleation position and variant selection respectively by adopting a hierarchical machine learning modeling strategy. According to the method, the twinning behavior in the polycrystalline material can be efficiently and accurately predicted, and theoretical support and a technical path are provided for high-performance metal material design and plastic deformation mechanism research.

A latent heat storage includes a ceramic part, formed of a polycrystalline material, and including a closed space famed therein, and a metal part provided inside the closed space, and including copper.

New substantially single-phase polycrystalline materials are disclosed. The new substantially single-phase polycrystalline materials generally include from 0.01-20 mol. % zirconia, at least 80 mol. % of one or more rare earth oxides (REO), and 40 to 7000 ppm aluminum by weight, wherein the substantially single-phase polycrystalline material comprises at least 95 wt. % of a solid-solution of REO-zirconia as measured by x-ray diffraction. The new substantially single-phase polycrystalline materials may realize a high density, such as a density of at least 95% of theoretical density, or higher. The new substantially single-phase polycrystalline materials may be in the form of a semiconductor component, including those suited for use in a plasma chamber environment.

The invention relates to the technical field of grain size modeling, in particular to a pseudo-random high-fidelity modeling method for a multiphase polycrystalline material grain size microstructure, which comprises the following steps of: counting the size distribution, orientation distribution and orientation difference distribution among grains of each phase; carrying out statistics on size distribution, quantity proportion and orientation difference distribution between the categories of each category; constructing a geometric boundary; generating a core crystal grain reference point in the geometric boundary, arranging other crystal grain reference points in the residual space, and determining a growth weight according to a size relationship between adjacent crystal grains; and generating a grain size microstructure geometric model. According to the method, the weighted Voronoi method is introduced, and the weight is determined according to the spatial position relationship of the reference points and the expected growth size (target grain size), so that the growth rates of different grains in different directions are different, and the competitive growth behavior of the grains in an actual material is truly reproduced; the problem that in existing Voronoi modeling, the growth speed of crystal grains in all directions is uniform is solved, and the obtained microstructure model is beneficial for improving the simulation precision of the real mechanical behavior of the material.

A particulate cathode active material comprising (A) a base material according to the general formula Li1 + xTM1-xO2, where TM is a combination of Ni with at least one of Mn, Co and Al, and optionally at least another metal selected from the group consisting of Mg, Ti, Zr, Nb, Ta and W, and x is in the range of 0 to 0.2, and (B) crystallites of one or more cobalt compounds, where at least some of the cobalt is in the oxidation state of + III, where the base material (A) is a polycrystalline material, where x is greater than 0 and less than 1. The secondary particles of which consist of primary particles, and crystallites (B) of a cobalt compound are coated on the outer surfaces of these secondary particles, and one or more cobalt compounds are enriched at the surfaces of the primary particles in the voids between adjacent primary particles, and wherein 90% to 99.5% of the secondary particles exhibit such cobalt compound enrichment, all the detection results are determined through EDX and SEM / TEM imaging.

The invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline material arranged on a carrier substrate made of polycrystalline material, the manufacturing method comprising the following steps: a) providing a raw disk made of polycrystalline material having two faces; b) measuring at least one curvature parameter of the raw disk so as to define a first face with a convex profile and a second face with a concave profile, and selecting the first face to correspond to a front face of the carrier substrate at the end of step c); c) preparing the carrier substrate from the raw disk, involving mechanical and / or chemical treatment of the faces of the raw disk, the carrier substrate having a front face and a rear face corresponding to the first face and the second face of the raw disk, respectively; d) transferring the thin layer onto the front face of the carrier substrate in order to obtain the composite structure.

The invention relates to a device for non-destructive testing of mechanical parts made of polycrystalline material, said device comprising: - an ultrasonic probe (1) comprising a two-dimensional array of transducers capable of transmitting and receiving signals at different excitation angles, and - a processing module (2) adapted to control the transmission and reception of the transducers, to process the signals received by the transducers so as to express the signals received by the ultrasonic probe in two plane wave planes constituted by the transmission and reception wave vectors of the probe, and to derive therefrom information representative of the three-dimensional orientation of the fibrous structure of the mechanical part.

The present invention (A) General formula Li 1+x TM 1-x A core material made of O2, wherein TM is a combination of Ni, Al, at least one of Mn and Co, and at least one metal optionally selected from Mg, Zr, Ti, Nb, Ta and W, x is in the range of 0 to 0.2, and at least 80 mol% of TM is nickel. (B) A coating containing at least one boron compound in the oxidized state of (B)+III, Regarding cathode active materials containing, Here, the core material (A) is a polycrystalline material composed of primary particles as secondary particles, and the lattice constant ratio c / a determined by X-ray diffraction and Rietveld refinement is 4.9420 or less. 0.0009 ≤ λ ≤ 0.0024, where λ is the molar ratio of sulfate to TM determined by inductively coupled plasma spectroscopy (ICP), and the sulfate concentration is essentially constant across the secondary particle size.

This application provides a lithium-rich manganese-based cathode material, its preparation method, cathode sheet, and battery. The chemical formula of the lithium-rich manganese-based cathode material includes Li[Li] a Ni x Co y Mn z M d N e ]O 2‑f D f M is a metallic element, and the ionic radius of element M is greater than that of Mn. 4+ The oxidation state of element M is not less than +5; N includes at least one of Ce, Zr, Sn, La, Mg, Ti, Si, Sr, Se, Fe, Cr, V, Ca, Hf, Al, K, and Na; D includes at least one oxyacid anion of P and one oxyacid anion of S; the cathode material is a polycrystalline material, with at least a portion of the oxyacid anions of P and at least a portion of the oxyacid anions of S distributed at the grain boundaries of the primary particles of the cathode material, and at least a portion of M distributed within the lattice of the primary particles of the cathode material. The lithium-rich manganese-based cathode material of this application possesses both high ionic conductivity and low irreversible lattice oxygen loss under high voltage.

The invention discloses a preparation method of in-situ large-size high-density semiconductor-grade high-purity silicon carbide multi-crystal grains, and relates to a preparation method of a high-purity semiconductor-grade silicon carbide polycrystal material. The method aims at solving the technical problems that silicon carbide polycrystalline particles prepared by an existing method are small, secondary crystallization is needed, energy consumption is high, and the yield is low. The method comprises the following steps: preparing precursor resin as a nucleation seed crystal and an adhesive by adopting a non-catalytic suspension polymerization method; 2, preparing a silicon-carbon pre-sintered body; and 3, preparing the in-situ large-size high-purity semiconductor-grade silicon carbide polycrystalline material through a curing process, a self-propagating synergistic carbon thermal reduction reaction process, an in-situ silicon carbide grain growth process and an in-situ silicon carbide grain densification process. The particle size of the prepared silicon carbide multi-crystal grains is 0.8-20mm, the purity reaches 6N, the density reaches 1.6-2.5 g / cm < 3 >, the yield is 85-90%, and the silicon carbide multi-crystal grains can be used in the field of silicon carbide preparation.

A method to calculate performance of a magnetic element including a reference bilayer including a ferromagnetic reference layer having a reference magnetization and an antiferromagnetic layer pining the reference magnetization by exchange-bias, the antiferromagnetic layer including a metallic polycrystalline material having a grain volume distribution; the method including: measuring an exchange-bias field (Hex) of the antiferromagnetic layer as a function of temperature; fitting a grain volume distribution function to the measured exchange-bias fields (Hex) to determine parameters characterizing the volume distribution function; calculating a variation in the direction of the reference magnetization as a function of a direction of an exposure magnetic field (H); and calculating the exchange bias field (Hex) for any value of the in-plane exposure field (H).

The invention provides a double-layer crucible. The double-layer crucible comprises an outer circular tube-shaped container, an inner circular tube-shaped container and a T-shaped cylindrical plug, the double-layer structure can solve the problems of raw material loss and proportion imbalance caused in the process of filling the raw materials into the crucible, and the perovskite crystal which can be used for normal-temperature nuclear radiation detection can be industrially prepared by using the Bridgman method in an economic mode. And a vacuum cavity can be provided as a temperature buffer area, so that the thermal disturbance of a crystal growth interface is reduced. The method can also be used for atmosphere regulation and control, and component segregation caused by element volatilization is relieved. The invention also provides a method for preparing a perovskite polycrystal material and a method for preparing a perovskite single crystal.

This invention provides a near-space sublimation method for preparing cadmium telluride thin films containing a cadmium zinc telluride (CdZnTe) buffer layer. This method addresses the quality issues of existing cadmium telluride epitaxial films by using CdZnTe polycrystalline material as the growth source for the buffer layer, followed by the growth of the cadmium telluride epitaxial film on the buffer layer. First, the near-space sublimation furnace growth process parameters are set, and the pretreated CdZnTe polycrystalline growth source and GaAs substrate are placed into the near-space sublimation furnace to grow a 5-15 μm CdZnTe buffer layer on the GaAs substrate. Second, the CdZnTe polycrystalline growth source and the GaAs substrate with the grown buffer layer are removed from the near-space sublimation furnace cavity, and the growth process is repeated using a cadmium telluride growth source to prepare a cadmium telluride epitaxial film with a thickness of 300-400 μm.

Additive manufacturing of single crystal materials results in polycrystalline layers or grains, which may be reduced or eliminated by treatment with Al or optionally Pt. The thinning of the polycrystalline layer may be performed without mechanical or chemical removal of the polycrystalline material. A workpiece formed by the process may include a single crystal substrate; an interdiffusion region on the substrate; and a thermal barrier coating over the interdiffusion region, and the interdiffusion region diffuses the polycrystalline layer such that post-processing required to remove the polycrystalline layer is not required.

(A) General formula Li 1+x TM 1-x a core material based on O2, wherein TM is a combination of Ni and at least two of Mn, Co and Al, and optionally at least one further metal selected from Mg, Ti, Zr, Nb, Ta and W, where x is in the range of -0.05 to +0.05, and the nickel content is in the range of 80 to 99 mol% of TM; (B) particles of cobalt compound(s) in which at least some of the cobalt is in the +III oxidation state; (C) a shell containing at least one oxide of B or W 1. A cathode active material comprising: The core material (A) is a polycrystalline material in which secondary particles are composed of primary particles, and particles (B) of a cobalt compound are concentrated on the surfaces of the secondary particles.

The invention discloses a plasticity constitutive parameter inversion method for a zinc sulfide infrared optical brittle material, and belongs to the technical field of material mechanical property characterization. According to the method, a zinc sulfide material nanoindentation simulation model is constructed, a nanoindentation experiment is carried out, meanwhile, an Oliver-Pharr method and a Johnson-Cook constitutive equation are adopted to obtain actual material hardness, elastic modulus and plasticity parameters of zinc sulfide to serve as input material parameters, and an automatic simulation experiment is carried out; the method comprises the following steps: acquiring a simulation displacement-load curve under different constitutive parameter combinations, performing prediction optimization on the displacement-load curve by using a prediction network to obtain a Pareto frontier solution, and constructing an inversion model by using an entropy weight method to obtain an optimal solution in a Pareto frontier solution set. According to the research, accurate characterization of the plasticity constitutive behavior of the zinc sulfide infrared optical brittle material is realized, and reliable method support can be provided for constitutive parameter identification and intelligent modeling of other brittle polycrystalline materials.

The present disclosure provides a non-isothermal wet atomic layer etch (ALE) process for etching polycrystalline materials, such as metals, metal oxides and silicon-based materials, formed on a substrate. More specifically, the present disclosure provides various embodiments of methods that utilize thermal cycling in a wet ALE process to independently optimize the reaction temperatures utilized within individual processing steps of the wet ALE process. Like conventional wet ALE processes, the wet ALE process described herein is a cyclic process that includes multiple cycles of surface modification and dissolution steps. Unlike conventional wet ALE processes, however, the wet ALE process described herein is a non-isothermal process that performs the surface modification and dissolution steps at different temperatures. This allows independent optimization of the surface modification and dissolution reactions.

The invention relates to the technical field of single crystal furnaces, and discloses a five-stage temperature control 4.5-inch indium phosphide VGF single crystal furnace which is characterized in that a supporting base is arranged in a furnace body structure; the heating system comprises five groups of independently arranged electric heating coils which are longitudinally distributed along the furnace body structure according to a preset temperature gradient; the temperature measurement system comprises five groups of temperature detection points which are respectively in one-to-one correspondence with the five groups of electric heating coils; the quartz Dewar tube is arranged on the supporting base, a crucible and a polycrystal material are arranged in the quartz Dewar tube, the five groups of electric heating coils respectively correspond to five different positions of the quartz Dewar tube, and indium phosphide single crystal rods with the diameter of 114.3 mm can grow in the quartz Dewar tube. The area length of the temperature field uniformity and the control precision of the temperature gradient process are effectively improved, the growth length of the single crystal rod is effectively lengthened, the productivity of the single crystal rod is remarkably improved, and the yield and the productivity of the 4.5-inch indium phosphide single crystal rod are effectively improved.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

The utility model belongs to material processing technical field, concretely relates to a kind of polycrystalline material processing device for optical coating, including cleaning frame, ultrasonic cleaning mechanism is installed in cleaning frame lower end, lifting mechanism is installed in cleaning frame upper end, lifting mechanism transmission connection has mounting bracket, mounting bracket detachably installs basket, mounting rod is fixedly installed to the symmetry of basket upper end, mounting rod rear side is equipped with the slot, the through hole matched with mounting rod is equipped with in mounting bracket upper and lower penetration, mounting bracket inside is equipped with installation groove, the elastic sliding connection of installation groove inside is equipped with the clamping block matched with slot, unlocking piece matched with clamping block is installed in mounting bracket front end;The utility model can be conveniently disassembled basket by slot and clamping block, not only can the basket be disassembled to facilitate the unloading of polycrystalline material, also facilitate the selection of different size basket according to the size of polycrystalline material, convenient and fast operation.

The invention provides an MPCVD single crystal diamond and a batch growth method thereof, and aims to solve the problems of crystal quality reduction and poor growth consistency caused by uneven temperature and disordered growth of edge polycrystals during simultaneous growth of multiple seed crystals. The batch growth method comprises the following steps: firstly, shaping and cutting the edge of a seed crystal by using laser, so that a continuously changing curved surface with non-fixed crystal face orientation is formed on the side surface of the seed crystal, and lateral epitaxial growth is inhibited; then, the lateral edge of the seed crystal growth face is mechanically ground, a chamfer with a specific angle and a damage layer are formed, and the damage layer can induce generation of polycrystalline diamond with the controllable height and lower than the single crystal main growth face; and finally carrying out cleaning and deposition growth. Polycrystal is actively and controllably induced at the edge of the seed crystal, and the polycrystalline material is utilized to construct an effective heat conduction path among the seed crystals, so that temperature field homogenization among the multiple seed crystals in the growth process is realized, and the growth rate consistency, the crystallization quality and the production benefit of batch growth of single crystal diamonds are remarkably improved.

The invention discloses a dysprosium-based half-Heusler polycrystalline material and a preparation method and application thereof, the chemical formula of the polycrystalline material is Dy < 1-x > Y < x > Pt < 1-y > Ni < y > Sb, x and y represent atomic percent, x is more than or equal to 0 and less than 1.0, and y is more than or equal to 0 and less than or equal to 0.4; the preparation method comprises the following steps: weighing metal raw materials according to the stoichiometric ratio of the raw material composition Dy < 1-x > Y < x > Pt < 1-y > Ni < y > Sb, mixing Pt, Ni and Sb, and smelting to obtain a precursor Pt < 1-y > Ni < y > Sb; and carrying out secondary smelting on Dy and Y metal raw materials and the precursor Pt1-yNiySb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the polycrystalline material. The material is composed of dysprosium and yttrium as main rare earth elements matched with Pt and Sb elements, the peak thermoelectric figure of merit and the average thermoelectric figure of merit are remarkably improved through regulation and control of the component content and the double-layer synergistic effect of the preparation method, and the highest thermoelectric figure of merit can reach 1.33.

The present application relates to the field of material micro-experiment, and aims to provide a method for ensuring that a micro-column is a single crystal structure and determining the grain orientation of the micro-column in the process of preparing a single crystal micro-column in situ micro-experiment of polycrystalline material, so as to improve the accuracy and reliability of the in situ micro-experiment of the material. The technical scheme is: a method for preparing a single crystal micro-column with a specific crystal orientation in polycrystalline material based on an SEM-FIB-EBSD integrated system, comprising: polishing and fixing a polycrystalline material sample on a sample table; positioning a target area by an SEM probe, highlighting the grain boundaries of multiple crystals in the target area by irradiating the target area with a large beam of FIB; characterizing the irradiated target area by an EBSD probe, selecting a single crystal region corresponding to a crystal orientation of interest according to a grain orientation distribution map after characterization; based on the grain boundary shape of the single crystal region of interest in EBSD, locating the single crystal region by comparing and finding the same grain boundary shape under the FIB probe, and then precisely irradiating and preparing a single crystal micro-column by gradient adjusting the FIB beam.

This utility model relates to the field of polycrystalline material synthesis technology and discloses a polycrystalline synthesis apparatus, comprising: a pressure vessel having a receiving cavity; an ampoule disposed in the receiving cavity, the ampoule including a first heating section, a connecting section, and a second heating section connected in sequence, the diameter of the connecting section being smaller than the diameters of the first heating section and the second heating section; a loading boat with a nozzle at its head, the loading boat being disposed within the first heating section, one end of the nozzle extending downwards into the connecting section; a first heater located in the receiving cavity and surrounding the outer periphery of the first heating section; and a second heater located in the receiving cavity and surrounding the outer periphery of the second heating section; wherein the heating temperature of the first heater is higher than the heating temperature of the second heater. This utility model's polycrystalline synthesis apparatus improves product quality, reduces material loss, lowers production costs, and makes the polycrystalline synthesis process safer.

The invention provides a homogenization regulation and control method for growing CLYC crystals based on a moving heater method. The inherent defects of growing CLYC by an existing Bridgman-Stockbarger method are overcome. According to the invention, a doping ratio strategy of a solvent area and a polycrystal material is provided based on the distribution rule of Ce < 3 + > when the CLYC crystal is grown by a THM method, and the CLYC crystal is grown based on a moving heater method, so that the doping concentration is controllable, and the scintillation performance is remarkably improved.

This invention belongs to the field of crystal growth technology and discloses an erbium-doped bismuth silicate laser crystal and its preparation method. The features are: (1) The bismuth silicate laser crystal is a laser material, with erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The doping amount is 0.5~2 at.%, and the molecular formula of the bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by solid-state sintering. 12 Polycrystalline material, then doped with Bi4Si3O according to the stated doping amount. 12 Er₂O₃ is added to polycrystalline material, mixed evenly, and sintered to obtain erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate seed crystal, fix the seed crystal at the seed well part at the bottom of the crucible, load the doped polycrystalline material into the crucible and seal it, move it into the ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.

The invention discloses an oxide-doped LaB6 polycrystalline material and a preparation method and application thereof.The preparation method comprises the steps that lanthanum hexaboride and metal oxide are mixed, ball-milled to be uniform and dried to obtain first powder, the metal oxide is an oxide of M, and M is Al, Zr and Ti; the first powder is placed in a mold, the first powder is located in the center of the mold and has the same apparent density, in the inert gas atmosphere, the pressure is increased from the pressure P1 to the pressure P2, heat preservation is carried out for 0.5-3 h at the pressure P2 and the temperature of 1400-2000 DEG C, hot pressing sintering is carried out, cooling is carried out, meanwhile, pressure preservation is carried out for 0-3 h at the pressure P2, the LaB6 polycrystalline material doped with the oxide is obtained, the P1 ranges from 5 MPa to 9 MPa, and the P2 ranges from 20 MPa to 60 MPa. By adding the oxide phase, the sintering temperature of the pure LaB6 ceramic is reduced from 1975 DEG C to 1800 DEG C or below, the conductivity of the LaB6 ceramic is not deteriorated after doping, and the bending strength is effectively improved.

The application belongs to the technical field of nonlinear optical crystal and semiconductor functional crystal material, and relates to a growth method of lithium-rich yellow-green LiInSe2 single crystal and application thereof. The method comprises the following steps: S1, placing non-equimolar yellow-green LiInSe2 polycrystalline material in a pBN crucible with a seed crystal section, and then placing the pBN crucible in a quartz crucible, sealing the quartz crucible after vacuumizing to form a sealed double-crucible system; S2, completely melting the yellow-green LiInSe2 polycrystalline material by low-temperature overheating in a rotating state; S3, lowering the sealed double-crucible system from a high-temperature zone and passing through a temperature gradient zone to enter a low-temperature zone in a rotating state, and then pulling back the whole to re-enter the high-temperature zone after cooling; repeating the lowering-pulling back multiple times to complete the cycle of melting-recrystallization; and S4, cooling to room temperature to obtain the lithium-rich yellow-green LiInSe2 single crystal. The lithium-rich yellow-green LiInSe2 single crystal prepared by the method has significant advantages in single crystal rate, process robustness, crystallization quality and detection performance.