The present application relates to a method for growing a misoriented
silicon carbide single crystal by a
liquid phase method, and belongs to the technical field of
silicon carbide single crystal production. The method is performed by using a device for growing a
silicon carbide single crystal by a
liquid phase method, the device comprising a wedge-shaped
seed crystal holder and a wedge-shaped
seed crystal. The method comprises: arranging the wedge-shaped
seed crystal on the wedge-shaped seed
crystal holder to form a normal-oriented seed
crystal surface, and then growing
silicon carbide on the normal-oriented seed
crystal surface by a
liquid phase method to obtain a crystal
ingot comprising the wedge-shaped seed crystal and a grown
silicon carbide crystal; and taking the crystal
ingot off the wedge-shaped seed crystal holder, and performing multi-wire
slicing based on the inclined surface of the wedge-shaped seed crystal to obtain a misoriented
silicon carbide single crystal. The method of the present application forms a normal-oriented seed crystal surface by using the wedge-shaped seed crystal and the wedge-shaped seed crystal holder for liquid phase growth, and then obtains a misoriented silicon carbide single crystal by multi-wire
slicing. The method of the present application does not require a
crystal orientation step, can reduce the process of misoriented single-wire
slicing or flat
grinding, saves
processing time, and can recycle the new wedge-shaped seed crystal.