The invention discloses a method for accurately measuring
crystal axis orientation of
gallium oxide single crystal, and relates to the technical field of material science, and the method comprises the following steps: collecting acoustic
original data of the
gallium oxide single crystal through a
quantum entanglement sensor network; carrying out compression reconstruction
processing on the acoustic
original data, constructing a sound velocity
anisotropy tensor, and generating a lattice vibration characteristic spectrum; constructing an enzymatic reaction
kinetic model according to the lattice vibration characteristic spectrum, defining an enzymatic
differential equation, and calculating a steady-state
crystal orientation angle concentration value; mapping the steady-state
crystal orientation angle concentration value to a
wafer space coordinate, establishing a steady-state
crystal orientation angle concentration field
distribution matrix by solving a
diffusion equation, and converting the steady-state
crystal orientation angle concentration field
distribution matrix into a crystal axis orientation deviation thermodynamic diagram; through the superconducting sensor network in the
quantum entangled state, the spatial resolution and the
time resolution are improved, and the dependency of an existing physical characterization method on the flatness and cleanliness of the surface of a sample is overcome.