51 results about "Biaxial strain" patented technology

A method of fabricating a microelectronic die is provided. Transistors are formed in and on a semiconductor substrate. A channel of each transistor is stressed after the transistors are manufactured by first forming a diamond intermediate substrate at an elevated temperature on a handle substrate, allowing the intermediate substrate and the handle substrate to cool, and then removing the handle substrate. The intermediate substrate has a lower coefficient of thermal expansion than the handle substrate, so that the intermediate substrate tends to bow when the handle substrate is removed. Such bowing creates a tensile stress, which translates into a biaxial strain in channels of the transistors. Excessive bowing is counteracted with a compensating polysilicon layer formed at an elevated temperature and having a higher CTE on a side of the diamond intermediate substrate.

A process for forming contacts to a field effect transistor provides edge relaxation of a buried stressor layer, inducing strain in an initially relaxed surface semiconductor layer above the buried stressor layer. A process can start with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used. Trenches are etched through a pre-metal dielectric to the contacts of the FET. Etching extends further into the substrate, through the surface silicon layer, through the silicon germanium layer and into the substrate below the silicon germanium layer. The further etch is performed to a depth to allow for sufficient edge relaxation to induce a desired level of longitudinal strain to the surface layer of the FET. Subsequent processing forms contacts extending through the pre-metal dielectric and at least partially into the trenches within the substrate.

By combining a respectively adapted lattice mismatch between a first semiconductor material in a channel region and an embedded second semiconductor material in an source/drain region of a transistor, the strain transfer into the channel region is increased. According to one embodiment of the invention, the lattice mismatch may be adapted by a biaxial strain in the first semiconductor material. According to one embodiment, the lattice mismatch may be adjusted by a biaxial strain in the first semiconductor material. In particular, the strain transfer of strain sources including the embedded second semiconductor material as well as a strained overlayer is increased. According to one illustrative embodiment, regions of different biaxial strain may be provided for different transistor types.

A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

A method for achieving uniaxial strain on originally biaxial-strained thin films after uniaxial strain relaxation induced by ion implantation is provided. The biaxial-strained thin film receives ion implantation after being covered by a patterned implant block structure. The strain in the uncovered region is relaxed by ion implantation, which induces the lateral strain relaxation in the covered region. When the implant block structure is narrow (dimension is comparable to the film thickness), the original biaxial strain will relax uniaxially in the lateral direction.

Devices and methods for controlling magnetic anisotropy and orientation of magnetic single domain structures between stable states are provided based on piezoelectric thin films and patterned electrodes. By using patterned electrodes, piezoelectric strain is manipulated to achieve a highly localized biaxial strain in a piezoelectric substrate and rotate the magnetic anisotropy of magnetic materials. Reorientation of a magnetic single domain between different stable states is accomplished by pulsing voltage across pairs of electrodes. Since only a small region surrounding the electrodes is strained, the methods can be applied to arrays of indexed magnetic elements and to piezoelectric thin films clamped to silicon base substrates.

The invention discloses an experimental device for measuring pipe wall stress and frictional resistance coefficients. The experimental device comprises an air compressor, a first air bottle, a pressurizing pump, a plurality of pressure transmitters, a plurality of air storage branches, a plurality of high pressure horizontal pipelines, a plurality of biaxial strain rosettes, a plurality of differential pressure transducers, a plurality of pressure guide pipelines, a strain gauge, a data acquisition module, a computer, a plurality of elbows, a plurality of high pressure vertical pipelines, a second air bottle and a plurality of pressure returners. The invention further discloses an experimental method for measuring the pipe wall stress and frictional resistance coefficients by using the experimental device for measuring the pipe wall stress and frictional resistance coefficients. According to the method, the pipe wall stress and frictional resistance coefficients are measured according to data detected by the pressure transmitters, the differential pressure transducers and the strain gauge, and a guarantee is supplied to safe transportation of the petroleum industry.

The present disclosure provides a processing method for a polymer material to create a medical device with improved mechanical properties. This method allows better tailoring of the material's mechanical properties, hence a device to withstand greater structural loads in vivo. The method comprises providing an extruded polymer tube having an initial diameter and an initial length along a longitudinal direction, and longitudinally, bi-directionally straining the extruded polymer tube in a mold from the initial length to an expanded or extended length. The mold comprises a plurality of stationary heating elements. After longitudinally straining the tube, it is radially expanding in the mold from the initial diameter to an expanded diameter.

The invention discloses a method for realizing metasurface biaxial strain sensing by utilizing a polarization-phase-deformation relationship. According to the method, the strain condition of a to-be-detected structure is detected and evaluated by analyzing reflection data of multiple polarizations of a metasurface sensor. Compared with a traditional physical sensing method, the method can realizewireless and biaxial work, and is convenient to apply to a non-contact and complex environment; compared with a direct sensing method of a traditional metasurface type sensor based on frequency shiftor amplitude change, the strain sensing sensitivity of the sensing method is remarkably improved. The lantern-shaped metasurface unit structure designed by the invention has a high-sensitivity response relationship between an anisotropic phase and deformation, strain sensing of the metasurface is further obtained by means of derivation of the phase and polarization relationship, and stress can beaccurately detected and pre-judged.

The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.