84 results about "Piezoelectric substrate" patented technology

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

Provided is a filter device wherein electric power resistance can be improved.　A filter device according to the present invention comprises a plurality of elastic wave resonators (serial arm resonators S2a, S2b) that share a piezoelectric substrate 2 having a support member 3 and a piezoelectric film that is provided on said support member 3 and includes a piezoelectric layer 6, and each have a functional electrode (IDT electrode 7) that is provided on the piezoelectric film. In each of the plurality of elastic wave resonators, a cavity section 2a is provided in the support member 3 in a location that overlaps with the functional electrode in plan view. The support member 3 and the piezoelectric film are positioned such that a section of the support member 3 and a section of the piezoelectric film face each other with the cavity sections 2a interposed therebetween. The plurality of elastic wave resonators include at least one set of parallel-connected resonators, which are at least two elastic wave resonators that are connected in parallel to each other. The cavity sections 2a of the at least one set of parallel-connected resonators are separated from each other in at least one section by a partition wall 2b, which is a section of the support member 3.

A surface acoustic wave resonator comprising a multilayer piezoelectric substrate including a layer of piezoelectric material, and interdigital transducer (IDT) electrodes disposed on the layer of piezoelectric material, the IDT electrodes including a first and second bus bars, a first plurality of electrode fingers extending from the first bus bar toward the second bus bar, and a second plurality of electrode fingers extending from the second bus bar toward the first bus bar and interleaved with the first plurality of electrode fingers in a central region of the resonator, gap regions defined between tips of the first plurality of electrode fingers and the second bus bar and between tips of the second plurality of electrode fingers and the first bus bar, regions of piezoelectric material forming the layer of piezoelectric material in the gap regions having a lesser permittivity and / or piezoelectricity than the piezoelectric material in the central regions.

The present application relates to an elastic wave device and a communication device, the elastic wave device comprising: a package substrate; a piezoelectric substrate configured opposite to the package substrate and connected by a plurality of bumps; the bumps include a first bump also used for heat dissipation; a plurality of series resonators formed on the piezoelectric substrate, each series resonator is connected in series by a corresponding wiring; a cross-coupled capacitor formed on the piezoelectric substrate, a first end of the cross-coupled capacitor is connected to a first wiring between two series resonators, and a second end of the cross-coupled capacitor is connected to a first bump pad of the first bump joint. By utilizing the first bump used for heat dissipation as a path for the cross-coupled capacitor to the package substrate, the wiring can be effectively reduced, and the occupied area can be reduced.

This application discloses a surface acoustic wave (SAW) resonator, filter, and electronic device, relating to the field of resonators. The SAW resonator includes: a piezoelectric substrate; interdigitated electrodes located on one side surface of the piezoelectric substrate; the interdigitated electrodes include first and second fingers alternately arranged along a first direction, the first and second fingers extending along a second direction, the first and second directions intersecting in a plane parallel to the piezoelectric substrate; a first groove is formed in the surface of the piezoelectric substrate between adjacent first and second fingers; two reflective gratings are disposed on the same side surface of the piezoelectric substrate as the interdigitated electrodes; in the first direction, the interdigitated electrodes are located between the two reflective gratings; the reflective gratings include multiple third fingers arranged sequentially along the first direction; a second groove is formed in the surface of the piezoelectric substrate between adjacent third fingers. The technical solution of this application can improve the steepness of the filter in the transition band.

The present invention relates to an elastic wave device and a method of manufacturing the same, wherein the elastic wave device according to one embodiment comprises: a piezoelectric substrate having a first surface and a second surface; a support substrate having a third surface adjacent or in contact with the first surface to form a cavity defined by a space; a first adhesive layer disposed between the support substrate and the piezoelectric substrate, forming a bonding interface to join the first surface and the third surface; a second adhesive layer formed on at least one of the third surface and the first surface, which are surfaces where the bonding interface is not formed, the second adhesive layer being exposed within the cavity; and an IDT electrode formed on the second surface, and wherein a thickness of the first adhesive layer is greater than that of the second adhesive layer.

The application relates to the technical field of acoustic surface wave gyroscopes, in particular to a high-sensitivity MEMS acoustic surface wave gyroscope chip with enhanced acoustic wave of imitated swiftlets, which comprises a silicon substrate, the upper surface of the silicon substrate is provided with a piezoelectric substrate, the upper surface of the piezoelectric substrate is provided with a delay line, the delay line comprises a metal dot array, two interdigital transducers and two reflectors, the two interdigital transducers are respectively located on the left and right sides of the metal dot array, and the two reflectors are respectively located on the front and back sides of the metal dot array. The application effectively solves the problem of low detection sensitivity of the existing acoustic surface wave gyroscope and is suitable for the fields of aerospace, navigation, robots, automobiles and the like.

The application discloses a composite digital acoustic flow control chip, a preparation method and a multi-dimensional processing method. The chip comprises detachably connected upper and lower plates and a gap support assembly arranged between the upper and lower plates. The upper plate comprises a piezoelectric substrate, an acoustic surface wave interdigital electrode array arranged on the piezoelectric substrate, a first dielectric layer covering the interdigital electrode array, a conductive layer arranged on the first dielectric layer, and a first hydrophobic layer arranged on the conductive layer. By constructing the multi-dimensional acoustic wave control unit of the upper plate and the electrode array of the lower plate based on the dielectric wetting effect, the programmable and controllable movement of the droplet sample and the action of the acoustic surface wave in the droplet are realized, the digital control of the acoustic flow control technology is realized, and the capacity of the chip for sample enrichment, control, mixing and fixed-point heating is greatly improved through the design of multiple IDTs.

The present invention relates to an elastic wave device and a method for manufacturing the same, and the elastic wave device according to one embodiment of the present invention comprises: a support substrate having a first surface; a piezoelectric substrate having a second surface and a third surface, the second surface being adjacent to or in contact with the first surface of the support substrate to form a cavity defined as a space, and the third surface facing the second surface; a first adhesive layer provided between the support substrate and the piezoelectric substrate and forming a bonding interface to bond the first surface of the support substrate and the second surface of the piezoelectric substrate; a second adhesive layer formed on at least one of the first surface of the support substrate and the second surface of the piezoelectric substrate on which the bonding interface is not formed, and exposed in the cavity; and the interdigital transducer electrode is formed on the third surface of the piezoelectric substrate, and the thickness of the first bonding layer is larger than that of the second bonding layer.

The application discloses a surface acoustic wave device and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The surface acoustic wave device comprises a piezoelectric substrate, at least one first interdigital transducer, at least one second interdigital transducer, a reflection assembly and a mass load layer; the first interdigital transducer and the second interdigital transducer are electrically connected and are arranged on the piezoelectric substrate; the reflection assembly comprises at least a first reflector; in a first direction, the first reflector is arranged between the first interdigital transducer and the second interdigital transducer, and the first direction is the arrangement direction of the first interdigital transducer and the second interdigital transducer; and the mass load layer is arranged on the side of the first reflector away from the piezoelectric substrate. The application can improve the suppression effect of a specific frequency band (for example, a frequency band close to a passband) while ensuring that the passband insertion loss is not affected.

The utility model discloses a kind of composite piezoelectric substrate, elastic wave device and module, wherein the composite piezoelectric substrate includes: support layer, film thickness difference absorption layer and piezoelectric layer are sequentially laminated;Wherein, the difference between the compressive stress of the film thickness difference absorption layer and the compressive stress of the piezoelectric layer is within ±10% of the compressive stress of the piezoelectric layer.The composite piezoelectric substrate provided in the utility model embodiment can improve the uniformity of piezoelectric layer thickness, so as to improve the yield and characteristics of elastic wave device.

This utility model discloses an acoustic filter and a speaker device, including a filter housing, a speaker body, and a temperature control mechanism and a filtering mechanism, both installed inside the filter housing. A piezoelectric substrate is installed in the middle of the inner wall of the filter housing, located inside the first vacuum chamber. Multiple heating wires are evenly installed on the top of the arc-shaped base plate. A terminal post is interlaced between the bottom of the arc-shaped base plate and the inner wall of the filter housing. A temperature sensor is installed on one side of the outer wall of the filter housing. In this utility model, sound waves are filtered by the filtering mechanism inside the filter housing before being transmitted to the speaker. The temperature control mechanism in the filter housing senses the low temperature of the external environment through the temperature sensor, which triggers the heating wires to regulate the low temperature inside the filter housing, keeping it at a constant temperature and reducing the impact on sound wave transmission. This solves the problem that the large temperature difference between the inside and outside of the filter affects the sound wave filtering effect in actual use.

An acoustic wave device includes a piezoelectric substrate and IDT electrodes each including a first pitch portion with a relatively wide electrode finger pitch and a second pitch portion with a relatively narrow electrode finger pitch. A central region is located on a central side in a direction in which electrode fingers extend, and first and second edge regions are located on both sides of the central region. Mass addition films are in the first and second edge regions and include first mass addition films in the first pitch portion and second mass addition films in the second pitch portion. A length of the first mass addition film along an acoustic wave propagation direction is greater than a length of the second mass addition film.

An acoustic resonator (100) provides high-voltage electrical coupling and exhibits improved power handling characteristics and Q factor at the resonant frequency. The acoustic resonator (100) includes an interdigital transducer (IDT) (102) formed on a piezoelectric substrate (104). Each staggered finger electrode of the IDT (102) has a multilayer structure comprising a first layer (200) and a second layer (202), the second layer being disposed above the first layer (200) and separated from the first layer (200) by one or more bases (204). The thickness and width of the first layer (200), the second layer (202), and the one or more bases (204) are defined based on the wavelength of the sound wave to be generated by the IDT (102) at the resonant frequency of the acoustic resonator (100). The thickness of the first layer (200) is less than the thickness of each of the one or more bases (204) and the second layer (202), and the width of the one or more bases (204) is less than the width of each of the first layer (200) and the second layer (202).

This invention relates to the field of sensors, specifically to a multi-parameter sensing element, a multi-parameter sensor, and its design method for cryogenic applications. The scheme involves setting a reference channel and a sensing channel on a piezoelectric substrate. Each channel includes a SAW resonant unit composed of an interdigital transducer and a reflective grating, the SAW resonant unit being made of superconducting material. A functional sensitive layer is also positioned along the acoustic field propagation path of the SAW resonant unit in the sensing channel, making it sensitive to both temperature and non-temperature environmental parameters associated with the functional sensitive layer. The reference channel contains only the SAW resonant unit and is only sensitive to temperature. The sensor application of this invention allows for precise temperature measurement using the reference channel, and the result can be used to assist the sensing channel in resolving the values ​​of non-temperature environmental parameters. By integrating multiple channels with orthogonal sensing characteristics on the same piezoelectric substrate, this invention achieves independent decoupling of different parameters, enabling disturbance-free, high-sensitivity in-situ monitoring.

The application relates to the technical field of wireless communication, and provides a surface acoustic wave device, which comprises a supporting substrate, a piezoelectric substrate and an interdigital transducer; the supporting substrate is made of sapphire material; the interdigital transducer comprises first interdigital electrodes, second interdigital electrodes, and oppositely arranged first bus bars and second bus bars; the first interdigital electrodes are spaced from the second interdigital electrodes and the second bus bars, and the first interdigital electrodes and the second interdigital electrodes are opposite in polarity; the arrangement direction of the first interdigital electrodes and the second interdigital electrodes is the sound wave propagation direction; wherein the sapphire is r-surface sapphire, the crystal arrangement of the r-surface sapphire is in the shape of a regular hexagonal prism, the growth axis of the r-surface sapphire is perpendicular to the bottom surface thereof, and the [2-1-1] crystal direction of the r-surface sapphire is perpendicular to the normal projection of the growth axis on the r-surface and parallel to the sound wave propagation direction. The surface acoustic wave device can realize higher frequency, higher reliability and higher power.

The present invention relates to a method of manufacturing a piezoelectric on insulator (POI) structure, the method comprising: providing a donor substrate comprising a piezoelectric substrate, wherein the piezoelectric substrate comprises or consists of one of lithium tantalate and lithium niobate; transferring a piezoelectric layer from the piezoelectric substrate to a target substrate; and polishing the piezoelectric layer transferred to the target substrate using a chemical mechanical polishing (CMP) slurry, wherein the CMP slurry consists of an aqueous suspension of amorphous silicon, wherein the weight percentage of amorphous silicon is in the range of 4% to 18%.

An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. A layer of negative temperature coefficient of frequency dielectric material is disposed over one or more of the second plurality of acoustic wave resonators to control the temperature coefficient of frequency and improve temperature stability of the acoustic wave filter.

This invention discloses an elastic wave device, comprising: a piezoelectric substrate; a first trapezoidal filter formed on the piezoelectric substrate, the first trapezoidal filter including a first series resonator, a second series resonator, and a first parallel resonator; inter-resonator wiring for electrically connecting the first series resonator and the second series resonator; and a first ground pad electrically connected to the first parallel resonator; wherein the inter-resonator wiring is arranged closer to the outer edge of the piezoelectric substrate than the first parallel resonator and the first ground pad.

This invention provides a surface acoustic wave (SAW) filter, comprising a piezoelectric substrate, input / output pads, input / output busbars, a filter module, a ground pad, and an extended ground portion. The piezoelectric substrate is configured to support the input / output pads, input / output busbars, filter module, ground pad, and extended ground portion. The input pads are connected to the input terminal of the filter module via the input busbars, the output pads are connected to the output terminal of the filter module via the output busbars, and the ground terminal of the filter module is connected to the ground pad via the busbars. The ground terminal of the filter module is positioned between the input and output pads. The extended ground portion is connected to the ground terminal of the filter module and is configured to extend from the ground terminal and cover a first range along a direction parallel to the input and output busbars.

A die includes at least two surface acoustic wave resonators having different resonant frequencies. A first of the at least two surface acoustic wave resonators includes first interdigital transducer electrodes having a first duty factor and disposed on a multilayer piezoelectric substrate. The multilayer piezoelectric substrate a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a second material different from the piezoelectric material. A second of the at least two surface acoustic wave resonators includes second interdigital transducer electrodes having a second duty factor different from the first duty factor and disposed on the multilayer piezoelectric substrate to improve band balance of a device formed from the at least two surface acoustic wave resonators.

The present invention relates to a method for manufacturing a piezoelectric structure on an insulator (POI), comprising providing a donor substrate including a piezoelectric substrate, wherein the piezoelectric substrate comprises or is composed of either lithium tantalate or lithium niobate, transferring a piezoelectric layer from the piezoelectric substrate to a target substrate, and polishing the transferred piezoelectric layer on the target substrate with a chemical-mechanical polishing suspension (CMP), wherein the CMP suspension consists of an aqueous suspension of amorphous silicon with a weight percentage of amorphous silicon in the range of 4 to 18. Figure 2 is shown in the abstract.

The application relates to the technical field of surface acoustic waves, and discloses a TC-SAW resonator and a filter, wherein the TC-SAW resonator comprises a piezoelectric substrate, an electrode layer and a temperature compensation layer which are sequentially stacked; the electrode layer comprises an interdigital transducer, the interdigital transducer comprises two oppositely arranged bus bars, the bus bars are respectively connected with finger strips, the finger strips extend towards the opposite bus bar but have a gap with the opposite bus bar, so that the electrode layer comprises an active area formed by the finger strips alternately arranged and gap areas respectively formed at two ends of the active area; the upper surface of the temperature compensation layer is provided with two pairs of protruding structures and recessed structures, in the orthographic projection towards the electrode layer, the two pairs of protruding structures and recessed structures are arranged between the two bus bars and are arranged parallel to the extension direction of the bus bars, the recessed structures cover at least part of the gap areas, and the protruding structures cover at least part of the active area. The application can improve the stray suppression capability of the TC-SAW resonator.

An acoustic wave filter includes a piezoelectric substrate, series-arm resonators disposed at the piezoelectric substrate, an external connection terminal disposed at the piezoelectric substrate and connected to an antenna connection terminal, an external connection terminal disposed at the piezoelectric substrate and connected to an amplifier, a wire disposed at the piezoelectric substrate and electrically connecting the external connection terminal to the series-arm resonator, a wire disposed at the piezoelectric substrate and electrically connecting the external connection terminal to the series-arm resonator, and a shield that covers a part of a side surface of the piezoelectric substrate, wherein the shield covers at least a part of an area of the side surface of the piezoelectric substrate opposing the wire without covering an area of the side surface of the piezoelectric substrate opposing the wire.

A method of making a surface acoustic wave package includes bonding a piezoelectric layer over a substrate and attaching a metal structure over the substrate, with the piezoelectric layer positioned between at least a portion of the substrate and at least a portion of the metal structure. The method also includes removing (e.g., etching) an outer boundary of the piezoelectric layer so that a resulting outer edge of the piezoelectric layer is spaced inward of an inner edge of the metal package (e.g., the piezoelectric layer does not contact the metal package). The method inhibit damage to the piezoelectric layer due to a stress differential between the substrate and the thermally conductive structure during a packaging process.

An elastic wave element with excellent electrical characteristics is achieved. The elastic wave resonator comprises: a piezoelectric substrate including a piezoelectric element and an IDT electrode, a support substrate, and a first intermediate layer. In the first intermediate layer, the atomic ratio of metal elements is greater than that of metal elements in the piezoelectric element, and the atomic ratio of oxygen is less than that of oxygen in the piezoelectric element. The thickness of the piezoelectric element is less than 5 times the maximum spacing of the electrode fingers of the IDT electrode.

The application relates to a filter, a radio frequency front end module and electronic equipment, the filter comprising a piezoelectric substrate, at least three bus bars and a plurality of electrode fingers arranged on the piezoelectric substrate, the bus bars being arranged at intervals along a first direction, a plurality of electrode fingers being arranged between any two adjacent bus bars, the electrode fingers being connected to one bus bar and being spaced from another bus bar, and each electrode finger being alternately arranged along a second direction; the bus bars comprising at least one first bus bar, electrode fingers being arranged on both sides of the first bus bar, and the end portions of the electrode fingers being spaced from the first bus bar being fitted to form a first fitting line; along the second direction, the spacing between the first fitting line and the first bus bar is arranged to be variable; and at different positions along the second direction, the spacing between the two adjacent fitting lines on both sides of the same first bus bar along the first direction is equal. The filter of the application ensures the miniaturization of the filter while adjusting the spacing between the first bus bar and the spaced electrode fingers.