506 results about "Piezoelectric substrate" patented technology

An acoustic wave device includes an IDT electrode and reflector electrodes on or above a piezoelectric substrate. A region in which first and second electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction defines an intersection region. The intersection region includes a center region and first and second edge regions on both sides of the center region. Dielectric films extend from the first and second edge regions to outer side regions in the acoustic wave propagation direction of the reflector electrodes via the reflector electrodes.

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers. Virtual lines connecting tips of distal end portions of the first and second fingers are respectively referred to as first and second envelopes. An overlap region is between the first and second envelopes and includes at least one curved-line region, in which the first and second electrode fingers have a curved plan-view shape. In the curved-line region, each of the first and second electrode fingers has a non-constant curvature.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion, a second portion between the center region and the first portion, and a third portion between the center region and the second portion. The first portion and the third portion have liner densities greater than liner densities of the second portion and the finger in the center region.

An acoustic wave device includes a piezoelectric substrate, a transducer, and a depression. The transducer is disposed on a surface of the piezoelectric substrate, and includes a first bus bar, a first electrode, a second bus bar, and a second electrode. The first bus bar and the second bus bar extend along a second direction. The first electrode has a first end and extends from the first bus bar along a first direction. The first electrode and the second electrode are spaced apart from each other, and a gap is formed between the first end of the first electrode and an edge of the second bus bar. The depression is formed in the piezoelectric substrate and is depressed from the surface of the piezoelectric substrate. The first end of the first electrode is continuously joined to a sidewall of the depression along a depth direction.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The piezoelectric layer has a trench in the border region. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The second width is narrower than the first width and the third width.

A multiplexer includes first and second filters, a resin layer, and an electrically conductive layer. A pass band of the first filter is different from a pass band of the second filter. The first filter is in contact with an electrically conductive layer, and the second filter is not in contact with the electrically conductive layer. The second filter has a greater thermal resistance value than the first filter, and lowers the pass band in response to a temperature rise. A region of the piezoelectric substrate closer to the first filter is a first region, and a region of the piezoelectric substrate farther from the first filter is a second region. Areas in the first and second regions where an acoustic wave resonator included in a parallel-arm circuit is provided are first and second areas. The second area is greater than the first area.

A method for fabricating a sensor device that includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigitated transducer (IDT) formed on a substrate having at least a layer of a piezoelectric material. The SAW sensor includes either one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna, a matching circuit and a waveguide are formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer and a functional electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer includes at least a first region and a second region with crystal orientations different from each other. The functional electrode overlaps the first region and the second region in plan view.

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The invention relates to the field of electronic component preparation processes, in particular to a high-performance temperature compensation surface acoustic wave filter and a manufacturing method thereof. An interdigital transducer, wherein the interdigital transducer is located at one side of the piezoelectric substrate; the transition layer is located on the side, away from the piezoelectric substrate, of the interdigital transducer, and the transition layer covers the interdigital transducer and prevents metal elements of the interdigital transducer from diffusing outwards; the functional layer is located on the side, away from the interdigital transducer, of the transition layer, the functional layer covers an active area of a metal finger strip of the interdigital transducer to form a high-sound-velocity area, the end, away from the active area, of the metal finger strip of the interdigital transducer forms a low-sound-velocity area, and a sound velocity difference is formed between the high-sound-velocity area and the low-sound-velocity area; therefore, transverse mode clutters are suppressed; the temperature compensation layer is located on the side, away from the transition layer, of the functional layer, and the temperature compensation layer covers the functional layer and the piezoelectric substrate; lateral mode clutters in TC-SAW are suppressed, and metal diffusion is suppressed at the same time.

An acoustic wave device has a substrate, an optional functional layer disposed over at least a portion of the substrate, a piezoelectric layer disposed over at least a portion of the functional layer and / or substrate, and an interdigital transducer electrode disposed on the piezoelectric layer. The piezoelectric layer has an outer edge spaced inward of an outer edge of the substrate, the outer edge of the piezoelectric layer being tapered at an angle relative to a surface of the substrate to thereby reduce an acoustic reflection magnitude at said outer edge of the piezoelectric layer.

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

To provide a coating robot which suppresses decrease in a coating film thickness and can achieve improvement in coating quality.SOLUTION: A head control part 90 of a coating robot 10 performs recovery control for controlling drive of a piezoelectric substrate 62 so that when it is determined that a specific nozzle 54 is a defective nozzle 54a that is defective in discharge of droplets, a size of droplets of good dot D2 around defective dot D1 increases. In the recovery control, when the good dot D2 around the defective dot D1 reaches a boundary of a coating range in a coating part, boundary discharge such that the size of droplets of the good dot D2 becomes equal to a droplet size in a usual discharge state when the recovery control is performed is executed.SELECTED DRAWING: Figure 2

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer and a support substrate stacked on a second main surface side of the piezoelectric layer, a first electrode layer between the support substrate and the piezoelectric layer and not connected to a signal potential, and an IDT electrode on a first main surface of the piezoelectric layer and including electrode fingers. A region where adjacent electrode fingers overlap each other is a crossing region. The first electrode layer is provided at a position overlapping the crossing region in plan view. The piezoelectric substrate includes a first formation region overlapping the crossing region and the first electrode layer and a first non-formation region overlapping the crossing region and not overlapping the first electrode layer, and the first non-formation region overlaps a portion between the adjacent electrode fingers.

An acoustic wave device according to the present invention includes a piezoelectric substrate including a piezoelectric layer, a functional electrode provided on the piezoelectric layer, a first support layer provided on the piezoelectric substrate so as to surround the functional electrode, a covering portion provided on or above the first support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface, a silicon oxide layer provided on the first main surface side of the covering portion, and an inductor provided on the silicon oxide layer and made of a wire. The covering portion is made of silicon. The acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the silicon oxide layer.

The present application relates to the technical field of acoustic wave device, and particularly relates to a preparation method of piezoelectric substrate, piezoelectric substrate and acoustic wave device. The method comprises the following steps: obtaining a supporting substrate; making a carrier trapping layer on the supporting substrate; making a dielectric layer on the carrier trapping layer; and making a piezoelectric film layer on the dielectric layer; wherein, the surface of the supporting substrate close to the carrier trapping layer is a first surface, and the surface of the dielectric layer close to the carrier trapping layer is a second surface; before making the piezoelectric film layer on the dielectric layer, the method further comprises making a scattering interface between the first surface and the second surface, and the scattering interface is used for scattering spurious waves. The carrier trapping layer can effectively inhibit the surface parasitic conductance effect, prevent the resistivity of the substrate from decreasing, and thus improve the loss and distortion of the piezoelectric substrate. The scattering interface can effectively inhibit the spurious waves caused by the interface reflection of the multilayer structure in the acoustic wave device, and thus improve the working stability of the device at high frequency.

The invention discloses a reduced graphene oxide biochip based on a piezoelectric substrate and a preparation method and application thereof, the reduced graphene oxide biochip based on the piezoelectric substrate comprises a sound transduction unit and at least one detection unit connected to the sound transduction unit, and a microfluid channel layer is arranged between the sound transduction unit and the detection unit. A reduced graphene oxide layer is directly formed on the surface of a piezoelectric layer of a detection unit, a biological recognition element is fixed on the reduced graphene oxide layer, and the biological recognition element is used for being combined with target biological molecules to generate a reaction product with electron donating and receiving capacity. On the basis, the acoustic transduction electrode design of a concentric interdigital electrode structure is adopted, and the acoustic surface wave intensity which is more concentrated compared with other electrode structures is generated by utilizing the focusing effect of the concentric electrode structure; the flow velocity of the fluid to be measured in the microfluid channel is faster, and the directivity is stronger and more concentrated.

The invention discloses a microfluidic sorting chip and method based on the synergistic effect of multistage surface acoustic waves and sheath flow. The chip comprises a piezoelectric substrate; the PDMS micro-fluidic channel comprises a sample inlet, a sheath flow inlet, a sorting main flow channel for sorting microorganisms, and a collecting unit arranged at the tail end of the sorting main flow channel; the sheath flow inlet is converged from two sides of the sorting main flow channel through two flow paths, and forms hydrodynamic focusing with sample liquid conveyed by the sample inlet in the sorting main flow channel; the number of the multi-stage IDT arrays is four, every two of the multi-stage IDT arrays are symmetrically distributed along the two sides of the sorting main flow channel, the working frequency of the multi-stage IDT arrays is 100-150MHz, and the multi-stage IDT arrays are used for generating a superposition sound field with high energy density. According to the invention, four groups of high-frequency IDT arrays are used for generating a superposed sound field, and a PDMS sorting channel and a double-channel sheath flow system are combined, so that the sorting problem of microorganisms with acoustic contrast factors smaller than 0 is solved.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first thickness, a second portion with a second thickness between the center region and the first portion, and a third portion with a third thickness between the center region and the second portion. The finger in the center region has a fourth thickness. The first thickness and the third thickness are thicker than the second thickness and the fourth thickness.

The invention relates to a filter, a radio frequency front-end module and electronic equipment, the filter comprises a piezoelectric substrate, a first reflecting grating and two interdigital transducers, the first reflecting grating and the two interdigital transducers are arranged on the surface of the piezoelectric substrate, and the two interdigital transducers are respectively arranged on two opposite sides of the first reflecting grating; the first reflecting grating comprises a first finger strip, a second finger strip and a third finger strip which are connected, and the first finger strip and the second finger strip are arranged on the two sides of the third finger strip in the first direction; wherein the distance between the central axis of the third finger strip adjacent to the first finger strip and the central axis of the adjacent first finger strip is a first distance, the distance between the central axis of the third finger strip adjacent to the second finger strip and the central axis of the adjacent second finger strip is a second distance, and the first distance is not equal to the second distance. According to the filter disclosed by the invention, the first interval is unequal to the second interval by adjusting the intervals among the first finger strip, the second finger strip and the third finger strip in the first reflecting grating shared by the two interdigital transducers, so that the Q value of the filter disclosed by the invention is improved.

An acoustic wave device has a multilayer piezoelectric substrate (MPS) structure and a multilayer interdigital transducer electrode (IDT). The multilayer piezoelectric substrate includes a piezoelectric layer over a support substrate. An additional (functional) layer can optionally be interposed between the piezoelectric layer and the support substrate, which can facilitate bonding between these layers and provide temperature compensation. The multilayer IDT is disposed over the piezoelectric layer and includes a first layer of a first material with higher density and a second layer of a different material with lower density. The interdigital transducer electrode also includes (mass loading) strips disposed over (e.g., adjacent, in contact with) the second layer, which advantageously facilitate suppression of transverse mode.

A multiplexer is disclosed. The multiplexer can include a multilayer piezoelectric substrate surface acoustic wave device that includes at least a portion of a transmission filter. The multiplexer can include a temperature compensated surface acoustic wave device that includes at least a portion of a reception filter. The reception filter is electrically connected to the transmission filter.

The invention discloses a surface acoustic wave resonator and a filter. The resonator comprises an interdigital transducer arranged on a piezoelectric substrate, reflecting gratings located on the two sides of the interdigital transducer and at least one laminated protection structure arranged in the outer side area of the reflecting gratings. The laminated protection structure comprises an interdigital capacitor arranged on the surface of the piezoelectric substrate and an organic material layer covering the interdigital capacitor; two bus bars of the interdigital capacitor are electrically connected with two signal ports of the resonator respectively, and the interdigital capacitor is connected with the interdigital transducer in parallel. According to the invention, the anti-ESD capability of the resonator can be effectively improved under the condition of not increasing additional process steps and not changing the electrode structure of the normal working area of the resonator.

The invention belongs to the field of acoustic particle control and surface acoustic wave devices, and aims to solve the problems of low efficiency, low precision and difficulty in realizing a complex space structure in traditional biological assembly. The invention provides an integrated programmable surface acoustic wave particle patterning control system. A first surface of a piezoelectric substrate is provided with an interdigital transducer area, a control area and other areas; the interdigital transducer is used for realizing two-way transmission of an electric signal and a sound signal through a piezoelectric effect so as to regulate and control a sound field pattern in real time; the upper computer is used for providing waveform data and a driving instruction required by the surface acoustic wave signal source board card, and the surface acoustic wave signal source board card generates resonant frequency required by the surface acoustic wave transducer based on the waveform data and the driving instruction so as to excite the surface acoustic wave device to perform particle control. The invention provides a new technical path for miniaturization, high efficiency and precision of biological assembly.

The invention provides a cytometer and a cell rotation method, the cytometer comprises a piezoelectric substrate made of a piezoelectric material and a transducer, and the piezoelectric substrate comprises a sample placing area for placing cell sap to be detected; the transducer comprises a first interdigital transducer and a second interdigital transducer which are oppositely arranged on the piezoelectric substrate, and the sample placement area is located between the first interdigital transducer and the second interdigital transducer; wherein the first interdigital transducer and the second interdigital transducer are used for driving the piezoelectric substrate to vibrate so as to spread surface acoustic waves in cell sap in the sample placement area, the width of an area corresponding to the cell sap in the sample placement area is related to the wavelength of the surface acoustic waves, and the surface acoustic waves are used for forming at least two vortexes in the cell sap; the vortex drives cells in the cell sap to rotate orderly, the area width is the width of the cell sap in the propagation direction of the surface acoustic wave, the cells in multiple vortexes can be clearly observed in the cell rotation process, and in-situ control over multiple biological particles is achieved.

The invention relates to a wireless passive three-signal sensor and a preparation method, and belongs to the technical field of sensor manufacturing, the wireless passive three-signal sensor comprises a piezoelectric substrate, the piezoelectric substrate is provided with a hydrogen sensitive film, a temperature sensitive film, a strain sensitive film, an IDT and a reflecting grating, the hydrogen sensitive film, the temperature sensitive film and the strain sensitive film are located on the surface of the piezoelectric substrate at intervals, and the IDT and the reflecting grating pass through the surfaces of the hydrogen sensitive film, the temperature sensitive film and the strain sensitive film and correspondingly adopt different IDT center frequencies and interdigital periods. According to the invention, synchronous monitoring of three parameters of temperature, strain and hydrogen can be realized in a wireless passive mode, and the system can be applied to various scenes requiring multi-parameter monitoring, thereby providing reliable technical support for monitoring in related fields.

The invention discloses a microfluidic pre-focusing chip, and belongs to the technical field of microfluidics, the chip comprises a piezoelectric substrate, an interdigital transducer and a micro-cavity, the micro-cavity is bonded on the piezoelectric substrate, the micro-cavity comprises a main cavity channel, two ends of the main cavity channel are respectively provided with at least one sample input port and at least one sample output port, and the main cavity channel is connected with the interdigital transducer. The interdigital transducers are arranged on the piezoelectric substrate, located on the two sides of the main cavity channel respectively and arranged in the direction perpendicular to the flowing direction of a sample in the main cavity channel, the microcavity further comprises side cavity channels distributed on the two sides of the main cavity channel, filling liquid injection ports are formed in the side cavity channels, filling liquid is a liquid photocurable material, and the filling liquid injection ports are communicated with the main cavity channel. Meanwhile, the invention further discloses a design, manufacturing and application method of the chip, and the two-stage functions of pre-focusing and concentration can be effectively achieved under the sheath flow-free condition.