652 results about "Piezoelectric substrate" patented technology

An acoustic wave device includes an IDT electrode and reflector electrodes on or above a piezoelectric substrate. A region in which first and second electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction defines an intersection region. The intersection region includes a center region and first and second edge regions on both sides of the center region. Dielectric films extend from the first and second edge regions to outer side regions in the acoustic wave propagation direction of the reflector electrodes via the reflector electrodes.

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

The invention discloses a composite piezoelectric substrate and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The preparation method of the composite piezoelectric substrate comprises the following steps: acquiring a piezoelectric wafer and a substrate wafer; depositing a first bonding layer on the first surface of the piezoelectric wafer, and depositing a second bonding layer on the to-be-bonded surface of the substrate wafer; ion implantation is carried out inwards in the first surface direction of the piezoelectric wafer, and an ion implantation damage layer is formed in the piezoelectric wafer; bonding the first bonding layer of the piezoelectric wafer and the second bonding layer of the substrate wafer to obtain a bonding body; performing annealing stripping treatment on the bonding body to separate the bonding body along the ion implantation damage layer to obtain the composite piezoelectric substrate; the composite piezoelectric substrate sequentially comprises a substrate wafer, a second bonding layer, a first bonding layer and a piezoelectric single crystal film from bottom to top. According to the method, the bonding strength and the yield are remarkably improved.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a material having a lower acoustic velocity and higher permittivity than silicon oxide.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second electrode fingers with a circular arc or an elliptical arc shape. When a virtual line connecting tip ends of the second electrode fingers is a first envelope, a virtual line connecting tip ends of the first electrode fingers is a second envelope, and a center of a circle including the circular arc or a midpoint of focal points of an ellipse including the elliptical arc of the first and second electrode fingers is a fixed point, a straight line connecting the fixed point and the tip end of the second electrode finger is not parallel to the first envelope, and a straight line connecting the fixed point and the tip end of the first electrode finger is not parallel to the second envelope.

Aspects and embodiments disclosed herein include a surface acoustic wave device comprising a quartz substrate, a layer of a first lithium-based piezoelectric material disposed on an upper surface of the quartz substrate, a layer of a second lithium-based piezoelectric material formed of a material different from the first lithium-based piezoelectric material disposed on an upper surface of the layer of the first lithium-based piezoelectric material, and interdigital transducer electrodes disposed on an upper surface of the layer of the second lithium-based piezoelectric material.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers. Virtual lines connecting tips of distal end portions of the first and second fingers are respectively referred to as first and second envelopes. An overlap region is between the first and second envelopes and includes at least one curved-line region, in which the first and second electrode fingers have a curved plan-view shape. In the curved-line region, each of the first and second electrode fingers has a non-constant curvature.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion, a second portion between the center region and the first portion, and a third portion between the center region and the second portion. The first portion and the third portion have liner densities greater than liner densities of the second portion and the finger in the center region.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

An acoustic wave device includes a pair of comb-shaped electrodes provided on a piezoelectric substrate, each of the pair of comb-shaped electrodes including electrode fingers and metal portions that are provided between electrode fingers adjacent to each other, the metal portions having a shorter length than the electrode fingers, the electrode fingers of one comb-shaped electrode and the electrode fingers of the other comb-shaped electrode being alternately arranged at least in a part, an acoustic velocity of an acoustic wave propagating through a region where the metal portions are located being higher than an acoustic velocity of an acoustic wave propagating through a central region of an overlap region where the electrode fingers of the one comb-shaped electrode and the electrode fingers of the other comb-shaped electrode overlap, and being equal to or less than 1.10 times the acoustic velocity of the acoustic wave propagating through the central region.

An acoustic wave device includes a piezoelectric substrate, a transducer, and a depression. The transducer is disposed on a surface of the piezoelectric substrate, and includes a first bus bar, a first electrode, a second bus bar, and a second electrode. The first bus bar and the second bus bar extend along a second direction. The first electrode has a first end and extends from the first bus bar along a first direction. The first electrode and the second electrode are spaced apart from each other, and a gap is formed between the first end of the first electrode and an edge of the second bus bar. The depression is formed in the piezoelectric substrate and is depressed from the surface of the piezoelectric substrate. The first end of the first electrode is continuously joined to a sidewall of the depression along a depth direction.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The piezoelectric layer has a trench in the border region. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The second width is narrower than the first width and the third width.

A multiplexer includes first and second filters, a resin layer, and an electrically conductive layer. A pass band of the first filter is different from a pass band of the second filter. The first filter is in contact with an electrically conductive layer, and the second filter is not in contact with the electrically conductive layer. The second filter has a greater thermal resistance value than the first filter, and lowers the pass band in response to a temperature rise. A region of the piezoelectric substrate closer to the first filter is a first region, and a region of the piezoelectric substrate farther from the first filter is a second region. Areas in the first and second regions where an acoustic wave resonator included in a parallel-arm circuit is provided are first and second areas. The second area is greater than the first area.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second busbars facing each other, first electrode fingers each of which includes one end connected to the first busbar, and second electrode fingers each of which includes one end connected to the second busbar. The first and second electrode fingers are interdigitated with each other. A portion where the first and second electrode fingers overlap in an acoustic wave propagation direction is an intersecting region. A shape of the first and second electrode fingers in plan view includes a curved portion. In the intersecting region, resonant frequencies or anti-resonant frequencies are the same or substantially the same.

A method for fabricating a sensor device that includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigitated transducer (IDT) formed on a substrate having at least a layer of a piezoelectric material. The SAW sensor includes either one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna, a matching circuit and a waveguide are formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

An acoustic wave device includes a piezoelectric substrate that includes a support including a support substrate and a piezoelectric film including a piezoelectric layer on the support, and an IDT electrode, on the piezoelectric layer, that includes first and second busbars facing each other, and first and second electrode fingers. An acoustic reflection portion is located where the support overlaps the IDT electrode in plan view. When a thickness of the piezoelectric film is d and a center-to-center distance between the first and second electrode fingers adjacent to each other is p, d / p is about 0.5 or less. An overlap region is where the first and second electrode fingers adjacent to each other overlap in an electrode finger orthogonal direction and includes a middle region, and first and second edge regions on both sides of the middle region in an electrode finger extension direction.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer and a functional electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer includes at least a first region and a second region with crystal orientations different from each other. The functional electrode overlaps the first region and the second region in plan view.

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The invention provides a preparation and test method of a magnetoacoustic isolator based on horizontal shearing surface acoustic waves, which relates to the field of surface acoustic wave devices, and comprises the following steps: determining the type and tangential direction of a piezoelectric substrate and the propagation angle of the surface acoustic waves according to the type of the surface acoustic waves so as to determine the wave velocity of the surface acoustic waves; the design of a surface acoustic wave delay line is completed based on the wave velocity of the surface acoustic wave, and the type of the surface acoustic wave at least comprises a horizontal shear surface acoustic wave; manufacturing the designed surface acoustic wave delay line on the determined piezoelectric substrate; and integrating a magnetic element on the determined piezoelectric substrate to obtain the magnetoacoustic isolator. The invention realizes the preparation of the spin wave magnetoacoustic isolator capable of stably exciting the horizontal shear surface acoustic wave.

An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. A layer of positive temperature coefficient of frequency dielectric material is disposed over one or more of the first plurality of acoustic wave resonators to control the temperature coefficient of frequency and improve temperature stability of the acoustic wave filter.

The invention provides a resonator with a transverse mode suppression structure and a manufacturing method thereof.The resonator comprises a piezoelectric substrate, an electrode layer, a passivation layer and a suppression layer, the electrode layer, the passivation layer and the suppression layer are located on the piezoelectric substrate, the electrode layer comprises two interdigital electrodes oppositely arranged in the first direction, and each interdigital electrode comprises a bus bar and a plurality of electrode fingers; gaps are formed between the electrode fingers in different interdigital electrodes and the bus bars, and the passivation layer is embedded between the two interdigital electrodes in the first direction and covers the electrode fingers and the gaps; the suppression layer comprises two suppression units which are oppositely arranged in the first direction, and each suppression unit is connected with one bus bar to cover the gap and partially overlaps with at least one electrode finger located on the different side. According to the resonator, the suppression of a transverse mode is realized through the additionally arranged suppression layer structure, meanwhile, the quality factor is improved, the resonator can be suitable for various resonator structures and a wide frequency range, the durability and the linearity of the resonator are improved, the working stability of the resonator is further improved, and the service life of the resonator is further prolonged.

The invention relates to the field of electronic component preparation processes, in particular to a high-performance temperature compensation surface acoustic wave filter and a manufacturing method thereof. An interdigital transducer, wherein the interdigital transducer is located at one side of the piezoelectric substrate; the transition layer is located on the side, away from the piezoelectric substrate, of the interdigital transducer, and the transition layer covers the interdigital transducer and prevents metal elements of the interdigital transducer from diffusing outwards; the functional layer is located on the side, away from the interdigital transducer, of the transition layer, the functional layer covers an active area of a metal finger strip of the interdigital transducer to form a high-sound-velocity area, the end, away from the active area, of the metal finger strip of the interdigital transducer forms a low-sound-velocity area, and a sound velocity difference is formed between the high-sound-velocity area and the low-sound-velocity area; therefore, transverse mode clutters are suppressed; the temperature compensation layer is located on the side, away from the transition layer, of the functional layer, and the temperature compensation layer covers the functional layer and the piezoelectric substrate; lateral mode clutters in TC-SAW are suppressed, and metal diffusion is suppressed at the same time.

An acoustic wave device has a substrate, an optional functional layer disposed over at least a portion of the substrate, a piezoelectric layer disposed over at least a portion of the functional layer and / or substrate, and an interdigital transducer electrode disposed on the piezoelectric layer. The piezoelectric layer has an outer edge spaced inward of an outer edge of the substrate, the outer edge of the piezoelectric layer being tapered at an angle relative to a surface of the substrate to thereby reduce an acoustic reflection magnitude at said outer edge of the piezoelectric layer.

A high frequency module includes a mounting substrate, an acoustic wave filter, a protection member, a resin layer, and a shield layer. The acoustic wave filter is mounted on a first main surface of the mounting substrate. The protection member is disposed on a main surface of the acoustic wave filter that is far from the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers an outer peripheral surface of the acoustic wave filter and an outer peripheral surface of the protection member. The shield layer covers the resin layer and the protection member. The protection member is in contact with both the acoustic wave filter and the shield layer. The acoustic wave filter includes a piezoelectric substrate. A main surface of the piezoelectric substrate that is far from the mounting substrate is in contact with the protection member.

A surface acoustic wave resonator device and manufacturing method thereof, the surface acoustic wave resonator device has an interdigital electrode region including a first peripheral region, a first end region, a central region, a second end region and a second peripheral region, and includes: an interdigital transducer, disposed on a piezoelectric substrate and including interdigital electrodes located in the interdigital electrode region; an intermediate layer, disposed on the piezoelectric substrate and covering the interdigital transducer; an acoustic velocity adjusting layer, disposed on a side of at least a portion of the intermediate layer away from the piezoelectric substrate; and a passivation layer, disposed on a side of the intermediate layer away from the piezoelectric substrate, wherein the acoustic velocity adjusting layer is located in the central region, overlaps with portions of the interdigital electrodes located in the central region in a direction perpendicular to the piezoelectric substrate.

An acoustic wave element includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a reflector. The IDT electrode includes plural electrode fingers, and the reflector includes plural reflector electrode fingers. In a case where IRGAP is an IDT-reflector gap that is a distance between a center of the electrode finger located closest to the reflector and a center of the reflector electrode finger located closest to the IDT electrode, and λREF is a reflector wave length that is twice a repetition pitch of the reflector electrode fingers, a ratio of about 0.25≤IRGAP / λREF≤about 0.44 is satisfied, and the reflector wave length is longer than an IDT wave length that is a repetition pitch of the electrode fingers.

A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

To provide a coating robot which suppresses decrease in a coating film thickness and can achieve improvement in coating quality.SOLUTION: A head control part 90 of a coating robot 10 performs recovery control for controlling drive of a piezoelectric substrate 62 so that when it is determined that a specific nozzle 54 is a defective nozzle 54a that is defective in discharge of droplets, a size of droplets of good dot D2 around defective dot D1 increases. In the recovery control, when the good dot D2 around the defective dot D1 reaches a boundary of a coating range in a coating part, boundary discharge such that the size of droplets of the good dot D2 becomes equal to a droplet size in a usual discharge state when the recovery control is performed is executed.SELECTED DRAWING: Figure 2