844 results about "Piezoelectric substrate" patented technology

An acoustic wave device includes acoustic wave resonators each including a piezoelectric substrate including a piezoelectric body layer, and an IDT electrode on the piezoelectric substrate and including electrode fingers. At least one of the acoustic wave resonators is an excitation angle change resonator, in which, the piezoelectric body layer includes a propagation axis and the electrode fingers are curved. In the excitation angle change resonator, an excitation direction of an acoustic wave in a portion of one of the electrode fingers is one of first, second, or third directions. An excitation angle of the excitation angle change resonator is not uniform in the IDT electrode.

Dispersive delay lines are disclosed. The dispersive delay line can include a piezoelectric substrate having a first interdigital transducer electrode on a first region of the piezoelectric substrate and a second interdigital transducer electrode on a second region of the piezoelectric substrate. The dispersive delay line is arranged such that an acoustic wave is configured to propagate from the first interdigital transducer electrode to the second interdigital transducer electrode though a third region of the piezoelectric substrate. An additional material positioned on the third region of the piezoelectric substrate can impact acoustic wave propagation velocity. Related radio frequency modules, wireless communications devices, and methods are disclosed.

An acoustic wave device includes an IDT electrode and reflector electrodes on or above a piezoelectric substrate. A region in which first and second electrode fingers of the IDT electrode overlap each other in an acoustic wave propagation direction defines an intersection region. The intersection region includes a center region and first and second edge regions on both sides of the center region. Dielectric films extend from the first and second edge regions to outer side regions in the acoustic wave propagation direction of the reflector electrodes via the reflector electrodes.

To provide a painting robot capable of reducing the effects of pressure fluctuations and ensuring a pressure range in which a pneumatic control valve can operate.SOLUTION: A painting robot 10 comprises: a painting head unit 50 including a plurality of nozzles 54 which eject droplets, and a painting head 53 having a piezoelectric substrate 62 for ejecting the droplets from the nozzles 54; a robot arm R1 for moving the painting head unit 50 to a desired position; and a paint supply mechanism 70 provided spanning the robot arm R1 and the painting head unit 50. Further, the paint supply mechanism 70 includes: a paint supply channel 72 for supplying a paint toward the painting head 53; a return flow channel 73 for recovering the paint that was not discharged from the nozzles 54; an air-operated paint regulator (AOPR) 92 provided in the paint supply channel 72 and capable of adjusting a valve opening degree in response to a controlled air pressure; and an orifice 96 provided on the downstream side of the paint supply channel 72 which is closer to the painting head side 53 than the AOPR 92.SELECTED DRAWING: Figure 7

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

The invention belongs to the technical field of electromagnetic protection, and relates to an electromagnetic protection device based on mechanical wave nonlinear attenuation, which comprises a piezoelectric substrate, and a signal input component, a nonlinear attenuation component and a signal output component which are sequentially arranged on the piezoelectric substrate at intervals, the nonlinear attenuation component comprises an energy absorption structure, a deformation structure and a rigid connection structure. The energy absorption structures are made of energy absorption materials and are arranged above the piezoelectric substrate at intervals; the deformation structure is made of a mechanical metamaterial, and two ends of the deformation structure are respectively connected with the energy absorption structure and the piezoelectric substrate; one end of the rigid connection structure is connected with the energy absorption structure, and the other end is spaced from or abutted against the piezoelectric substrate; the signal input component converts electromagnetic wave signals into mechanical waves, the nonlinear attenuation component deforms under propagation of the mechanical waves, the deformation quantity is in direct proportion to the strength of the mechanical waves, and the signal output component converts the mechanical waves into the electromagnetic wave signals and outputs the electromagnetic wave signals. According to the invention, electromagnetic protection can be realized based on mechanical wave nonlinear attenuation.

The invention discloses a composite piezoelectric substrate and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The preparation method of the composite piezoelectric substrate comprises the following steps: acquiring a piezoelectric wafer and a substrate wafer; depositing a first bonding layer on the first surface of the piezoelectric wafer, and depositing a second bonding layer on the to-be-bonded surface of the substrate wafer; ion implantation is carried out inwards in the first surface direction of the piezoelectric wafer, and an ion implantation damage layer is formed in the piezoelectric wafer; bonding the first bonding layer of the piezoelectric wafer and the second bonding layer of the substrate wafer to obtain a bonding body; performing annealing stripping treatment on the bonding body to separate the bonding body along the ion implantation damage layer to obtain the composite piezoelectric substrate; the composite piezoelectric substrate sequentially comprises a substrate wafer, a second bonding layer, a first bonding layer and a piezoelectric single crystal film from bottom to top. According to the method, the bonding strength and the yield are remarkably improved.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a material having a lower acoustic velocity and higher permittivity than silicon oxide.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second electrode fingers with a circular arc or an elliptical arc shape. When a virtual line connecting tip ends of the second electrode fingers is a first envelope, a virtual line connecting tip ends of the first electrode fingers is a second envelope, and a center of a circle including the circular arc or a midpoint of focal points of an ellipse including the elliptical arc of the first and second electrode fingers is a fixed point, a straight line connecting the fixed point and the tip end of the second electrode finger is not parallel to the first envelope, and a straight line connecting the fixed point and the tip end of the first electrode finger is not parallel to the second envelope.

A dual mode surface acoustic wave (SAW) filter includes a piezoelectric substrate, a pair of reflectors disposed on the piezoelectric substrate, and N input and output interdigital transducers (IDTs) disposed on the piezoelectric substrate and between the pair of reflectors and alternately arranged in a lateral direction. Each IDT includes a pair of comb electrodes with a plurality of electrode fingers, adjacent electrode fingers pointing in opposite directions. The total number of electrode fingers in each IDT is an odd number greater than or equal to 3. The invention also discloses a receiving filter and a duplexer.

The invention relates to the technical field of resonators, in particular to a surface acoustic wave device, a radio frequency front-end module and electronic equipment, the surface acoustic wave device comprises a piezoelectric substrate, and the piezoelectric substrate comprises a dielectric layer and a piezoelectric layer arranged on one side of the dielectric layer; the IDT electrode is arranged on one side, far away from the dielectric layer, of the piezoelectric layer; by selecting the proper dielectric layer and piezoelectric layer, the ratio of the speed of the body wave propagating in the dielectric layer to the speed of the body wave propagating in the piezoelectric layer is less than 0.95, and the body wave is easier to transmit to the lower part of the piezoelectric layer, so that the formation of a high-order mode is inhibited to a certain extent, the adverse effect of the high-order mode on the propagation of the surface acoustic wave is favorably reduced, and the transmission efficiency of the surface acoustic wave is improved. And the performance of the surface acoustic wave device can be improved.

Aspects and embodiments disclosed herein include a surface acoustic wave device comprising a quartz substrate, a layer of a first lithium-based piezoelectric material disposed on an upper surface of the quartz substrate, a layer of a second lithium-based piezoelectric material formed of a material different from the first lithium-based piezoelectric material disposed on an upper surface of the layer of the first lithium-based piezoelectric material, and interdigital transducer electrodes disposed on an upper surface of the layer of the second lithium-based piezoelectric material.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers. Virtual lines connecting tips of distal end portions of the first and second fingers are respectively referred to as first and second envelopes. An overlap region is between the first and second envelopes and includes at least one curved-line region, in which the first and second electrode fingers have a curved plan-view shape. In the curved-line region, each of the first and second electrode fingers has a non-constant curvature.

An acoustic wave filter includes a divided resonator group and series arm resonators in a path connecting an input-output terminal and an input-output terminal to each other and parallel arm resonators each between a node in the path described above and the ground. The divided resonator group, the series arm resonators, and the parallel arm resonators each include an acoustic wave resonator including an interdigital transducer electrode on a piezoelectric substrate. The divided resonator group includes divided resonators coupled in series with each other. The IDT electrode included in the divided resonator includes a first withdrawal electrode. The IDT electrode included in the divided resonator includes a second withdrawal electrode different from the first withdrawal electrode with respect to the electrode finger structure.

The invention discloses a resonator, a filter and a radio frequency front end module, the resonator comprises a piezoelectric substrate, an interdigital transducer and a first dielectric layer, and the interdigital transducer is arranged on the piezoelectric substrate; the first dielectric layer at least covers a partial region of the interdigital transducer; the interdigital transducer comprises two bus bars and a plurality of electrode fingers connected to the two bus bars respectively, an active area and gap areas located at the two ends of the active area in the first direction are formed between the two bus bars, and the first direction intersects with the second direction; the first dielectric layer is provided with a strip-shaped groove, the groove is filled with a high-sound-velocity material to form a dielectric strip, the extension direction of the dielectric strip intersects with the second direction, the dielectric strip and the electrode fingers are arranged in a staggered mode in the second direction, the active area at least comprises a central area, and the projection of the dielectric strip in the second direction at least covers the projection of the central area in the second direction. And the dispersion curve is adjusted to be smoother, so that the suppression of the transverse mode is realized.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion, a second portion between the center region and the first portion, and a third portion between the center region and the second portion. The first portion and the third portion have liner densities greater than liner densities of the second portion and the finger in the center region.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

An acoustic wave device includes a pair of comb-shaped electrodes provided on a piezoelectric substrate, each of the pair of comb-shaped electrodes including electrode fingers and metal portions that are provided between electrode fingers adjacent to each other, the metal portions having a shorter length than the electrode fingers, the electrode fingers of one comb-shaped electrode and the electrode fingers of the other comb-shaped electrode being alternately arranged at least in a part, an acoustic velocity of an acoustic wave propagating through a region where the metal portions are located being higher than an acoustic velocity of an acoustic wave propagating through a central region of an overlap region where the electrode fingers of the one comb-shaped electrode and the electrode fingers of the other comb-shaped electrode overlap, and being equal to or less than 1.10 times the acoustic velocity of the acoustic wave propagating through the central region.

The invention relates to the technical field of semiconductor material processing, in particular to a preparation method of a piezoelectric composite substrate, which comprises the following steps: preparing two piezoelectric substrates and a support substrate; wherein one piezoelectric substrate is used as a donor substrate, and the other piezoelectric substrate is used as an auxiliary substrate; ion implantation is carried out in the donor substrate, a weakening layer is formed in the donor substrate, and the donor material layer side of the donor substrate and the auxiliary substrate are temporarily bonded through the connecting layer to form a first bonding body; stress is applied to the weakening layer, so that the weakening layer is broken, and a first composite substrate and a residual donor substrate are formed; bonding the donor material layer side of the first composite substrate with the support substrate to form a second bonding body; and corroding to remove a connecting layer of a temporary bonding interface of the donor material layer and the auxiliary substrate in the second bonding body, so that the auxiliary substrate is separated from the second bonding body, and the piezoelectric composite substrate is formed. According to the method, the piezoelectric substrate does not need to be greatly thinned, the single piezoelectric substrate can be reused, and the production cost is reduced.

An acoustic wave device includes a piezoelectric substrate, a transducer, and a depression. The transducer is disposed on a surface of the piezoelectric substrate, and includes a first bus bar, a first electrode, a second bus bar, and a second electrode. The first bus bar and the second bus bar extend along a second direction. The first electrode has a first end and extends from the first bus bar along a first direction. The first electrode and the second electrode are spaced apart from each other, and a gap is formed between the first end of the first electrode and an edge of the second bus bar. The depression is formed in the piezoelectric substrate and is depressed from the surface of the piezoelectric substrate. The first end of the first electrode is continuously joined to a sidewall of the depression along a depth direction.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The piezoelectric layer has a trench in the border region. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The second width is narrower than the first width and the third width.

An acoustic wave device includes a piezoelectric substrate including first and second main surfaces, a mounting substrate including third and fourth main surfaces, a functional electrode on the first main surface to perform electromechanical conversion with the piezoelectric substrate, first and second plane electrodes on the first main surface and connected to the functional electrode, and a third plane electrode on the first main surface and in contact with an end side of the piezoelectric substrate, and not connected to the functional electrode and the plane electrode, and bump electrodes bonded to the first and third main surfaces. A maximum distance D13max between two end portions of the third plane electrode is smaller than a minimum distance D1min of distances between two of the first and second plane electrodes having different potentials from each other.

A multiplexer includes first and second filters, a resin layer, and an electrically conductive layer. A pass band of the first filter is different from a pass band of the second filter. The first filter is in contact with an electrically conductive layer, and the second filter is not in contact with the electrically conductive layer. The second filter has a greater thermal resistance value than the first filter, and lowers the pass band in response to a temperature rise. A region of the piezoelectric substrate closer to the first filter is a first region, and a region of the piezoelectric substrate farther from the first filter is a second region. Areas in the first and second regions where an acoustic wave resonator included in a parallel-arm circuit is provided are first and second areas. The second area is greater than the first area.

Provided is an elastic wave device capable of suppressing ripples near a resonance frequency. The elastic wave device (1) comprises a piezoelectric substrate (2) and an IDT electrode (7) disposed on the piezoelectric substrate (2). The piezoelectric substrate (2) comprises a high acoustic velocity layer and a piezoelectric layer (6). The IDT electrode (7) comprises first and second bus bars (14, 15) and a plurality of first and second electrode fingers (16, 17) alternately inserted into each other. First and second envelopes (A1, A2) which are imaginary lines formed by connecting the respective front ends of the plurality of first and second electrode fingers (16, 17) extend obliquely relative to the propagation direction of the elastic wave. A first dielectric film (9a, 9b) is disposed in at least one of a plurality of first gaps (G1) between the plurality of first electrode fingers (16) and the second bus bar (15) and a plurality of second gaps (G2) between the plurality of second electrode fingers (17) and the first bus bar (14), and the density of the first dielectric film (9a, 9b) is higher than that of silicon oxide.

An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second busbars facing each other, first electrode fingers each of which includes one end connected to the first busbar, and second electrode fingers each of which includes one end connected to the second busbar. The first and second electrode fingers are interdigitated with each other. A portion where the first and second electrode fingers overlap in an acoustic wave propagation direction is an intersecting region. A shape of the first and second electrode fingers in plan view includes a curved portion. In the intersecting region, resonant frequencies or anti-resonant frequencies are the same or substantially the same.

The invention discloses a mid-infrared light detector and a preparation method thereof, and belongs to the technical field of light detection.The light detector comprises a piezoelectric substrate, and a Van der Waals heterojunction, an input interdigital transducer and an output interdigital transducer are arranged on the piezoelectric substrate; the input interdigital transducer and the output interdigital transducer are symmetrically arranged on two sides of the Van der Waals heterojunction; the input interdigital transducer is used for generating a surface acoustic wave according to the alternating current signal; and the output interdigital transducer is used for receiving the surface acoustic wave signal passing through the Van der Waals heterojunction and outputting the signal. According to the device, a periodic strain field and a piezoelectric field are formed on the surface of a substrate through surface acoustic waves, graphene plasmons are excited, mid-infrared light absorption is enhanced, photo-generated electron-hole space separation is promoted, photo-generated carrier recombination is inhibited, a photoelectric response signal is converted into an acoustoelectric signal, and the photoelectric response signal is converted into an acousto-electric signal. And high-performance mid-infrared light detection is realized by using the high-sensitivity response characteristic of the surface acoustic wave device to acoustoelectric interaction.

A method for fabricating a sensor device that includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigitated transducer (IDT) formed on a substrate having at least a layer of a piezoelectric material. The SAW sensor includes either one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna, a matching circuit and a waveguide are formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

A painting robot is provided with painting head unit that has a plurality of nozzles to eject droplets and painting head that is provided with piezoelectric substrate to eject the droplets from nozzles, robot arm to move said painting head unit to a desired position, and paint supply mechanism that may be installed between robot arm and painting head unit. Also, paint supply mechanism is provided with paint supply channel to provide paint towards painting head, return flow channel to recover paint that was not discharged from nozzle, an air-operated paint regulator that has been installed in paint supply channel for which the valve opening position can be adjusted in response to the controlled air pressure, and orifice that has been installed on the downstream side of paint supply channel facing painting head side.

An acoustic wave device includes a piezoelectric substrate that includes a support including a support substrate and a piezoelectric film including a piezoelectric layer on the support, and an IDT electrode, on the piezoelectric layer, that includes first and second busbars facing each other, and first and second electrode fingers. An acoustic reflection portion is located where the support overlaps the IDT electrode in plan view. When a thickness of the piezoelectric film is d and a center-to-center distance between the first and second electrode fingers adjacent to each other is p, d / p is about 0.5 or less. An overlap region is where the first and second electrode fingers adjacent to each other overlap in an electrode finger orthogonal direction and includes a middle region, and first and second edge regions on both sides of the middle region in an electrode finger extension direction.