280 results about "Bulk acoustic wave" patented technology

Aspects of this disclosure relate to a bulk acoustic wave resonator and an integrated capacitor. In certain embodiments, the integrated capacitor can be a metal-insulator-metal capacitor in parallel with the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include a portion of a first electrode and a portion of a second electrode of the bulk acoustic wave resonator. At least part of the metal-insulator-metal capacitor is positioned laterally relative to an acoustic reflector of the bulk acoustic wave resonator. Other embodiments of capacitors integrated with a bulk acoustic wave resonator are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

The invention discloses a three-dimensional temperature field online reconstruction system based on receiving and transmitting integrated sound wave sensing, and relates to the field of boiler monitoring. Comprising an information acquisition module, an emission control module, a reconstruction sensing module, a path optimization module, a sound wave receiving module, an amplitude limiting filtering module, a decoding separation module, a feature extraction module, a physical simulation module, a multi-source fusion module, a three-dimensional reconstruction module, a state monitoring module and an online calibration module. According to the method, the transmitted signal can still keep high identifiability in a high-noise and strong-interference background, the credibility of subsequent inversion and data assimilation is improved, a sensing network can be self-optimized, the observation precision and the space coverage capability are improved, a wide dynamic range and high linearity are realized, a simulation result is closer to a real working condition, and the method is suitable for large-scale popularization and application. And the reliability of temperature field inversion is obviously improved.

The present disclosure relates to a bulk acoustic wave (BAW) device with electrostatic discharge (ESD) protection. The disclosed BAW device includes a substrate (106), an ESD protection layer (106) over the substrate (106), a first bottom reflector (109-1) over the ESD protection layer (108), a first bottom electrode (112-1) over the first bottom reflector (109-1), a first top electrode (118-1) vertically aligned with the first bottom electrode (112-1), and a piezoelectric layer (116C) vertically between the first bottom electrode (112-1) and the first top electrode (118-1). Herein, the ESD protection layer (108) is electrically insulating and eligible to achieve at least a 400 V breakdown voltage with a 200 nm thickness. The first bottom reflector (109-1) includes a stack of alternating high acoustic impedance conductive layers (120A-E) and low acoustic impedance conductive layers (120A-E). The first bottom electrode (112-1) is electrically connected to the first bottom reflector (109-1). A breakdown voltage of the piezoelectric layer (116C) is no more than the breakdown voltage of the ESD protection layer (108).

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

According to the cavity type bulk acoustic wave resonator with the stepped cavity and the preparation method of the cavity type bulk acoustic wave resonator, the stepped cavity is adopted to buffer and reduce the pressure of the upper layer structure, the structural strength and stability are higher, the cavity is not prone to collapse during release, meanwhile, the edge stress is buffered and reduced, the material stripping risk is reduced, and the yield is increased. And the structure of the invention enhances edge heat dissipation, and is beneficial to improving the power capacity. The ScAlN thin film with good performance can be obtained by adopting the magnetron sputtering ScAlN as the piezoelectric layer and using Ti / Bt / AlN as the seed layer for growth, and the stability, the reliability and the comprehensive performance of the device are improved. The passivation layer is prepared on the surface of the device, so that mechanical damage of a subsequent process to a sensitive structure can be effectively prevented, sound wave energy can be limited in a piezoelectric oscillation region, and transverse leakage and energy loss are reduced; and the electric coupling between the FBAR and the substrate can be reduced, the radio frequency loss is reduced, and the Q value of the device is improved.

The invention is applicable to the technical field of grouting of mining engineering and geotechnical engineering, and provides a grouting diffusion space real-time sensing and tracking method based on slurry dynamic sound source localization, which comprises the following steps: active enhancement and characteristic modulation of a slurry dynamic sound source; building a stereo wave sensing network and acquiring high-fidelity sound wave data; carrying out AI-driven slurry sound source identification and three-dimensional space positioning; and the grouting diffusion process is subjected to three-dimensional real-time visualization and intelligent early warning. The invention creatively provides a comprehensive solution integrating sound source active enhancement modulation, stereophonic sensing network, artificial intelligence deep noise reduction and three-dimensional space inversion positioning, and the core of the comprehensive solution lies in that slurry flow sound signals which are originally weak and difficult to use are actively enhanced and are endowed with features; a traceable slurry power sound source signal with a high signal-to-noise ratio is constructed, and three-dimensional space real-time sensing and visual tracking of the slurry diffusion frontal surface position and the overall diffusion range are realized in combination with an advanced signal processing and positioning algorithm.

The invention relates to the technical field of microelectronics and MEMS manufacturing, in particular to a bulk acoustic resonator with a double-layer piezoelectric film and a preparation method thereof, according to the method, a heterogeneous integrated key structure is formed by a first piezoelectric layer and a second piezoelectric layer which are deposited on the two sides of a middle electrode layer respectively, the physical and process limits of a single-layer piezoelectric film FBAR are broken through, the high-frequency band is improved, and the high-frequency band is improved. A wider bandwidth is realized; middle electrode layer tuning is combined with back silicon through hole leading-out, front routing inductance is eliminated, and the low-loss characteristic of the filter under high frequency is guaranteed; the self-heating problem under large bandwidth and high power is effectively inhibited through heat dissipation integrated packaging, and the power bearing capacity is improved; the method is compatible with a CMOS (complementary metal oxide semiconductor) process and can be directly embedded into an existing production line, so that the volume is further reduced while the bulk acoustic wave resonator with the double-layer piezoelectric film can effectively cover a frequency band of more than 3GHz, and the problem that a single-layer piezoelectric film and a matched process thereof cannot meet the requirements of a next-generation radio frequency front end on high frequency, large bandwidth, high power and wafer-level packaging is solved.

A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second electrode. A polarization of a crystal structure of the second piezoelectric layer is opposite to a polarization of a crystal structure of the first piezoelectric layer to achieve higher order resonant frequencies in the BAW device by means other than merely thinning layers in the layer stack. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured to be a third electrode. In some examples, the BAW device includes at least one intermediate layer between the first and second piezoelectric layers, and a total combined thickness of the at least one intermediate layer is less than 4% of a total thickness of the layer stack.

The invention discloses an unmanned aerial vehicle precipitation enhancement system and method based on compressed gas sound wave driving, and relates to the technical field of artificial precipitation enhancement, and the method comprises the steps that an unmanned aerial vehicle aircraft provides flight support needed by system high-altitude operation, and supports fixed-height cruise and dual-mode positioning; the high-pressure gas supply module stores compressed gas and provides a continuous and controllable energy source for sound wave generation; the sound wave generation module converts the air pressure energy into sound energy and generates directional low-frequency sound waves, and the directional low-frequency sound waves act on a target cloud area to achieve precipitation enhancement catalysis; the control module is used for unmanned aerial vehicle flight state regulation and control, gas path on-off and pressure adjustment, sound wave frequency closed-loop control, receiving feedback data of all the modules and dynamically adjusting operation parameters through an algorithm. The damping suspension module absorbs counter-acting force generated when sound waves are generated, and interference on the flight attitude of the unmanned aerial vehicle is counteracted. Based on the design, light-weight, low-power-consumption, pollution-free and efficient artificial rainfall enhancement operation can be realized.

The application discloses a manufacturing method of a resonant filter. The method comprises the following steps: manufacturing a first substrate and a resonant filter structure, wherein the resonant filter structure is formed on a first side of the first substrate, the resonant filter structure comprises a bulk acoustic wave resonant structure and a Lamb wave resonant structure, the bulk acoustic wave resonant structure and the Lamb wave resonant structure are electrically connected, the bulk acoustic wave resonant structure comprises a first electrode structure, the Lamb wave resonant structure comprises a second electrode structure, the second electrode structure comprises a first interdigital electrode and a second interdigital electrode, the first electrode structure and the second electrode structure share a same first electrode layer, the first interdigital electrode is electrically connected with the outside, and the second interdigital electrode is electrically connected with the first electrode structure.

Aspects and embodiments include a bulk acoustic wave resonator comprising a layer of piezoelectric material, an upper electrode disposed on top of the layer of piezoelectric material, the upper electrode including a metallic Bragg mirror having alternating layers of a first metal and a second metal, and a lower electrode disposed on a bottom of the layer of piezoelectric material, the lower electrode including a metallic Bragg mirror having alternating layers of a third metal and a fourth metal.

The present invention relates to the technical field of communications, and provides a bulk acoustic resonator, a bulk acoustic wave filter, and an electronic device. The bulk acoustic resonator of the present invention comprises: a substrate, and a first electrode, a piezoelectric layer and a second electrode which are sequentially arranged on the substrate; the bulk acoustic resonator is divided into a working area, a transition area surrounding the working area, and a peripheral area surrounding the transition area; the bulk acoustic resonator comprises a first air gap and a second air gap which are located in the transition area; in a direction perpendicular to the substrate, the first air gap at least extends through part of the thickness of the piezoelectric layer; the second electrode comprises a first main body portion located in the working area, and an edge portion located in the transition area and connected to the first main body portion; the first main body portion is in contact with the piezoelectric layer; there is a certain gap between the edge portion and the piezoelectric layer, so as to form the second air gap; and the orthographic projection of the second air gap on a layer where the substrate is located covers the orthographic projection of the first air gap on the layer where the substrate is located.

The invention relates to the technical field of bulk acoustic wave resonators, and particularly provides a bulk acoustic wave resonator and a preparation method thereof.The resonator comprises a first substrate, a coating type structure film layer, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially connected from bottom to top, an acoustic reflector is arranged on the coating type structure film layer, a temperature compensation layer is arranged in the bottom electrode, and the piezoelectric layer is arranged on the top electrode; the temperature coefficients of the bottom electrode, the piezoelectric layer and the top electrode are all opposite to the temperature coefficient of the temperature compensation layer; the resonator can effectively restrain resonant frequency drift generated by the bottom electrode, the piezoelectric layer and the top electrode.

A laminated ScxAl1-xN BAW resonator with complementary-switchable operation in thickness extensional modes (TEl and TEN). The resonator comprises ferroelectric ScxAl1-xN layers alternatively stacked with metal electrodes, enabling independent polarization switching of each piezoelectric layer. Opting for unanimous or alternative poling of the ScxAl1-xN layers, the resonator can be switched to operate in two complementary states with either TEl or TEN active resonance modes of similarly large kt2.

The application discloses a temperature compensation type resonator based on polarity inversion double piezoelectric layers, a filter and a multiplexer, and belongs to the technical field of bulk acoustic wave resonators, and comprises a bottom electrode, a top electrode and a composite piezoelectric stack structure arranged between the bottom electrode and the top electrode, wherein the composite piezoelectric stack structure comprises two piezoelectric layers and a temperature compensation layer arranged between the two piezoelectric layers; the crystal polarity directions of the two piezoelectric layers are opposite, and the thicknesses are arranged according to a preset ratio, so that the temperature compensation layer is located in a vibration displacement minimum value region of the composite piezoelectric stack structure in a resonant state. The temperature compensation type resonator aims to solve the problem that the existing bulk acoustic wave resonator is difficult to balance between temperature stability and electrical performance, and lacks optimal design of polarity configuration of the piezoelectric layer, and cannot fully utilize the performance potential of the piezoelectric material, thereby limiting the performance improvement of the temperature compensation type resonator, and achieves the balance between temperature stability and electrical performance, and realizes the unity of high performance and high stability.

The application discloses a preparation method of an air-gap thin film bulk acoustic wave filter, and comprises the following steps: S1, sequentially depositing a passivation layer, an upper electrode, a piezoelectric layer and a lower electrode on the surface of a first substrate, and patterning the lower electrode; S2, depositing a support layer on the lower electrode, polishing and patterning the support layer to form a cavity; S3, bonding the support layer with a second substrate; S4, removing the first substrate, and taking the second substrate as the substrate of the filter; S5, patterning the passivation layer, the upper electrode and the piezoelectric layer; S6, depositing a PAD material on the surface of the filter; and S7, adjusting the passivation layer according to the test result. The growth order of the passivation layer is changed, so that the purpose of not deteriorating the resonator Q value is achieved. The passivation layer is preferentially deposited, compared with the deposition after the cavity is formed, the stress of the material layer is not increased, and the Q value can be further improved. Meanwhile, there is no step generated by patterning, and the consistency of the passivation layer film is better.

The invention discloses a temperature compensation type film bulk acoustic resonator and a preparation method thereof. The temperature compensation type film bulk acoustic resonator comprises a substrate structure, a resonance cavity structure, a temperature compensation layer, a seed layer, an acoustic composite film and an acoustic composite film structure. The resonant cavity structure sets a release boundary based on a release or addition process step of the substrate cavity; the substrate adopts a wafer with an oxide layer, and the oxide layer serves as a temperature compensation layer of the resonator; the seed layer is located above the temperature compensation layer and below the sound wave composite film structure; the sound wave composite film comprises a piezoelectric film, a bottom conductive film and a top conductive film. Due to the temperature compensation layer on the lower portion of the seed layer, the film bulk acoustic resonator has better temperature stability, and the cost of an extra temperature compensation preparation technology can be reduced. According to the designed preparation process, only an acoustic resonance area at the lower part of the electrode is reserved, the boundary of the resonator is in contact with air, and the prepared film bulk acoustic wave resonator has better performance.

The application relates to the technical field of surface acoustic wave devices, in particular to a structure and method for suppressing bulk acoustic wave interference in a multilayer SAW resonator, which comprises a support substrate, a bonding layer, a piezoelectric layer and an interdigital transducer, a reflective grating and an RF signal pad arranged in sequence from bottom to top; wherein an acoustic impedance matching and attenuating layer is arranged between the RF signal pad and the piezoelectric layer, and the acoustic impedance matching and attenuating layer is a single dielectric layer or a periodic multilayer film alternately stacked by two or more dielectric materials with different acoustic characteristics, and the material of the single dielectric layer is silicon dioxide or doped silicon dioxide. The application sets the acoustic impedance matching and attenuating layer between the RF signal pad and the piezoelectric layer, so as to effectively absorb and scatter the bulk acoustic wave energy generated below the pad, convert the bulk acoustic wave energy into heat energy, significantly weaken the bulk acoustic wave intensity, and improve the overall performance and consistency of the SAW device in high-frequency communication applications.

An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.

To provide a piezoelectric material that can be used as a substrate in an acoustic wave device, and an acoustic wave filter including the acoustic wave device.SOLUTION: Disclosed is a thin film bulk acoustic wave resonator (100) including a piezoelectric material (115) formed from aluminum nitride (AlN) doped with one or more of beryllium (Be), strontium (Sr), and sodium (Na) to enhance performance of the acoustic wave resonator.SELECTED DRAWING: Figure 1

The present disclosure provides a bulk acoustic wave resonator and a preparation method thereof, and an electronic device, and belongs to the technical field of communication. The bulk acoustic wave resonator comprises a substrate substrate (10), a first electrode (11), a piezoelectric layer (12) and a second electrode (13). The bulk acoustic wave filter further comprises a first biasing resistance layer (17) arranged on the side of the first electrode (11) close to the substrate substrate (10), and a first electrical isolation layer (18) arranged between the first biasing resistance layer (17) and the first electrode (11). The material of the first biasing resistance layer (17) is a high resistivity material. And / or, a second biasing resistance layer (110) arranged on the side of the second electrode (12) away from the substrate substrate (10), and a second electrical isolation layer (19) arranged between the second biasing resistance layer (110) and the second electrode (13). The material of the second biasing resistance layer (19) is a high resistivity material.

To provide a bulk acoustic wave resonator that is an acoustic wave device, an electronic device, and a module including these.SOLUTION: A bulk elastic resonator includes a membrane that includes a piezoelectric film having multiple layers of piezoelectric material. At least one layer of the multilayer piezoelectric material has a different dopant concentration than other layers of the multilayer piezoelectric material.SELECTED DRAWING: Figure 8A

A bulk acoustic wave resonator, a manufacturing method therefor, a filter and an electronic device. The bulk acoustic wave resonator comprises: a substrate; a first electrode, a piezoelectric thin film layer, and a second electrode which are stacked on the substrate, the piezoelectric thin film layer being arranged between the first electrode and the second electrode and covering the first electrode; a first reflective structure, the first reflective structure being arranged between the substrate and the piezoelectric thin film layer; and a second reflective structure, the second reflective structure being arranged on the substrate and embedded in the piezoelectric thin film layer. The bulk acoustic wave resonator, the manufacturing method therefor, the filter and the electronic device can increase Q values of small-area resonators, thereby improving the performance of the small-area resonators.

Aspects of this disclosure relate to a bulk acoustic wave resonator having an acoustically active region and a peripheral region. The bulk acoustic wave resonator can include a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a recessed frame structure at least partially in the acoustically active region. The piezoelectric layer can have an effective piezoelectric coefficient with a lower magnitude in the peripheral region than in the acoustically active region. Other embodiments of bulk acoustic wave resonators are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

The invention relates to a transverse excitation bulk acoustic wave resonator with an embedded electrode structure, which belongs to the technical field of radio frequency communication and comprises a substrate, a temperature compensation layer and a piezoelectric layer which are arranged in at least one of the following layouts: (1) the temperature compensation layer and the piezoelectric layer are sequentially formed on the substrate; a groove array is etched on one side, deviating from the temperature compensation layer, of the piezoelectric layer; (2) the piezoelectric layer and the temperature compensation layer are sequentially formed on the substrate, and a groove array is etched on one side, close to the temperature compensation layer, of the piezoelectric layer and on the temperature compensation layer; the transverse excitation bulk acoustic wave resonator further comprises an embedded electrode structure and a cavity, and the embedded electrode structure is formed in the groove array so as to suppress a stray mode; the cavity is formed in the substrate. Compared with the prior art, the resonator provided by the invention can effectively suppress a stray mode, so that an admittance curve between a resonant frequency (fr) and an anti-resonant frequency (fa) is smoother.

This invention discloses a high-power capacity bulk acoustic wave (BAW) device, belonging to the technical field of BAW devices. It includes a substrate, a support layer disposed above the substrate, and an acoustic cavity disposed within the support layer. A transducer stack covers the acoustic cavity, comprising a bottom electrode, a piezoelectric layer, and a top electrode stacked sequentially. At least one thermally conductive support pillar is disposed within the acoustic cavity, with one end connected to the transducer stack and the other end connected to the substrate, forming a heat conduction path for dissipating heat from the transducer stack to the substrate. The high-power capacity BAW device of this invention aims to solve the problem of ineffective heat dissipation in traditional BAW devices during high-power operation, thereby improving the device's power capacity and reliability and avoiding performance degradation and structural damage caused by heat accumulation.

A bulk acoustic wave resonance device includes: an acoustic reflection layer; the first electrode layer comprises a first resonance part and a first extension part; a piezoelectric layer; the second electrode layer comprises a second resonance part and a second extension part; a dielectric layer, wherein a first dielectric part of the dielectric layer is located between a part of the first extension part and the piezoelectric layer; the load layer corresponds to the second extension part; the first attenuation area is used for attenuating sound waves; and the first limiting area is used for reflecting sound waves. The first-order transverse mode can pass through the first attenuation area without being affected, and then is fully reflected back to the resonance area in the first limiting area, so that transverse leaky waves are reduced; the high-order lateral parasitic mode entering the first attenuation region is attenuated, and only a small number or even no high-order lateral parasitic mode enters the first confinement region, so that the parallel impedance value and the corresponding Q value can be improved.

The application relates to a device and a method for realizing particle aggregation in a droplet, which comprises: a microfluid channel for providing a channel for droplet flow; a first bulk acoustic resonator close to the microfluid channel, the working range of the first bulk acoustic resonator including the space in the microfluid channel; the overall shape of the first bulk acoustic resonator is arranged to be narrowed from the front end to the tail end, and the tail end is an outwardly convex arc-shaped end portion, the arc-shaped end portion being used for making particles in the droplet be aggregated at a first position in the droplet during the process that the droplet flows through the first bulk acoustic resonator; and the tail end is located on the downstream side in the microfluid channel relative to the front end. The scheme of the application can realize that particles in the droplet are aggregated at a first position in the droplet, so as to facilitate observation or the interaction of different particles in the droplet after aggregation.

This disclosure provides a bulk acoustic wave resonator, a bulk acoustic wave filter, and an electronic device, belonging to the field of communication technology. The bulk acoustic wave resonator of this disclosure includes: a substrate, on which a first electrode, a piezoelectric layer, and a second electrode are sequentially disposed; the bulk acoustic wave resonator is divided into a working region, a transition region surrounding the working region, and a peripheral region surrounding the transition region; the bulk acoustic wave resonator includes a first air gap and a second air gap located in the transition region; in a direction perpendicular to the substrate, the first air gap penetrates at least a portion of the thickness of the piezoelectric layer; the second electrode includes a first main body located in the working region and an edge portion located in the transition region and connected to the first main body, the first main body contacting the piezoelectric layer, and the edge portion having a certain gap with the piezoelectric layer, forming the second air gap; the orthographic projection of the second air gap onto the substrate layer covers the orthographic projection of the first air gap onto the substrate layer.

The invention relates to an in-ear earphone with a front cavity sound wave guide tube structure. The in-ear earphone comprises a shell with a sound outlet and a sound production unit arranged in the shell, the inner wall of the housing is provided with a sound wave conduit structure, and the sound wave conduit structure comprises a central sound collection part, a left sound collection part and a right sound collection part, the central sound collecting part forms a central sound gathering area, the left sound collecting part forms a plurality of left sound gathering areas, the right sound collecting part forms a plurality of right sound gathering areas, and the tail ends of the central sound gathering area, the left sound gathering areas and the right sound gathering areas extend to the sound outlet; the directional channel is formed through the sound wave conduit structure, the sound wave propagation path is corrected, sound waves at different positions can reach the ear canal relative to the same dimension, the listening effect is improved, the energy loss of the sound waves in transmission can be reduced, and the sound quality stability is improved.