646 results about "Bulk acoustic wave" patented technology

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

Aspects and embodiments disclosed herein include a bulk acoustic wave resonator comprising a layer of piezoelectric material and one of a top electrode disposed on top of the layer of piezoelectric material or a bottom electrode disposed on a bottom of the layer of piezoelectric material, the one of the top electrode or the bottom electrode including a Bragg pair having alternating layers of a first metal and a second metal.

A film bulk acoustic wave resonator comprising a piezoelectric film having a central region defining a main active domain in which a main acoustic wave is generated during operation, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on a lower surface of the piezoelectric film, a dielectric material layer disposed on a lower surface of the lower electrode, and lower recessed frame regions disposed laterally on opposite sides of the central region, the lower recessed frame regions defined by regions of one of the dielectric material or of the lower electrode having a lesser thickness than the thickness of the one of the dielectric material layer or of the lower electrode in the central region.

Aspects of this disclosure relate to a bulk acoustic wave resonator and an integrated capacitor. In certain embodiments, the integrated capacitor can be a metal-insulator-metal capacitor in parallel with the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include a portion of a first electrode and a portion of a second electrode of the bulk acoustic wave resonator. At least part of the metal-insulator-metal capacitor is positioned laterally relative to an acoustic reflector of the bulk acoustic wave resonator. Other embodiments of capacitors integrated with a bulk acoustic wave resonator are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

A bulk acoustic wave resonator and manufacturing method thereof and filter, the bulk acoustic wave resonator includes: a resonant body structure, and a carrier structure and a cover structure on two opposite sides of the resonant body structure; a first cavity is between the carrier structure and the resonant body structure; the cover structure includes a cover substrate, and a cover bonding layer, a second cavity is between the cover structure and the resonant body structure; first and second conductive connectors, and a pad layer are on opposite sides of the resonant body structure, and the pad layer includes one or more bonding pads bonded with the cover bonding layer, each bonding pad has a recess recessed toward the resonant body structure, and the cover bonding layer includes a protrusion part filling the recess and surrounded by the bonding pad.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

The present application discloses a bulk acoustic wave resonator and a preparation method thereof. The bulk acoustic wave resonator includes: a substrate, a transducer stacking structure, and a protective layer; the transducer stacking structure is located on one side of the substrate; a cavity is arranged in the substrate; the cavity penetrates through a portion of the substrate; a release channel is arranged in the transducer stacking structure; the release channel penetrates through the transducer stacking structure and is communicated to the cavity; the protective layer is arranged on a surface of one side of the transducer stacking structure away from the substrate; and the protective layer includes a waterproof material.

A bulk acoustic wave device and a capacitor in a bulk acoustic wave device are disclosed. The bulk acoustic wave device can include a resonator, an interconnect structure, and a capacitor. The resonator includes a first electrode, a second electrode, a piezoelectric layer between the first and second electrodes, and a passivation layer over the second electrode such that the second electrode is positioned between the piezoelectric layer and the passivation layer. The interconnect structure includes a conductive layer. The capacitor includes the passivation layer positioned between the conductive layer and the first or second electrode in a first direction. The capacitor, the resonator, and the interconnect structure are positioned in a second direction different from the first direction.

A ladder type acoustic wave filter is disclosed. The acoustic wave filter can include a plurality of parallel arm resonators and a plurality of series arm resonators, in which an electromechanical coupling coefficient of a parallel arm resonator closest to an input node of the acoustic wave filter among the plurality of parallel arm resonators can be smaller than an electromechanical coupling coefficient of a series arm resonator closest to the input node among the plurality of series arm resonators.

The invention discloses a three-dimensional temperature field online reconstruction system based on receiving and transmitting integrated sound wave sensing, and relates to the field of boiler monitoring. Comprising an information acquisition module, an emission control module, a reconstruction sensing module, a path optimization module, a sound wave receiving module, an amplitude limiting filtering module, a decoding separation module, a feature extraction module, a physical simulation module, a multi-source fusion module, a three-dimensional reconstruction module, a state monitoring module and an online calibration module. According to the method, the transmitted signal can still keep high identifiability in a high-noise and strong-interference background, the credibility of subsequent inversion and data assimilation is improved, a sensing network can be self-optimized, the observation precision and the space coverage capability are improved, a wide dynamic range and high linearity are realized, a simulation result is closer to a real working condition, and the method is suitable for large-scale popularization and application. And the reliability of temperature field inversion is obviously improved.

A duplexer including a support substrate, a reception signal terminal, a transmit signal terminal, an antenna terminal, a receive side filter formed on the support substrate and electrically coupling the reception signal terminal to the antenna terminal, a transmit side filter formed on the support substrate and electrically coupling the transmit signal terminal to the antenna terminal, a side wall surrounding the receive side filter and the transmit side filter, and a cap wafer disposed on the side wall and enclosing the receive side filter and the transmit side filter in a cavity defined by the cap wafer, the side wall, and the support substrate, there being no post disposed on the antenna terminal and in contact with the cap wafer.

The invention discloses a bulk acoustic wave filter, a preparation method thereof and a radio frequency module. The bulk acoustic wave filter includes at least: a substrate; the first film layer is located on one side of the substrate, the first film layer comprises a first area and a second area surrounding the first area, and a photosensitive dry film surrounding the first area is arranged in the second area; the piezoelectric film is positioned on one side, far away from the substrate, of the first film layer; wherein the piezoelectric film comprises a lithium niobate film and / or a lithium tantalate film; and the substrate, the photosensitive dry film and the piezoelectric film jointly form a cavity. According to the bulk acoustic wave filter, the photosensitive dry film is introduced and serves as the supporting layer and the sacrificial layer, the effect of supporting the lithium niobate thin film and / or the lithium tantalate thin film is achieved, and the effect of sacrificing part of the photosensitive dry film to form the cavity is achieved; and meanwhile, by utilizing the flexibility of the photosensitive dry film, the limitation on the lithium niobate and / or lithium tantalate crystal phase can be reduced, so that the application range of the lithium niobate film and / or lithium tantalate film in the radio frequency communication field is widened.

Aspects of this disclosure relate to bulk acoustic wave devices that include a first electrode, a second electrode, and a piezoelectric layer having a recess outside of the active region of the bulk acoustic wave device. The first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer throughout the active region. Related acoustic wave filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, methods of manufacture, and methods of filtering are disclosed.

The utility model provides a bulk acoustic wave filter, a multiplexer and communication equipment, and relates to the technical field of microwave devices. The bulk acoustic wave filter comprises a plurality of resonant branches which are electrically connected, each resonant branch comprises two resonant cavities which are oppositely arranged, the angle of the opposite cambered surfaces of the two resonant cavities on the same resonant branch is a first radian, the angle of the opposite cambered surfaces of the two resonant cavities on different resonant branches is a second radian, and the first radian is larger than the second radian. The first radian is smaller than the second radian. According to the bulk acoustic wave filter, through the arrangement, secondary harmonics can be reduced, harm caused by the secondary harmonics is avoided, the occupied area of the resonant cavity in the bulk acoustic wave filter is saved, and application of the bulk acoustic wave filter in a small scene is facilitated.

A self-adaptive fender system suitable for LNG side-by-side conveying is applied to an FSRU or FLNG or other fixed offshore LNG treatment platforms, movable fenders are fixed to the bow end and the stern end of a parallel midbody deck of a floating LNG receiving treatment platform respectively, and fixed fenders are fixed to the two ends of a collecting pipe area of the floating LNG receiving treatment platform respectively. The sound wave range finder is fixed to the end close to the bow portion of the fender body located on the bow portion of the parallel midbody deck, and the sound wave range finder is fixed to the end close to the stern portion of the fender body located on the stern portion of the parallel midbody deck. And the actual distance between the floating LNG receiving and processing platform and the LNG ship is continuously measured, the actual distance is compared with the theoretical distance, the movable fender moves till the actual distance is equal to the theoretical distance, and then the fender system automatically adapts to the parallel midbody range of the LNG ship. All the fender devices are always located in the parallel middle bodies of the two ships, and the situation that due to the fact that the positions of traditional fender devices cannot be adjusted, the traditional fender devices are located outside the parallel middle bodies of the LNG ships, and fenders fail is avoided.

A bulk acoustic wave (BAW) resonator includes: a substrate; a piezoelectric layer disposed above the substrate; a first electrode disposed below the piezoelectric layer and including a first portion and a second portion spaced apart from each other; a second electrode disposed above the piezoelectric layer; a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially disposed between the substrate and the piezoelectric layer in an order from the piezoelectric layer to the substrate; a cavity disposed below the first portion of the first electrode; a metal bonding layer disposed between the third dielectric layer and the substrate; and a ground pad metal layer disposed on the piezoelectric layer and electrically connected to the metal bonding layer.

The invention relates to a preparation method of a single-crystal piezoelectric film bulk acoustic resonator, and relates to the field of semiconductor device production processes, and the preparation method comprises the following steps: S1, preparing a single-crystal piezoelectric film and an electrode layer on a first substrate; s2, patterning the single crystal piezoelectric film and the electrode layer; s3, temporarily bonding the supporting slide glass with the first substrate through the adhesion layer; s4, removing the first substrate; s5, etching a photoetching through hole in the thin film body; s6, depositing metal to form a connecting part and a lower electrode; s7, processing a cavity structure on the second substrate; s8, preparing a transition layer on the surface of the second substrate; s9, removing the first part; s10, preparing a bonding layer on the second substrate; s11, processing a communication hole in the bonding layer and removing the second part; s12, bonding the lower electrode and the second substrate; and S13, removing the supporting slide glass and the adhesion layer. The method has the advantages that the bonding material uniformly covers the surface of the second substrate and the cavity structure, weak points are prevented from being formed at the cavity structure, and the reliability and stability of the bonding process are remarkably improved.

The invention relates to an acoustic resonator device and a forming method thereof, and a radio frequency filter. The acoustic resonator device comprises a substrate layer; the sacrificial layer is located on the substrate layer and comprises a cavity; the piezoelectric film layer is located on the sacrificial layer and comprises at least one strip-shaped piezoelectric film and etching grooves located in the two sides of each strip-shaped piezoelectric film, and the etching grooves are communicated with the cavity; the bottom conductor layer is located below the piezoelectric film layer and comprises a bottom bus bar and at least one bottom finger bar electrode suspended in the cavity; the top conductor layer is located on the piezoelectric film layer and comprises a top bus bar, a top terminal, a bottom terminal and at least one top finger bar electrode; the top finger strip electrodes, the bottom finger strip electrodes and the strip-shaped piezoelectric films are in one-to-one correspondence. In the embodiment of the invention, the suspended top finger strip electrode, the strip-shaped piezoelectric film and the bottom finger strip electrode are arranged in the device to support a mode of double shear bulk acoustic waves excited by a vertical electric field, so that the device meets the requirements of higher frequency and larger bandwidth.

The invention discloses a bulk acoustic wave filter and electronic equipment. The bulk acoustic wave filter comprises a bulk acoustic wave resonator and a capacitor structure. The bulk acoustic wave resonator comprises an active region, and a first passive region and a second passive region which are positioned on two sides of the active region; the first passive region and the second passive region are arranged along a first direction. The capacitor structure is located on at least one side of the active region and partially surrounds the active region; the capacitor structure comprises a first electrode layer, a dielectric layer and a second electrode layer which are at least arranged along a second direction; the capacitor structure comprises at least one capacitor; in the thickness direction of the dielectric layer, the first electrode layer, the second electrode layer and the dielectric layer which are overlapped with the dielectric layer form a capacitor, and the capacitor is electrically connected with the bulk acoustic wave resonator; wherein the first direction intersects with the second direction. According to the technical scheme, the loss of bulk acoustic wave energy can be reduced, and the quality factor and the device performance of the bulk acoustic wave filter are improved.

Embodiments of the invention relate to an acoustic resonator device for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device has a composite piezoelectrical platelet which comprises a first piezoelectrical layer and a second piezoelectric layer with the same or similar acoustic impedance but with opposite phase wave excitation for a given wave polarization. The dimensions of the composite piezoelectrical platelet for a given static capacitance can hence be increased, while maintaining a wide bandwidth of the acoustic resonator device.

The utility model provides an IPD-integrated bulk acoustic wave filter and wireless communication equipment, and relates to the technical field of semiconductors. The bulk acoustic wave filter integrated with the IPD comprises a substrate, an acoustic wave reflection structure arranged on the substrate, a film bulk acoustic wave resonator, a parallel plate capacitor and a planar inductor, the film bulk acoustic wave resonator is located above the acoustic wave reflection structure, and the planar inductor is located between the film bulk acoustic wave resonator and the parallel plate capacitor. And the thin film bulk acoustic resonator and the parallel plate capacitor are electrically connected with each other. According to the bulk acoustic wave filter integrated with the IPD, the IPD technology is integrated into the BAW technology, and the integration level and the area utilization rate of the filter are greatly improved. A resonance circuit of the IPD is designed to generate an extremely wide passband, then the bulk acoustic wave resonators are designed, and the frequency of the bulk acoustic wave resonators falls on the two sides of the passband to improve roll-off of the filter, so that the wide passband can be generated, and the good out-of-band rejection effect can be achieved. In addition, by adopting the planar inductor, the technological process of the inductor structure is greatly simplified.

Aspects of this disclosure relate to an acoustic wave filter with shunt bulk acoustic wave resonators. In some embodiments, the acoustic wave filter is a band pass filter having a pass band. One of the shunt bulk acoustic wave resonators can contribute to forming an upper edge of the pass band. That shunt bulk acoustic wave resonator can be smaller than another shunt bulk acoustic wave resonator of the acoustic wave filter.

The invention provides a bulk acoustic wave resonator and a manufacturing method thereof, and the bulk acoustic wave resonator comprises a piezoelectric laminated structure which comprises a first electrode, a piezoelectric layer and a second electrode which are sequentially arranged from bottom to top; and the protective layer is arranged on one side, far away from the first electrode, of the second electrode so as to protect the frequency-modulated second electrode. The protection layer is arranged to protect the frequency-modulated second electrode, so that the second electrode is not influenced by external force impact, friction and the like in the subsequent process, the protection layer plays a role in protecting the second electrode, and the structural integrity and the performance stability of the second electrode are ensured; and long-term stability of the performance of the second electrode after frequency modulation is ensured.

The invention provides a bulk acoustic wave resonator, a filter and electronic equipment. The bulk acoustic wave resonator comprises a substrate layer, a Bragg reflection layer arranged on the substrate layer and a piezoelectric transduction structure layer arranged on the Bragg reflection layer. The Bragg reflection layer comprises a plurality of film layers which are arranged in a stacked mode, and the refractive indexes of every two adjacent film layers are different; the piezoelectric transduction structure layer comprises a piezoelectric layer and an electrode layer which are stacked; at least one film layer, close to the piezoelectric transduction structure layer, in the Bragg reflection layer is a preset film layer, the preset film layer comprises cavity parts and supporting parts, the cavity parts and the supporting parts are alternately arranged in the first direction, and the first direction is parallel to the substrate layer. According to the bulk acoustic wave resonator, acoustic wave energy is concentrated on the piezoelectric layer through the cavity parts, the electromechanical coupling coefficient of the bulk acoustic wave resonator is increased, under the alternate arrangement of the cavity parts and the supporting parts, the slowness curve of the main vibration mode of the bulk acoustic wave resonator is flattened, the transverse mode and stray response are restrained, and therefore the quality factor of the bulk acoustic wave resonator is improved.

The present disclosure relates to a bulk acoustic wave (BAW) device with electrostatic discharge (ESD) protection. The disclosed BAW device includes a substrate (106), an ESD protection layer (106) over the substrate (106), a first bottom reflector (109-1) over the ESD protection layer (108), a first bottom electrode (112-1) over the first bottom reflector (109-1), a first top electrode (118-1) vertically aligned with the first bottom electrode (112-1), and a piezoelectric layer (116C) vertically between the first bottom electrode (112-1) and the first top electrode (118-1). Herein, the ESD protection layer (108) is electrically insulating and eligible to achieve at least a 400 V breakdown voltage with a 200 nm thickness. The first bottom reflector (109-1) includes a stack of alternating high acoustic impedance conductive layers (120A-E) and low acoustic impedance conductive layers (120A-E). The first bottom electrode (112-1) is electrically connected to the first bottom reflector (109-1). A breakdown voltage of the piezoelectric layer (116C) is no more than the breakdown voltage of the ESD protection layer (108).

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

The invention discloses a film bulk acoustic resonator and a filter. The film bulk acoustic resonator comprises a substrate; a cavity is formed in the top of the substrate; a first electrode located at the top of the substrate; a first piezoelectric layer on the top of the first electrode; the second electrode is positioned at the top of the first piezoelectric layer; the device further comprises at least one functional structure. The functional structure is positioned from the bottom of the first piezoelectric layer to the upper part of the second electrode; the orthographic projection of the functional structure on the substrate falls into the cavity, and the area of the orthographic projection of the functional structure on the substrate is smaller than the area of the cavity. According to the technical scheme provided by the invention, the filter formed by the resonator realizes multi-passband filter response, so that the multiplexer only comprises one filter, the miniaturization of the multiplexer is realized, and meanwhile, the heat dissipation capability can be improved.

A bulk acoustic wave resonator and a method for manufacturing therefor are provided. The bulk acoustic wave resonator includes a substrate, a lower conductive layer, a piezoelectric layer, and an upper conductive layer. At least one first cavity located between the upper conductive layer and the piezoelectric layer is provided at a boundary of an overlapping area. A plurality of first support columns are provided in the at least one first cavity. The plurality of first support columns are used for dividing the at least one first cavity into a plurality of through holes at least partially located in the overlapping area. The plurality of through holes are arranged in a direction from a center of the overlapping area to the boundary.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.