459 results about "Bulk acoustic wave" patented technology

A film bulk acoustic wave resonator comprising a piezoelectric film having a central region defining a main active domain in which a main acoustic wave is generated during operation, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on a lower surface of the piezoelectric film, a dielectric material layer disposed on a lower surface of the lower electrode, and lower recessed frame regions disposed laterally on opposite sides of the central region, the lower recessed frame regions defined by regions of one of the dielectric material or of the lower electrode having a lesser thickness than the thickness of the one of the dielectric material layer or of the lower electrode in the central region.

Aspects of this disclosure relate to a bulk acoustic wave resonator and an integrated capacitor. In certain embodiments, the integrated capacitor can be a metal-insulator-metal capacitor in parallel with the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include a portion of a first electrode and a portion of a second electrode of the bulk acoustic wave resonator. At least part of the metal-insulator-metal capacitor is positioned laterally relative to an acoustic reflector of the bulk acoustic wave resonator. Other embodiments of capacitors integrated with a bulk acoustic wave resonator are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

The invention discloses a three-dimensional temperature field online reconstruction system based on receiving and transmitting integrated sound wave sensing, and relates to the field of boiler monitoring. Comprising an information acquisition module, an emission control module, a reconstruction sensing module, a path optimization module, a sound wave receiving module, an amplitude limiting filtering module, a decoding separation module, a feature extraction module, a physical simulation module, a multi-source fusion module, a three-dimensional reconstruction module, a state monitoring module and an online calibration module. According to the method, the transmitted signal can still keep high identifiability in a high-noise and strong-interference background, the credibility of subsequent inversion and data assimilation is improved, a sensing network can be self-optimized, the observation precision and the space coverage capability are improved, a wide dynamic range and high linearity are realized, a simulation result is closer to a real working condition, and the method is suitable for large-scale popularization and application. And the reliability of temperature field inversion is obviously improved.

A duplexer including a support substrate, a reception signal terminal, a transmit signal terminal, an antenna terminal, a receive side filter formed on the support substrate and electrically coupling the reception signal terminal to the antenna terminal, a transmit side filter formed on the support substrate and electrically coupling the transmit signal terminal to the antenna terminal, a side wall surrounding the receive side filter and the transmit side filter, and a cap wafer disposed on the side wall and enclosing the receive side filter and the transmit side filter in a cavity defined by the cap wafer, the side wall, and the support substrate, there being no post disposed on the antenna terminal and in contact with the cap wafer.

The invention provides a bulk acoustic wave resonator and a manufacturing method thereof, and the bulk acoustic wave resonator comprises a piezoelectric laminated structure which comprises a first electrode, a piezoelectric layer and a second electrode which are sequentially arranged from bottom to top; and the protective layer is arranged on one side, far away from the first electrode, of the second electrode so as to protect the frequency-modulated second electrode. The protection layer is arranged to protect the frequency-modulated second electrode, so that the second electrode is not influenced by external force impact, friction and the like in the subsequent process, the protection layer plays a role in protecting the second electrode, and the structural integrity and the performance stability of the second electrode are ensured; and long-term stability of the performance of the second electrode after frequency modulation is ensured.

The present disclosure relates to a bulk acoustic wave (BAW) device with electrostatic discharge (ESD) protection. The disclosed BAW device includes a substrate (106), an ESD protection layer (106) over the substrate (106), a first bottom reflector (109-1) over the ESD protection layer (108), a first bottom electrode (112-1) over the first bottom reflector (109-1), a first top electrode (118-1) vertically aligned with the first bottom electrode (112-1), and a piezoelectric layer (116C) vertically between the first bottom electrode (112-1) and the first top electrode (118-1). Herein, the ESD protection layer (108) is electrically insulating and eligible to achieve at least a 400 V breakdown voltage with a 200 nm thickness. The first bottom reflector (109-1) includes a stack of alternating high acoustic impedance conductive layers (120A-E) and low acoustic impedance conductive layers (120A-E). The first bottom electrode (112-1) is electrically connected to the first bottom reflector (109-1). A breakdown voltage of the piezoelectric layer (116C) is no more than the breakdown voltage of the ESD protection layer (108).

The invention relates to the field of microelectronic devices, in particular to a bulk acoustic wave resonator with a double-layer piezoelectric film structure, a preparation method and a filter, the bulk acoustic wave resonator comprises a cap wafer, and a dry film, a passivation layer, a silicon oxide layer, a high-resistance silicon wafer and RDL metal are sequentially arranged on the cap wafer; the dry film and the cap wafer form a dry film cavity, the passivation layer located above the dry film cavity extends into the dry film cavity, and a top electrode, a first piezoelectric film, a middle electrode, a second piezoelectric film and a bottom electrode are sequentially arranged on the passivation layer; the top electrode and the bottom electrode are used as first ports of the resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order resonance mode is jointly excited, meanwhile, a high electromechanical coupling coefficient is kept, and a wide fractional bandwidth is achieved at high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.

A bulk acoustic wave resonator and a method for manufacturing therefor are provided. The bulk acoustic wave resonator includes a substrate, a lower conductive layer, a piezoelectric layer, and an upper conductive layer. At least one first cavity located between the upper conductive layer and the piezoelectric layer is provided at a boundary of an overlapping area. A plurality of first support columns are provided in the at least one first cavity. The plurality of first support columns are used for dividing the at least one first cavity into a plurality of through holes at least partially located in the overlapping area. The plurality of through holes are arranged in a direction from a center of the overlapping area to the boundary.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate. The bulk acoustic wave (BAW) may further comprise a plurality of piezoelectric layers including first, second, third and fourth piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first, second, third and fourth piezoelectric layers may have respective piezoelectric axis orientations. The first, second, third and fourth piezoelectric layers may have respective thicknesses. Electromechanical coupling of the bulk acoustic wave (BAW) resonator may, but need not be limited.

According to the cavity type bulk acoustic wave resonator with the stepped cavity and the preparation method of the cavity type bulk acoustic wave resonator, the stepped cavity is adopted to buffer and reduce the pressure of the upper layer structure, the structural strength and stability are higher, the cavity is not prone to collapse during release, meanwhile, the edge stress is buffered and reduced, the material stripping risk is reduced, and the yield is increased. And the structure of the invention enhances edge heat dissipation, and is beneficial to improving the power capacity. The ScAlN thin film with good performance can be obtained by adopting the magnetron sputtering ScAlN as the piezoelectric layer and using Ti / Bt / AlN as the seed layer for growth, and the stability, the reliability and the comprehensive performance of the device are improved. The passivation layer is prepared on the surface of the device, so that mechanical damage of a subsequent process to a sensitive structure can be effectively prevented, sound wave energy can be limited in a piezoelectric oscillation region, and transverse leakage and energy loss are reduced; and the electric coupling between the FBAR and the substrate can be reduced, the radio frequency loss is reduced, and the Q value of the device is improved.

The invention is applicable to the technical field of grouting of mining engineering and geotechnical engineering, and provides a grouting diffusion space real-time sensing and tracking method based on slurry dynamic sound source localization, which comprises the following steps: active enhancement and characteristic modulation of a slurry dynamic sound source; building a stereo wave sensing network and acquiring high-fidelity sound wave data; carrying out AI-driven slurry sound source identification and three-dimensional space positioning; and the grouting diffusion process is subjected to three-dimensional real-time visualization and intelligent early warning. The invention creatively provides a comprehensive solution integrating sound source active enhancement modulation, stereophonic sensing network, artificial intelligence deep noise reduction and three-dimensional space inversion positioning, and the core of the comprehensive solution lies in that slurry flow sound signals which are originally weak and difficult to use are actively enhanced and are endowed with features; a traceable slurry power sound source signal with a high signal-to-noise ratio is constructed, and three-dimensional space real-time sensing and visual tracking of the slurry diffusion frontal surface position and the overall diffusion range are realized in combination with an advanced signal processing and positioning algorithm.

The invention relates to the technical field of microelectronics and MEMS manufacturing, in particular to a bulk acoustic resonator with a double-layer piezoelectric film and a preparation method thereof, according to the method, a heterogeneous integrated key structure is formed by a first piezoelectric layer and a second piezoelectric layer which are deposited on the two sides of a middle electrode layer respectively, the physical and process limits of a single-layer piezoelectric film FBAR are broken through, the high-frequency band is improved, and the high-frequency band is improved. A wider bandwidth is realized; middle electrode layer tuning is combined with back silicon through hole leading-out, front routing inductance is eliminated, and the low-loss characteristic of the filter under high frequency is guaranteed; the self-heating problem under large bandwidth and high power is effectively inhibited through heat dissipation integrated packaging, and the power bearing capacity is improved; the method is compatible with a CMOS (complementary metal oxide semiconductor) process and can be directly embedded into an existing production line, so that the volume is further reduced while the bulk acoustic wave resonator with the double-layer piezoelectric film can effectively cover a frequency band of more than 3GHz, and the problem that a single-layer piezoelectric film and a matched process thereof cannot meet the requirements of a next-generation radio frequency front end on high frequency, large bandwidth, high power and wafer-level packaging is solved.

A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second electrode. A polarization of a crystal structure of the second piezoelectric layer is opposite to a polarization of a crystal structure of the first piezoelectric layer to achieve higher order resonant frequencies in the BAW device by means other than merely thinning layers in the layer stack. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured to be a third electrode. In some examples, the BAW device includes at least one intermediate layer between the first and second piezoelectric layers, and a total combined thickness of the at least one intermediate layer is less than 4% of a total thickness of the layer stack.

The invention discloses an unmanned aerial vehicle precipitation enhancement system and method based on compressed gas sound wave driving, and relates to the technical field of artificial precipitation enhancement, and the method comprises the steps that an unmanned aerial vehicle aircraft provides flight support needed by system high-altitude operation, and supports fixed-height cruise and dual-mode positioning; the high-pressure gas supply module stores compressed gas and provides a continuous and controllable energy source for sound wave generation; the sound wave generation module converts the air pressure energy into sound energy and generates directional low-frequency sound waves, and the directional low-frequency sound waves act on a target cloud area to achieve precipitation enhancement catalysis; the control module is used for unmanned aerial vehicle flight state regulation and control, gas path on-off and pressure adjustment, sound wave frequency closed-loop control, receiving feedback data of all the modules and dynamically adjusting operation parameters through an algorithm. The damping suspension module absorbs counter-acting force generated when sound waves are generated, and interference on the flight attitude of the unmanned aerial vehicle is counteracted. Based on the design, light-weight, low-power-consumption, pollution-free and efficient artificial rainfall enhancement operation can be realized.

The application discloses a manufacturing method of a resonant filter. The method comprises the following steps: manufacturing a first substrate and a resonant filter structure, wherein the resonant filter structure is formed on a first side of the first substrate, the resonant filter structure comprises a bulk acoustic wave resonant structure and a Lamb wave resonant structure, the bulk acoustic wave resonant structure and the Lamb wave resonant structure are electrically connected, the bulk acoustic wave resonant structure comprises a first electrode structure, the Lamb wave resonant structure comprises a second electrode structure, the second electrode structure comprises a first interdigital electrode and a second interdigital electrode, the first electrode structure and the second electrode structure share a same first electrode layer, the first interdigital electrode is electrically connected with the outside, and the second interdigital electrode is electrically connected with the first electrode structure.

The present invention provides a micro-piezoelectric antenna based on a thin film bulk acoustic wave resonator (FBAR) structure. The antenna comprises, from bottom to top, a FBAR, an insulating passivation layer, and a second piezoelectric layer. The FBAR structure generates and transmits acoustic waves to the second piezoelectric layer, and also receives acoustic waves from the second piezoelectric layer and generates corresponding electrical signals. The second piezoelectric layer, under the excitation of received acoustic waves, causes standing waves within the second piezoelectric layer along the thickness direction to be in phase, or largely in phase, thereby radiating electromagnetic waves outward. The antenna also receives external electromagnetic waves and, under the action of the electromagnetic wave's electric field component, generates acoustic waves, which are then transmitted to the FBAR. This micro-piezoelectric antenna is compact, capable of multi-frequency resonance, and significantly improves the radiation efficiency of piezoelectric materials. It represents a future solution for the miniaturization of wireless communication systems.

The invention discloses a bulk acoustic wave resonator. The bulk acoustic wave resonator comprises a first electrode, a piezoelectric layer and a second electrode which are stacked, the electrode of the bulk acoustic wave resonator further comprises at least one group of irregular edges, each group of irregular edges comprises a first edge and a second edge which are adjacent to each other, an included angle is formed between the extension direction of the first edge and the extension direction of the second edge, and the first edge and the second edge are provided with nonlinear electrode boundaries; wherein the irregular edges of different groups are the edges of different electrodes, and the irregular edges of the same group are the edges of the same electrode. The manufacturing process of the bulk acoustic wave resonator is simplified, the stability and reliability of the bulk acoustic wave resonator are improved, meanwhile, resonance of a transverse mode can be restrained, dense distribution and layout of the resonators are facilitated, the design of the resonators is simplified, and the cost of the resonators is reduced.

Aspects and embodiments include a bulk acoustic wave resonator comprising a layer of piezoelectric material, an upper electrode disposed on top of the layer of piezoelectric material, the upper electrode including a metallic Bragg mirror having alternating layers of a first metal and a second metal, and a lower electrode disposed on a bottom of the layer of piezoelectric material, the lower electrode including a metallic Bragg mirror having alternating layers of a third metal and a fourth metal.

The embodiment of the present application provides a bulk acoustic wave filter and a communication device. The bulk acoustic wave filter comprises a top electrode, a piezoelectric layer, a bottom electrode and a support layer which are sequentially stacked; a first Bragg reflection layer connected to a side of the support layer away from the bottom electrode, an intermediate substrate layer is arranged on a side of the first Bragg reflection layer away from the support layer, and the length of the intermediate substrate layer is less than the length of the first Bragg reflection layer; a second Bragg reflection layer connected to the other side of the intermediate substrate layer; and a bottom substrate layer connected to a side of the second Bragg reflection layer away from the intermediate substrate layer. By arranging the intermediate substrate layer and the two Bragg reflection layers, the low-frequency bulk acoustic wave loss cavity is separated from the target frequency reflection working cavity, the temperature rise of the working cavity is slowed down, the temperature drift effect of the bulk acoustic wave filter is reduced, and the filter frequency stability is maintained.

The invention discloses a cavity type bulk acoustic wave resonator and a preparation method thereof, and relates to the field of semiconductor radio frequency devices. The preparation method comprises the following steps: (1) forming a piezoelectric layer on a temporary substrate; (2) forming and patterning a lower electrode layer; (3) a filling layer is formed and patterned, and the projection of the patterned lower electrode layer covers the patterned filling layer; (4) forming a wrapping layer to wrap the patterned lower electrode layer and the patterned filling layer; (5) bonding with a transfer substrate; (6) removing the temporary substrate; (7) forming an upper electrode layer on the piezoelectric layer, and patterning to enable the projection of the patterned filling layer to cover the patterned upper electrode layer; and (8) removing the filling layer to form a cavity. Wherein the filling layer is made of silicon dioxide, phosphorus-containing silicon dioxide or resin, and the wrapping layer is made of silicon or ceramic; according to the invention, various performances of the cavity type body wave resonator can be improved, and the process cost and the process difficulty of the cavity type body wave resonator are reduced.

The present invention relates to the technical field of communications, and provides a bulk acoustic resonator, a bulk acoustic wave filter, and an electronic device. The bulk acoustic resonator of the present invention comprises: a substrate, and a first electrode, a piezoelectric layer and a second electrode which are sequentially arranged on the substrate; the bulk acoustic resonator is divided into a working area, a transition area surrounding the working area, and a peripheral area surrounding the transition area; the bulk acoustic resonator comprises a first air gap and a second air gap which are located in the transition area; in a direction perpendicular to the substrate, the first air gap at least extends through part of the thickness of the piezoelectric layer; the second electrode comprises a first main body portion located in the working area, and an edge portion located in the transition area and connected to the first main body portion; the first main body portion is in contact with the piezoelectric layer; there is a certain gap between the edge portion and the piezoelectric layer, so as to form the second air gap; and the orthographic projection of the second air gap on a layer where the substrate is located covers the orthographic projection of the first air gap on the layer where the substrate is located.

The invention relates to the technical field of bulk acoustic wave resonators, and particularly provides a bulk acoustic wave resonator and a preparation method thereof.The resonator comprises a first substrate, a coating type structure film layer, a bottom electrode, a piezoelectric layer and a top electrode which are sequentially connected from bottom to top, an acoustic reflector is arranged on the coating type structure film layer, a temperature compensation layer is arranged in the bottom electrode, and the piezoelectric layer is arranged on the top electrode; the temperature coefficients of the bottom electrode, the piezoelectric layer and the top electrode are all opposite to the temperature coefficient of the temperature compensation layer; the resonator can effectively restrain resonant frequency drift generated by the bottom electrode, the piezoelectric layer and the top electrode.

A laminated ScxAl1-xN BAW resonator with complementary-switchable operation in thickness extensional modes (TEl and TEN). The resonator comprises ferroelectric ScxAl1-xN layers alternatively stacked with metal electrodes, enabling independent polarization switching of each piezoelectric layer. Opting for unanimous or alternative poling of the ScxAl1-xN layers, the resonator can be switched to operate in two complementary states with either TEl or TEN active resonance modes of similarly large kt2.

The application discloses a temperature compensation type resonator based on polarity inversion double piezoelectric layers, a filter and a multiplexer, and belongs to the technical field of bulk acoustic wave resonators, and comprises a bottom electrode, a top electrode and a composite piezoelectric stack structure arranged between the bottom electrode and the top electrode, wherein the composite piezoelectric stack structure comprises two piezoelectric layers and a temperature compensation layer arranged between the two piezoelectric layers; the crystal polarity directions of the two piezoelectric layers are opposite, and the thicknesses are arranged according to a preset ratio, so that the temperature compensation layer is located in a vibration displacement minimum value region of the composite piezoelectric stack structure in a resonant state. The temperature compensation type resonator aims to solve the problem that the existing bulk acoustic wave resonator is difficult to balance between temperature stability and electrical performance, and lacks optimal design of polarity configuration of the piezoelectric layer, and cannot fully utilize the performance potential of the piezoelectric material, thereby limiting the performance improvement of the temperature compensation type resonator, and achieves the balance between temperature stability and electrical performance, and realizes the unity of high performance and high stability.

This invention provides a method for manufacturing a bulk acoustic wave resonator, including a substrate provision step, an acoustic reflection structure formation step, and a stacked structure formation step. The stacked structure formation step includes: sequentially forming a lower electrode, a first piezoelectric layer, a second piezoelectric layer, and an upper electrode from bottom to top on the substrate or the acoustic reflection structure. The upper electrode, the second piezoelectric layer, the first piezoelectric layer, the lower electrode, and the acoustic reflection structure have an overlapping region in the device thickness direction, which constitutes the resonant region of the bulk acoustic wave resonator. The first piezoelectric layer is implemented using a doped piezoelectric material, which is doped with impurity elements to improve the electromechanical coupling coefficient of the first piezoelectric layer. The second piezoelectric layer is implemented using an undoped piezoelectric material. Correspondingly, this invention also provides a bulk acoustic wave resonator and a filter. Implementing this invention can yield a bulk acoustic wave resonator that balances electromechanical coupling coefficient and quality factor, has low parasitic modes, and exhibits stress balance.

The application discloses a preparation method of an air-gap thin film bulk acoustic wave filter, and comprises the following steps: S1, sequentially depositing a passivation layer, an upper electrode, a piezoelectric layer and a lower electrode on the surface of a first substrate, and patterning the lower electrode; S2, depositing a support layer on the lower electrode, polishing and patterning the support layer to form a cavity; S3, bonding the support layer with a second substrate; S4, removing the first substrate, and taking the second substrate as the substrate of the filter; S5, patterning the passivation layer, the upper electrode and the piezoelectric layer; S6, depositing a PAD material on the surface of the filter; and S7, adjusting the passivation layer according to the test result. The growth order of the passivation layer is changed, so that the purpose of not deteriorating the resonator Q value is achieved. The passivation layer is preferentially deposited, compared with the deposition after the cavity is formed, the stress of the material layer is not increased, and the Q value can be further improved. Meanwhile, there is no step generated by patterning, and the consistency of the passivation layer film is better.

The present invention provides a bulk acoustic wave resonator, which includes a substrate; a lower electrode, a piezoelectric layer, and an upper electrode, wherein the lower electrode, the piezoelectric layer, and the upper electrode are sequentially formed on the substrate from bottom to top; an acoustic reflection structure, wherein the acoustic reflection structure is formed within the substrate or between the substrate and the lower electrode, and the horizontal projection overlapping area of ​​the acoustic reflection structure and the lower electrode, the piezoelectric layer, and the upper electrode constitutes the resonance region of the bulk acoustic wave resonator; and a heat dissipation structure, wherein the heat dissipation structure includes a first heat dissipation portion and / or a second heat dissipation portion formed outside the resonance region, wherein the first heat dissipation portion is formed on the lower surface of the piezoelectric layer, and the second heat dissipation portion is formed on the upper surface of the piezoelectric layer. Accordingly, the present invention also provides a method for manufacturing a bulk acoustic wave resonator and an electronic device formed based on the bulk acoustic wave resonator. Implementation of the present invention is conducive to improving the heat dissipation capability of the device.

The invention discloses a temperature compensation type film bulk acoustic resonator and a preparation method thereof. The temperature compensation type film bulk acoustic resonator comprises a substrate structure, a resonance cavity structure, a temperature compensation layer, a seed layer, an acoustic composite film and an acoustic composite film structure. The resonant cavity structure sets a release boundary based on a release or addition process step of the substrate cavity; the substrate adopts a wafer with an oxide layer, and the oxide layer serves as a temperature compensation layer of the resonator; the seed layer is located above the temperature compensation layer and below the sound wave composite film structure; the sound wave composite film comprises a piezoelectric film, a bottom conductive film and a top conductive film. Due to the temperature compensation layer on the lower portion of the seed layer, the film bulk acoustic resonator has better temperature stability, and the cost of an extra temperature compensation preparation technology can be reduced. According to the designed preparation process, only an acoustic resonance area at the lower part of the electrode is reserved, the boundary of the resonator is in contact with air, and the prepared film bulk acoustic wave resonator has better performance.