806 results about "Bulk acoustic wave" patented technology

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure, and filters that utilize the bulk acoustic wave devices. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can extend inward further than the second raised frame layer. A width of the first raised frame layer that overlaps the first and second electrodes is between about 1.5 times to about 4 times larger than the combined thickness of the first electrode, the piezoelectric layer, and the second electrode.

The invention discloses a film bulk acoustic resonator and a filter. The film bulk acoustic resonator comprises a substrate; the substrate comprises a sound reflecting layer; the first electrode is positioned on one side of the substrate; the piezoelectric layer is located on the side, away from the substrate, of the first electrode; the second electrode is located on the side, away from the substrate, of the piezoelectric layer; the first electrode, the piezoelectric layer and the second electrode are overlapped in an effective working area along the thickness direction of the film bulk acoustic resonator; the at least one temperature compensation layer is located between the substrate and the second electrode, and the temperature compensation layer and the effective working area are overlapped in the thickness direction of the film bulk acoustic wave resonator; the temperature compensation layer comprises a plurality of independently arranged temperature compensation structures. By adopting the technical scheme, the temperature drift can be reduced and the performance of the resonator can be improved by arranging the plurality of independently arranged temperature compensation structures, and the working frequency of the resonator can be adjusted by adjusting the area and the thickness of the temperature compensation structures.

The invention provides a bulk acoustic wave resonator, a filter and a manufacturing method thereof. The bulk acoustic wave resonator comprises a bulk acoustic wave resonator carrier with a first resonant cavity, a first electrode layer, a piezoelectric layer, a second electrode layer and a bulk acoustic wave resonator cover body with a second resonant cavity and a heat dissipation layer, the heat dissipation layer is provided with at least one protrusion. The second electrode layer covers a first area of the first surface of the piezoelectric layer, and the first area is the surface, close to one side of the bulk acoustic resonator cover body, of the piezoelectric layer; the first electrode layer covers a second area of the second surface of the piezoelectric layer, and the second area is the surface, close to one side of the bulk acoustic resonator carrier, of the piezoelectric layer; the orthographic projection of the second area on the bulk acoustic wave resonator carrier is at least partially overlapped with the orthographic projection of the first area on the bulk acoustic wave resonator carrier. The heat dissipation layer with a special structure is arranged at a proper position, so that the heat dissipation area can be increased, the heat dissipation efficiency is improved, and the problems of poor heat dissipation effect, poor performance and the like of the bulk acoustic wave resonator are solved.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

Aspects and embodiments disclosed herein include a bulk acoustic wave resonator comprising a layer of piezoelectric material and one of a top electrode disposed on top of the layer of piezoelectric material or a bottom electrode disposed on a bottom of the layer of piezoelectric material, the one of the top electrode or the bottom electrode including a Bragg pair having alternating layers of a first metal and a second metal.

A film bulk acoustic wave resonator comprising a piezoelectric film having a central region defining a main active domain in which a main acoustic wave is generated during operation, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on a lower surface of the piezoelectric film, a dielectric material layer disposed on a lower surface of the lower electrode, and lower recessed frame regions disposed laterally on opposite sides of the central region, the lower recessed frame regions defined by regions of one of the dielectric material or of the lower electrode having a lesser thickness than the thickness of the one of the dielectric material layer or of the lower electrode in the central region.

A bulk acoustic wave (BAW) device includes a layer stack (102) including a first electrode (104A) and a second electrode (104B), a first piezoelectric layer (106A) between the electrodes, and a second piezoelectric layer (106B) between the first piezoelectric layer and the second electrode. The polarization (P2) of the crystal structure of the second piezoelectric layer is opposite the polarization (P1) of the crystal structure of the first piezoelectric layer to achieve a higher order resonant frequency in the BAW device by reducing only the layers in the stack of thin layers. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured as a third electrode. In some examples, the BAW device includes at least one intermediate layer (120, 122, 124) between the first and second piezoelectric layers, and the total combined thickness of the at least one intermediate layer is less than 4% of the total thickness of the layer stack.

Aspects of this disclosure relate to a bulk acoustic wave resonator and an integrated capacitor. In certain embodiments, the integrated capacitor can be a metal-insulator-metal capacitor in parallel with the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include a portion of a first electrode and a portion of a second electrode of the bulk acoustic wave resonator. At least part of the metal-insulator-metal capacitor is positioned laterally relative to an acoustic reflector of the bulk acoustic wave resonator. Other embodiments of capacitors integrated with a bulk acoustic wave resonator are disclosed. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

A bulk acoustic wave resonator and manufacturing method thereof and filter, the bulk acoustic wave resonator includes: a resonant body structure, and a carrier structure and a cover structure on two opposite sides of the resonant body structure; a first cavity is between the carrier structure and the resonant body structure; the cover structure includes a cover substrate, and a cover bonding layer, a second cavity is between the cover structure and the resonant body structure; first and second conductive connectors, and a pad layer are on opposite sides of the resonant body structure, and the pad layer includes one or more bonding pads bonded with the cover bonding layer, each bonding pad has a recess recessed toward the resonant body structure, and the cover bonding layer includes a protrusion part filling the recess and surrounded by the bonding pad.

The invention discloses a bulk acoustic wave resonator, a preparation method thereof and a filter, and relates to the technical field of resonators. The bulk acoustic wave resonator comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode, the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the substrate, a groove is formed in the substrate, and the overlapping area of the bottom electrode, the piezoelectric layer and the top electrode in the stacking direction serves as a resonance area. The top electrode comprises a first electrode pattern located in the resonance area and a second electrode pattern located outside the resonance area, the second electrode pattern and the first electrode pattern are arranged at an interval, a dielectric layer and a third electrode pattern are sequentially arranged on the second electrode pattern, and the second electrode pattern, the dielectric layer and the third electrode pattern form a capacitor. According to the bulk acoustic wave resonator, the preparation method thereof and the filter, the problems that in the prior art, extra leads are needed and the device area is large due to the fact that an external capacitor of a bulk acoustic wave resonator is additionally arranged can be solved, corresponding electrical parasitism is avoided, and then the device performance can be improved.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

The present application discloses a bulk acoustic wave resonator and a preparation method thereof. The bulk acoustic wave resonator includes: a substrate, a transducer stacking structure, and a protective layer; the transducer stacking structure is located on one side of the substrate; a cavity is arranged in the substrate; the cavity penetrates through a portion of the substrate; a release channel is arranged in the transducer stacking structure; the release channel penetrates through the transducer stacking structure and is communicated to the cavity; the protective layer is arranged on a surface of one side of the transducer stacking structure away from the substrate; and the protective layer includes a waterproof material.

A bulk acoustic wave device and a capacitor in a bulk acoustic wave device are disclosed. The bulk acoustic wave device can include a resonator, an interconnect structure, and a capacitor. The resonator includes a first electrode, a second electrode, a piezoelectric layer between the first and second electrodes, and a passivation layer over the second electrode such that the second electrode is positioned between the piezoelectric layer and the passivation layer. The interconnect structure includes a conductive layer. The capacitor includes the passivation layer positioned between the conductive layer and the first or second electrode in a first direction. The capacitor, the resonator, and the interconnect structure are positioned in a second direction different from the first direction.

The invention provides a cavity type bulk acoustic wave resonator with a Bragg reflection layer and a preparation method of the cavity type bulk acoustic wave resonator, and relates to the technical field of bulk acoustic wave resonator manufacturing. The cavity type bulk acoustic wave resonator comprises a first substrate, a bottom electrode, a piezoelectric layer and a top electrode which are stacked in sequence, a cavity is formed between the first substrate and the bottom electrode, the cavity is provided with a plurality of supporting columns, the supporting columns are used for supporting the first substrate and the bottom electrode, each supporting column comprises at least one group of Bragg reflection layers, and the Bragg reflection layers are arranged in the cavity. The Bragg reflection layer is formed by stacking a first material and a second material, and the acoustic impedance of the first material is higher than that of the second material. The cavity type bulk acoustic wave resonator solves the problem that an existing supporting column increases energy loss, and it is guaranteed that the resonator has more stable performance while the electromechanical coupling coefficient is increased.

An acoustic wave filter with different bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A ladder type acoustic wave filter is disclosed. The acoustic wave filter can include a plurality of parallel arm resonators and a plurality of series arm resonators, in which an electromechanical coupling coefficient of a parallel arm resonator closest to an input node of the acoustic wave filter among the plurality of parallel arm resonators can be smaller than an electromechanical coupling coefficient of a series arm resonator closest to the input node among the plurality of series arm resonators.

The invention discloses a three-dimensional temperature field online reconstruction system based on receiving and transmitting integrated sound wave sensing, and relates to the field of boiler monitoring. Comprising an information acquisition module, an emission control module, a reconstruction sensing module, a path optimization module, a sound wave receiving module, an amplitude limiting filtering module, a decoding separation module, a feature extraction module, a physical simulation module, a multi-source fusion module, a three-dimensional reconstruction module, a state monitoring module and an online calibration module. According to the method, the transmitted signal can still keep high identifiability in a high-noise and strong-interference background, the credibility of subsequent inversion and data assimilation is improved, a sensing network can be self-optimized, the observation precision and the space coverage capability are improved, a wide dynamic range and high linearity are realized, a simulation result is closer to a real working condition, and the method is suitable for large-scale popularization and application. And the reliability of temperature field inversion is obviously improved.

An acoustic resonator module has and first and second bulk acoustic wave devices with a common shared air cavity structure between a piezoelectric layer and a substrate.

A duplexer including a support substrate, a reception signal terminal, a transmit signal terminal, an antenna terminal, a receive side filter formed on the support substrate and electrically coupling the reception signal terminal to the antenna terminal, a transmit side filter formed on the support substrate and electrically coupling the transmit signal terminal to the antenna terminal, a side wall surrounding the receive side filter and the transmit side filter, and a cap wafer disposed on the side wall and enclosing the receive side filter and the transmit side filter in a cavity defined by the cap wafer, the side wall, and the support substrate, there being no post disposed on the antenna terminal and in contact with the cap wafer.

The invention discloses a bulk acoustic wave filter, a preparation method thereof and a radio frequency module. The bulk acoustic wave filter includes at least: a substrate; the first film layer is located on one side of the substrate, the first film layer comprises a first area and a second area surrounding the first area, and a photosensitive dry film surrounding the first area is arranged in the second area; the piezoelectric film is positioned on one side, far away from the substrate, of the first film layer; wherein the piezoelectric film comprises a lithium niobate film and / or a lithium tantalate film; and the substrate, the photosensitive dry film and the piezoelectric film jointly form a cavity. According to the bulk acoustic wave filter, the photosensitive dry film is introduced and serves as the supporting layer and the sacrificial layer, the effect of supporting the lithium niobate thin film and / or the lithium tantalate thin film is achieved, and the effect of sacrificing part of the photosensitive dry film to form the cavity is achieved; and meanwhile, by utilizing the flexibility of the photosensitive dry film, the limitation on the lithium niobate and / or lithium tantalate crystal phase can be reduced, so that the application range of the lithium niobate film and / or lithium tantalate film in the radio frequency communication field is widened.

Aspects of this disclosure relate to bulk acoustic wave devices that include a first electrode, a second electrode, and a piezoelectric layer having a recess outside of the active region of the bulk acoustic wave device. The first electrode and the second electrode overlap and are on opposing sides of the piezoelectric layer throughout the active region. Related acoustic wave filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, methods of manufacture, and methods of filtering are disclosed.

The utility model provides a bulk acoustic wave filter, a multiplexer and communication equipment, and relates to the technical field of microwave devices. The bulk acoustic wave filter comprises a plurality of resonant branches which are electrically connected, each resonant branch comprises two resonant cavities which are oppositely arranged, the angle of the opposite cambered surfaces of the two resonant cavities on the same resonant branch is a first radian, the angle of the opposite cambered surfaces of the two resonant cavities on different resonant branches is a second radian, and the first radian is larger than the second radian. The first radian is smaller than the second radian. According to the bulk acoustic wave filter, through the arrangement, secondary harmonics can be reduced, harm caused by the secondary harmonics is avoided, the occupied area of the resonant cavity in the bulk acoustic wave filter is saved, and application of the bulk acoustic wave filter in a small scene is facilitated.

A self-adaptive fender system suitable for LNG side-by-side conveying is applied to an FSRU or FLNG or other fixed offshore LNG treatment platforms, movable fenders are fixed to the bow end and the stern end of a parallel midbody deck of a floating LNG receiving treatment platform respectively, and fixed fenders are fixed to the two ends of a collecting pipe area of the floating LNG receiving treatment platform respectively. The sound wave range finder is fixed to the end close to the bow portion of the fender body located on the bow portion of the parallel midbody deck, and the sound wave range finder is fixed to the end close to the stern portion of the fender body located on the stern portion of the parallel midbody deck. And the actual distance between the floating LNG receiving and processing platform and the LNG ship is continuously measured, the actual distance is compared with the theoretical distance, the movable fender moves till the actual distance is equal to the theoretical distance, and then the fender system automatically adapts to the parallel midbody range of the LNG ship. All the fender devices are always located in the parallel middle bodies of the two ships, and the situation that due to the fact that the positions of traditional fender devices cannot be adjusted, the traditional fender devices are located outside the parallel middle bodies of the LNG ships, and fenders fail is avoided.

A bulk acoustic wave (BAW) resonator includes: a substrate; a piezoelectric layer disposed above the substrate; a first electrode disposed below the piezoelectric layer and including a first portion and a second portion spaced apart from each other; a second electrode disposed above the piezoelectric layer; a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially disposed between the substrate and the piezoelectric layer in an order from the piezoelectric layer to the substrate; a cavity disposed below the first portion of the first electrode; a metal bonding layer disposed between the third dielectric layer and the substrate; and a ground pad metal layer disposed on the piezoelectric layer and electrically connected to the metal bonding layer.

The invention relates to a preparation method of a single-crystal piezoelectric film bulk acoustic resonator, and relates to the field of semiconductor device production processes, and the preparation method comprises the following steps: S1, preparing a single-crystal piezoelectric film and an electrode layer on a first substrate; s2, patterning the single crystal piezoelectric film and the electrode layer; s3, temporarily bonding the supporting slide glass with the first substrate through the adhesion layer; s4, removing the first substrate; s5, etching a photoetching through hole in the thin film body; s6, depositing metal to form a connecting part and a lower electrode; s7, processing a cavity structure on the second substrate; s8, preparing a transition layer on the surface of the second substrate; s9, removing the first part; s10, preparing a bonding layer on the second substrate; s11, processing a communication hole in the bonding layer and removing the second part; s12, bonding the lower electrode and the second substrate; and S13, removing the supporting slide glass and the adhesion layer. The method has the advantages that the bonding material uniformly covers the surface of the second substrate and the cavity structure, weak points are prevented from being formed at the cavity structure, and the reliability and stability of the bonding process are remarkably improved.

A wafer-level package module includes a first substrate having a first bulk acoustic wave (BAW) device mounted thereon with a first aluminum nitride piezoelectric layer. The wafer-level package module further includes a second substrate having a second BAW device mounted thereon with a second aluminum nitride piezoelectric layer. The first BAW device has a electromechanical coupling coefficient (kt2) different from the second BAW device.

The invention relates to an acoustic resonator device and a forming method thereof, and a radio frequency filter. The acoustic resonator device comprises a substrate layer; the sacrificial layer is located on the substrate layer and comprises a cavity; the piezoelectric film layer is located on the sacrificial layer and comprises at least one strip-shaped piezoelectric film and etching grooves located in the two sides of each strip-shaped piezoelectric film, and the etching grooves are communicated with the cavity; the bottom conductor layer is located below the piezoelectric film layer and comprises a bottom bus bar and at least one bottom finger bar electrode suspended in the cavity; the top conductor layer is located on the piezoelectric film layer and comprises a top bus bar, a top terminal, a bottom terminal and at least one top finger bar electrode; the top finger strip electrodes, the bottom finger strip electrodes and the strip-shaped piezoelectric films are in one-to-one correspondence. In the embodiment of the invention, the suspended top finger strip electrode, the strip-shaped piezoelectric film and the bottom finger strip electrode are arranged in the device to support a mode of double shear bulk acoustic waves excited by a vertical electric field, so that the device meets the requirements of higher frequency and larger bandwidth.

The invention discloses a bulk acoustic wave filter and electronic equipment. The bulk acoustic wave filter comprises a bulk acoustic wave resonator and a capacitor structure. The bulk acoustic wave resonator comprises an active region, and a first passive region and a second passive region which are positioned on two sides of the active region; the first passive region and the second passive region are arranged along a first direction. The capacitor structure is located on at least one side of the active region and partially surrounds the active region; the capacitor structure comprises a first electrode layer, a dielectric layer and a second electrode layer which are at least arranged along a second direction; the capacitor structure comprises at least one capacitor; in the thickness direction of the dielectric layer, the first electrode layer, the second electrode layer and the dielectric layer which are overlapped with the dielectric layer form a capacitor, and the capacitor is electrically connected with the bulk acoustic wave resonator; wherein the first direction intersects with the second direction. According to the technical scheme, the loss of bulk acoustic wave energy can be reduced, and the quality factor and the device performance of the bulk acoustic wave filter are improved.

Embodiments of the invention relate to an acoustic resonator device for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device has a composite piezoelectrical platelet which comprises a first piezoelectrical layer and a second piezoelectric layer with the same or similar acoustic impedance but with opposite phase wave excitation for a given wave polarization. The dimensions of the composite piezoelectrical platelet for a given static capacitance can hence be increased, while maintaining a wide bandwidth of the acoustic resonator device.