24results about "Wave amplification devices" patented technology

The invention relates to the technical field of signal detection, in particular to a weak electric field signal detection method and system. According to the invention, complete information of frequency, amplitude and phase of a to-be-measured electric field signal is obtained at the same time in one measurement of the injection locking phonon laser, a to-be-measured laser amplitude spectrum and a to-be-measured laser phase spectrum are generated by the same injection locking phonon laser, and the amplitude signal and the phase signal which are measured and received must arrive at the same time. The two are simultaneous in time and have natural orthogonality in physics; therefore, compared with a traditional double-phase lock amplifier for analyzing two asynchronous signals to be measured received by two frequency mixers, the method for analyzing the laser amplitude spectrum and the laser phase spectrum to be measured to obtain the electric field information to be measured has the advantages that the accuracy is higher; the double-phase lock amplifier solves the technical problem of measurement errors caused by deviation of to-be-measured signals received by two frequency mixers in a traditional double-phase lock amplifier.

The application provides a kind of X-ray free electron laser and femtosecond laser space-time coupling system and method, it is related to X-ray free electron laser and femtosecond laser field.The space-time coupling system of the application includes medium platform for placing coupling medium, X-ray source for emitting X-ray free electron laser, femtosecond laser system for emitting femtosecond laser and controlling femtosecond laser optical path, vacuum coaxial microscope for observing reflected light on coupling medium and data acquisition system for collecting various signals.The application can couple X-ray free electron laser and femtosecond laser.In the aspect of space coupling, multiple mirrors and lenses are provided, so that X-ray free electron laser and femtosecond laser can realize micron-level space coupling on coupling medium;In the aspect of time coupling, by the principle that X-ray free electron laser can cause refractive index mutation of coupling medium (the time scale of mutation is femtosecond), femtosecond-level time coupling of X-ray free electron laser and femtosecond laser is realized.

The application relates to a liquid sheet injection system and method for X-ray free electron laser experiments, which comprises a pneumatic nozzle device, a flow control device, a signal acquisition device and a vacuum device; the pneumatic nozzle device and the signal acquisition device are respectively arranged in the vacuum device, the pneumatic nozzle device comprises a tube assembly, a gas capillary and a liquid capillary are respectively arranged in the tube assembly, and the gas capillary and the liquid capillary are connected with the flow control device; the end of the liquid capillary comprises two symmetrically arranged flow guide inclined surfaces, two symmetrically arranged abutting inclined surfaces and a bottom surface, the flow guide inclined surfaces and the abutting inclined surfaces are alternately distributed around the bottom surface, and a first outlet is arranged on the bottom surface; a gas micro-flow channel is formed between the end inner wall of the tube assembly and the flow guide inclined surface, and a second outlet is arranged at the end of the tube assembly. The application utilizes the compression and shearing effect of high-speed gas on liquid to generate a free-flowing liquid sheet with a sub-micron thickness under vacuum.

The invention provides an adjustable tapering undulator and device based on beat frequency superposition and a method for broadening a spectrum, and is applied to the technical field of synchrotron radiation and the technical field of free electron laser. The undulator comprises a first magnetic array structure which comprises a plurality of groups of first permanent magnet units and is used for generating a first magnetic field; the second magnetic array structure comprises a plurality of groups of second permanent magnet units and is used for generating a second magnetic field; the phase shift driving structure is used for responding to a target superposed magnetic field after the beat frequency superposition of the first magnetic field and the second magnetic field, and determining the beat frequency magnetic period length of the target superposed magnetic field according to the first magnetic period length and the second magnetic period length; and according to the tapering requirement of the undulator, determining a target phase shift from a target beat frequency envelope constructed based on the attribute parameters of the adjustable tapering undulator and the beat frequency magnetic period length, and driving the phase shift driving structure to enable the first magnetic array structure and / or the second magnetic array structure to translate along the advancing direction of the electron beam.

This invention discloses a method for analyzing soft X-ray gain phenomena in trapped ions and the cavity type of the X-ray laser, mainly relating to the field of soft X-ray gain phenomena. The method includes: S1, calculating the small-signal gain coefficient α of the X-ray gain medium to obtain numerical information about the gain coefficient α; S2, the above calculation in S1 requires simulating ion source conditions, selecting different electron densities and incident electron energy points; S3, considering the differences between the ion source and the plasma environment, calculating the small-signal gain coefficient at the center frequency; and S4, analyzing the obtained data. The beneficial effects of this invention are: through the X-ray resonant cavity structure, the output beam can achieve high coherence and good beam quality similar to conventional lasers. It supports high repetition rates and even continuous wave operation, and through continuous collisional excitation and ion reuse in ultra-high vacuum, it eliminates the dependence on driving lasers and target materials, thereby improving peak gain.

This invention relates to an X-ray free-electron laser shutter system, comprising a vacuum chamber. The vacuum chamber has an entrance flange on its front side and an exit flange on its rear side. The light beam enters the vacuum chamber through the entrance flange and exits outwards through the exit flange. The key feature is that the vacuum chamber is equipped with a front light-blocking arm and a rear light-blocking arm. Another technical solution of this invention provides a control method for the X-ray free-electron laser shutter system. This invention achieves both damage resistance and radiation blocking by combining a damage-resistant light-blocking plate with a heavy metal light-blocking plate. The easily removable damage-resistant light-blocking plate acknowledges its potential for damage and utilizes its working lifespan to achieve light blocking. An interlocking mechanism that burns through the detector ensures that the shutter will not damage downstream equipment due to failure. The use of dual light-blocking arms and an electromagnet to control the on / off time difference between the two light-blocking arms achieves a millisecond-level window time, greatly reducing the requirements for light-blocking arm movement control.

The invention discloses a tunable infrared multi-resonance thermal emitter system based on an MgTeMoO6-graphene microcavity structure, and the system achieves the strong coupling between MgTeMoO6 phonon polaritons and graphene plasmon polaritons, enhances the light-substance interaction in a hybrid mode, and improves the intensity and directivity of a thermal emission peak value. While the three-vibrator model is used for predicting multi-frequency resonance, dynamic, continuous and controllable wavelength tuning can be realized by means of a graphene Fermi level regulation and control mechanism; benefited from the broad-spectrum phonon response and excellent lattice characteristics of the MgTeMoO6 material, the system effectively fills the structural vacancy of the tunable thermal emitter in the far infrared band; the integral thickness of the structure is small, the layering is clear, and the structure is suitable for being integrated with an existing MEMS infrared chip platform, a thermal light source array and a sensing array system; by constructing the MgTeMoO6-graphene micro-cavity structure, mid-infrared thermal emission control of multiple resonance modes is achieved, a brand new solution and theoretical support are provided for a multi-frequency thermal light source, an infrared functional device and a dynamic thermal radiation regulation and control technology, and the MgTeMoO6-graphene micro-cavity structure has wide application prospects and practical value.

The application provides a double-period undulator, which comprises upper and lower magnetic carrier structures that can move relative to each other, two magnet array structures fixed on the lower magnetic carrier structure, and two magnet array structures fixed on the upper magnetic carrier structure, wherein the four magnet array structures form a first and a second undulator; the relative positions of the four magnet array structures in the z direction are such that when the two magnet array structures of one of the first and second undulators are aligned and work, the two magnet array structures of the other one are in positions that are staggered with each other in the z direction and can generate repulsive force, and the z direction is the beam propagation direction of the double-period undulator. The double-period undulator of the application generates repulsive force when two of the four magnet array structures are staggered to compensate for the attractive force of the aligned magnet array structures, thereby reducing the magnetic force load of the undulator based on magnetic force compensation, reducing the overall volume of the undulator, and expanding the energy range of the radiated photons under the same undulator volume.

The application discloses a semiconductor green laser element, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer in sequence, wherein the upper waveguide layer and the upper limiting layer are provided with a topological phonon transition layer, and the topological phonon transition layer comprises a first topological phonon transition layer, a second topological phonon transition layer and a third topological phonon transition layer. The application realizes the synergistic regulation of phonon transport, reduces the phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces the heat accumulation of the active layer, reduces the temperature of the active layer, reduces the hole injection barrier and improves the hole injection efficiency, improves the overlap probability of the electron-hole wave function of the active layer, thereby strengthening the laser element, improving the aging light attenuation, the aging life and the reliability under the condition of high power and large current, and improving the lasing power and the slope efficiency of the laser element.

This disclosure relates to an undulator control method and apparatus, an undulator, and an optical system. The undulator control method includes: maintaining the temperature of a superconducting material section at a temperature greater than or equal to a first preset temperature by a temperature control unit, and generating a background magnetic field with a first preset background field strength by a first magnetic field generating component; maintaining the background field strength of the background magnetic field at the first preset background field strength, and reducing the temperature of the superconducting material section from the first preset temperature to a second preset temperature by the temperature control unit; maintaining the superconducting material section in a superconducting state, and reducing the background field strength from the first preset background field strength to the second preset background field strength by the first magnetic field generating component, so that the superconducting material section generates an undulating magnetic field with a preset undulation field strength; and maintaining the background field strength at the second preset background field strength, and increasing the temperature of the superconducting material section by the temperature control unit to reduce the undulation field strength of the undulation magnetic field until the undulator generates light with a target fundamental wavelength.

A method and an apparatus for selectively cancelling the effect of the active center of a molecule are provided. The method comprises illuminating a target molecule with two synchronized ultrashort X-ray pulses using a laser, the two synchronized ultrashort X-ray pulses having different central photon energies the subtraction of which matches the photon energy of a peak of the core spectrum of the target molecule, such that a core state of an atom of the target molecule, and also of identical surrounding molecules, is selectively excited by the re-DFG effect as a result of the illumination. The method is implementable for simple or complex molecular systems and bulk materials.

The present application relates to the technical field of signal detection, in particular to a weak electric field signal detection method and system. The present application obtains the complete information of the frequency, amplitude and phase of the to-be-detected electric field signal in one measurement of the injection-locked phonon laser, wherein the to-be-detected laser amplitude spectrum and the to-be-detected laser phase spectrum are generated by the same injection-locked phonon laser, and the received amplitude signal and phase signal must arrive at the same time, which are simultaneous in time and naturally orthogonal in physics; therefore, the to-be-detected electric field information is obtained by analyzing the laser amplitude spectrum and the to-be-detected laser phase spectrum, which is more accurate than the traditional dual-phase lock amplifier analyzing two different to-be-detected signals received by two mixers, and solves the technical problem of measurement error caused by the deviation of the to-be-detected signals received by the two mixers in the traditional dual-phase lock amplifier.

Systems, computer-implemented methods, and / or computer program products that can facilitate target qubit decoupling in an echoed cross-resonance gate are provided. According to an embodiment, a computer-implemented method can comprise receiving, by a system operatively coupled to a processor, both a cross-resonance pulse and a decoupling pulse at a target qubit. The cross-resonance pulse propagates to the target qubit via a control qubit. The computer-implemented method can further comprise receiving, by the system, a state inversion pulse at the control qubit. The computer-implemented method can further comprise receiving, by the system, both a phase-inverted cross-resonance pulse and a phase-inverted decoupling pulse at the target qubit. The phase-inverted cross-resonance pulse propagates to the target qubit via the control qubit.

The application relates to a seed laser focusing and delaying device and method of a free electron laser, the free electron laser comprising an electron beam generating device, a first modulation section, a first dispersion section, a second modulation section, a second dispersion section and a radiation section, the seed laser focusing and delaying device being integrated in a vacuum chamber of the first dispersion section, the seed laser focusing and delaying device comprising a delay plate, a first lens and a second lens, the delay plate being used for time matching of an optical delay amount of the seed laser and an electron beam delay amount of the first dispersion section, and the first lens and the second lens being used for spatial matching of the seed laser and the electron beam in the second modulation section.

In one example in accordance with the present disclosure, a printhead cap system is described. The printhead cap system includes a cap having an elastomer seal to surround a printhead die on a print cartridge. The printhead cap system also includes a variable force capping station to retain the cap. The variable force capping station is to move the cap to 1) a first position wherein the cap exerts a first force on a substrate on which the printhead die is disposed and 2) a second position wherein the cap exerts a second force on the substrate. In an example, the second force is greater than the first force. The printhead cap system also includes a control system to raise the cap from an uncapped position through the first position and the second position.

The application provides a method for undulator correction and orbit collimation of a free electron laser device, comprising: providing an experimental device; observing spectral characteristics of spontaneous radiation of a single undulator unit by using a spectrometer; decoupling and correcting an electron beam orbit and an undulator parameter of the single undulator unit based on the observed spectral characteristics, taking a central wavelength of the radiation as a core criterion to obtain an optimal working point; staggering the current undulator unit, adding a next undulator unit, and repeating the correction step until all the undulator units are corrected; and restoring all the undulator units to the optimal working point so that the free electron laser device outputs a required free electron laser. The method of the application separately corrects each undulator, takes the central wavelength position of the radiation of a single undulator as a core criterion, is suitable for a free electron laser device in a soft X-ray wave band, and does not depend on complete spot imaging.

The diaphragm type water-cooling vacuum differential mechanism is characterized in that an observation window is fixedly mounted at the upstream of a differential diaphragm, a camera is assembled on one side, far away from the differential diaphragm, of the observation window, and the observation window and the camera jointly form the monitoring system for monitoring the state of a differential hole; the water-cooling copper seat is a main body of the differential diaphragm; the thermocouple is inserted into the water-cooling copper seat of the differential diaphragm; a sealed cooling water path is arranged on the radial outer side of the water-cooling copper seat and is connected with an external cooling water circulation system to realize cooling water circulation; cylindrical grooves are respectively formed in the front end and the rear end; boron carbide is mounted in a cylindrical groove in the front end of the water-cooling copper seat; and the differential hole and the silicon carbide sheet are mounted in a cylindrical groove at the rear end of the water-cooling copper seat together after being attached. The vacuum differential mechanism is simple in structure and high in integration degree, thermal protection and monitoring functions can be achieved in a small space, the vacuum transition function can be stably achieved, and the operation stability and maintenance efficiency of light beam lines are effectively improved.

This invention discloses a device and method for generating a 100-femtosecond pulse-length free-electron laser based on electron beam cutting. The device includes: an electron beam generating device, an electron beam accelerating device, a beam focusing device, an electron beam cutting device, a free-electron laser generating device, an electron beam pulse length measuring device, and a free-electron laser measuring device. This invention can cut an electron beam into a 100-femtosecond electron beam using the electron beam cutting device, thereby obtaining a 100-femtosecond pulse-length free-electron laser. This free-electron laser has good quality and can be used for experimental research on the 100-femtosecond timescale.

The application discloses a linear plasma laser double-amplifier and a light-splitting observation system thereof, and belongs to the technical field of laser observation. The laser double-amplifier comprises a reflecting device, a laser amplification system, a laser light-splitting system and a laser observation system. The laser light-splitting system is arranged at a position where laser light is emitted after the laser light passes through a laser amplification medium. The laser light is reflected by a reflecting mirror and then passes through the laser amplification medium again to be amplified. The laser light is reflected by a compound curved mirror and then forms a linear light spot on a back-illuminated CCD camera. The application solves the technical problems of the prior art, such as being limited by space, having poor laser intensity gain and being difficult to observe.

The invention provides a high-energy gamma source based on free electron laser inverse Compton scattering, comprising an electron accelerator system and an undulator system, the electron accelerator system is configured to generate a plurality of electron beam bunches and provide the electron beam bunches to the undulator system, the undulator system is configured to generate free electron laser by using a first electron beam bunch, and the undulator system is configured to generate free electron laser by using a second electron beam bunch. And gamma photons are generated through inverse Compton scattering between the second electron beam group and the free electron laser. Free electron laser generation and inverse Compton scattering processes are respectively completed in the same undulator by using multiple electron beam bunches, and the undulator system not only can meet the gain requirement of free electron laser, but also can provide an interaction area required by inverse Compton scattering. The limitation that a free electron laser device and a scattering interaction area need to be independently arranged is avoided, self-supply of the free electron laser light source and high integration and function multiplexing of the device are achieved, and a large number of gamma photons can be generated.

The application discloses a kind of ultra-high vacuum four-knife slits suitable for soft X-ray free electron laser beam collimation, characterized in that, including ultra-high vacuum cavity and the four-knife slit completely located in ultra-high vacuum cavity, after soft X-ray free electron laser pulse enters ultra-high vacuum cavity from the front CF100 flange of ultra-high vacuum cavity, from the rear CF100 flange of ultra-high vacuum cavity, wherein: four-knife slit includes vertical direction double-knife slit and horizontal direction double-knife slit, respectively, to form constraint from horizontal and vertical direction to X-ray free electron laser beam.The application has the characteristics of high precision, high reliability, compact, simple structure, can work in ultra-high vacuum environment, etc.

The invention discloses a light source device, a light source system and a water window wave band full-coherence free electron laser generation method. The device comprises a harmonic generation unit used for accessing an electron beam and seed laser and generating low-order harmonics; and the at least two stages of cascaded amplifier units are connected with the harmonic generation unit, and are used for accessing low-order harmonic radiation, generating coherent harmonic radiation and tuning the coherent harmonic laser into high-order harmonic radiation so as to obtain the water window wave band full-coherent free electron laser pulse. According to the invention, the multi-stage amplifier units are constructed at the rear stage of the harmonic generation unit, and each subsequent amplifier unit is configured to resonate on a higher harmonic output and radiated by the previous amplifier unit, so that the harmonic radiation of the previous stage is used as an effective seed of the next stage, and the step-by-step up-conversion of the frequency is realized; and converting the frequency of the coherent radiation to a target higher harmonic step by step to obtain the water window wave band full-coherent free electron laser.

Methods and apparatus reduce chucking abnormalities for electrostatic chucks by ensuring proper planarizing of ceramic surfaces of the electrostatic chuck. In some embodiments, a method for planarizing an upper ceramic surface of an electrostatic chuck assembly may comprise placing the electrostatic chuck assembly in a first planarizing apparatus, altering an upper ceramic surface of the electrostatic chuck assembly, and halting the altering of the upper ceramic surface of the electrostatic chuck assembly when an Sa parameter is less than approximately 0.1 microns, an Sdr parameter is less than approximately 2.5 percent, an Sz parameter is less than approximately 10 microns for any given area of approximately 10 mm2 of the upper ceramic surface, or a pit-porosity depth parameter of greater than 1 micron is less than approximately 0.1 percent of area of the upper ceramic surface.

The application relates to a method for generating laser-driven attosecond electron bunches. The method comprises the following steps: constructing a laser-driven attosecond electron bunch generation system; in the system, a left-handed circularly polarized Laguerre-Gaussian laser light source is vertically incident on the surface of a low-density plasma target; the left-handed circularly polarized Laguerre-Gaussian laser light source is turned on; through interaction between the left-handed circularly polarized Laguerre-Gaussian laser and the low-density plasma target, a bubble structure is obtained; the bubble structure is used for confining electrons, the left-handed circularly polarized Laguerre-Gaussian laser is used for pushing the electrons located at the front end of the bubble structure away from the low-density plasma target, and high-density and low-divergence-angle attosecond electron bunches are obtained.