4results about "Wave amplification devices" patented technology

This invention discloses a method for analyzing soft X-ray gain phenomena in trapped ions and the cavity type of the X-ray laser, mainly relating to the field of soft X-ray gain phenomena. The method includes: S1, calculating the small-signal gain coefficient α of the X-ray gain medium to obtain numerical information about the gain coefficient α; S2, the above calculation in S1 requires simulating ion source conditions, selecting different electron densities and incident electron energy points; S3, considering the differences between the ion source and the plasma environment, calculating the small-signal gain coefficient at the center frequency; and S4, analyzing the obtained data. The beneficial effects of this invention are: through the X-ray resonant cavity structure, the output beam can achieve high coherence and good beam quality similar to conventional lasers. It supports high repetition rates and even continuous wave operation, and through continuous collisional excitation and ion reuse in ultra-high vacuum, it eliminates the dependence on driving lasers and target materials, thereby improving peak gain.

The application relates to a seed laser focusing and delaying device and method of a free electron laser, the free electron laser comprising an electron beam generating device, a first modulation section, a first dispersion section, a second modulation section, a second dispersion section and a radiation section, the seed laser focusing and delaying device being integrated in a vacuum chamber of the first dispersion section, the seed laser focusing and delaying device comprising a delay plate, a first lens and a second lens, the delay plate being used for time matching of an optical delay amount of the seed laser and an electron beam delay amount of the first dispersion section, and the first lens and the second lens being used for spatial matching of the seed laser and the electron beam in the second modulation section.

The application provides a method for undulator correction and orbit collimation of a free electron laser device, comprising: providing an experimental device; observing spectral characteristics of spontaneous radiation of a single undulator unit by using a spectrometer; decoupling and correcting an electron beam orbit and an undulator parameter of the single undulator unit based on the observed spectral characteristics, taking a central wavelength of the radiation as a core criterion to obtain an optimal working point; staggering the current undulator unit, adding a next undulator unit, and repeating the correction step until all the undulator units are corrected; and restoring all the undulator units to the optimal working point so that the free electron laser device outputs a required free electron laser. The method of the application separately corrects each undulator, takes the central wavelength position of the radiation of a single undulator as a core criterion, is suitable for a free electron laser device in a soft X-ray wave band, and does not depend on complete spot imaging.