516 results about "Laser intensity" patented technology

A ring laser gyroscope is described which includes a laser cavity configured to provide an optical laser path for a pair of counter-propagating laser beams, an optical sensor configured to receive a portion of the energy from the counter-propagating laser beams, and a unit configured to receive outputs from the optical sensor. The unit is configured to utilize the output to generate at least a residual path length control signal, a laser intensity monitor signal, and readout signals.

The bio-sample (e.g., a live cell) is labeled with a proper number of nanoparticles. Each nanoparticle is pre-co-doped with a controlled ratio of fluorophore donors and acceptors. Two laser pulses are applied to the bio-sample. The first laser pulse has a center wavelength near the peak of absorption spectrum of acceptors. The intensity of first laser pulse is adjusted such that FRET saturation occurs near the center of the focal spot. The focal spot of the first laser pulse is a diffraction-limited Airy disk that has the highest laser intensity in the center of the focal spot. The second laser has a center wavelength in the emission spectrum of acceptors and with a uniform intensity distribution throughout the focal spot. The fluorescence emission from acceptors after two laser pulses is from an area that is smaller than the diffraction-limited focal spot. Hence, a higher than diffraction-limit resolution is achieved.

A method for performing quartz-enhanced photoacoustic spectroscopy of a gas, includes providing a light source configured to introduce a laser beam having at least one wavelength into the gas such said at least one molecule within in the gas is stimulated generating an acoustic signal, accumulating the acoustic signal in a resonant acoustic detector, generating a resonant absorption signal (SA) relative to the gas concentration by at least one tuning fork serving as resonant acoustic detector, generating additionally a resonant intensity signal (SI) proportional to the intensity of the laser beam travelling through the gas, and providing an output signal (SGC) from said absorption signal (SA) and said intensity signal (SI) being independent of the intensity of the light relative to the presence or concentration of the gas.

The combination of a rooftop optical element and a soft edge aperture stop, as well as the introduction of a negative spherical aberration in a positive focusing lens, improve working distance and depth of focus in both moving beam and imaging readers for electro-optically reading indicia such as bar code symbols, especially for close-in symbols, and moreover tend to reduce undesirable light intensity modulation in the beam profile thereby improving reader performance.

A new technique and Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures in semiconductor materials is disclosed. The Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures provides activation of the “Coulomb explosion” mechanism in a manner which does not invoke or require the conventional avalanche photoionization mechanism, but rather utilizes direct interband absorption to generate the Coulomb explosion threshold charge densities. This approach minimizes the laser intensity necessary for material removal and provides optimal machining quality. The technique generally comprises use of a femtosecond pulsed laser to rapidly evacuate electrons from a near surface region of a semiconductor or dielectric structure, and wherein the wavelength of the laser beam is chosen such that interband optical absorption dominates the carrier production throughout the laser pulse. The further application of a strong electric field to the semiconductor or dielectric structure provides enhancement of the absorption coefficient through a field induced redshift of the optical absorption. The use of this electric field controlled optical absorption is available in all semiconductor materials and allows precise control of the ablation rate. When used in conjunction with nanoscale semiconductor or dielectric structures, the application of a strong electric field provides for laser ablation on sub-micron lateral scales.