681 results about "Photonic Chip" patented technology

Embodiments herein describe attaching (or bonding) alignment parts to a photonic die so that these alignment parts can then be used to passively align a FAU to the photonic die. In one embodiment, the alignment part (or parts) is aligned to a photonic die using a mounting FAU. The mounting FAU (along with the mated alignment parts) can then be actively aligned to the photonic die. When aligned, the alignment parts can be bonded (e.g., using cured epoxy) to the photonic die. The mounting FAU can then be lifted off, leaving the alignment parts attached to the photonic die. Later, a final product FAU (which may have a different shape than the mounting FAU) can then be passively aligned to the photonic die using the previously mounted alignment part or parts.

The invention provides an on-chip all-optical switching network device, a semiconductor device and a manufacturing method thereof. The on-chip all-optical switching network device comprises: a photonic chip formed with at least two photonic integrated circuit sub-chips optically interconnected with each other; the at least two optical switching control analog electric chips are respectively arranged on the at least two photon integrated circuit sub-chips; each photon integrated circuit sub-chip is internally provided with at least one on-chip optical switch, at least two communication nodes suitable for communicating with an external device, and a plurality of first type optical waveguides used for connecting the on-chip optical switch and the communication nodes; on the photon chip, communication between any two communication nodes is realized through at least one on-chip optical switch. According to the invention, through the plurality of on-chip optical switches, a series of digital electric chips can carry out parallel processing on information at the same time, and the requirements of an artificial intelligence algorithm on computing power and bandwidth can be better met.

The present invention relates to the field of semiconductor technology, and particularly relates to an optoelectronic chip packaging structure, comprising: a substrate, on the upper surface of which a signal transmission layer is provided, and on the signal transmission layer a signal processing layer is provided; the signal transmission layer includes: a first electrical chip, which has a first surface and a second surface, and the first surface faces the substrate, and the second surface faces the signal processing layer; the signal processing layer includes: a signal conversion area and a data storage area; a photonic chip is correspondingly arranged in the signal conversion area, and the photonic chip includes: N*M photon computing units, and each photon computing unit includes: an optical waveguide layer, and a modulation layer located on the optical waveguide layer, and the modulation layer is a phase change material layer or the modulation layer includes a phase change material layer; a second electrical chip is correspondingly arranged in the data storage area, which is used for receiving and storing calculation data. The present invention solves the problems of high preparation difficulty and poor heat dissipation performance of the existing packaging structure.

The invention relates to the technical field of semiconductor device packaging, in particular to a packaging structure, a packaging test method and a packaging test system of a large-scale photon chip. The upper surface of the substrate is connected with a chip layer through a first bonding structure, the chip layer comprises a plurality of optical chips, adjacent first and second side edges of the optical chips are relatively parallel to corresponding side edges of the other two adjacent optical chips, and a first gluing area is formed by filling a gluing material between the two oppositely arranged side edges; the outward side edge of the photon chip is bonded with a bonding material which extends to form a second bonding area, and the silicon adapter plate is arranged corresponding to the first connecting area of the optical chip; and a first wiring layer is arranged between the lower surface of the silicon adapter plate and the cementing layer. The splicing structure provided by the invention can reduce the preparation difficulty of large-scale optical chips.

The invention discloses a low-power-consumption multiple-input-multiple-output thermo-optical switch chip which comprises N optical input ports, an N * N optical beam splitter, N spiral waveguide thermo-optical phase shifters, an N * N optical beam combiner and N optical output ports. The N * N light beam splitter and the N * N light beam combiner adopt the same design structure and comprise N single-mode input / output waveguides, N width gradient waveguide transition areas (taper areas) and a multi-mode waveguide area, and each single-mode input and output waveguide is connected to the multi-mode waveguide area through the width gradient waveguide transition area. The spiral waveguide thermo-optic phase shifter comprises two spiral waveguides with different sizes, an S bend with a gradually-changed width and a circular heating electrode. The transmission path of light in the chip can be changed by adjusting the spiral waveguide thermo-optical phase shifter, and the function of optical switch switching is achieved. The invention has the advantages of high integration level, high expandability and low power consumption, and can be used in the field of integrated photon chips.

Structures for a photonics chip that include a photonic component and methods of forming such structures. The structure may comprise a photodetector on a substrate and a waveguide core. The photodetector includes a light-absorbing layer having a longitudinal axis, a first sidewall, and a second sidewall adjoined to the first sidewall at an interior angle. The first sidewall is slanted relative to the longitudinal axis, and the second sidewall is oriented transverse to the longitudinal axis. The waveguide core includes a tapered section adjacent to the first sidewall and the second sidewall of the light-absorbing layer.

A cryogenic structure can include a cryogenic chamber that houses a plurality of circuits that operate and cryogenic temperatures, and a room temperature portion that houses a plurality of circuits that operate at non-cryogenic temperatures. The circuits can include computer chips, such as electrical or photonic chips, that are housed on movable structures that insertable into the cryogenic structure.

The present invention provides a semiconductor apparatus achieving interconnection by using an on-chip all-optical switching network module and a manufacturing method therefor. The semiconductor apparatus comprises: a circuit board, which has a plurality of electrical connection paths; an on-chip all-optical switching network module, which is disposed on the circuit board, the on-chip all-optical switching network module comprising a photonic chip and a plurality of analog electrical chips for transceiving which are arranged above the photonic chip, the photonic chip comprising a plurality of communication nodes, a plurality of optical connection paths, and at least one on-chip optical switch which are in corresponding communication connection with the plurality of analog electrical chips for transceiving, and the on-chip optical switch being configured to alter the connection topology among the plurality of communication nodes; and a plurality of computing modules, which are arranged on the circuit board and, by means of the electrical connection paths on the circuit board, are in corresponding communication connection with the plurality of analog electrical chips for transceiving of the on-chip all-optical switching network module, so that the connection topology among the plurality of computing modules can be altered by the on-chip optical switch.

The invention provides a light beam scanning device of an integrated photonics chip and a test method. The light beam scanning device of the integrated photonics chip comprises a chip sample table, a chip sample table base, a light beam receiver connected with a lens cone and a horizontally arranged turntable base, the lens barrel is arranged above the turntable base, and a diaphragm adjusting structure and at least four lens groups are arranged in the lens barrel; the central point of the chip sample table base is overlapped with the central point of the turntable base, the chip sample table base is positioned above the turntable base, and the chip sample table is vertically arranged at the central point of the chip sample table base. Through switching of different lens groups in the lens cone, measurement of far and near fields of the to-be-tested chip is realized by using the same lens cone, the lens cone is arranged on the turntable base, and the test angle range can be adjusted according to specific test requirements so that various chip test requirements can be met.

The invention provides a miniaturized coherent laser wind speed remote measuring instrument and an assembling method thereof.The miniaturized coherent laser wind speed remote measuring instrument comprises an integrated optical module, an optical driving module, a master control processing module and an amplifier, and the integrated optical module comprises a seed laser, a semiconductor optical amplifier and an optical chip; the optical chip adopts a laser radar photon chip and comprises a transmitting link and a receiving link, the transmitting link comprises a beam splitter and a pulse modulator, and an optical mixer and a balance detector are integrated on the receiving link; the integrated optical module is packaged through a photoelectric hybrid packaging technology; and the main control processing module is a high-speed signal acquisition processing module. Through high-density photoelectric hybrid integration, the coherent laser wind speed telemeter is small in size and light in weight, the weight does not exceed 2 kg, and long-distance detection can be guaranteed.

The invention discloses a low-repetition-frequency spiral microcavity structure and a design method, and belongs to the field of silicon-based integrated photon chips. The low-repetition-frequency spiral microcavity structure comprises a first spiral bent waveguide, a second spiral bent waveguide, an internal connection bent waveguide, an external connection bent waveguide and a bus waveguide. The curvature radius of each point of the internal connection bending waveguide changes along with the length and meets the Euler spiral equation, and the internal connection bending waveguide is used for connecting the starting points of the first spiral bending waveguide and the second spiral bending waveguide. The external connection bending waveguide is used for connecting the end points of the first spiral bending waveguide and the second spiral bending waveguide. The first spiral bent waveguide, the second spiral bent waveguide, the internal connection bent waveguide and the external connection bent waveguide form a closed spiral annular waveguide. A light beam transmitted in the bus waveguide is coupled into the spiral annular waveguide. The invention further discloses a design method of the low-repetition-frequency spiral microcavity structure. According to the invention, loss caused by high-order mode crosstalk and mode mismatch can be reduced, and the area utilization rate of a chip is improved.

A photonic assembly, a laser setup having the photonic assembly and a method for performing frequency-modulated continuous-wave light detection and ranging using the laser setup are disclosed. The photonic assembly has an active photonic chip, a photonic modulator chip, and a tuning arrangement having a modulation element having a thickness of 10 micrometers or less. The active photonic chip and the photonic modulator chip are optically coupled such, that injection radiation at an optical feedback wavelength is generated, which defines at least one optical lasing wavelength at which the optical radiation is emitted by the active photonic chip. The modulation element is arranged such, that an actuation of the modulation element tunes the optical feedback wavelength via the Pockels effect, such, that a tuning of the optical feedback wavelength entails a tuning of the optical lasing wavelength.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes an optical interposer having optical waveguides; a plurality of chip stacks disposed over the optical interposer, each of the plurality of chip stacks including a first photonic IC chip and a memory chip over the first photonic IC chip; and a plurality of first laser source chips disposed adjacent to the plurality of chip stacks, respectively, wherein the optical waveguides in the optical interposer are configured as an optical interconnect structure to couple with the memory chip through the first photonic IC chip.

The invention provides a packaging structure, an optical module and an optical system, the packaging structure comprises an optical fiber unit and a chip unit, the chip unit comprises a photon chip and a chip cover plate, the photon chip is buckled with the chip cover plate, a spot size converter is arranged in the photon chip, and the spot size converter is composed of a cantilever beam waveguide and a first groove; the optical fiber unit comprises an optical fiber, a bottom plate and an optical fiber cover plate bottom plate; the waveguide is coupled with the optical fiber; wherein a first bonding part is arranged between the chip cover plate and the bottom plate, and a second bonding part is arranged between the photon chip and the optical fiber cover plate; or a first bonding part is arranged between the chip cover plate and the optical fiber cover plate, and a second bonding part is arranged between the photon chip and the bottom plate. In the packaging structure, a chip cover plate is arranged on a photon chip to form a chip unit, so that the bonding area between the chip unit and an optical fiber array is increased, the mechanical stability of the packaging structure is improved, and alignment of waveguides in the photon chip and optical fibers in the optical fiber array is realized.

A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

A co-packaged electro-optical module includes: a first planar light circuit (PLC) block; a silicon photonics chip electrically coupled to one or more chips; a splitter embedded in the first PLC block and to receive laser light from an optical fiber, to split the laser light into two portions, and to provide respective portions of the laser light to two planar waveguides; a planar surface of the silicon photonics chip to receive the portions of the laser light from the two planar waveguides in a direction perpendicular to the planar surface; modulators embedded in the silicon photonics chip and to modulate the portions of the laser light; a side edge of the silicon photonics chip extending perpendicular to the planar surface and to output the modulated portions of the laser light; and a second PLC block coupled to the side edge and to transmit the modulated portions of the laser light.

The invention provides a packaging structure, an optical module and an optical system. The packaging structure comprises a photon chip, an optical fiber array and a substrate. Wherein the photon chip is internally provided with a spot size converter, and the spot size converter is composed of a cantilever beam waveguide and a first groove; the optical fiber array comprises optical fibers, a bottom plate and a cover plate, the bottom plate comprises a second groove, the second groove is used for accommodating the optical fibers, and the cover plate is buckled with the bottom plate; wherein the photon chip is arranged on the upper surface of the substrate, the bottom plate or the cover plate is arranged on the upper surface of the substrate, and the cantilever beam waveguide is in coupling connection with the optical fiber. In the packaging structure, the photon chip and the optical fiber array are arranged on the upper surface of the substrate together, and an additional supporting piece is avoided, so that the mechanical stability of the packaging structure can be ensured, the change of stress near the cantilever beam waveguide caused by temperature change, displacement, external force application and the like in the packaging structure is reduced, and low-stress packaging is realized.

The invention relates to a 3 [mu] m SOI process integration method for an on-chip beam forming and wavelength division multiplexing system. The method comprises the steps of silicon waveguide etching, PN ion implantation, germanium-silicon epitaxy, germanium-silicon waveguide etching, metal layer growth and the like. In order to solve the problem that the silicon PN doping annealing temperature is higher than the germanium-silicon PN doping annealing temperature, the germanium-silicon epitaxial etching postposition technological process is developed, and the non-selective epitaxy and reverse etching modes are used, so that the problem that a wafer is uneven after silicon etching doping is solved. The method has extremely high application value in large-scale silicon photon integration application, and can be used for manufacturing complex active photon chips integrated with modulators, detectors and the like.

A semiconductor package includes a package substrate, an electronic integrated circuit chip mounted on the package substrate, a first photonic integrated circuit chip mounted on the electronic integrated circuit chip, the first photonic integrated circuit chip including a first groove recessed from a top surface and a side surface of the first photonic integrated circuit chip, and a second photonic integrated circuit chip mounted on the first photonic integrated circuit chip, the second photonic integrated circuit chip including a second groove recessed from a top surface and a side surface of the second photonic integrated circuit chip, wherein the second photonic integrated circuit chip is offset-stacked on the first photonic integrated circuit chip, wherein at least a portion of a bottom surface of the first groove of the first photonic integrated circuit chip is exposed to the outside.

The invention relates to the technical field of semiconductor packaging, in particular to a hybrid packaging structure and method of a photoelectric chip and a testing method and system of the photoelectric chip. The packaging structure comprises a first substrate; a reinforced connecting layer is arranged on the upper surface of the first substrate; the reinforced connection layer comprises a silicon adapter plate, a first reinforced layer and a second reinforced layer are arranged on the silicon adapter plate, and an electronic chip is arranged on the upper surface of the second reinforced layer; the third reinforcing layer at least can cover the exposed surface area of the first reinforcing layer, the exposed surface area of the second reinforcing layer and the side surface of the electronic chip; and a photon chip is arranged on the upper surface of the third reinforcing layer corresponding to the first reinforcing layer. The hybrid packaging scheme realized based on the reinforced connection layer can be applied to wafer-level batch processing, so that the compatibility with an advanced packaging process of an electronic chip and large-scale mass production can be realized.

The invention belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a full-on-chip integrated photon chip gyroscope. The active devices integrated on the silicon-based heterogeneous integrated chip comprise an SLD light source, a thin film lithium niobate modulator and a detector; the passive device integrated on the silicon-based heterogeneous integrated chip comprises an isolator, a one-to-two coupler, a polarizer, a one-to-two coupler and an on-chip waveguide ring; the silicon-based heterogeneous integrated chip is also integrated with a spot size converter, a bending waveguide, a bending waveguide and a spot size converter.

Laser-scanning systems for augmented reality glasses displays and LiDAR (light detection and ranging) use photonic integrated circuits to generate multiple collimated (or low-divergence) modulated laser beams. Laser light is guided on the photonic chip, expanded, and emitted from the surface of the chip (using grating coupler devices) as one or more large-diameter (e.g., millimeter-scale), collimated or low-divergence beams. These gratings may be integrated onto movable microelectromechanical systems (MEMS) plates to steer the beam along two angular axes. Alternatively, the beam(s) from the grating(s) may be steered by a separate MEMS mirror integrated onto the photonic chip or on another chip. Such systems enable multi-beam laser scanning systems without collimation lenses, reducing the size and packaging complexity of high-performance laser scanning systems for augmented reality glasses and LiDAR.

An optical source is described. This optical source may include a semiconductor laser chip and a silicon-photonics chip that provide an optical cavity. The semiconductor laser chip may provide gain at multiple lasing wavelengths in a band of wavelengths. Moreover, the silicon-photonics chip may adjust a size of an optical signal proximate to an interface between the semiconductor laser chip and the silicon-photonics chip. Furthermore, by adjusting a phase of a phase shifter and resonance frequencies of a micro-ring resonator in the silicon-photonics chip, a center frequency of a passband of the micro-ring resonator may be matched to a non-zero integer multiple of a cavity-mode spacing. This may allow the optical source to mode-lock the lasing wavelengths of the optical source by suppressing unwanted lasing wavelengths and re-enforcing the lasing wavelengths. In some embodiments, a free-spectral range of the optical source may be between 100 GHz and 800 GHz.

The invention relates to a DR4 silicon optical chip, which is characterized in that one side surface of a chip main body is an optical surface inclined by 8 + / -0.1 degrees, four output waveguides which are perpendicular to and intersect with the optical surface are arranged on the chip main body side by side, and an input waveguide which intersects with the optical surface is arranged on the chip main body. According to the 400G silicon optical engine, the end face of a multi-channel optical fiber array is a 0-degree face, the 0-degree face of the multi-channel optical fiber array is attached to the optical face of a DR4 silicon optical chip, and the multi-channel optical fiber array is coupled with four output waveguides on the DR4 silicon optical chip. The beneficial effects are that the DR4 silicon optical chip is provided with an optical surface with an inclination of 8 + / -0.1 degree, and the output waveguide is perpendicular to and intersects with the optical surface, so when the DR4 silicon optical chip is applied to a 400G silicon optical engine, the end surface of the selected multichannel optical fiber array can be a 0-degree surface, the grinding efficiency of the multichannel optical fiber array is effectively improved, the angle error is reduced, and the grinding precision is improved. The coupling efficiency is improved.

Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector, a first waveguide core coupled to the photodetector, and a second waveguide core coupled to the photodetector. The structure further comprises a third waveguide core including a section disposed laterally between a section of the first waveguide core and a section of the second waveguide core.

The invention discloses a high-speed reliable communication device and method based on a microwave photon technology, and belongs to the technical field of microwave photons and optical communication, and the high-speed reliable communication device comprises a microwave photon signal transmitter and a microwave photon signal receiver, the microwave photon signal transmitter comprises an analog-to-digital conversion module, a data compiler and a transmitting antenna; the microwave photon signal receiver comprises a receiving antenna, an electro-optical modulator, an optical amplifier, a microwave photon chip module, an optical detector and a data demodulation module. The device can meet the requirement of high-speed communication, the coded signal has the characteristic of interception resistance, and the device has the characteristics of simple structure, convenience in design and easiness in integration.

Embodiments of this application provide a laser beam machining method targeted at chalcogenide materials and an integrated photonic device, relating to the technical fields of integrated photonic chip machining. The laser beam machining method targeted at chalcogenide materials includes: acquiring a dielectric substrate with a preset size, and cleaning the dielectric substrate; preparing a uniform and dense sulfide film on a surface of the dielectric substrate; obtaining a laser spot with a preset energy distribution pattern according to a preset machining pattern; generating laser spot scanning parameters according to the preset machining pattern; and carrying out etching-free laser oxidation machining on the sulfide film through the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device. The laser beam machining method targeted at chalcogenide materials can significantly simplify the machining flow of integrated photonic chips and improve the machining efficiency of photonic chips.

The invention provides a coupling system for an on-chip light source and a photon chip. The coupling system comprises an input light source, a collimating lens, a focusing lens, a reflecting prism and an on-chip grating which are sequentially arranged in the direction of a light path, and an optical waveguide located on the side face of the on-chip grating. The collimating lens is used for primarily shaping emergent light of an input light source into a collimated light beam, the focusing lens is used for focusing the collimated light beam to the on-chip grating, and the collimating lens and the focusing lens are both aspheric plano-convex lenses. According to the system, non-uniformity caused by a large divergence angle of the semiconductor laser is effectively corrected through the aspheric micro lens, output of approximately parallel light beams is achieved, the light beams are accurately focused to the photon chip grating through the aspheric focusing lens subsequently, the coupling efficiency of light energy is greatly improved, and compared with two cylindrical lenses in the prior art, the coupling efficiency of light energy is greatly improved. The design of the focusing lens and the reflector is added, so that the number of optical elements is reduced, and error accumulation is reduced.

The present invention discloses a microwave topological photonic crystal metasurface antenna, which belongs to the field of communication technology. The present invention adopts a layered structure similar to a patch antenna, including a ground plate, a dielectric layer, a topological photonic crystal, a rectangular metal frame, and a microstrip feeder arranged from bottom to top. The topological photonic crystal is arranged above the dielectric layer, the rectangular metal frame is coated on the periphery of the topological photonic crystal, and the microstrip feeder is connected to the rectangular metal frame. The present invention can achieve multi-band characteristics and extended bandwidth. In addition, most of the electromagnetic waves propagated by the antenna within the band gap range are suppressed, and only electromagnetic waves of the angular state frequency can propagate, with smaller return loss, and the topological angular state can achieve unidirectional radiation, with better directivity at high frequencies. As a result, the antenna performance is greatly improved, which is very suitable for on-chip optical interconnection and photonic chip integration, and meets the needs of 5G / 6G communications, quantum computing, etc. for miniaturized devices.

A semiconductor laser and a photonic nonlinear circuit chip are integrated together. The nonlinear circuit chip may include a nonlinear waveguide configured or controlled to enable sum-frequency generation, difference-frequency generation, second-harmonic generation, parametric amplification, or other nonlinear processes. Coupling between the semiconductor laser and the nonlinear circuit may be optimized by mode-matching, while back-reflections are minimized by diverting the reflections so that optical isolators are not needed. The integration of the semiconductor laser and the nonlinear photonic circuit chip enables nonlinear optical processing using a compact and scalable platform in a flexible manner that is compatible with different types of semiconductor lasers and different operation regimes. An additional input is provided so users can input an optical signal into the photonic chip for processing therein. In some examples, the photonic chip is configured with pump resonators, such as racetrack resonators. Method and device examples are described herein.