276 results about "Photonic Chip" patented technology

The invention provides a light beam scanning device of an integrated photonics chip and a test method. The light beam scanning device of the integrated photonics chip comprises a chip sample table, a chip sample table base, a light beam receiver connected with a lens cone and a horizontally arranged turntable base, the lens barrel is arranged above the turntable base, and a diaphragm adjusting structure and at least four lens groups are arranged in the lens barrel; the central point of the chip sample table base is overlapped with the central point of the turntable base, the chip sample table base is positioned above the turntable base, and the chip sample table is vertically arranged at the central point of the chip sample table base. Through switching of different lens groups in the lens cone, measurement of far and near fields of the to-be-tested chip is realized by using the same lens cone, the lens cone is arranged on the turntable base, and the test angle range can be adjusted according to specific test requirements so that various chip test requirements can be met.

Systems and methods described herein relate to fabricating photonic chip-to-chip couplings. In one embodiment, a system for fabricating a photonic chip-to-chip coupling bonds a substrate to first and second photonic chips. The system also generates, based on images of the bonded substrate and the first and second photonic chips captured by an imaging system, an initial optimum design for a waveguide within the substrate to optically couple the first and second photonic chips. The system also etches a first portion of the waveguide in accordance with the initial optimum design using a laser that polymerizes regions of the substrate. The system also monitors the etching of the first portion of the waveguide via the imaging system and generates an updated optimum design for a second portion of the waveguide that compensates for detected error in the first portion of the waveguide.

The invention discloses a self-reference three-phase polarization imaging system and method based on an integrated photon neural network, and the method comprises the steps: setting a fixed phase difference in a silicon-based photon chip to achieve three-phase projection and single-port reading, outputting a three-phase interference signal at the same time, obtaining all phase and polarization information in one-time imaging to achieve full-polarization measurement, and carrying out the single-port reading of the silicon-based photon chip; according to the invention, the effective resolution ratio is consistent with that of an original detection array, power and temperature drift is eliminated, single-frame acquisition has no time sequence error and motion artifact, a stable and compact single-port self-reference reading mode is realized through a three-phase interference measurement architecture constructed on a chip in combination with channel normalization and rotation correction, and complete Stokes parameters and polarization information can be measured. According to the system provided by the invention, the MZI is adopted, so that the phase bias can be flexibly adjusted, and different bandwidth requirements can be met by adjusting an interference path. The silicon-based photon platform has a broadband response characteristic and can cover a visible wave band, so that the device can keep stable interference performance in a communication wave band.

The present application provides a heterogeneously integrated photonic chip, a heterogeneous integration method, a system, and an optical communication device. The heterogeneously integrated photonic chip comprises a first wafer and a second wafer, wherein: the second wafer is integrated above the first wafer; the first wafer comprises a first substrate layer and an electro-optic material layer disposed on one side of the first substrate layer; and the second wafer comprises a silicon base layer arranged on the side of the electro-optic material layer away from the first substrate layer. In the present application, by integrating the second wafer above the first wafer, with the first wafer comprising an electro-optic material layer, and the second wafer comprising a silicon base layer, the integration of two heterogeneous materials, the electro-optic material layer and the silicon base layer, on a single chip is achieved. This heterogeneously integrated photonic chip has the advantage of high integration. Additionally, the electro-optic material layer can form a high-speed electro-optic modulator, and silicon materials have well-established device integration technologies in the semiconductor field. By integrating the electro-optic material layer and the silicon base layer in this heterogeneously integrated chip, the performance of the heterogeneously integrated chip can be improved.

The invention relates to the related technical field of silicon photon chips, in particular to a high-speed silicon optical engine method and device for a silicon optical module, and the method comprises the steps: obtaining basic technical parameters of an optical fiber connection product with the silicon optical module; the refractive index distribution and the waveguide section size of the silicon optical waveguide are configured, and a multi-mode waveguide array is constructed; an electro-optical modulator array is integrated in a multi-mode waveguide array, and the coupling efficiency of waveguides and optical fibers is adjusted in real time through dynamic impedance matching; meanwhile, the high-speed electric drive circuit is used for driving the electro-optical modulator array and optimizing rising edge characteristics / falling edge characteristics of signals, and power consumption adjustment is carried out on the high-speed electric drive circuit. The technical problem that the optical signal quality is reduced due to the fact that the silicon optical waveguide design mostly adopts fixed parameters and mode crosstalk is prone to occurring in a high-speed transmission scene is solved, and the technical effects that the waveguide refractive index is dynamically configured, the multi-mode waveguide array is constructed, the mode crosstalk is effectively reduced, the transmission loss is reduced, and the optical signal transmission quality is improved are achieved.

An electronic package is provided, in which an electronic module including a first electronic element and a second electronic element is disposed on a carrier structure embedded with a third electronic element, and the third electronic element is a photonic chip electrically connected to the electronic module. Therefore, with this configuration, it is beneficial to reduce a layout area of the carrier structure to meet the requirement of miniaturization.

Disclosed is devices and techniques for 3D LiDAR sensing without beam scanning with moving parts or 2D optical imaging based on the combination of a lens' position-to-angle conversion and the wavelength division multiplexing / demultiplexing (WDM) in the output probe light for LiDAR sensing. This 3D LiDAR sensing can be implemented on stacked photonic integrated chips to provide.

An optical engine device includes an electronic integrated circuit (EIC) chip, and a photonic chip on the EIC chip, where the PIC chip includes a first photonic chip sidewall, a photonic chip substrate having an inclined upper surface, and a reflective pattern on the inclined upper surface of the photonic chip substrate, and where at least a portion of the reflective pattern is horizontally spaced apart from the first photonic chip sidewall.

The application provides a wavelength division multiplexer and a silicon optical chip, which comprises a first unit and at least one second unit; the first unit is connected with each second unit through a first waveguide; an output port and a plurality of output ports are arranged on the same side of the first unit; the first unit and the plurality of second units are each provided with a wavelength interleaver; the wavelength interleaver comprises a homogeneous waveguide and a heterogeneous waveguide; the heterogeneous waveguide comprises a main body composed of a first material; a gap is arranged in the main body; the gap is filled with a second material; along the propagation direction of input light, the wavelength interleaver is provided with an input section, an input coupling section, a phase difference accumulation section, an output coupling section and an output section; the effective refractive index of the homogeneous waveguide and the effective refractive index of the heterogeneous waveguide in the phase difference accumulation section are different. The wavelength division multiplexer can be applied to the manufacture of optoelectronic devices, such as a silicon optical chip. The first unit and the second unit are in a folded layout, so that the layout of the wavelength division multiplexer on the chip is compact and modular.

The present application relates to the chip manufacturing technical field, specifically for the photonic chip multilayer overlay precision monitoring and calibration system based on image recognition, including: image acquisition module gathers super-resolution microscopic image, photoetching machine motion parameter, photoetching cavity environmental variable and overlay alignment data;Overlay alignment digital twin module constructs photoetching machine and wafer digital twin, combines chip layout and process parameters, simulates multilayer overlay deviation, exposure distortion and interlayer coupling effect through strict coupling wave analysis and rigid body kinematics algorithm;Overlay deviation intelligent analysis hub adopts YOLO-Transformer model, identifies deviation mode and locates deviation source;Visual calibration strategy generation unit constructs three-dimensional photoetching virtual scene, renders alignment and exposure process and generates calibration strategy;Self-adaptive alignment calibration unit predicts deviation trend according to calibration data, dynamically adjusts photoetching machine parameter. Thus, the problems of calibration inefficiency, insufficient precision and the like in the prior art are solved.

The invention discloses an optical nonlinear activator chip based on a graphene photoelectric device and a preparation method. Belongs to the technical field of photoelectric devices and optical signal processing. The chip comprises a detector optical path and a modulator optical path, a substrate is made of a standard SOI material, and the chip structurally comprises an optical coupling module, a waveguide, a graphene detector part and a graphene modulator part. The graphene detector and the modulator are integrated on the same chip, the detector is used for converting an input optical signal into a voltage signal, then the voltage signal is input into the modulator to modulate continuous light, and an optical signal after nonlinear conversion is output and used for a nonlinear activation unit of an optical neural network. Compared with a traditional nonlinear activator of a silicon-based integrated photon chip, the method gives full play to the advantages of excellent photoelectric property and easy integration of graphene, has the advantages of high integration level, high speed, low power consumption and the like, and has better compatibility with a silicon-based optoelectronic process.

A phased-array optoelectronic emitter includes a laser chip containing a flared laser source and a photonic chip containing phase shifters and elementary transmitters placed in N arms. The photonic chip includes a coupler that ensures optical coupling between the flared laser source and the arms, the coupler having a collection input placed facing the emission surface of the flared laser source and a transmission output comprising N rectilinear waveguides that are coupled to the N arms of the optoelectronic emitter and that are oriented so that their longitudinal axes are secant at a position located in a flared section of the laser source on an optical axis of the laser source.

The invention relates to an electronic device for analyzing (1) an analyte (2) present in a fluid, comprising: - a sensor (10) having a photonic chip (12) comprising a light guide (13) in which are arranged receptors (14) capable of interacting with the analyte present in the fluid, the interaction causing a change in local properties, and - a sensor support (50); - a closure element (60); - a transducer for changing local properties capable of converting the change in local properties into an electronic signal expressing the change in local properties, this transducer comprising: - a light source (130); - an optical detector (131), the light guide comprising an interference arm (134) in which a resulting light beam is guided, characterized in that the luminous power of the resulting light beam guided in the interference arm is greater than or equal to 0.2 µW. Abstract figure: Figure 1

An optical module assembly includes a printed circuit board, a substrate mounted on the printed circuit board, an emitting chip mounted on the substrate, a silicon photonic chip mounted on the substrate, an optical fiber connected to the silicon photonic chip to transmit an optical signal, a daughter board mounted on the printed circuit board, and an electrical chip mounted on the daughter board. The optical fiber and the printed circuit board are spaced at a certain distance so as not to interfere with each other. An optical fiber connector including the optical module assembly is also disclosed.

The invention discloses a non-polishing low-loss coupling optical fiber array adaptive to a deep silicon etching photon chip, a deep silicon etching photon chip coupling assembly and a method, and belongs to the technical field of silicon photon integration. The device comprises an optical fiber array main body, a V-shaped groove substrate and a special-shaped cover plate, the special-shaped cover plate is attached to the upper surface of the V-shaped groove substrate, an avoiding groove is formed in the position, corresponding to a deep silicon etching area of the end face of the chip, of the special-shaped cover plate, and the depth of the avoiding groove is not smaller than the total height of a residual step on the end face of the chip and a deep groove protruding structure so as to eliminate mechanical interference. The tail end of the optical fiber is positioned in the V-shaped groove, and the light-emitting end face is parallel and tightly butted with the end face of the chip. The customized avoiding groove is integrated in the cover plate, direct, lossless and low-loss coupling of the optical fiber array and the deep silicon etching silicon optical chip with the composite three-dimensional morphology end face can be achieved without extending the optical fiber, removing a bottom cover or polishing the end face of the chip, the integrity of the end face of the chip is effectively protected, and the coupling precision and the device yield are improved.

The invention provides a micro-ring modulator and a silicon optical chip, the micro-ring modulator comprises an annular waveguide and a strip-shaped waveguide, and the annular waveguide is arranged at one side of the strip-shaped waveguide; the strip-shaped waveguide receives input light, the annular waveguide is coupled with the strip-shaped waveguide, the annular waveguide receives coupling input light of the strip-shaped waveguide, and the coupling input light is transmitted along a path of the annular waveguide; the annular waveguide is provided with a first part close to the strip-shaped waveguide and a second part far away from the strip-shaped waveguide, the first part has a first width, the second part has a second width, the first width is smaller than the second width, and the width of the annular waveguide is gradually increased from the first part to the second part. The silicon optical chip is applied to the micro-ring modulator, process errors can be resisted, and the performance stability of the micro-ring modulator is ensured.

An on-chip visible light signal detector based on the photoimpedance effect of polymer electrolyte belongs to the field of functional photonic chip technology. It consists of a substrate layer, a lower cladding layer, a lower metal layer, a polymer grooved layer, an ion-polymer electrolyte core layer, and an upper metal layer, and the device is a MIM structure. The ion-polymer electrolyte core layer has an inverted ridge waveguide structure. The polymer electrolyte material PIL / PBI exhibits a photoimpedance effect; that is, when the detected optical signal propagates in the inverted ridge waveguide, it interacts with the polymer electrolyte, converting light energy into heat energy, increasing the concentration and activity of free ions inside the PIL / PBI, thereby changing its impedance value. This invention solves the problems of single detection dimension and insufficient responsivity in existing on-chip visible light detectors, realizing the detection of three dimensions of optical signal: polarization state, wavelength, and power. It has advantages such as fast response speed, simple fabrication process, low cost, small size, and high integrability.

A photonic platform (e.g., a photonic chip) is described which can include integrated components such as laser cavities, modulators, optical multiplexers / demultiplexers, photodiodes, and supercontinuum generators that are connected using optical waveguides and splitters / combiners to perform two-way optical time transfer. Integrating various combinations of these optical components onto the same photonic chip (e.g., photonic integrated circuit (PIC)) can reduce the size of the device, reduce noise, improve assembly by reducing the amount of fiber connections, and the like. A digital processing system is also described for performing two-way optical time transfer.

The application relates to the technical field of photonic integrated chips, and relates to a monolithic integrated reconfigurable silicon photon platform based on a phase change film and a preparation method. The application comprises the following steps: an SOI wafer substrate; a core waveguide layer: a silicon waveguide is formed by etching on the SOI wafer, and is used for transmission and waveguide of an optical signal; a phase change material layer: a phase change regulation area which is continuously distributed in the whole device is formed by covering the surface of the core waveguide layer in a monolithic conformal integration mode; a large range of regulation of the optical signal is realized by selective crystallization / decrystallization in the phase change regulation area; a series of pixel-level crystallization units are continuously crystallized on the phase change material layer on the silicon waveguide, so that hierarchical regulation of an optical phase is realized; and a protective layer. The application monolithically and conformally integrates a phase change material layer on a standard silicon photon chip, a series of pixel-level and reversible phase change operations are continuously performed on the phase change material layer, and therefore the accuracy of multistage phase regulation and the regulation range are effectively improved.

The application belongs to the chip packaging technical field, and particularly relates to a running control method based on a heterogeneous optoelectronic chip, steps of which are as follows: S101, obtaining a task quantity of a to-be-calculated task; and judging whether the task quantity is greater than a set first calculation threshold; when the judgment result of step S101 is yes, then step S102 is executed, that is, a type one photonic chip is recommended for the to-be-calculated task to execute calculation; when the judgment result of step S101 is no, then step S103 is executed, that is, a recommended calculation time consumption of the to-be-calculated task is obtained, and whether the recommended calculation time consumption of the to-be-calculated task is less than a set time length is judged; when the judgment result of step S103 is yes, then step S104 is executed, that is, a type two photonic chip is recommended for the to-be-calculated task to execute calculation; when the judgment result of step S103 is no, then step S102 is executed. The control method can realize flexible switching and stable high-speed running of the optoelectronic chip in an extreme environment.

The invention discloses an optical interface structure of an integrated photonic chip for a fiber-optic gyroscope and an optical coupling method, and belongs to the technical field of integrated optics and optical fiber sensing. All input and output ports of the integrated photon chip are arranged on a coupling end face on the same side of the chip, the ports comprise at least two signal ports and two auxiliary ports, the signal ports are used for connecting tail fibers of polarization maintaining fiber rings of all measuring axes of the fiber-optic gyroscope, and the auxiliary ports are connected with a through type auxiliary coupling optical channel in the chip; each port is integrated with a spot size adaptation unit, and the spot size adaptation unit is used for matching the spot size of the polarization maintaining optical fiber and the chip waveguide; the integrated photon chip realizes single-side end face alignment coupling with the multi-channel polarization-maintaining optical fiber array through the coupling end face, tail fibers of polarization-maintaining optical fiber rings of all measuring axes of the optical fiber gyroscope are directly solidified in the multi-channel polarization-maintaining optical fiber array, a head channel and a tail channel of the multi-channel polarization-maintaining optical fiber array are aligned with two auxiliary ports of the chip respectively, and no extra welding link is needed. According to the invention, the problems of dispersed channel-by-channel coupling of optical interfaces, complex alignment of two-side FAs, large dual-link coupling loss, serious polarization cross coupling and uncontrollable coupling quality are solved, the overall precision and environmental stability of the fiber-optic gyroscope are remarkably improved, the method is suitable for various fiber-optic gyroscopes with single axes, multiple axes and the like, and the system integration level and the assembly consistency are remarkably improved.

This invention relates to an end-face coupling structure for a low-loss silicon photonic chip, comprising a silicon substrate, a laser mounting region on the silicon substrate, a buried oxide layer on one side of the laser mounting region and on the silicon substrate, a shallow etched region on the buried oxide layer, and a beveled end face etched on the cross section formed by the buried oxide layer and the shallow etched region. The beveled end face is used to reduce reflection loss. A ridge waveguide facing the laser mounting region is disposed on the shallow etched region, and the incident end of the ridge waveguide is located at the beveled end face. This invention can achieve high coupling efficiency and alignment tolerance.

The invention discloses a topology protection Hong-Ou-Mandel interferometer based on a pi phase regulation and control grating, and belongs to the technical field of integrated photonics and quantum optics. The interferometer comprises a first waveguide and a second waveguide which are arranged side by side on a silicon dioxide substrate, and each waveguide comprises an input waveguide, a grating waveguide and an output waveguide. The two grating waveguides are provided with periodic notch grooves, and the positions of the notch grooves are symmetrically distributed about a waveguide center connecting line, so that a pi coupling phase difference is introduced between coupling in the two waveguides. The TE-TM coupling strength in the waveguides is enabled to be equal to the TE-TE coupling strength and the TM-TM coupling strength between the waveguides by adjusting the waveguide distance and the notch groove size, and the system enters a topological non-trivialness phase when delta phi is equal to pi, so that a compact topological boundary mode is formed. The structure provides an evolution path protected by topology for two-photon HOM interference, realizes interference visibility close to a theoretical limit, shows strong robustness for manufacturing errors and propagation distance changes, is obviously reduced in device size, and is suitable for high-density integrated quantum photon chips.

The invention relates to an integrated photonic chip (PIC) for generating at least one combined emission light, the integrated photonic chip (PIC) comprising at least two active combining devices (ACD1, ACD2) optically associated with a bank of lasers (LB) having different wavelengths, the bank being composed of at least two lasers (L1, L2) emitting a first emission light (l1, l2) and a second emission light (l'1, l'2) and configured on at least one optical output (OO) to combine the emission light received at its optical input to generate a combined emission light (l1+l'1, l2+l'2; l1+l2, l'1+l'2). The invention also relates to an optical component comprising such a photonic chip.

The invention provides a resonator and a photon chip, and the resonator comprises a micro-ring waveguide and a straight waveguide, the coupling region of the straight waveguide and the micro-ring waveguide is a coupling section, the straight waveguide and the micro-ring waveguide have the same waveguide structure at the coupling section, and the waveguide structure comprises a first waveguide arm and a second waveguide arm, a radiation groove is formed between the first waveguide arm and the second waveguide arm; a plurality of first grating grooves arranged along the extension direction of the radiation groove are formed in one side, facing the radiation groove, of the first waveguide arm; a plurality of second grating grooves arranged along the extension direction of the radiation groove are formed in one side, facing the radiation groove, of the second waveguide arm; and the first grating grooves are aligned with the second grating grooves one by one. The second waveguide arm and the first waveguide arm in the waveguide structure of the coupling section can form a sub-wavelength grating groove-shaped waveguide with a continuous outer boundary. Due to the fact that the outer boundary is continuous, mode disturbance and side wall scattering can be effectively restrained, and scattering loss of the resonator can be remarkably reduced.

Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector including a pad and a semiconductor layer on the pad. The structure further comprises a waveguiding structure including a first waveguide core, a second waveguide core, a slot between the first waveguide core and the second waveguide core, and a plurality of waveguide core segments. The waveguiding structure is adjoined to a side edge of the pad adjacent to the semiconductor layer. Each of the plurality of waveguide core segments includes a portion that is disposed in the slot.

The application discloses a kind of thermally induced deformation regulation and control silicon optical chip packaging methods, belong to semiconductor packaging and optoelectronic communication technical field.It includes: obtaining the packaging substrate including flexible compensation area, rigid fixed area and thermal isolation groove;Heating electrode array and double material strain layer are set in flexible compensation area, and temperature sensor is set in rigid fixed area;Silicon optical chip is fixed to the surface of rigid fixed area, and preset bias voltage is input to heating electrode array, so that flexible compensation area generates initial bending deformation state;In the initial bending deformation state, optical fiber assembly is solidified and connected to the end of flexible compensation area, and initial optical coupling link is constructed.The application obtains real-time temperature by temperature sensor, dynamically adjusts driving voltage to change the curvature of flexible compensation area, and drives optical fiber assembly to generate alignment displacement.Active thermal deformation feedback adjustment means is used, which can effectively offset the coupling offset caused by temperature drift and improve the stability of optical coupling link.

The invention discloses a photoelectric co-packaging structure and a forming method thereof, and the forming method comprises the steps: providing a photon chip which comprises a first surface and a second surface which are opposite, and the first surface is provided with a bonding pad and an optical coupling port located at one side of the bonding pad; forming a protective layer covering the optical coupling port, wherein the protective layer exposes the bonding pad; after the protection layer is formed, forming a first welding bump on the bonding pad; an initial packaging panel is provided, the initial packaging panel comprises a third surface and a fourth surface which are opposite to each other, an electronic chip is arranged in the initial packaging panel, the third surface of the initial packaging panel is provided with a first wiring layer, and the electronic chip is electrically connected with the first wiring layer; inversely mounting the photon chip on the first wiring layer, and welding the first welding bump with the first wiring layer; an optical interface device is installed on one side of the photon chip, and the optical interface device is right opposite to the optical coupling port; and after the optical interface device is installed, the protection layer is removed, and the optical coupling port is exposed. And the optical coupling port is prevented from being damaged and polluted in the whole packaging process.

The invention provides a silicon photonic gyroscope suitable for wide-temperature-range adaptive power control and a control method thereof. The silicon photonic gyroscope comprises an optical chip, an optical fiber loop and an integrated circuit, the optical chip comprises a light source, a coupler, a first detector, a second detector, a modulator and a thermistor; the integrated circuit comprises a half-wave voltage control module, a light source intelligent temperature control module, a driving temperature control module and a signal demodulation module; a thermistor is integrated on a silicon photon chip to measure the working temperature of the chip in real time, meanwhile, the magnitude and direction of TEC current are measured in real time to sense refrigeration / thermal power, the magnitude of the current TEC current is comprehensively designed according to the power derating level, and the driving power of a light source is precisely regulated and controlled by adopting an advanced intelligent algorithm; the temperature and the power consumption are considered to achieve the optimal control strategy of the optical chip, and the gyro output real-time compensation is performed in the signal demodulation module aiming at the current temperature and the driving current, so that the gyro output error caused by the dynamic temperature adjustment and the unsteady state of the driving current is avoided.