551 results about "Photonic Chip" patented technology

The present invention relates to the field of semiconductor technology, and particularly relates to an optoelectronic chip packaging structure, comprising: a substrate, on the upper surface of which a signal transmission layer is provided, and on the signal transmission layer a signal processing layer is provided; the signal transmission layer includes: a first electrical chip, which has a first surface and a second surface, and the first surface faces the substrate, and the second surface faces the signal processing layer; the signal processing layer includes: a signal conversion area and a data storage area; a photonic chip is correspondingly arranged in the signal conversion area, and the photonic chip includes: N*M photon computing units, and each photon computing unit includes: an optical waveguide layer, and a modulation layer located on the optical waveguide layer, and the modulation layer is a phase change material layer or the modulation layer includes a phase change material layer; a second electrical chip is correspondingly arranged in the data storage area, which is used for receiving and storing calculation data. The present invention solves the problems of high preparation difficulty and poor heat dissipation performance of the existing packaging structure.

The invention discloses a low-power-consumption multiple-input-multiple-output thermo-optical switch chip which comprises N optical input ports, an N * N optical beam splitter, N spiral waveguide thermo-optical phase shifters, an N * N optical beam combiner and N optical output ports. The N * N light beam splitter and the N * N light beam combiner adopt the same design structure and comprise N single-mode input / output waveguides, N width gradient waveguide transition areas (taper areas) and a multi-mode waveguide area, and each single-mode input and output waveguide is connected to the multi-mode waveguide area through the width gradient waveguide transition area. The spiral waveguide thermo-optic phase shifter comprises two spiral waveguides with different sizes, an S bend with a gradually-changed width and a circular heating electrode. The transmission path of light in the chip can be changed by adjusting the spiral waveguide thermo-optical phase shifter, and the function of optical switch switching is achieved. The invention has the advantages of high integration level, high expandability and low power consumption, and can be used in the field of integrated photon chips.

A cryogenic structure can include a cryogenic chamber that houses a plurality of circuits that operate and cryogenic temperatures, and a room temperature portion that houses a plurality of circuits that operate at non-cryogenic temperatures. The circuits can include computer chips, such as electrical or photonic chips, that are housed on movable structures that insertable into the cryogenic structure.

The present invention provides a semiconductor apparatus achieving interconnection by using an on-chip all-optical switching network module and a manufacturing method therefor. The semiconductor apparatus comprises: a circuit board, which has a plurality of electrical connection paths; an on-chip all-optical switching network module, which is disposed on the circuit board, the on-chip all-optical switching network module comprising a photonic chip and a plurality of analog electrical chips for transceiving which are arranged above the photonic chip, the photonic chip comprising a plurality of communication nodes, a plurality of optical connection paths, and at least one on-chip optical switch which are in corresponding communication connection with the plurality of analog electrical chips for transceiving, and the on-chip optical switch being configured to alter the connection topology among the plurality of communication nodes; and a plurality of computing modules, which are arranged on the circuit board and, by means of the electrical connection paths on the circuit board, are in corresponding communication connection with the plurality of analog electrical chips for transceiving of the on-chip all-optical switching network module, so that the connection topology among the plurality of computing modules can be altered by the on-chip optical switch.

The invention provides a light beam scanning device of an integrated photonics chip and a test method. The light beam scanning device of the integrated photonics chip comprises a chip sample table, a chip sample table base, a light beam receiver connected with a lens cone and a horizontally arranged turntable base, the lens barrel is arranged above the turntable base, and a diaphragm adjusting structure and at least four lens groups are arranged in the lens barrel; the central point of the chip sample table base is overlapped with the central point of the turntable base, the chip sample table base is positioned above the turntable base, and the chip sample table is vertically arranged at the central point of the chip sample table base. Through switching of different lens groups in the lens cone, measurement of far and near fields of the to-be-tested chip is realized by using the same lens cone, the lens cone is arranged on the turntable base, and the test angle range can be adjusted according to specific test requirements so that various chip test requirements can be met.

The invention provides a miniaturized coherent laser wind speed remote measuring instrument and an assembling method thereof.The miniaturized coherent laser wind speed remote measuring instrument comprises an integrated optical module, an optical driving module, a master control processing module and an amplifier, and the integrated optical module comprises a seed laser, a semiconductor optical amplifier and an optical chip; the optical chip adopts a laser radar photon chip and comprises a transmitting link and a receiving link, the transmitting link comprises a beam splitter and a pulse modulator, and an optical mixer and a balance detector are integrated on the receiving link; the integrated optical module is packaged through a photoelectric hybrid packaging technology; and the main control processing module is a high-speed signal acquisition processing module. Through high-density photoelectric hybrid integration, the coherent laser wind speed telemeter is small in size and light in weight, the weight does not exceed 2 kg, and long-distance detection can be guaranteed.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes an optical interposer having optical waveguides; a plurality of chip stacks disposed over the optical interposer, each of the plurality of chip stacks including a first photonic IC chip and a memory chip over the first photonic IC chip; and a plurality of first laser source chips disposed adjacent to the plurality of chip stacks, respectively, wherein the optical waveguides in the optical interposer are configured as an optical interconnect structure to couple with the memory chip through the first photonic IC chip.

The invention provides a packaging structure, an optical module and an optical system, the packaging structure comprises an optical fiber unit and a chip unit, the chip unit comprises a photon chip and a chip cover plate, the photon chip is buckled with the chip cover plate, a spot size converter is arranged in the photon chip, and the spot size converter is composed of a cantilever beam waveguide and a first groove; the optical fiber unit comprises an optical fiber, a bottom plate and an optical fiber cover plate bottom plate; the waveguide is coupled with the optical fiber; wherein a first bonding part is arranged between the chip cover plate and the bottom plate, and a second bonding part is arranged between the photon chip and the optical fiber cover plate; or a first bonding part is arranged between the chip cover plate and the optical fiber cover plate, and a second bonding part is arranged between the photon chip and the bottom plate. In the packaging structure, a chip cover plate is arranged on a photon chip to form a chip unit, so that the bonding area between the chip unit and an optical fiber array is increased, the mechanical stability of the packaging structure is improved, and alignment of waveguides in the photon chip and optical fibers in the optical fiber array is realized.

A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

A co-packaged electro-optical module includes: a first planar light circuit (PLC) block; a silicon photonics chip electrically coupled to one or more chips; a splitter embedded in the first PLC block and to receive laser light from an optical fiber, to split the laser light into two portions, and to provide respective portions of the laser light to two planar waveguides; a planar surface of the silicon photonics chip to receive the portions of the laser light from the two planar waveguides in a direction perpendicular to the planar surface; modulators embedded in the silicon photonics chip and to modulate the portions of the laser light; a side edge of the silicon photonics chip extending perpendicular to the planar surface and to output the modulated portions of the laser light; and a second PLC block coupled to the side edge and to transmit the modulated portions of the laser light.

The invention provides a packaging structure, an optical module and an optical system. The packaging structure comprises a photon chip, an optical fiber array and a substrate. Wherein the photon chip is internally provided with a spot size converter, and the spot size converter is composed of a cantilever beam waveguide and a first groove; the optical fiber array comprises optical fibers, a bottom plate and a cover plate, the bottom plate comprises a second groove, the second groove is used for accommodating the optical fibers, and the cover plate is buckled with the bottom plate; wherein the photon chip is arranged on the upper surface of the substrate, the bottom plate or the cover plate is arranged on the upper surface of the substrate, and the cantilever beam waveguide is in coupling connection with the optical fiber. In the packaging structure, the photon chip and the optical fiber array are arranged on the upper surface of the substrate together, and an additional supporting piece is avoided, so that the mechanical stability of the packaging structure can be ensured, the change of stress near the cantilever beam waveguide caused by temperature change, displacement, external force application and the like in the packaging structure is reduced, and low-stress packaging is realized.

The invention relates to a 3 [mu] m SOI process integration method for an on-chip beam forming and wavelength division multiplexing system. The method comprises the steps of silicon waveguide etching, PN ion implantation, germanium-silicon epitaxy, germanium-silicon waveguide etching, metal layer growth and the like. In order to solve the problem that the silicon PN doping annealing temperature is higher than the germanium-silicon PN doping annealing temperature, the germanium-silicon epitaxial etching postposition technological process is developed, and the non-selective epitaxy and reverse etching modes are used, so that the problem that a wafer is uneven after silicon etching doping is solved. The method has extremely high application value in large-scale silicon photon integration application, and can be used for manufacturing complex active photon chips integrated with modulators, detectors and the like.

A semiconductor package includes a package substrate, an electronic integrated circuit chip mounted on the package substrate, a first photonic integrated circuit chip mounted on the electronic integrated circuit chip, the first photonic integrated circuit chip including a first groove recessed from a top surface and a side surface of the first photonic integrated circuit chip, and a second photonic integrated circuit chip mounted on the first photonic integrated circuit chip, the second photonic integrated circuit chip including a second groove recessed from a top surface and a side surface of the second photonic integrated circuit chip, wherein the second photonic integrated circuit chip is offset-stacked on the first photonic integrated circuit chip, wherein at least a portion of a bottom surface of the first groove of the first photonic integrated circuit chip is exposed to the outside.

Laser-scanning systems for augmented reality glasses displays and LiDAR (light detection and ranging) use photonic integrated circuits to generate multiple collimated (or low-divergence) modulated laser beams. Laser light is guided on the photonic chip, expanded, and emitted from the surface of the chip (using grating coupler devices) as one or more large-diameter (e.g., millimeter-scale), collimated or low-divergence beams. These gratings may be integrated onto movable microelectromechanical systems (MEMS) plates to steer the beam along two angular axes. Alternatively, the beam(s) from the grating(s) may be steered by a separate MEMS mirror integrated onto the photonic chip or on another chip. Such systems enable multi-beam laser scanning systems without collimation lenses, reducing the size and packaging complexity of high-performance laser scanning systems for augmented reality glasses and LiDAR.

An optical source is described. This optical source may include a semiconductor laser chip and a silicon-photonics chip that provide an optical cavity. The semiconductor laser chip may provide gain at multiple lasing wavelengths in a band of wavelengths. Moreover, the silicon-photonics chip may adjust a size of an optical signal proximate to an interface between the semiconductor laser chip and the silicon-photonics chip. Furthermore, by adjusting a phase of a phase shifter and resonance frequencies of a micro-ring resonator in the silicon-photonics chip, a center frequency of a passband of the micro-ring resonator may be matched to a non-zero integer multiple of a cavity-mode spacing. This may allow the optical source to mode-lock the lasing wavelengths of the optical source by suppressing unwanted lasing wavelengths and re-enforcing the lasing wavelengths. In some embodiments, a free-spectral range of the optical source may be between 100 GHz and 800 GHz.

The invention relates to a DR4 silicon optical chip, which is characterized in that one side surface of a chip main body is an optical surface inclined by 8 + / -0.1 degrees, four output waveguides which are perpendicular to and intersect with the optical surface are arranged on the chip main body side by side, and an input waveguide which intersects with the optical surface is arranged on the chip main body. According to the 400G silicon optical engine, the end face of a multi-channel optical fiber array is a 0-degree face, the 0-degree face of the multi-channel optical fiber array is attached to the optical face of a DR4 silicon optical chip, and the multi-channel optical fiber array is coupled with four output waveguides on the DR4 silicon optical chip. The beneficial effects are that the DR4 silicon optical chip is provided with an optical surface with an inclination of 8 + / -0.1 degree, and the output waveguide is perpendicular to and intersects with the optical surface, so when the DR4 silicon optical chip is applied to a 400G silicon optical engine, the end surface of the selected multichannel optical fiber array can be a 0-degree surface, the grinding efficiency of the multichannel optical fiber array is effectively improved, the angle error is reduced, and the grinding precision is improved. The coupling efficiency is improved.

Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector, a first waveguide core coupled to the photodetector, and a second waveguide core coupled to the photodetector. The structure further comprises a third waveguide core including a section disposed laterally between a section of the first waveguide core and a section of the second waveguide core.

Embodiments of this application provide a laser beam machining method targeted at chalcogenide materials and an integrated photonic device, relating to the technical fields of integrated photonic chip machining. The laser beam machining method targeted at chalcogenide materials includes: acquiring a dielectric substrate with a preset size, and cleaning the dielectric substrate; preparing a uniform and dense sulfide film on a surface of the dielectric substrate; obtaining a laser spot with a preset energy distribution pattern according to a preset machining pattern; generating laser spot scanning parameters according to the preset machining pattern; and carrying out etching-free laser oxidation machining on the sulfide film through the laser spot according to the spot scanning parameters to obtain a chalcogenide integrated photonic device. The laser beam machining method targeted at chalcogenide materials can significantly simplify the machining flow of integrated photonic chips and improve the machining efficiency of photonic chips.

The invention provides a coupling system for an on-chip light source and a photon chip. The coupling system comprises an input light source, a collimating lens, a focusing lens, a reflecting prism and an on-chip grating which are sequentially arranged in the direction of a light path, and an optical waveguide located on the side face of the on-chip grating. The collimating lens is used for primarily shaping emergent light of an input light source into a collimated light beam, the focusing lens is used for focusing the collimated light beam to the on-chip grating, and the collimating lens and the focusing lens are both aspheric plano-convex lenses. According to the system, non-uniformity caused by a large divergence angle of the semiconductor laser is effectively corrected through the aspheric micro lens, output of approximately parallel light beams is achieved, the light beams are accurately focused to the photon chip grating through the aspheric focusing lens subsequently, the coupling efficiency of light energy is greatly improved, and compared with two cylindrical lenses in the prior art, the coupling efficiency of light energy is greatly improved. The design of the focusing lens and the reflector is added, so that the number of optical elements is reduced, and error accumulation is reduced.

The present invention discloses a microwave topological photonic crystal metasurface antenna, which belongs to the field of communication technology. The present invention adopts a layered structure similar to a patch antenna, including a ground plate, a dielectric layer, a topological photonic crystal, a rectangular metal frame, and a microstrip feeder arranged from bottom to top. The topological photonic crystal is arranged above the dielectric layer, the rectangular metal frame is coated on the periphery of the topological photonic crystal, and the microstrip feeder is connected to the rectangular metal frame. The present invention can achieve multi-band characteristics and extended bandwidth. In addition, most of the electromagnetic waves propagated by the antenna within the band gap range are suppressed, and only electromagnetic waves of the angular state frequency can propagate, with smaller return loss, and the topological angular state can achieve unidirectional radiation, with better directivity at high frequencies. As a result, the antenna performance is greatly improved, which is very suitable for on-chip optical interconnection and photonic chip integration, and meets the needs of 5G / 6G communications, quantum computing, etc. for miniaturized devices.

The present application provides a packaging structure, an optical module and an optical system. The packaging structure comprises a photonics integrated circuit, a fiber array, and a substrate, wherein a spot size converter is arranged in the photonic chip and is composed of a cantilever beam waveguide and a first groove; the fiber array comprises an optical fiber, a base plate and a cover plate, the base plate comprising a second groove for accommodating the optical fiber, and the cover plate being snap-fitted with the base plate; and the photonic chip is arranged on an upper surface of the substrate, the base plate or the cover plate is arranged on the upper surface of the substrate, and the cantilever beam waveguide is coupled to the optical fiber. In the packaging structure, the arrangement of both the photonics integrated circuit and the fiber array on the upper surface of the substrate and the elimination of the use of additional support members can ensure the mechanical stability of the packaging structure, which reduces stress variations near the cantilever beam waveguide in the packaging structure caused by temperature changes, displacement or external forces, thereby achieving low-stress packaging.

Provided is a semiconductor package including a package substrate and a photonic integrated circuit chip arranged on the package substrate, having a groove extending from a lateral surface of the photonic integrated circuit chip to the inside of the photonic integrated circuit chip, and including a photoelectric converter, wherein the photoelectric converter includes a light-emitting device configured to generate an optical signal, a first waveguide connected to the light-emitting device and providing a path through which the optical signal travels, a first grating coupler configured to output the optical signal, a second waveguide connected to first grating coupler, and a tunable coupler connected to the first waveguide and the second waveguide.

The invention relates to an optical signal transmission device. The optical signal transmission device comprises an optical transmitter and an optical receiver. The optical transmitter and the optical receiver are connected through an optical fiber, the optical transmitter comprises a laser and a silicon optical chip, and the laser is used for outputting multiple paths of optical signals to be transmitted to the silicon optical chip; the silicon optical chip is used for carrying out modulation and wave combination processing on multiple paths of optical signals to be transmitted and transmitting the processed optical signals to the optical receiver through an optical fiber; and the optical receiver is used for performing photoelectric conversion on the processed optical signal to generate an electric signal corresponding to the optical signal to be transmitted. According to the invention, the silicon optical chip is directly adopted to realize modulation and wave combination processing at the same time instead of adopting semiconductor chips such as a laser chip for modulation and then adopting an independently arranged wave combiner for wave combination, so that the optical transceiver module can be arranged more ingeniously, the integrity of optical signal transmission can be ensured, and the optical signal transmission efficiency is improved. And the optical signal transmission performance can be improved.

The invention provides a large-scale photon chip inter-chip optical interconnection method and a photon chip integration system. The large-scale photon chip inter-chip optical interconnection method comprises the following steps: preparing a plurality of grooves in a substrate; preparing photon chips, and installing the photon chips in the plurality of grooves; preparing a covering layer on the substrate and the photon chip; preparing a reflector on the surface of the covering layer; and inputting an optical signal from the input port of one photon chip, outputting the optical signal processed by the photon chip into the covering layer at a specific diffraction angle from the output port of the photon chip, and finally reflecting the optical signal to other photon chips through the reflector and finally outputting the optical signal, thereby realizing inter-chip optical interconnection of the photon chips.

The invention discloses an optical engine and an optical module based on a silicon optical chip. The optical engine comprises a PCB (Printed Circuit Board); the optical assembly substrate is arranged on the PCB; the optical transmitting assembly is arranged on the optical assembly substrate, the optical transmitting assembly comprises a COC, a transmitting end silicon optical chip and a transmitting end optical fiber array unit which are sequentially arranged along an optical path, the COC is used for generating signal light, the signal light is coupled to enter an optical inlet waveguide of the transmitting end silicon optical chip, and the transmitting end optical fiber array unit is coupled with an optical outlet waveguide of the transmitting end silicon optical chip; the optical receiving assembly is arranged on the optical assembly substrate, the optical receiving assembly comprises a receiving end optical fiber array unit and a receiving end silicon optical chip which are sequentially arranged along an optical path, and the receiving end optical fiber array unit is coupled with an incident waveguide of the receiving end silicon optical chip; and the connector is connected with the transmitting end optical fiber array unit and the receiving end optical fiber array unit. The number of used optical elements is reduced, the structural layout of the optical assembly is optimized, and therefore the technological process of the optical assembly is effectively simplified.

Systems and methods described herein relate to fabricating photonic chip-to-chip couplings. In one embodiment, a system for fabricating a photonic chip-to-chip coupling bonds a substrate to first and second photonic chips. The system also generates, based on images of the bonded substrate and the first and second photonic chips captured by an imaging system, an initial optimum design for a waveguide within the substrate to optically couple the first and second photonic chips. The system also etches a first portion of the waveguide in accordance with the initial optimum design using a laser that polymerizes regions of the substrate. The system also monitors the etching of the first portion of the waveguide via the imaging system and generates an updated optimum design for a second portion of the waveguide that compensates for detected error in the first portion of the waveguide.

The invention provides a semiconductor device for realizing interconnection by using an on-chip all-optical switching network module and a manufacturing method thereof. The semiconductor device includes: a circuit board having a plurality of electrical connection paths; the on-chip all-optical switching network module is arranged on the circuit board and comprises a photon chip and a plurality of analog electric chips which are arranged above the photon chip and are used for transmitting and receiving; the photon chip comprises a plurality of communication nodes, a plurality of optical connection paths and at least one on-chip optical switch which are in corresponding communication connection with the plurality of analog electric chips for receiving and transmitting, and the on-chip optical switch is configured to be capable of changing the connection topology among the plurality of communication nodes; and the plurality of calculation modules are arranged on the circuit board and are in corresponding communication connection with the plurality of analog electric chips for transmitting and receiving of the on-chip all-optical switching network module through the electric connection paths on the circuit board, so that the connection topology among the plurality of calculation modules can be changed by the on-chip optical switch.

The present invention discloses a quartz substrate lithium niobate mode spot converter, which relates to the fields of optical communication and microwave photonics. The present invention includes a quartz substrate layer, a silica cladding layer, a lithium niobate waveguide layer, an oxide interlayer and an oxide upper cladding layer. The lithium niobate waveguide layer is a three-layer stepped structure, and the cross-sections of the fiber coupling ends of the three-layer lithium niobate waveguide layers are all isosceles trapezoids. The cross-sections of the fiber coupling ends of the oxide interlayer and the oxide upper cladding layer are both provided with notches at the lower part and isosceles trapezoidal protrusions at the upper part, and the oblique side angles of the isosceles trapezoidal protrusions of the oxide interlayer and the oxide upper cladding layer and the isosceles trapezoidal cross-sections of the lithium niobate waveguide layer do not exceed 70°. The present invention can achieve high coupling and low transmission loss when optical signals are coupled between an integrated lithium niobate photonic chip and an optical fiber, and reduces the process processing difficulty, and has high practicability.

Structures including a light source and an edge coupler, and methods of forming and using such structures. The structure comprises a semiconductor substrate and a back-end-of-line stack on the semiconductor substrate. The back-end-of-line stack includes a first dielectric layer, a first plurality of metal features in the first dielectric layer, a second dielectric layer on the first dielectric layer, and a second plurality of metal features in the second dielectric layer. The second plurality of metal features have a non-overlapping relationship with the first plurality of metal features. The structure further comprises an edge coupler adjacent to the first plurality of metal features and the second plurality of metal features.

The invention discloses a self-reference three-phase polarization imaging system and method based on an integrated photon neural network, and the method comprises the steps: setting a fixed phase difference in a silicon-based photon chip to achieve three-phase projection and single-port reading, outputting a three-phase interference signal at the same time, obtaining all phase and polarization information in one-time imaging to achieve full-polarization measurement, and carrying out the single-port reading of the silicon-based photon chip; according to the invention, the effective resolution ratio is consistent with that of an original detection array, power and temperature drift is eliminated, single-frame acquisition has no time sequence error and motion artifact, a stable and compact single-port self-reference reading mode is realized through a three-phase interference measurement architecture constructed on a chip in combination with channel normalization and rotation correction, and complete Stokes parameters and polarization information can be measured. According to the system provided by the invention, the MZI is adopted, so that the phase bias can be flexibly adjusted, and different bandwidth requirements can be met by adjusting an interference path. The silicon-based photon platform has a broadband response characteristic and can cover a visible wave band, so that the device can keep stable interference performance in a communication wave band.