The invention relates to a method for preparing a hollow silicon nano conical array, in particular to a method for preparing the hollow silicon nano conical array with large area, uniform bottom diameter length, controllable spacing, controllable period and orderly arrangement. The method comprises the following four steps: washing and surface hydrophilization treatment of a monocrystalline silicon piece, preparation of polystyrene monolayer colloidal crystals, preparation of a hollow silicon nano column array, and construction of a hollow silicon nano conical array. The hollow silicon nano conical array obtained by the method has the advantages of large area, uniform bottom diameter length, controllable spacing, controllable period and orderly arrangement, has extremely superior broad-band dereflection performance, and effectively reduces the surface reflection loss from deep ultraviolet band to medium infrared band (250 nanometers to 15 mu m). The method is simple and controllable, and has wide application prospect on construction of photoelectric devices with low cost and large area and deflection surfaces.