The invention discloses a full-wave-band high-
reflectivity metal composite film structure and a preparation method thereof, and relates to the technical field of
semiconductor light-emitting elements. The
metal composite film structure is applied to a light-emitting element, light enters from one side of an adhesion layer of the
metal composite film structure, and the metal composite
film structure at least comprises the adhesion layer with the thickness
ranging from 0.5 nm to 2.5 nm; the composite reflecting layer is arranged on the adhesion layer, and the composite reflecting layer is of a stacked structure of a silver layer and an aluminum layer, or is a silver-aluminum
alloy layer. The invention further discloses a preparation method of the structure, a vacuum
electron beam
evaporation process is adopted, when the composite reflecting layer is deposited, the
evaporation rate is controlled to be 1-15 angstroms per second, and cavity heating at the temperature of 40-70 DEG C is supplemented. The invention preferably also comprises a double-layer protection structure consisting of atomic layer deposited aluminum
oxide and chemical vapor deposited
silicon dioxide. According to the invention, the problems of low
reflectivity, narrow
wave band, contradiction between
adhesive force and
reflectivity, high-cost
sputtering process damage and the like of a traditional reflector are solved, and the advantages of full-
wave band high reflectivity, high
adhesive force, high reliability, low cost and low damage preparation are realized.