31889 results about "Aluminium oxide" patented technology

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common layer-formation technique, known as chemical-vapor deposition (CVD), produces uneven layers and covers vertical surfaces poorly. An emergent technique, atomic-layer deposition, overcomes these shortcomings, but has others, such as slow deposition rates and longer than desirable cycle times, particularly as applied to deposition of aluminum oxide. Accordingly, the inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary system includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.

Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g / cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole percent to about 30 mole percent. The alloying of yttrium oxide with a compatible oxide improves wear resistance, flexural strength, and fracture toughness of the protective coating, relative to pure yttrium oxide.

Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide / silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about 120 Å over the layer of porous aluminum oxide.

The present invention relates to a dielectric layer alloyed with hafnium oxide and aluminum oxide and a method for fabricating the same. At this time, the dielectric layer is deposited by an atomic layer deposition technique. The method for fabricating the hafnium oxide and aluminum oxide alloyed dielectric layer includes the steps of: depositing a single atomic layer of hafnium oxide by repeatedly performing a first cycle of an atomic layer deposition technique; depositing a single atomic layer of aluminum oxide by repeatedly performing a second cycle of the atomic layer deposition technique; and depositing a dielectric layer alloyed with the single atomic layer of hafnium oxide and the single atomic layer of aluminum oxide by repeatedly performing a third cycle including the admixed first and second cycles.

According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate comprises a step of forming a buffer layer on the substrate, where the buffer layer comprises ALD silicon dioxide. The buffer layer can be formed by utilizing a silicon tetrachloride precursor in an atomic layer deposition process, for example. The buffer layer comprises substantially no pin-hole defects and may have a thickness, for example, that is less than approximately 5.0 Angstroms. The method further comprises forming a high-k dielectric layer over the buffer layer. The high-k dielectric layer may be, for example, hafnium oxide, zirconium oxide, or aluminum oxide. According to this exemplary embodiment, the method further comprises forming a gate electrode layer over the high-k dielectric layer. The gate electrode layer may be polycrystalline silicon, for example.

A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template.

A method for forming an aluminum nitride-based film on a substrate by plasma-enhanced atomic layer deposition (PEALD) includes: (a) forming at least one aluminum nitride (AlN) monolayer and (b) forming at least one aluminum oxide (AlO) monolayer, wherein steps (a) and (b) are alternately conducted continuously to form a laminate. Steps (a) and (b) are discontinued before a total thickness of the laminate exceeds 10 nm, preferably 5 nm.

A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.

A protective, biocompatible coating or encapsulation material protects and insulates a component or device intended to be implanted in living tissue. The coating or encapsulation material comprises a thin layer or layers of alumina, zirconia or other ceramic, less than 25 microns thick, e.g., 5-10 microns thick. The alumina layer(s) may be applied at relatively low temperature. Once applied, the layer provides excellent hermeticity, and prevents electrical leakage. Even though very thin, the alumina layer retains excellent insulating characteristics. In one embodiment, an alumina layer less than about 6 microns thick provides an insulative coating that exhibits less than 10 pA of leakage current over an area 75 mils by 25 mils area while soaking in a saline solution at temperatures up to 80° C. over a three month period.

A ceramic-metal composite articulation is provided with substantial elimination of wear debris, wherein a ceramic material is provided with superior mechanical properties tailored for articulating with ceramic articulations having high flexural strength (greater than about 700 MPa), high fracture toughness (greater than about 7 MPa1 / 2) and a high Weibull modulus (greater than about 20), in comparison with presently available bio-ceramics such as alumina or zirconia. The mechanical property enhancement enables ceramic materials with greater reliability and significantly reduced in-vivo fracture risk to be obtained. Preliminary in-vitro wear performance, to several million cycles using established test protocols, of head / cup components in a prosthetic hip joint made from these ceramics also demonstrates the ultra low wear characteristics. These material properties substantially eliminate polyethylene (PE) wear debris mediated implant failures by offering an optimal combination of bio-mechanical safety and reliability with ultra low wear performance.

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

An electrical-energy-storage unit (EESU) has as a basis material a high-permittivity composition-modified barium titanate ceramic powder. This powder is double coated with the first coating being aluminum oxide and the second coating calcium magnesium aluminosilicate glass. The components of the EESU are manufactured with the use of classical ceramic fabrication techniques which include screen printing alternating multilayers of nickel electrodes and high-permittivitiy composition-modified barium titanate powder, sintering to a closed-pore porous body, followed by hot-isostatic pressing to a void-free body. The components are configured into a multilayer array with the use of a solder-bump technique as the enabling technology so as to provide a parallel configuration of components that has the capability to store electrical energy in the range of 52 kW·h. The total weight of an EESU with this range of electrical energy storage is about 336 pounds.

PCT No. PCT / JP97 / 02965 Sec. 371 Date Nov. 2, 1998 Sec. 102(e) Date Nov. 2, 1998 PCT Filed Aug. 26, 1997 PCT Pub. No. WO98 / 09005 PCT Pub. Date Mar. 5, 1998A plurality of recesses having the same interval and array as those of pores of an alumina film, which are to be formed in anodizing, are formed on a smooth surface of an aluminum plate in advance, and then, the aluminum plate is anodized. With this process, the roundness of the pores of the porous anodized alumina film and the uniformity of pore size are improved, and the pores are regularly arrayed at a predetermined interval. The recesses are formed by pressing a substrate having a plurality of projections on its surface against the aluminum plate surface to be anodized.

A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (ZrO2) layer and an aluminum oxide (Al2O3) layer; and forming a plate electrode on the multi-layered dielectric structure.

The invention discloses a manufacturing method for aluminium dioxide, blends two kinds of different thin water aluminium wafer powder evenly, and then carries on dissolving and forming, drying, baking and gets the aluminum oxide. The first kind of thin water aluminum mine has a hole capacity of 0.50ml / g~0.80ml / g, the proportion accounts for 5w%~50w% of Al2O3 . the hole capacity of the second aluminum mine is about 0.85ml / g ~1.50ml / g. There has no contamination by using the method; the diameter of the carrier is in the range of 6nm~35nm and 100nm~2000nm; the carrier can be used as carrier of protection agent in heavy oil producing, metal eliminating catalyst and so on.

A ceramic member comprises a base including an alumina sintered body, and an yttria sintered body formed on the alumina sintered body and exposed to a corrosive gas; and a metallic member buried in the base.

The invention discloses a low-carbon alkane dehydrogenation catalyst and a preparation method thereof. The catalyst is prepared from chromium serving as an active metal ingredient, alkali metal serving as an auxiliary catalytic ingredient and chromium-containing aluminum oxide serving as a carrier, wherein the weight content of the chromium oxide in the carrier is 2.0 to 15.0 percent. In the method, the active metal ingredient, namely chromium, is introduced into the aluminum oxide carrier by partially using a kneading method and partially using an immersion method; pseudo-boehmite mixed with chromium is processed by adopting a three-step roasting method and a hydrothermal method; and thus, the porous structure and the surface character of the carrier can be improved, the content and the distribution of the active metal chromium in the carrier and the mutual effect between the active metal and the aluminum oxide are further modulated, the activity and the stability of the catalyst are improved, the carbon depositing resistance of the catalyst is enhanced, and the service life of the catalyst is prolonged.

The present invention provides CMP abrasive slurry that is substantially free of aluminum oxide and comprises liquid and solids wherein the solids comprises: (a) in an amount of at least about 90 weight percent based on the solids, at least one non-spherical component having formula Al2O3.xH2O where x ranges from 1 to 3; and (b) up to about one weight percent based on the solids portion of submicron alpha-alumina. The CMP abrasive slurry may be used to polish metallic or dielectric surfaces in computer wafers.

A nitride semiconductor device according to one embodiment of the present invention includes: a non-doped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (AlyGa1-yN (0≦y≦1, x <y)) layer which is formed on the first aluminum gallium nitride layer as a barrier layer; an aluminum nitride (AlN) film which is formed on the second aluminum gallium nitride layer as a gate insulating film lower layer; an aluminum oxide (AL2O3) film which is formed on the aluminum nitride film as a gate insulating film upper layer; a source electrode and a drain electrode which are formed as first and second main electrodes to be electrically connected to the second aluminum gallium nitride layer, respectively; and a gate electrode which is formed on the aluminum oxide film as a control electrode.

A nitride semiconductor device according to one embodiment of the present invention comprises: a non-doped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (AlyGa1-yN (0≦x≦1,x<y)) layer which is formed on the first aluminum gallium nitride layer as a barrier layer; an aluminum nitride (AlN) film which is formed on the second aluminum gallium nitride layer as a gate insulating film lower layer; an aluminum oxide (Al2O3) film which is formed on the aluminum nitride film as a gate insulating film upper layer; a source electrode and a drain electrode which are formed as first and second main electrodes to be electrically connected to the second aluminum gallium nitride layer, respectively; and a gate electrode which is formed on the aluminum oxide film as a control electrode.

A bulk single phase glass comprising 23 molar % to 50 molar % rare earth oxides, RE203, and 50 molar % to 77 molar % aluminum oxide, A12O3 is provided. The glass contains at least 50 molar % of Al2O3+RE2O3 and smaller amounts of oxide glass forming agents and other oxides than are found in prior art glasses. The addition of small amounts of lanthanum oxide, La2O3, prevents phase separation. The single phase glass is useful for optical applications such as lasers and optical amplifiers.

A cracking catalyst for petroleum hydrocarbon is proportionally prepared from clay, aluminum oxide prepared from alpha-AlO(OH), Y-type molecular sieve containing RE and P and silicon oxide. Its advantages are strong power to convert heavy oil and high output rate of diesel oil.

Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.