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Planarization composition

a technology of composition and planarization, applied in the field of new slurry, can solve the problems of increasing technical demand, scratching the metal surface of the wafer, and difficult to maintain uniformity

Inactive Publication Date: 2006-12-21
BASF AG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An issue that further increases the technical demand is the move toward 300 mm wafers.
The larger wafer makes it more difficult to maintain uniformity over larger length scales as compared to an 8″, or 200 mm, wafer.
However, we believe that the presence of aluminum oxide at even <5 weight percent in the solids portion of a CMP slurry may scratch the metal surface of the wafer.

Method used

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  • Planarization composition
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Examples

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Embodiment Construction

[0022] The present invention uses a component having the formula Al2O3.xH2O where x ranges from 1 to 3. When x is 1 in the preceding formula, the resulting product is known as diaspore and has a Mohs' hardness of about 6.5-7. When x ranges from greater than 1 to 2, i.e., 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, or 2, the resulting products are known as boehmite or pseudoboehmite and have a Mohs' hardness of about 2.5-3. When x is 3 in the preceding formula, the resulting products are known as gibbsite, doyleite, nordstrandite (all with Mohs' hardness of about 2.5-3), or bayerite, Preferably, the component is boehmite or pseudoboemite.

[0023] Examples of the phrase “at least one non-spherical component having the formula Al2O3.xH2O” as used herein includes but is not limited to the following mixtures of phases: Al2O3.1.2H2O and Al2O3.1.6H2O, Al2O3.1.2H2O and Al2O3.2H2O, and Al2O3.1.6H2O and Al2O3.2H2O, and Al2O3.1.5H2O and Al2O3.3H2O. One useful commercially available mixture is ...

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Abstract

The present invention provides CMP abrasive slurry that is substantially free of aluminum oxide and comprises liquid and solids wherein the solids comprises: (a) in an amount of at least about 90 weight percent based on the solids, at least one non-spherical component having formula Al2O3.xH2O where x ranges from 1 to 3; and (b) up to about one weight percent based on the solids portion of submicron alpha-alumina. The CMP abrasive slurry may be used to polish metallic or dielectric surfaces in computer wafers.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates to a novel slurry for chemical-mechanical planarization (CMP). The present invention is applicable to manufacturing high speed integrated circuits having submicron design features and high conductivity interconnect structures with high production throughput. [0002] In the fabrication of integrated circuits and other electronic devices, multiple layers of conducting, semiconducting, and dielectric materials are deposited on or removed from a surface of a substrate. Thin layers of conducting, semiconducting, and dielectric materials may be deposited by a number of deposition techniques. Common deposition techniques in modern processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and now electrochemical plating (ECP). [0003] As layers of materials are sequentially deposited and removed, the uppermost surface of the s...

Claims

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Application Information

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IPC IPC(8): B24D3/02
CPCH01L21/3212C09G1/02
Inventor PETROVIC, IVANMATHUR, SHARAD
Owner BASF AG
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