7963 results about "High conductivity" patented technology

Composite electrodes including carbon nanofibers (fibrils) and an electrochemically active material are provided for use in electrochemical capacitors. The fibril composite electrodes exhibit high conductivity, improved efficiency of active materials, high stability, easy processing, and increase the performance of the capacitor. A method for producing the composite electrodes for use in electrochemical capacitors is also provided.

Dual damascene methods and structures are provided for IC interconnects which use a dual-damascene process incorporating a low-k dielectric material, high conductivity metal, and an improved hard mask scheme. A pair of hard masks are employed: a silicon dioxide layer and a silicon nitride layer, wherein the silicon dioxide layer acts to protect the silicon nitride layer during dual damascene etch processing, but is subsequently sacrificed during CMP, allowing the silicon nitride layer to act as a the CMP hard mask. In this way, delamination of the low-k material is prevented, and any copper-contaminated silicon dioxide material is removed.

A first flux-loop inductive coupler element electrically couples with a second flux-loop inductive coupler element. The first flux-loop inductive coupler element comprises a first ring-like core having high magnetic permeability and a conical-section annular first face transverse to the plane of the first core. The first face has a first annular groove separating a first conical-section larger-diameter face and a first conical-section smaller-diameter face. A first coil is wound within the annular groove. The first and second cores form a low-reluctance closed magnetic path around the first coil and a second coil of the second flux-loop inductive coupler element.

A first current-loop inductive coupler element electrically couples with a second current-loop inductive coupler element. The first current-loop inductive coupler element has a first high-conductivity, low-permeability shaped belt of a first end of a first pipe joint, a first ring-like core located at the first end, and a first electrically conductive coil wound about the first ring-like core. The first high-conductivity, low-permeability shaped belt partially encloses the first coil. It is shaped to cooperate with the second high-conductivity, low-permeability shaped belt of an adjacent second pipe joint having a second electrically conductive coil and a second high-conductivity, low-permeability shaped belt to create a closed toroidal electrical conducting path. The closed toroidal electrical conducting path encloses the first coil and the second coil when the first and second pipe joints are mated.

A new transparent conducting oxide (TCO), which can be expressed as Al_xGa_3−x−yIn_5+ySn_2−zO_16−2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al₂O₃—Ga₂O₃—In₂O₃—SnO₂ system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

Improved electromagnetic compatibility for integrated motherboard or device board designs is provided by magnetic shielding, electric shielding, or both integrated into the chip packaging materials. Motherboard emissions may be reduced by use of the shielding. A nonconductive primary and tertiary layer sandwich a high-conductivity metal secondary layer forming a Faraday cage for electric field shielding. A nonconductive primary layer is covered by a tertiary layer formed of a composite having permeable material for magnetic shielding. The tertiary layer formed of a composite could include a high permeability particulate ferrous material. Both the secondary layer and the tertiary layer formed of a composite could be used for both electric and magnetic shielding of chips.

The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and spin barrier layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer layer and the spin barrier layer. The spin barrier layer is configured to reduce an outer surface contribution to a damping constant of the free layer. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity, preferably being metallic, and may have a long spin diffusion length.

The invention relates to a graphene composite material and a preparation method thereof. The graphene composite material provided by the invention is characterized in that a graphene material plate fixed on a metallic matrix serves as a carrier, and the elementary substance and/or a compound are compounded on the graphene surface. Meanwhile, the invention also discloses a method for preparing the graphene composite material. The graphene composite material prepared by the invention is opened between graphene sheets and is compounded with a chemical substance under the condition that a space body structure is formed, and the obtained material has high conductivity, high specific surface area and excellent performance of low electrical resistivity between the sheets, and can be widely applied to the fields of energy storage materials such as lithium ion batteries, super-capacitors, super lead carbon batteries, super nickel-carbon electrodes, solar energy and fuel cells, the field of heat dissipation materials, the field of environment-friendly adsorbing materials, the field of sea water desalination materials, the field of photoelectric sensor materials, the biological relevance field, the field of catalyst materials and the fields of conductive ink and coating materials.

A method for making carbon nanotube particulates involves providing a catalyst comprising catalytic metals, such as iron and molybdenum or metals from Group VIB or Group VIIIB elements, on a support material, such as magnesia, and contacting the catalyst with a gaseous carbon-containing feedstock, such as methane, at a sufficient temperature and for a sufficient contact time to make small-diameter carbon nanotubes having one or more walls and outer wall diameters of less than about 3 nm. Removal of the support material from the carbon nanotubes yields particulates of enmeshed carbon nanotubes that retain an approximate three-dimensional shape and size of the particulate support that was removed. The carbon nanotube particulates can comprise ropes of carbon nanotubes. The carbon nanotube particulates disperse well in polymers and show high conductivity in polymers at low loadings. As electrical emitters, the carbon nanotube particulates exhibit very low “turn on” emission field.

Described herein are improved capabilities for a system and method for wireless energy distribution across a vehicle compartment of defined area, comprising a source resonator coupled to an energy source of a vehicle and generating an oscillating magnetic field with a frequency, and at least one repeater resonator positioned along the vehicle compartment, the at least one repeater resonator positioned in proximity to the source resonator, the at least one repeater resonator having a resonant frequency and comprising a high-conductivity material adapted and located between the at least one repeater resonator and a vehicle surface to direct the oscillating magnetic field away from the vehicle surface, wherein the at least one repeater resonator provides an effective wireless energy transfer area within the defined area.

A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.

A bistable electrical device (50) employing a bistable body (52) and a high conductivity material (54). A sufficient amount of high conductivity material (54) is included in the bistable body (52) to impart bistable between a low resistance state and a high resistance state by application of an electrical voltage (60).

The embodiments of the present invention provide a CMUT array and method of fabricating the same. The CMUT array has CMUT elements individually or respectively addressable from a backside of a substrate on which the CMUT array is fabricated. In one embodiment, a CMUT array is formed on a front side of a very high conductivity silicon substrate. Through wafer trenches are etched into the substrate from the backside of the substrate to electrically isolate individual CMUT elements formed on the front side of the substrate. Electrodes are formed on the backside of the substrate to individually address the CMUT elements through the substrate.

Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.

Provided is a transparent electrode including a graphene sheet. A transparent electrode having high conductivity, low sheet resistance, and low surface roughness can be prepared by employing the graphene sheet.

The invention relates to a high-conductivity aluminum alloy material for a cable and a preparation method thereof. The aluminum alloy material comprises the following components in percentage by weight: 0.25-0.80 percent of iron element, 0.02-0.15 percent of boron element, 0.1-1.5 percent of rare earth element and the balance of aluminum and inevitable impurities. The aluminum alloy is formed by adding an aluminum alloy intermediate alloy, an aluminum-boron alloy and an aluminum-rare earth intermediate alloy into an aluminum ingot of which the purity is more than 99.80 percent by weight and carrying out a casting process and annealing treatment on the mixture. Compared with a common electric aluminum conductor, the prepared aluminum alloy conductor has more excellent conductive performance and the conductivity reaching or exceeding 62.5 percent IACS (International Annealed Copper Standard); the aluminum alloy conductor treated by using a special process has excellent flexibility and creep resistance; and compared with a common electric aluminum conductor, the prepared aluminum alloy material used as a cable extrusion insulating lead core is more energy-saving and safer.

A memory device includes an array of NAND strings of memory cells. The device includes a plurality of stacks of conductive strips separated by insulating material, including at least a bottom plane of conductive strips, a plurality of intermediate planes of conductive strips, and a top plane of conductive strips. The device includes charge storage structures in interface regions at cross-points between side surfaces of the conductive strips in the plurality of intermediate planes in the stacks and inter-stack semiconductor body elements of a plurality of bit line structures. At least one reference line structure is arranged orthogonally over the stacks, including vertical conductive elements between the stacks in electrical communication with a reference conductor between the bottom plane of conductive strips and a substrate, and linking elements over the stacks connecting the vertical conductive elements. The vertical conductive elements have a higher conductivity than the semiconductor body elements.

The present invention includes the preparation of highly conducting conjugated polymers and their use as electrochemical actuators, A typical electrochemical actuator comprises a highly conducting, conjugated polymer for the anode or the cathode, or for both the anode and the cathode; suitable conjugate polymers have a conductivity ≧100 S/cm. The material may have any form, including films and fibers. A preferred shape is a strip or a fiber, where the fiber can be solid or hollow, although any shape may be used. Before use, the material may be treated, for example, by immersion in an acid, in order to dope/protonate the material or to introduce anions or to exchange the anion in the polymer for another anion. Other materials may be incorporated in the polyaniline to increase its conductivity or to provide other benefits, such as increased strength. Useful conducting polymers include monomers of anilines, pyrroles, thiophenes, phenylene vinylenes, and derivatives thereof.

The present invention is directed to a novel capacitor. The capacitor may be used in electric double layer capacitors. The capacitors include a polarizable electrode including activated carbon and a non-polarizable electrode including lead dioxide and lead sulfate. The capacitors of the present invention provide considerably higher electric capacity, higher durability, and low resistance, while maintaining high conductivity. Additionally, the electrodes may be produced more quickly and inexpensively.

The present invention is drawn to a high power electrochemical energy storage device, comprising at least one stackable, monolithic battery unit. The monolithic battery unit includes at least two electrochemical energy storage cells. The cells have a lithium ion insertion anode and a lithium ion insertion cathode, a bipolar current collector between cells and end plate current collectors at the opposing ends of each battery unit. A frame may be associated with the perimeter of the current collector. The current collector comprises a high-conductivity metal. The device also has the at least two storage cells substantially aligned adjacent one another, a separator material associated between the anode and the cathode within each cell; and an electrolyte within each cell.

Additionally, the present invention is drawn to a device combining two or more of the monolithic units, either in series or in parallel or any combination thereof, so as to create a high power, high voltage energy storage device.