8 results about "Spin transfer" patented technology

Spin-Hall (SH) material (135) is provided near free regions (110) of magnetoresistive devices that include magnetic tunnel junctions (110, 115, 120). Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

This invention belongs to the field of magnetic tunnel junction technology, and particularly relates to a free layer of a magnetic tunnel junction, a magnetic tunnel junction, and a spin-transfer torque magnetic random access memory (STM). The free layer provided by this invention comprises a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in sequential contact; the thicknesses of both the first and second ferromagnetic layers are ≤1 nm, and the thickness of the second ferromagnetic layer is less than the thickness of the first ferromagnetic layer; the spacer layer comprises at least two non-magnetic elements. By controlling the thickness of the first and second ferromagnetic layers in the free layer structure to less than 1 nm, this invention effectively improves STT efficiency and reduces write current; simultaneously, the spacer layer in this free layer structure is composed of at least two different non-magnetic elements with strong binding energy, ensuring the stability of the spacer layer structure, suppressing element diffusion caused by the thinning of the magnetic layer, and improving erasure and write resistance.

An interconnected spin majority gate device based on a magnetic tunnel junction comprises, from the surface to the substrate, a top electrode layer, a magnetic pinning layer, an insulating tunneling layer, a first magnetic magnetization free layer FL1, an isolation coupling layer, a second magnetic magnetization free layer FL2, a heavy metal layer, and a bottom electrode layer. The magnetic pinning layer consists of a magnetic layer and a coupled antiferromagnetic layer. An isolation coupling layer is provided between the first and second magnetic magnetization free layers to separate them. The magnetic pinning layer, the insulating tunneling layer, and the magnetic magnetization free layers constitute a magnetic tunnel junction. The magnetization direction of the magnetic magnetization free layers is controlled by the spin-transfer torque effect generated by the current, and logic is implemented by the exchange coupling effect of the interconnected magnetic magnetization free layers. The device includes four dual-magnetization free layer magnetic tunnel junctions sharing a common magnetic magnetization free layer, denoted as the first, second, and third inputs MTJ and the output, respectively. The device has a cross shape with four branches, three of which are input branches and the fourth branch is the output branch.

A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free layer structure of the present application substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers. The lower Hk value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the second magnetic free layer and thus reduces, and even eliminates, write errors.

A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400° C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of 02 and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.

Embodiments of the present application provide a nano-oscillator array based on spin-transfer torque and a manufacturing method therefor, an oscillator network, and a computing device. The nano-oscillator array comprises a seed crystal layer, and a nanopillar shared layer and a nanopillar array that are sequentially formed in a direction away from the seed crystal layer; the nanopillar shared layer comprises at least a first magnetic thin film layer; the nanopillar array comprises a plurality of nanopillars arranged in an array, and each nanopillar correspondingly generates a spin nano-oscillator; and each nanopillar comprises a second magnetic thin film layer and a cap layer that are sequentially arranged in the direction away from the seed crystal layer. The present application can improve in-plane current shunting, and significantly improve the effective current density and the coupling strength of nano-oscillators.

An approach for providing a semiconductor structure for a stacked magnetoresistive random-access memory (MRAM) device that includes a first magnetic tunnel junction on a bottom electrode and at least one second magnetic tunnel junction above the first magnetic tunnel junction. The semiconductor structure includes the first magnetic tunnel junction is a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction of a voltage-controlled magnetic anisotropy (VCMA) MRAM device. The VCMA-MRAM device is composed of a first reference layer, a first tunnel barrier layer, and a first free layer. The semiconductor structure includes the second magnetic tunnel junction that is a spin-transfer torque (STT) magnetic tunnel junction of a STT-MRAM device. The STT-MRAM device is composed of a second reference layer, a second tunnel barrier layer, and a second free layer where the STT magnetic tunnel junction has a smaller cross-sectional area than the VCMA magnetic tunnel junction (MTJ).