49 results about "Half-metal" patented technology

A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

A magnetic sensing element exhibiting a large ΔRA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant λs. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a≦100, and b may represent a composition ratio satisfying 60<b≦100). Consequently, the magnetostriction constant λs and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.

In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.

A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.

For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co2FeAl having a smallest α though not a half-metal.

A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting / controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.

A multiphase thermoelectric material includes a titania-based semiconducting phase and a half-metal conducting phase. The multiphase thermoelectric material is advantageously a nanocomposite material wherein the constituent phases are uniformly distributed and have crystallite sizes ranging from about 10 nm to 800 nm. The titania-based semiconducting phase can be a mixture of sub-stoichiometric phases of titanium oxide that has been partially reduced by the half-metal conducting phase. Methods of forming a multiphase thermoelectric material are also disclosed.

Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting / controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

The invention discloses a novel capacitance plate suspension structure of a differential motion metal capacitance diaphragm capsule and belongs to structures of differential motion metal capacitance diaphragm capsules used in a pressure sensor series of industrial automation products. According to the novel capacitance plate suspension structure, an isolation diaphragm and a protection ring are arranged at the lower end of a metal substrate, a metal pressure guide tube is connected to the inner face of the metal substrate, the other end of the metal pressure guide tube is connected with a ceramic ring and a ceramic cap in a half metal cup body, metal oil filling tubes are arranged at the upper end in glass at the inner end of the half metal cup body, and silicon oil is filled in inner cavities of the metal oil filling tubes. The novel capacitance plate suspension structure solves the problems that an existing differential pressure transmitter is poor in disturbance resistance, measuring precision and stability, and plays the function of insulating electric signals. When pressure to be measured is respectively acted on the insulating diaphragm of the differential motion metal capacitance diaphragm capsule, the pressure is transmitted to the two sides of a central metal diaphragm in the form of liquid pressure transmission through the silicon oil in the cavities of the diaphragm capsule, so that the working principle of the differential motion metal capacitance diaphragm is maintained unchanged, and the disturbance resistance capacity and the stability of a capacitance differential pressure transmitter are greatly improved.

The invention discloses a metal casing of a pre-stranded suspension clamp. The metal casing mainly comprises two half metal casings which are matched and separated, wherein a semi-arc opening of one half metal casing is larger than a semicircle, and the lower end of the opening is provided with more than one convex plug block; the semi-arc opening of the other half metal casing is smaller than the semicircle, and the lower end of the opening is provided with more than one embedding hole; and when the metal casing is used, the pre-stranded suspension clamp can be combined by the following steps of: first wrapping and clamping a group of rubber lined rods at a selected position of a wire; wrapping and fixing the rubber lined rods in a netting way by using more than two small sectioned pre-stranded wires; and wrapping and locking the rods from the exterior by matching two half metal casings. The metal casing of the pre-stranded suspension clamp has the advantages of effectively solving the problems of difficulty, danger and the like encountered in installation, along with simpler and more labor-saving installation, and no need of supporting a heavy hardware fitting at one time.

A magnetic sensing element includes a multilayer film including a pinned magnetic layer in which the magnetization direction is pinned in one direction, a free magnetic layer, and a nonmagnetic layer provided between the pinned magnetic layer and the free magnetic layer. In the magnetic sensing element, at least one of the pinned magnetic layer and the free magnetic layer includes a half-metallic alloy layer and a CoxFe100-x layer is provided between the half-metallic alloy layer and the nonmagnetic layer.

An apparatus for measuring spin polarization via Point Contact Andreev Reflection (PCAR) at a magnet-superconductor junction, with variable magnetic fields and temperature control. A cryostat probe investigates superconducting energy gap and Andreev reflection in superconductor-half metal junctions, in a wide range of magnetic fields and temperature from 2K-300K. The cryostat probe is integrated with a commercial physical properties measurement system. The measurement probe includes a rotary-translation stage with coarse and fine screws that enable a user to make point contacts in a cryogenic, evacuated environment where the point contact junction can be controlled at room temperature by turning a knob. Copper wires are connected as electrical leads from an aluminum housing, descend down to a copper housing, for measurement, when contact is made by tip with a half-metal sample, such as CrO2. External current and voltage meters measure the current-voltage characteristics and data acquisition is performed using computer interface.

The invention discloses a strong coupling frequency selective surface structure insensitive to all angles of incident electromagnetic waves. The strong coupling frequency selective surface structure comprises a plurality of tightly-arranged periodic unit structures, and each periodic unit structure comprises top and bottom layer metal patches, a dielectric plate, an upper half metal via hole and alower half metal via hole; the top and bottom metal patches are respectively attached to the upper and lower surfaces of the dielectric plate and are stereosymmetrically arranged around the center ofthe dielectric plate; each of the top and bottom layer metal patches is formed by connecting a circular patch and a rectangular patch; the circular patches are arranged in the center of the surface of the dielectric plate, the half metal via holes are located in the middle of the upper / lower edge of the surface of the dielectric plate, and the circular patches and the half metal via holes are connected through the rectangular patches. The strong coupling frequency selective surface structure is suitable for frequency selective surface design with ultra-small and ultra-thin structures and wideincident angle stability, the unit size and thickness are extremely small, and the resonant frequency is stable and unchanged within the incident angle range of 0-88 degrees.

An apparatus for measuring spin polarization via Point Contact Andreev Reflection (PCAR) at a magnet-superconductor junction, with variable magnetic fields and temperature control. A cryostat probe investigates superconducting energy gap and Andreev reflection in superconductor-half metal junctions, in a wide range of magnetic fields and temperature from 2K-300K. The cryostat probe is integrated with a commercial physical properties measurement system. The measurement probe includes a rotary-translation stage with coarse and fine screws that enable a user to make point contacts in a cryogenic, evacuated environment where the point contact junction can be controlled at room temperature by turning a knob. Copper wires are connected as electrical leads from an aluminum housing, descend down to a copper housing, for measurement, when contact is made by tip with a half-metal sample, such as CrO2. External current and voltage meters measure the current-voltage characteristics and data acquisition is performed using computer interface.

A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

One embodiment of the present invention provides a switching device that can vary a spin-polarized current based on an input signal. The switching device comprises a first conducting region, a second conducting region, and a half-metal region interposed between the first conducting region and the second conducting region. The half-metal region comprises a material which, at the intrinsic Fermi level, has substantially zero available electronic states in a minority spin channel. Changing the voltage of the half-metal region with respect to the first conducting region moves its Fermi level with respect to the electron energy bands of the first conducting region, which changes the number of available electronic states in the majority spin channel, and in doing so, changes the majority-spin polarized current passing through the switching device.

The invention discloses a zigzag germanene nanobelt-based half-metal material and a preparation method thereof. According to one embodiment of the invention, the method of first principles based on density functional theory is implemented. Firstly, an edge-hydrogenated ideal zigzag germanene nanobelt is optimized. Secondly, the influence of heterogeneous doping on the spin characteristics of the zigzag germanene nanobelt is studied. The spin characteristics of the zigzag germanene nanobelt are regulated and controlled through introducing the boron-nitrogen co-doping technique and changing the doping position thereof. Meanwhile, compared with the ideal zigzag germanene nanobelt, a germanene nanobelt having half-metal characteristics is obtained. According to the technical scheme of the invention, the spin characteristics of the zigzag germanene nanobelt are regulated without the outfield effect of any external electric field or any exchange field, and the germanene nanobelt having half-metal characteristics is obtained only through adjusting the distance between dopant atoms. Therefore, a germanene nanobelt-based spintronic device is realized conveniently.

The invention refers to a powder containing core particles coated with polymer containing metals, metal oxides, metal nitrides or half metal nitrides, and specifically the invention refers to a powder used in a layer-by-layer processing method which selectively fuses areas of each powder layer through electromagnetic energy. Composite particles comprising core particles completely or partially coated with a precipitated polymer, where the d50 median diameter of the core particles is 1 [mu]m or greater and the ratio of the d50 median diameter of the composite particles to the d50 median diameter of the core particles is 1.15 or greater, are provided. A method to prepare the particles includes dissolution of a polymer in a solvent and reprecipitation of the polymer in the presence of a suspension of the core particles. Further provided is a layer by layer moulding process employing the composite particles and mouldings obtained therefrom.

A double perovskite type oxide film is formed on a given single crystalline substrate. Then, the oxide film in set in an oxygen-including atmosphere, thereby to be oxidized. As a result, oxygen is introduced excessively into the oxide film, to form half metal / insulator / half metal junction and thus, create a MR effect therein.

The invention provides an alloy material with a carbon film coated on the surface. The alloy material comprises bottom-layer metal, wherein a carbon film layer, a memory alloy material layer and a half-metal material layer are sequentially arranged on the surface of the bottom-layer metal, the carbon film layer comprises an amorphous phase and a graphite-like phase, the memory alloy material layer is chromium nickel-molybdenum steel, the half-metal material layer is perovskite, the chromium nickel-molybdenum steel accounts for 28-45 percent of the weight of an alloy material main body, and the perovskite accounts for 38-65 percent of the weight of the alloy material main body. The alloy material with the carbon film coated on the surface, provided by the invention, is better in conductivity; the production cost of the metal material is reduced, the economic benefit is increased, and the product quality is improved.

The present invention provides biologically active compounds and methods to obtain biologically active compounds that can be used as photosensitizers for diagnostic and therapeutic applications, particularly for PDT of cancer, infections and other hyperproliferative diseases, fluorescence diagnosis and PDT treatment of non-tumorous indications such as arthritis, inflammatory diseases, viral or bacterial infections, dermatological, ophthalmological or urological disorders. As the compounds exhibit also toxicity against targets (tumor cells, bacteria, inflammation-related cells) without light these biologically active compounds may also be used for the light-independent treatment of such indications. Preferred embodiments of the present invention consist of methods to synthesize metal or half-metal complex structures incorporating one or more substituted 2,3,5,6-tetrafluorophenyl-dipyrromethene (2,3,5,6-tetrafluorophenyldipyrrin) units. These dipyrromethenes (dipyrrins) can carry a variety of different substituents in the 4-position enabling a fine tuning of their biological or amphiphilic / hydrophilic properties. Another object of the present invention is to provide amphiphilic compounds with a higher membrane affinity and increased efficacy.

A double perovskite type oxide film is formed on a given single crystalline substrate. Then, the oxide film in set in an oxygen-including atmosphere, thereby to be oxidized. As a result, oxygen is introduced excessively into the oxide film, to form half metal / insulator / half metal junction and thus, create a MR effect therein.

The invention discloses a high-hardness alloy material which is prepared from a light metal material layer, a half-metal material layer and a rare metal material layer, wherein the light metal material layer is aluminum-magnesium alloy; the half-metal material layer is perovskite; the rare metal material layer is tungsten carbide alloy; the aluminum-magnesium alloy accounts for 12-33% of the mainbody weight of the alloy material; the perovskite accounts for 41-45% of the main body weight of the alloy material; the tungsten carbide alloy accounts for 15-20% of the main body weight of the alloymaterial. The high-hardness alloy material disclosed by the invention has the characteristics of relatively good heat dispersion, relatively strong pressure resistance, ultrahigh hardness and the like.

A kind of Dirac nodal semimetal and its preparation and application method described in the present invention proposes X composed of the VB group transition metal atom X and the V main group atom Y 3 The Dirac nodal spherical semimetal formed by Y alloy material has a tympanic topological surface state, and the Dirac point in the three-dimensional momentum space forms a spherical shell. Experiments on devices (such as spin memory devices SOT-MRAM, magnetic sensors) provide theoretical basis and guidance. The crystal structure of the Dirac nodal semimetal is Cu in the ordered L12 phase 3 Au is the basic structure, and the group VB transition metal atom X and the V main group atom Y form a face-centered cubic structure (fcc) simulation material X 3 Y. Among them, the atoms at the face center are transition metal atoms X of Group VB (such as Nb, Ta), and the atoms at the 8 vertices are the atoms of Group V main group Y (such as As, Sb, Bi).