49 results about "Half-metal" patented technology

A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

A magnetic sensing element exhibiting a large ΔRA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant λs. The free magnetic layer includes a Co₂MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (Ni_aFe_100-a)_bX_100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a≦100, and b may represent a composition ratio satisfying 60<b≦100). Consequently, the magnetostriction constant λs and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.

In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.

A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.

In an embodiment of the invention, a trilayer magnetoresistive sensor comprises an underlayer on which a first free layer is deposited. A barrier layer is then deposited after which a second free layer is deposited. A capping layer is then deposited above second free layer. The first free layer is a layer which includes at least a layer of a nitride of an element including at least one of Fe, Co, or Ni, or a multiple laminate structure of a layer containing a nitride of an element including at least one of Fe, Co, Ni and another ferromagnetic layer containing at least one of Fe, Co, or Ni. The combination of the first and second free layers causes anti-parallel coupling.

An apparatus for measuring spin polarization via Point Contact Andreev Reflection (PCAR) at a magnet-superconductor junction, with variable magnetic fields and temperature control. A cryostat probe investigates superconducting energy gap and Andreev reflection in superconductor-half metal junctions, in a wide range of magnetic fields and temperature from 2K-300K. The cryostat probe is integrated with a commercial physical properties measurement system. The measurement probe includes a rotary-translation stage with coarse and fine screws that enable a user to make point contacts in a cryogenic, evacuated environment where the point contact junction can be controlled at room temperature by turning a knob. Copper wires are connected as electrical leads from an aluminum housing, descend down to a copper housing, for measurement, when contact is made by tip with a half-metal sample, such as CrO₂. External current and voltage meters measure the current-voltage characteristics and data acquisition is performed using computer interface.

The invention discloses a zigzag germanene nanobelt-based half-metal material and a preparation method thereof. According to one embodiment of the invention, the method of first principles based on density functional theory is implemented. Firstly, an edge-hydrogenated ideal zigzag germanene nanobelt is optimized. Secondly, the influence of heterogeneous doping on the spin characteristics of the zigzag germanene nanobelt is studied. The spin characteristics of the zigzag germanene nanobelt are regulated and controlled through introducing the boron-nitrogen co-doping technique and changing the doping position thereof. Meanwhile, compared with the ideal zigzag germanene nanobelt, a germanene nanobelt having half-metal characteristics is obtained. According to the technical scheme of the invention, the spin characteristics of the zigzag germanene nanobelt are regulated without the outfield effect of any external electric field or any exchange field, and the germanene nanobelt having half-metal characteristics is obtained only through adjusting the distance between dopant atoms. Therefore, a germanene nanobelt-based spintronic device is realized conveniently.

A double perovskite type oxide film is formed on a given single crystalline substrate. Then, the oxide film in set in an oxygen-including atmosphere, thereby to be oxidized. As a result, oxygen is introduced excessively into the oxide film, to form half metal/insulator/half metal junction and thus, create a MR effect therein.

The invention provides an alloy material with a carbon film coated on the surface. The alloy material comprises bottom-layer metal, wherein a carbon film layer, a memory alloy material layer and a half-metal material layer are sequentially arranged on the surface of the bottom-layer metal, the carbon film layer comprises an amorphous phase and a graphite-like phase, the memory alloy material layer is chromium nickel-molybdenum steel, the half-metal material layer is perovskite, the chromium nickel-molybdenum steel accounts for 28-45 percent of the weight of an alloy material main body, and the perovskite accounts for 38-65 percent of the weight of the alloy material main body. The alloy material with the carbon film coated on the surface, provided by the invention, is better in conductivity; the production cost of the metal material is reduced, the economic benefit is increased, and the product quality is improved.

The present invention provides biologically active compounds and methods to obtain biologically active compounds that can be used as photosensitizers for diagnostic and therapeutic applications, particularly for PDT of cancer, infections and other hyperproliferative diseases, fluorescence diagnosis and PDT treatment of non-tumorous indications such as arthritis, inflammatory diseases, viral or bacterial infections, dermatological, ophthalmological or urological disorders. As the compounds exhibit also toxicity against targets (tumor cells, bacteria, inflammation-related cells) without light these biologically active compounds may also be used for the light-independent treatment of such indications. Preferred embodiments of the present invention consist of methods to synthesize metal or half-metal complex structures incorporating one or more substituted 2,3,5,6-tetrafluorophenyl-dipyrromethene (2,3,5,6-tetrafluorophenyldipyrrin) units. These dipyrromethenes (dipyrrins) can carry a variety of different substituents in the 4-position enabling a fine tuning of their biological or amphiphilic/hydrophilic properties. Another object of the present invention is to provide amphiphilic compounds with a higher membrane affinity and increased efficacy.