Switching devices based on half-metals

a technology of half-metal and switching device, which is applied in the direction of galvano-magnetic devices, magnetic materials, magnetic bodies, etc., can solve the problems that devices made of mn-doped gaas cannot be operated at room temperature, and the device performance is not good, so as to achieve less reverse biased current

Inactive Publication Date: 2008-01-01
RGT UNIV OF CALIFORNIA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, because of the doping, incoherence of carrier transport can create serious problems in device performance.
Furthermore, the most studied doped cubic semiconductor, Mn-doped GaAs, suffers from a low Curie temperature of 110 K. As a result, devices made of Mn-doped GaAs cannot be operated at room temperature.

Method used

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  • Switching devices based on half-metals
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  • Switching devices based on half-metals

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Embodiment Construction

[0028]The following description is presented to enable any person skilled in the art to make and use the invention, and is provided in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present invention. Thus, the present invention is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

Half Metals

[0029]In half-metals (HM), the polarization of the carriers is complete, i.e., it is contributed entirely by one spin channel at the intrinsic Fermi energy. This is in marked contrast to the usual ferromagnetic metals such as iron in which both spin channels contribute at the intrinsic Fermi energy, resulting in substantially less than 100% polariz...

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Abstract

One embodiment of the present invention provides a switching device that can vary a spin-polarized current based on an input signal. The switching device comprises a first conducting region, a second conducting region, and a half-metal region interposed between the first conducting region and the second conducting region. The half-metal region comprises a material which, at the intrinsic Fermi level, has substantially zero available electronic states in a minority spin channel. Changing the voltage of the half-metal region with respect to the first conducting region moves its Fermi level with respect to the electron energy bands of the first conducting region, which changes the number of available electronic states in the majority spin channel, and in doing so, changes the majority-spin polarized current passing through the switching device.

Description

RELATED APPLICATION[0001]This application hereby claims priority under 35 U.S.C. §119 to U.S. Provisional Patent Application No. 60 / 573,069, filed on 21 May 2004, entitled “Switching devices made of half metals,” by inventors Ching Yao Fong, Meichun Qian, and Lin H. Yang.GOVERNMENT LICENSE RIGHTS[0002]This invention was made with Government support under Grant Nos. 0225007 and 9872053, awarded by the National Science Foundation. The Government has certain rights in this invention.BACKGROUND[0003]1. Field of the Invention[0004]The present invention is related to switching devices. More specifically, the present invention is related to switching devices comprising half-metals.[0005]2. Related Art[0006]Rapid miniaturization of semiconductor devices has dramatically reduced chip feature sizes. Today, manufacturing technologies can fabricate devices that are as small as hundred nanometers. Many experts believe that device dimensions are destined to enter the realm of quantum mechanics.[0...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L43/00H01L29/00H01F1/40H01F10/193H01L29/66H01L31/0328
CPCH01F1/408H01L29/66984H01F1/404H01F10/1936
Inventor FONG, CHING YAOQIAN, MEICHUNYANG, LIN H.
Owner RGT UNIV OF CALIFORNIA
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