209results about "Thin magnetic films" patented technology

The invention discloses a colored magnetic particle preparation method, a colored magnetic particle, a magnetic microcapsule and a magnetic film, and relates to the technical field of magnetic particle preparation. According to the preparation method, ferric salt and an alkaline substance are adopted, a ferroferric oxide precursor precipitation solution is generated through a coprecipitation method, surface modification is conducted through oleic acid, the dispersity and stability of particles in an organic system are enhanced, a solvent is adopted for washing and drying, and the purity and chemical stability of the particles are further improved; subsequently, mixing the modified nano ferroferric oxide, a dye, a high polymer and a functional additive to obtain the colored magnetic particle. The method has the advantages that the preparation process is simple, and the prepared colored magnetic particles are excellent in dispersity, stability and functionality.

The invention provides a resin composition, a magnetic film and application thereof. The resin composition comprises the following components: (A) magnetic filler, (B) epoxy resin, (C) a curing agent, (D) a flexibilizer and (E) polyester polyol, the number average molecular weight of the (E) polyester polyol is 2000 to 3000. According to the resin composition provided by the invention, through screening and synergistic compounding of specific components, the resin composition has relatively high magnetic conductivity and relatively low magnetic loss under high frequency after being cured, and meanwhile, the binding force with a copper layer is relatively high.

A magnetic tunnel junction element and a memory device including the same are provided. The magnetic tunnel junction element includes: a pinned layer and a free layer facing each other; a buffer layer on the pinning layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, in which the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re, or Ta, and the auxiliary layer includes W, Mo, or Ta.

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

The invention provides a magnetic resin composition, a magnetic film and application thereof. The magnetic resin composition comprises (A) a magnetic filler, (B) epoxy resin, (C) a curing agent and (D) a flexibilizer, the magnetic filler (A) comprises carbonyl iron powder (A1), FeSiCr alloy (A2) and iron-based nanocrystals (A3); based on the total mass of the magnetic resin composition as 100%, the content of the (A) magnetic filler is 85% or more; based on 100% of the total mass of the magnetic filler (A), the content of the carbonyl iron powder (A1) is 55%-65%, the content of the FeSiCr alloy (A2) is 15%-25%, and the content of the iron-based nanocrystalline (A3) is 15%-25%. According to the magnetic resin composition and the preparation method thereof, specific types of magnetic fillers are introduced and compounded according to a specific content, so that the magnetic resin composition has relatively high magnetic conductivity and relatively low magnetic loss after being cured, and meanwhile, the binding force with a copper layer is relatively high.

Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate (1401), a seed layer (1403) overlying the substrate, and a nitride layer (1403A) overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer (1403B) outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a first magnetic layer (1405) overlying the templating layer, a tunnel barrier (1409) outward of the first magnetic layer; and a second magnetic layer (1411) outward of the tunnel barrier. The first magnetic layer (1405) includes a Heusler compound and exhibits perpendicular magnetic anisotropy, PMA.

The invention provides a magnetic field measurement system based on laser speckles, which comprises a laser device, a non-contact magnetic field sensor, a condensation unit, an image acquisition unit and a processing unit which are connected in sequence, the laser speckles on the non-contact magnetic field sensor are changed under the action of an external magnetic field, and the changed laser speckles are transmitted to the image acquisition unit through the condensation unit for laser speckle image acquisition; and the processing unit performs image processing on the collected laser speckles to obtain correlation coefficients of the laser speckles, and determines the magnetic field size and change frequency of the external magnetic field according to changes of the correlation coefficients of the laser speckles. The magnetic field measurement sensitivity and accuracy are high, the intensity of a static magnetic field can be measured, and the intensity and change frequency of a dynamic magnetic field can also be measured.

The invention discloses a magnetoresistive random access memory, which mainly includes a first array region and a second array region disposed on a substrate, a first magnetic tunneling junction (MTJ) disposed on the first array region, a first upper electrode disposed on the first MTJ, a second MTJ disposed on the second array region, and a second upper electrode disposed on the second MTJ, wherein the first upper electrode and the second upper electrode comprise different nitrogen-to-carbon ratios.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

An apparatus and method for implementing a probabilistic bit (p-bit) circuit with enhanced tunability is disclosed. The apparatus includes multiple magnetic tunnel junctions (MTJs) connected in series to a drain of a transistor. The apparatus also includes a resistor connected to a source of the transistor. The resistor is of a resistance value that is selected based on an average equivalent resistance value of a series combination of the multiple MTJs. The apparatus includes a comparator configured to receive voltage from the drain (“drain voltage”) and generate an output voltage based on a reference voltage and the drain voltage. The method includes generating, using a first circuitry, a drain voltage that is fluctuating over time, and generating, using a second circuitry, an output voltage that is varying continuously over time by comparing the fluctuating voltage with a reference voltage.

Disclosed is a spin-orbit torque (SOT)-based magnetic tunnel junction, including: a spin-orbit torque active layer formed on a substrate; a magnetization-free layer formed on the spin-orbit torque active layer; a tunnel barrier layer formed on the free magnetic layer; and a magnetization-pinned layer formed on the tunnel barrier layer, wherein the spin-orbit torque active layer is a W-X alloy (where W is tungsten, and X includes at least one of Ti, Zr and Hf or a group III-V semiconductor).

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

A single-crystalline LnBM2O5+δ or LnBM2O5.5+δ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≤δ≤1. Methods of making and using the compound, and devices and compositions including same are also provided.

A soft magnetic alloy ribbon having high corrosion resistance is obtained. The soft magnetic alloy ribbon contains Fe, P, and Si. A maximum point of a concentration of P and a maximum point of a concentration of Si including in oxides is present in a region within 20 nm from the surface, when a concentration distribution of an element contained in the soft magnetic alloy ribbon is measured from a surface toward an interior of the soft magnetic alloy ribbon in a thickness direction.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A magnetoresistive component (100) is provided, comprising at least one magnetoresistive element (110) comprising a layer stack of ferromagnetic layers (112; 114; 116; 118) and non-magnetic layers (113; 115) stacked in a first direction. The layer stack comprises a ferromagnetic layer (112; 118) with a magnetic orientation to be switched. Adjacent to the ferromagnetic layer (112; 118), a first conductor (120-1) extends in a second direction, and a second conductor (120-2) extends in a third direction. The first and second conductors are configured to induce spin-orbit torque (SOT) in the ferromagnetic layer (112; 118). A control circuit (130) is configured to apply a first current pulse to the first conductor (120-1) and a second current pulse to the second conductor (120-2) in a temporally overlapping manner and with different time characteristics.For example, the control circuit (130) may be configured to switch off the second current pulse before the first current pulse is switched off in order to switch the magnetic orientation of the ferromagnetic layer (112; 118).

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is that a magnetic sensor (1) is provided with a non-magnetic substrate (10), and a sensing element (30) provided on the substrate (10), the sensing element (30) comprising a soft magnetic layer (101) of an amorphous alloy with Co as the main component, having a saturation magnetization of 300 emu / cc or more and 650 emu / cc or less, and the sensing element (30) having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction intersecting the long side direction, and sensing a magnetic field by the magnetoimpedance effect.

The application discloses a preparation strategy of a single-layer magnetic cage lattice film material, and belongs to the technical field of nanometer materials.The application comprises the following steps: in an ultrahigh vacuum environment, Nb and Te are evaporated and deposited onto a substrate according to a certain deposition beam flow ratio by using a molecular beam epitaxy process, chemical bonding between the Nb and Te is realized through annealing treatment, and a single-layer magnetic cage lattice NbTe2 film material is obtained.The application realizes the preparation of the single-layer cage lattice NbTe2, and the single-layer cage lattice NbTe2 is subjected to atomic structure and magnetic characterization by means of a characterization system, so that the application has excellent scientific research value and wide application potential, and provides a new platform for in-depth scientific research and exploration of novel quantum physical properties.

A magnetoresistive sensor (100; 200) comprising:a first non-magnetic layer (112);a second non-magnetic layer (118);and a magnetic free double layer (113) disposed between the first non-magnetic layer (112) and the second non-magnetic layer (118), wherein the magnetic free double layer (113) comprises a first magnetic free layer (114) disposed adjacent to a second magnetic free layer (116), wherein the first magnetic free layer (114) is disposed adjacent to the first non-magnetic layer (112) and the second magnetic free layer (116) is disposed adjacent to the second non-magnetic layer (118), wherein the second non-magnetic layer (118) is made of a non-magnetic material having an atomic radius that does not deviate by more than 10% of an atomic radius of at least one of the first magnetic free layer (114) and the second magnetic free layer (116), and wherein the non-magnetic material is selected from one of magnesium, indium, and tin.

The apparatus for magnetizing the magnetized fixed layer and heating the antiferromagnetic layer is simplified. [Solution] A laminated film 601 is formed having a ferromagnetic layer 631 and an antiferromagnetic layer 66, with the ferromagnetic layer 631 and the antiferromagnetic layer 66 in contact with each other in a first direction Z (Step S1). Next, a magnetic field in the first direction Z is applied to the laminated film 601 to create a magnetization-fixed layer 63 from the ferromagnetic layer 631, in which the magnetization direction is fixed with respect to the external magnetic field (Step S2). After stopping the application of the magnetic field, the laminated film 601 is heated to a temperature above the blocking temperature of the antiferromagnetic layer 66 to create a magnetic laminate 6 (Step S3).

To provide a magnon junction, a magnon random access memory, a microwave oscillator, a detector, and an electronic apparatus.SOLUTION: A magnon junction includes: a first electrode layer formed of a nonmagnetic conductive material; a free magnetic layer provided on the first electrode layer and formed of a ferromagnetic conductive material; an antiferromagnetic barrier layer provided on the free magnetic layer and formed of an antiferromagnetic insulating material; a reference magnetic layer provided on the antiferromagnetic barrier layer and formed of the ferromagnetic conductive material; and a second electrode layer provided on the reference magnetic layer and formed of the nonmagnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is fixed along a perpendicular direction. The free magnetic layer has the perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is reversible along a perpendicular direction. The antiferromagnetic barrier layer has the perpendicular magnetic anisotropy or the perpendicular magnetic moment.SELECTED DRAWING: Figure 3

A method of fabricating high magnetic anisotropy materials using a metallic high entropy alloy is described in this disclosure. Targets of metals or targets of alloys comprising at least one elemental ferromagnetic material are used in a sputtering tool to deposit on a substrate thin films of high entropy alloys. The sputtering targets may be elemental targets or they may comprise multiple metals. In addition, targets of materials such as boron, platinum, or aluminum may be included in the sputtering process to enhance magnetic properties of the resultant thin films. The sputtering may take place by co-sputtering multiple targets simultaneously or by alternatively sputtering layers from the targets. After sputtering the materials are heated through a rapid thermal annealing process to a high temperature, which facilitates the formation of the desired crystalline phases which exhibit high magnetocrystalline anisotropy.

A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a first element group. The second ferromagnetic oxide layer includes an oxide of an alloy of the one of iron and cobalt included in the second ferromagnetic oxide layer with a first element, which has a standard electrode potential lower than that of iron or cobalt and that of the one element of the first element group included in the second ferromagnetic layer.

In implementations described herein, processes, methods, and techniques are described for the detection of analytes in a sample using multiplexing methods for giant magnetoresistance sensors.

The present invention is entitled "Material Having Both Negative Spin Polarization and Negative Anisotropy." Aspects of the present disclosure generally relate to spintronic devices for use in magnetic media drives, magnetoresistive random access memory devices, magnetic sensors, or magnetic recording write heads. The spintronic device includes a multilayer structure having a negative anisotropy field and a negative spin polarization. The multilayer structure includes a plurality of layers, each of the plurality of layers including a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first sublayers and the second sublayers alternate. The negative anisotropy field of the multilayer structure is between about -0.5 T and about -0.8 T, and the effective magnetization of the multilayer structure is between about 2.4 T and about 2.8 T.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.