79results about "Thin magnetic films" patented technology

The invention provides a resin composition, a magnetic film and application thereof. The resin composition comprises the following components: (A) magnetic filler, (B) epoxy resin, (C) a curing agent, (D) a flexibilizer and (E) polyester polyol, the number average molecular weight of the (E) polyester polyol is 2000 to 3000. According to the resin composition provided by the invention, through screening and synergistic compounding of specific components, the resin composition has relatively high magnetic conductivity and relatively low magnetic loss under high frequency after being cured, and meanwhile, the binding force with a copper layer is relatively high.

The invention provides a magnetic resin composition, a magnetic film and application thereof. The magnetic resin composition comprises (A) a magnetic filler, (B) epoxy resin, (C) a curing agent and (D) a flexibilizer, the magnetic filler (A) comprises carbonyl iron powder (A1), FeSiCr alloy (A2) and iron-based nanocrystals (A3); based on the total mass of the magnetic resin composition as 100%, the content of the (A) magnetic filler is 85% or more; based on 100% of the total mass of the magnetic filler (A), the content of the carbonyl iron powder (A1) is 55%-65%, the content of the FeSiCr alloy (A2) is 15%-25%, and the content of the iron-based nanocrystalline (A3) is 15%-25%. According to the magnetic resin composition and the preparation method thereof, specific types of magnetic fillers are introduced and compounded according to a specific content, so that the magnetic resin composition has relatively high magnetic conductivity and relatively low magnetic loss after being cured, and meanwhile, the binding force with a copper layer is relatively high.

The invention discloses a magnetoresistive random access memory, which mainly includes a first array region and a second array region disposed on a substrate, a first magnetic tunneling junction (MTJ) disposed on the first array region, a first upper electrode disposed on the first MTJ, a second MTJ disposed on the second array region, and a second upper electrode disposed on the second MTJ, wherein the first upper electrode and the second upper electrode comprise different nitrogen-to-carbon ratios.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is that a magnetic sensor (1) is provided with a non-magnetic substrate (10), and a sensing element (30) provided on the substrate (10), the sensing element (30) comprising a soft magnetic layer (101) of an amorphous alloy with Co as the main component, having a saturation magnetization of 300 emu / cc or more and 650 emu / cc or less, and the sensing element (30) having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction intersecting the long side direction, and sensing a magnetic field by the magnetoimpedance effect.

The application discloses a preparation strategy of a single-layer magnetic cage lattice film material, and belongs to the technical field of nanometer materials.The application comprises the following steps: in an ultrahigh vacuum environment, Nb and Te are evaporated and deposited onto a substrate according to a certain deposition beam flow ratio by using a molecular beam epitaxy process, chemical bonding between the Nb and Te is realized through annealing treatment, and a single-layer magnetic cage lattice NbTe2 film material is obtained.The application realizes the preparation of the single-layer cage lattice NbTe2, and the single-layer cage lattice NbTe2 is subjected to atomic structure and magnetic characterization by means of a characterization system, so that the application has excellent scientific research value and wide application potential, and provides a new platform for in-depth scientific research and exploration of novel quantum physical properties.

The apparatus for magnetizing the magnetized fixed layer and heating the antiferromagnetic layer is simplified. [Solution] A laminated film 601 is formed having a ferromagnetic layer 631 and an antiferromagnetic layer 66, with the ferromagnetic layer 631 and the antiferromagnetic layer 66 in contact with each other in a first direction Z (Step S1). Next, a magnetic field in the first direction Z is applied to the laminated film 601 to create a magnetization-fixed layer 63 from the ferromagnetic layer 631, in which the magnetization direction is fixed with respect to the external magnetic field (Step S2). After stopping the application of the magnetic field, the laminated film 601 is heated to a temperature above the blocking temperature of the antiferromagnetic layer 66 to create a magnetic laminate 6 (Step S3).

To provide a magnon junction, a magnon random access memory, a microwave oscillator, a detector, and an electronic apparatus.SOLUTION: A magnon junction includes: a first electrode layer formed of a nonmagnetic conductive material; a free magnetic layer provided on the first electrode layer and formed of a ferromagnetic conductive material; an antiferromagnetic barrier layer provided on the free magnetic layer and formed of an antiferromagnetic insulating material; a reference magnetic layer provided on the antiferromagnetic barrier layer and formed of the ferromagnetic conductive material; and a second electrode layer provided on the reference magnetic layer and formed of the nonmagnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is fixed along a perpendicular direction. The free magnetic layer has the perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is reversible along a perpendicular direction. The antiferromagnetic barrier layer has the perpendicular magnetic anisotropy or the perpendicular magnetic moment.SELECTED DRAWING: Figure 3

In implementations described herein, processes, methods, and techniques are described for the detection of analytes in a sample using multiplexing methods for giant magnetoresistance sensors.

A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer (22) located beneath a chemical templating layer (24b, 24u) that is wider than the magnetic tunnel junction (MTJ) structure (26, 28, 30) that is located on the chemical templating layer. Redeposited metallic material (36) is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

Disclosed herein is an improved SOT-MRAM device and method of manufacture thereof. A memory device includes a first structure that includes a magnetic tunnel junction stack and a spin-orbit torque layer. The spin-orbit torque layer is formed on the magnetic tunnel junction stack. A dielectric capping layer is formed over the spin-orbit torque layer. A metal layer is formed on top of the first structure. The metal layer surrounds each of the spin-orbit torque layer and the dielectric capping layer. The metal layer is in direct contact with a sidewall of the spin-orbit torque layer.

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

A magnetic memory device includes a device isolation layer on a substrate and defining an active region; a source region and a drain region in the active region of the substrate and separated from each other; a channel portion in the active region of the substrate and between the source region and the drain region; a spin-orbit torque (SOT) inducing layer on the channel portion of the substrate; a magnetic tunnel junction (MTJ) structure on the SOT inducing layer, the MTJ structure including a free layer on the SOT inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier layer; a word line on the MTJ structure; a source line electrically connected to the source region; and a bit line electrically connected to the drain region.

The present disclosure concerns a magnetoresistive sensor (MR) element, comprising a reference layer having a reference magnetization; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field, the sense magnetization being reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The MR element further comprises a dipolar assisting layer, configured to generate a dipolar stray field oriented substantially out-of-plane, such that the dipolar stray field is added to the out-of-plane external magnetic field, resulting in an effective magnetic field that is larger than and proportional to the external magnetic field. The present disclosure further concerns a magnetic sensor device comprising the MR element.

A method for fabricating a magnetic tunnel junction structure, hereinafter referred to as an MTJ structure, comprising: depositing an MTJ stack on a bottom electrode (10), the MTJ stack comprising at least a seed layer (12), a pinned layer (14) on the seed layer (12), a barrier layer (16) on the pinned layer (14), and a free layer (18) on the barrier layer (16); depositing a top electrode layer (20) on the MTJ stack; depositing a hard mask (22) on the top electrode layer (20); first etching the top electrode layer (20) and the hard mask (22); then second etching of the MTJ stack not covered by the hard mask (22), and stopping the second etching at or within the seed layer (12);then depositing an encapsulation layer (26) over the partially etched MTJ stack and etching away the encapsulation layer (26) on horizontal surfaces, leaving a self-aligning hard mask (28) on the sidewalls of the partially etched MTJ stack, wherein the self-aligning hard mask (28) is arranged along the sidewalls of the pinned layer (14) and extends to and physically contacts a top surface of the nucleation layer (12); then a third etching of the remaining MTJ stack not covered by the hard mask layer (22) and the self-aligning hard mask (28) to complete the MTJ structure, wherein after the third etching the self-aligning hard mask (28) covers the sidewalls of the free layer (18), the barrier layer (16) and the pinned layer (14) and does not contact the sidewall of the top electrode layer (20).

A method is presented to determine the degradation dependence of electrical and magnetic variables in TMR magnetic field sensors under accelerated life testing. The present disclosure relates to a method for calculating the performance of a magnetic element (2) having a reference bilayer (244) comprising a ferromagnetic reference layer (21) having a reference magnetization (210) and an antiferromagnetic layer (24) that pins the reference magnetization (210) by exchange bias, the antiferromagnetic layer (24) comprising a metallic polycrystalline material having a grain volume distribution. The method includes: calculating the performance of a magnetic element (2) having a reference magnetization (210) and an antiferromagnetic layer (244) that pins the reference magnetization (210) by exchange bias, the antiferromagnetic layer (24) comprising a metallic polycrystalline material having a grain volume distribution. ex ) as a function of temperature; The measured exchange bias magnetic field (H ex ) with a particle volume distribution function; Calculating the in-plane variation in the orientation of the reference magnetization (210) as a function of the orientation of the exposed magnetic field (H); and calculating the exchange bias magnetic field (H ex ) and Equipped with.

An embodiment of the invention provides a magnetoresistive random access memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium oxide (MgO); and a free layer, wherein the free layer includes a first cobalt iron boron (CoFeB) layer on top of the tunnel barrier layer; the spacing layer is positioned on the top of the first CoFeB layer; the second CoFeB layer is positioned on the top of the spacing layer; and a cap layer of MgO on top of the second CoFeB layer. Further, the first CoFeB layer and the second CoFeB layer are substantially depleted of boron (B) to respectively include a first region adjacent to the tunnel barrier layer and the cap layer, respectively, and a second region adjacent to the spacer layer, where the first region of the first CoFeB layer and the second CoFeB layer includes crystalline ferrocobalt (CoFe), and the second region of the first CoFeB layer and the second CoFeB layer includes an amorphous CoFe alloy.

The invention provides a preparation method of an electromechanical coupling micro-nano device and the electromechanical coupling micro-nano device, and is applied to the technical field of micro-nano manufacturing. The preparation method comprises the following steps: forming a device structure layer on a first side of a substrate, wherein the device structure layer comprises or is preset with a movable structure region and a fixed structure region; a patterned mask aligned with the substrate is fixed on the device structure layer, the pattern of the mask is provided with an opening, and the opening exposes the first area in the movable structure area; depositing a permanent magnet thin film on the first area through the opening of the mask, and removing the mask after deposition; forming a functional unit on a second region different from the first region in the movable structure region or in the fixed structure region, and forming an interconnection structure electrically connected with the functional unit on the fixed structure region; and partially or completely removing the substrate below the movable structure region in the device structure layer, and forming a cavity below the movable structure region to release part of the movable structure region including the first region.

A light detection and ranging (LIDAR) system 500 is provided that includes first and second optical scanning mirrors 506, 508 to steer a laser beam emitted from the tip of an optical fiber 504 to scan a scene 510, and collect light incident upon any objects in the scene that is returned to the fiber tip 504. The LIDAR system 500 further includes a re-imaging lens 512 located between the optical fiber and scanning mirror 506, and an optic 514 located between the scanning mirror and the scene. The re-imaging lens 512 focuses the laser beam emitted from the optical fiber 504 on or close to the first scanning mirror's center of rotation and thereby re-image the fiber tip at or close to the center of rotation, from which the laser beam is reflected as a divergent laser beam. And the optic is configured to collimate or focus the divergent laser beam from the first scanning mirror 506 that is launched toward the scene 510. The first and second scanning mirrors 506, 508 rotate along orthogonal axes to steer the laser beam across the scene 510 according to a scanning pattern. In some examples, the first scanning mirror 506 is rotatable with a faster angular velocity than the second scanning mirror 508 to scan the scene 510 according to a scanning pattern. In some examples, the optic is a collimator 514 which may alternatively be located between the second scanning mirror 508 and the scene 510. In other examples, the collimator 514 may be replaced with a focus lens configured to focus the divergent laser beam from the scanning mirror to produce a focused laser beam.

Magnetic storage unit comprising: a magnetic tunnel contact column comprising a tunnel barrier layer (22) arranged between a synthetic antiferromagnetic reference layer structure (10) and a magnetic free layer (24), wherein the synthetic antiferromagnetic reference layer structure comprises a polarizing magnetic layer (20) magnetically interacting with a stack of magnetic reference layers comprising a first magnetic reference layer (16) and a second magnetic reference layer (12), wherein the polarizing magnetic layer (20) forms an interface with the tunnel barrier layer (22) and has a ferromagnetic resonant frequency peak substantially overlapping a ferromagnetic resonant frequency peak of at least the first magnetic reference layer (16).

Spin diode device (100; 300; 500) configured to detect a microwave signal oscillating at a first target oscillation frequency or a second target oscillation frequency, the spin diode device (100; 300; 500) comprising: a magnetic tunnel contact stack (150) arranged between a lower electrode (130) and an upper electrode (140), the magnetic tunnel contact stack (150) comprising: a lower magnetic layer (102) with a lower magnetic film (312); a tunnel barrier layer (104) above the lower magnetic layer (102), wherein the tunnel barrier layer (104) comprises an insulating material; and an upper magnetic layer (106) above the tunnel barrier layer (104), wherein the upper magnetic layer (106) comprises an upper magnetic film (322); wherein each of the lower magnetic film (312) and the upper magnetic film (322) has a perpendicular magnetic anisotropy, wherein the lower magnetic film (312) comprises a first strength of perpendicular magnetic anisotropy corresponding to a first natural ferromagnetic resonance frequency, wherein the first natural ferromagnetic resonance frequency corresponds to the first target oscillation frequency, wherein the upper magnetic film (322) comprises a second strength of perpendicular magnetic anisotropy corresponding to a second natural ferromagnetic resonance frequency, wherein the second natural ferromagnetic resonance frequency corresponds to the second target oscillation frequency, where the second strength of perpendicular magnetic anisotropy differs from the first strength of perpendicular magnetic anisotropy, and where the second natural ferromagnetic resonance frequency differs from the first natural ferromagnetic resonance frequency.

This reception device is provided with a magnetic element which is provided with a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and in which light containing an optical signal having a change in light intensity is irradiated to the first ferromagnetic layer so as to generate a magnetic signal on the basis of an output voltage from the magnetic element. The magnetic element is configured so as to receive the optical signal, and the intensity of the light irradiated to the first ferromagnetic layer is converted into an output voltage from the magnetic element.

Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic tunnel junction (150), involves forming a transition metal layer (130) in the via by atomic layer deposition. The via optionally includes a tantalum-rich layer (140) above, and / or a cap layer (115) below, the transition metal layer, and may have a diameter less than or equal than a diameter of the magnetoresistive stack device.

To enhance at least one of magnetic anisotropy and saturation magnetization of an FePt-based magnetic material.SOLUTION: Er or Tm is added to FePt having a L10 structure.SELECTED DRAWING: Figure 1

The present invention relates to a magnetoresistive sensor (100) sensitive to out-of-plane applied magnetic fields, comprising: a sensing layer (106); a reference layer (104) with fixed magnetization, the direction of the fixed magnetization being perpendicular to the plane of the reference layer; a non-magnetic spacer layer (105) separating the sensing layer (106) and the reference layer (104); the magnetoresistive sensor comprising: a sensing layer (106) having a magnetization vortex configuration spontaneously without an applied magnetic field, the vortex core diameter changing in the presence of an applied magnetic field perpendicular to the plane of the reference layer (104).

The application discloses a magnetic storage unit, which comprises a first electrode, a transition combination layer, a magnetic tunnel junction and a second electrode from bottom to top; the first electrode and the second electrode are used for being connected with an external circuit and controlling a resistance state of the magnetic tunnel junction; and the transition combination layer comprises a boron providing layer and a boron adsorption buffer layer which are arranged in a laminated mode. By arranging the transition combination layer, stress problems caused by lattice structure mismatching between a metal electrode and the magnetic tunnel junction are eliminated, a better mother plate is provided for growth of the magnetic tunnel junction, and the number of defects and internal stress in the magnetic tunnel junction are reduced. In a high-temperature environment, boron element diffusion and adsorption of the boron providing layer and the boron adsorption buffer layer occur, and the process can effectively slow down interface diffusion of other film layer materials in the magnetic tunnel junction in the high-temperature environment, and the interface structure quality of the magnetic tunnel junction is improved. The application also provides a magnetic storage device with the beneficial effects.