281results about "Thin magnetic films" patented technology

Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.

An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.

The invention discloses a colored magnetic particle preparation method, a colored magnetic particle, a magnetic microcapsule and a magnetic film, and relates to the technical field of magnetic particle preparation. According to the preparation method, ferric salt and an alkaline substance are adopted, a ferroferric oxide precursor precipitation solution is generated through a coprecipitation method, surface modification is conducted through oleic acid, the dispersity and stability of particles in an organic system are enhanced, a solvent is adopted for washing and drying, and the purity and chemical stability of the particles are further improved; subsequently, mixing the modified nano ferroferric oxide, a dye, a high polymer and a functional additive to obtain the colored magnetic particle. The method has the advantages that the preparation process is simple, and the prepared colored magnetic particles are excellent in dispersity, stability and functionality.

A magnetic tunnel junction device includes a pillar structure including, from bottom to top, a bottom electrode and a magnetic tunnel junction structure, a top electrode overlying the magnetic tunnel junction structure, and a dielectric metal oxide layer extending from a sidewall of the pillar structure to a sidewall of the top electrode. The magnetic tunnel junction structure contains a reference magnetization layer including a first ferromagnetic material, a tunnel barrier layer, and a free magnetization layer including a second ferromagnetic material. The top electrode includes a metallic material containing a nonmagnetic metal element. The dielectric metal oxide layer may be formed by performing an oxidation process that oxidizes a residual metal film after a focused ion beam etch process, and eliminates conductive paths from surfaces of the pillar structure.

The invention provides a resin composition, a magnetic film and application thereof. The resin composition comprises the following components: (A) magnetic filler, (B) epoxy resin, (C) a curing agent, (D) a flexibilizer and (E) polyester polyol, the number average molecular weight of the (E) polyester polyol is 2000 to 3000. According to the resin composition provided by the invention, through screening and synergistic compounding of specific components, the resin composition has relatively high magnetic conductivity and relatively low magnetic loss under high frequency after being cured, and meanwhile, the binding force with a copper layer is relatively high.

A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu / cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A / m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

A magnetic tunnel junction element and a memory device including the same are provided. The magnetic tunnel junction element includes: a pinned layer and a free layer facing each other; a buffer layer on the pinning layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, in which the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re, or Ta, and the auxiliary layer includes W, Mo, or Ta.

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

The invention provides a magnetic resin composition, a magnetic film and application thereof. The magnetic resin composition comprises (A) a magnetic filler, (B) epoxy resin, (C) a curing agent and (D) a flexibilizer, the magnetic filler (A) comprises carbonyl iron powder (A1), FeSiCr alloy (A2) and iron-based nanocrystals (A3); based on the total mass of the magnetic resin composition as 100%, the content of the (A) magnetic filler is 85% or more; based on 100% of the total mass of the magnetic filler (A), the content of the carbonyl iron powder (A1) is 55%-65%, the content of the FeSiCr alloy (A2) is 15%-25%, and the content of the iron-based nanocrystalline (A3) is 15%-25%. According to the magnetic resin composition and the preparation method thereof, specific types of magnetic fillers are introduced and compounded according to a specific content, so that the magnetic resin composition has relatively high magnetic conductivity and relatively low magnetic loss after being cured, and meanwhile, the binding force with a copper layer is relatively high.

Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.

A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:Δ⁢M=M⁢sF⁢M⁢2⁢tF⁢M⁢2-M⁢sF⁢M⁢1⁢tF⁢M⁢1M⁢sF⁢M⁢2⁢tF⁢M⁢2+M⁢sF⁢M⁢1⁢tF⁢M⁢1wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate (1401), a seed layer (1403) overlying the substrate, and a nitride layer (1403A) overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer (1403B) outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a first magnetic layer (1405) overlying the templating layer, a tunnel barrier (1409) outward of the first magnetic layer; and a second magnetic layer (1411) outward of the tunnel barrier. The first magnetic layer (1405) includes a Heusler compound and exhibits perpendicular magnetic anisotropy, PMA.

The invention provides a magnetic field measurement system based on laser speckles, which comprises a laser device, a non-contact magnetic field sensor, a condensation unit, an image acquisition unit and a processing unit which are connected in sequence, the laser speckles on the non-contact magnetic field sensor are changed under the action of an external magnetic field, and the changed laser speckles are transmitted to the image acquisition unit through the condensation unit for laser speckle image acquisition; and the processing unit performs image processing on the collected laser speckles to obtain correlation coefficients of the laser speckles, and determines the magnetic field size and change frequency of the external magnetic field according to changes of the correlation coefficients of the laser speckles. The magnetic field measurement sensitivity and accuracy are high, the intensity of a static magnetic field can be measured, and the intensity and change frequency of a dynamic magnetic field can also be measured.

The present invention relates to a magnetic heterojunction structure and a method for controlling and realizing logic and multi-state storage functions, which comprises, from bottom to top, a substrate, an in-plane antiferromagnetic layer, an in-plane ferromagnetic layer, a non-magnetic layer, a perpendicular ferromagnetic layer, and a perpendicular antiferromagnetic layer; the in-plane ferromagnetic layer and the perpendicular ferromagnetic layer are coupled together through the intermediate non-magnetic layer; the in-plane ferromagnetic layer and the perpendicular antiferromagnetic layer have an in-plane exchange bias, i.e., an in-plane exchange bias; the in-plane antiferromagnetic layer and the perpendicular antiferromagnetic layer have an out-of-plane exchange bias, i.e., an out-of-plane exchange bias. Effectively controlling the in-plane exchange bias and out-of-plane exchange bias effects simultaneously in a single magnetic heterojunction not only greatly expands the degree of freedom in the design of new spin electronic devices, but is also expected to promote the research and development of three-dimensional multifunctional spin electronic devices.

The invention discloses a magnetoresistive random access memory, which mainly includes a first array region and a second array region disposed on a substrate, a first magnetic tunneling junction (MTJ) disposed on the first array region, a first upper electrode disposed on the first MTJ, a second MTJ disposed on the second array region, and a second upper electrode disposed on the second MTJ, wherein the first upper electrode and the second upper electrode comprise different nitrogen-to-carbon ratios.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

This spin inductor includes a wiring layer, a first ferromagnetic layer in contact with a first surface of the wiring layer, and a second ferromagnetic layer in contact with a second surface facing the first surface of the wiring layer.

This disclosure is directed to an electronic identification card or electronic card having various features. The electronic card may include an integrated circuit and a contact plate for electrically interfacing with the integrated circuit. The contact plate may include an array of terminal electrodes that are offset with respect to the edges of the contact plate. The electronic card may be coated with a coating layer that extends at least partially over a ferromagnetic element or film. The electronic card may also include a metal substrate having exposed chamfer portions that may provide a visual contrast to the coating layer and also improve the handling and use of the electronic card.

An apparatus and method for implementing a probabilistic bit (p-bit) circuit with enhanced tunability is disclosed. The apparatus includes multiple magnetic tunnel junctions (MTJs) connected in series to a drain of a transistor. The apparatus also includes a resistor connected to a source of the transistor. The resistor is of a resistance value that is selected based on an average equivalent resistance value of a series combination of the multiple MTJs. The apparatus includes a comparator configured to receive voltage from the drain (“drain voltage”) and generate an output voltage based on a reference voltage and the drain voltage. The method includes generating, using a first circuitry, a drain voltage that is fluctuating over time, and generating, using a second circuitry, an output voltage that is varying continuously over time by comparing the fluctuating voltage with a reference voltage.

Disclosed is a spin-orbit torque (SOT)-based magnetic tunnel junction, including: a spin-orbit torque active layer formed on a substrate; a magnetization-free layer formed on the spin-orbit torque active layer; a tunnel barrier layer formed on the free magnetic layer; and a magnetization-pinned layer formed on the tunnel barrier layer, wherein the spin-orbit torque active layer is a W-X alloy (where W is tungsten, and X includes at least one of Ti, Zr and Hf or a group III-V semiconductor).

Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium-oxide (MgO); and a free layer, where the free layer includes a first cobalt-iron-boron (CoFeB) layer on top of the tunnel barrier layer; a spacer layer on top of the first CoFeB layer; a second CoFeB layer on top of the spacer layer; and a capping layer of MgO on top of the second CoFeB layer. Additionally, the first and the second CoFeB layer are substantially depleted of boron (B) to include respectively a first region adjacent to the tunnel barrier layer and the capping layer respectively and a second region adjacent to the spacer layer, where the first regions of the first and the second CoFeB layer include crystallized cobalt-iron (CoFe) and the second regions of the first and the second CoFeB layer include amorphous CoFe alloy.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

A single-crystalline LnBM2O5+δ or LnBM2O5.5+δ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≤δ≤1. Methods of making and using the compound, and devices and compositions including same are also provided.

A soft magnetic alloy ribbon having high corrosion resistance is obtained. The soft magnetic alloy ribbon contains Fe, P, and Si. A maximum point of a concentration of P and a maximum point of a concentration of Si including in oxides is present in a region within 20 nm from the surface, when a concentration distribution of an element contained in the soft magnetic alloy ribbon is measured from a surface toward an interior of the soft magnetic alloy ribbon in a thickness direction.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A magnetoresistive component (100) is provided, comprising at least one magnetoresistive element (110) comprising a layer stack of ferromagnetic layers (112; 114; 116; 118) and non-magnetic layers (113; 115) stacked in a first direction. The layer stack comprises a ferromagnetic layer (112; 118) with a magnetic orientation to be switched. Adjacent to the ferromagnetic layer (112; 118), a first conductor (120-1) extends in a second direction, and a second conductor (120-2) extends in a third direction. The first and second conductors are configured to induce spin-orbit torque (SOT) in the ferromagnetic layer (112; 118). A control circuit (130) is configured to apply a first current pulse to the first conductor (120-1) and a second current pulse to the second conductor (120-2) in a temporally overlapping manner and with different time characteristics.For example, the control circuit (130) may be configured to switch off the second current pulse before the first current pulse is switched off in order to switch the magnetic orientation of the ferromagnetic layer (112; 118).

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.