145results about "Thin magnetic films" patented technology

The invention provides a resin composition, a magnetic film and application thereof. The resin composition comprises the following components: (A) magnetic filler, (B) epoxy resin, (C) a curing agent, (D) a flexibilizer and (E) polyester polyol, the number average molecular weight of the (E) polyester polyol is 2000 to 3000. According to the resin composition provided by the invention, through screening and synergistic compounding of specific components, the resin composition has relatively high magnetic conductivity and relatively low magnetic loss under high frequency after being cured, and meanwhile, the binding force with a copper layer is relatively high.

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

The invention provides a magnetic resin composition, a magnetic film and application thereof. The magnetic resin composition comprises (A) a magnetic filler, (B) epoxy resin, (C) a curing agent and (D) a flexibilizer, the magnetic filler (A) comprises carbonyl iron powder (A1), FeSiCr alloy (A2) and iron-based nanocrystals (A3); based on the total mass of the magnetic resin composition as 100%, the content of the (A) magnetic filler is 85% or more; based on 100% of the total mass of the magnetic filler (A), the content of the carbonyl iron powder (A1) is 55%-65%, the content of the FeSiCr alloy (A2) is 15%-25%, and the content of the iron-based nanocrystalline (A3) is 15%-25%. According to the magnetic resin composition and the preparation method thereof, specific types of magnetic fillers are introduced and compounded according to a specific content, so that the magnetic resin composition has relatively high magnetic conductivity and relatively low magnetic loss after being cured, and meanwhile, the binding force with a copper layer is relatively high.

The invention discloses a magnetoresistive random access memory, which mainly includes a first array region and a second array region disposed on a substrate, a first magnetic tunneling junction (MTJ) disposed on the first array region, a first upper electrode disposed on the first MTJ, a second MTJ disposed on the second array region, and a second upper electrode disposed on the second MTJ, wherein the first upper electrode and the second upper electrode comprise different nitrogen-to-carbon ratios.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

Disclosed is a spin-orbit torque (SOT)-based magnetic tunnel junction, including: a spin-orbit torque active layer formed on a substrate; a magnetization-free layer formed on the spin-orbit torque active layer; a tunnel barrier layer formed on the free magnetic layer; and a magnetization-pinned layer formed on the tunnel barrier layer, wherein the spin-orbit torque active layer is a W-X alloy (where W is tungsten, and X includes at least one of Ti, Zr and Hf or a group III-V semiconductor).

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is a magnetic sensor characterized by comprising: a non-magnetic substrate; a sensing element provided on the substrate, the sensing element containing a soft magnetic body and having a long side direction and a short side direction, the sensing element having a uniaxial magnetic anisotropy in a direction intersecting the long side direction and sensing a magnetic field through the magnetoimpedance effect; and a protruding portion protruding from an end portion of the long side direction of the sensing element, the protruding portion containing a soft magnetic body.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A magnetoresistive component (100) is provided, comprising at least one magnetoresistive element (110) comprising a layer stack of ferromagnetic layers (112; 114; 116; 118) and non-magnetic layers (113; 115) stacked in a first direction. The layer stack comprises a ferromagnetic layer (112; 118) with a magnetic orientation to be switched. Adjacent to the ferromagnetic layer (112; 118), a first conductor (120-1) extends in a second direction, and a second conductor (120-2) extends in a third direction. The first and second conductors are configured to induce spin-orbit torque (SOT) in the ferromagnetic layer (112; 118). A control circuit (130) is configured to apply a first current pulse to the first conductor (120-1) and a second current pulse to the second conductor (120-2) in a temporally overlapping manner and with different time characteristics.For example, the control circuit (130) may be configured to switch off the second current pulse before the first current pulse is switched off in order to switch the magnetic orientation of the ferromagnetic layer (112; 118).

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The present invention relates to a magnetic sensor. The object of the present invention is to improve the sensitivity of a magnetic sensor utilizing the magnetoimpedance effect. The solution of the present invention is that a magnetic sensor (1) is provided with a non-magnetic substrate (10), and a sensing element (30) provided on the substrate (10), the sensing element (30) comprising a soft magnetic layer (101) of an amorphous alloy with Co as the main component, having a saturation magnetization of 300 emu / cc or more and 650 emu / cc or less, and the sensing element (30) having a long side direction and a short side direction, having uniaxial magnetic anisotropy in a direction intersecting the long side direction, and sensing a magnetic field by the magnetoimpedance effect.

The application discloses a preparation strategy of a single-layer magnetic cage lattice film material, and belongs to the technical field of nanometer materials.The application comprises the following steps: in an ultrahigh vacuum environment, Nb and Te are evaporated and deposited onto a substrate according to a certain deposition beam flow ratio by using a molecular beam epitaxy process, chemical bonding between the Nb and Te is realized through annealing treatment, and a single-layer magnetic cage lattice NbTe2 film material is obtained.The application realizes the preparation of the single-layer cage lattice NbTe2, and the single-layer cage lattice NbTe2 is subjected to atomic structure and magnetic characterization by means of a characterization system, so that the application has excellent scientific research value and wide application potential, and provides a new platform for in-depth scientific research and exploration of novel quantum physical properties.

The apparatus for magnetizing the magnetized fixed layer and heating the antiferromagnetic layer is simplified. [Solution] A laminated film 601 is formed having a ferromagnetic layer 631 and an antiferromagnetic layer 66, with the ferromagnetic layer 631 and the antiferromagnetic layer 66 in contact with each other in a first direction Z (Step S1). Next, a magnetic field in the first direction Z is applied to the laminated film 601 to create a magnetization-fixed layer 63 from the ferromagnetic layer 631, in which the magnetization direction is fixed with respect to the external magnetic field (Step S2). After stopping the application of the magnetic field, the laminated film 601 is heated to a temperature above the blocking temperature of the antiferromagnetic layer 66 to create a magnetic laminate 6 (Step S3).

To provide a magnon junction, a magnon random access memory, a microwave oscillator, a detector, and an electronic apparatus.SOLUTION: A magnon junction includes: a first electrode layer formed of a nonmagnetic conductive material; a free magnetic layer provided on the first electrode layer and formed of a ferromagnetic conductive material; an antiferromagnetic barrier layer provided on the free magnetic layer and formed of an antiferromagnetic insulating material; a reference magnetic layer provided on the antiferromagnetic barrier layer and formed of the ferromagnetic conductive material; and a second electrode layer provided on the reference magnetic layer and formed of the nonmagnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is fixed along a perpendicular direction. The free magnetic layer has the perpendicular magnetic anisotropy or a perpendicular magnetic moment component, and a magnetic moment direction thereof is reversible along a perpendicular direction. The antiferromagnetic barrier layer has the perpendicular magnetic anisotropy or the perpendicular magnetic moment.SELECTED DRAWING: Figure 3

In implementations described herein, processes, methods, and techniques are described for the detection of analytes in a sample using multiplexing methods for giant magnetoresistance sensors.

The present invention is entitled "Material Having Both Negative Spin Polarization and Negative Anisotropy." Aspects of the present disclosure generally relate to spintronic devices for use in magnetic media drives, magnetoresistive random access memory devices, magnetic sensors, or magnetic recording write heads. The spintronic device includes a multilayer structure having a negative anisotropy field and a negative spin polarization. The multilayer structure includes a plurality of layers, each of the plurality of layers including a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first sublayers and the second sublayers alternate. The negative anisotropy field of the multilayer structure is between about -0.5 T and about -0.8 T, and the effective magnetization of the multilayer structure is between about 2.4 T and about 2.8 T.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

The magnetic memory device includes a spin-orbit torque (SOT)-sensing spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode, the free layer being a synthetic antiferromagnetic structure. The free layer has a magnetic moment that is tilted relative to the long axis of the MTJ stack and tilted relative to the direction in which current flows through the spin Hall electrode. A magnetic field is generated inside the MTJ stack to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, wherein the first layer and the second layer may have the same or different crystal structures. Embodiments of the present application provide a magnetic memory device and a method for forming the same.

A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer (22) located beneath a chemical templating layer (24b, 24u) that is wider than the magnetic tunnel junction (MTJ) structure (26, 28, 30) that is located on the chemical templating layer. Redeposited metallic material (36) is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

Disclosed herein is an improved SOT-MRAM device and method of manufacture thereof. A memory device includes a first structure that includes a magnetic tunnel junction stack and a spin-orbit torque layer. The spin-orbit torque layer is formed on the magnetic tunnel junction stack. A dielectric capping layer is formed over the spin-orbit torque layer. A metal layer is formed on top of the first structure. The metal layer surrounds each of the spin-orbit torque layer and the dielectric capping layer. The metal layer is in direct contact with a sidewall of the spin-orbit torque layer.

A device is described comprising a multilayer structure comprising three layers. The first layer is a magnetic Heusler compound, the second layer (serving as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably: Al; or Ga or an alloy of Al with Ga, Ge, Sn or a combination thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is expressed as Ru 1‑x E x , x is in the range of from 0.45 to 0.55. The MRAM element may be constructed by sequentially forming a substrate, the multilayer structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).

The present invention provides a soft magnetic alloy which has high saturation magnetic flux density Bs and low coercivity Hc.　A soft magnetic alloy which contains Fe and at least one metalloid element. With respect to this soft magnetic alloy, an amorphous and nanocrystals having a crystal size of from 5 nm to 30 nm are mingled with each other. The coefficient of determination for the atomic concentration of Fe and the atomic concentration of the at least one metalloid element is 0.700 or more.

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

A superconducting switch having persistent and non-persistent states and its use as a driver in a memory system is described. The example superconducting switch includes a first superconducting layer and a second superconducting layer. The superconducting switch includes a first magnetic layer having a fixed magnetization state. The superconducting switch includes a second magnetic layer capable of being in at least a first magnetization state or a second magnetization state. The superconducting switch is capable of being in either the first state or the second state, and the superconducting switch is configured such that application of a magnetic field to the second magnetic layer changes the magnetization of the second magnetic layer from the first magnetization state to the second magnetization state, thereby placing the superconducting switch in the second state, and removal of the magnetic field automatically returns the superconducting switch from the second state to the first state.

A magnetic memory device includes a device isolation layer on a substrate and defining an active region; a source region and a drain region in the active region of the substrate and separated from each other; a channel portion in the active region of the substrate and between the source region and the drain region; a spin-orbit torque (SOT) inducing layer on the channel portion of the substrate; a magnetic tunnel junction (MTJ) structure on the SOT inducing layer, the MTJ structure including a free layer on the SOT inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier layer; a word line on the MTJ structure; a source line electrically connected to the source region; and a bit line electrically connected to the drain region.

The present disclosure concerns a magnetoresistive sensor (MR) element, comprising a reference layer having a reference magnetization; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field, the sense magnetization being reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The MR element further comprises a dipolar assisting layer, configured to generate a dipolar stray field oriented substantially out-of-plane, such that the dipolar stray field is added to the out-of-plane external magnetic field, resulting in an effective magnetic field that is larger than and proportional to the external magnetic field. The present disclosure further concerns a magnetic sensor device comprising the MR element.