461 results about "Hall effect" patented technology

The present disclosure provides an orbitronic device having orbital Hall effect or inverse orbital Hall effect, and method for enhancing the efficiency thereof. The orbital torque device comprises: a ferromagnetic / non-magnetic heterojunction formed by compounding a ferromagnetic layer and a non-magnetic layer as an orbital current source, wherein the ferromagnetic layer contains a ferromagnetic material, the non-magnetic layer contains a non-magnetic material with weak spin-orbit coupling, the non-magnetic layer is used as an orbital Hall channel to generate orbital current, and the orbital current enters the ferromagnetic layer, so that an orbital torque is generated through an orbital-spin conversion effect of the ferromagnetic layer to realize switching of a magnetic moment. The present disclosure can provide orbitronic device with low cost and good performance.

The invention provides a track electronic device based on a track Hall effect and a magnetic memory device. The track electronic device comprises a substrate; the ferromagnetic / non-magnetic heterojunction structure is prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track source, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure is made of a 3d-5d metal material and a two-dimensional TMD material, and the ferromagnetic layer structure is an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer. According to the orbital electronics device and the magnetic storage device which are formed on the basis of an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer as a ferromagnetic layer, the orbital torque efficiency can be enhanced, the critical overturning current density is reduced, and the overturning speed is increased.

The invention discloses a three-dimensional magnetic field bionic seal beard sensor based on a Hall effect. The sensor comprises a mounting frame, a Hall chip, a universal joint component, bionic beards and magnets, wherein the Hall chip and the universal joint component are arranged on the mounting frame; the bionic beards are arranged on the universal joint component; the universal joint component is used for enabling the bionic beard to swing in a first direction and a second direction in a reference plane perpendicular to the center line of the bionic beard after the bionic beard is subjected to the acting force of fluid, the first direction is perpendicular to the second direction, and the universal joint component enables the bionic beard to reset after the bionic beard is not subjected to the acting force of the fluid; the magnetic flux density of the magnets changes along with the movement of the bionic beards; the Hall chip is used for sensing magnetic field information. While the characteristics of strong environmental adaptability and high sensitivity of a conventional bionic beard sensor are reserved, the limitation of one-way sensing of the sensor is broken through, the synchronous detection capability of the flow velocity, the flow direction and the vortex street frequency is improved, and the application range of the sensor in a complex underwater scene is widened.

A dendrometer, comprising a single mechanical element functionally holds a sample under test via a spring-element in the element that draws two arms firmly against the sample. The spring section of the single mechanical element can be serpentine, or any other shape providing the desired spring constant and range of motion. The one or more spring members extend between the first frame member and the second frame member, wherein the one or more spring structures are nonrigid (extensible and compressible) such that the second frame member is movable relative to the first frame member. The dendrometer comprises a toothed socket on an end of each arm to allow adjustment of the range of clamping. In at least one example, a magnet or actuator attached to one arm, and a Hall effect or other positional sensor, is attached to the alternate arm.

A circuit includes a bias current generator, a temperature compensation circuit, and a Hall effect sensor. The bias current generator has a first input, a second input, a first terminal, and a second terminal. The bias current generator includes a resistor circuit having a first terminal and a second terminal coupled to the first terminal and the second terminal of the bias current generator respectively. The temperature compensation circuit has a first input, a second input coupled to the first input of the bias current generator, and an output coupled to the second input of the bias current generator. The Hall effect sensor has a first terminal coupled to the first terminal of the bias current generator, a second terminal, a third terminal, and a fourth terminal.

A magnetoresistive memory device and an integrated memory circuit are provided. The magnetoresistive memory device includes a magnetic tunneling junction (MTJ) and a composite spin orbit torque (SOT) channel in contact with a terminal of the MTJ. The SOT channel includes: a first channel layer, configured to convert a portion of a charge current into an orbital current based on orbital Hall effect; and a second channel layer, covering the first channel layer, and configured to convert a portion of the charge current into a first spin current based on spin Hall effect, and to convert the orbital current to a second spin current.

The invention discloses a battery charging and discharging power control precision optimization method for a BMS system, and relates to the technical field of charging and discharging parameter control, and the method comprises the steps: constructing a second-order resistance-capacitance network equivalent circuit model, and fitting model parameters through a pulse charging and discharging experiment; identifying an error source and quantifying a charge-discharge power control error of the current BMS; a Hall effect sensor and a voltage sampling chip are selected for experimental data acquisition; establishing a compensation model of the temperature to the charging and discharging efficiency; introducing an adaptive control algorithm; a multi-stage constant current-constant voltage charging algorithm is adopted; integrating the capacity attenuation model and the internal resistance growth model; a real-time operating system and a time-triggered task scheduling mechanism are adopted to control the cycle of a charging and discharging power control instruction, and dynamic resource allocation and delay control are carried out. By adopting technical means such as a second-order resistance-capacitance network equivalent circuit model, the precision and the stability of battery charging and discharging power control are remarkably improved.

The invention discloses an intelligent door lock body attitude measurement and dynamic compensation control method, system, equipment and medium, and relates to the technical field of measurement and survey, and the method comprises the following steps: collecting pitch angle and roll angle data, and generating real-time attitude information by using Kalman filtering; a laser ranging module based on the time flight principle is adopted to measure the distance between the lock body and the reference structure, and the measured distance is corrected in combination with data of a temperature sensor; a Hall effect magnetic sensor and an MEMS electronic compass are installed in the lock body, and magnetic field data are fused through low-pass filtering; building a digital twinborn model by utilizing the acquired attitude, correction distance and azimuth data, and simulating the three-dimensional attitude of the lock body; the real-time space coordinates of the lock body are calculated through a triangulation method, and closed-loop control is carried out. According to the invention, the precision of data fusion and the stability of the system are improved, the influence of external interference on the measurement result is reduced, and a reliable dynamic compensation control scheme is provided for the intelligent door lock system.

A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.

The utility model relates to the technical field of elevator automation, in particular to an elevator door lock detection system which comprises a landing door lock, a detection device and a main control module, the detection device comprises a magnetic field structure, a Hall effect module, a pressure detection module and a distance detection module, and the magnetic field structure is arranged on the inner side of a lock hook. The magnetic field intensity inside the magnetic field structure can be changed when a lock arm of the landing door lock enters and exits the magnetic field structure, the Hall effect module is used for collecting the voltage inside the magnetic field structure, the pressure detection module is used for collecting the pressure at the adjacent position of a lock hook of the landing door lock and the lock arm, and the distance detection module is used for collecting the distance between the lock hook and the lock arm. The main control module is electrically connected with the detection device and used for comparing the voltage, the pressure and the distance collected by the detection device with preset threshold values in the main control module, the working state of the landing door lock is checked in real time, potential safety hazards of the landing door lock are found and solved in time after judgment, and the use safety of the elevator landing door is improved.

The invention discloses a nano low-pass filter based on a skyrmion spring oscillator, which is characterized in that an antiferromagnetic coupled MnSi magnetic film structure is prepared, spin transfer torque is utilized to drive skyrmion to move, and a stable oscillation mode is formed through film boundary reflection; by changing the length Lx of the thin film and combining with an accurate mathematical formula, the oscillation frequency of the skyrmion is dynamically regulated and controlled, and high-precision adjustment of the cut-off frequency is achieved. Skyrmion oscillation shows an obvious high-frequency attenuation characteristic when an input signal is higher than a cut-off frequency, and an out-of-band signal is quickly cut off, so that out-of-band leakage is remarkably reduced, and the quality of a filtered signal is improved. The magneto-resistance effect is adopted to read oscillation response, a signal output structure is simplified, system power consumption is reduced, meanwhile, the anti-ferromagnetic coupling structure effectively suppresses spin Hall effect interference, and high stability of system operation is ensured.

The present disclosure generally relates to a magnetic recording device comprising a current-in-plane (CIP) spin orbit torque (SOT) device. The SOT device comprises a topological material (TM) layer and one or more free layers. The TM layer may be recessed from the MFS, and may comprise BiSb or YPtBi. Current is configured to flow in-plane into the TM layer. In one embodiment, one or more free layers are disposed on a same surface of the TM layer. In another embodiment, one or more free layers are disposed on opposite surfaces of the TM layer. In embodiments, comprising two or more free layers, voltage outputs read from at least two of the two or more free layers are opposite, and the two free layers have opposite polarities. In another embodiment, the SOT device comprises four free layers arranged in a bridge configuration.

Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magnetic anisotropy is formed in a ferromagnetic layer by means of spin-orbit torque, and when an external magnetic field in a direction perpendicular to the pulse current is applied, the inversion of magnetization occurs by means of additional torque. The movement of a magnetic domain wall is performed by the inversion of magnetization, spin electrons applied thereby are scattered, and a Hall voltage is generated according to the anomalous Hall effect. The generated Hall voltage increases according to the number of applications of the pulse current or pulse voltage.

The invention discloses a Hall device and a manufacturing method thereof. The Hall device comprises a substrate; the active region extends into the substrate from the first surface of the substrate, and the active region has a first conduction type; the functional areas are located on the surface layer of the active area, and the adjacent functional areas are arranged at intervals; a plurality of first isolation structures, wherein one first isolation structure is arranged on the surface layer of the active region between the adjacent functional regions; a plurality of field injection regions, one field injection region is arranged in the active region below each first isolation structure, and the field injection region has a second conduction type; wherein a first distance is formed between the bottom of the functional region and the bottom of the active region, a second distance is formed between the bottom of the field injection region and the bottom of the active region, and the second distance is smaller than the first distance. According to the invention, the effective thickness teff of a carrier circulation region in the active region can be reduced, and the detection sensitivity of the Hall device is improved.

A magnetic sensor according to the present invention is capable of measuring a small magnetic field with high accuracy by eliminating 1 / f noise. The magnetic sensor comprises a variable magnetic field detection unit that includes a Hall element having a magnetism-sensing direction giving rise to an anomalous Hall effect and a magnetic field control unit for controlling the Hall element so that a magnetic field having a component in a non-sensing direction orthogonal to the magnetism-sensing direction is generated in the Hall element. The magnetic sensor may further comprise a magnetic field calculation unit that calculates a measurement magnetic field on the basis of a first output and a second output, the first output including a measurement result obtained when the variable magnetic field detection unit measures a measurement magnetic field along the magnetism-sensing direction in a first state in which the direction of the magnetic field generated in the Hall element is not controlled by the magnetic field control unit, the second output including a measurement result obtained when the variable magnetic field detection unit measures the measurement magnetic field in a second state in which the direction of the magnetic field generated in the Hall element is controlled by the magnetic field control unit.

A keyboard includes a plurality of keys. Each key includes a keycap, a coil spring extending from a top side of the keycap to a bottom side of the transparent top case, and a magnet positioned within the keycap. The coil spring biases the keycap toward an undepressed position.

The invention provides an orbital electronics device based on an orbital Hall effect and a preparation method thereof. The orbital electronics device comprises a substrate; the sensor comprises a substrate and a ferromagnetic / non-magnetic heterojunction structure prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track Hall layer, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure serving as the orbit Hall layer is formed by doping an oxide or metal (second metal) into an orbit Hall channel layer (first metal or two-dimensional transition metal sulfide (TMD) material). According to the invention, the oxide or metal is doped as the orbit Hall layer, so that the orbit torque efficiency can be enhanced, and the critical flip current density can be reduced.

The invention relates to the field of hydrogen sensors, in particular to a palladium-based multilayer film hydrogen sensor based on an abnormal Hall effect as well as a preparation method and application of the palladium-based multilayer film hydrogen sensor. The palladium-based multilayer film hydrogen sensor based on the abnormal Hall effect comprises a substrate, a film structure with a Hall rod pattern and an electrode layer which are sequentially arranged from bottom to top, the thin film structure with the Hall rod pattern sequentially comprises a Pd single-layer thin film and a (Co / Pd) X multi-layer thin film from bottom to top, wherein X represents the cycle number of the (Co / Pd) X multi-layer thin film; x is an integer from 1 to 10; in each period of the (Co / Pd) X multilayer film, an arrangement mode that the Co layer is arranged on the lower portion and the Pd layer is arranged on the upper portion is adopted. The palladium-based multilayer film hydrogen sensor based on the abnormal Hall effect has the advantages of being obvious in hydrogen detection current signal, high in environmental gas interference resistance and controllable in hydrogen detection concentration.

The utility model provides an integrated current sensor, a high-voltage box and a vehicle, and the integrated current sensor comprises a first measurement channel and a second measurement channel, the first measurement channel is a shunting effect channel, and the second measurement channel is a Hall effect channel; the first measurement channel and the second measurement channel are connected to a circuit to be measured and are used for measuring the current of the circuit to be measured; and the second measurement channel is also used for replacing the first measurement channel to carry out current measurement when the first measurement channel is abnormal. The integrated current sensor provided by the utility model has a relatively high integration level, and high-voltage safety is ensured.

The invention belongs to the technical field of millimeter wave frequency multiplication, and provides a millimeter wave high-order frequency comb frequency multiplier and a preparation method and application thereof. The millimeter wave high-order frequency comb frequency multiplier comprises a substrate layer and an absorption layer which are arranged in a stacked mode. The absorption layer comprises niobium-iridium-tellurium layers and metal electrode layers, parts of the metal electrode layers are in lap joint with the niobium-iridium-tellurium layers, and the four metal electrode layers are symmetrically distributed in the transverse direction and the longitudinal direction. According to the invention, niobium-iridium-tellurium is adopted as the absorption layer, and niobium-iridium-tellurium is a zero-band-gap material, so that the detection spectrum range is wide; meanwhile, niobium-iridium-tellurium is a non-centrosymmetric material and has a relatively large Bell curvature dipole coefficient, so that the niobium-iridium-tellurium frequency multiplier has a nonlinear Hall effect induced by the Bell curvature, and the millimeter wave high-order frequency comb frequency multiplier constructed by the niobium-iridium-tellurium frequency multiplier has a high-order frequency multiplication effect, does not need additional bias voltage and can stably work at room temperature and low temperature. In addition, dependence on a high-frequency millimeter wave-terahertz source is effectively reduced, and a theoretical basis is provided for development of the high-frequency millimeter wave-terahertz source.

The invention discloses a device with a spherical pair structure, a Hall rocker and electromechanical equipment. The device comprises a fixing device and a rotating device, the fixing device at least comprises one of a top cover and a mounting plate; the outer barrel is fixedly connected with the top cover or the mounting plate; the outer barrel and the inner surface of the top cover or the inner surface of the mounting plate jointly form a spherical cavity or form a complete spherical cavity; the rotating device is a detachable movable ball body; the detachable movable ball body is formed by assembling two or more than two parts, and the main body appearance of the assembled assembly body is spherical or partially spherical; an assembly formed by assembling a single part or a plurality of parts of the detachable movable ball is provided with a partial spherical outer surface, and the partial spherical outer surface is in spatial spherical surface contact with the inner surface of the spherical cavity. According to the device, the Hall rocker is simple in structure, long in service life and high in protection performance, and a reliable friction positioning function or a self-resetting function is achieved in a limited space.

The invention discloses a magnetic electronic device for generating track torque by using a metal vanadium or titanium track Hall effect and a manufacturing method thereof. The device comprises a substrate, a track Hall structure containing a vanadium or titanium layer, and a heavy metal layer and a ferromagnetic layer which are adjacent to the track Hall structure, when a charge current passes through the vanadium or titanium layer, a transverse track current is generated based on the track Hall effect, and the track current is injected into the ferromagnetic layer and then converted into an effective track torque for controlling the magnetization state of the ferromagnetic layer. Preferably, the ferromagnetic layer has a perpendicular magnetic anisotropy. According to the invention, the light transition metal vanadium or titanium is used as the track Hall material, the experiment proves that a huge track Hall angle greater than 0.45 can be obtained, and meanwhile, the resistivity of the material is lower, so that the shunting phenomenon can be reduced in an actual device, and the critical current density for realizing write-in flipping can be obviously reduced. The device is simple in structure and compatible with an existing semiconductor process, and a brand new material platform is provided for developing a low-power-consumption and high-density magnetic random access memory (MRAM).

The invention provides a heavy metal / ferromagnetic heterojunction spin orbit torque efficiency regulation and control method, and relates to the field of spin electronic devices, and the method comprises the steps: introducing a vanadium-based oxide with an electronic phase change characteristic at a heavy metal side, and preparing a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer film heterojunction; current is applied to the vanadium-based oxide layer, orbital flow perpendicular to the current direction is generated based on the orbital Hall effect, the orbital flow flows into the heavy metal layer through interlayer coupling and is converted into spin current perpendicular to the film surface, the spin current and spin current generated by the spin Hall effect of the heavy metal layer are overlaid and then injected into the ferromagnetic layer, and spin orbital torque is enhanced; the spin-orbit torque efficiency is improved; the electronic phase change of the vanadium-based oxide layer is triggered through external excitation, the orbital flow density is dynamically adjusted, and the spin-orbit torque efficiency is regulated and controlled. According to the invention, the dynamic regulation and control of the spin-orbit torque efficiency can be realized by introducing the phase-change material without changing the component or structure of the heterojunction material.

The invention discloses an equiphase Hall sensor three-degree-of-freedom displacement measurement method and equipment, and belongs to the field of motors, and the equiphase Hall sensor three-degree-of-freedom displacement measurement equipment comprises a Halbach planar magnet, a Hall sensor, a signal processing system, a magnetic suspension planar motor and a feedback control system. The equal-phase Hall sensor three-degree-of-freedom displacement measurement method comprises the following steps: determining the arrangement of a Hall sensor in a magnetic suspension planar motor; the Hall sensor measures the magnetic field intensity passing through the position through the Hall effect; converting the measured magnetic field intensity into a magnetic field phase through a four-quadrant arc tangent method; establishing a relationship between a magnetic field phase and displacement according to magnetic field characteristics of the magnet; processing four groups of Hall sensor data, and calculating a motor rotation angle; displacement data measured by the Hall sensor are fed back to a control system of the motor in real time. According to the invention, the displacement of the magnetic suspension planar motor is accurately measured by using the equal-phase Hall sensor array in combination with the four-quadrant arc tangent method.

The invention relates to the technical field of rail transit transport vehicle detection, in particular to a method for measuring the axle temperature and the axle speed of a motor train unit, a circuit board fixing groove with an anti-reverse design is formed in a fixing shell and used for installing and fixing a circuit board assembly; two threaded mounting holes are formed in the mounting surface of the fixed shell and are used for fixing and connecting a sensor; the Rh is fixed on the side of the air guide hole through a pouring sealant, and the distances between the Rk and the Rh and the surface of the shell in the direction of the mounting gap are the same; the gear dependent measurement principle based on the Hall effect is abandoned, the temperature and resistance value change of the platinum thermistor Rh is driven through the installation gap airflow pressure intensity change caused by rotation of a measured shaft, shaft speed measurement is completed in combination with a Wheatstone bridge, and the installation position limitation and gear modulus constraint of a sensor on a metal gear are thoroughly eliminated. The installation flexibility of the sensor in the complex space layout under the motor train unit and the adaptation efficiency of different train types and shaft system structures are greatly improved.

A welding electrode apparatus may be mounted to a programmable motion controller such as a robot that presents it to a workpiece along a pre-programmed path conforming to the workpiece surface. The apparatus has a first drive for rotating the welding electrode about its own axis. The welding electrode holder is part of a welding electrode had that is mounted to, or includes, an adapter that itself mounts to a programmable robot. The welding head is sprung on the adapter, such that application of the welding rod against the workpiece under a given force deflects the springs. The adapter can be adjusted in real time relative to the robot to smooth out variations in application force. The apparatus uses Hall effect sensors to sense deviations from a datum of spring displacement or force, and has a servo-motor to re-adjust positioning of the welding head relative to the robot.

The invention discloses a double-range current measurement system based on a solid-state relay, and relates to the technical field of current measurement. The system comprises a closed-loop Hall current sensor, a first shunt resistor, a second shunt resistor, a solid state relay (SSR), a Hall conditioning IC and an external controller. Two shunt resistors with different resistance values are dynamically switched through a solid-state relay, and compatibility of low-current high-precision measurement and high-current wide-range measurement is achieved. The method solves the problems that the precision and range of an existing single-range sensor are difficult to consider, double sensors are high in cost, mechanical relays have defects and the like, has the advantages of low cost, high reliability, good measurement precision and the like, and is suitable for wide-dynamic-range current measurement scenes such as an energy storage system and the like.

The invention provides a novel Hall device and a forming method thereof, a heterojunction material layer is arranged on a well region of the Hall device, an excitation electrode and a Hall electrode which are electrically connected with the heterojunction material layer are formed on the heterojunction material layer, and the heterojunction material layer has high electron mobility. A constant voltage source or current source is applied to the excitation electrode, and for an external magnetic field, Hall voltage can be generated between the Hall electrodes due to the Hall effect. By introducing the heterojunction material layer with high electron mobility, the Hall effect and the magnetic field detection sensitivity can be greatly improved, and the performance of the semiconductor device is further improved. Since the sensitivity of the Hall device is increased by introducing the heterojunction material layer with high electron mobility, special requirements on the doping concentration of the well region and the doping concentration of the substrate are not required, that is, the doping concentration of the well region and the doping concentration of the substrate can be in accordance with normal doping concentrations, and the pollution control requirement in production is reduced at the same time.

The embodiment of the invention provides a container transportation state monitoring method based on multi-parameter perception, which is applied to the technical field of logistics monitoring and comprises the following steps: by taking a Hall switch trigger signal as a time reference and a logic starting point, acquiring acceleration, attitude angle, position and temperature and humidity signals in a time window before and after triggering; performing time sequence correlation analysis on the acceleration, the attitude angle and the position signal to generate initial event judgment; when the initial event is determined to be physical door opening or hoisting start, extracting an impact decay time constant and an attitude angle deviation retention amount, and constructing a two-dimensional feature space to perform mechanical impact classification; asynchronously calling a temperature and humidity signal according to a judgment result for root verification; and generating a joint event code and executing differentiated resource control. According to the invention, triggering events with different properties can be accurately distinguished, risk grading of mechanical impact and source tracing of environmental abnormity are realized, terminal endurance time is obviously prolonged, and monitoring reliability is ensured.

The invention provides a flexible Hall angle sensor and an angle detection system.The flexible Hall angle sensor comprises a flexible substrate and a crystal grain fixed to the flexible substrate, and the flexible substrate is provided with a conductive circuit electrically connected with the crystal grain; the crystal grain is provided with a Hall disc used for converting a magnetic field signal into a Hall voltage signal and a circuit unit used for supporting the Hall disc to work, and the Hall disc is electrically connected with the conductive circuit through the circuit unit. A crystal grain is arranged on a flexible substrate, and a Hall disc for realizing Hall voltage signal detection and a circuit unit for supporting the Hall disc are directly arranged on the crystal grain, so that a single chip crystal grain can realize sensing of magnetic induction intensity; and the conductive circuit which can deform along with the bending or stretching of the flexible substrate and maintain the conductive performance is electrically connected with the crystal grains. The flexible substrate has the advantages of high reliability, mechanical performance, electrical performance and cost while having relatively good flexible performance.