278 results about "Transverse magnetic field" patented technology

A measurement-while-drilling or logging while drilling method and apparatus for determining the azimuth of providing magnetic field in a remote formation layer in the vicinity of a down hole resistivity tool. A cross-component magnetic field with substantially orthogonal transmitter and receiver coils is provided. The coil planes are either substantially orthogonal (coaxial coils) or parallel (transverse coils) with respect to, the longitudinal axis of the tool body. The coils are placed on the tool body having a external surface and a plurality of grooves are cut in the external surface of the tool body and oriented substantially horizontally with respect to the longitudinal axis of the tool body for the coils and oriented vertically with respect to the longitudinal axis of the tool body for the coaxial coils. A transverse and coaxial coil are placed in the grooves for transmission or reception of a cross-component transverse magnetic field. Ferrite materials may be inserted in the grooves in between the coil wire and the bottom of the grooves. Multiple receivers, transmitters and frequencies may be used to obtain the maximum possible signal-to-noise ratio. The in-phase or quadrature part of a magnetic field, or a combination of the two, or alternatively, the amplitude and / or phase, of the cross-component magnetic field may be measured and processed to indicate the azimuth of a remote layer boundary, provided that the layer boundary is within the depth of investigation of the tool. Measurements may also be made at continuous or multiple tool azimuths.

A current perpendicular to plane (CPP) differential giant magnetoresistive (GMR) sensor that is insensitive to stray longitudinal and transverse magnetic fields. The sensor includes an in stack bias layer structure that is used to bias the magnetic moment of first and second free layers disposed at either side thereof. The bias structure includes an antiferromagnetic layer (AFM). An odd number of antiparallel (AP) coupled magnetic layers are formed on a first side of the AFM and an even number of AP coupled magnetic layers on the opposite side of the AFM.

A silicon single crystal manufacturing method includes: applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0 × 10 15 atoms / cm 3 as a raw material; rotating the crucible at 5.0 rpm or less; allowing inert gas to flow at rate A (m / sec) of formula (1) at a position 20-50% of Y above the melt surface; controlling the rate A within the range of 0.2 to 5, 000 / d (m / sec) (d: crystal diameter (mm)); and reducing the total power of side and bottom heaters by 3 to 30% and the side heater power by 5 to 45% until the solidified fraction reaches 30%. A = Q ‹ 760 1000 ‹ 60 ‹ P ‹ ± / À ‹ X ‹ Y ‹ 10 6 Q: Inert gas volumetric flow rate (L / min) P: Pressure (Torr) in furnace X: Radiation shield opening diameter Y: Distance (mm) from raw material melt surface to radiation shield lower end ± : Correction coefficient

An apparatus and method of uniformly heating, rheologically softening, and thermoplastically forming metallic glasses rapidly into a net shape using a rapid capacitor discharge forming (RCDF) tool in combination with an electromagnetic force generated by the interaction of the applied current with a transverse magnetic field. The RCDF method utilizes the discharge of electrical energy stored in a capacitor to uniformly and rapidly heat a sample or charge of metallic glass alloy to a predetermined “process temperature” between the glass transition temperature of the amorphous metal and the equilibrium melting point of the alloy in a time scale of several milliseconds or less, at which point the interaction between the electric field and the magnetic field generates a force capable of shaping the heated sample into a high quality amorphous bulk article via any number of techniques including, for example, injection molding, dynamic forging, stamp forging, and blow molding in a time scale of less than one second.