The invention relates to a
processing method for solving heat dissipation of a contact surface of a
wafer and an electrostatic chuck, which belongs to the technical field of
silicon wafer processing, and comprises the following operation steps of: 1,
grinding a
silicon wafer; and 2, cleaning the surface of the
silicon wafer through NAOH, SC1 and pure water. And 3, carrying out
acid corrosion on the silicon wafer in a
mixed solution of HF, HNO3 and H3PO4, wherein the
corrosion rate needs to be regulated and controlled to 0.8-1 [mu] m / s so as to ensure the glossiness and roughness of the back surface. And 4, corroding the silicon wafer through PC-DH2 / TMAH, HF and pure water, and then cleaning the silicon wafer. And 5, carrying out BSD
sand blasting treatment on the back surface of the silicon wafer by using a
grinding liquid formed by mixing a 3000 #
silicon dioxide grinding material and pure water. And 6, cleaning the silicon wafer subjected to the
sand blasting treatment by adopting SC1. The problem of adapting to the temperature of the electrostatic chuck is solved. H3P04 is used for
acid corrosion, and the glossiness of the back surface of the silicon wafer is ensured in a state of a relatively high
corrosion rate. And meanwhile, large-particle salient points on the back surface caused by
acid corrosion are filled in a BSD
sand blasting manner.