CMOS (complementary metal oxide semiconductor) relaxation oscillator with temperature and process self-compensating characteristics

Abstract

The invention discloses a CMOS (complementary metal oxide semiconductor) relaxation oscillator with temperature and process self-compensating characteristics. The CMOS relaxation oscillator comprises a reference source, a capacitor charge and discharge circuit, a first comparator, a second comparator and an SR (set reset) latch, wherein the reference current of the reference source is connected with the capacitor charge and discharge circuit, the reference voltage of the reference source is respectively connected with the same-phase input end of the first comparator and the same-phase input end of the second comparator, the reverse-phase input end of the first comparator and the reverse-phase input end of the second comparator are respectively connected with the capacitor charge and discharge circuit, the output end of the first comparator is connected with the R end of the SR latch, and the output end of the second comparator is connected with the S end of the SR latch. The CMOS relaxation oscillator with temperature and process self-compensating characteristics can overcome the defects of high cost, low reliability, great process deviation and the like in the prior art for realizing the advantages of low cost, high reliability and small process deviation.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a CMOS relaxation oscillator with temperature and process self-compensation characteristics. Background technique [0002] Oscillators are a major building block of many electronic systems, with applications ranging from clock generation in microprocessors to carrier synthesis in wireless communication systems. The most common oscillator is a quartz crystal oscillator. The performance of the crystal oscillator is very stable and the precision is very high. However, due to the use of a quartz crystal, it cannot be compatible with the standard integrated circuit process, and the cost is relatively high. Using the on-chip oscillator realized by the standard CMOS process to replace the off-chip crystal oscillator will be of great help in reducing system cost and improving system integration. [0003] For standard CMOS integrated circuit technology, when the environ...

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Problems solved by technology

[0003] For standard CMOS integrated circuit technology, when the environment changes in temperature, many parameters of MOS transistors will change accordingly, causing the frequency of the oscillator to change with temperature; and in the process of chip manufacturing, batch and batch Between chips and between chips, the parameters of transistors have a certain degree of discreteness, which leads to large process deviations in the oscillator frequency

[0004] In the process of realizing the present invention, the inventor found that there are at least defects such as high cost, low reliability and large process deviation in the prior art

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