18 results about "Broad band" patented technology

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

Etch-free optical metasurface (free space optical resonator) supporting million-quality-factor resonances at visible wavelengths in free space and associated systems and methods are described. In an embodiment, a free space optical resonator includes: a low refractive index layer; a high refractive index layer having a wide band gap; and a low refractive index resist layer. The high refractive index layer is disposed between the low refractive index layer and the resist layer. The resist layer includes a 2-D subwavelength periodic pattern of openings. The low refractive index layer, the high refractive index layer and the low refractive index resist layer are arranged as a vertical stack. The optical resonator is lossless at visible wavelengths of light.

This invention provides a wide-bandgap perovskite thin film, a perovskite tandem solar cell, and a method for preparing the same, relating to the field of photovoltaic technology. The method for preparing the perovskite thin film includes: adding a perovskite structural material and an organic additive to an organic solvent to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution onto a substrate; and annealing the substrate to obtain the perovskite thin film. The organic additive includes a material containing a thiophene dioxide framework. The organic additive used in this invention can effectively regulate the crystallization rate of mixed halides, delay crystallization, enhance the uniform distribution of the mixed halide phase, reduce the defect density in the wide-bandgap perovskite thin film, and significantly improve the power conversion efficiency and stability of the solar cell, thereby obtaining a high-performance tandem solar cell.

This invention provides a gradient helical tube composite Helmholtz resonator sound absorption device and its adjustment method, relating to the field of noise control technology. It solves the problem of existing technologies' difficulty in simultaneously achieving high low-frequency efficiency and broadband sound absorption within a limited space. The gradient helical tube composite Helmholtz resonator sound absorption device includes a gradient helical tube and multiple Helmholtz resonator units. The diameter of the gradient helical tube changes continuously along the sound wave propagation path. The multiple Helmholtz resonator units are connected in series at the ends of the gradient helical tube and disposed within the internal space enclosed by the gradient helical tube. This invention can broaden the sound absorption bandwidth and enhance low-frequency sound absorption performance through the composite structure of the gradient helical tube and multiple Helmholtz resonator units.

The present application relates to the technical fields of biomass energy utilization and surface engineering protection, and discloses a kind of high-temperature corrosion resistant protective coating on the surface of biomass boiler pipeline and preparation method, the present application is aimed at the high-temperature pipeline of biomass boiler under the severe condition of high alkali metal and high chlorine, prone to high-temperature molten salt corrosion, existing protective coating is easy to peel off, insufficient corrosion resistance, short service life of core problem, design NiCoFeCrSiAlW high-entropy alloy protective coating, by accurately controlling the atomic percentage of each element, alloy powder is prepared by two-step mixing method, and a metallurgical bonded high-entropy alloy coating is formed on the surface of the pipeline substrate by wide-band laser cladding technology;The coating is a BCC single-phase solid solution structure, has excellent high-temperature oxidation resistance, molten salt and chlorine ion corrosion resistance, high bonding strength, excellent thermal shock resistance, can greatly reduce the corrosion rate of the pipeline, significantly improve the service reliability and service life of the biomass boiler pipeline.

This invention discloses a design method for a bright vertical annealing process for ultra-thin wide-band stainless steel. For stainless steel strips with a thickness of 0.05mm-1mm and a width of 600mm-1200mm, a vertical bright annealing unit is used for vertical bright annealing. The TV value and process speed of the unit are determined based on the unit's annual output, production specifications, and annual production time. The inlet and outlet speeds for different specifications of stainless steel strips are determined based on the process speed, inlet section downtime, outlet section downtime, and the length of the stainless steel strip. The effective looper quantity for the inlet looper is determined based on the inlet section downtime, and the effective looper quantity for the outlet looper is determined based on the outlet section downtime. The roller diameter and spacing between the rollers are determined based on the thickness specifications of the stainless steel strip. This method provides a complete design process reference for the bright vertical annealing process of ultra-thin wide-band stainless steel, filling a gap in current ultra-thin wide-band stainless steel bright vertical annealing technology.

A vehicle propulsion system including a battery for supplying a direct current (DC), an inverter including a wide band gap transistor for converting the DC to an alternating current (AC) in response to a transistor control signal applied to a gate of the wide band gap transistor, a high voltage power switch coupled in anti-parallel with the wide band gap transistor to provide a path for the current when the wide band gap transistor is turned off, an inverter controller including a power supply for supplying a DC current, a current sensor for detecting a current level of the DC current, and a high voltage transistor for generating the transistor control signal in response to a variation of the current level and the DC current, and an electric motor configured to generate an electromotive torque in response to the AC voltage to propel a vehicle.

The application provides an intelligent imaging system based on electrochromic and multispectral cooperation, and belongs to the technical field of multispectral imaging, and is used for solving the problems that the filter wheel is large in volume, slow in switching, and difficult to balance miniaturization, real-time performance and high spectral accuracy in the related art. The system comprises a miniaturized switchable filter wheel, an image sensor and a controller. The filter wheel is integrated with an electrochromic narrow-band filter station and a multi-band synchronous acquisition filter area. The controller constructs an implicit spectral radiation field model and updates parameters thereof online through variational inference, outputs a posterior mean and a posterior variance, calculates expected information gain of each candidate acquisition action based on the posterior variance, and executes an optimal action, so as to realize adaptive cooperation of narrow-band high-precision acquisition and wide-band rapid acquisition. The system significantly improves compactness, real-time performance and spectral reconstruction quality of multispectral imaging.

This application relates to the field of solar cells, disclosing perovskite materials, perovskite layers, their preparation methods, perovskite solar cells, and photovoltaic modules. The perovskite material has a band gap of 1.65 eV to 1.75 eV, and its chemical formula is ABX3, where A is an A-site cation, B is a B-site cation, and X is an X-site anion. The elements corresponding to the X-site anion include iodine, bromine, and chlorine. In the perovskite material, the mass percentage of bromine is 0.0001% to 0.0012%, and the mass percentage of chlorine is 0.0005% to 0.0020%. The perovskite material provided in this application, while meeting the wide band gap requirement, helps to avoid the formation of bromine-rich phases, thereby effectively preventing the separation of bromine and iodine phases and ensuring that the perovskite layer prepared using this material has high structural stability.

This invention discloses a perovskite layer with high photothermal stability and a wide-bandgap perovskite solar cell. The perovskite layer with high photothermal stability is obtained by spin-coating an organic salt solution prepared by dissolving formamidine iodide, formamidine bromide, and formamidine chloride in a mixed solvent of anhydrous ethanol and tetramethylene sulfoxide onto the surface of an inorganic layer composed of PbI2 and CsBr, followed by annealing. The wide-bandgap perovskite layer provided by this invention has a smooth surface, high purity, ideal lattice integrity and growth orientation, uniform phase, and excellent photothermal stability. Perovskite solar cells prepared based on this layer have a long average carrier lifetime, high photoelectric conversion efficiency, and good stability.

This invention discloses a wide-bandgap perovskite solar cell modified with an organic passivation layer and its fabrication method. The wide-bandgap perovskite solar cell of this invention comprises, from bottom to top, an anode substrate, a hole-selective contact layer, a perovskite layer, an organic passivation layer, an electron transport layer, a cathode modification layer, and a cathode, stacked sequentially. The organic passivation layer comprises 2-(piperazine-1-yl)ethylamine hydroiodate. This invention effectively passivates perovskite surface defects and also reduces the energy level difference between the perovskite layer and the electron transport layer, promoting selective electron extraction and suppressing interface charge accumulation, while simultaneously improving photovoltaic performance parameters such as open-circuit voltage, fill factor, and photoelectric conversion efficiency. The fabrication process of this invention is simple and suitable for further performance enhancement and large-scale industrial production of perovskite devices.

A multifunction portable illumination system includes a housing having a power source. A broadband illumination source connected to the power source and capable of producing broadband illuminating light. The system includes an imaging disruption assembly including at least one narrow-band light source capable of generating one or more high intensity light beams (HILB) and a light modifying assembly configured to modify the one or more HILB to produce a Modified HILB. At least one Modified HILB may have the requisite irradiance to cause disruption of an imaging system.

This invention relates to the field of solar cell technology, specifically to a hole transport layer containing betaine hydrochloride additive and its inverse wide-bandgap perovskite solar cell. The hole transport layer comprises a nickel oxide layer and a self-assembled molecular layer formed on its surface. The self-assembled molecular layer contains (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid and betaine hydrochloride. The introduction of betaine hydrochloride improves the conductivity of the hole transport layer through the interaction of its carboxylic acid groups with nickel oxide, and inhibits its clustering behavior through interaction with the self-assembled molecules, thereby improving film uniformity and effectively passivating buried interface defects in the perovskite light-absorbing layer. The inverse wide-bandgap perovskite solar cell fabricated based on this hole transport layer exhibits significantly improved open-circuit voltage and fill factor, ultimately achieving a photoelectric conversion efficiency exceeding 21.7%. This invention provides an effective interface engineering strategy for fabricating efficient and stable wide-bandgap perovskite solar cells and tandem devices.

This invention discloses an ultra-narrow bandgap electron acceptor. By introducing one or two symmetric or asymmetric acceptors at the ends of benzothiadiazole derivatives, the intramolecular charge transfer effect is enhanced, deepening the HOMO energy level for effective matching with deep-level wide-bandgap polymer electron donors. This invention also discloses an active layer prepared by blending electron donors and electron acceptors, which broadens the absorption spectrum of the active layer, facilitating the transport of photogenerated carriers, and the fabrication process is simple. This invention further discloses the application of the ultra-narrow bandgap electron acceptor in organic solar cells. Binary organic solar cells assembled based on symmetric acceptors exhibit high power conversion efficiency (PCE) and high short-circuit current density; the assembled binary semi-transparent organic solar cells achieve high light utilization efficiency (LUE), effectively improving the device performance and application scenarios of the ultra-narrow bandgap electron acceptor.