80 results about "Broad band" patented technology

A transistor comprising a first drain region split into first and second drain sub-regions aligned lengthwise and separated by a first low conductivity region, a first source region disposed on a first side of the first drain region split into first and second source sub-regions aligned lengthwise and separated by a second low conductivity region, a second source region disposed on a second side of the first drain region opposite the first side, the second source region split into third and fourth source sub-regions aligned lengthwise and separated by a third low conductivity region, a first gate electrode finger disposed over first and second active regions between the first drain region and first source region, and a second gate electrode finger disposed over third and fourth active regions between the first drain region and second source region.

A method and a system have been developed to calibrate the total spectral radiance factor (TSRF) obtained from different instruments. A broad-band light source covering the whole visible range as well as the fluorescence excitation wavelengths is used to measure the TSRF, and one or more narrow-band light sources outside of the fluorescent band is used to measure fluorescent spectral radiance factor (FSRF) separately. After that, the TSRF is adjusted by the FSRF, and a calibrated TSRF can be obtained. This can be applied to characterize Optical Brightening Agents (OBAs) as well as other fluorescent materials without requiring any moving part of the instrument to do the calibration.

The invention discloses a preparation method and application of an imine-linked covalent organic framework material, and belongs to the technical field of photocatalysis. The invention aims to solve the problems that the conventional H2O2 preparation method is high in energy consumption, complex in process, high in cost and not suitable for large-scale production, and the conventional imine-linked COF synthesis method is complex in step, time-consuming in synthesis and single in synthesis method. On the basis of adopting an aldehyde monomer acid pre-activation strategy for the first time, all reactants are directly added into a reaction kettle to be mixed, the imine-linked covalent organic framework material is rapidly synthesized through a solvothermal method, compared with a conventional method, the reaction conditions are simple and convenient to operate, time is saved, and the cost is reduced. The obtained material has the advantages of wide visible light absorption range, narrow band gap, high crystallinity, high photocatalytic activity, high yield and the like; and the obtained imine-linked covalent organic framework material photocatalytic material has good H2O2 production capacity under all light, and has very high practical value.

The invention provides an amide-based additive and an application thereof in preparation of a perovskite solar cell. The molecular structural formula of the acylamino additive is shown as a formula I; r in the formula I is selected from any one of-H,-CH2OH,-CH2Cl and-CH = CH2. According to the invention, the amide-based additive is used in the hole transport layer and the perovskite light absorption layer and can be neutralized with PEDOT / PSS of the hole transport layer in the narrow-band-gap perovskite solar cell, so that the reaction between the PEDOT / PSS and perovskite is slowed down, and the growth of perovskite grains is promoted. Meanwhile, when the film is used for a narrow-band-gap perovskite light absorption layer, an amide group can be oxidized into carboxylic acid, oxidation of Sn < 2 + > in a perovskite precursor is avoided, and the defects of the film are reduced; the Pb vacancy is filled and combined by an amide group when the Pb vacancy is applied to a wide-band-gap perovskite absorption layer, so that the defect of a passivated film is improved; therefore, the perovskite energy level is better matched, the film quality is improved, and the photoelectric conversion efficiency and the stability of the perovskite solar cell can be remarkably improved.

A multifunction portable illumination system includes a housing having a power source. A broadband illumination source connected to the power source and capable of producing broadband illuminating light. The system includes an imaging disruption assembly including at least one narrow-band light source capable of generating one or more high intensity light beams (HILB) and a light modifying assembly configured to modify the one or more HILB to produce a Modified HILB. At least one Modified HILB may have the requisite irradiance to cause disruption of an imaging system.

A delivery fiber assembly suitable for delivering broad band light and including a delivery fiber and a connector member. The delivery fiber has a length, an input end for launching light and a delivery end for delivering light. The delivery fiber includes along its length a core region and a cladding region surrounding the core region wherein the cladding region includes a cladding background material having a refractive index Nbg and a plurality of microstructures in the form of inclusions of solid material having refractive index up to Ninc and extending in the length of the longitudinal axis of the delivery fiber, wherein Ninc<Nbg. The plurality of inclusions in the cladding region is arranged in a cross-sectional pattern comprising at least two rings of inclusions surrounding the core region.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

A calibration light source includes: a broad band light source emitting light in a broad spectral range; and a filter receiving light emitted by the broad band light source and providing structured light by imposing an attenuation pattern exhibiting pattern features at multiple spectral reference lines on the received light such that an emission spectrum of the structured light emitted by the calibration light source exhibits distinct, identifiable emission spectrum features corresponding to the pattern features at the multiple spectral reference lines. A method of calibrating at least one spectrometer using the calibration light source is further disclosed.

The application discloses a trace element detection system and method, and belongs to the technical field of spectral quantitative detection. The system comprises a laser, a sample stage and a spectral signal acquisition system. The laser ablates a sample to generate plasma after passing through a half-wave plate, a Glan prism, a dichroic mirror and a lens group. The acquisition system comprises a wide / narrow band spectral signal collection system and a trigger system: the wide band system comprises an axial and first lateral light path, couples full spectrum signals to a spectrometer, and is used for matrix identification; the narrow band system comprises a second lateral collection lens, a light splitting element and a UV / visible double channel, each channel is sequentially provided with a neutral density filter, an ultra-narrow band filter and a plano-convex lens, and is connected to a photomultiplier tube to an oscilloscope, and high-sensitivity detection of specific element characteristic spectral lines is realized; and the trigger system is used for triggering the spectrometer to acquire. The wide band and narrow band collaborative architecture is adopted, and both material matrix identification and high-precision quantitative detection of trace elements are considered.

A vehicle propulsion system including a battery for supplying a direct current (DC), an inverter including a wide band gap transistor for converting the DC to an alternating current (AC) in response to a transistor control signal applied to a gate of the wide band gap transistor, a high voltage power switch coupled in anti-parallel with the wide band gap transistor to provide a path for the current when the wide band gap transistor is turned off, an inverter controller including a power supply for supplying a DC current, a current sensor for detecting a current level of the DC current, and a high voltage transistor for generating the transistor control signal in response to a variation of the current level and the DC current, and an electric motor configured to generate an electromotive torque in response to the AC voltage to propel a vehicle.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The invention discloses a wide-band-gap perovskite solar cell and a full-perovskite laminated solar cell. Methyl ammonium bromide and guanidine bromide are jointly doped into the perovskite precursor solution to partially replace formamidine iodide, and a multi-element A-site alloy structure is introduced into the perovskite solar cell, so that defects in a perovskite layer are reduced, the service life of a carrier is prolonged, surface non-radiation is inhibited, the voltage loss of a device is reduced, and the performance of the device is improved. Therefore, the performance of the perovskite solar cell is obviously improved.

The invention relates to the technical field of new energy, and discloses a perovskite thin film band gap gas phase broadening processing method and a solar cell based on the perovskite thin film band gap gas phase broadening processing method.The band gap broadening method comprises the steps that firstly, a narrow-band-gap perovskite thin film is prepared and placed in a closed cavity, and meanwhile a gas phase broadening processing material is placed in the closed cavity; the cavity is vacuumized, and the target pressure intensity is regulated and controlled; heating the chamber to sublimate the broadening material into a gas-phase atmosphere, and realizing a gas-phase diffusion broadening reaction through temperature and pressure preservation; and finally, carrying out annealing treatment to obtain the wide-band-gap perovskite thin film. The method can realize accurate and controllable regulation and control of the perovskite material band gap, does not need to use toxic and harmful solvents in the whole process, is compatible with a plurality of initial film forming processes such as a wet method and a dry method, provides a green and industrialized technical scheme for preparation of the efficient wide-band-gap perovskite material, and has wide application prospects. The method is especially suitable for the preparation requirement of the wide band gap material for the top cell of the laminated solar cell.

A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner, and a third region and a fourth region arranged between the first and second regions in different positions in a first direction. In a cross section perpendicular to the first direction, the gate electrode in the fourth region has a cross-sectional area smaller than that of the gate electrode in the third region.

The application belongs to the technical field of display, and particularly relates to an IGZO thin film transistor based on gradient gallium doping and hydrogen plasma treatment and a preparation method thereof. The application adopts ALD technology to construct a three-section linear gradient Ga-doped active layer, the bottom low Ga area ensures efficient carrier transport, the migration rate can reach 58.7 cm 2 Vs, the top high Ga area uses the high electronegativity of Ga-O bond and the wide band gap characteristics to inhibit the back channel defects, the Delta Vth under NBITS test is as low as 2.2 V, and the stability is improved by more than 5 times compared with the undoped device. In-situ hydrogen / oxygen plasma composite treatment is carried out in the ALD chamber, the saturation dangling bond is compensated, the interface state density is controlled to be ≤10 12 cm ‑2 eV ‑1 , and the sub-threshold swing is optimized. Periodic pauses are introduced in the active layer deposition, the film surface roughness is ≤0.5 nm; a two-step method is used for contact hole etching, and the top high Ga layer is ≥5 nm. The comprehensive performance meets the high-end application requirements such as high-resolution display and flexible display, and the application value and market competitiveness are remarkable.

The utility model belongs to the technical field of green Chinese onion planting, and provides an auxiliary bundling device for green Chinese onion seedling transplanting, which comprises a bonding part and a winding part, the bonding part comprises a support frame, a rotating wide belt, a plurality of spacing pieces, a placing frame, a lower adhesive tape wheel, an upper adhesive tape wheel, a rotating shaft and a pressing cotton wheel, the spacing pieces are sequentially arranged in an annular array mode in the length direction of the rotating wide belt. The outer wall of the rotating shaft is sleeved with the pressing cotton wheel, and the pressing cotton wheel, the lower rubber belt wheel and the upper rubber belt wheel are oppositely arranged. And the winding part comprises a steering plate, a chassis, a threaded rod, a fixed cylinder, a compression spring, a hinge plate and a placement disc. According to the auxiliary bundling device for green Chinese onion seedling transplanting, green Chinese onions are bundled, overall transplanting during planting is facilitated, the labor intensity of workers is reduced, time and labor are saved, and application and popularization are facilitated.

Etch-free optical metasurface (free space optical resonator) supporting million-quality-factor resonances at visible wavelengths in free space and associated systems and methods are described. In an embodiment, a free space optical resonator includes: a low refractive index layer; a high refractive index layer having a wide band gap; and a low refractive index resist layer. The high refractive index layer is disposed between the low refractive index layer and the resist layer. The resist layer includes a 2-D subwavelength periodic pattern of openings. The low refractive index layer, the high refractive index layer and the low refractive index resist layer are arranged as a vertical stack. The optical resonator is lossless at visible wavelengths of light.

The invention provides a method for preparing a transparent antimony-based chalcogenide film and a photoelectric detector through selective deposition. The transparent photoelectric detector structure provided by the invention comprises a transparent glass substrate, a patterned substrate, a light absorption layer, a wide-band-gap oxide covering layer and a transparent conductive electrode. The transparent light absorption layer is an antimony-based chalcogenide film and is selectively deposited on the patterned substrate. The antimony-based chalcogenide film has different growth orientations and adhesion coefficients on different substrates, and regional selective deposition of the antimony-based chalcogenide film on the patterned substrate can be realized by regulating and controlling the temperature of the substrate. The method provided by the invention breaks through the limitation of the existing transparent photoelectric detector material, and avoids the pattern edge interface damage caused by the traditional patterning methods, such as a stripping method, an etching method and a laser ablation process. The prepared transparent photoelectric detector has the advantages of being simple in preparation, accurate in transparency regulation and control, wide in spectral response in the range of 405-980 nm and the like.

A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.

A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.

This invention provides a wide-bandgap perovskite thin film, a perovskite tandem solar cell, and a method for preparing the same, relating to the field of photovoltaic technology. The method for preparing the perovskite thin film includes: adding a perovskite structural material and an organic additive to an organic solvent to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution onto a substrate; and annealing the substrate to obtain the perovskite thin film. The organic additive includes a material containing a thiophene dioxide framework. The organic additive used in this invention can effectively regulate the crystallization rate of mixed halides, delay crystallization, enhance the uniform distribution of the mixed halide phase, reduce the defect density in the wide-bandgap perovskite thin film, and significantly improve the power conversion efficiency and stability of the solar cell, thereby obtaining a high-performance tandem solar cell.

The application provides a near-infrared luminescent material with ultrahigh temperature, zero loss and quantum yield close to 100%, and a preparation method and application thereof, and belongs to the technical field of luminescence, lighting and analysis and detection. The application takes a compound with a garnet structure as a substrate of the near-infrared luminescent material, the substrate compound has the advantages of a wide band gap, high structural rigidity and adjustable composition, and is easy to induce Cr 3+ to generate high-efficiency near-infrared emission; by introducing Si or Ge, the near-infrared luminescent material with high structural rigidity and high Debye temperature can be obtained, so that the luminescence thermal stability is improved. The results of the examples show that the near-infrared luminescent materials obtained by doping different proportions of Cr 3+ have anti-thermal quenching (about 187% at 150 DEG C) and high quantum yield (about 99%); and the output power of a near-infrared pc-LED light source prepared by using the near-infrared luminescent material and a blue light LED chip is up to 250 mW under a driving current of 100 mA.

The invention relates to the technical field of photoelectric materials, in particular to a perovskite thin film material and a preparation method thereof. The thin film material comprises a conductive substrate and a narrow-band-gap perovskite layer, an intermediate interface modification layer and a wide-band-gap perovskite layer which are sequentially coated on the conductive substrate from bottom to top, the chemical general formula of the narrow-band-gap layer is MAmFAnPb1-cGecI3-gamma Br gamma, the chemical general formula of the wide-band-gap layer is FAxCsyPb1-aMaI3-beta Br beta, and the intermediate interface modification layer is formed by compounding mercaptoacetic acid and nano titanium dioxide. According to the material, through the synergistic effect of lamination band gap complementation, ion doping and composite interface modification, 400-1100 nm wide spectrum efficient absorption is achieved, the defect state density is remarkably reduced, the photoelectric conversion efficiency and the long-term stability are improved, and a key technical support is provided for perovskite solar cell industrialization.

This invention discloses an all-perovskite tandem solar cell based on a smart self-healing tunneling layer and its fabrication method. The solar cell comprises, from bottom to top, a conductive substrate, a wide-bandgap perovskite solar cell, a smart self-healing tunneling layer, a narrow-bandgap perovskite solar cell, and an interface top electrode. The tunneling layer comprises a first layer of disulfide-bonded polyurethane with dispersed silver nanoparticles, an intermediate layer of hydrogen-bonded polyamide with dispersed indium tin oxide nanoparticles, and a third layer of ionicly cross-linked polyvinyl alcohol with dispersed gold nanoparticles. The fabrication method includes sequentially fabricating the wide-bandgap perovskite solar cell, the smart self-healing tunneling layer, the narrow-bandgap perovskite solar cell, and the interface top electrode on the conductive substrate. This invention repairs defects in the perovskite layer through the smart self-healing tunneling layer, enabling rapid response and maintaining consistently high charge transport performance, thus improving the performance of the all-perovskite tandem solar cell.

The invention discloses a perovskite thin film based on functionalized aromatic amide micromolecules and a preparation method and application thereof, and the preparation method comprises the steps: introducing the micromolecules into a perovskite precursor solution, replacing a traditional anti-solvent process with a mild and controllable gas quenching method, and achieving the preparation of a wide-band gap perovskite thin film with highly uniform initial distribution of a halogen phase. According to the technology, the separation rate of the bromine element is selectively delayed, the crystallization process is optimized, the crystallization quality of the thin film and the carrier transmission efficiency are remarkably improved, meanwhile, the problem of halogen phase segregation caused by ion migration can be inhibited through the continuous passivation effect of small molecules, and the device has high efficiency and long-term working stability. According to the process, harmful substance pollution and raw material waste are reduced, the homogeneous film forming characteristic can be expanded to the field of preparation of perovskite / organic laminated cells and large-area assemblies, and a new path is provided for development of efficient and stable photoelectric devices.

The invention relates to a perovskite precursor solution, a perovskite cell, a laminated cell and a photovoltaic module. The perovskite precursor solution comprises a lead-based perovskite precursor material and an additive, and the structure of the additive is shown as a formula (I); wherein R1 and R2 are respectively and independently selected from one of fluorine substituted phenyl, trifluoromethyl substituted phenyl and aminocyclohexyl, and R1 and R2 at least contain two fluorine atoms. The perovskite precursor solution can effectively improve the crystallization quality of the perovskite thin film; the perovskite thin film prepared by adopting the perovskite precursor solution has fewer defects and better quality; and when the material is applied to the perovskite battery, the material is especially suitable for a wide-band-gap perovskite battery, and the optical performance and the stability performance of the perovskite battery can be effectively improved.

The invention provides a polyaryletherketone composite film as well as a preparation method and application thereof, and relates to the technical field of composite materials. The composite film comprises soluble polyaryletherketone and titanium dioxide and boron nitride wrapped by the soluble polyaryletherketone, and has excellent permselectivity, radiation cooling performance and thermal stability. According to the technical scheme, the titanium dioxide and the boron nitride which have the advantages of high refractive index and wide band gap are introduced, the optical performance of the soluble polyaryletherketone is synergistically optimized, the prepared composite film maintains proper visible light transmittance while improving the near-infrared reflectivity, and the intermediate infrared emission performance is further enhanced; and the radiation cooling capacity is excellent.

The invention discloses a heterojunction broadband polarization sensitive photoelectric detector and a preparation method thereof, and belongs to the technical field of photoelectric detectors. Comprising a substrate; the two-dimensional narrow band gap material is arranged on the substrate; the two-dimensional polarization sensitive material is partially arranged above the two-dimensional narrow-band-gap material and is matched with the energy band of the two-dimensional narrow-band-gap material; the metal electrode is arranged at one end, far away from the overlapped part of the two-dimensional narrow-band-gap material and the two-dimensional polarization sensitive material; the energy band arrangement of the heterojunction is regulated and controlled by applying bias voltage to the detector, so that the energy band arrangement is converted from a type II to a type III. III-type energy band arrangement obtained through II-type conversion can effectively separate, transmit and collect photon-generated carriers under the condition that the III-type energy band arrangement is not affected by heterojunction interface potential barriers, and therefore the responsivity is remarkably improved. And part of photo-induced electrons are transmitted between the two materials through an inter-band tunneling mechanism, so that the response speed is improved on the basis of improving the responsivity.

[Problem] To provide a technique that facilitates observation of an observation target with a plurality of observation lights having different wavelength bands. [Solution] A medical observation system comprising: a light source device that emits broadband light of a first wavelength band, first narrow-band light that excites a first substance that emits first fluorescent light of a wavelength band included in the first wavelength band, and second narrow-band light that excites a second substance that emits second fluorescent light of a wavelength band included in the second wavelength band; the second narrowband light excites a second substance that emits a second fluorescent light of a wavelength band that is not included in the first wavelength band; and a control unit for controlling the light source apparatus, in which the control unit controls the light source apparatus in such a manner that the broadband light and the first narrowband light are irradiated to the observation target in a time-sharing manner in a first mode, and in such a manner that the broadband light and the second narrowband light are irradiated to the observation target in a second mode different from the first mode.

An antireflection optical element formed from an optical material. The optical material includes a first plurality of antireflective surface structures in the form of first protuberances from the optical material. The first plurality of antireflective surface structures are constructed to aid in transmission of a first wavelength range through the optical material. Also included are a second plurality of antireflective surface structures in the form second protuberances from the first plurality of antireflective surface structures. The second plurality of antireflective surface structures are constructed to aid in transmission a second wavelength range through the optical material. The first wavelength range comprises longer wavelengths than the second wavelength range.