127 results about "Broad band" patented technology

Systems and methods can facilitate wide broad-band IVUS for peripheral vascular applications with simultaneous improved resolution and penetration depth. A custom analog front end interface can withstand large voltages and recover to receive a sub-mV pulse from less than one mm away. The custom analog front end interface can be on an interface chip that can be sized to be integrated within a tip of the IVUS catheter to connect micro-cables within the IVUS catheter to the broad-band transducer. The interface chip can also include a dual-stage amplifier having a pulse mode configured to withstand voltage pulses greater than 30 VPP during pulsing and an echo reception mode configured to receive sub-mV echoes during echo reception.

The invention discloses a laminated solar cell structure containing a selective reflection / light transmission optical thin film. The laminated solar cell structure comprises a wide-band-gap solar cell, the selective reflection / light transmission optical thin film and a narrow-band-gap solar cell which are sequentially arranged in the light incidence direction. The selective reflecting / light-transmitting optical thin film is at least used for 1) reflecting high-energy photons to be absorbed and utilized by the wide-band-gap solar cell; and 2) low-energy photons are transmitted to be absorbed and utilized by a narrow-band-gap solar cell. According to the invention, the selective reflection / light transmission optical thin film is used to fully reflect the transmitted high-energy photons to the wide-band-gap top cell without influencing the transmission of low-energy photons, so that the absorption and conversion of the wide-band-gap top cell to the high-energy photons can be improved, the photoelectric conversion efficiency of the laminated cell can be effectively improved, and the laminated cell has a good application prospect.

A calibration light source includes: a broad band light source emitting light in a broad spectral range; and a filter receiving light emitted by the broad band light source and providing structured light by imposing an attenuation pattern exhibiting pattern features at multiple spectral reference lines on the received light such that an emission spectrum of the structured light emitted by the calibration light source exhibits distinct, identifiable emission spectrum features corresponding to the pattern features at the multiple spectral reference lines. A method of calibrating at least one spectrometer using the calibration light source is further disclosed.

A transistor comprising a first drain region split into first and second drain sub-regions aligned lengthwise and separated by a first low conductivity region, a first source region disposed on a first side of the first drain region split into first and second source sub-regions aligned lengthwise and separated by a second low conductivity region, a second source region disposed on a second side of the first drain region opposite the first side, the second source region split into third and fourth source sub-regions aligned lengthwise and separated by a third low conductivity region, a first gate electrode finger disposed over first and second active regions between the first drain region and first source region, and a second gate electrode finger disposed over third and fourth active regions between the first drain region and second source region.

The invention relates to the technical field of solar cells, in particular to a wide-band-gap perovskite solar cell and a preparation method thereof. The preparation method comprises the following steps: preparation of the ITO layer, O2-plasma treatment of the ITO layer, preparation of the hole transport layer, preparation of the perovskite light absorption film layer, coating of PEAI post-treatment salt, preparation of the thermal evaporation C60 electron transport layer, preparation of the SnO2 electron transport layer by an atomic layer deposition method, plating of the ITO transparent conductive electrode by a magnetron sputtering technology, preparation of the metal gate line, and evaporation of the MgF2 antireflection layer. The organic fluorescent material NPBI2 which absorbs ultraviolet light and converts the ultraviolet light into visible light is doped into the perovskite light absorption layer, so that the damage of the ultraviolet light to perovskite is avoided, the perovskite can absorb the visible light to generate power and improve the photoelectric conversion efficiency, and the organic fluorescent material can passivate crystal defects in the perovskite light absorption layer and improve the quality of the perovskite thin film. And the carrier lifetime is prolonged.

A method and a system have been developed to calibrate the total spectral radiance factor (TSRF) obtained from different instruments. A broad-band light source covering the whole visible range as well as the fluorescence excitation wavelengths is used to measure the TSRF, and one or more narrow-band light sources outside of the fluorescent band is used to measure fluorescent spectral radiance factor (FSRF) separately. After that, the TSRF is adjusted by the FSRF, and a calibrated TSRF can be obtained. This can be applied to characterize Optical Brightening Agents (OBAs) as well as other fluorescent materials without requiring any moving part of the instrument to do the calibration.

The invention discloses a multi-metal-component high-entropy metal organic framework material and a preparation method thereof, and belongs to the technical field of new material technology development and environmental governance, and the multi-metal-component high-entropy metal organic framework material is mainly used as a photocatalysis and photo-Fenton material for degrading azo dye pollutants. The high-entropy metal organic framework is prepared by taking various transition metal ions as inorganic components in the framework and polycarboxylic acid functional group ligands as organic components of a framework material, and heating the inorganic components and the organic components in a mixed solvent under the protection of nitrogen to coordinate and self-assemble the inorganic components and the organic components. The selected metal ions and organic ligands are low in cost, the preparation condition is simple, the yield is high, and the obtained multi-metal-component high-entropy metal organic framework material has good photocatalysis and photo-Fenton degradation performance on monoazo dyes under the visible light wave band; the problems of wide band gap, low response to visible light, poor photon-generated carrier separation capability and the like of conventional monometal component MOFs are solved, and a new scheme is provided for an environment restoration material.

The invention discloses a preparation method and application of an imine-linked covalent organic framework material, and belongs to the technical field of photocatalysis. The invention aims to solve the problems that the conventional H2O2 preparation method is high in energy consumption, complex in process, high in cost and not suitable for large-scale production, and the conventional imine-linked COF synthesis method is complex in step, time-consuming in synthesis and single in synthesis method. On the basis of adopting an aldehyde monomer acid pre-activation strategy for the first time, all reactants are directly added into a reaction kettle to be mixed, the imine-linked covalent organic framework material is rapidly synthesized through a solvothermal method, compared with a conventional method, the reaction conditions are simple and convenient to operate, time is saved, and the cost is reduced. The obtained material has the advantages of wide visible light absorption range, narrow band gap, high crystallinity, high photocatalytic activity, high yield and the like; and the obtained imine-linked covalent organic framework material photocatalytic material has good H2O2 production capacity under all light, and has very high practical value.

The invention provides an amide-based additive and an application thereof in preparation of a perovskite solar cell. The molecular structural formula of the acylamino additive is shown as a formula I; r in the formula I is selected from any one of-H,-CH2OH,-CH2Cl and-CH = CH2. According to the invention, the amide-based additive is used in the hole transport layer and the perovskite light absorption layer and can be neutralized with PEDOT / PSS of the hole transport layer in the narrow-band-gap perovskite solar cell, so that the reaction between the PEDOT / PSS and perovskite is slowed down, and the growth of perovskite grains is promoted. Meanwhile, when the film is used for a narrow-band-gap perovskite light absorption layer, an amide group can be oxidized into carboxylic acid, oxidation of Sn < 2 + > in a perovskite precursor is avoided, and the defects of the film are reduced; the Pb vacancy is filled and combined by an amide group when the Pb vacancy is applied to a wide-band-gap perovskite absorption layer, so that the defect of a passivated film is improved; therefore, the perovskite energy level is better matched, the film quality is improved, and the photoelectric conversion efficiency and the stability of the perovskite solar cell can be remarkably improved.

A multifunction portable illumination system includes a housing having a power source. A broadband illumination source connected to the power source and capable of producing broadband illuminating light. The system includes an imaging disruption assembly including at least one narrow-band light source capable of generating one or more high intensity light beams (HILB) and a light modifying assembly configured to modify the one or more HILB to produce a Modified HILB. At least one Modified HILB may have the requisite irradiance to cause disruption of an imaging system.

A delivery fiber assembly suitable for delivering broad band light and including a delivery fiber and a connector member. The delivery fiber has a length, an input end for launching light and a delivery end for delivering light. The delivery fiber includes along its length a core region and a cladding region surrounding the core region wherein the cladding region includes a cladding background material having a refractive index Nbg and a plurality of microstructures in the form of inclusions of solid material having refractive index up to Ninc and extending in the length of the longitudinal axis of the delivery fiber, wherein Ninc<Nbg. The plurality of inclusions in the cladding region is arranged in a cross-sectional pattern comprising at least two rings of inclusions surrounding the core region.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

A calibration light source includes: a broad band light source emitting light in a broad spectral range; and a filter receiving light emitted by the broad band light source and providing structured light by imposing an attenuation pattern exhibiting pattern features at multiple spectral reference lines on the received light such that an emission spectrum of the structured light emitted by the calibration light source exhibits distinct, identifiable emission spectrum features corresponding to the pattern features at the multiple spectral reference lines. A method of calibrating at least one spectrometer using the calibration light source is further disclosed.

The application discloses a trace element detection system and method, and belongs to the technical field of spectral quantitative detection. The system comprises a laser, a sample stage and a spectral signal acquisition system. The laser ablates a sample to generate plasma after passing through a half-wave plate, a Glan prism, a dichroic mirror and a lens group. The acquisition system comprises a wide / narrow band spectral signal collection system and a trigger system: the wide band system comprises an axial and first lateral light path, couples full spectrum signals to a spectrometer, and is used for matrix identification; the narrow band system comprises a second lateral collection lens, a light splitting element and a UV / visible double channel, each channel is sequentially provided with a neutral density filter, an ultra-narrow band filter and a plano-convex lens, and is connected to a photomultiplier tube to an oscilloscope, and high-sensitivity detection of specific element characteristic spectral lines is realized; and the trigger system is used for triggering the spectrometer to acquire. The wide band and narrow band collaborative architecture is adopted, and both material matrix identification and high-precision quantitative detection of trace elements are considered.

A vehicle propulsion system including a battery for supplying a direct current (DC), an inverter including a wide band gap transistor for converting the DC to an alternating current (AC) in response to a transistor control signal applied to a gate of the wide band gap transistor, a high voltage power switch coupled in anti-parallel with the wide band gap transistor to provide a path for the current when the wide band gap transistor is turned off, an inverter controller including a power supply for supplying a DC current, a current sensor for detecting a current level of the DC current, and a high voltage transistor for generating the transistor control signal in response to a variation of the current level and the DC current, and an electric motor configured to generate an electromotive torque in response to the AC voltage to propel a vehicle.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The invention discloses a wide-band-gap perovskite solar cell and a full-perovskite laminated solar cell. Methyl ammonium bromide and guanidine bromide are jointly doped into the perovskite precursor solution to partially replace formamidine iodide, and a multi-element A-site alloy structure is introduced into the perovskite solar cell, so that defects in a perovskite layer are reduced, the service life of a carrier is prolonged, surface non-radiation is inhibited, the voltage loss of a device is reduced, and the performance of the device is improved. Therefore, the performance of the perovskite solar cell is obviously improved.

The invention relates to the technical field of new energy, and discloses a perovskite thin film band gap gas phase broadening processing method and a solar cell based on the perovskite thin film band gap gas phase broadening processing method.The band gap broadening method comprises the steps that firstly, a narrow-band-gap perovskite thin film is prepared and placed in a closed cavity, and meanwhile a gas phase broadening processing material is placed in the closed cavity; the cavity is vacuumized, and the target pressure intensity is regulated and controlled; heating the chamber to sublimate the broadening material into a gas-phase atmosphere, and realizing a gas-phase diffusion broadening reaction through temperature and pressure preservation; and finally, carrying out annealing treatment to obtain the wide-band-gap perovskite thin film. The method can realize accurate and controllable regulation and control of the perovskite material band gap, does not need to use toxic and harmful solvents in the whole process, is compatible with a plurality of initial film forming processes such as a wet method and a dry method, provides a green and industrialized technical scheme for preparation of the efficient wide-band-gap perovskite material, and has wide application prospects. The method is especially suitable for the preparation requirement of the wide band gap material for the top cell of the laminated solar cell.

Anti-reflective optical structures are disclosed. The anti-reflective optical structures include sub-wavelength structures in order to produce one or more index of refraction gradients within the anti-reflective optical structures. The one or more index of refraction gradients can reduce reflection of light over a broad band of wavelengths.

A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner, and a third region and a fourth region arranged between the first and second regions in different positions in a first direction. In a cross section perpendicular to the first direction, the gate electrode in the fourth region has a cross-sectional area smaller than that of the gate electrode in the third region.

The application belongs to the technical field of display, and particularly relates to an IGZO thin film transistor based on gradient gallium doping and hydrogen plasma treatment and a preparation method thereof. The application adopts ALD technology to construct a three-section linear gradient Ga-doped active layer, the bottom low Ga area ensures efficient carrier transport, the migration rate can reach 58.7 cm 2 Vs, the top high Ga area uses the high electronegativity of Ga-O bond and the wide band gap characteristics to inhibit the back channel defects, the Delta Vth under NBITS test is as low as 2.2 V, and the stability is improved by more than 5 times compared with the undoped device. In-situ hydrogen / oxygen plasma composite treatment is carried out in the ALD chamber, the saturation dangling bond is compensated, the interface state density is controlled to be ≤10 12 cm ‑2 eV ‑1 , and the sub-threshold swing is optimized. Periodic pauses are introduced in the active layer deposition, the film surface roughness is ≤0.5 nm; a two-step method is used for contact hole etching, and the top high Ga layer is ≥5 nm. The comprehensive performance meets the high-end application requirements such as high-resolution display and flexible display, and the application value and market competitiveness are remarkable.

The utility model belongs to the technical field of green Chinese onion planting, and provides an auxiliary bundling device for green Chinese onion seedling transplanting, which comprises a bonding part and a winding part, the bonding part comprises a support frame, a rotating wide belt, a plurality of spacing pieces, a placing frame, a lower adhesive tape wheel, an upper adhesive tape wheel, a rotating shaft and a pressing cotton wheel, the spacing pieces are sequentially arranged in an annular array mode in the length direction of the rotating wide belt. The outer wall of the rotating shaft is sleeved with the pressing cotton wheel, and the pressing cotton wheel, the lower rubber belt wheel and the upper rubber belt wheel are oppositely arranged. And the winding part comprises a steering plate, a chassis, a threaded rod, a fixed cylinder, a compression spring, a hinge plate and a placement disc. According to the auxiliary bundling device for green Chinese onion seedling transplanting, green Chinese onions are bundled, overall transplanting during planting is facilitated, the labor intensity of workers is reduced, time and labor are saved, and application and popularization are facilitated.

The utility model provides a photovoltaic power generation module and a photovoltaic power generation system. The photovoltaic power generation module comprises a laminated photovoltaic module and an electric energy conversion device. The laminated photovoltaic assembly comprises a first battery assembly and a second battery assembly which are arranged in a laminated mode, one of the first battery assembly and the second battery assembly is a wide-band-gap battery assembly, and the other one is a narrow-band-gap battery assembly. By adopting the design scheme provided by the utility model, on the basis of not transforming the first battery assembly and the second battery assembly, the output voltage of the first battery assembly and the output voltage of the second battery assembly are matched and adjusted through the electric energy conversion device, so that the system suitability of the whole laminated photovoltaic assembly is improved. Therefore, loss caused by transformation of the first battery assembly and the second battery assembly and mismatch loss caused by influence of environmental factors can be avoided, the power generation efficiency of the laminated photovoltaic assembly can be improved, and the power generation efficiency of the whole photovoltaic power generation module can be improved.

A reflective delay structure with uniform characteristics in a wide band is provided. A reflective retarder structure 200 has a multilayer structure including a metal reflective layer 210, a dielectric spacer layer 220, and an anisotropic structural layer 230. The anisotropic structural layer 230 includes a plurality of metal components 232 made of an aluminum-based metal.

Etch-free optical metasurface (free space optical resonator) supporting million-quality-factor resonances at visible wavelengths in free space and associated systems and methods are described. In an embodiment, a free space optical resonator includes: a low refractive index layer; a high refractive index layer having a wide band gap; and a low refractive index resist layer. The high refractive index layer is disposed between the low refractive index layer and the resist layer. The resist layer includes a 2-D subwavelength periodic pattern of openings. The low refractive index layer, the high refractive index layer and the low refractive index resist layer are arranged as a vertical stack. The optical resonator is lossless at visible wavelengths of light.

The invention provides a method for preparing a transparent antimony-based chalcogenide film and a photoelectric detector through selective deposition. The transparent photoelectric detector structure provided by the invention comprises a transparent glass substrate, a patterned substrate, a light absorption layer, a wide-band-gap oxide covering layer and a transparent conductive electrode. The transparent light absorption layer is an antimony-based chalcogenide film and is selectively deposited on the patterned substrate. The antimony-based chalcogenide film has different growth orientations and adhesion coefficients on different substrates, and regional selective deposition of the antimony-based chalcogenide film on the patterned substrate can be realized by regulating and controlling the temperature of the substrate. The method provided by the invention breaks through the limitation of the existing transparent photoelectric detector material, and avoids the pattern edge interface damage caused by the traditional patterning methods, such as a stripping method, an etching method and a laser ablation process. The prepared transparent photoelectric detector has the advantages of being simple in preparation, accurate in transparency regulation and control, wide in spectral response in the range of 405-980 nm and the like.

A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.

A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.

The present invention discloses a band - pass filter film with an extended stop band and its regulation method. The band - pass filter film is composed of a substrate, an admittance - matching film stack, a broadband filter film stack, a narrow - band filter film stack, and a ripple - optimization film stack. In terms of functional design, the admittance - matching film stack is used to adjust the equivalent interface admittance at the center wavelength between the substrate and the admittance - matching film stack to be the same as that of the low - refractive - index film. The broadband filter film stack is used to extend and adjust the stop band. The narrow - band filter film stack is used to design the band - pass spectral shape. The ripple - optimization film stack is used to optimize the ripple performance in the band - pass region. The method for regulating the extended stop band is to realize the movement of the stop band by adjusting the thickness of the transition layer between the resonant cavities of the broadband filter film stack. The advantages of the present invention are that the main body of the film system adopts a film system with regular thickness, direct optical monitoring can be used, the film system is easy to develop, the effective extension and free adjustment of the stop band are realized, and it is suitable for the development of integrated filter for multi - channel remote sensing systems.

This invention provides a wide-bandgap perovskite thin film, a perovskite tandem solar cell, and a method for preparing the same, relating to the field of photovoltaic technology. The method for preparing the perovskite thin film includes: adding a perovskite structural material and an organic additive to an organic solvent to obtain a perovskite precursor solution; spin-coating the perovskite precursor solution onto a substrate; and annealing the substrate to obtain the perovskite thin film. The organic additive includes a material containing a thiophene dioxide framework. The organic additive used in this invention can effectively regulate the crystallization rate of mixed halides, delay crystallization, enhance the uniform distribution of the mixed halide phase, reduce the defect density in the wide-bandgap perovskite thin film, and significantly improve the power conversion efficiency and stability of the solar cell, thereby obtaining a high-performance tandem solar cell.