452 results about "Long wavelength" patented technology

The invention belongs to the technical field of ceramics and slurry thereof, and particularly relates to fiber-reinforced ceramic photocuring slurry, a preparation method and a reinforced ceramic material. The slurry provided by the invention consists of ceramic powder, ceramic composite short fibers, light-cured resin, a photoinitiator, a dispersing agent, a plasticizer and the like, wherein the ceramic composite short fibers are zirconium oxide and silicon oxide composite fibers; the light-cured resin contains a photosensitive resin monomer and a prepolymer; and the photoinitiator is compounded by a short-wavelength initiator and a long-wavelength initiator. The preparation method comprises the following steps: modifying the ceramic composite short fibers with a silane coupling agent, mixing the modified ceramic composite short fibers with all the materials, and carrying out ball milling and defoaming. The obtained slurry is subjected to 3D printing photocuring molding and degreasing sintering, and a reinforced ceramic material can be prepared. The slurry can be used for manufacturing a high-performance ceramic material through composite short fiber synergistic enhancement, long and short wavelength initiator synergistic curing and fiber surface modification, and the curing depth, the three-point bending strength and the fracture toughness are remarkably improved.

The invention provides a transcendental extreme ultraviolet light source device which comprises a free electron laser main body which comprises an undulator system and an optical resonant cavity. The undulator system comprises a modulation section undulator and a radiation section undulator; the optical resonant cavity comprises resonant cavity reflectors and a dispersion section, and the modulation section undulator, the dispersion section undulator and the radiation section undulator are sequentially arranged in the direction of an electron beam and are all located between the resonant cavity reflectors; the resonant wavelength output by the radiation section undulator is 1 / h of the resonant wavelength of the modulation section undulator, h is the harmonic number, and when the resonant wavelength output by the radiation section undulator is 6-7nm, the radiation wavelength reflected by the resonant cavity is h times of the resonant wavelength output by the radiation section undulator, so that the resonant cavity is prevented from adopting a reflector with the reflection wavelength of 6-7nm. According to the device, the radiation of the target wavelength is output by using harmonic waves, and a reflector with relatively long wavelength and mature technology can be directly used; various accelerators are compatible, the energy efficiency of the accelerators is greatly improved, and power consumption is reduced.

The invention discloses a high-efficiency erbium-ytterbium co-doped fiber laser for long-wavelength peak shifting pumping. The laser is characterized in that pump light enters an active fiber through a pump coupling device; the active optical fiber is doped with erbium ions and ytterbium ions, part of the pump light entering the active optical fiber is absorbed by the ytterbium ions, and part of the pump light entering the active optical fiber is absorbed by the erbium ions; ytterbium ions are transited from a ground state 2F7 / 2 to an excited state 2F5 / 2 energy level, cross relaxation occurs between the ytterbium ions and ground state erbium ions nearby the ytterbium ions, energy is transferred to the erbium ions, and the erbium ions are relaxed to a 4I13 / 2 energy level after transition from 4I15 / 2 to 4I11 / 2 is completed; erbium ions absorb pump light, transition from a ground state 4I15 / 2 to a 4I11 / 2 energy level and then relaxation to a 4I13 / 2 energy level are carried out, the erbium ions of the 4I13 / 2 energy level generate laser gain of 1.5 microns, and when the gain exceeds loss of a laser resonant cavity formed by the first resonant cavity feedback device and the second resonant cavity feedback device, 1.5 microns-band laser oscillation is formed and is output through the second resonant cavity feedback device. The influence of amplified spontaneous emission of ytterbium ions and excited state absorption of erbium ions on the efficiency of the laser is weakened, and the efficiency of the laser is improved.

The invention discloses an optical thin film thickness monitoring device and an optical thin film coating system, and belongs to the technical field of vacuum coating. A workpiece disc of the optical film thickness monitoring device is provided with a monitoring hole group, the monitoring hole group comprises a first through hole, a second through hole and an interval shielding area, and a film coating monitoring piece is arranged in the first through hole; the irradiation light source is used for emitting light signals to the monitoring hole group; the receiving assembly comprises a light converging element and at least two grating monochromators. The actual physical or optical thickness of the thin film can be calculated by monitoring the transmission or reflectivity of multiple wavelengths and combining the dispersion of the material, and the precision is higher than the precision of monitoring the thickness of the single-wavelength thin film. A plurality of grating monochromaters respectively and correspondingly monitor one wavelength, each grating monochromator can freely select the wavelength, the wavelength selection range is wide, and the problems that the monitoring wavelength is changed and the positioning precision deviation is large in the same grating monochromator are solved. According to the invention, the optical film thickness measurement precision in the online monitoring film coating process can be improved, and the film coating success rate is improved.

A line narrowing gas laser device includes an actuator changing a center wavelength of pulse laser light, and a processor controlling the actuator. The processor reads parameters including a number of irradiation pulses of pulse laser light to be radiated to one location of an irradiation receiving object, a shortest wavelength, and a longest wavelength; sets a first pattern with which the center wavelength is changed to approach the longest wavelength from the shortest wavelength and a second pattern with which the center wavelength is changed to approach the shortest wavelength from the longest wavelength such that at least one of the first pattern and the second pattern when the number of irradiation pulses is an even number is different from corresponding one when the number of irradiation pulses is an odd number; and controls the actuator so that the first pattern and the second pattern are alternately performed.

The invention discloses a group III nitride two-color resolution detector, an imaging array and an imaging method. The detector comprises a substrate layer, a wide forbidden band layer, a narrow forbidden band layer, an electrode cathode and an electrode anode. The array comprises a plurality of III-nitride two-color resolution detectors which are arranged in parallel. The method comprises the steps that an optical signal enters from the top of the detector, a long wavelength component in the incident light is absorbed in a narrow forbidden band layer, a short wavelength component is sequentially absorbed in the narrow forbidden band layer and a wide forbidden band layer, and the detector works under zero bias voltage or negative bias voltage to generate a negative current signal to be output; the detector works under the positive bias voltage to generate positive current output; and collecting output current signals to obtain imaging results of two different wavelengths. According to the invention, the wavelength selection detection effect and the two-color resolution detection imaging effect can be realized by a single device without filtering. The III-nitride two-color resolution detector, the imaging array and the imaging method can be widely applied to the technical field of photoelectric detection imaging.

The invention belongs to the technical field of analysis and detection, and particularly relates to a beta-galactosidase response type hemicyanine near-infrared fluorescent probe, a preparation method thereof and application of the beta-galactosidase response type hemicyanine near-infrared fluorescent probe as a tumor organ imaging probe. The near-infrared fluorescent probe provided by the invention takes a water-soluble hemicyanine skeleton as a fluorophore, so that the biocompatibility of the near-infrared fluorescent probe is improved; based on the principle that beta-galactose can be selectively cut by beta-galactosidase, a galactose structure with a self-leaving group is used as a response group, selective quick response to the beta-galactosidase is achieved, and high sensitivity to the beta-galactosidase is shown. The near-infrared fluorescent probe provided by the invention can emit near-infrared fluorescence with long wavelength, has lower background fluorescence and good penetration depth, and can be directly used for detecting organoids containing the matrigel without eliminating the matrigel, so that the organoids are prevented from being damaged or additional experimental variables are prevented from being introduced in the process of eliminating the matrigel.

The present invention discloses a dual-color infrared detector, which comprises a mid-wavelength infrared detector and a long-wavelength infrared detector arranged in a stacked manner. The mid-wave channel absorption layer of the mid-wavelength infrared detector is a P-type InAs / InAsSb superlattice or a P-type InAsP / InAsSb superlattice, the long-wave channel absorption layer of the long-wavelength infrared detector is a P-type InAs / GaSb superlattice, and the mid-wave channel barrier layer of the mid-wavelength infrared detector and the long-wave channel barrier layer of the long-wavelength infrared detector are both N-type InPSb / InAs superlattices. The present invention also discloses a manufacturing method of the dual-color infrared detector. The mid-wave channel absorption layer of the dual-color infrared detector of the present invention adopts an InAs / InAsSb or InAsP / InAsSb superlattice, and the long-wave channel absorption layer adopts an InAs / GaSb superlattice, thus ensuring the best performance of the devices in each waveband.

An LED includes first / second doped layers with active region(s) therebetween emitting a first wavelength. A wavelength converter on a first LED surface absorbs the first wavelength and emits a second, longer wavelength. A second LED surface is against a substrate surface. A first electrical contact on the first LED surface extends along LED sidewalls, separated from the active region(s) and second doped layer by an insulating layer, connecting the first doped layer to a first contact pad. In some instances, contact pads are on the substrate surface; a second electrical contact extends onto LED sidewalls, connecting the second doped layer to a second contact pad. In some other instances contact pads are on laterally-extending portions of the second doped layer. The insulating layer separates the first contact pad from the second doped layer; a second contact pad is in direct electrical contact with the second doped layer.

An organometallic complex having an emission peak in a long wavelength region (a visible region having a wavelength of 700 nm or greater or a near-infrared region) is provided. The organometallic complex has a structure represented by General Formula (G1), in which a ligand having a quinoxaline skeleton is coordinated to a central metal, and an electron-withdrawing group (e.g., fluorine, a cyano group, a trifluoromethyl group, a trifluoromethylsulfonyl group, or a pentafluorosulfanyl group) is included as a substituent at at least one substitutable position of the benzene ring of the quinoxaline skeleton of the ligand.

Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorp-tion spectrum of the phosphorescent compound.

A light-emitting device includes a transparent substrate less than 60 μm thick, a semiconductor diode structure on one surface of the substrate, and a wavelength-converting layer less than 50 μm thick on the other surface and the sidewalls of the substrate. The wavelength-converting layer includes luminescent particles having D50 less than 20 μm that are bound together or to the substrate by an inorganic coating medium less than 700 nm thick that is index-matched with the substrate. inorganic binder, optical sidewall coating, and an optical sidewall structure. The luminescent particles absorb light emitted by the semiconductor diode structure at a first wavelength and emit light at a second, longer wavelength.

A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long wavelength edge of a reflection peak of the etalon.

An LED includes first / second doped layers with active region(s) therebetween emitting a first wavelength, and is arranged in a vertical die geometry with a reflective first electrical contact on a first LED surface. A wavelength converter absorbs the first wavelength and emits a second, longer wavelength. Some examples include a transparent second electrical contact on a second LED surface or angled LED sidewalls, and the wavelength converter is on the LED surface and the angled LED sidewalls. Some other examples include a second electrode on LED side surfaces extending beyond a second LED surface to form a cavity, with the wavelength converter on the second LED surface at least partly filling the cavity.

Nanofibrous materials and their fabrication by electrospinning are disclosed for passive temperature control on earth and in outer space. The materials combine high solar reflectivity with high thermal emittance in the infrared region, including in the long wavelength atmospheric window region between 8 μm and 13 μm. The materials include nanofibrous PTFE / PEO and silica materials. The physical properties of the materials are suitable for extraterrestrial as well as terrestrial applications.

Light-emitting element comprising: a first electrode (103); a light-emitting layer (703) over the first electrode (103), the light-emitting layer (703) comprising a guest material and a host material; and a second electrode (108) above the light-emitting layer (703), where the maximum of the emission spectrum of the host material overlaps the absorption band at the longest wavelength side (the side of lowest energy) in the absorption spectrum of the guest material, wherein the difference between the energy value of the maximum of the emission spectrum of the host material and the energy value of the maximum of the absorption band on the lowest energy side in the absorption spectrum of the guest material, said maximum having an absorption wavelength corresponding to a direct transition from the singlet ground state to the lowest excited triplet state of the guest material, is 0.2 eV or less, wherein the maximum of the absorption wavelength of the absorption band on the longest wavelength side lies in a range from 490 nm to 530 nm, and wherein the host material is a material mixture of a heterocyclic compound and an aromatic amine compound or carbazole compound.

Light-emitting device assembly (100; 102) comprising: a substrate (120; 220); a plurality of light-emitting device chips (110; 210) arranged linearly and spatially separated from one another on the substrate (120; 220); and a plurality of wavelength conversion units (130; 230) on surfaces of the plurality of light-emitting device chips (110; 210), wherein the plurality of wavelength conversion units (130; 230) each have regions extending over regions between the plurality of light-emitting device chips (110; 210), wherein each of the plurality of wavelength conversion units (110; 210) has: a longer side extending in a first direction in which the light-emitting device chips (110; 210) are arranged;and a shorter side that is shorter than the longer side, wherein shorter sides of wavelength conversion units adjacent in the first direction of the plurality of wavelength conversion units (110; 210) are spaced apart from each other, wherein side faces of the shorter sides are exposed, wherein each of the plurality of wavelength conversion units (130; 230) has several phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235), and wherein the phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235) are stacked sequentially according to the lengths of wavelengths such that a light-emitting phosphor layer with a shorter wavelength is located at one bottom and a Light-emitting phosphor layers with a longer wavelength are arranged on a surface.

Disclosed is a pulsed laser apparatus and method of generating a laser pulse. The apparatus includes an input coupler configured to receive pumping light from a pumping light source and a seed pulse from a seed pulse generator. The apparatus further includes a doped fiber-optic cable with an input port at a first end configured to receive the pumping light and the seed pulse. The doped fiber-optic cable amplifies the seed pulse to generate an output pulse. Along a first length of the doped fiber optic cable, the pulse spectrum broadens rapidly owing to nonlinearity. Beyond the first length in an extended portion, the output pulse shifts towards longer wavelengths and broadens in both spectral and temporal domains. The apparatus also includes an output port at a second end of the doped fiber-optic cable, wherein the output pulse exits the doped fiber-optic cable at the output port.

The invention discloses a long-wavelength vertical cavity surface emitting laser structure, which belongs to the technical field of semiconductor lasers, and comprises a lower elliptical table top, the lower elliptical table top comprises an elliptical InP-based substrate layer, the top of the InP-based substrate layer is sequentially provided with an InP-based buffer layer and a lower-layer InP-based n-type DBR from bottom to top, the top surface of the lower-layer InP-based n-type DBR is provided with an upper elliptical table top, and the upper elliptical table top is provided with a lower-layer InP-based n-type DBR from bottom to top. The upper elliptical table surface comprises an active region arranged on the top surface of the lower-layer InP-based n-type DBR, the top surface of the active region is provided with an upper-layer InP-based p-type DBR, the top surface of the lower-layer InP-based n-type DBR is provided with a negative electrode, the negative electrode is located on the outer side of the active region, and the top surface of the upper-layer InP-based p-type DBR is provided with a positive electrode. According to the invention, the single-mode performance, the polarization control capability and the device performance are effectively improved, the manufacturing process is simplified, the production cost is reduced, and the device has important application value and market prospect.

To allow a wavelength variable light source and a wavelength variable method that can tune the wavelength of the output light to reliably amplify the light over a wide wavelength range.SOLUTION: A wavelength variable light source 1 includes an optical output unit that outputs ultrashort pulsed light L and can variably change the wavelength of the output ultrashort pulsed light L, a second fiber amplifier 7 that amplifies the ultrashort pulsed light L output from the optical output unit, a filter 8 that filters the ultrashort pulsed light L amplified by the second fiber amplifier 7, and a third fiber amplifier 9 that amplifies the ultrashort pulsed light L filtered by the filter 8. The second fiber amplifier 7 has a higher gain on the short wavelength side than on the long wavelength side. The third fiber amplifier 9 has a higher gain on the long wavelength side than on the short wavelength side. The filter 8 attenuates the amplified spontaneous emission light.SELECTED DRAWING: Figure 1

The utility model discloses an OWS earphone with excellent bass performance. The OWS earphone comprises an earphone shell, a loudspeaker module, an FPC and a bass board. The loudspeaker module is arranged in the loudspeaker cavity. The bass board is arranged in the loudspeaker cavity, the edge of the bass board is in close contact with the step, the bass board, the step and the end face of the loudspeaker cavity jointly define the bass channel, the input end of the bass channel is matched to be communicated with the loudspeaker cavity, and the output end of the bass channel is communicated with the sound outlet. According to the loudspeaker, the low-frequency component is directly emitted through the bass channel, resonance is not generated, frequency resonance can be generated in a particularly low frequency band such as 100-300 Hz, the bass enhancement effect is achieved, and the purpose of attenuating the high frequency with the short wavelength is achieved through the low-frequency component with the long wavelength without influencing the low-frequency component with the long wavelength, so that the low-frequency component with the long wavelength can be directly emitted through the low-frequency channel, and the low-frequency component with the long wavelength can be directly emitted through the low-frequency channel without generating resonance. Meanwhile, the bass board occupies a very small space and is suitable for the OWS earphone.

The application provides a chemical luminescence substrate with high chemical luminescence intensity, long wavelength and good stability, and a preparation method and application thereof. The chemical luminescence substrate has a structure shown in formula I. In addition, the application provides spontaneous fluorescence wavelength and intensity of the chemical luminescence probe in a physiological environment, and application of the chemical luminescence probe in in-vivo imaging. Test results show that the chemical luminescence probe provided in the application has long-wavelength spontaneous fluorescence (600 nm), can effectively penetrate skin tissue, has high spontaneous fluorescence intensity (> 10 7 p / s / cm 2 / sr), excellent thermal stability (without 1,2-dioxetane structure) and diversified detection groups (suitable for different detection models).

The invention discloses starch-based composite photocatalytic whitening hydrogel as well as a preparation method and application thereof. The preparation method comprises the following steps: compounding a cobalt-modified zirconium-based metal organic framework with oxidized starch, and then preparing the starch-based composite photocatalytic whitening hydrogel through a starch retrogradation method. The PCN-224 (Co) (at) OS composite photocatalytic whitening hydrogel with excellent photocatalytic performance and good biocompatibility is prepared through an in-situ growth method, the hydrogel has adhesion, moisture retention and stability, a more complete pore structure of a metal organic framework material is reserved, and the photocatalytic performance of the hydrogel is brought into play. Compared with traditional hydrogen peroxide blue-light whitening with poor safety, the high-efficiency, lossless and in-situ whitening of teeth is expected to be realized, and a new thought is provided for tooth whitening and development of biomedical green materials, and long-wavelength red light with high biosafety is matched to generate active oxygen to oxidize pigment molecules on the surfaces of the teeth.

A method is provided for statics correction of seismic data comprising a plurality of traces representing signals recorded by each of a plurality of seismic receivers disposed proximate to an area of Earth's subsurface to be evaluated. The signals are in response to one or more actuations of one or more seismic energy sources. The method includes identifying arrival times of refraction events in each of the plurality of traces. Long wavelength statics components and short wavelength statics components are separated from the arrival times. The separated long wavelength statics components are used as input to a refraction analysis to generate a velocity model of Earth's subsurface.

This invention discloses a method for constructing low-frequency models based on a spatiotemporally gated recurrent unit fusion network, relating to the field of petroleum geophysical exploration. This invention proposes a low-frequency model prediction neural network framework for small sample data. This framework uses GRU as the basic unit to fully consider the long-term dependencies of the low-frequency model's time series, ensuring the integrity of long-wavelength information in the constructed low-frequency model. To improve the horizontal continuity of the low-frequency model, a spatiotemporal feature fusion module is designed to transform multichannel data into potential vectors containing spatial information. Simultaneously, envelope information and the initial model serve as prior information to guide the neural network, helping the network generate stable low-frequency model predictions and reduce prediction nonlinearity, further enhancing the network's generalization ability. It also generates spatial perturbations on the original data to produce label data with richer vertical combinations and more diverse types.

Optical element for a radiation imaging device, comprising: a scintillator which receives radiation (100) to emit fluorescence light with a longer wavelength than the radiation (100) and which is uniformly formed on a radiation-incident substrate surface of a lens-shaped substrate (14) provided in an objective lens (10), wherein the scintillator is made of: a base material which is a solid optical material from which the lens-shaped substrate (14) is formed, and of a predetermined additive.

An endoplasmic reticulum-targeted long-wavelength fluorescent probe for detecting hydroxyl free radicals, and its preparation method and application. The structure of the fluorescent probe is shown in Formula I. The present invention also provides a method for preparing the fluorescent probe and its application in hydroxyl free radical detection. The fluorescent probe provided by the present invention can sensitively and specifically detect hydroxyl free radicals in the long analytical wavelength region of 640 nm. It also has the advantages of selectively targeting the endoplasmic reticulum, low biological background fluorescence signal, minimal photodamage to biological samples, good biocompatibility, and easy preparation and use. It has great application prospects in the fields of chemistry, biology, medicine, etc.

The present invention is applicable to the technical field of luminescent materials, and provides a long-wavelength ultra-wideband sulfide near-infrared luminescent material and a preparation method and application thereof. The chemical formula of the luminescent material is Ca 1‑ x Cr x S, wherein 0≤x≤0.125%; the preparation method comprises the following steps: according to the chemical formula Ca 1‑x Cr x S, weigh the raw materials according to the molar ratio of each element in the raw material Ca:Cr=1-x:x, x is 0≤x≤0.125%, wherein the raw materials are compounds containing Ca and Cr elements respectively; add the weighed raw materials to a dispersant and grind them fully to obtain a uniform white powder, pre-sinter the ground white powder at 700-800°C for 2-3h, then introduce a sulfiding gas, and sinter for 2-3h in a sulfiding environment at 800-900°C to obtain the long-wavelength ultra-wideband sulfide near-infrared luminescent material. The luminescent material provided by the present invention has excellent performance, can effectively meet the needs of near-infrared LED devices, and has been widely used in modern food quality analysis, biological imaging, biomedicine and other fields.

The optical device includes: a first mirror having a first reflection surface and extending along a first direction; a second mirror having a second reflection surface opposed to the first reflection surface and extending along the first direction; and an optical waveguide layer located between the first mirror and the second mirror to allow light to propagate along the first direction; the transmittance of the first mirror is higher than that of the second mirror, and the reflection spectrum corresponding to light incident from the normal direction of the reflection surface of at least one of the first mirror and the second mirror is: including a maximum point, a first inflection point, and a second inflection point on the longer wavelength side than the maximum point in a wavelength band where the reflectance is 90% or more.

The purpose of the present invention is to provide a peripheral sealant for a display element, the peripheral sealant making it possible to achieve a display element that has excellent impact resistance while having excellent curability with respect to long-wavelength light and excellent adhesion with respect to a metal. The present invention provides a peripheral sealant for a display element, the peripheral sealant containing a curable resin and a photopolymerization initiator. The curable resin contains a monofunctional polymerizable compound that has one polymerizable functional group in each molecule, and a polyfunctional polymerizable compound that has two or more polymerizable functional groups in each molecule, wherein the monofunctional polymerizable compound includes: a monofunctional polymerizable compound A which does not have a hydroxyl group, a carboxyl group, or a phosphate group, while having one polymerizable functional group and at least one structure that is selected from the group consisting of a phenyl group, an imide bond, and an alicyclic hydrocarbon skeleton in each molecule; and a monofunctional polymerizable compound B which has one polymerizable functional group and at least one structure that is selected from the group consisting of a hydroxyl group, a carboxy group, and a phosphate group in each molecule. The photopolymerization initiator includes a photopolymerization initiator that has an absorption coefficient of 75 mL / g∙cm or more at a wavelength of 450 nm.