2448 results about "Long wavelength" patented technology

The present invention provides implantable systems that communicate wirelessly with each other using a unique format that enables devices configurations and applications heretofore not possible. Embodiments of the present invention provide communication apparatuses and methods for exchanging information with implantable medical devices. In some embodiments, two implantable devices communicate with each other using quasi-electrostatic signal transmission in a long wavelength/low frequency electromagnetic band, with the patient's body acting as a conductive medium.

A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn+O dope), ZnSe(Cu+I, Ag+I, Al+I dope), GaN(O.C.Va(N) dope) or so.

An LED lamp includes a substrate, an LED chip, and a resin portion. The LED chip is flip-chip bonded to the substrate. The resin portion covers the LED chip and includes at least one type of phosphor that transforms the emission of the LED chip into light having a longer wavelength than the emission. In this LED lamp, the resin portion has at least one side surface. The side surface is separated from another surface that can reflect the outgoing light of the resin portion, surrounds the side surfaces of the LED chip and is curved at least partially.

A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the output light. The device can be used to produce broad-spectrum color light, such as white light.

A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

The light emitting device comprises a substrate (2), a positive electrode (6) and a negative electrode (4) formed on the substrate (2), a light emitting diode (8) connected to the positive electrode (6) and the negative electrode (4), the transparent resin (12 and 14) that covers the light emitting diode (8), a fluorescent material (16) that absorbs at least part of light emitted by the light emitting diode (8) and converts it to light of longer wavelength, and the lens that changes the direction of light emission from the light emitting diode (8) and/or the fluorescent material (16). The resin (12 and 14) includes the fluorescent material (16) and is formed so as to constitute the lens of substantially semi-cylindrical shape, and the fluorescent material (16) included in the resin (12 and 14) is distributed with a higher concentration in a region near the surface of the light emitting diode (8) than in a region near the surface of the portion that constitutes the lens.

A light-emitting element includes a first electrode; a first light-emitting layer over the first electrode, containing a first phosphorescent compound and a first host material; a second light-emitting layer over the first light-emitting layer, containing a second phosphorescent compound and a second host material; a third light-emitting layer over the second light-emitting layer, containing a third phosphorescent compound and a third host material; and a second electrode over the third light-emitting layer. Between peaks of emission spectra of the first, second, and third phosphorescent compounds, the peak of the emission spectrum of the second phosphorescent compound is on the longest wavelength side and that of the emission spectrum of the third phosphorescent compound is on the shortest wavelength side. The third host material has higher triplet excitation energy than the first host material and the second host material.

The present invention provides a continuously tunable external cavity laser (ECL) with a compact form factor and precise tuning to a selected center wavelength of a selected wavelength grid. The ECL may thus be utilized in telecom applications to generate the center wavelengths for any channel on the ITU or other optical grid. The ECL does not require a closed loop feedback. A novel tuning mechanism is disclosed which provides for electrical or mechanical tuning to a known position or electrical parameter, e.g., voltage, current or capacitance, with the required precision in the selected center wavelength arising as a result of a novel arrangement of a grid generator and a channel selector. The grid generator exhibits first pass bands which correspond to the spacing between individual channels of the selected wavelength grid and a finesse which suppresses side band modes of the laser. The channel selector exhibits second pass bands that are wider than the first pass bands. In an embodiment of the invention the second pass bands have a periodicity substantially corresponding with the separation between the shortest wavelength channel and the longest wavelength channel of the selected wavelength grid and a finesse which suppresses channels adjacent to the selected channel. The broad second pass bands of the channel selector reduce the sensitivity of the ECL to tuning variations about the selected channel, thus avoiding the requirement of a closed loop feedback system to control the channel selector.

A device and method for providing illuminating light utilizes quantum dots to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the illuminating light. The quantum dots may be included in the light source, a light panel and/or an optional interface medium of the device.

The invention discloses a fast manufacturing method of three-beam laser compound scanning. The method comprises the following steps of: firstly utilizing long-wavelength laser (CO2 laser) for preheating the metal powder, then utilizing short-wavelength laser (YAG or optical fiber laser) for fusing the metal powder and finally utilizing long-wavelength laser (CO2 laser) to carry out heat treatment to the frozen metal. The fast manufacturing method uses the three beams of laser to carry out compound scanning, namely uses long-wavelength laser to preheat, short-wavelength laser to fuse and then long-wavelength laser to carry out heat treatment, can realize the compound process of preheating, fusion and heat treatment of the metal powder. The three beams of laser compound scanning mode can reduce internal stress of the metal part, avoid warping and cracking, improve organization and improve performance.

Flow rate measurement system includes two measurement regions 14,16 located an average axial distance .DELTA.X apart along the pipe 12, the first measurement region 14 having two unsteady pressure sensors 18,20, located a distance X.sub.1 apart, and the second measurement region 16, having two other unsteady pressure sensors 22,24, located a distance X.sub.2 apart, each capable of measuring the unsteady pressure in the pipe 12. Signals from each pair of pressure sensors 18,20 and 22,24 are differenced by summers 44,54, respectively, to form spatial wavelength filters 33,35, respectively. Each spatial filter 33,35 filters out acoustic pressure disturbances P.sub.acoustic and other long wavelength pressure disturbances in the pipe 12 and passes short-wavelength low-frequency vortical pressure disturbances P.sub.vortical associated with the vortical flow field 15. The spatial filters 33,35 provide signals P.sub.as1,P.sub.as2 to band pass filters 46,56 that filter out high frequency signals. The P.sub.vortical -dominated filtered signals P.sub.asf1,P.sub.asf2 from the two regions 14,16 are cross-correlated by Cross-Correlation Logic 50 to determine a time delay .tau. between the two sensing locations 14,16 which is divided into the distance .DELTA.X to obtain a convection velocity U.sub.c(t) that is related to an average flow rate of the fluid (i.e., one or more liquids and/or gases) flowing in the pipe 12. The invention may also be configured to detect the velocity of any desired inhomogeneous pressure field in the flow. The invention may also be combined with an instrument, an opto-electronic converter and a controller in an industrial process control system.

A diffractive optical element for guiding a light having a color spectrum characterized by a plurality of wavelengths longer than a shortest wavelength, lambdaB, and shorter than a longest wavelength, lambdaR, the light striking the diffractive optical element at an angle greater than a first field-of-view angle, alpha<->FOV, and smaller than a second field-of-view angle, alpha<+>FOV. The diffractive optical element comprising a linear grating being formed in a light-transmissive substrate. The linear grating is characterized by a pitch, d, selected so as to allow total internal reflection of a light having wavelength of lambdaB and a striking angle of alpha<->FOV. The light-transmissive substrate is characterized by an index of refraction, ns, larger than a minimal index of refraction, nMIN, which is selected so as to allow total internal reflection of a light having wavelength of lambdaR and a striking angle of alpha<+>FOV.

The present invention provides an organic electroluminescent element which is superior in luminance, reliability, and thermal stability and is capable of selectively emitting light with comparative long wavelengths such as red and good color purity and a light-emitting device or display device incorporated therewith. The organic electroluminescent element consists of a glass substrate (1), an anode (2), a hole transporting layer (10), an emitting layer (11), an electron transporting layer (12), and a cathode (3), which are sequentially laminated on top of the other. The emitting layer (11) is formed from a mixture composed of at least one species of the styryl compound represented by the general formula [I] below and a material with charge transporting capability.

Y—CH═CH—X   General formula [I]

(where X denotes an aryl group (such as phenyl group) which has a substituent group (such as cyano group and methyl group), and Y denotes a group having a skeleton of aminophenyl group or the like.)

A semiconductor light emitting device comprises: a semiconductor light emitting element that emits first wavelength light; a first fluorescent material that absorbs the first wavelength light and emits second wavelength light having a longer wavelength than the first wavelength light; and a second fluorescent material that absorbs the first wavelength light and emits third wavelength light having a longer wavelength than the second wavelength light. The first fluorescent material and the second fluorescent material are represented by a common chemical composition formula. The first wavelength light, the second wavelength light, and the third wavelength light are combined into light emission of mixed color.

Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

CD-GISAXS achieves reduced measurement times by increasing throughput using longer wavelength radiation (˜12×, for example) such as x-rays in reflective geometry to increase both the collimation acceptance angle of the incident beams and the scattering signal strength, resulting in a substantial combined throughput gain. This wavelength selection and geometry can result in a dramatic reduction in measurement time. Furthermore, the capabilities of the CD-GISAXS can be extended to meet many of the metrology needs of future generations of semiconductor manufacturing and nanostructure characterization, for example.