67 results about "Long wavelength" patented technology

Light-emitting device assembly (100; 102) comprising: a substrate (120; 220); a plurality of light-emitting device chips (110; 210) arranged linearly and spatially separated from one another on the substrate (120; 220); and a plurality of wavelength conversion units (130; 230) on surfaces of the plurality of light-emitting device chips (110; 210), wherein the plurality of wavelength conversion units (130; 230) each have regions extending over regions between the plurality of light-emitting device chips (110; 210), wherein each of the plurality of wavelength conversion units (110; 210) has: a longer side extending in a first direction in which the light-emitting device chips (110; 210) are arranged;and a shorter side that is shorter than the longer side, wherein shorter sides of wavelength conversion units adjacent in the first direction of the plurality of wavelength conversion units (110; 210) are spaced apart from each other, wherein side faces of the shorter sides are exposed, wherein each of the plurality of wavelength conversion units (130; 230) has several phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235), and wherein the phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235) are stacked sequentially according to the lengths of wavelengths such that a light-emitting phosphor layer with a shorter wavelength is located at one bottom and a Light-emitting phosphor layers with a longer wavelength are arranged on a surface.

A method is provided for statics correction of seismic data comprising a plurality of traces representing signals recorded by each of a plurality of seismic receivers disposed proximate to an area of Earth's subsurface to be evaluated. The signals are in response to one or more actuations of one or more seismic energy sources. The method includes identifying arrival times of refraction events in each of the plurality of traces. Long wavelength statics components and short wavelength statics components are separated from the arrival times. The separated long wavelength statics components are used as input to a refraction analysis to generate a velocity model of Earth's subsurface.

A vehicle window glass with which it is possible to realize a vehicle space that is favorable to the skin of the occupant is provided. In a vehicle window glass according to the present disclosure, an average transmittance A in a near-infrared wavelength band from 780 nm to 2,500 nm is 65% or less, a value B, which is a percentage (b1 / b2×100) of bl with respect to b2, is 50% or more, where b1 is an average transmittance in a visible-light long wavelength band of 650 nm to 750 nm, and b2 is an average transmittance in a visible-light total wavelength band of 380 nm to 780 nm, and the transmittance has a minimum value in the wavelength band of 500 nm to 600 nm.

A kind of photocatalytic material, its manufacturing method and application, the manufacturing method of photocatalytic material includes the following steps: 1) provide photocatalytic material precursor covered by liquid film, 2) to photocatalytic material precursor irradiation wavelength is 200nm below ray, obtain photocatalytic material.The photocatalytic material has the advantages such as simple manufacturing method and the response value of long wavelength light is significantly improved.

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first pixel; the first pixel includes a first display element, a first color conversion layer, and a first absorption layer; the first display element emits first light; the first absorption layer overlaps with the first display element; and the first absorption layer absorbs the first light. Furthermore, the first color conversion layer is sandwiched between the first display element and the first absorption layer; the first color conversion layer converts the first light into second light; and the second light has a spectrum including a high proportion of light with a long wavelength compared with the first light.

This application relates to the field of wearable device technology, and more particularly to a wearable device. The wearable device body includes a housing, a screen assembly, a motherboard, a functional module, and an elastic wave receiving unit. At least one of the screen assembly and the housing is configured to deform under user operation to generate elastic waves. The elastic wave receiving unit is configured to receive the elastic waves and generate an elastic wave signal. The motherboard is configured to control the functional module to perform corresponding functions when the elastic wave signal matches a target elastic wave signal. The wearable device of this application, by utilizing the elastic wave receiving unit to achieve functional control of the wearable device, not only facilitates user operation but also, because elastic waves are low-frequency waves with high energy and long wavelengths, have strong anti-interference capabilities, thereby improving signal transmission reliability. Furthermore, it eliminates the need for additional openings in the wearable device, thus reducing the difficulty of waterproofing and effectively improving the waterproofness of the wearable device.

The application relates to a manufacturing method of a non-noble transition metal element doped photocatalytic material and application thereof. The manufacturing method of the photocatalytic material comprises the following steps: 1) providing a photocatalytic material precursor covered by a liquid film, wherein the liquid comprises a non-noble transition metal element in the periodic table as a doping element; 2) irradiating the photocatalytic material precursor with rays with a wavelength of 200 nm or below to obtain the photocatalytic material. According to the application, the manufacturing method is simple, and the photocatalytic material can significantly improve the light response value of long-wavelength light.

A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

This invention discloses a photovoltaic module manufacturing method and a photovoltaic module, comprising the following steps: Step 1, preparing multiple back-contact photovoltaic cells; Step 2, connecting adjacent back-contact photovoltaic cells using metal connecting strips, the metal connecting strips having a width of 2 mm to 8 mm and a thickness of 0.01 mm to 0.1 mm; Step 3, forming a reliable connection between the metal connecting strips and the back electrodes of the back-contact photovoltaic cells using a welding process; Step 4, using the metal connecting strips as a light-reflecting layer to increase the reflectivity of the back side of the back-contact photovoltaic cells to long-wavelength spectra, and the surface of the metal connecting strips being polished or coated with a reflective enhancement layer. This application utilizes a photovoltaic module manufacturing method that uses wide metal strip connections to increase back-side light reflectivity, thereby improving module power. The aim is to improve the back-side reflectivity to long-wavelength spectra by optimizing the cell connection structure, achieving light energy recovery and utilization, and thus improving module conversion efficiency.

The application discloses a kind of multiband SPAD light detection structures for laser radar, belong to laser radar with light detector field.The light detection structure includes: P substrate layer, BN buried layer, be located on the upper end of the P substrate layer, and with the deep P well layer being located on the upper end thereof, constitute third avalanche junction;Deep P well layer, be located on the upper end of the BN buried layer, and with the second N well layer being located on the upper end close to the end portion thereof, constitute second avalanche junction;First N well layer, be located on the upper end of the deep P well layer, and with the PB layer being located on the upper end close to the end portion thereof, constitute first avalanche junction.The application is integrated three functional differentiation avalanche junction, respectively realize the accurate capture of short wavelength, medium wavelength and long wavelength photon, three junctions work together can achieve the efficient absorption of full-band photon, greatly improve the detection efficiency of device in complex light environment to multiband photon.

This invention relates to a method for manufacturing a group VA element-doped photocatalytic material and its application. The method for manufacturing the photocatalytic material of this invention includes the following steps: 1) providing a photocatalytic material precursor covered by a liquid film, wherein the liquid includes group VA elements from the periodic table as doping elements; 2) irradiating the photocatalytic material precursor with rays of wavelength below 200 nm to obtain the photocatalytic material. According to this invention, the manufacturing method is simple and can significantly improve the response value of the photocatalytic material to long wavelengths of light.

A stereoscopic image display device is provided, comprising at least: a display portion having light-emitting devices, a first polarizing plate, and a pancake lens assembly. The first polarizing plate includes: a first polarizer; a first retardation layer bonded to the display portion side of the first polarizer; and a second retardation layer bonded to the assembly side of the first polarizer. The pancake lens assembly includes the retardation layer, the slow axis of the second retardation layer is substantially orthogonal to the slow axis of the retardation layer in the pancake lens assembly, the short-wavelength dispersion is 0.84 to 0.88, and the long-wavelength dispersion is 1.01 to 1.04.

This invention relates to an orange-light-emitting zinc oxide quantum dot based on high fluorescence quantum yield. It is synthesized in situ by adding a red fluorescent dye potassium hydroxide methanol mixture to an anhydrous methanol solution of zinc acetate and directly precipitating the particles at 62-64°C. The resulting zinc oxide composite nanomaterial has long-wavelength emission and high fluorescence quantum yield. It can be used as a phosphor in laser diodes to achieve white light emission, thus broadening the application of zinc oxide in optoelectronic devices.

The present invention provides a pulsed light generation apparatus and a pulsed light generation method capable of generating amplified pulsed light over a wide wavelength range. [Solution] The pulsed light generation device 1A comprises an oscillator (oscillator) 2 that oscillates pulsed light as seed light L0, a fiber amplifier (broadbanding unit) 3 that broadens the spectrum of the seed light L0 oscillated by the oscillator 2, a soliton shift fiber (wavelength modulation unit) 7 that modulates the wavelength of the seed light L0 whose spectrum has been broadened by the fiber amplifier 3 using soliton self-frequency shift to generate soliton waves LS and dispersed waves LD originating from the seed light L0, and a parametric amplification unit 12 that parametrically amplifies relatively long-wavelength pulsed light using relatively short-wavelength pulsed light among the soliton waves LS, dispersed waves LD, seed light L0, and their harmonics.

A mirror system for a side or rearview mirror of a vehicle includes a light absorbing layer and an optical film having a plurality of layers disposed on the light absorbing layer. For substantially normally incident light and for at least one polarization state, the plurality of layers includes a reflection band having a substantially flat top region that is at least 100 nm wide. The reflection band includes left and right band edges on short and long wavelength sides, respectively. The plurality of layers has an average optical reflectance R1 in the substantially flat top region that is greater than about 70% and a standard deviation that is less than about 5%. In a blue wavelength range extending from about 420 nm to 485 nm, an average optical reflectance Rb is less than about 0.8 R1.

This invention relates to semiconductor nanoparticles containing an AgAuTe compound composed of Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles of this invention contain 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticles of this invention improve the light absorption characteristics in the long wavelength region and are appropriately compatible with the near-infrared and short-wave infrared regions. Specifically, the absorption wavelength at the long wavelength side of the absorption spectrum of the semiconductor nanoparticles of this invention is 1200 nm or more. (In the formula, x, y, and z are the atomic numbers of Ag, Au, and Te, 0.25 ≤ z / (x+y) ≤ 1. Furthermore, y / (x+y+z) > 0.10.)

Various semiconductor structures comprising embedded tunnel junctions or aperture regions are described. Furthermore, methods for preparing and using such semiconductor structures are disclosed, and these structures can be used, for example, in optoelectronic devices such as vertical-cavity surface-emitting lasers (VCSELs) capable of emitting light at long wavelengths.

The application relates to a coaxial multi-waveband different magnification beam expanding system based on a fold-diffraction hybrid lens, which comprises a first lens group and a second lens group which are coaxially arranged in sequence along the light ray incidence direction, and the axial mechanical distance between the first lens group and the second lens group is fixed; the first lens group is a fold-diffraction hybrid element with positive focal power, the divergence ability of the diffraction surface of the first lens group is enhanced with the increase of the wavelength, so that the total equivalent focal length of the first lens group is increased with the increase of the wavelength; the second lens group is a fold-diffraction hybrid element with positive focal power, the convergence ability of the diffraction surface of the second lens group is enhanced with the increase of the wavelength, so that the total equivalent focal length of the second lens group is decreased with the increase of the wavelength. The application designs a self-adapting optical system which can work coaxially at the fiber outlet directly, and can automatically reduce the long-wavelength light spot to avoid the aperture obstruction, while keeping the short-wavelength light spot large to fill the entrance pupil.

The signal transmission device includes: an antenna section having a plurality of patch antennas; a first signal line electrically connected to each of the plurality of patch antennas for operation with a first polarization; and a second signal line electrically connected to each of the plurality of patch antennas for operation with a second polarization. The signal transmission length of the second signal line can be configured to be 1 / 4 of the wavelength (λg) longer than the signal transmission length of the first signal line.

A monolithic focal plane array (FPA) device and method of fabrication. The method can include forming monolithic photodetectors or FPAs by heteroepitaxial growth of III-V PINs, APDs, or other photodetector devices in etched recesses of a Si-based read-out integrated circuit (ROIC) wafer. In a single-color device example, a wavelength configuring buffer layer and photodetector are grown within the etched recesses using compound semiconductor materials to enable infrared detection at desired wavelength(s). Depending on the application, this growth can be done on a graded compliant buffer layer and / or a selectively transparent buffer layer. And, semiconductor detectors can be incorporated to detect visible and NIR wavelengths in a dual-color device example. Further, the resulting devices can be configured as pixels in a sensor array device coupled to the ROIC device.

Provided are a polarizing plate and an optical display device comprising same, the polarizing plate comprising: a polarizer; and a retardation layer laminated on one surface of the polarizer, wherein the retardation layer comprises a retardation film having nx > nz > ny (nx, ny, and nz are the refractive index in the slow axis direction, the refractive index in the fast axis direction, and the refractive index in the thickness direction of the retardation film at a wavelength of 550 nm) at a wavelength of 550 nm, the alignment direction of the main chain of a resin contained in the retardation film forms -40° to -50° or +40° to +50° with respect to the light transmission axis of the polarizer, the retardation film has a degree of biaxiality of 0.3 to 0.7 at a wavelength of 550 nm, and the retardation film has a short-wavelength dispersion of the degree of biaxiality of 1 to 1.4 and a long-wavelength dispersion of the degree of biaxiality of 0.8 to 1.

This invention relates to the field of light guide plate manufacturing technology, and in particular to a method for manufacturing an anti-blue light composite light guide plate, comprising the following steps: Step 1, UV ink and blue light conversion structural material are respectively disposed on the light guide plate; Step 2, the light guide plate is fed into a UV curing oven for curing to form an anti-blue light composite light guide plate; In Step 1, the blue light conversion structure and UV ink are located on the same side or opposite side of the light guide plate. In this invention, step-by-step printing, inkjet printing or spin coating is used to combine the blue light conversion structure based on low-dimensional colloidal materials or organic mixed materials with printed light guide dots, converting harmful blue light of 400-440nm into longer wavelength visible light, reducing the harm of blue light to the human eye, and realizing healthy and green LED lighting.

This invention discloses a highly efficient solar-excited long-wavelength long-afterglow material, its preparation method, and its applications. The material is characterized by its general chemical formula being Sr. 1‑x‑y Ga 2‑z Si2O8:xEu 2+ yLn 3+ zMn 2+ Where 0 < x ≤ 0.1, 0 < y ≤ 0.2, 0 < z ≤ 0.1; the preparation of the highly efficient solar-excited long-wavelength long-afterglow material is carried out according to the chemical formula Sr 1‑x‑y Ga 2‑z Si2O8:xEu 2+ yLn 3+ zMn 2+ The raw materials were weighed according to the stoichiometric ratio, ground and mixed, and then heated and cooled in a corundum crucible to obtain the product. The high-efficiency sunlight-excited long-wavelength long-afterglow material described in this invention has good crystallinity and stability to light, heat, and humidity. It has multiple emission peaks in the 400-800nm ​​range, and the solid-phase method is used, which does not involve strong acid solvents that pollute the environment, produces no harmful waste, and the synthesized sample does not require further purification. It can be matched with commercial blue light chips and has broad application prospects in the fields of lighting, display lamps, and optical electronics.

To provide an organic light-emitting device with excellent color purity. 【Solution means】The light-emitting layer contains a first compound and a second compound. The first compound is a compound having a luminescence lifetime of 500 [nsec] or more, or a difference between the lowest excited singlet energy and the lowest excited triplet energy of 0.25 [eV] or less. The second compound is a fluorescent light-emitting material. An organic light-emitting device characterized by satisfying the following formula [1]. 8000≦(S1(A)-E(λ max ))×ε [1] S1(A) [eV]: The lowest excited singlet energy of the first compound λ max [nm]: The absorption peak wavelength located on the longest wavelength side among the absorption spectra of the second compound E(λ max ) [eV]: The energy corresponding to λ max ε [M -1 ·cm -1 : The molar absorption coefficient of the second compound at λ max [nm]

The application discloses a wavelength multiplexing metasurface structure and an optical imaging system. The wavelength multiplexing metasurface structure has a first working mode and a second working mode. In the first working mode, a light source irradiates a sample and transmits to the wavelength multiplexing metasurface structure. First incident light transmitted to the wavelength multiplexing metasurface structure has a first wavelength. The wavelength multiplexing metasurface structure performs wavefront regulation on the first incident light to form a first light beam. In the second working mode, the light source irradiates the sample and transmits to the wavelength multiplexing metasurface structure. Second incident light transmitted to the wavelength multiplexing metasurface structure has a second wavelength. The wavelength multiplexing metasurface structure performs wavefront regulation on the second incident light to form a second light beam. The first wavelength is not equal to the second wavelength. The wavelength multiplexing metasurface structure can independently generate the first light beam and the second light beam in the first working mode and the second working mode, respectively, and effectively reduces crosstalk between the first light beam and the second light beam.

To provide a light-emitting device with high emission efficiency and high reliability. A light-emitting layer of the light-emitting device includes a first substance emitting light from a doublet excited state based on f-d transition and a second substance that is a fluorescent substance. The longest-wavelength absorption edge among absorption edges in the absorption spectrum of the first substance is positioned at a wavelength shorter than the wavelength of the longest-wavelength absorption edge among absorption edges in the absorption spectrum of the second substance. The first substance has a short exciton lifetime and high exciton generation efficiency, and efficient energy transfer occurs between the first substance and the second substance; thus, the light-emitting device can have high emission efficiency and high reliability.

A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long-wavelength edge of a reflection peak of the etalon.

The application relates to the technical field of solar cells, in particular to a solar cell, a laminated cell and a photovoltaic module. The groove structure located in a second region has a first pyramid on a groove bottom surface and a texture structure on a groove side wall facing a first region. Multiple reflections of incident light occur on the groove bottom surface and the groove side wall, greatly prolonging the optical path of the light in the cell, increasing the probability of light absorption, and being capable of improving the absorption of long-wavelength red light and near-infrared light. The non-pyramid texture structure of the groove side wall has a relatively small specific surface area, which is beneficial to reducing the transmission distance of carriers on the groove side wall, and further beneficial to reducing the recombination probability of the carriers, so as to improve the photoelectric conversion efficiency of the photovoltaic cell. The groove bottom surface has a relatively lower doping concentration, which is beneficial to reducing the defects of the groove bottom surface, and further beneficial to reducing the recombination probability of the carriers, so as to improve the photoelectric conversion efficiency of the photovoltaic cell.

Methods of manufacturing polyoxotitanates, polymer-polyoxotitanate composite materials and novel polyoxotitanates are provided. The invention enables spectral conversion of sunlight towards longer wavelengths, which is beneficial for increasing 5 available photons for photosynthesis.

This invention belongs to the field of luminescent materials technology and discloses a Cr 3+ Doped broadband near-infrared luminescent materials and their preparation methods. This Cr... 3+ Doped broadband near-infrared luminescent materials, with the general chemical formula A 1或4 M 4‑x EO 12 :xCr 3+ Wherein, A is selected from at least one of Zn, Sr, Mg, or Ba; M is selected from at least one of Ga, Al, In, or B; E is selected from at least one of Ge, Si, Sn, Zr, or Hf; and 0 < x ≤ 2. The Cr... 3+ Doped broadband near-infrared luminescent materials are materials that can be effectively excited by blue light chips, achieve coverage of a wider wavelength range (especially extending to longer wavelengths), and possess both high luminous efficiency and excellent thermal stability.