58 results about "Laser oscillation" patented technology

The invention discloses a high-strength martensitic stainless steel welding method based on dual-laser collaborative oscillation scanning, which is used for welding two workpieces to be welded, at least one of the workpieces to be welded is high-strength martensitic stainless steel, and the method comprises the following steps: carrying out heat treatment on the high-strength martensitic stainless steel, the high-strength martensitic stainless steel comprises, by mass, 0.5% < = C < = 1.1%, 11.0% < = Cr < = 18.0%, 0.5% < = Mo < = 1.2%, 0.1% < = V < = 0.35%, 0.35% < = Mn < = 0.5%, 0.35% < = Si < = 0.45% and the balance Fe. Performing oscillation scanning welding on the two to-be-welded workpieces which are butted, mounted and fixed through first oscillation laser; and laser oscillation scanning in-situ heat treatment is carried out on a hardened area in the weld joint heat affected area through second oscillation laser. By means of the method, the defect problem that high-strength martensitic stainless steel is extremely prone to having welding cracks, hardened areas and the like due to high strength can be avoided, meanwhile, the welding process is simplified, the welding efficiency is improved, and the mechanical property is guaranteed.

In an LD-pumped solid-state laser, where a solid-state laser crystal is excited by excitation light emitted from an LD to cause laser oscillation, and the resulting laser oscillation light of two frequencies is converted into a sum frequency, stable operation and cost reduction are achieved. [Solution] In an LD-pumped solid laser 1 comprising a solid laser crystal 19, an LD 11 that emits excitation light to excite the solid laser crystal 19, a resonator that resonates the light emitted from the solid laser crystal 19, and an optical wavelength conversion element 22 that converts the wavelength of solid laser oscillation light L21 and L22, a multiplexing means 21 is provided that receives the two solid laser oscillation light L21 and L22 from different directions and combines them into one, and the optical wavelength conversion element 22 converts the combined solid laser oscillation light L21 and L22 into a sum frequency.

A pulse generation unit generates a driving voltage signal including a pulse signal. A laser oscillation module oscillates a laser beam by carrying out, based on the driving voltage signal, a pulse oscillating operation. When the power command signal has a voltage command value corresponding to a laser power greater than a predetermined laser power during a high period, the pulse generation unit modulates, in a pulsed manner, a voltage value of the high period of the driving voltage signal so as to alternately repeat, for a preset period of time from a rising time of the high period of the driving voltage signal, a high state in which the voltage value is maintained and a low state in which the voltage value is lowered by a predetermined voltage value without being lowered to a voltage value of a low period of the driving voltage signal.

Provided is a glass material which has a low linear thermal expansion coefficient and which can be used more stably as a laser medium. The glass is characterized by containing, in terms of mol%, 45%-85% of SiO2, 3%-23% of Al2O3, 0%-13% of B2O3, 0%-5% of Li2O, and 0.01%-11% of Ln2O3 (Ln is at least one selected from Ce, Nd, Yb, Er, Pr, Sm, Eu, Tb, Dy, Ho, and Tm). The glass is preferably used as a wavelength conversion member 26 of a laser oscillation device 2 that extracts laser light by emitting excitation light L from an excitation light source 20. The wavelength conversion member 26 is disposed between a resonator 22 and a resonator 24.

A laser beam irradiating unit of a laser processing apparatus includes a laser oscillating mechanism. The laser oscillating mechanism includes a group setting unit configured to, on a condition that a pulsed laser beam is applied at shorter time intervals than a length of time that molten debris is generated, set the number of pulsed laser beams to be applied until a time that the molten debris is solidified and set the number of pulsed laser beams as one group. A time interval setting unit is configured to set a time until heat generated by application of the pulsed laser beams of the one group is cooled, which serves as a time interval between the one group and an adjacent group, and set time intervals of the pulsed laser beams constituting the one group. The laser oscillating mechanism sets a repetition frequency with the one group as one unit.

A laser processing method and apparatus for printed circuit boards are provided, which effectively utilize a laser oscillator to optimize processing efficiency and quality. The laser processing method uses a laser oscillator to perform laser processing by applying RF pulses to oscillate the laser. During laser output after the application of the RF pulse ends, the RF pulse is applied again to continue laser oscillation, and a desired duration of laser light is extracted from the continuously oscillating laser for laser processing of the printed circuit board.

The application discloses a multi-mode vortex laser with adjustable order, comprising: a cavity lens coated with a laser wavelength anti-reflection film system, a first laser output mirror and a second laser output mirror, both of which are plane mirrors, and both of which are coated with a film system partially transmitting laser wavelength on one side and an anti-reflection film system for laser wavelength on the other side; a high-order Laguerre-Gaussian beam is focused by the cavity lens, and the focused beam waist positions of each-order Laguerre-Gaussian mode vortex light are separated under the action of spherical aberration of the cavity lens, and the higher the mode order and the larger the spot size, the closer the focused beam waist of the mode to the cavity lens; the positions of the first laser output mirror and the second laser output mirror are adjusted so as to be located at the waist positions of a certain mode, and the first laser output mirror and the second laser output mirror located at different positions provide feedback for two different-order Laguerre-Gaussian mode vortex lights, so that multi-mode vortex laser oscillation and output are formed.

The invention relates to the technical field of solid laser, and discloses a quasi-three-level laser with end-side composite pumping, which comprises a quasi-three-level laser crystal, an end-side pumping assembly, a side pumping module and a laser resonant cavity. The end face pumping assembly is used for injecting end face pumping light to the end face of the crystal. The side pumping module is used for injecting side pumping light to the side face of the crystal, and the laser resonant cavity and the quasi-three-level laser crystal are matched to form a laser oscillation circuit. Through the arrangement, the end face pumping assembly is used for providing high-power-density pumping light, the problem of high excitation threshold of the quasi-three-level laser crystal is solved, and population inversion and laser gain are effectively established; and meanwhile, large-area and high-pumping power input is carried out by virtue of the side pumping module, so that uniform allocation of a pumping heat load, reduction of a temperature gradient and end surface stress in the crystal and inhibition of a thermal lens effect are effectively realized, consideration of high-power density excitation of the crystal, low thermal stress and uniform thermal distribution is realized, and high-efficiency and high-power laser output of the laser is ensured.

An extreme ultraviolet light generation apparatus includes a first light source outputting first excitation light, a laser oscillator including an active medium and performing laser oscillation by irradiating the active medium with the first excitation light to output the laser light, a measurement instrument measuring a pulse energy and a pulse time width of the laser light, a temperature regulator that adjusts a temperature of a cooling medium that cools the first light source, and a processor. The processor controls the temperature regulator to adjust the temperature of the cooling medium so that the pulse energy measured by the measurement instrument falls within a target range of the pulse energy, and adjust a current value of a current supplied to the first light source so that the pulse time width measured by the measurement instrument falls within a target range of the pulse time width.

The invention provides a laser welding method for a medium-thick-wall solid rocket engine shell. The laser welding method comprises the following steps that S1, a welding face is pretreated; s2, fixing to form a shell assembly; step S3, hoisting; s4, determining a circular seam program by utilizing an industrial robot demonstrator; and S5, a front end socket welding seam between the front end socket and the combustion chamber shell is welded, and the welding process comprises the following steps that S5.1, laser spot welding is conducted; s5.2, laser oscillation penetration fusion welding is carried out; s5.3, MIG welding is carried out; and S6, a rear end socket welding seam between the rear end socket and the combustion chamber shell is welded. According to the method, the welding process is divided into three processes, the operation difficulty is greatly reduced, the fault tolerance range of the process interval range is larger, and the reliability of batch production is higher; and through a step-by-step welding method, digging and discharging are easy, the production precision is greatly improved, and the risk of reworking is reduced.

A system for transmitting laser power to a remote receiver, comprising a laser diode, an optical system for collimating and focusing the laser beam to the receiver, and a scanning system for directing the beam towards the receiver. The beam has a wavelength of 1150 to 1550 nm, a power exceeding 300 mW, an emitter width of 15 to 250 μm, is a spatial multimode beam, and more than 50% of its power is transmitted via TEM. 00 In the mode, less than 15% of its power, and a higher-order TEM with more than 20 (n+m) nm The mode has a laser oscillation cavity with a Fresnel number between 0.01 and 20, and a low-speed axis M of less than 15. 2 , high-speed axis M less than 1.5 2 It has a high-speed axial divergence angle exceeding 60°. The collimated laser beam has a single lobe when imaged up to a range of 10 meters.

The application provides a 2.8 mu m single-frequency fiber laser based on a pump-enhanced saturable absorber and belongs to the technical field of mid-infrared laser. The linear resonant cavity of the laser is composed of a low-refractivity fiber grating and a high-refractivity fiber grating, and a first pump coupler, an erbium-doped fluoride gain fiber, a pump light stripper and a pump-enhanced saturable absorber filter device are sequentially arranged in the cavity. The filter device contains enhanced pump light injected by a second pump source through a second pump coupler and used for exciting the absorption characteristics of the erbium-doped saturable absorption fiber; the laser of the first pump source is used for pumping the gain fiber to generate laser oscillation, and the enhanced pump light is used for forming a MHz-level ultra-narrow band dynamic grating in the saturable absorption fiber. The dynamic grating and the static filter of the fiber grating work cooperatively to realize stable single-longitudinal-mode selection, and finally the single-frequency laser is output from the first fiber end cap. The application realizes compact structure and high stability of 2.8 mu m single-frequency laser output.

The application relates to the field of semiconductor lasers, and discloses an elliptical deep groove narrow ridge semiconductor laser which comprises, from bottom to top, a substrate, an N limiting layer, an N waveguide layer, a quantum hydrazine active layer and a P waveguide layer, the surface of the quantum hydrazine active layer is provided with two shoulder portions, a ridge waveguide is arranged between the two shoulder portions, a groove is formed between the shoulder portions and the ridge waveguide, and elliptical deep grooves are arranged on the two sides of the ridge waveguide, the long arc edges of the elliptical deep grooves intrude into the ridge waveguide to form a narrow ridge waveguide, the elliptical deep groove narrow ridge semiconductor laser suppresses high-order mode participation in laser oscillation through the elliptical deep groove narrow ridge waveguide structure, mode filtering and wave far-field spot optimization of the laser are realized, the purity of the fundamental mode output is effectively improved, and the spot quality is optimized.

To provide a laser device having a higher modulation speed, a high device yield, and improved array compatibility under either cooled or uncooled operating conditions.SOLUTION: An active layer structure 20 between a semiconductor substrate 30 and a grating structure 40 configured for operation, comprising a common active layer, a first facet 50-1 and a second facet 50-2, wherein the grating structure comprises spatially adjacent integrated grating sections, a cladding structure 70 for optical confinement of laser light, a DFB structure 60-1 with a first grating section 42-1, and a DBR structure 60-2 with a second grating section 42-2, the first grating section and the second grating section share a common active layer for the integrated grating section, the DFB structure includes a first optical function as a lasing function, and the DBR structure includes a second DBR structure as an optical feedback.SELECTED DRAWING: Figure 1

A semiconductor laser element includes a laser section configured to cause light to perform laser oscillation, an amplification section configured to amplify the light, an active region extending to the laser section and the amplification section, a first anti-reflection coating provided on an end face of the laser section opposite to the amplification section with respect to the laser section, and a second anti-reflection coating provided on an end face of the amplification section opposite to the laser section with respect to the amplification section. In a plan view, an area of the active region in the amplification section is larger than an area of the active region in the laser section.

This laser oscillation device is provided with: a pair of mirrors; a laser medium; an attenuator that causes the laser light to be in a non-resonant state at a first attenuation rate and causes the laser light to be in a resonant state at a second attenuation rate; and a control unit. The control unit causes the attenuator to maintain the attenuation rate of the second attenuation rate so that the laser light oscillates as a continuous wave during a first period, and causes the attenuator to switch the attenuation rates of the first attenuation rate and the second attenuation rate so that the laser light oscillates as a pulse wave during a second period that is continuous with the first period. The first period is longer than the time from the time at which the first time is switched to the second attenuation rate to the time at which the second time is switched to the second attenuation rate in the second period.

[Problem] To prevent light reflected by a light-emitting unit from returning to a light source and affecting the laser oscillation frequency of the light source. [Solution] This light-receiving device comprises: a measurement optical system that generates measurement light having a frequency that shifts at least discretely to two or more levels; and a light processing unit that causes prescribed oscillation light and return light of the measurement light from an object being measured to interfere with each other. The measurement optical system has a light-emitting unit that transmits the measurement light. The measurement optical system is also capable of transmitting the measurement light through laser resonance caused by at least inner-surface reflection of the light-emitting unit.

This invention discloses a monitoring method for three-dimensional laser oscillation, relating to the field of three-dimensional laser welding. The method includes a laser beam, a first reflecting mirror positioned to the left of the laser beam, a second reflecting mirror positioned in front of the first reflecting mirror, and a third reflecting mirror positioned to the right of the second reflecting mirror. This invention achieves accurate monitoring of the periodic changes in the laser's Z-axis direction by obliquely directing the laser beam onto the weld seam during welding. The laser period is calculated using the geometric relationship between the welding head and the weld seam, and the laser frequency is obtained by analyzing weld seam images captured by a high-speed camera. This method eliminates the need for expensive monitoring equipment, effectively reducing costs and solving the technical problems of existing monitoring equipment, such as high cost, narrow application range, and inability to determine the direction of defocusing.

[Problem] To achieve high output and stable operation in a semiconductor laser-pumped solid-state laser which is provided with an optical wavelength conversion element for converting two solid-state laser oscillation lights into sum frequency. [Solution] An LD-pumped solid-state laser (1) includes: a solid-state laser crystal (19) such as a Pr:YLF crystal; an LD (11) that emits excitation light (L) for pumping the laser crystal (19); and a resonator that resonates the light emitted from the solid-state laser crystal (19). The LD-pumped solid-state laser comprises a wavelength control means, such as a narrow bandpass filter (13), for substantially matching the oscillation wavelength of the excitation light (L) from the LD (11) with the absorption peak wavelength of the solid-state laser crystal (19).　

The invention provides a disc-type regenerative laser cavity for a laser amplifier, a disc-type laser and a laser amplification method. According to the disc-type regeneration laser cavity for the laser amplifier, the disc-type laser and the laser amplification method, laser oscillation is formed on the same disc-type crystal at the same time through two beams of laser with different spatial orientations of the main resonant cavity and the auxiliary resonant cavity, redundant pump light energy of the main cavity can be extracted by adjusting optical parameters of the auxiliary cavity, and the laser amplification efficiency is improved. The thermal pressure of the disc is reduced, and laser pulse energy of the main cavity is shaken and stripped to the auxiliary cavity, so that the laser pulse power output by the main cavity is more stable, the light beam quality is better, and the light beam directivity is more stable.

The invention provides a semiconductor laser element and a manufacturing method thereof, which can stabilize the wavelength of light and improve the efficiency. This semiconductor laser element is provided with: a laser region in which light is laser-oscillated; an amplification region that amplifies the light; an active region extending in the laser region and the magnification region; a first anti-reflection film provided on an end surface of the laser region opposite to the amplification region; and a second antireflection film provided on an end surface of the enlarged region opposite to the laser region, the area of the active region in the enlarged region being larger than the area of the active region in the laser region in plan view.

A vertical light-emitting nanorod laser diode and a method of manufacturing the vertical light-emitting nanorod laser diode are provided, and more specifically, a vertical light-emitting nanorod laser diode can vertically emit light without using a DBR by depositing a nitride-based nanorod LED structure as a thin film on a substrate and using the deposited nanorod LED structure itself as a light reflector for laser oscillation.

The application discloses a side-pumped passive Q-switched laser, and relates to the technical field of lasers.The application comprises a base, a pumping assembly, a gain medium, a laser oscillation assembly, a heat dissipation assembly and an output mirror, wherein the gain medium, the laser oscillation assembly and the output mirror are detachably installed on the base, the pumping assembly is arranged on the side of the gain medium perpendicular to the optical axis direction, and the heat dissipation assembly is installed on the base.The application is provided with the heat dissipation device, and the components in the heat dissipation bellow are air-cooled, which, in cooperation with the side erbium glass passive Q-switched mode, can effectively improve the laser energy and the beam quality, and can fully dissipate the heat of the components on the optical axis, so that the service life of the components is prolonged while the quality of the output laser is ensured.

The invention relates to the technical field of lasers, in particular to a semiconductor laser and a preparation method thereof.The semiconductor laser comprises a stacking structure, the stacking structure comprises a ridge waveguide, and the stacking structure is divided into a laser oscillation area and a light beam angle regulation and control area which are arranged in the first direction; a plurality of grooves which are arranged at intervals in the second direction are formed in the part, connected with the light emitting cavity surface, of the ridge waveguide, and the ridge waveguide between every two adjacent grooves serves as a regulation and control waveguide; the P-type main electrode is positioned on the top surface of the ridge waveguide of the laser oscillation region; the distributed electrodes comprise a plurality of regulation and control electrodes, and the regulation and control electrodes are located on the top surfaces of the corresponding regulation and control waveguides; wherein each regulation and control electrode loads corresponding regulation and control current, so that the light beam angle regulation and control area regulates and controls the light beam angle of the initial laser, and then target laser is output from the light outlet cavity surface. According to the invention, free regulation and control of the laser emission beam angle are realized without arranging an additional beam shaping system, and simplification of the system structure and reduction of the cost are facilitated.

The application relates to the technical field of lasers, in particular to a semiconductor laser and a preparation method thereof. The semiconductor laser comprises a stacked structure, the stacked structure comprises a ridge waveguide, the stacked structure is divided into a laser oscillation area and a beam angle regulation area arranged in a first direction, a part of the ridge waveguide, which is in contact with a light-emitting cavity surface, has a plurality of grooves arranged at intervals along a second direction, and the ridge waveguide between two adjacent grooves serves as a regulation waveguide; a P-type main electrode is located on the top surface of the ridge waveguide of the laser oscillation area; a distributed electrode comprises a plurality of regulation electrodes, and the regulation electrodes are located on the top surfaces of the corresponding regulation waveguides; wherein each regulation electrode is loaded with a corresponding regulation current to regulate the beam angle of initial laser in the beam angle regulation area, and then target laser is output from the light-emitting cavity surface. The application realizes free regulation of the beam angle of laser emission without setting an additional beam shaping system, which is beneficial to simplifying the system structure and reducing the cost.

An object of the present invention is to provide a capillary electrophoresis device and an optical performance diagnostic method for the same that are capable of checking optical performance without performing special work. Therefore, according to the present invention, the capillary electrophoresis device includes a capillary array including a plurality of capillaries, a light source that causes laser light to oscillate, a detecting unit that detects light emitted when the capillary array is irradiated with the laser light, and a control unit that performs predetermined processing based on a signal from the detecting unit. The control unit extracts a predetermined absolute value regarding an optical index based on an image captured by the detecting unit, and calculates the optical index by comparing the extracted absolute value with a predetermined reference value.

The invention discloses a dimming method of an external cavity type large laser gyroscope, which comprises the following steps of: mounting and adjusting an indicating laser, a first angular cavity, a second angular cavity, a third angular cavity and a laser gain tube on a platform, so that indicating laser emitted by the indicating laser passes through geometric centers of Brewster windows at two ends of the laser gain tube; the light sequentially passes through the geometric centers of the reflectors on the first to third angular cavities and is reflected at 90 degrees; a tail piece and a first reflecting mirror are installed and adjusted, so that laser oscillation is achieved through an unfilled-corner three-mirror cavity formed by the first piece, the gain tube, the first corner cavity, the second corner cavity, the third corner cavity and the tail piece; and after the fourth corner cavity is installed, light path adjustment is carried out, so that a light beam obtained after the laser emitted from the first piece is reflected by the fourth corner cavity is coaxial with a laser beam emitted from the tail piece, and a light beam obtained after the laser emitted from the tail piece is reflected by the fourth corner cavity is coaxial with a laser beam emitted from the first piece. The technical problem that when the gain tube is located in the annular cavity, an annular light path is difficult to adjust and close can be solved.

This application provides a timing-tunable passive Q-switched pulsed laser generation device, which can be applied in the field of laser technology. The device includes: a laser source that generates pulsed lasers with different repetition frequencies and pulse positions; a pump module that generates pump light; a gain-Q-switching unit that sequentially receives pump light at its first end and pulsed laser at its second end. Under the action of the pump light, the accumulated number of inverted particles in the gain-Q-switching unit is lower than the initial oscillation threshold; at the moment the pulsed laser is injected into the gain-Q-switching unit, the oscillation threshold of the gain-Q-switching unit decreases, laser oscillation occurs, and a passively Q-switched pulsed laser is output; during the period of pulsed laser injection into the gain-Q-switching unit, a passively Q-switched pulsed laser is continuously output, resulting in a passively Q-switched pulsed laser with the same repetition frequency and pulse position as the pulsed laser; and a beam splitter that reflects the pulsed laser to its second end, transmitting the passively Q-switched pulsed laser.

This invention belongs to the field of laser equipment technology, specifically disclosing an ultra-narrow linewidth vertical external cavity surface-emitting laser (VECS), including a laser resonator unit and an intracavity control unit. The laser resonator unit is used to generate laser oscillation, and the intracavity control unit is used to perform polarization control, mode control, wavelength tuning, and linewidth narrowing of the fundamental frequency light. The laser resonator unit includes a pump light emission system, a gain chip, a folded output mirror, and a back-end mirror. The intracavity control unit includes a beam splitter, a polarization element, a mode control element, a wavelength tuning element, a linewidth narrowing element, and an output coupling mirror. The second harmonic self-suppression of the mode control element is used to control the laser mode in the resonant cavity to achieve single-frequency lasing, which simplifies the design and adjustment difficulty of the mode control element in the resonant cavity of the VECS. The self-injection locking characteristic of the microcavity device in the linewidth narrowing element is used to narrow the output linewidth of the laser, which can achieve a deep narrowing of the laser linewidth and realize ultra-narrow linewidth output.

A method and device for generating 260 nm wavelength low-noise all-solid-state ultraviolet laser, 808 nm laser pumps Nd:YVO4 crystal to generate 914 nm wavelength linearly polarized stimulated radiation fluorescence, the fluorescence is amplified and oscillated in the first laser oscillation cavity and realizes longitudinal mode compression by combining phase modulation longitudinal mode filter, generates 914 nm wavelength low-noise linearly polarized near-infrared laser, and is converted into 457 nm wavelength low-noise linearly polarized blue laser by intracavity frequency doubling; the 457 nm low-noise linearly polarized blue laser pumps Sm:YLF crystal in two directions to generate 605 nm wavelength linearly polarized orange-red stimulated radiation fluorescence, the fluorescence is amplified and oscillated in the second laser oscillation cavity and forms 605 nm wavelength low-noise linearly polarized orange-red laser after phase modulation filtering; the remaining 457 nm wavelength low-noise linearly polarized blue laser and the 605 nm wavelength low-noise linearly polarized orange-red laser of the pumped Sm:YLF crystal are nonlinearly frequency-converted by intracavity sum frequency, the polarization controller is used to optimize the polarization matching degree of the two lasers to improve the sum frequency efficiency, and 260 nm wavelength low-noise all-solid-state ultraviolet laser output is obtained.