435 results about "Optical amplifier" patented technology

A Rydberg sensor may include a probe laser source and a quantum radio frequency (QRF) cavity downstream from the probe laser source and configured to define a path for a plurality of probe laser beam passes within the QRF cavity. A Rydberg sensing region may be within the QRF cavity and in the path of the probe laser beam passes. An optical amplifier may be within the QRF cavity and in the path of the probe laser beam passes. A detector may be downstream from the QRF cavity.

The invention discloses an OEO amplifier with a high-speed hard switching function and an optical transmission system, and relates to the technical field of optical amplifiers, the OEO amplifier comprises three magneto-optical switches, an optical splitter group, a photoelectric detector group, a real-time comparison circuit, a logic gate control circuit and a driving circuit; the photoelectric detector group collects optical signal power to generate an electric signal; the real-time comparison circuit performs voltage threshold judgment on the electric signal; the logic gate control circuit is connected with the output end of the real-time comparison circuit so as to synchronously control the switching states of the three magneto-optical switches according to a voltage threshold judgment result; the driving circuit is used for driving the magneto-optical switch to synchronously execute a switching action; when the OEO amplifier detects that optical signals in any direction are interrupted, all the magneto-optical switches finish synchronous switching within 100 microseconds, and the end-to-end optical signal switching time difference is smaller than 2 picoseconds. The method is suitable for a single-fiber bidirectional optical communication environment requiring high frequency, high precision and high stability.

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

A semiconductor optical amplifier array device includes: a substrate; and a plurality of semiconductor optical amplifiers formed on the substrate, each of the semiconductor optical amplifiers including an active region, and two input-output ports optically connected to the active region and disposed on same facet of the semiconductor optical amplifier array device. The plurality of semiconductor optical amplifiers include a first semiconductor optical amplifier in which length of the active region is equal to a first length, and a second semiconductor optical amplifier in which length of the active region is equal to a second length that is different from the first length.

The invention discloses a relay device and method for long-distance few-mode optical fiber communication, and belongs to the field of optical communication. According to the device, firstly, optical signals transmitted in a few-mode optical fiber are separated into a plurality of independent mode channels through a mode decomposition multiplexer; then, an adjustable light delay unit is configured in each channel, and compensation is carried out according to a difference mode group delay difference pre-calculated or actually measured by a few-mode optical fiber parameter; furthermore, a dimmable amplifier is used for amplifying the signal, power monitoring is carried out at the output end of the amplifier through an optical fiber beam splitter and a photoelectric detector, closed-loop feedback control is formed, and gain of each channel is adjusted in a self-adaptive mode to eliminate mode-dependent loss. According to the invention, signal distortion can be effectively suppressed in an optical domain, the complexity of digital signal processing of a receiving end is reduced, and the transmission distance and the transmission capacity of a few-mode optical fiber mode division multiplexing communication system are remarkably improved.

A Rydberg sensor may include a plurality of Rydberg sensing regions and a probe laser source. An optical path may extend from the probe laser source to feed the Rydberg sensing regions in a series configuration. The sensor may also include at least one optical amplifier for the probe laser source coupled within the optical path between at least one adjacent pair of Rydberg sensing regions.

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

Scalable multi-band wavelength division multiplexing (WDM) transceiver architectures suitable for high-bandwidth optical Compute interconnects (OCI) between computing resources. The WDM wavelength range is divided into two or more color / wavelength bands. Each band of WDM optical signals may be coupled through separate semiconductor optical amplifiers (SOAs) that are tuned to the different bands. The bands may be conveyed through an optical MUX / DeMUX for transmission through an optical fiber. The optical MUX / DeMUX may comprise a band MUX / DeMUX or a polarization MUX / DeMUX.

A pump light generation unit of an optical amplifier pumping device outputs pump light with a single wavelength or a plurality of wavelengths from a plurality of output ports. A pump light multiplexing unit polarization-multiplexes or wavelength-multiplexes the plurality of pieces of pump light which has been output from the pump light generation unit. A polarization scrambler collectively polarization-scrambles the polarization-multiplexed or wavelength-multiplexed pump light which has been output from the pump light multiplexing unit and outputs the polarization-scrambled pump light to an optical waveguide for pump light. The optical waveguide for pump light inputs the pump light which has been polarization-multiplexed or wavelength-multiplexed by the pump light multiplexing unit to the pump light superimposition unit. A pump light superimposition unit multiplexes the polarization-multiplexed or wavelength-multiplexed pump light and signal light. A pump light output port superimposes the pump light on the signal light by outputting the pump light from the pump light superimposition unit to the gain medium so that the pump light propagates in the same direction as the signal light.

The invention relates to the field of semiconductor device and integrated circuit research, in particular to a semiconductor device dose rate effect laser simulation system. Multiple wavelengths and a wide energy range are achieved through the optical fiber laser pulse seed source assembly and the solid laser amplifier assembly, the pulse width can range from 1 ns to 100 microseconds, variable complex waveforms such as square waves, rectangular waves, sine waves and pulse strings are achieved, and pulse laser with the energy range from the nanojoule level to the joule level and adjustable wavelengths and waveforms can be output according to requirements. The high-low energy laser adopts a common-path design, so that the system integration degree is improved; light spots are adjustable from centimeter level to micron level, and global irradiation and micro-area positioning and scanning of an irradiation sample can be realized. According to the invention, dose rate effects under different conditions can be accurately and flexibly simulated, the blank of a high-energy, variable-waveform and multi-wavelength dose rate effect laser simulation system is filled up, and an efficient solution is provided for the reliability research of devices under a complex irradiation environment.

The invention provides an electromagnetic field constraint system and constraint method for a CO2 laser amplifier, and the system comprises a spiral electrode which is wound on a discharge tube of the CO2 laser amplifier, the spiral electrode comprises a first DC positive electrode, a radio frequency positive electrode, a second DC positive electrode and a ground electrode which are sequentially and adjacently arranged, and the current flows through the first DC positive electrode in the electric field direction from the first DC positive electrode to the ground electrode. The electric field direction of the current from the second direct current positive electrode to the ground electrode is partially perpendicular to the electric field direction of the current from the radio frequency positive electrode to the ground electrode; the CO2 laser amplifier discharge tube and the Helmholtz coil are coaxially arranged, and the magnetic field direction of the Helmholtz coil is perpendicular to the electric field direction from the radio frequency positive electrode to the ground electrode. In the discharge area of the CO2 laser amplifier, the strong electromagnetic field restraint system is adopted, the vertical alternating high-voltage electric field and the vertical alternating high-voltage magnetic field are used for restraining plasma movement, the electro-optical conversion efficiency can reach about 20%, the CO2 laser power can be effectively improved, and the arc discharge problem under the high radio frequency power injection condition is avoided.

An optical device includes a generator, a light emitter, a modulator, an optical amplifier, a current source, a storage, and a controller. The generator generates an electric signal of a multilevel amplitude modulation method. The light emitter emits laser light. The modulator modulates the laser light using the electric signal and outputs an optical signal. The optical amplifier optically amplifies the modulated optical signal according to a drive current. The current source adjusts the drive current to be supplied to the optical amplifier. The storage previously stores an information with respect to input-output characteristics of the optical signal in the optical amplifier relative to drive current value of the drive current. The controller acquires, from the storage, the input-output characteristics corresponding to the drive current value of the drive current supplied to the optical amplifier and controls the electric signal based on the acquired input-output characteristics.

The invention discloses an erbium-doped aluminum oxide and silicon nitride heterogeneous integrated on-chip optical amplifier and an integration method thereof. The amplifier is composed of a straight waveguide, an interlayer coupling waveguide and a bent waveguide. The erbium-doped aluminum oxide-silicon nitride heterogeneous integrated waveguide is formed by adopting the processes of low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, oxidation and etching, radio frequency reaction magnetron sputtering, chemical mechanical polishing and the like. According to the structure, signal light pump light is transmitted in the silicon nitride waveguide with the small mode field area in the bent waveguide, so that the compactness of the device is ensured; signal light pump light is coupled into an aluminum oxide strip waveguide with a large mode field area in a straight waveguide area, so that mode field overlapping of 980nm pump light and 1550nm pump light is improved, and amplification of the large mode field area is realized. According to the invention, large-mode-area on-chip optical waveguide amplification of 980nm pump light pumping is realized, and the large-mode-area on-chip optical waveguide amplification device has a wide application prospect in the field of integrated photoelectronics and the field of optical communication.

A device for optical matrix-vector multiplication is provided. A x → = y → , encompassing: n * m optically coupled cells (i,j) (330, 331-399) representing the elements of an (n×m) matrix A, an input vector x → , whose components x i (221,222,223) are represented by n waveguides which are coupled to the rows of matrix A, forming an output vector y → whose components y j (231,232,233) are represented by m waveguides coupled to the columns of matrix A, wherein each cell (i,j) (330, 331-399) comprises an optical amplifier (400) configured to apply a weighting factor a ij to implement ∈[1;∞[.

The application discloses a concentration gradient design method of a laser amplifier gain medium and the laser amplifier gain medium, and relates to the technical field of laser amplification, and aims to solve the heat effect problem that heat distribution is uneven due to uneven pump light absorption distribution of the laser amplifier gain medium. Technical points of the application include: according to the heat conduction equation, the phase difference of each section of the crystal corresponding to the seed light passing through the pump light region when the laser amplifier amplifies the seed light is calculated and obtained; according to the phase difference of each section of the crystal through which the seed light passes being equal, the phase difference of each section of the crystal corresponding to the seed light passing through the pump light region is set to be equal; the absorption coefficient of each section of the crystal is obtained by iterative solution using simulation software; and the concentration gradient of each section of the crystal is calculated and obtained according to the relationship between the absorption coefficient and the concentration gradient. According to the application, the concentration distribution of the laser amplifier crystal is designed according to the depolarization generated by the seed light passing through the amplification laser medium, so that the purpose of reducing the thermal depolarization effect from the root is achieved.

This optical amplifier comprises: a rare-earth-doped optical fiber; an excitation light coupler that inputs signal light and excitation light to the rare-earth-doped optical fiber; a multimode excitation light source that outputs the excitation light to a multimode fiber; and a spatial multiplexing optical fiber that is connected to the multimode fiber, that introduces the excitation light into the excitation light coupler, and that has two or more spatial channels.

The optical amplifier comprises an amplification chamber, a first pump, a first heat exchanger, a second pump, and a novel catalyst module. The amplification chamber is configured to receive a laser beam and output an amplified laser beam. The first pump is configured to pump a gain medium into the gain medium system. The second pump is configured to pump a cooling fluid into the first heat exchanger. The first heat exchanger is positioned to transfer heat from the gain medium to the cooling fluid after the gain medium has passed through the amplification chamber. The novel catalyst module comprises a body and a catalyst disposed within the body. The body constitutes part of the gain medium system and is located downstream of the amplification chamber and upstream of the first heat exchanger. During use, the gain medium is adjacent to or in contact with the catalyst.

A semiconductor optical amplifier having a III-V semiconductor structure above a silicon structure. The III-V semiconductor structure forms a p-i-n junction with a first portion having a first width and a second portion having a wider second width. The silicon structure includes a silicon waveguide optically coupled to the III-V semiconductor structure and having a central silicon rib extending between two wide trenches. The central silicon rib includes a first tapered portion located under the first portion of the III-V semiconductor structure, the first tapered portion decreasing in width as the first tapered portion extends in a longitudinal direction, and a second tapered portion located under the second portion of the III-V semiconductor structure, the second tapered portion increasing in width as the second tapered portion extends in the longitudinal direction.

A laser system for the generation of ultrashort optical pulses of light including an oscillator emitting low power and negatively chirped optical pulses with a spectral bandwidth W1, a dispersive connecting segment to maintain the sign of the chirp of the pulses of the oscillator, an optical amplifier for amplifying the optical light pulses and a negative group velocity dispersion segment for compensating phase contributions of the whole propagation process. During the propagation from the output of the oscillator to the end of the optical amplifier, the chirp of the light pulses will change once from negative to positive chirp. After a final compression stage ultrashort optical pulses can be generated.

The application discloses an optical connector assembly, which comprises a first transmission assembly, a second transmission assembly and an optical amplifier device. The first transmission assembly comprises a first optical cable unit, a first connecting module arranged at one end of the first optical cable unit and used for connecting with an optical / electrical integrated circuit, and a second connecting module arranged at the other end of the first optical cable unit. The second transmission assembly comprises a second optical cable unit, a third connecting module arranged at one end of the second optical cable unit, and a cable end connector arranged at the other end of the second optical cable unit and used for connecting with an application device. The optical amplifier device comprises a first end part optically aligned with the first optical cable unit and a second end part optically aligned with the second optical cable unit, so that the optical signal transmission quality is improved.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

An amplified laser device is provided with one or more Micro-Electro-Mechanical System (MEMS) Micro-Mirror Arrays (MMAs) having tip, tilt and piston capability positioned on either side of the optical amplifier to correct the profile of the beam to improve the gain performance of the optical amplifier or to compensate for atmospheric distortion while steering the amplified beam over a FOR. The MEMS MMAs may be positioned in front of, behind or on both sides of the amplifier. The MEMS MMAs can be configured to optimize the combined amplifier performance, static and time varying, and compensation for atmospheric distortion together or separately.

Suppressing Stimulated Brillouin Scattering (SBS) in an Optical Amplifier system comprising: an optical fan out which splits a coherent optical beam into a set of multiple optical beams, a set of opti

A light source apparatus (200) includes a gas discharge stage (210) and a metal fluoride trap (300). The gas discharge stage includes an optical amplifier (206) and a set of optical elements (250, 260). The optical amplifier includes a chamber (211) configured to hold a gas discharge medium (213), the gas discharge medium outputting a light beam. The set of optical elements is configured to form an optical resonator around the optical amplifier. The metal fluoride trap is configured to trap metal fluoride dust generated from the gas discharge stage. The metal fluoride trap includes an electrostatic precipitator (320) and a packed-bed filter (400, 402, 404) disposed around the electrostatic precipitator. The packed-bed filter includes a plurality of beads configured (406, 408) to absorb metal fluoride dust (208).

The invention relates to a method for stripping a single-crystal optical fiber from the surface of a rare earth element doped single-crystal material, which adopts an ion beam technology to successfully and directly strip a crystal optical fiber structure from the surface of a rare earth element doped garnet crystal to obtain the single-crystal optical fiber. The length can exceed 1cm, and the device has the capability of guiding optical signal propagation; the physical properties of the crystal material are consistent with those of the crystal material. By means of the optical gain characteristic of the rare earth element doped single crystal material, the single crystal optical fiber can serve as an optical waveguide optical amplifier with excellent performance.

This invention discloses a photoelectric hybrid integrated module for a semiconductor optical amplifier, relating to the field of electronic device packaging technology. It includes a housing and a substrate fixedly connected to the opening side of the housing to form a closed module cavity. A central mounting base is fixedly connected to the center of the substrate near the cavity, forming a positional reference for fixed spatial coordinates. This invention sets the central mounting base, which carries the heat source, as an absolute physical spatial reference. Using positioning components on the substrate, two mounting bases are forced into spatial alignment with this reference. Through rigid contact between the physical surfaces, the degrees of freedom of the two mounting bases in the lateral and vertical directions are locked, ensuring that the topological coordinates of the coupling components on both sides relative to the central reference are determined by the defined processing geometry, thus eliminating the uncertain deformation stress introduced by the process itself.

The application discloses a Fourier domain mode locked laser based on a laser dynamic establishment process and a control method, and comprises a ring laser cavity which is composed of an optical amplifier, a first isolator, a second isolator, an adjustable filter, a delay optical fiber, a coupler and a polarization controller or an optical amplifier, a first isolator, a second isolator, an adjustable filter, a delay optical fiber, a coupler, an intensity modulator and a polarization controller. When the dispersion amount in the ring laser cavity exceeds the bandwidth range of the adjustable filter, the optical amplifier or the intensity modulator is controlled to restart, so that the laser signal is restarted instead of the signal in the continuous gain cavity, the residual dispersion in the cavity is resisted, high coherent swept laser output is realized, any dispersion compensation technology is not needed, the scheme is simple, the requirements of the devices used for the laser are low, environment control technology is not needed, the scheme has strong robustness, the cost is reduced, and the Fourier domain mode locked laser can be applied to any waveband.

The invention relates to a laser amplifier assembly, a laser system and a lithographic apparatus. The laser amplifier assembly includes: first and second optical mirrors configured to transmit one of signal light and pump light and reflect the other of the signal light and the pump light, a wavelength of the pump light being different from a wavelength of the signal light; the laser amplification cavity is arranged between the first optical lens and the second optical lens, the laser amplification cavity comprises a laser gain medium doped with at least one doping agent, and the signal light is transmitted to the laser amplification cavity through one of the first optical lens and the second optical lens and penetrates through the laser gain medium; the pump light is transmitted to the laser amplification cavity via at least one of the first optical mirror and the second optical mirror and passes through the laser gain medium to interact with the laser gain medium to amplify the signal light, and one of the first optical mirror and the second optical mirror is configured to output the amplified signal light.

Systems and methods for quantum key distribution in an optical network and quantum-secured optical channels. A node (A, 200) for operation in an optical network includes one or more degrees each connected to a corresponding optical span including one or more fibers; and one or more Quantum-Optical Service modules (QOSM) for each of the one or more degrees, each QOSM supporting Quantum Key Distribution (QKD) for establishing a quantum-secured channel (20) and Optical Service Channel (OSO) functionality over the quantum-secured channel (20). A line amplifier system € for operation in an optical network includes one or more optical amplifiers configured to amplify optical channels over an optical span in the optical network; and a trusted quantum repeater (100), connected to the optical span, and configured to support QKD for establishing a first quantum-secured channel and a second quantum-secured channel and OSC functionality over the first quantum-secured channel and the second quantum-secured channel.

This invention discloses a broadband two-dimensional scanning photonic terahertz high-speed communication device, comprising a photonic terahertz broadband signal transmitter, a terahertz Riesling prism antenna, and a terahertz Cramer-Kroni receiver. The photonic terahertz broadband signal transmitter includes a digital-to-analog converter (DAC), a first laser, an optoelectronic modulator, a first polarization-maintaining tunable optical attenuator, a polarization-maintaining optical amplifier, an optical coupler, a second laser, a second polarization-maintaining tunable optical attenuator, a photodetector, and a power amplifier. The terahertz Riesling prism antenna includes a horn antenna, a phase-calibrated linear gradient phase-shifting surface, and a linear gradient phase-shifting surface. The terahertz Cramer-Kroni receiver includes, in sequence, an attenuator, a low-noise amplifier, an intensity detector, an ADC sampling unit, a Cramer-Kroni processing unit, and a DSP processing unit. This invention has the advantages of flexible and adjustable beam, large bandwidth, simple system structure, and easy extension to higher frequencies.