The invention discloses a fin type three-color integrated Micro-
LED display device and a preparation method of the fin type three-color integrated Micro-
LED display device. The
display device relates to the field of optical semiconductors, and comprises a driving substrate, the surface of the driving substrate is provided with a plurality of groove areas, and the plurality of groove areas are arranged in an array; an LED bar unit is embedded in each groove area, and the LED bar units can be driven independently; the LED bar unit comprises a plurality of LED units and a plurality of
electrode layers, the LED units and the
electrode layers are arranged in a penetrating manner and are fixed in the groove area of the driving substrate in a fin shape, and the two
electrode layers respectively form two outermost layers of the LED bar unit; according to the method, after
wafer vertical bonding and deep groove
etching, rotation
mass transfer is carried out; the etched LED bar units are rotationally and horizontally placed in the grooves of the driving substrate, each LED bar unit comprises the light-emitting areas and the
metal areas, the light-emitting areas are horizontally arranged in a fin shape, the light-emitting area is small, then nanoscale light emitting can be achieved, and no light
crosstalk phenomenon exists in the vertical direction; the
metal area can block and reflect light of the light-emitting area, light
crosstalk in the horizontal direction is avoided, meanwhile, the brightness of the light-emitting area is improved, and therefore the light-emitting efficiency and the display saturation of the LED pixel bar unit are improved.