1268results about How to "Achieve electrical connection" patented technology

Disclosed is a wafer-level fingerprint recognition chip packaging structure and method. The method includes: providing a substrate which comprises a plurality of induction chip areas and is provided with a first surface and a second surface opposite to the first surface, wherein a first surface of each induction chip area comprises an induction area; forming a covering layer on the first surface of the substrate; forming a plug structure in each induction chip area of the substrate, wherein one end of each plug structure is electrically connected with the corresponding induction area, and the other end of each plug structure is exposed out of the second surface of the substrate. By the forming method, the packaging process of a fingerprint recognition chip can be simplified, the requirement on sensitivity of the induction chip is lowered, and the packaging method is wider in application.

The invention provides a fingerprint identification chip packaging structure and a packaging method. The packaging method comprises the steps that a substrate is provided; an induction chip is coupled at the surface of the substrate, the induction chip is provided with a first surface and a second surface which is opposite to the first surface, the second surface of the induction chip is arranged at the surface of the substrate, the first surface of the induction chip comprises induction areas and peripheral areas surrounding the induction areas, grooves are formed in the peripheral areas, the surfaces of the side walls and the bottom parts of the grooves and the surface of the peripheral areas are provided with re-wiring layers, and the side walls of the induction chip are exposed out of the grooves; and a plastic packaging layer is formed at the surface of the substrate, the plastic packaging layer surrounds the induction chip, the plastic packaging layer fills the grooves, and the plastic packaging layer is exposed out of the surface of the induction areas. Sensitivity of the induction chip in the packaging structure is enhanced, and the size of the packaging structure is reduced.

The invention relates to an integrally-packaged power semiconductor device. A top source electrode of an inverted low-end MOSFET (Metal-Oxide-Semiconducotr Field Effect Transistor) chip is electrically connected to the top surface of a chip base; a bottom drain electrode of a high-end MOSFET chip or a top source electrode of the inverted high-end MOSFET is electrically connected with a bottom drain electrode of the low-end MOSFET chip through a first metal connecting plate; a second metal connecting plate is stacked on the high-end MOSFET chip; and the chip base is also provided with a control chip and is electrically connected with the electrodes of the high-end MOSFET chip and the low-end MOSFET chip. According to the invention, a plurality of chips are stereoscopically packaged so as to reduce the whole size of the semiconductor device; in addition, the product performance of the semiconductor device is improved by largening the size of each chip in a packaging body which has the same size as that of the chip; and because the top source electrode of the low-end MOSFET chip and the top surface of the chip base are connected, the bottom surface of the packaged and exposed chip base is connected with a ground electrode, and the shape of the exposed bottom surface is simplified, and the area of the exposed bottom surface is maximized so as to facilitate heat dissipation.

The invention provides an electronic device capable of supporting multiple cards. The electronic device comprises two circuit boards, a card seat, a card cover and a card support; the card seat comprises a first SIM (subscriber identity module) card seat and a TF (Micro SD) card seat which are arranged on a first circuit board side by side, and a second SIM card seat arranged on a second circuit board; the second circuit board and the second SIM card seat on the second circuit board are integrally mounted on the inner lateral surface of the card cover; the card support is provided with a first side for supporting a first electronic card and a second side which is backed to the first side and is used for supporting a second electronic card; the first electronic card is selectively an SIM card or a TF card and is correspondingly and electrically connected with the first SIM card seat or the TF card seat; the second electronic card is electrically connected with the second SIM card seat; the second circuit board is provided with an external part extending out of the card cover; a first connector is arranged on the external part; a second connector is arranged on the first circuit board; the first connector is electrically connected with the second connector. Both front and reverse sides of one card support can be used for placing the electronic cards, and thus, design of placing various different electronic cards on double layers is implemented.

The invention discloses a silicon photonic optical transceiver module. The silicon photonic optical transceiver module comprises a circuit board and an optical component; the circuit board is arrangedin a hollow region, and the hollow region is used for accommodating the optical component; the circuit board is provided with a plurality of first bonding pads along the periphery of the hollow region; a plurality of second bonding pads are arranged at the edge of the optical component; and after the optical component and the circuit board are attached in a reverse mounting mode, the second bonding pads are attached to the corresponding first bonding pads so as to implement electrical connection. The electrical connection is established between the circuit board and the optical component by the first bonding pads and the second bonding pads, an electric signal connection path is short, a stray capacitance is small, high-frequency transmission loss is low, high-frequency characteristics are improved, and the problem of high-frequency inhibition caused by a gold-wire bonding wire currently can be effectively improved. Meanwhile, the optical component and the circuit board are attached in a reverse buckling mode, the design structure is compact, and the size of the silicon photonic optical transceiver module can be effectively reduced.

The invention discloses a binding method of a display device and a display substrate, and belongs to the field of display technology. The display device includes a display substrate, a binding structure and a circuit board, wherein the binding structure is arranged on the display substrate, is made of a conductive tape, and has a certain stickiness; and the binding structure can be directly bondedto the first conductive structure of the circuit board. The electrical connection between the binding structure and the first conductive structure can be realized without using ACF to bond the binding structure to the first conductive structure; the process of binding the display substrate is effectively simplified; and the cost is lowered.

The invention discloses a three-dimensional storage and a formation method therefor. The three-dimensional storage comprises a substrate, a plurality of separated stacking layer structures, an isolation layer, a connecting structure and a plurality of inserting plugs, wherein the substrate comprises a device region and a connecting region which are arranged adjacently; the multiple separated stacking layer structures are positioned on the device region and the connecting region of the substrate; the stacking layer structures comprise multiple layers of stacked grids; the isolation layer is positioned on the device region, between adjacent stacking structures, of the substrate; the connecting structure is positioned on the connecting region of the substrate; the connecting structure is connected with the adjacent stacking structures; the connecting structure comprises multiple layers of stacked electric connecting layers; the two ends of each electric connecting layer are connected with the grids on the same layer in the adjacent stacking structures; the multiple inserting plugs are positioned on the surfaces of the grids in each layer; and each inserting plug is electrically connected with the grids in contact, the grids on the same layer with the grids in contact, and the electric connecting layers on the same layer with the grids in contact. By virtue of the formation method, the number of the inserting plugs can be reduced, the process can be simplified, the size of the storage can be reduced, and the space utilization rate of the chip can be improved.

The invention relates to an MEMS (Micro Electro Mechanical Systems) pressure sensor and a formation method thereof. The formation method comprises the following steps of providing a first substrate comprising a first surface and a second surface which are opposite, wherein the first substrate comprises at least one conducting layer, and the conducting layer is located on one side of the first surface of the first substrate; providing a second substrate comprising a third surface and a fourth surface which are opposite, wherein the second substrate comprises a second base, a piezoresistive element and a pressure sensing area, and the piezoresistive element is located in the pressure sensing area and on one side of the third surface of the second substrate; mutually fixing the first surface of the first substrate and the third surface of the second substrate; forming a cavity between the first substrate and the pressure sensing area of the second substrate; removing the second base, and forming a fifth surface opposite to the third surface of the second substrate; forming a first conductive plug penetrating to the surface of the at least one conducting layer from one side of the fifth surface of the second substrate. The performance and the reliability of the MEMS pressure sensor are improved, and the size is reduced, and the processing cost is reduced.

The invention provides a display panel, an array substrate and a dark attunement method thereof. The dark attunement method comprises the steps that when a pixel electrode anomaly exists, a pixel electrode and a data line are disconnected; a drain electrode of a thin film transistor and an overlap area of a shading electrode are fused; the shading electrode is directly loaded to the pixel electrode. Accordingly, dark attunement is achieved conveniently.

The invention discloses an MEMS (micro-electro mechanical system) pressure sensor and a forming method thereof. The forming method comprises steps as follows: a first substrate comprising a first surface and a second surface is provided and comprises at least one conductive layer which is located on one side of the first surface of the first substrate; a second substrate comprising a third surface and a fourth surface is provided and comprises a second base, a pressure-sensitive electrode and a pressure sensing area, and the pressure-sensitive electrode is located in the pressure sensing area and is located on one side of the third surface of the second substrate; the first surface of the first substrate is fixed with the third surface of the second substrate, and a hollow cavity is formed between the first substrate and the pressure sensing area of the second substrate; the second base is removed, and a fifth surface opposite to the third surface of the second substrate is formed; a first conductive plug penetrating to the at least one conductive layer is formed on one side of the fifth surface of the second substrate, so that the at least one conductive layer and the pressure-sensitive electrode are electrically connected. According to the MEMS pressure sensor and the forming method thereof, the performance and the reliability of the MEMS pressure sensor are improved, the size is reduced, and the processing cost is reduced.

The invention discloses a solar cell welding machine. The solar cell welding machine comprises a machine base, a conveying assembly, a first welding strip feeding device, a second welding strip feeding device, a cell feeding and discharging device, an interconnection welding device and a confluence welding device; the machine base is provided with a cell paving station, a waiting station, an interconnection welding station and a confluence welding station; the conveying assembly conveys a plurality of solar cells to the interconnection welding station via the cell paving station successively;the first welding strip feeding device conveys a first welding strip to the cell paving station; the second welding strip feeding device conveys a plurality of second welding strips to the waiting station and the cell paving station; the cell feeding and discharging device conveys solar cells to the cell paving station; the interconnection welding device welds and forms a plurality of interconnected solar cell strings; and the confluence welding device welds and forms a cell interconnection plate. Simultaneous welding of the multiple solar cell strings and automatic welding of the solar cell interconnection plate are achieved, the production efficiency is improved, and the conversion efficiency of a photovoltaic module is improved.

A camera module comprises a substrate, an image sensing chip and a plurality of conductive leads, wherein the substrate comprises a first PCB (printed circuit board), a double-sided FPC (flexible printed circuit board) and a second PCB which are laminated sequentially to form a circuit board with a multi-layer structure, and sufficient wiring space is guaranteed accordingly; a plurality of first welding pads are arranged on an exposed upper surface of the double-sided FPCB; a plurality of second welding pads are arranged on the upper surface of the image sensing chip; one end of each conductive lead is connected with one first welding pad, and the other end is connected with one corresponding second welding pad, so that the image sensing chip is electrically connected with the substrate; further, a first through hole is formed in the first PCB, and the image sensing chip is arranged in the through hole. Therefore, the total height after the image sensing chip is assembled with the substrate is smaller than the height sum of the image sensing chip and the flexible substrate, the height of the camera module can be reduced effectively, and the development requirement for light, thin, short and small tendency day by day can be met.

The invention discloses a liquid-cooled cable connecting assembly and a connector. The liquid-cooled cable connecting assembly comprises liquid-cooled cable connectors. Each liquid-cooled cable connector comprises a cable tail terminal, a pin terminal and a cable, wherein the cable tail terminal is provided with a first accommodating cavity with one end opened and a first liquid flowing channel communicated with the first accommodating cavity; the pin terminal is provided with a second accommodating cavity with one end opened and a second liquid flowing channel communicated with the second accommodating cavity; the cable comprises an insulating pipe and a conductor located inside the insulating pipe, two ends of the insulating pipe are respectively in sealed connection with the opened endsof the first accommodating cavity and the second accommodating cavity, two ends of the conductor extend to be inserted in the first accommodating cavity and the second accommodating cavity and are contacted with the cable tail terminal and the pin terminal respectively, and liquid flowing gaps are formed among the conductor and the first accommodating cavity, the second accommodating cavity and the inner wall of the insulating pipe. The liquid-cooled cable connecting assembly is simple in structure and convenient in operation, conduction of a coolant can be realized while electric connectionis ensured, and temperature rise of a contact piece at a heat source place can thus be controlled.

The invention provides a semiconductor structure and a formation method thereof. The semiconductor structure comprises a substrate; a first gate structure which is arranged on the surface of the substrate of the first regional part, wherein the first gate structure comprises a first work function layer; a second gate structure which is arranged on the surface of the substrate of the second regional part, wherein the second gate structure comprises a second work function layer, and the work function type of the second work function layer is different from the work function type of the first work function layer; an insulating layer which is arranged on the surface of the substrate of the third regional part, wherein the insulating layer covers the surface of the side wall of the first gate structure and the surface of the side wall of the second gate structure; an upper dielectric layer which is arranged on the top surface of the first gate structure, the top surface of the second gate structure and the top surface of the insulating layer; an opening which is arranged in the upper dielectric layer, wherein the top part of a first metal gate, the top part of a second metal gate and the top part of the insulating layer are exposed out of the bottom part of the opening; and a conductive layer which fully fills the opening, wherein the conductive layer is electrically connected with the first metal gate and the second metal gate. The electrical performance of the semiconductor structure can be improved by the semiconductor structure and the formation method thereof.

The invention discloses a battery component of a new-energy electric automobile. The battery component is detachably installed at the lower end of an automobile body of the electric automobile; a battery installing groove for containing the battery component is formed in the lower end of the automobile body, and a positioning baffle is installed in the battery installing groove along the left sideof the automobile body in the length direction, and makes the battery component aligned with the battery installing groove when the battery component is installed in the battery installing groove. Byarranging a movable trolley at the lower end of the battery component, the battery component can move under remote control when separating from the automobile body; in addition, vertically-arranged electric pushing rods are installed on the two sides of the battery component, and in this way, when the battery component is installed on the automobile body, the battery component can be lifted intothe battery installing groove in the bottom of the automobile body only by moving the battery component to the position under the battery installing groove via the movable trolley and then controllingthe electric pushing rods to lengthen.

The invention discloses a quickly mounted ceiling lamp which comprises a lamp body, an upper cover, a lower cover and spiral buckle structures, wherein the lamp body is fixed on the lower cover; the spiral buckle structures are respectively arranged on the upper cover and the lower cover; the upper cover and the lower cover can be buckled or separated through the spiral buckle structures; the quickly mounted ceiling lamp is characterized in that an electricity lead-in base is also arranged in the center of the lower cover; two electrode joints are arranged in the electricity lead-in base; an upper electricity lead-in seat corresponding to the electricity lead-in base is arranged on the upper cover; two electrode contacts are arranged in the upper electricity lead-in seat; during assembling, the upper electricity lead-in seat is plugged into the electricity lead-in base in a rotatable manner; in a spirally buckling process of the spiral buckle structures, the two electrode contacts are always electrically connected with the two electrode joints. When the quickly mounted ceiling lamp is mounted, electric connection and mounting can be realized without detaching a lampshade; the quickly mounted ceiling lamp has the advantage of being stable and convenient in mounting.