MEMS (Micro Electro Mechanical Systems) pressure sensor and formation method thereof
A pressure sensor and pressure technology, applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., can solve the problems of difficult yield of integrated circuits, large device size, and reduced pressure sensor performance.
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Embodiment 1
[0092] Figure 1 to Figure 9 It is a schematic cross-sectional structure diagram of the forming process of the MEMS pressure sensor according to an embodiment of the present invention.
[0093] Please refer to figure 1 , providing a first substrate 100, the first substrate 100 includes an opposite first surface 101 and a second surface 102, the first substrate 100 includes at least one conductive layer 103, and the conductive layer 103 is located at the The side of the first surface 101 of the first substrate 100 described above.
[0094] The first substrate 100 is used to form a conductive layer 103, and the conductive layer 103 is used to transmit the electrical signal output by the piezoresistive element on the second substrate. In this embodiment, the first substrate 100 further includes a circuit, and the conductive layer 103 may be a part of the conductive layer of the circuit, or may be an additional conductive layer on the circuit. The conductive layer 103 may inclu...
Embodiment 2
[0172] Figure 10 to Figure 11 It is a schematic cross-sectional structure diagram of the forming process of the MEMS pressure sensor according to another embodiment of the present invention.
[0173] Please refer to Figure 10 , providing a first substrate 200, the first substrate 200 includes an opposite first surface 201 and a second surface 202, the first substrate 200 includes at least one conductive layer 203, and the conductive layer 203 is located at the On the side of the first surface 201 of the first substrate 200 , the first substrate 200 further includes a self-test electrode 230 .
[0174] In addition, the first substrate 200 also includes a circuit, and the circuit includes a semiconductor device structure and an electrical interconnection structure. The conductive layer 203 may be a part of the conductive layer of the circuit, or an additional conductive layer on the circuit. . The conductive layer may include a conductor or a semiconductor.
[0175] In thi...
Embodiment 3
[0188] Figure 12 to Figure 15 It is a schematic cross-sectional structure diagram of the forming process of the MEMS pressure sensor according to another embodiment of the present invention.
[0189] Please refer to Figure 12 , providing a second substrate 314, the second substrate 314 includes an opposing third surface 318 and a fourth surface 319, the second substrate 314 includes a second base 310 and a pressure-sensitive pressure sensor on the second base 310 Resistive element 313, the second substrate 314 includes a pressure sensing area 380, the piezoresistive element 313 is located in the pressure sensing area 380, the piezoresistive element 313 is located in the second substrate 314 On the side of the third surface 318 , the second substrate 314 also includes a reference cell region 331 , and the piezoresistive element 313 is also located in the reference cell region 331 .
[0190] In this embodiment, the second substrate 314 further includes: a second bonding laye...
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