12results about How to "Simple forming process" patented technology

The invention discloses a transparent conductive electrode, a preparation method thereof and a semiconductor device applying the transparent conductive electrode, a metal wire layer is arranged on the surface of a transparent conductive layer or in at least part of the transparent conductive layer, and the metal wire layer comprises a plurality of metal wires, so that the surface resistance of the transparent conductive layer can be reduced, and the conductivity of the transparent conductive layer is improved. The conductivity of the whole formed by the transparent conducting layer and the metal wire layer is improved, and the transparency of the whole formed by the transparent conducting layer and the metal wire layer is kept to a great extent. Moreover, the transparent conductive layer is arranged to expose at least part of the metal wire layer, so that the transparent conductive layer is flat and not easy to break, particularly, the protective layer is arranged on the surface of the metal wire layer exposed on the transparent conductive layer, and the protective layer is made of metal oxide in the metal wire layer. The whole body formed by the transparent conductive layer and the metal wire layer also keeps good chemical / electrochemical inertness, and the stability of the transparent conductive electrode is improved.

The utility model discloses a flexible optical fiber cable, which comprises a strip-shaped flexible shaft core and at least one wire rod, a wire rod positioning part is arranged outside the shaft core, at least one spiral groove is formed in the wire rod positioning part, and the wire rod is arranged in the spiral groove to form a spiral shape; the wire includes an optical fiber. According to the utility model, the wire rod at least comprising the optical fiber is accommodated in the spiral groove, the optical fiber can be protected by using the spiral groove, and the optical fiber is prevented from being abrupt outside the flexible wire body, so that the lateral pressure resistance and the axial friction resistance of the optical fiber are greatly improved, and the optical fiber is not easy to break in the use process.

A semiconductor structure and a method for forming the same, wherein the method comprises: providing a substrate, the substrate comprising a first conductive structure and a device structure, the substrate further comprising a first dielectric layer, a second dielectric layer, and an etch stop layer, wherein the second dielectric layer has a resistor layer; forming a first opening and a second opening in the second dielectric layer, wherein the bottom of the first opening exposes the etch stop layer on the first conductive structure, and the bottom of the second opening exposes the resistor layer; using a selective film forming process, forming an intermediate conductive film on the surface of the exposed resistor layer; after forming the intermediate conductive film, etching the exposed etch stop layer until the surface of the first conductive structure is exposed; after etching the exposed etch stop layer, forming a second conductive structure in the first opening; and after etching the exposed etch stop layer, forming a third conductive structure in the second opening. Thus, the semiconductor structure can have better performance and reliability while reducing the difficulty of the semiconductor structure manufacturing process.

The semiconductor structure provided by the present disclosure comprises: a substrate; a stack structure on the substrate, the stack structure comprising a plurality of first semiconductor layers arranged in a direction perpendicular to a top surface of the substrate, each of the first semiconductor layers comprising a plurality of channel regions arranged in a first direction and first and second doped regions distributed on opposite sides of each of the channel regions in a second direction; the first and second directions are both parallel to the top surface of the substrate, and the first direction intersects the second direction; and a word line structure comprising a plurality of word lines extending in the first direction, edges of the word lines being flush with edges of the channel regions in the second direction. The horizontal word line structure formed by the present disclosure can be applied to semiconductor structures with continuously shrinking dimensions, can improve the performance of the semiconductor structure, and can simplify the manufacturing process.

The invention relates to a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps: providing a substrate; forming a stacked layer on the top surface of the substrate, wherein the stacked layer comprises a conductive layer and an active layer located above the conductive layer; the stacking layer is etched, a plurality of first grooves which penetrate through the stacking layer in the first direction and are arranged at intervals in the second direction are formed, and the first grooves divide the conductive layer into a plurality of first conductive wires; the active layer is etched, a plurality of second grooves which penetrate through the stacking layer in the first direction and are arranged at intervals in the third direction are formed, and the active layer is separated into a plurality of active columns which are arranged at intervals through the first grooves and the second grooves. The difficulty of the semiconductor structure manufacturing process is reduced, and the performance of the semiconductor structure is improved.

The invention belongs to the technical field of material forming, and discloses a reinforced thin-wall carbon fiber shell hot-press forming method which comprises the following steps: laying carbon fiber prepreg in a mold from inside to outside, firstly laying ribs, and then laying skin to form a prepreg blank; continuously and sequentially laying a carbon fiber pad with demolding cloth, a silicon rubber pad, an isolating membrane, a breathable felt and a vacuum bag membrane on the surface of the mold, integrally sealing by using a sealing rubber strip, vacuumizing and compacting, and curing in an autoclave; and after curing is finished, cooling, opening the tank, taking out, demolding after cooling to room temperature, and removing the mold and auxiliary materials to obtain the reinforced thin-wall carbon fiber shell. According to the invention, the silicon rubber pad is added on the carbon fiber pad, so that the carbon fiber participating in hot pressing is thickened, and the external soft silicon rubber pad is used as the substrate, so that the pressure transmission of the reinforced structure to the non-reinforced side surface is fundamentally counteracted, and the convex mark defect is thoroughly eliminated. The method is suitable for manufacturing the reinforced thin-wall carbon fiber shell in the aerospace industry.

The invention provides a preparation method of a leadless golden finger carrier plate. The preparation method comprises the following steps: providing a carrier plate comprising a first copper layer; the thickness of the first copper layer is less than or equal to 3 microns; a first layer of dry film is pasted on the first copper layer, a pattern area is formed through exposure and development, the pattern area comprises a circuit pattern area and a golden finger area, and the bottom of the pattern area abuts against the first copper layer; performing copper electroplating on the pattern area; pasting a second layer of dry film on the pattern area after copper electroplating and the first layer of dry film, and exposing and developing to expose the golden finger area; plating nickel and gold on the exposed gold finger area to form a lead-free gold finger; and removing the first layer of dry film and the second layer of dry film, and removing the first copper layer exposed after film stripping to obtain a circuit pattern and a golden finger on the surface of the carrier plate. The circuit pattern and the golden finger can be directly electroplated and formed without further etching, so that the preparation efficiency of the carrier plate is improved, and the application range of the carrier plate is expanded.

The present invention discloses a mirror-position SONOS flash memory unit, comprising an enhanced selection tube and a depletion storage tube, wherein the selection tube and the storage tube share a source region and a drain region heavily doped with a first conductive type, and a buried channel layer lightly doped with a first conductive type is formed between the source and drain regions. The channel region is formed by a combination of a well region and a buried channel layer between the source region and the drain region; a first gate structure of the selection tube and a second gate structure of the storage tube are arranged on the channel region. A first groove that cuts off the buried channel layer is formed in the formation region of the first gate structure, so that the bottom surface of the first gate dielectric layer directly contacts the well region, and the bottom surface of the second gate storage dielectric layer directly contacts the buried channel layer, thereby realizing separate adjustment of the threshold voltage of the selection tube and the storage tube. The present invention also discloses a method for manufacturing a mirror-position SONOS flash memory unit. The present invention can simplify the formation process of the channel region of the selection tube and the storage tube, which is conducive to reducing the channel length of the entire selection tube, the storage tube and the entire unit.

The embodiment of the invention provides a semiconductor structure, a manufacturing method thereof and electronic equipment, which are used for solving the technical problem of how to simplify a forming process of a bit line structure. The manufacturing method comprises the steps that a substrate is provided, the substrate comprises a plurality of semiconductor patterns arranged in the first direction, each semiconductor pattern comprises a first part extending in the second direction and a plurality of second parts arranged at intervals in the second direction and connected with the first part, and a groove is formed between every two adjacent first parts; forming a doped dielectric layer covering the groove and the first part; executing a first annealing process on the substrate on which the doped dielectric layer is formed, so that doped ions in the doped dielectric layer are diffused into the first part and the second part to respectively form a doped first part and a doped second part; removing the doped dielectric layer to expose the doped first part; based on the doped first portion, a bit line structure is formed, the bit line structure connecting the doped second portion. Therefore, the forming process of the bit line structure is simplified.

The invention discloses an electric drive product packaging structure and a forming method thereof. The electric drive product packaging structure comprises a base island and a plurality of discrete pins located around the base island. The power chip is mounted on the base island, and the power chip is electrically connected with the pin; the plurality of discrete first vertical bonding wires are positioned on the power chip and are electrically connected with the power chip; the plurality of discrete second vertical bonding wires are positioned on the corresponding pins and are electrically connected with the corresponding pins; the first plastic packaging layer wraps the power chip, the first vertical bonding wire and the second vertical bonding wire, and the top ends of the first vertical bonding wire and the second vertical bonding wire are exposed out of the first plastic packaging layer; the control chip is mounted on the first plastic package layer and is electrically connected with the corresponding first vertical bonding wire and the second vertical bonding wire, and the sensor chip is mounted on the first plastic package layer right above the power chip and is electrically connected with the corresponding second vertical bonding wire. The size of a packaging structure of an electric drive product is reduced, and the integration level is improved.

The present invention discloses a method for manufacturing a trench gate, comprising: step 1, forming a trench on the surface of a semiconductor substrate. Step 2, forming a first oxide layer, after the first oxide layer is formed, the top of the trench needs to be kept in an open state and surround a second trench in the trench. Step 3, depositing a second dielectric layer, after the second dielectric layer is formed, the top opening of the trench needs to be kept or closed. Step 4, performing a first chemical mechanical polishing process to remove the second dielectric layer outside the second trench, and the retained second dielectric layer covers the side and bottom surfaces of the second trench. Step 5, using the retained second dielectric layer as a mask, performing a second etching from top to bottom on the first oxide layer to form a gate bottom oxide layer. Step 6, removing the second dielectric layer. Step 7, growing a gate oxide layer. The present invention can simplify the formation process of BTO, thereby reducing the process cost.

The invention belongs to the technical field of batteries, and provides a liquid cooling part and a preparation method thereof, a liquid cooling assembly, a liquid cooling system, a battery and an electric device. The liquid cooling piece comprises a heat conduction piece with a cooling channel and an insulating layer wrapping the surface of the heat conduction piece, and the insulating layer comprises a modified PET material. The insulating layer in the liquid cooling piece has relatively high flame retardance and toughness, and can play an effective role in protecting the liquid cooling piece.