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4770results about How to "Simplify the manufacturing process" patented technology

Cast form water borne coating and technique for preparing the same

The invention relates to an auxiliary material for casting a mould, in particular to a casting mould water-based coating formulation for a sand mould or an expendable pattern casting (EPC), and a process for preparing the same. The casting mould water-based coating formulation consists of refractory powder, a suspending agent, a bonding agent, a surfactant, a defoaming agent, a corrosion remover and water. The process comprises the following steps: adding the suspending agent to the water directly, and mixing and dispersing the mixture in a high speed dispersion machine; adding auxiliary agents including the defoaming agent, the surfactant, the corrosion remover, and the like to the water, and mixing the auxiliary agents; adding the refractory powder to the mixture to be mixed; and adding the bonding agent to the mixture to be mixed, and then adding water to adjust the coating until the coating has the thickness in a using state to obtain the finished product. The coating prepared by the process has the effects that the coating ensures that a high-density low-viscosity coating has excellent suspension property and storage stability, a coating layer is not easy to crack after drying, the coating is advantageous to improve the capacity of the coating to resist high temperature metal corrosion, and the like.
Owner:深圳市景鼎现代科技有限公司

Semiconductive metal oxide thin film ferroelectric memory transistor

The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrication process and could realize 3D structure to increase circuit density. The disclosed semiconductive metal oxide transistor can have great potential in ferroelectric non volatile memory device with the further advantages of good interfacial properties with the ferroelectric materials, possible lattice matching with the ferroelectric layer, reducing or eliminating the oxygen diffusion problem to improve the reliability of the ferroelectric memory transistor. The semiconductive metal oxide film is preferably a metal oxide exhibiting semiconducting properties at the transistor operating conditions, for example, In2O3 or RuO2. The present invention ferroelectric transistor can be a metal-ferroelectric-semiconductive metal oxide FET having a gate stack of a top metal electrode disposed on a ferroelectric layer disposed on a semiconductive metal oxide channel on a substrate. Using additional layer of bottom electrode and gate dielectric, the present invention ferroelectric transistor can also be a metal-ferroelectric-metal (optional)-gate dielectric (optional)-semiconductive metal oxide FET.
Owner:SHARP KK
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