4084results about "Decorative surface effects" patented technology

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

The invention provides a flexible palladium film hydrogen sensor and a preparation method thereof, the flexible palladium film hydrogen sensor is sequentially provided with a flexible substrate, a hydrogen sensitive sensing layer and a contact connection layer from bottom to top, and the contact connection layer is connected with a resistance measurement unit; and the hydrogen-sensitive sensing layer is a palladium or palladium alloy film with a conical micro-nano structure. The palladium or palladium alloy thin film with the conical micro-nano structure provides a hydrogen sensor conical surface micro-nano structure with a high specific surface area for the flexible palladium thin film hydrogen sensor, and the process that hydrogen is adsorbed, dissolved and diffused into the palladium or palladium alloy thin film is accelerated, so that the response speed of the sensor is increased; according to the hydrogen sensor, the flexible substrate is adopted, so that the hydrogen sensor can be conveniently arranged in various narrow spaces, and the applicability of the hydrogen sensor in various scenes is improved.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention relates to a material that is at least partially transparent and that has structures introduced into its internal volume after material production, which modify the volume with respect to its optical properties compared to the unstructured volume. The material according to the invention is characterized by its formation as an at least partially transparent surface coating, wherein the structure comprises modification bubbles that are formed in at least one plane within the volume.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention discloses a wafer bonding method, which comprises the following steps of: 1, providing a first wafer and a second wafer, the surface of the first wafer being provided with a microstructure with a high aspect ratio; step 2, cleaning the first wafer and the second wafer; step 3, performing vacuum drying treatment on the first wafer and the second wafer, wherein the vacuum pressure is controlled to be 0.1-10 Torr in the vacuum drying treatment process; step 4, carrying out pre-bonding on the first wafer and the second wafer to form a bonding body; and step 5, carrying out annealing treatment on the bonding body. Aiming at the problem of residual water in the pre-cleaning process in the bonding process of the micro-structure wafer with a high aspect ratio, the wafer is placed in a controllable vacuum environment, phase change boiling of liquid water under the condition of no heat input is realized, and the problem of high-temperature heat damage caused by an existing heating and baking method is effectively avoided.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

The invention discloses a piezoresistive pressure sensor chip and a preparation method thereof, and belongs to the technical field of micro-electromechanical systems. The piezoresistive pressure sensor chip comprises a substrate, the back of the substrate is etched with a cavity, the center of the cavity is provided with a cross-shaped mass block, and four hollow islands and four peninsula are arranged along the linear direction of the cross-shaped mass block; a plurality of groups of piezoresistor strips are arranged on the front surface of the substrate, each group of piezoresistor strips comprises a first piezoresistor strip component arranged close to the center and a second piezoresistor strip component arranged close to the side wall of the cavity, and the first piezoresistor strip component forms an internal Wheatstone bridge through a first metal lead group; the second piezoresistor strip component forms an external Wheatstone bridge through a second metal lead group; the glass is arranged on the substrate back. The piezoresistive pressure sensor chip can measure the pressure of a micro-pressure section, can bear high overload equivalent to a plurality of times of the full scale, and has the advantages of high sensitivity, good linearity, high precision, good dynamic performance and the like.

The invention relates to an MEMS (Micro Electro Mechanical System) packaging method. The method comprises the following steps of S1, bonding a device layer wafer on a substrate; s2, etching the device layer wafer to obtain an acceleration sensor structure and a gyroscope structure; s3, in a nitrogen atmosphere, pre-bonding an upper cover plate on the acceleration sensor structure and the gyroscope structure, so that an acceleration sensor structure cavity and a gyroscope structure cavity between the upper cover plate and the substrate are filled with nitrogen; and S4, eliminating nitrogen in the cavity of the gyroscope structure, and bonding the acceleration sensor structure and the gyroscope structure on the upper cover plate to obtain the gyroscope structure vacuum chamber. The acceleration sensor chip and the gyroscope chip are prepared on one substrate through MEMS packaging, the preparation process is shortened, the manufacturing period and cost of the MEMS chips are reduced, combined packaging of the two chips is achieved through combined nesting of different types of MEMS packaging modes, and the packaging efficiency is improved. The packaging volume is reduced, and the space utilization rate and the integration capability are improved.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

The invention belongs to the technical field of micro-nano machining, and relates to a preparation method of a metal nano slot array, which comprises the following steps: preparing a metal electrode on a substrate and patterning to obtain a first electrode; depositing a sacrificial structure at the joint of the first electrode and the substrate and patterning to obtain a sacrificial layer; preparing another metal electrode on the substrate and patterning to obtain a second electrode, and enabling the second electrode to cover the sacrificial layer; removing an electrode overlapping top cap at the junction of the first electrode and the second electrode by adopting a chemical mechanical polishing method to enable the sacrificial layer to be in an exposed state; and processing the sacrificial layer by adopting a wet etching method, so that a nano gap is formed between the first electrode and the second electrode, and the metal nano gap array is obtained. The metal nano gap array can be prepared, the heterogeneous electrode can be prepared, the depth-to-width ratio is high, the cost is low, and large-area batch preparation can be achieved.

The invention relates to the technical field of semiconductor devices, in particular to an MEMS inertial sensor and a preparation method thereof, and the sensor comprises a first supporting substrate and a first wafer which are stacked; a first groove is formed in one side, close to the first wafer, of the first supporting substrate; the first wafer comprises a fixed electrode, the projection of the fixed electrode on the first supporting substrate is located in the first groove, and a gap is formed between the bottom surface of the first groove and the fixed electrode; and a supporting column which extends along the direction vertical to the first wafer and is connected with the fixed electrode is arranged in the first groove. On the premise of ensuring sufficient mechanical support, stray capacitance between the bottom electrode and the substrate is effectively reduced so as to adapt to engineering application requirements in diversified working condition environments.

The invention discloses an MEMS infrared light source with a 3D structure and a preparation method thereof, and the preparation method comprises the steps: cleaning a silicon substrate, depositing supporting layers on the upper surface and the lower surface of the silicon substrate respectively, processing a heating electrode on the supporting layer on the upper surface, and processing to obtain an isolation layer covering the heating electrode and the supporting layer; an infrared radiation material layer is processed in the middle area of the isolation layer, and planar electrodes communicated with the heating electrode are processed on the two sides of the infrared radiation material layer; etching and windowing are carried out on the middle area of the supporting layer on the lower surface of the silicon substrate to form a substrate cavity, etching and windowing are carried out on the supporting layer on the peripheral area of the substrate cavity to form an etching window, substrate body silicon secondary etching is carried out on the lower surface of the silicon substrate to form a communicating cavity, and therefore the MEMS infrared light source with the 3D structure is obtained. According to the preparation method, the communication cavity beneficial to ventilation is formed by etching below the infrared light source through secondary etching, so that the reliability and the stability of high-temperature radiation of the infrared light source are improved.

An accelerometer includes a housing, a proof mass assembly encased in the housing, and one or more heating elements configured to heat the proof mass assembly in response to an electrical current. The one or more heating elements include a positive temperature coefficient of resistance (PTC) material. The PTC material exhibits a relatively high increase in resistance above a threshold temperature. For example, a ratio of the resistance of the PTC material above the threshold temperature to the resistance of the PTC material at room temperature (PTC ratio) is greater than five.

Embedded sensor structures and stretchable embedded sensor films including a plurality of embedded sensor packages are described. An embedded sensor structure may include a sensor package including an integrated circuit (IC) die and sensor die bonded to a front side of the IC die, with the sensor die including a diaphragm that is deflectable toward a cavity. A planarization layer laterally surrounds the sensor package, and metal routing is formed on a top side of the sensor die and spanning over the planarization layer. Other aspects are also described and claimed.

The invention discloses an electroplating process method for preparing a deep-etching thick metal mask, and belongs to the technical field of micro electro mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a wafer by using positive photoresist; then, carrying out seed layer sputtering on the wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative photoresist, and a thick photoresist layer with the thickness larger than that of a preset metal coating is formed; and finally, the electroplating area is electroplated, and the metal coating with the preset thickness is obtained. According to the method, the negative photoresist process is adopted, so that the transverse growth of the metal coating is effectively inhibited, the perpendicularity of the side wall of the metal coating is improved, and meanwhile, the damage to the surface of the wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that mushroom-shaped protrusions are easily formed on the edge of a plating layer, crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

According to the micro-mirror array based on the electric control deformable micro-nano structure provided by the invention, the micro-mirror array with remarkable size advantage and cost benefit can be manufactured by innovatively fusing the electric control deformable suspended nano structure and the mirror surface design of the supporting column body; the suspended nano-structure can generate surface shape deformation through potential regulation and control so as to drive the mirror surface array to generate displacement, so that optical phase regulation and control or optical display are carried out through the mirror surface array, and the key technical bottlenecks of complex manufacturing process, low duty ratio, insufficient dynamic performance and the like of existing market products are effectively solved; performance limitation of a traditional micro-mirror device is broken through, and meanwhile localization breakthrough of a core device is achieved.

A torsional micro-electro-mechanical systems (MEMS) mirror module provides for thermally-stable ancillary modes of mirror oscillation (e.g., vertical, horizontal, and rocking) by utilizing MEMS die packaging techniques that implement a cantilevered (i.e., fixed-free) die package in which one end of the die is partially fixedly-attached to a die carrier substrate while the non-attached end of the die is free from the die carrier substrate and unsupported. The cantilevered die package with fixed-free architecture effectively decouples the effects of coefficient of thermal expansion (CTE) mismatch of the MEMS die, die-bond adhesive, and die carrier substrate on temperature-dependent MEMS flexure stress. Ancillary mode oscillation frequencies changes with temperatures are thus limited to a smaller range relative to those experienced with conventional package designs.

The invention relates to a silicon oxide filled GST phase change shallow trench pixel-level electronic control metasurface structure and a processing method thereof. The metasurface structure comprises a silicon substrate, a silicon oxide layer and a top ITO electrode from bottom to top. A shallow trench is arranged in the silicon oxide layer, and a bottom layer ITO electrode and a GST nano column are deposited in the shallow trench from bottom to top; the GST nanorod is made of a GST phase change material and is connected with the bottom layer ITO electrode and the top layer ITO electrode; the bottom layer ITO electrode and the top layer ITO electrode are arranged in an orthogonal mode. According to the method, the problem of phase change structure damage caused in high-temperature deposition and plasma etching processes is solved, meanwhile, the process complexity and the process stability are optimized, and the metasurface machining cost is reduced.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

A microelectromechanical electrostatic actuator is provided that includes a first layer and a second layer, a first set of comb fingers in the first layer aligned with a second set of comb finger in the second layer. In this aspect, the x-direction width of the comb fingers of the first set is tapered along the vertical direction, such that an electrostatic force between comb fingers is increased by tapering to thereby lower a required actuation voltage.