3046results about "Decorative surface effects" patented technology

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention relates to a material that is at least partially transparent and that has structures introduced into its internal volume after material production, which modify the volume with respect to its optical properties compared to the unstructured volume. The material according to the invention is characterized by its formation as an at least partially transparent surface coating, wherein the structure comprises modification bubbles that are formed in at least one plane within the volume.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention discloses a wafer bonding method, which comprises the following steps of: 1, providing a first wafer and a second wafer, the surface of the first wafer being provided with a microstructure with a high aspect ratio; step 2, cleaning the first wafer and the second wafer; step 3, performing vacuum drying treatment on the first wafer and the second wafer, wherein the vacuum pressure is controlled to be 0.1-10 Torr in the vacuum drying treatment process; step 4, carrying out pre-bonding on the first wafer and the second wafer to form a bonding body; and step 5, carrying out annealing treatment on the bonding body. Aiming at the problem of residual water in the pre-cleaning process in the bonding process of the micro-structure wafer with a high aspect ratio, the wafer is placed in a controllable vacuum environment, phase change boiling of liquid water under the condition of no heat input is realized, and the problem of high-temperature heat damage caused by an existing heating and baking method is effectively avoided.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

The invention relates to the technical field of semiconductor devices, in particular to an MEMS inertial sensor and a preparation method thereof, and the sensor comprises a first supporting substrate and a first wafer which are stacked; a first groove is formed in one side, close to the first wafer, of the first supporting substrate; the first wafer comprises a fixed electrode, the projection of the fixed electrode on the first supporting substrate is located in the first groove, and a gap is formed between the bottom surface of the first groove and the fixed electrode; and a supporting column which extends along the direction vertical to the first wafer and is connected with the fixed electrode is arranged in the first groove. On the premise of ensuring sufficient mechanical support, stray capacitance between the bottom electrode and the substrate is effectively reduced so as to adapt to engineering application requirements in diversified working condition environments.

An accelerometer includes a housing, a proof mass assembly encased in the housing, and one or more heating elements configured to heat the proof mass assembly in response to an electrical current. The one or more heating elements include a positive temperature coefficient of resistance (PTC) material. The PTC material exhibits a relatively high increase in resistance above a threshold temperature. For example, a ratio of the resistance of the PTC material above the threshold temperature to the resistance of the PTC material at room temperature (PTC ratio) is greater than five.

The invention discloses an electroplating process method for preparing a deep-etching thick metal mask, and belongs to the technical field of micro electro mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a wafer by using positive photoresist; then, carrying out seed layer sputtering on the wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative photoresist, and a thick photoresist layer with the thickness larger than that of a preset metal coating is formed; and finally, the electroplating area is electroplated, and the metal coating with the preset thickness is obtained. According to the method, the negative photoresist process is adopted, so that the transverse growth of the metal coating is effectively inhibited, the perpendicularity of the side wall of the metal coating is improved, and meanwhile, the damage to the surface of the wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that mushroom-shaped protrusions are easily formed on the edge of a plating layer, crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

A microelectromechanical electrostatic actuator is provided that includes a first layer and a second layer, a first set of comb fingers in the first layer aligned with a second set of comb finger in the second layer. In this aspect, the x-direction width of the comb fingers of the first set is tapered along the vertical direction, such that an electrostatic force between comb fingers is increased by tapering to thereby lower a required actuation voltage.

The invention relates to a laminated staggered sub-wavelength polarization grating structure and a preparation method thereof, through staggered arrangement of a first metal grating layer and a second metal grating layer, transmission of polarized light of a transverse electric field can be effectively inhibited, and the extinction ratio is remarkably improved. Through the substrate, the first dielectric layer, the second dielectric layer, the first metal grating layer, the third dielectric layer and the second metal grating layer which are sequentially arranged from bottom to top, the whole device obtains a higher extinction ratio while keeping high transmittance, the overall structure is simple, the processing difficulty and cost are reduced, and the production efficiency is improved. And the number of the used dielectric layers and metal layers is small, the thickness requirement is low, and therefore it is ensured that the cost is controllable.

A method for producing a nanochannel (200) is described with the following steps a) depositing a nanochannel sacrificial layer (3) using an ALD process on a substrate (1), which defines the subsequent channel height at least at one point b) depositing a first covering layer (4) on the nanochannel sacrificial layer (3) c) At least partially structuring and / or etching the nanochannel sacrificial layer (3) and the first cover layer (4) so ​​that a first exposed region (10) is formed d) At least partial etching of the now exposed nanochannel sacrificial layer (3) with an etching rate < 100nm / min, preferably <10nm / min, and particularly preferably <5nm / min and even more preferably <2nm / min, so that an under-etched second exposed region (20) is formed which defines the channel width e) depositing a second cover layer (5) onto the first cover layer (4) and the first exposed region (10) so that the second exposed region (20) is sealed and forms a nanochannel (200).

The invention belongs to the field of hydrogen sensors, and particularly relates to an MEMS hydrogen sensor based on a high-entropy alloy and a preparation method of the MEMS hydrogen sensor. The hydrogen sensor comprises an insulating substrate, an interdigital electrode and a hydrogen sensitive layer, the hydrogen sensitive layer is formed by compounding high-entropy alloy nanoparticles composed of at least five transition metal elements and a semiconductor metal oxide substrate, and the high-entropy alloy nanoparticles are uniformly dispersed on the surface of the semiconductor metal oxide substrate to form a heterojunction; the atomic percent of each transition metal element in the high-entropy alloy nanoparticles is 5%-35%; the semiconductor metal oxide substrate is of a SnO2 or ZnO nano structure, and the specific surface area is larger than or equal to 50 m < 2 > / g. The preparation method is the preparation method of the hydrogen sensor. The hydrogen sensor provided by the invention has an ultralow hydrogen detection limit, the response speed is within a second level, the consumption of noble metal is greatly reduced, and the activity attenuation in a high-temperature environment is small.

The invention discloses a sub-nano two-dimensional heterojunction nanopore preparation method based on HIM pore preforming and STEM closed-loop control, and belongs to the technical field of micro-nano manufacturing and MEMS. HIM is utilized to form a 1-3 nm primary pore in a two-dimensional heterojunction film, and then level convergence of the pore diameter is achieved in the STEM through HAADF image intensity threshold monitoring and PID self-adaptive control; and the nano titanium dioxide is stably controlled in a range of 0.5-0.9 nm. The prepared hole has the characteristics that mu belongs to [0.50, 0.90] nm, sigma is smaller than or equal to 0.10 nm, RMS is smaller than or equal to 0.30 nm, the drift rate is smaller than or equal to 0.02 nm.h <-1 > and the like, the repeatability of the hole preparation process is high, the edge is smooth and stable, and the method is suitable for DNA sequencing, ion screening and environmental combined pollutant detection.

An MEMS wafer corrosion thickness monitoring and corrosion process evaluation method comprises the steps that a plurality of monitoring points are designed in a preset area of a silicon wafer pattern surface, the monitoring points are of structures with different shapes and different depths, structures with different heights are formed on photoresist through a multi-depth photoetching process, and the monitoring points are used for monitoring the corrosion thickness of the silicon wafer. The structure is integrally transferred to the surface of a silicon wafer through one-time dry etching, multiple depth monitoring points are formed, an anti-corrosion protection layer is deposited on the pattern face of the wafer, wet etching is carried out on the back face of the wafer, the light-transmitting state of the monitoring points is recognized through chemical corrosive liquid and an optical detection system, and the light-transmitting area proportion is quantified; according to the light transmission sequence and time, the corrosion depth and uniformity of each area of the wafer are calculated, the process result and the wafer quality are evaluated, the wet method corrosion depth can be accurately controlled, the corrosion uniformity in the wafer is greatly improved, and the manufacturing process of the monitoring structure is simplified.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention discloses a wafer-level fusion bonding method and a preparation method of an MEMS device, and the method comprises the steps: providing a first silicon wafer which is provided with a front surface and a back surface which are opposite to each other; forming a groove in the front surface of the first silicon wafer and forming a chamfer at the corner of the top edge of the groove; forming a silicon oxide dielectric layer on the front surface of the first silicon wafer in a thermal oxidation growth mode, wherein the silicon oxide dielectric layer covers the bottom of the groove, the side wall of the groove and the front surface of the first silicon wafer outside the range of the groove; providing a second silicon wafer, wherein the second silicon wafer is provided with a front surface and a back surface which are opposite; and bonding the front surface of the second silicon wafer with the silicon oxide dielectric layer on the front surface of the first silicon wafer. According to the invention, the problem of bonding failure caused by rising of the edge of the groove after thermal oxidation growth can be solved.

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A method for operating a projection exposure system (1) comprises the following steps: providing a projection exposure system (1) with a radiation source (1) for generating illumination radiation (3), an illumination optic (11) for transferring the illumination radiation (3) from the radiation source (2) to an object field (8) extending in a scan direction (y) and a cross-scan direction (x), wherein the illumination optic (11) has at least one faceted mirror (6, 7) with a plurality of individual mirrors, and wherein at least a subset of the individual mirrors is configured such that they only partially illuminate the object field (8) in the scan direction (y), and a projection optic (10) for imaging a reticle (12) arranged in the object field (8) of the illumination optic (11) onto a wafer (19) arranged in an image field (17) of the projection optic (10), and specifying a set of at least one element of field-dependent aberrations. (Ai(x, y);i=(1..M)), specification of a target vector (Z(x) = (Z1(x), ..., Z; M (x) T ) for the target values ​​Z i (x) of the aberrations Ai(x, y) after averaging over the scan direction (y), dividing the extent of the object field (8) in the scan direction (y) into j ≥ 2 intervals ([y0; y1], ..., [y j-1 ; y j ]) and determining scan weights (gi(x, y)) which characterize a dependence of an illuminance at a location x in the cross-scan direction in the object field () on a position in the scan direction (y) such that a deviation of a weighted aberration vector A weighted ( x ) → : = ∑ gi A l → is reduced from the target vector (Z(x)).

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, forming a plurality of MEMS standard devices and at least one MEMS test device on the front surface of the substrate, enabling a vibrating diaphragm of the MEMS test device to be provided with an opening, and enabling vibrating diaphragms of the MEMS standard devices not to be provided with an opening; the back surface of the substrate is provided with a back cavity forming area corresponding to each device; forming a gas guide groove in the back surface of the substrate, wherein the gas guide groove is connected with the MEMS standard device and the back cavity forming area of the MEMS test device; a back cavity is formed in a back cavity forming area on the back face of the substrate, and the back cavities of the MEMS standard device and the MEMS test device are communicated through a gas guide groove. According to the invention, through the arrangement of the air guide groove, the diaphragm in the MEMS standard device can be prevented from being absorbed or even broken, so that the CP test can be carried out on the MEMS standard device at the delivery end, and the reliability of the product is improved.

The invention discloses a high aspect ratio deep silicon etching structure and a patterning method thereof. The patterning method comprises the following steps: providing a substrate made of silicon; forming a plurality of photoresist patterns on the surface of the substrate, wherein an opening is formed between every two adjacent photoresist patterns; bombarding the interface of the substrate at the inner bottom corner of the opening by using plasma of a first gas at a first ultralow temperature to form a first protective film; depositing a polymer layer on the substrate, the photoresist pattern and the first protective film for protection by using plasma of second gas at a second ultralow temperature; etching the polymer layer and the substrate by using plasma of a third gas at a third ultralow temperature; repeating the steps of depositing the polymer layer and etching until a high aspect ratio deep silicon etching structure is formed on the substrate; and removing the photoresist pattern. According to the invention, the uniform protection of the side wall under the conditions of smaller size and higher aspect ratio can be realized, and the etching rate can be improved.

The invention provides a capacitive MEMS device and a manufacturing method thereof. The capacitive MEMS device comprises at least one MEMS chip, each MEMS chip comprises a wafer substrate and a structural layer arranged on the top surface of the wafer substrate, and a first cavity structure is formed in the wafer substrate. The structural layer covers the first cavity structure and comprises a vibrating diaphragm fixed on the top surface of the wafer substrate and a back polar plate which is fixed on the wafer substrate and is spaced from the vibrating diaphragm to form a capacitor, the bottom surface of the wafer substrate is provided with a groove structure which is sunken towards the direction of the structural layer, and the groove structure partially penetrates through the wafer substrate; the first cavity structure penetrates through the groove bottom of the groove structure and the top surface of the wafer substrate along a first direction; the groove structure and the first cavity structure jointly form an air flowing channel, and the groove structure is communicated with the first cavity structure and the outside of the MEMS chip. According to the capacitive MEMS device, balance control over the air pressure in the device is achieved, and the influence of the air pressure on the capacitive MEMS device is avoided.

The invention provides a silicon-based free space type optical MEMS accelerometer and a manufacturing method, the upper layer of the accelerometer is a glass substrate free space optical sensitive structure, the lower layer of the accelerometer is a silicon-based horizontal axis MEMS sensitive structure, and the upper layer structure is fixed on the lower layer structure through a bonding process. Wherein the upper-layer optical sensitive structure consists of a pair of Michelson interferometers, a glass anchor point and a glass mass block; and the lower-layer MEMS sensitive structure consists of four groups of cantilever beams, a silicon anchor point and a silicon mass block. The lower layer MEMS sensitive structure converts the horizontal shaft input acceleration into the displacement of the silicon mass block, the displacement is synchronously transmitted to the glass mass block, and the pair of oppositely arranged Michelson interferometers converts the displacement into the reverse transformation of an interference light phase, so that the high-precision differential detection of the acceleration is realized. The micro-optical accelerometer scheme provided by the invention has the outstanding advantages of high detection sensitivity, strong common-mode error resistance and high integration level.