4690results about "Decorative surface effects" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

The invention provides a flexible palladium film hydrogen sensor and a preparation method thereof, the flexible palladium film hydrogen sensor is sequentially provided with a flexible substrate, a hydrogen sensitive sensing layer and a contact connection layer from bottom to top, and the contact connection layer is connected with a resistance measurement unit; and the hydrogen-sensitive sensing layer is a palladium or palladium alloy film with a conical micro-nano structure. The palladium or palladium alloy thin film with the conical micro-nano structure provides a hydrogen sensor conical surface micro-nano structure with a high specific surface area for the flexible palladium thin film hydrogen sensor, and the process that hydrogen is adsorbed, dissolved and diffused into the palladium or palladium alloy thin film is accelerated, so that the response speed of the sensor is increased; according to the hydrogen sensor, the flexible substrate is adopted, so that the hydrogen sensor can be conveniently arranged in various narrow spaces, and the applicability of the hydrogen sensor in various scenes is improved.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention relates to a material that is at least partially transparent and that has structures introduced into its internal volume after material production, which modify the volume with respect to its optical properties compared to the unstructured volume. The material according to the invention is characterized by its formation as an at least partially transparent surface coating, wherein the structure comprises modification bubbles that are formed in at least one plane within the volume.

A MEMS sensor and a preparation method therefor. The method comprises: forming a first oxide layer on a substrate wafer, performing patterned etching on the first oxide layer, and performing deposition and doping on the first oxide layer that has undergone the patterned etching, so as to form a first polycrystalline silicon layer; performing patterned etching on the first polycrystalline silicon layer to form a wiring, and depositing a second oxide layer on the first polycrystalline silicon layer; upon performing patterned etching on the second oxide layer, performing deposition and doping to form a second polycrystalline silicon layer; performing patterned etching on the second polycrystalline silicon layer to form bonding anchor points and a capacitive plate having a lower height than the bonding anchor points; bonding a device wafer with the bonding anchor points, and performing patterned etching on the device wafer to generate a movable structure, so as to obtain a device layer; and bonding the side of the device wafer distant from the substrate wafer with a cover layer.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention discloses a TGV technology-based MEMS thermal flow velocity sensor convenient for integrated packaging and a preparation method thereof. The TGV technology-based MEMS thermal flow velocity sensor comprises a glass substrate, a metal conductive through column, a side wall metal seed layer, an adhesion layer, a temperature measurement resistor, a central heating resistor, an insulation protection layer and a pressure welding block. Wherein the TGV conductive metal through column is formed by performing through hole forming on the glass and then performing side wall seed layer deposition and metal electroplating and filling processes. According to the metal conductive through column, an electric signal of a sensor chip on the front surface of the chip can be transmitted to the back surface of the chip, so that the chip can be conveniently integrated and packaged with other sensor chips, and the development requirements of MEMS devices in the multi-sensor integration and multi-functionalization directions are met. A traditional thermal type MEMS flow velocity sensor is manufactured on a silicon substrate, the sensor is manufactured on a glass through hole TGV substrate, the low heat conductivity coefficient of the glass substrate inhibits invalid heat diffusion of a heating resistor in the center of the thermal type flow velocity sensor, and the sensitivity and performance of the device are improved.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The MEMS triaxial accelerometer with the self-checking function comprises a cap layer, a structural layer and a substrate layer, the structural layer is clamped and packaged between the cap layer and the substrate layer, the structural layer comprises an X-axis acceleration detection array, a Z-axis acceleration detection array and a Y-axis acceleration detection array which have the self-checking function, and the X-axis acceleration detection array, the Z-axis acceleration detection array and the Y-axis acceleration detection array have the self-checking function. A Z-axis sensitive structure release groove is formed in the middle of the structural layer, the Z-axis acceleration detection array can move in the Z-axis direction along the Z-axis sensitive structure release groove, an X-axis sensitive structure release groove is formed in one side of the Z-axis acceleration detection array, and the X-axis acceleration detection array can move in the X-axis direction along the X-axis sensitive structure release groove. A Y-axis sensitive structure release groove is formed in the other side of the Z-axis acceleration detection array, and the Y-axis acceleration detection array can move in the Y-axis direction along the Y-axis sensitive structure release groove. The accelerometer provided by the invention has a self-checking function, can apply known signals, and is used for detecting the response of the sensor under different working conditions.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a nano needle tip split ring 3D structure periodic array. According to the method, after a reflecting layer and a supporting layer are deposited on a silicon substrate, polystyrene nanospheres are self-assembled, the volume of the nanospheres is reduced through reactive ion etching, then two times of inclined magnetron sputtering are carried out, deposited precious metal is etched through a reactive ion etching machine, and the silicon substrate is obtained. And removing the nanosphere mask to obtain the 3D structure periodic array of the nanotip split ring. The method has the characteristics of simple preparation process, good uniformity, high order degree and strong repeatability, and has wide application potential in the fields of SERS (Surface Enhanced Raman Scattering), photoelectric property detection and the like.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention discloses a wafer bonding method, which comprises the following steps of: 1, providing a first wafer and a second wafer, the surface of the first wafer being provided with a microstructure with a high aspect ratio; step 2, cleaning the first wafer and the second wafer; step 3, performing vacuum drying treatment on the first wafer and the second wafer, wherein the vacuum pressure is controlled to be 0.1-10 Torr in the vacuum drying treatment process; step 4, carrying out pre-bonding on the first wafer and the second wafer to form a bonding body; and step 5, carrying out annealing treatment on the bonding body. Aiming at the problem of residual water in the pre-cleaning process in the bonding process of the micro-structure wafer with a high aspect ratio, the wafer is placed in a controllable vacuum environment, phase change boiling of liquid water under the condition of no heat input is realized, and the problem of high-temperature heat damage caused by an existing heating and baking method is effectively avoided.

The invention relates to the technical field of hot stamping equipment, and discloses a digital plane and curved surface dual-purpose image-text hot stamping machine system for the surface of a cylindrical product, which comprises a modular structural design, a dual-mode positioning system and a digital control unit, the self-adaptive hot stamping head adopts a flexible stamping module driven by air pressure and hydraulic pressure, and the dual-mode positioning system comprises a plane mode and a curved surface mode. According to the hot stamping machine system, a self-adaptive hot stamping head adopts a pneumatic / hydraulic driven flexible stamping module, a pressure sensor array is arranged in the self-adaptive hot stamping head to adjust local pressure in real time, a dual-mode positioning system is adopted, a vacuum adsorption platform is adopted in a plane mode, a curved-surface mode programmable rotary clamp is adopted, 0-300 rpm stepless speed regulation is supported, a dual-mode hot stamping mechanism is initiated, and the self-adaptive hot stamping head is applied to the hot stamping machine system. The plane / curved surface mode is switched within 10 seconds through the quick-change interface, the hot stamping track is adjusted in real time based on workpiece three-dimensional scanning data, and the waste film recovery rate is increased to 95% or above through the environment-friendly hot stamping film recovery system.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

A method of fabricating nanostructured silicon on a substrate comprises a step of conducting a catalytic chemical vapor deposition using a Si-containing precursor and a carrier gas to generate on the substrate a silicon layer comprising columnar polycrystalline silicon structures and amorphous silicon containing material therebetween. The method further comprises conducting an anisotropic etching process of the silicon layer to remove the silicon between the polycrystalline silicon columns in order to fabricate the nanostructured silicon on the substrate.

The invention discloses a piezoresistive pressure sensor chip and a preparation method thereof, and belongs to the technical field of micro-electromechanical systems. The piezoresistive pressure sensor chip comprises a substrate, the back of the substrate is etched with a cavity, the center of the cavity is provided with a cross-shaped mass block, and four hollow islands and four peninsula are arranged along the linear direction of the cross-shaped mass block; a plurality of groups of piezoresistor strips are arranged on the front surface of the substrate, each group of piezoresistor strips comprises a first piezoresistor strip component arranged close to the center and a second piezoresistor strip component arranged close to the side wall of the cavity, and the first piezoresistor strip component forms an internal Wheatstone bridge through a first metal lead group; the second piezoresistor strip component forms an external Wheatstone bridge through a second metal lead group; the glass is arranged on the substrate back. The piezoresistive pressure sensor chip can measure the pressure of a micro-pressure section, can bear high overload equivalent to a plurality of times of the full scale, and has the advantages of high sensitivity, good linearity, high precision, good dynamic performance and the like.

The invention relates to an MEMS (Micro Electro Mechanical System) packaging method. The method comprises the following steps of S1, bonding a device layer wafer on a substrate; s2, etching the device layer wafer to obtain an acceleration sensor structure and a gyroscope structure; s3, in a nitrogen atmosphere, pre-bonding an upper cover plate on the acceleration sensor structure and the gyroscope structure, so that an acceleration sensor structure cavity and a gyroscope structure cavity between the upper cover plate and the substrate are filled with nitrogen; and S4, eliminating nitrogen in the cavity of the gyroscope structure, and bonding the acceleration sensor structure and the gyroscope structure on the upper cover plate to obtain the gyroscope structure vacuum chamber. The acceleration sensor chip and the gyroscope chip are prepared on one substrate through MEMS packaging, the preparation process is shortened, the manufacturing period and cost of the MEMS chips are reduced, combined packaging of the two chips is achieved through combined nesting of different types of MEMS packaging modes, and the packaging efficiency is improved. The packaging volume is reduced, and the space utilization rate and the integration capability are improved.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

The invention belongs to the technical field of micro-nano machining, and relates to a preparation method of a metal nano slot array, which comprises the following steps: preparing a metal electrode on a substrate and patterning to obtain a first electrode; depositing a sacrificial structure at the joint of the first electrode and the substrate and patterning to obtain a sacrificial layer; preparing another metal electrode on the substrate and patterning to obtain a second electrode, and enabling the second electrode to cover the sacrificial layer; removing an electrode overlapping top cap at the junction of the first electrode and the second electrode by adopting a chemical mechanical polishing method to enable the sacrificial layer to be in an exposed state; and processing the sacrificial layer by adopting a wet etching method, so that a nano gap is formed between the first electrode and the second electrode, and the metal nano gap array is obtained. The metal nano gap array can be prepared, the heterogeneous electrode can be prepared, the depth-to-width ratio is high, the cost is low, and large-area batch preparation can be achieved.

The invention relates to the technical field of semiconductor devices, in particular to an MEMS inertial sensor and a preparation method thereof, and the sensor comprises a first supporting substrate and a first wafer which are stacked; a first groove is formed in one side, close to the first wafer, of the first supporting substrate; the first wafer comprises a fixed electrode, the projection of the fixed electrode on the first supporting substrate is located in the first groove, and a gap is formed between the bottom surface of the first groove and the fixed electrode; and a supporting column which extends along the direction vertical to the first wafer and is connected with the fixed electrode is arranged in the first groove. On the premise of ensuring sufficient mechanical support, stray capacitance between the bottom electrode and the substrate is effectively reduced so as to adapt to engineering application requirements in diversified working condition environments.

The invention relates to an optical probe (1) which is designed for optical coupling to at least one micro-optical component (50) and to a method for its production, wherein the optical probe (1) comprises: - a probe head (10); - at least one micro-optical element (20) having a mechanical connection to the probe head (10) and configured to establish an optical coupling to the at least one micro-optical component (50); and - at least one sensor structure (21) separate from the at least one micro-optical element (20) and configured to generate a sensor signal (40) indicating a positioning of the probe head (10) relative to an object (100).