The invention relates to the technical field of Micro-
LED display, and discloses a Micro-LED ISO
vertical angle etching method, which comprises the following steps: S1, epitaxial layer
growth control: providing a
sapphire substrate as a substrate, growing an epitaxial layer structure on the substrate, and growing
silicon oxide with a certain thickness on the substrate through PECV equipment to serve as a protective layer, S2, photoetching patterning: selecting positive
photoresist, and performing photoetching patterning on the positive
photoresist to form an epitaxial layer; the method comprises the following steps: S1,
coating the surface of a protective layer with a spin coater, and then carrying out photoetching and developing to manufacture a pattern, needing to be etched, of the ISO side wall, S3, carrying out
metal coating and patterning, S4, carrying out
dry etching epitaxy, and S5, removing the protective layer. The ISO side wall
epitaxy with the angle approaching to be vertical is obtained by removing the epitaxial
protection layer through wet
etching or
dry etching, the light-emitting area loss of the Micro-LED is reduced, the light emitting efficiency is improved, conditions are provided for
Pitch reduction of a
chip, meanwhile,
chip breakage caused in the subsequent
laser stripping process is reduced, and the yield and stability of
chip manufacturing are improved.