The invention provides a pressure change memory. Each pressure change memory unit comprises a first
electrode, a first
dielectric layer, a memory function layer, a second
dielectric layer and a second
electrode which are sequentially arranged from top to bottom, the storage function layer has an amorphous characteristic and a defect state with the concentration higher than 10 < 14 > cm <-3 >, and the component is selected from a
sulfur threshold switch material, an
oxide, a
nitride or a
solar cell material. The device realizes controllable offset of
threshold voltage under the action of forward and reverse electric fields, and takes the
voltage difference as a read-write window, thereby realizing nonvolatile
information storage. Through asymmetric structure design, storage function layer multi-layer design or PN junction introduction, a read-write window can be further expanded, and the reliability of
data discrimination is improved. The memory is simple in structure and easy to integrate, has the characteristics of high speed and low
power consumption, and is suitable for three-dimensional stacked high-density storage application.