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5895 results about "Quantum" patented technology

In physics, a quantum (plural: quanta) is the minimum amount of any physical entity (physical property) involved in an interaction. The fundamental notion that a physical property may be "quantized" is referred to as "the hypothesis of quantization". This means that the magnitude of the physical property can take on only discrete values consisting of integer multiples of one quantum.

Multi-dimensional data protection and mirroring method for micro level data

The invention discloses a data validation, mirroring and error/erasure correction method for the dispersal and protection of one and two-dimensional data at the micro level for computer, communication and storage systems. Each of 256 possible 8-bit data bytes are mirrored with a unique 8-bit ECC byte. The ECC enables 8-bit burst and 4-bit random error detection plus 2-bit random error correction for each encoded data byte. With the data byte and ECC byte configured into a 4 bit×4 bit codeword array and dispersed in either row, column or both dimensions the method can perform dual 4-bit row and column erasure recovery. It is shown that for each codeword there are 12 possible combinations of row and column elements called couplets capable of mirroring the data byte. These byte level micro-mirrors outperform conventional mirroring in that each byte and its ECC mirror can self-detect and self-correct random errors and can recover all dual erasure combinations over four elements. Encoding at the byte quanta level maximizes application flexibility. Also disclosed are fast encode, decode and reconstruction methods via boolean logic, processor instructions and software table look-up with the intent to run at line and application speeds. The new error control method can augment ARQ algorithms and bring resiliency to system fabrics including routers and links previously limited to the recovery of transient errors. Image storage and storage over arrays of static devices can benefit from the two-dimensional capabilities. Applications with critical data integrity requirements can utilize the method for end-to-end protection and validation. An extra ECC byte per codeword extends both the resiliency and dimensionality.

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

Multicarrier Sub-Layer for Direct Sequence Channel and Multiple-Access Coding

Carrier Interferometry (CI) provides wideband transmission protocols with frequency-band selectivity to improve interference rejection, reduce multipath fading, and enable operation across non-continuous frequency bands. Direct-sequence protocols, such as DS-CDMA, are provided with CI to greatly improve performance and reduce transceiver complexity. CI introduces families of orthogonal polyphase codes that can be used for channel coding, spreading, and/or multiple access. Unlike conventional DS-CDMA, CI coding is not necessary for energy spreading because a set of CI carriers has an inherently wide aggregate bandwidth. Instead, CI codes are used for channelization, energy smoothing in the frequency domain, and interference suppression. CI-based ultra-wideband protocols are implemented via frequency-domain processing to reduce synchronization problems, transceiver complexity, and poor multipath performance of conventional ultra-wideband systems. CI allows wideband protocols to be implemented with space-frequency processing and other array-processing techniques to provide either or both diversity combining and sub-space processing. CI also enables spatial processing without antenna arrays. Even the bandwidth efficiency of multicarrier protocols is greatly enhanced with CI. CI-based wavelets avoid time and frequency resolution trade-offs associated with conventional wavelet processing. CI-based Fourier transforms eliminate all multiplications, which greatly simplifies multi-frequency processing. The quantum-wave principles of CI improve all types of baseband and radio processing.

Method and apparatus for managing and uniformly maintaining pixel circuitry in a flat panel display

InactiveUS20080048951A1Accurate aging correctionStatic indicating devicesQuantum efficiencyDisplay design
The present invention describes a method and apparatus for measuring the voltage and current characteristics of the OLED pixel as it ages and correlating the measured data to the decrease in quantum efficiency and changes in OLED impedance over the life of the OLED, so that corrections can be made to the image drive system to prevent image sticking and color point drift. The method and apparatus of the present invention do not require any additional circuitry or changes in the display design. The circuitry of the present invention is implemented in the display driver integrated circuit (IC) chips. The basis of the invention is the luminance-current-voltage (LIV) curves which characterize the OLED materials over their life time. A series of these curves are stored in memory representing a OLED material at various ages. The apparatus of the present invention is used to measure driver voltages and currents for a pixel having an OLED, which measurements are then used to extract the voltage current curve for the OLED at any point in time. The extracted curve is compared to the aging curves stored in memory to determine the aging curve that best describes the measured present voltage current characteristic of the pixel. That aging curve is used to drive the pixel.
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