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11458results about How to "Reduce leakage" patented technology

Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

Device for use in the eye

A glaucoma filtration implant is constituted by a generally tubular body section having an oblong external diameter formed of a continuous convex curve. The device preferably has flow resistance structure provided by a portion of the internal lumen having a reduced diameter. The flow resistance structure may have a length of up to 5000 mum and a diameter in the range 15 to 50 mum, the diameter being selected so as to achieve a pressure drop along the flow resistance structure in the range 5 to 15 mm Hg. The internal conduit for liquid flow also may include a removable flow inhibitor, which can be removed after implantation by a laser, such as an ophthalmic YAG laser. The device is made of biocompatible materials.

Methods and systems for reducing paravalvular leakage in heart valves

InactiveUS20100168844A1Reducing paravalvular leakageIncrease opportunitiesHeart valvesParavalvular leakageCuff
A replacement valve comprises a valve body having an inflow end, an outflow end, and a valve support structure, and a valve cuff surrounding the inflow end of the valve body. The valve support structure surrounds the valve body, and the valve cuff is coupled to the valve support structure. The valve cuff includes a skirt portion and at least one flange coupled to and protruding from the skirt portion, the at least one flange forming a seal around the inflow end of the valve body.

Planar capacitor memory cell and its applications

InactiveUS7209384B1Less complicated to fabricateImprove performanceTransistorSolid-state devicesHemt circuitsEngineering
A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second terminal serves as storage node, third terminal is floating, and fourth terminal serves as bit line, wherein back channel effect is suppressed adding additional ions in the bottom side of third terminal or applying negative voltage in the well or substrate. A capacitor plate couples to second terminal, which plate has no coupling region to first, third and fourth terminal. With no coupling, the inversion layer of plate in the storage node is isolated from the adjacent nodes. In doing so, the plate can swing ground level to positive supply level to write. As a result, no negative generator is required for controlling plate. Word line and bit line keep ground level during standby, and rise to supply level for read or write operation. In this manner, no holding current is required during standby, and operating current is dramatically reduced with no negative generator. Write has a sequence to clear the state of cell before writing to store data regardless of previous state. Refresh cycle is periodically asserted to sustain data. The present invention can be applied for destructive read, or for nondestructive read adding pull-down device to bit line. The height of cell is almost same as control circuit on the bulk or SOI wafer.

Hand access port device

InactiveUS6908430B2Reduce leakagePrevent substantial leakage of gasEar treatmentCannulasEngineeringGas chamber
An access port device is provided which enables hand access to a patient's body cavity while retaining pneumoperitoneum by minimizing gas leakage through the access port device. In one embodiment, the access port device includes first and second sleeves forming an inflatable chamber and a third sleeve mounted within the second sleeve including an elastic band for sealingly engaging a hand or wrist. The access port device may also include an exit opening seal for positioning within the patient's body cavity and a second sleeve retraction prevention device for preventing inadvertent movement of the second sleeve outwardly from the patient's body cavity through the incision. In another embodiment, an access port device provided which includes an inner annular sealing device and a non-adhesive outer annular sealing device for creating a non-adhesive seal against the outer surface of a patient. An access component forming an inflatable chamber and including an integral sleeved glove may also be provided. In another embodiment, a sealing force applying feature includes a biasing surface formed on a generally flat annular extension and exposed to gas pressure in an adjacent gas chamber positioned to receive leakage gas leakage between the access port device an the patient to create sealing forces which tend to enhance the seal between the flexible annular extension and patient's skin.

High density NAND non-volatile memory device

Non-volatile memory devices and arrays are described that utilize dual gate (or back-side gate) non-volatile memory cells with band engineered gate-stacks that are placed above or below the channel region in front-side or back-side charge trapping gate-stack configurations in NAND memory array architectures. The band-gap engineered gate-stacks with asymmetric or direct tunnel barriers of the floating node memory cells of embodiments of the present invention allow for low voltage tunneling programming and efficient erase with electrons and holes, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The memory cell architecture also allows for improved high density memory devices or arrays with the utilization of reduced feature word lines and vertical select gates.

Superjunction Structures for Power Devices and Methods of Manufacture

A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.
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