11354results about How to "Reduce leakage" patented technology

The methods, devices, and systems are provided for performing endovascular repair of atrioventricular and other cardiac valves in the heart. Regurgitation of an atrioventricular valve, particularly a mitral valve, can be repaired by modifying a tissue structure selected from the valve leaflets, the valve annulus, the valve chordae, and the papillary muscles. These structures may be modified by suturing, stapling, snaring, or shortening, using interventional tools which are introduced to a heart chamber. Preferably, the tissue structures will be temporarily modified prior to permanent modification. For example, opposed valve leaflets may be temporarily grasped and held into position prior to permanent attachment.

A surgical fastener for use with an anastomosis of two tissues includes a base leg and an upright leg. The base leg is selectively deformable and includes a traumatic tip for piecing tissue. The surgical fastener also includes at least one capillary disposed on the base leg which has a reservoir defined therein for retaining a liquid, e.g., bioadhesive, bonding agent, medicament, etc. Each of the capillaries is ruptureable upon deformation of the surgical fastener to dispense the liquid to the anastomosis site.

A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells in NOR or NAND memory architectures that allow for direct tunnel programming and erase, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The low voltage direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and enhancing device lifespan. The low voltage direct tunnel program and erase capability also enables size reduction through low voltage design and further device feature scaling. Memory cells of the present invention also allow multiple bit storage. These characteristics allow memory device embodiments of the present invention to operate within the definition of a universal memory, capable of replacing both DRAM and ROM in a system.

A glaucoma filtration implant is constituted by a generally tubular body section having an oblong external diameter formed of a continuous convex curve. The device preferably has flow resistance structure provided by a portion of the internal lumen having a reduced diameter. The flow resistance structure may have a length of up to 5000 mum and a diameter in the range 15 to 50 mum, the diameter being selected so as to achieve a pressure drop along the flow resistance structure in the range 5 to 15 mm Hg. The internal conduit for liquid flow also may include a removable flow inhibitor, which can be removed after implantation by a laser, such as an ophthalmic YAG laser. The device is made of biocompatible materials.

A replacement valve comprises a valve body having an inflow end, an outflow end, and a valve support structure, and a valve cuff surrounding the inflow end of the valve body. The valve support structure surrounds the valve body, and the valve cuff is coupled to the valve support structure. The valve cuff includes a skirt portion and at least one flange coupled to and protruding from the skirt portion, the at least one flange forming a seal around the inflow end of the valve body.

Intravascular devices (e.g., stents, stent grafts, covered stents, aneurysm coils, embolic agents and drug delivery catheters and balloons) are used in combination with fibrosing agents in order to induce fibrosis that may otherwise not occur when the implant is placed within an animal or to promote fibrosis betweent the devices and the host tissues. Compositions and methods are described for use in the treatment of aneurysms and unstable arterial (vulnerable) plaque.

A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.

UV reflectors incorporated in UV LED-based light sources reduce the amount of UV radiation emission into the surroundings and increase the efficiency of such light sources. UV reflectors are made of nanometer-sized particles having a mean particle diameter less than about one-tenth of the wavelength of the UV light emitted by the UV LED, dispersed in a molding or casting material surrounding the LED. Other UV reflectors are series of layers of materials having alternating high and low refractive indices; each layer has a physical thickness of one quarter of the wavelength divided by the refractive index of the material. Nanometer-sized textures formed on a surface of the multilayered reflector further reduce the emission of UV radiation into the surroundings. UV LED-based light sources include such a multilayered reflector disposed on an encapsulating structure of a transparent material around a UV LED, particles of a UV-excitable phosphor dispersed in the transparent material. Alternatively, the transparent material also includes nanometer-sized particles of a UV-radiation scattering material.

A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.

A method for protecting data against power analysis attacks includes at least a first phase of executing a cryptographic operation for ciphering data in corresponding enciphered data through a secret key. The method includes at least a second phase of executing an additional cryptographic operation for ciphering additional data in corresponding enciphered additional data. An execution of the first and second phases is undistinguishable by the data power analysis attacks. Secret parameters are randomly generated and processed by the at least one second phase. The secret parameters include an additional secret key ERK for ciphering the additional data in the corresponding enciphered additional data.

A bone conduction hearing aid system for generating bone conduction vibrations is disclosed. The bone conduction hearing aid system has an external hearing aid unit with a vibrator and a skin contact pressure plate. The skin contact pressure plate is placed on an outside of the external hearing aid unit and the skin contact pressure plate is magnetically attached to an implanted unit anchored to the skull under the skin. The vibrator transforms an electrical signal into mechanical vibrations and the skin contact pressure plate allows transmission of the vibrations from the vibrator to the implanted unit when the external hearing aid unit is magnetically fixed to the implanted unit.

A method of slice selective multiple quantum magnetic resonance imaging of an object is disclosed. The method is effected by implementing the steps of (a) applying a radiofrequency pulse sequence selected so as to select a coherence of an order n to the object, wherein n is zero, a positive or a negative integer other than ±1; (b) applying magnetic gradient pulses, so as to select a slice of the object to be imaged arid to create an image; and (c) acquiring a radiofrequency signal resulting from the object, so as to generate a magnetic resonance slice image of the object. The method provides slice selective multiple quantum magnetic resonance images of yet unprecedented quality in terms of contrast. The method is particularly useful for imaging connective tissues.

Non-volatile memory devices and arrays are described that utilize dual gate (or back-side gate) non-volatile memory cells with band engineered gate-stacks that are placed above or below the channel region in front-side or back-side charge trapping gate-stack configurations in NAND memory array architectures. The band-gap engineered gate-stacks with asymmetric or direct tunnel barriers of the floating node memory cells of embodiments of the present invention allow for low voltage tunneling programming and efficient erase with electrons and holes, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The memory cell architecture also allows for improved high density memory devices or arrays with the utilization of reduced feature word lines and vertical select gates.

A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.