968 results about "Nitride semiconductors" patented technology

A vertical cavity light-emitting element includes a gallium-nitride-based semiconductor substrate, a first multilayer reflector on the substrate, a semiconductor structure layer that includes an active layer made of a nitride semiconductor, a second multilayer reflector that is on the semiconductor structure layer and constitutes a resonator between the first and second multilayer reflectors, and a current confinement structure formed between the first and second multilayer reflectors. The first multilayer reflector is made by an In-containing nitride semiconductor layer containing In in composition and an In-free nitride semiconductor layer including no In being alternately laminated. The current confinement structure concentrates a current in one region of the active layer. An uppermost layer of the first multilayer reflector is the In-containing nitride semiconductor layer, and a region along an upper surface of the In-containing nitride semiconductor layer of the uppermost layer has a higher hydrogen impurity concentration than other regions.

The present invention relates to a method for manufacturing a group 3 nitride semiconductor template and a semiconductor template manufactured thereby, wherein a laser lift-off technique and a chemical lift-off technique are used so that a high-quality group 3 nitride semiconductor layer can be formed on the top of a high heat dissipation support substrate having the same or a similar lattice constant and thermal expansion coefficient.

A nitride semiconductor device includes a semiconductor layered structure including a substrate, a channel layer, and a barrier layer. The channel layer is formed above the substrate and made of a nitride semiconductor layer. The barrier layer is formed on the channel layer, has a wider band gap than the channel layer, and is made of a nitride semiconductor layer. The semiconductor layered structure includes an isolation region in which impurities are implanted. The position of an impurity concentration peak in the depth direction in the isolation region is deeper than the interface between the barrier layer and the channel layer. The concentration of the impurities at the interface between the barrier layer and the channel layer in the isolation region is lower than the concentration at the impurity concentration peak.

A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode provided on the second insulating film between the first electrode and the first insulating film, and a fourth electrode including a first electrode portion and a second electrode portion, the first electrode portion being provided on the second insulating film between the third electrode and the first insulating film, and the second electrode portion being provided on the second insulating film on the first insulating film and being electrically connected to the first electrode portion.

A phosphor plate including: a complex containing an α-sialon phosphor and a sintered body containing spinel represented by a general formula M2xAl4-4xO6-4x (where M represents at least one of Mg, Mn, and Zn, and 0.2<x<0.6). In addition, there is provided a light emitting device including: a group III nitride semiconductor light emitting element; and the phosphor plate provided on one surface of the group III nitride semiconductor light emitting element. Further, there is provided a method for manufacturing the phosphor plate.

To provide a nitride semiconductor light-emitting element which emits ultraviolet light with improved luminous efficiency.SOLUTION: The light-emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer and also includes an electron blocking layer between the p-side semiconductor layer and the active layer. The active layer includes a first barrier layer containing Al, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer being in contact with the electron blocking layer, containing Al, and emitting ultraviolet light in order from the n-side semiconductor layer side. The Al composition ratio of the second well layer is higher than the Al composition ratio of the first well layer. The film thickness of the second well layer is smaller than the film thickness of the first well layer.SELECTED DRAWING: Figure 2

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

A nitride semiconductor device includes a nitride semiconductor layer including a first superlattice buffer layer, a second superlattice buffer layer formed above the first superlattice buffer layer, an electron transit layer formed above the second superlattice buffer layer and composed of a first nitride semiconductor, and an electron supply layer formed above the electron transit layer and composed of a second nitride semiconductor. The first superlattice buffer layer has a first superlattice structure including a first layer and a second layer alternately arranged. The first layer is composed of AlxGa1−xN, where 0<x<1. The second layer is composed of GaN. The second superlattice buffer layer has a second superlattice structure including a third layer and a fourth layer alternately arranged. The third layer is composed of AlyGa1−yN, where 0<y<x. The fourth layer is composed of GaN.

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.

A semiconductor device includes a substrate, a buffer layer over the substrate, an n-type electrode overlapping the buffer layer, and an electron injection layer in contact with the n-type electrode over the buffer layer. The electron injection layer includes an n-type dopant and a first nitride semiconductor containing gallium. The first nitride semiconductor further contains at least one element of aluminum and indium.

The invention discloses a nitride semiconductor laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a self-bound exciton polariton layer is arranged between the lower waveguide layer and the lower limiting layer. The self-bound exciton polariton layer comprises a first self-bound exciton polariton layer and a second self-bound exciton polariton layer. According to the invention, a topological monoclinic phase periodic ferroelectric domain is provided, strong out-of-plane spontaneous polarization is formed to induce self-bound exciton polaritons, free exciton bound energy is increased from less than 10 meV to more than 20 meV, a temperature threshold of laser exciton radiation is reduced, and exciton optical radiation can be realized at room temperature or higher temperature.

The nitride semiconductor blue laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and a topological photon electronic composite flat band layer is arranged between the lower limiting layer and the lower waveguide layer. The topological photon electron composite flat band layer has a refractive index coefficient distribution characteristic and a forbidden band width distribution characteristic. According to the invention, an electron energy band and a photon energy band form high-dimensional line degeneracy in a momentum space, the interaction intensity of free electrons and photons is enhanced, the phase mismatch of the free electrons and the photons is overcome, the radiation intensity of the free electrons is excited, the free electron coupling light quantum efficiency is improved, and full energy-momentum matched flat band resonance is realized. Laser far-field radiation is enhanced, and laser mode gain and optical power are improved.

The invention discloses a method for manufacturing a high-power nitride semiconductor microwave transistor on a gallium nitride substrate. The method mainly solves the problems that an existing device has a parasitic electric leakage channel at a homoepitaxial interface and is low in breakdown voltage. According to the scheme, the method comprises the following steps: firstly, selecting a p-type gallium nitride single-crystal substrate, carrying out surface pretreatment on the p-type gallium nitride single-crystal substrate to obtain a p-type gallium nitride single-crystal substrate containing a p-type AlN electric leakage isolation layer, and then sequentially growing a GaN channel layer, an AlN insertion layer and a barrier layer on the pretreated substrate; and finally, preparing an insulated gate dielectric layer and a gate electrode on the barrier layer, and manufacturing a source electrode and a drain electrode on two sides to complete device manufacturing. Through in-situ compensation of donor impurities based on the p-type AlN electric leakage isolation layer and ion implantation, complete isolation of a parasitic electric leakage channel at a homoepitaxial interface and a 2DEG conductive channel at a homoepitaxial GaN heterojunction interface is realized, transverse electric leakage of the device is effectively inhibited, and the voltage endurance capability and the output power of the device are improved.

The present invention relates to a method for manufacturing a Group III nitride semiconductor template and a Group III nitride semiconductor template manufactured thereby and, more specifically, to a method for manufacturing a Group III nitride semiconductor template and a Group III nitride semiconductor template manufactured thereby, wherein a seed layer is formed of a single-crystal metal oxide having a corundum crystal structure so that a high-quality Group III nitride semiconductor device active layer can be re-grown.

A new semiconductor structure is disclosed. The semiconductor structure includes patterned dielectric layers disposed between the field plates and the channel layer. These patterned dielectric layers serve to further shape the electric field in the channel layer. This structure is not only applicable to III-nitride semiconductor devices, such as transistors, diodes or any other devices, but also is applicable to other semiconductor devices, such as Si LDMOS, SiC transistors, GaAs transistors.

A nitride semiconductor device includes: an electron transit layer; an electron supply layer that is formed on the electron transit layer and that has a band gap which is larger than that of the electron transit layer; a dielectric layer that is formed on the electron supply layer; and an electrode that has a contact part which is in electrical contact with the electron supply layer via at least an opening passing through the dielectric layer. The contact part has: an inclined surface that is inclined so as to decrease in width toward the electron transit layer; a tip surface that is in contact with the bottom face of the opening; and a curved surface that is provided between the tip surface and the inclined surface and that is curved so as to protrude toward the electron transit layer.

The invention provides a nitride semiconductor laser with a light field regulation and control layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer; the first lower waveguide layer is located below the second lower waveguide layer, a first light field regulation and control layer is arranged between the first lower waveguide layer and the lower limiting layer, and a second light field regulation and control layer is arranged between the first lower waveguide layer and the second lower waveguide layer. The first lower waveguide layer, the second lower waveguide layer and the second light field regulation and control layer all have an In element concentration change trend, and the first light field regulation and control layer has an Al element concentration change trend. Refractive index dispersion of the laser can be inhibited, influence of concentration fluctuation of high-concentration carriers of the lower waveguide layer on refractive index change of the active layer and the lower waveguide layer is reduced, limiting factors of the laser are improved, and mode gain of the laser is enhanced.

To provide a technique of improving the efficiency of injecting holes into an active layer in a large-output nitride semiconductor light-emitting element which supplies large currents and emits light.SOLUTION: A nitride semiconductor light-emitting element 1 includes: a double quantum well active layer 13; a p-side AlGaN guide layer 14 laminated on a front surface side of the double quantum well active layer 13; and an electronic block layer 15 laminated on a front surface side of the p-side AlGaN guide layer 14. The p-side AlGaN guide layer 14 has a composition flat layer 14A in which an Al composition is the same in a lamination direction D and a composition inclination layer 14B in which the Al composition is inclined in the lamination direction D.SELECTED DRAWING: Figure 2

The invention relates to an enhanced nitride semiconductor transistor structure, which belongs to the technical field of semiconductors and comprises an epitaxial structure, the epitaxial structure comprises a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a cap layer on the barrier layer, and a source electrode, a grid electrode and a drain electrode of the transistor structure are manufactured on the surface of the epitaxial structure. A cap layer on the barrier layer includes a polarized doped p-type nitride semiconductor structure, and an n-type nitride semiconductor structure thereover. According to the enhanced nitride semiconductor transistor structure, the p-type polarization doping structure is arranged in the cap layer, so that higher ionization charge and hole concentration compared with impurity doping can be realized, two-dimensional electron gas in the channel layer can be effectively exhausted, and meanwhile, the memory effect when Mg is doped with p-type nitride is avoided; a pn structure with a good interface is formed between the P-type polarization doping layer and the n-type layer above the P-type polarization doping layer, a commonly-used metal semiconductor Schottky contact grid electrode is replaced, the withstand voltage of the grid electrode is improved, and electric leakage of the grid electrode is reduced.

A light emitting element includes, successively from a lower side to an upper side, a first light emitting part having a first active layer, a tunnel junction part, and a second light emitting part having a second active layer. The first active layer includes a plurality of first well layers, and a first barrier layer positioned between two adjacent first well layers among the first well layers. The second active layer includes a plurality of second well layers, and a second barrier layer positioned between two adjacent second well layers among the second well layers. The second barrier layer is a nitride semiconductor layer containing an n-type impurity and gallium, and has an n-type impurity concentration higher than that of the first barrier layer. An n-type impurity concentration peak in the second barrier layer is located on a first light emitting part side.

To provide a liquid dispensing device that can increase the frequency of the drive signal. [Solution] A capacitive load drive circuit that outputs a drive signal to displace a capacitive load comprises: an amplification circuit that outputs an amplified modulated signal by driving a first transistor that is driven in accordance with a first gate drive signal corresponding to a modulated signal obtained by modulating a base drive signal output by a modulation circuit, and a second transistor that is driven in accordance with a second gate drive signal corresponding to the modulated signal; and a demodulation circuit that outputs a drive signal obtained by demodulating the amplified modulated signal, wherein at least one of the first transistor and the second transistor comprises a first layer containing a first nitride semiconductor and a second layer containing a second nitride semiconductor having a larger band gap than the first nitride semiconductor, with the second layer positioned above the first layer, in a liquid dispensing device.

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

A nitride semiconductor layer includes a first layer, a second layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a connection part connected with a source electrode, and an extension part extending in a first direction through the nitride semiconductor layer from the connection part. The extension part is positioned between a first interface between the first layer and the second layer, and a second interface between a substrate and the nitride semiconductor layer. An end of the extension part is positioned between a position of an end of a gate electrode at a drain electrode side in the first direction and a position of an end of the drain electrode at the gate electrode side in the first direction.

The invention provides a nitride semiconductor laser. The laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top. And the lower waveguide layer comprises any one or a combination of more of InGaN, GaN, InN, AlInGaN, an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInN superlattice and an InGaN / AlInGaN superlattice. The peak rate electric field distribution of the lower waveguide layer has an arc distribution, and the peak rate electric field distribution has a curve distribution of a function y = logax (a > 1). The drift rate distribution of the saturated electrons of the lower waveguide layer has an arc-shaped distribution, and the drift rate distribution of the saturated electrons has a curve distribution of a third quadrant of a function y = x-b (b > 1, b is an odd number). The density distribution of valence band effective states of the lower waveguide layer has a curve distribution of a third quadrant of a function y = (cx + 1) / (cx-1) (c > 1).

[Task] A semiconductor laser element with reduced light loss is provided. [Solution] A semiconductor laser element emits ultraviolet light and includes an n-side cladding layer, an n-side guide layer, an active layer, a p-side guide layer, and a p-side cladding layer, each made of a nitride semiconductor, in this order upwards. The semiconductor laser element includes a first surface and a ridge portion protruding upwards from the first surface. The first surface is located at the top with respect to a lower end of the p-side guide layer and at the bottom with respect to an upper end of the p-side guide layer. A thickness of the n-side guide layer is thinner than a thickness of the n-side cladding layer. An Al composition ratio of the n-side guide layer is smaller than an Al composition ratio of the n-side cladding layer.a thickness of the p-side guide layer is thinner than a thickness of the p-side cladding layer and thinner than the thickness of the n-side guide layer, and an Al composition ratio of the p-side guide layer is smaller than an Al composition ratio of the p-side cladding layer.,

A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a <11-20> axis.

To provide a nitride semiconductor device, a method for manufacturing the nitride semiconductor device and an epitaxial substrate that can achieve both suppression of current collapse and high electron mobility.SOLUTION: A nitride semiconductor device comprises: a substrate; a buffer layer provided on the substrate; a channel layer provided on the buffer layer; a barrier layer provided on the channel layer; and a source electrode, a gate electrode and a drain electrode provided on the barrier layer. The channel layer includes: a first layer with a carbon concentration of 1×1017 cm-3 or higher; and a second layer provided on the first layer with a carbon concentration of 2×1016 cm-3 or lower. The thickness of the first layer is set to 20% or less of the thickness of the channel layer.SELECTED DRAWING: Figure 1

A semiconductor device, comprising, a semiconductor substrate, a III-N semiconductor layer over the semiconductor substrate, a contact pad on the III-N semiconductor layer, a first dielectric layer over the III-N semiconductor layer, a first metal contact through the first dielectric layer and contacting the contact pad, and a second metal contact, including a first side contacting the first dielectric layer and a second side contacting a second dielectric layer, and contacting the semiconductor substrate.

A new transistor structure for use with III-Nitride semiconductor structures is disclosed. The transistor includes heavily doped n++ layers located in the source region and the drain region. The source and drain electrodes are disposed on their respective heavily doped n++ layer. Further, in some embodiments, a portion of the gate electrode may be disposed on one or both of the heavily doped n++ regions. These regions improve the on-resistance of the transistor, especially for low voltage applications.

According to the nitride semiconductor device and the power device based on the nitride semiconductor material, grooves which are periodically arranged in the Z direction are formed in a nitride semiconductor layer between a grid electrode structure and a drain electrode contact hole, when the device is turned on, the current direction is the X direction, the current path area in the Y-Z plane is increased, and resistance can be reduced.