This invention relates to the field of electrovariable
emissivity structure technology, and particularly to an electrovariable
emissivity structure. An embodiment of this invention provides an electrovariable
emissivity structure comprising, along its thickness, a
reflective layer, an insulating layer, and a regulating layer. The
reflective layer reflects
infrared light and is made of materials including conductors and semiconductors. The regulating layer is made of materials including conductors or semiconductors with
infrared semi-transparent properties. The
reflective layer and the regulating layer are respectively connected to two electrodes of a power supply, and the
electrode voltages are adjustable. An optical
resonant cavity structure is formed between the regulating layer and the reflective layer. The optical
resonant cavity is used to regulate the absorption of
infrared light. By adjusting the
voltage of the power supply, the infrared
transmittance and absorptivity of the regulating layer are changed, thereby adjusting the amount of infrared light entering the optical
resonant cavity structure, and thus regulating the infrared emissivity of the electrovariable emissivity structure. This embodiment of the invention provides an electrovariable emissivity structure capable of providing an adjustable emissivity structure for the infrared band.