1059 results about "Optical cavity" patented technology

A first lighting device comprises at least one plural cavity element and a plurality of solid state light emitters. A second lighting device comprises at least one plural cavity element, a plurality of solid state light emitters and at least one encapsulant region, at least a portion of the plural cavity element being surrounded by the encapsulant region. Each plural cavity element has at least two optical cavities. Each optical cavity comprises a concave region in the plural cavity element. At least one solid state light emitter is present in each of at least two of the optical cavities.

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.

This semiconductor light emitting device includes an optical cavity made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and including a pair of cavity end faces parallel to c-planes, and a reflecting portion made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and having a reflective facet opposed to one of the pair of cavity end faces and inclined with respect to a normal of the major growth surface. The optical cavity and the reflecting portion may be crystal-grown from the major surface of the substrate. The substrate is preferably a group III nitride semiconductor substrate having a major surface defined by a nonpolar plane.

An electronic device of an embodiment of the invention is for at least partially displaying a pixel of a displayable image. The electronic device includes a first reflector and a second reflector that define an optical cavity therebetween, and which is selective of a visible wavelength at an intensity by optical interference. The electronic device also includes a charge-controlling mechanism to allow optical properties of the optical cavity to be varied by controlling a predetermined amount of charge stored on the first and the second reflectors. The visible wavelength and/or the intensity are thus variably selectable in correspondence with the pixel of the displayable image.

A structure is provided that includes an aperiodic dielectric stack. The structure may include a substrate, a device disposed over the substrate, and a first dielectric stack disposed between the substrate and the device. The first dielectric stack includes a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, as well as a plurality of layers comprising a second dielectric material. The average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The substrate may have a treated surface such that light that may otherwise be waveguided in the substrate is outcoupled into air, and the average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 10% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. The structure may include an optical cavity defined by a first end layer and a second end layer, where the first end layer further comprising a first dielectric stack having a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, and a plurality of layers comprising a second dielectric material. An optoelectronic device having a first active layer may be disposed within the optical cavity.

The present invention relates to optical heterodyne detection cavity ringdown spectroscopy. In one aspect the invention relates to an optical system (1) comprising a ring-down cavity cell (3) defining a resonant optical cavity, means for directing coherent light selected from the group consisting of continuous or quasi-continuous light into said optical cavity (8, 9, 10, 11, and 12), means for altering the resonant optical cavity so as to generate a frequency shift of the coherent light in the optical cavity (6, 7), means for coupling said coherent light into the optical cavity and means for decoupling the frequency shifted coherent light out of said optical cavity (5, 6, 7), means for optically combining (10, 11, 12) said decoupled frequency shifted coherent light with another portion of coherent light not in optical communication with the optical cavity and means for optical heterodyne detection (13) of the intensity of said combined light. A method for optical detection is also described as well as methods and apparatus for detecting a parameter of a sample.

A novel class of optoelectronic devices incorporate an interference filter. The filter includes at least two optical cavities. Each of the cavities localizes al least one optical mode. The optical modes localized at two cavities are at resonance only at one or at a few discrete selective wavelengths. At resonance, the optical eigenmodes contain one mode having a zero intensity at a node position between the two cavities, where this position shifts as a function of the wavelength. A non-transparent element, which is preferably an absorbing element, a scatterer, or a reflector, is placed between two cavities. At a discrete selective wavelength, when the node of the optical mode matches with the non-transparent element, the filter is transparent for light. At other wavelengths, the filter is not transparent for light. This allows for the construction of various optoelectronic devices showing a strongly wavelength-selective operation.

An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.

Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

Improved apparatus and methods for spatial light modulation are disclosed which utilize optical cavities having both front and rear reflective surfaces. Light-transmissive regions are formed in the front reflective surface for spatially modulating light.

A frequency swept laser source for TEFD-OCT imaging includes an integrated clock subsystem on the optical bench with the laser source. The clock subsystem generates frequency clock signals as the optical signal is tuned over the scan band. Preferably the laser source further includes a cavity extender in its optical cavity between a tunable filter and gain medium to increase an optical distance between the tunable filter and the gain medium in order to control the location of laser intensity pattern noise. The laser also include a fiber stub that allows for control over the cavity length while also controlling birefringence in the cavity.

A desired pattern may be cut into a stent preform by impinging a laser beam onto the stent preform. The laser beam is formed using a laser system comprising a resonator cavity for resonating laser radiation, a gain medium contained in the resonator cavity, a pump for periodically pumping the gain medium and an electro-optical modulator in communication with the resonator cavity. The laser system produces a radiation pulse for each pump period. Each radiation pulse is conditioned by suppressing at least a portion of the pulse. The pulse may also be modulated with an electro-optical modulator to produce a pulse train of ordered pulses of radiation. Each pulse train is output from the optical cavity as an output laser beam which is directed at the stent preform to cut a desired pattern in the stent preform.

An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

A method for analyzing gas concentration using doubly resonant photoacoustic spectroscopy, and a doubly resonant photaoacoustic gas detector comprising: i) a continuous wave light beam whose wavelength coincides with an absorption wavelength of a gaseous analyte; ii) a closed path optical cavity having at least two reflective surfaces; iii) an acoustic resonator chamber contained within said optical cavity, and comprising an acoustic sensor for detecting sound waves generated by a gaseous analyte present within said chamber, the light beam passing sequentially into, through and out of said chamber, and being repeatedly reflected back and forth through said chamber, and being modulated at a frequency which is equal to or equal to one-half of an acoustic resonance frequency of said acoustic resonator chamber.

A light-emitting optical cavity light-emitting diode device, comprising:

• • a) a substrate;
  • b) a reflective electrode formed over the substrate;
  • c) an unpatterned light-emitting layer formed over the reflective electrode;
  • d) a transparent electrode formed over the unpatterned light-emitting layer;
  • e) one or more different optical spacers, defining at least two different optical path lengths, are formed in different locations over the substrate, between the reflective electrode and the transparent electrode; and
  • f) a low-index layer formed over the transparent electrode.

An apparatus, method and system that uses a Q-switched laser or a Q-seed source for a seed pulse signal having a controlled high-dynamic-range amplitude that avoids and/or compensates for pulse steepening in high-gain optical-fiber and/or optical-rod amplification of optical pulses. Optionally, the optical output is used for LIDAR or illumination purposes (e.g., for image acquisition). In some embodiments, well-controlled pulse shapes are obtained having a wide dynamic range, long duration, and not-too-narrow linewidth. In some embodiments, upon the opening of a Q-switch in an optical cavity having a gain medium, the amplification builds relatively slowly, wherein each round trip through the gain medium increases the amplitude of the optical pulse. Other embodiments use quasi-Q-switch devices or a plurality of amplitude modulators to obtain Q-seed pulses. These configurations provide optical pulses having wide dynamic ranges that ameliorate problems of pulse steepening, non-linear spectral broadening and the like in very-high-power MOPA devices.

The invention belongs to the technical field of gas detection and relates to a laser infrared gas analyzer based on TDLAS-WMS (tunable diode laser absorption spectroscopy-wavelength modulation spectroscopy) for detecting hydrogen chloride, methane, carbon monoxide, water vapor and other gases. The laser infrared gas analyzer comprises a laser, a laser driving circuit, a temperature control circuit, an optical system with an optical cavity, a main detector, a reference detector, an intensity modulation and canceling circuit, a phase-locking and amplification circuit and a data acquisition and display circuit, wherein the laser driving circuit and the temperature control circuit are used for controlling the laser to emit light, the two ends of the optical system are respectively connected with the laser and the detector, the intensity modulation and canceling circuit is used for canceling the influence of intensity modulation in the system, the phase-locking and amplification circuit is used for extracting harmonic signals, and the data acquisition and display circuit is used for displaying the concentration of the gas to be detected. Compared with other detection instruments, the laser infrared gas analyzer has the advantages that division operation is introduced into the intensity modulation and canceling circuit, and the laser infrared gas analyzer is combined with a space double-optical path differential detection method, so that the influence of the intensity modulation can be fundamentally canceled.

A process for measuring the absorption spectrum of a target analyte using a cavity ring down spectrometer, comprising the steps of: i) tuning the spectrometer laser so that the light transmitted from the laser into the spectrometer optical cavity is varied over a wavelength interval which encompasses both the absorption wavelength of a spectral feature of the target analyte and a plurality of the free spectral ranges of the optical cavity; ii) triggering a plurality of ringdown events; iii) for each ringdown event, recording the decay time constant and the trigger time at which the light into the cavity is shut off; iv) organizing the decay time constants, light wavelengths and trigger times as a function of trigger time; v) ordering said light wavelengths by increasing value and placing groups of wavelengths into individual bins; vi) computing the average wavelength of each bin group; vii) grouping the decay time constants and trigger times into bins that parallel said wavelength bins, with the decay time constants in each of said parallel bin being arranged by increasing trigger time; viii) computing the average decay time for each decay time bin and using this decay time average, together with the average wavelength from the parallel wavelength bin, to compute the optical loss for the target analyte at said average wavelength.

A thin-film, white-light-emitting diode device includes a reflective, conductive thin-film structure and a semi-transparent, conductive thin-film structure. One or more thin-film layers are formed between the reflective and semi-transparent conductive thin-film structures to form two or more commonly-controlled microcavity structures. The thin-film layers emit white light in response to current provided by the conductive thin-film structure. Each of the two or more commonly-controlled microcavity structures has a different resonant frequency within one or more optical cavities and emits light with a smaller spectral range than the spectral range of the white-light-emitting thin-film layer(s). A combination of light emitted from the two or more commonly-controlled microcavity structures is white.

An optical parametric oscillator (OPO) is described that efficiently converts a near-infrared laser beam to tunable mid-infrared wavelength output. In some embodiments, the OPO includes an optical resonator containing a nonlinear crystal, such as periodically-poled lithium niobate. The OPO is pumped by a continuous-wave fiber-laser source having a low-power oscillator and a high-power amplifier, or using just a power oscillator). The fiber oscillator produces a single-frequency output defined by a distributed-feedback (DFB) structure of the fiber. The DFB-fiber-laser output is amplified to a pump level consistent with exceeding an oscillation threshold in the OPO in which only one of two generated waves (“signal” and “idler”) is resonant within the optical cavity. This pump source provides the capability to tune the DFB fiber laser by straining the fiber (using an attached piezoelectric element or by other means) that allows the OPO to be continuously tuned over substantial ranges, enabling rapid, wide continuous tuning of the OPO output frequency or frequencies.

A system for reducing reflection of an optical system can reduce or eliminate reflection at facets of a semiconductor gain medium and can suppress natural longitudinal modes produced within the semiconductor gain medium. In combination with external feedback, the system can allow more precise wavelength control of the light output of a laser, thereby allowing the laser to be used in a dense wavelength division multiplexing system. The system employs a patterned relief surface disposed on a facet of a gain medium. The patterned relief surface may be a "motheye" pattern having a plurality of conical posts disposed on the surface of the facet. The system may be combined with conventional devices, such as a Bragg reflector or a microelectromechanical component, to further improve wavelength control of a resonant optical cavity, thereby improving the operation of optical communications systems.

A white light-emitting microcavity light-emitting diode device, comprising:

• • a) A reflective electrode and a semi-transparent electrode formed over a substrate and an unpatterned white-light-emitting layer formed between the reflective electrode and the semi-transparent electrode, the reflective electrode, semi-transparent electrode, and unpatterned white-light-emitting layer forming an optical cavity. Either the reflective or semi-transparent electrode is patterned to form independently-controllable light-emitting sub-pixel elements.
  • b) Color filters are formed over a side of the semi-transparent electrodes opposite the unpatterned white light-emitting-layer in correspondence with the independently-controllable light-emitting elements to form colored sub-pixels. At least one independently-controllable light-emitting element has at least two commonly-controlled portions that together emit substantially white light to form a white sub-pixel.
  • c) The optical cavity of one or more of the commonly-controlled portions of the white sub-pixel comprises optical microcavities tuned to emit light at a different complementary wavelength at an emission angle.