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90 results about "Optical transition" patented technology

Nanophotonic devices based on quantum systems embedded in frequency bandgap media

The present invention describes nanophotonic materials and devices for both classical and quantum optical signal processing, transmission, amplification, and generation of light, which are based on a set of quantum systems having a discrete energy levels, such as atoms, molecules, or quantum dots, embedded in a frequency bandgap medium, such as artificial photonic crystals (photonic bandgap materials) or natural frequency dispersive media, such as ionic crystals, molecular crystals, or semiconductors, exhibiting a frequency (photonic) bandgap for propagating electromagnetic modes coupled to optical transitions in the quantum systems. If the frequency of one of optical transitions, called the working transition, lies inside the frequency bandgap of the medium, then spontaneous decay of the working transition into propagating photon modes is completely suppressed. Moreover, the excitation of the working transition and a photon form a photon-quantum system bound state lying inside the photonic bandgap of the medium, in which radiation is localized in the vicinity of the quantum system. In a quantum system “wire” or a quantum system “waveguide”, made of spatially disordered quantum systems, or in a chain quantum system waveguide made of a periodically ordered identical quantum systems, wave functions of the photon-quantum system bound states localized on different quantum systems overlap each other and develop a photonic passband lying inside bandgap of the photonic bandgap medium.
Owner:ALTAIR CENT

Optical transition layer material, optical substrate/packaging layer, OLED (Organic Light Emitting Diode) and manufacturing methods thereof

The invention relates to an organic electroluminescent technology and discloses a method for improving the luminous efficiency. The method can be applied to various types of OLED (Organic Light Emitting Diode) devices of bottom emission, top emission, transparency and the like. The invention provides an optical transition layer material, an optical substrate (packaging layer), an OLED, and manufacturing methods thereof. If the OLED is the bottom-emission OLED, an optical transition layer is manufactured on the substrate; if the OLED is the top-emission OLED, the optical transition layer is manufactured on the packaging layer; and if the OLED is the transparent OLED, the optical transition layer can be independently or simultaneously manufactured on the substrate or the packaging layer. An organic material main body with high light transmittance and moderate refractive index and an inorganic nano grain with the high light transmittance and low absorption rate are selected; the inorganic nano grain is used as a scattering medium to be scattered into the organic material main body to prepare the optical transition layer material; and the optical transition layer material is used for preparing an optical transition layer on the substrate (packaging layer) including glass and the like, so that the full-reflection loss of emergent light is effectively reduced and the luminous efficiency of the OLED is improved by 20-50%.
Owner:TRULY SEMICON

Anti Stark Electrooptic Medium and Electrooptically Modulated Optoelectronic Device Based Thereupon

ActiveUS20090041464A1Increase overlapIncrease oscillator strengthWavelength-division multiplex systemsSolid-state devicesHeterojunctionOscillator strength
Semiconductor electrooptic medium shows behavior different from a medium based on quantum confined Stark Effect. A preferred embodiment has a type-II heterojunction, selected such, that, in zero electric field, an electron and a hole are localized on the opposite sides of the heterojunction having a negligible or very small overlap of the wave functions, and correspondingly, a zero or a very small exciton oscillator strength. Applying an electric field results in squeezing of the wave functions to the heterojunction which strongly increases the overlap of the electron and the hole wave functions, resulting in a strong increase of the exciton oscillator strength. Another embodiment of the novel electrooptic medium includes a heterojunction between a layer and a superlattice, wherein an electron and a hole in the zero electric field are localized on the opposite sides of the heterojunction, the latter being effectively a type-II heterojunction. Yet another embodiment has a heterojunction between two superlattices, wherein an electron and a hole in a zero electric field are localized on the opposite sides of the heterojunction, the latter operating effectively as a type-II heterojunction. A further embodiment has an ultrathin quantum well layer confined by barrier layers, having an essentially different barrier heights and a thick layer, wherein, in a zero electric field, a charged particle of one sign having a large effective mass is localized in this ultrathin layer, and a particle having a different sign of the charge, having a small effective mass is not localized in this ultrathin layer, but is localized mainly in the neighboring thick layer. Thus, the heterojunction between the two layers operates effectively as a type-II heterojunction. Applying an electric field to all types of the electrooptic medium of the present invention results in a dramatic increase of the exciton oscillator strength and, therefore, in a large positive refractive index change at the photon energies below the exciton absorption peak. A very strong increase in the optical transition photon energy can be achieved, when necessary.
Owner:CONNECTOR OPTICS
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