402results about How to "Improve light extraction efficiency" patented technology

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer. The buffer layer sequentially comprises a first AlN layer, a second AlN layer, a third AlN layer, a first superlattice layer, a first AlGaN layer, a second superlattice layer and a first GaN layer; the first superlattice layer comprises a fourth AlN layer and a second AlGaN layer which are alternately stacked, and the second superlattice layer comprises a third AlGaN layer and a second GaN layer which are alternately stacked; a first V-shaped pit extending to the second superlattice layer is formed in the third AlN layer, a second V-shaped pit is formed in the first superlattice layer, and the second V-shaped pit is filled and leveled up by the first AlGaN layer; the second superlattice layer forms a third V-shaped pit, and the first V-shaped pit and the third V-shaped pit are filled and leveled up by the first GaN layer. By implementing the invention, the luminous efficiency can be improved.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an intrinsic semiconductor layer, an N-type semiconductor layer, a multi-quantum well layer, an electron blocking layer and a P-type semiconductor layer. The P-type semiconductor layer comprises a Si3N4 layer, a first superlattice layer and a second superlattice layer which are sequentially stacked on the electron blocking layer, the first superlattice layer comprises a Mg-doped Al < x > Ga < 1-x > N layer and a Mg-doped GaN layer which are alternately stacked, and the second superlattice layer comprises a non-doped GaN layer and a Mg-doped In < y > Ga < 1-y > N layer which are alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The invention discloses an organic / inorganic hybrid high-refractive-index carbonized polymer dot film layer and a preparation method thereof, and belongs to the technical field of preparation of high-refractive-index nanoparticles. The preparation method comprises the following steps: firstly, preparing CPDs with a high refractive index by a solvothermal method, and then dissolving the CPDs in a solvent uniformly to obtain a film layer curing liquid; and coating a base material with the mixture, and carrying out thermocuring to prepare the high-refractive-index carbonized polymer dot film layer. The prepared high-refractive-index carbonized polymer dot film layer is high in refractive index and easy and convenient to form and process, an antireflection coating can be prepared by preparing film layers with different refractive index gradients, the visible light transmittance of a base material is increased, and the high-refractive-index carbonized polymer dot film layer can be applied to improving the light extraction efficiency of an OLED. Or the high-refractive-index carbonized polymer dot film layer and the low-refractive-index polymer are laminated to prepare the Bragg reflector, the high reflectivity of light of a specific wave band is achieved by controlling the thickness of the laminated layer, and the Bragg reflector can be applied to a colorful structural color anti-counterfeiting coating.

The invention provides a fluorene-containing amine compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials. The fluorene-containing amine compound disclosed by the invention has relatively high hole transport capacity and proper HOMO energy level, and when the fluorene-containing amine compound is applied to a hole transport layer or an electron blocking layer of an organic electroluminescent device, the luminous efficiency of the device is effectively improved, and the service life of the device is effectively prolonged; the fluorene-containing amine compound provided by the invention has a relatively high refractive index, and when the fluorene-containing amine compound is applied to a covering layer of the organic electroluminescent device, the luminous efficiency is effectively improved, so that the luminous efficiency of the organic electroluminescent device is further improved, and the service life of the organic electroluminescent device is further prolonged. In conclusion, the fluorene-containing amine compound provided by the invention can be widely applied to the fields of panel display, illumination light sources and the like, and has a good application prospect.

The utility model relates to the technical field of COB light sources, and particularly discloses a constant-voltage normally-installed single-color COB which comprises a COB substrate, a light source installation groove and a plurality of constant-voltage IC chip installation grooves communicated with the light source installation groove are formed in the COB substrate, a plurality of light-emitting lamp wick sets are arranged on the light source installation groove, and the light-emitting lamp wick sets are arranged on the COB substrate. A constant-voltage IC chip is arranged on the constant-voltage IC chip mounting groove, a light-proof silica gel layer is coated above the constant-voltage IC chip mounting groove, a plurality of power supply bonding pads are arranged at the diagonal positions of the COB substrate, and the constant-voltage IC chip is electrically connected with the light-emitting lamp wick and the power supply bonding pads respectively. According to the utility model, the constant-voltage IC chip is installed by arranging the constant-voltage IC chip installation groove, and the light-shielding silica gel layer is coated above the constant-voltage IC chip installation groove, so that a plurality of grooves are not required to be formed, a lamp wick and a constant-voltage device can be reasonably arranged, the space of the COB substrate is fully utilized, the production efficiency is improved, and the light-shielding effect of the constant-voltage IC chip can be improved; the light shielding effect is good, and the light emitting efficiency is high.

The invention discloses a display panel and a display device, relates to the technical field of display, and can improve the light emitting efficiency of a light emitting device. The display panel comprises a driving substrate and a light-emitting device layer, the light-emitting device layer is arranged on one side of the driving substrate, the driving substrate comprises a pixel circuit, and the light-emitting device layer comprises a plurality of light-emitting devices; the light-emitting device comprises a first electrode, a light-emitting layer, a pixel defining layer and a second electrode, the pixel defining layer covers the edge of the first electrode, the pixel defining layer comprises a plurality of pixel openings, the light-emitting layer is arranged in the pixel openings, the light-emitting layer is arranged between the first electrode and the second electrode, and the first electrode is electrically connected with the pixel circuit; the light-emitting device layer comprises a reflection structure, the reflection structure is provided with at least two reflection surfaces, the at least two reflection surfaces belong to different planes, and the extension surfaces of the reflection surfaces intersect with the driving substrate; the reflection structure is arranged on the inner wall of the pixel opening, or the reflection structure is embedded in the pixel defining layer.

The invention provides a display panel and a display device. The display panel comprises an array substrate; the pixel limiting layer is arranged on the array substrate and defines pixel openings; the display layer comprises a light-emitting unit, and at least part of the light-emitting unit is exposed through the pixel opening; the packaging layer covers the pixel limiting layer and the display layer; the packaging layer comprises a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer which are stacked in sequence; the organic packaging layer is located on the side, away from the array substrate, of the first inorganic packaging layer; the light extraction structure is arranged between the first inorganic packaging layer and the organic packaging layer and is used for improving the light extraction efficiency; and the orthographic projection of the light extraction structure on the array substrate and the orthographic projection of the pixel opening on the array substrate at least partially coincide. The light emitting efficiency of the display panel is high. And the thickness of the organic packaging layer can be correspondingly reduced, and the method can be applied to ultra-thin display.

The invention relates to the technical field of optical lenses, and discloses an N-in-one free-form surface street lamp lens design method convenient for operation, maintenance, management and maintenance and a lens, the method comprises the following steps: determining an illumination demand of a target illumination scene, and generating first illumination demand data; obtaining historical lens design parameters and historical lighting effect data of a plurality of LED street lamp lighting projects, and generating second historical optimization data; based on the second historical optimization data, establishing a mapping model between the free-form surface parameters and the illumination effect through a machine learning algorithm; an initial free-form surface is generated, region division and optimization are carried out, and finally an optimized lens scheme is obtained; the lens comprises three sub-areas, namely a central area, a transition area and an edge area, a final design scheme is generated through simulation verification and test optimization; according to the LED street lamp lens, efficient and accurate LED street lamp lens design is achieved, the illumination uniformity and the visual comfort degree are improved, plane light emitting is adopted, and follow-up operation, maintenance and management are facilitated.

The utility model relates to the technical field of COB light sources, and particularly discloses a constant-voltage front-mounted double-color COB, which comprises a COB substrate, a light source mounting groove and a plurality of constant-voltage IC chip mounting grooves communicated with the light source mounting groove are arranged on the COB substrate, a plurality of warm light chips and cold light chips are arranged on the light source mounting groove, and the constant-voltage IC chip mounting grooves are communicated with the light source mounting groove. A constant-voltage IC chip is arranged on the constant-voltage IC chip mounting groove, a light-shielding silica gel layer is coated above the constant-voltage IC chip mounting groove, a plurality of power supply bonding pads are arranged at the diagonal positions of the COB substrate, and the constant-voltage IC chip is electrically connected with the warm light chip, the cold light chip and the power supply bonding pads respectively. The constant-voltage IC chip is installed by arranging the constant-voltage IC chip installation groove, a lampwick and a constant-voltage device can be reasonably arranged, the space is fully utilized, uniform light emitting is achieved, the light shielding effect is good, the light emitting efficiency is high, and the application range is wide.

The invention discloses a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate comprises a substrate body, a light-emitting device layer and a pixel limiting layer which are located on the substrate body, and a packaging structure layer located on the side, away from the substrate body, of the light-emitting device layer. The light emitting device layer includes a first light emitting unit and a second light emitting unit. The pixel defining layer includes a first pixel opening, a second pixel opening, a first defining portion for defining the first pixel opening, and a second defining portion for defining the second pixel opening. The height of the first limiting part is larger than that of the second limiting part, the first light-emitting units are located in the first pixel openings, and the second light-emitting units are located in the second pixel openings. The packaging structure layer comprises a first packaging part corresponding to the first light-emitting unit and a second packaging part corresponding to the second light-emitting unit, the first packaging part comprises scattering particles, and the second packaging part comprises quantum dots and scattering particles. The light emitting efficiency of the display substrate can be improved.

The invention provides an LED chip and a manufacturing method thereof. The LED chip comprises a substrate; the first type semiconductor layer, the active layer, the second type semiconductor layer, the first passivation layer, the reflecting layer and the second passivation layer are arranged on the surface of one side of the substrate and are sequentially arranged in the first direction; the first direction is perpendicular to the substrate and points to the active layer from the substrate; a plurality of grooves arranged in an array are formed in one side, close to the first passivation layer, of the reflecting layer, the opening of each groove faces the first passivation layer, and the groove wall of each groove is a curved surface, so that light entering the grooves is shaped and collected and then is reflected to the light emitting surface; a first electrode electrically connected to the first type semiconductor layer; and a second electrode electrically connected with the second type semiconductor layer. According to the LED chip, the incident angle of light on the light emitting surface of the LED chip can be reduced, so that the probability that the light is totally reflected is reduced, and the light extraction efficiency is improved.

The embodiment of the invention provides a display panel and a display device. The display panel comprises a substrate, a light-emitting functional layer and a driving circuit layer, the light-emitting functional layer is arranged on one side of the substrate; comprising a plurality of peep-proof sub-pixels and a plurality of shared sub-pixels; the peep-proof sub-pixel comprises a peep-proof light-emitting unit; the shared sub-pixel comprises a shared light-emitting unit; the distance between at least part of each shared light-emitting unit and the substrate is greater than the distance between the peep-proof light-emitting unit and the substrate; the driving circuit layer is arranged between the substrate and the light-emitting functional layer and comprises a peep-proof driving circuit and a shared driving circuit; the peep-proof driving circuit is used for driving the peep-proof sub-pixels, and the shared driving circuit is used for driving the shared sub-pixels. The display panel provided by the embodiment of the invention can be switched between the peep-proof mode and the sharing mode, so that a co-driver screen is visible to a main driver and a co-driver at the same time, and the visible mode (sharing mode) of the main driver and the invisible mode (peep-proof mode) can be freely switched.

The invention relates to the technical field of backlight display equipment, and provides a CSP backlight source double-layer packaging structure and a processing method thereof, and the CSP backlight source double-layer packaging structure comprises a substrate which is provided with a light-emitting circuit; the CSP comprises a packaging structure and a light-emitting chip arranged in the packaging structure, the light-emitting chip is arranged on the substrate and electrically connected with the light-emitting circuit, and the light-emitting chip is a Mini LED; the packaging adhesive layer comprises a first adhesive layer and a second adhesive layer, the first adhesive layer is connected to the substrate in a sealed mode and wraps the CSP package, a first gap is formed between the first adhesive layer and the CSP package, the second adhesive layer is connected to the substrate, and the first gap is filled with the second adhesive layer and sealed by the second adhesive layer; the first glue layer and the second glue layer are transparent shells formed through glue dispensing and curing of a glue dispenser. According to the CSP backlight source double-layer packaging structure, air gaps between the first adhesive layer and the CSP packaging and between the first adhesive layer and the second adhesive layer can be eliminated, meanwhile, the risk that the CSP backlight source is eroded by water vapor is eliminated, and the effect of improving the light emitting quality of the CSP backlight source is achieved.

The invention provides a vertically stacked LED chip structure and a manufacturing method thereof. The vertically stacked LED chip structure comprises a substrate, a first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only comprises the first epitaxial light-emitting structure, a third epitaxial light emitting structure; the third epitaxial light-emitting structure internally comprises a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially stacked on the substrate along a direction far away from the substrate; the first reflecting mirror layer is formed between the substrate and the color conversion layer and used for reflecting light emitted by the third epitaxial light-emitting structure to the light-emitting face of the vertically-stacked LED chip structure, and the problem that vertically-stacked LED chips are low in light-emitting rate is solved through the technical scheme.

The invention provides a display device and a preparation method thereof, and belongs to the technical field of semiconductors. The display device comprises a driving back plate, an insulating reflecting layer, an electrode layer and a plurality of pixel units, the plurality of pixel units are respectively bonded on the driving backboard, the plurality of pixel units are arranged at intervals, each pixel unit comprises an epitaxial layer and a passivation layer, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and the passivation layer covers the side surface of the epitaxial layer; the insulating reflecting layer covers one side, far away from the epitaxial layer, of the passivation layer, and a groove is formed between every two adjacent pixel units; the electrode layer is located in the groove. According to the invention, the problem of low occupation ratio of small-angle light extraction efficiency of a single pixel unit can be effectively solved.

The invention relates to the technical field of LED epitaxial wafers, and discloses a GaN-based LED epitaxial wafer and a preparation method thereof, and the GaN-based LED epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer, and a P-type semiconductor layer. Wherein the N-type semiconductor layer sequentially comprises a first porous low-temperature GaN layer, a second porous AlGaN / GaN superlattice layer, a third high-temperature GaN layer, a fourth porous AlGaN / GaN superlattice layer and a fifth high-temperature GaN layer. By adopting the invention, the generation of defects in the growth process of the epitaxial material can be reduced, the dislocation density of the material is reduced, and the quality of the epitaxial wafer material is remarkably improved, so that the radiation recombination efficiency in the active region of the light-emitting diode is improved, and meanwhile, the proportion of the photon escape body material in the active region can be remarkably improved.

The invention belongs to the technical field of Micro-LEDs, and relates to a Micro-LED with a collimation metasurface structure and a preparation method of the Micro-LED. The Micro-LED comprises a Micro-LED light emitting structure and a collimation metasurface structure, wherein the collimation metasurface structure is arranged on the Micro-LED light emitting structure The collimation metasurface structure is arranged on one side of a light-emitting surface of the Micro-LED light-emitting structure and is used for carrying out collimation filtering on light emitted by the Micro-LED light-emitting structure, so that the angle of the emergent light of the Micro-LED is smaller than a set angle; wherein the collimation metasurface structure comprises a first dielectric layer and a second dielectric layer, the first dielectric layer is arranged on the Micro-LED light-emitting structure, the first dielectric layer comprises a plurality of first collimation cylinders, and a groove is formed between every two adjacent first collimation cylinders; the second dielectric layer is arranged at the bottom of the groove and the top of the first collimation cylinder; the refractive index of the first dielectric layer is smaller than that of the second dielectric layer. By adopting the scheme, the intensity and transmissivity of normal incident light can be improved, the intensity and transmissivity of oblique incident light can be reduced, the collimation effect of light can be realized, and the luminous efficiency can be improved.

The utility model discloses a flexible lamp strip capable of emitting light from the side face. The flexible lamp strip comprises a lower heat dissipation frame, an upper heat dissipation frame and a fixing groove. A placement cavity is formed in the surface of the lower heat dissipation frame, and an inner shell is arranged in the placement cavity; the upper heat dissipation frame is arranged at the top of the inner shell, and a light emitting flat plate is connected between the lower heat dissipation frame and the upper heat dissipation frame in a sliding mode; the lamp strip substrate with the LED lamp beads is placed in the fixing groove in the inner shell, the inner shell is placed between the lower heat dissipation frame and the upper heat dissipation frame, the light-emitting flat plate is connected between the lower heat dissipation frame and the upper heat dissipation frame in a sliding mode, installation of the light-emitting flat plate is completed, the countersunk screws are screwed in respectively, and the light-emitting flat plate is fixed through the fixing groove. One end of the countersunk head screw enters the lower heat dissipation frame and the upper heat dissipation frame, so that the light emitting flat plate can be fixed; light emitted by the LED lamp beads is refracted through the tooth-shaped stripes, so that the light-emitting angle of the LED lamp beads is wider, the light-emitting flat plate is used in a matched mode, light emitted by the lamp strip is more uniform, and the light-emitting efficiency of the LED lamp strip is effectively improved.

The embodiment of the invention discloses a display module, a preparation method and electronic equipment. The display module comprises a substrate and a plurality of light-emitting sub-pixels arranged on the substrate. Each light-emitting sub-pixel comprises a first electrode layer, an insulating mask plate, a light-emitting layer and a second electrode layer, the first electrode layer, the insulating mask plate and the second electrode layer are sequentially stacked in the direction away from the substrate; the light-emitting layer comprises light-emitting materials, the insulating mask plate comprises a plurality of pixelated through holes, and the light-emitting materials are respectively arranged in the plurality of pixelated through holes; the plurality of pixelated through holes are in one-to-one correspondence with the plurality of light-emitting sub-pixels; the aperture of the plurality of pixelated through holes is 10 nm to 5 [mu] m. Therefore, the sizes of the pixelated through holes are micron-scale and submicron-scale, so that the nano-scale to micron-scale pixelated display is realized, and the pixel density required by near-eye display equipment is realized. And the insulating mask plate separates the luminescent material, so that the safety and the working efficiency of the display module are improved.

The invention relates to the technical field of illumination, and discloses a laser chip packaging material and a preparation method and application thereof. The laser chip packaging material comprises the following raw materials in parts by weight: 40-60 parts of powder, 0.2-0.3 part of a sintering modifier, 7-8 parts of a sintering aid, 15-25 parts of a binder, 20-30 parts of deionized water, 1-2 parts of a dispersant, 0.6-1.2 parts of a plasticizer and 0.2-0.6 part of a defoaming agent, wherein the powder material is prepared from aluminum oxide hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2. The aluminum oxide hollow sphere is matched with the component with the fluorescence effect, the color of light can be adjusted, the emitting angle of the light can be adjusted, the light emitting efficiency is effectively improved, and the laser chip can work under the high-power condition and can be well applied to the fields of high-pole illumination and the like.

The embodiment of the utility model provides a display panel and a display device.The display panel comprises a substrate and a flat layer, and the side, away from the substrate, of the flat layer comprises grooves and protrusions which are periodically and alternately arranged; the light-emitting device layer is located on the side, away from the substrate, of the flat layer and comprises a plurality of light-emitting devices, each light-emitting device comprises a first electrode layer, a pixel defining layer, a light-emitting unit layer and a second electrode layer which are arranged in a stacked mode, the pixel defining layer defines a plurality of pixel openings, and the pixel openings expose part of the first electrode layer; the light-emitting unit layer covers the area, exposed by the pixel opening, of the first electrode layer, and the maximum thickness of the light-emitting unit layer at the groove is larger than the maximum thickness of the light-emitting unit layer at the protrusion; within the pixel opening range, the first electrode layer and / or the second electrode layer comprise / comprises a hollow structure. According to the technical scheme, the light extraction efficiency of the light-emitting device is improved, the light-emitting efficiency is improved, and the power consumption of the light-emitting device is reduced.

The present invention discloses a semiconductor lead frame processing equipment for an automobile interactive taillight and its products, which relate to the field of semiconductor technology, including a workbench unit, an integrated processing unit, and a plurality of integrated processing units are arranged on the top of the operating table. The downward movement of the push-out bottom plate inside the integrated processing unit completes the downward positioning of the coil inside the positioning frame and limits the downward pressure of the electric test pin pre-welded on the top of the coil, thereby reducing the offset of the electric test pin during the stamping process of the stamping block, and the pressing of the stamping block and the electric test pin will form an injection channel that is connected to the construction cavity, thereby completing the stamping modeling, that is, the coil on the top surface of the middle sleeve hollow block, the push-out bottom plate, the stamping block, the surrounding plate, and the bearing plate forms a sealed mold cavity between the construction cavity and the positioning frame, so that the side wall of the reaction cup and the mouth of the reaction cup are injection molded inside the mold cavity, thereby reducing the time consumption of re-clamping and re-injection molding to form the side wall of the reaction cup and the mouth of the reaction cup after stamping.

The invention relates to a light-emitting diode, which comprises a plurality of point-shaped transparent conducting electrodes, a dielectric layer and an epitaxial composite layer, wherein the dielectric layer is arranged around each point-shaped transparent conducting electrode, and the epitaxial composite layer comprises a carbon-doped gallium arsenide epitaxial layer which is arranged on each point-shaped transparent conducting electrode and the dielectric layer and is electrically connected with each point-shaped transparent conducting electrode. According to the invention, the epitaxial structure of the light-emitting diode and the manufacturing process steps thereof can be simplified, the manufacturing process cost is reduced, the overall brightness of the light-emitting diode can be effectively improved, and the forward voltage can be reduced.

The invention relates to the technical field of illumination, and discloses a laser chip packaging material and a preparation method and application thereof. The laser chip packaging material comprises the following raw materials in parts by weight: 80-91 parts of epoxy resin AB glue and 10-21 parts of powder, wherein the powder comprises hollow glass beads and fluorescent powder, and the weight ratio of the hollow glass beads to the fluorescent powder is (22-26): (4-8); the particle size of the hollow glass beads is 30-70 [mu] m, and the particle size of the fluorescent powder is 1-20 [mu] m. According to the technical scheme, the hollow glass beads are matched with the fluorescent powder, the color of light can be adjusted, the emitting angle of the light can be adjusted, the light emitting efficiency is effectively improved, and the laser chip can work under the high-power condition and can be well applied to the fields of high-pole illumination and the like.

The invention relates to an LED display device and a manufacturing method thereof, and the LED display device comprises a substrate which is provided with a common first electrode bonding pad and a plurality of second electrode bonding pads, and the polarity of a first electrode is opposite to that of a second electrode; the multiple layers of light-emitting chips are vertically stacked on the substrate in the thickness direction of the substrate, the multiple layers of light-emitting chips are electrically connected to the public first electrode bonding pad and the public second electrode bonding pad, and first lenses are evenly distributed on the peripheral side of each layer of light-emitting chip; and the second lens is fixedly arranged above the light-emitting chip on the topmost layer. The first lens is arranged on the peripheral side of each layer of light-emitting chip, and the first lens can reflect the light emitted by the periphery of the side face of the light-emitting chip upwards, so that the light extraction efficiency is improved, and the brightness of the light-emitting chip is improved; meanwhile, the second lens arranged above the topmost light-emitting chip can further improve the light extraction efficiency, and the technical problem of brightness loss caused by direct vertical stacking of three chips in the related technology is solved.

The utility model relates to an optical waveguide structure, which comprises a glass substrate, an optical waveguide layer and a filling layer, the optical waveguide layer is composed of a thinned wafer, the refractive index of the optical waveguide layer is higher than that of the glass substrate and that of the filling layer, and the optical waveguide layer is arranged on the glass substrate in a bonding manner. The optical waveguide layer is arranged on the glass substrate, the surface, away from the glass substrate, of the optical waveguide layer is provided with an etching grating structure, the filling layer is embedded in an etching gap of the etching grating structure, the outer side surface of the filling layer and the outer side surface of the etching grating structure are approximately located on the same plane, and / or the filling layer covers the outer side surface of the etching grating structure. According to the utility model, the glass substrate is used as the optical waveguide substrate, the bonded and thinned high refractive index wafer is used as the optical waveguide layer so as to form the predetermined etching grating structure, and the filling layer with the lower refractive index is used for filling the etching gap of the etching grating structure, so that the light emitting efficiency is improved, the coupling-out uniformity is ensured, and the rainbow pattern is reduced; the method has the advantages of stable process and easy mass production, and is suitable for large-batch process production.

The application provides a triarylamine derivative and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescence. In order to solve the problem of low device performance caused by the covering layer material in the prior art, the application provides a triarylamine derivative and an organic electroluminescent device thereof, which is applied to an organic electroluminescent device as a covering layer material to effectively improve the luminous efficiency and service life of the device. Since the triarylamine derivative has strong rigidity, a suitable glass transition temperature (Tg), good thermal stability and a high refractive index in the molecule, the coupling efficiency of light in the device is increased, the light extraction efficiency is improved, the generation of Joule heat is reduced, and the service performance of the device is improved.

The invention provides a display panel and a display device. The display panel comprises a substrate; the display function layer is arranged on one side of the substrate; the light extraction layer is located on the side, away from the substrate, of the display function layer, and the light extraction layer comprises a first light extraction layer, a second light extraction layer and a third light extraction layer which are sequentially arranged in a stacked mode in the direction away from the substrate; the refractive index of the second light extraction layer is larger than the refractive index of the first light extraction layer and the refractive index of the third light extraction layer. According to the display panel provided by the invention, the refractive index of the second light extraction layer is relatively high so as to improve the microcavity effect and improve the light extraction efficiency, and the refractive index of the first light extraction layer and the third light extraction layer is relatively low so as to reduce the refractive index difference with other film layers, so that the total reflection phenomenon caused by mismatching of the refractive indexes is avoided; the light extraction efficiency and the power consumption benefit can be improved, so that the performance of the display panel is improved.

The invention relates to the technical field of semiconductor devices, in particular to a wafer and a preparation process thereof, and a laser device and a preparation process thereof, the wafer comprises a P-surface electrode, a substrate, a metal reflective layer, an epitaxial layer and an N-surface electrode which are stacked; a CuSiC alloy base plate is adopted as the substrate; and the epitaxial layer is an AlGaInP epitaxial layer after the original substrate is removed, and is bonded on the metal reflective layer. According to the technical scheme provided by the invention, the substrate adopts the CuSiC alloy substrate and is provided with the metal reflective layer, so that the LED lamp has the advantages of high luminous efficiency, high percent of pass and low manufacturing cost.

The application discloses a kind of self-sealing inorganic sealing welding LED light source and inorganic sealing welding method, LED light source includes substrate, LED chip and light window, substrate top surface is equipped with electrode layer, welding layer, and LED chip is welded on electrode layer;Light window includes tube shell, lens, and the lower end of tube shell is welded on welding layer;It is equipped with ring cup-shaped light cup around LED chip in tube shell, and the outer side of the bottom surface of light cup is equipped with the positioning gap of opening outward along circumference, and the corresponding position of welding layer is equipped with the positioning dam for cooperating with positioning gap to position light cup, and positioning dam is equipped with the sealing glue for bonding fixed light cup, and part of sealing glue overflow is connected with welding layer and is sealed;Positioning dam includes inner dam, middle dam and outer dam sequentially arranged from inside to outside, and satisfy middle dam height h2>Inner dam height h1≥Outer dam height h3.The application has the advantages of good air tightness and high light extraction efficiency.