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198results about How to "Improve light extraction efficiency" patented technology

Organic light-emitting device and manufacturing method thereof

The invention discloses an organic light-emitting device. The organic light-emitting device comprises a transparent substrate including a first face and a second face opposite to the first face, multiple light-emitting units located on the first face of the transparent substrate, a thin film transistor arranged on the transparent substrate and located between the first face and the light-emitting units, a pixel definition layer arranged between any two adjacent light-emitting units, a packaging cover plate sealing the thin film transistor, the light-emitting units and the pixel definition layer between the packaging cover plate and the transparent substrate, a partition part arranged on the pixel definition layer, sealed between the packaging cover plate and the transparent substrate and used for supporting the packaging cover plate and a metal reflection layer arranged on the second face. The invention further provides a manufacturing method of the organic light-emitting device. The metal reflection layer is arranged on the back face of the transparent substrate to improve the light emergence efficiency of an OLED device and strengthen the brightness of an OLED display module and meanwhile facilitates heat loss of a display module, and reduction of the light-emitting efficiency of the device and shortening of the service life of the device due to heat accumulation are avoided.
Owner:EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD

Light source system and projecting apparatus

The invention relates to a light source system and a projecting apparatus. The light source system comprises a first light source, a second light source, an optical filter and a wavelength conversion apparatus. An incident angle of lights of a second spectrum range generated by the second light source on the optical filter is greater than a first angle threshold value and the lights are transmitted by the optical filter. The wavelength conversion apparatus transmits a part of the lights of the second spectrum range which is transmitted by the optical filter, and reflects the other part of the lights of the second spectrum range to the optical filter. The optical filter further reflects the other part of the lights of the second spectrum range to the wavelength conversion device, wherein the incident angle of the lights of the second spectrum on the optical filter is smaller than a second angle threshold value. The first angle threshold value is greater than the second angle threshold value. In such a way, the optical filter is set to transmit the lights of the second spectrum range which is generated by the second light source and has a big incident angle, and reflects the lights of the second spectrum angle which is reflected by the wavelength conversion device and has a small incident angle, so that the light-extraction efficiency of the light source system is improved.
Owner:APPOTRONICS CORP LTD

Chip scale LED (light emitting diode) package structure

The invention discloses a chip scale LED package structure. The chip scale LED package structure comprises an LED chip with electrodes on the bottom surface, and a package adhesive body which packs the top surface and the side surfaces of the LED chip. At least one of the bottom and the side surface of the package adhesive body is provided with a reflect surface which is a reflective curved surface or a reflective flat surface extending from the bottom of the package adhesive body to the side surface of the package adhesive body. By arranging the reflective surfaces with high reflectivity on the bottom surface and/or the side surface of the package adhesive body, the chip scale LED package structure can effectively the deficiency that light is emitted out from the bottom or the side surface of the package adhesive body to result in ineffective light extraction, thereby improving the light extraction efficiency of products and reducing light losses; besides, by means of the reflective surfaces on the side surface and the bottom surface of the package adhesive body, the chip scale LED package structure can well control the light emitting angles of the products, facilitating formation of a single light exiting surface and further facilitating using compatibility of the products on different occasions. The chip scale LED package structure can be widely applied to manufacturing chip scale package LED products in the fields such as backlight and lighting.
Owner:SHENZHEN REFOND OPTOELECTRONICS

Composite white light LED and preparation method

The invention discloses a composite white light LED which comprises a substrate, an LED chip and a transparent casing. The bottom of the LED chip is fixed to the surface of the substrate. The upper part of the substrate is sleeved by a transparent shell. The upper part of the LED chip is covered with phosphor colloid. The inner surface of the transparent shell is attached with a quantum dot film. An air gap is between the quantum dot film and the phosphor colloid. The invention also discloses a preparation method of the composite white light LED. Since the air gap is between the phosphor colloid and a quantum dot shell, the air gap can prevent the absorption effect between quantum dot emitting light and fluorescent powder emitting light, the quantum dot film and a fluorescent powder layer are curved surface topographies, the removal of light energy is facilitated, and thus the light emitting efficiency of the composite white light LED is improved significantly. The operation method is simple, the cost is low, the thicknesses, topographies and compositions of the phosphor colloid and the quantum dot film can be flexibly controlled, thus the composite white light LED with high color performance is obtained, and the composite white light LED is suitable for mass production.
Owner:TIANJIN ZHONGHUAN QUANTUM TECH CO LTD

Backlight unit and liquid crystal display device

The invention provides a backlight unit and a liquid crystal display device. The backlight unit comprises a backplane, a light guide plate arranged at the bottom of the backplane, a light source arranged opposite to a light incidence surface of the light guide plate, a diaphragm set arranged above the light guide plate and a reflection piece arranged below the light guide plate, the surface of the light guide plate is provided with multiple sink parts encapsulated with quantum dot materials, and is provided with protective layers in a fitted mode, light rays generated by the quantum dot are mixed into a white light source under the excitation of the light rays, multiple refraction layers are fitted on the surfaces of the protective layers in a stacked mode towards an outer side layer in sequence, and the refractive indexes of all the refraction layers are between the protective layer and the air, and dwindle layer-by-layer in sequence. By reducing a refraction index difference value among all layers of mediums on emergence paths of the light rays from the protective layer to the air, the number of total-reflection light rays which occurs in the protective layer is reduced, and the emergence number of the light ray is further increased, and the light emergence efficiency of white back light in the backlight unit is further improved.
Owner:HISENSE VISUAL TECH CO LTD

Light-emitting diode (LED) plane light source

The invention relates to a light-emitting diode (LED) plane light source, which is characterized in that a bearing body of light-emitters (chips) is the mirror surface of a hot good conductor mirror plate and is the light extraction side of the chips; the chips are stuck to a transparent thermally conductive insulating paste thin film coating at the mirror side of the hot good conductor mirror plate by electrically conductive silver paste; and the chips are connected with each other by directly connecting positive and negative leads with pads on the LED chips. Due to the reflecting function of the mirror of the hot good conductor mirror plate, the light extraction efficiency of the light extraction ends of the LED chips and the illuminance of the light emitting end are greatly improved. PECC treatment is carried out on the surface of the non-light extraction end of the hot good conductor mirror plate, thus further improving the heat dissipation conditions of the LED plane light source. The procedures causing environmental pollution such as etching are eliminated after removing the metal core printed circuit board (MCPCB). The chips are directly connected in series by leads, thus greatly improving the processing efficiency while saving the materials. The optical system and the heat dissipating system of the whole LED plane light source system are established on a more perfect platform while the cost is lowered.
Owner:四川科芯照明股份有限公司

Manufacturing method for light-emitting diode

The invention provides a manufacturing method for a light-emitting diode. An N-GaN layer, a quantum well layer, a P-GaN layer and a light emitting epitaxial layer of a transparent conducting layer are formed on a sapphire substrate; light emitting epitaxial arrays are defined, etching and scribing are carried out according to the light emitting epitaxial arrays, a plurality of scribing channels reaching the N-GaN layer and V-type scribing grooves stretching from all the scribing channels to a preset depth of a semiconductor substrate are formed; electrodes are prepared, and the sapphire substrate is thinned; lastly, a slice splitting cutter is used for carrying out slice splitting on all the light emitting epitaxial arrays to obtain a light emitting inclined plane, wherein transverse deflection which is 1-150 microns is reserved between the compression position of the slice splitting cutter and the bottoms of the V-type scribing grooves. According to the manufacturing method for the light-emitting diode, slice splitting is carried out in the mode that the transverse deflection is reserved between the compression position of the slice splitting cutter and the scribing grooves, the light emitting inclined plane is obtained in the sapphire substrate, the light-emitting area is increased effectively, and the light-emitting efficiency of the light-emitting diode is improved. The manufacturing method for the light-emitting diode is capable of improving the light-emitting efficiency of the light-emitting diode with low cost, simple in technology and suitable for industrial production.
Owner:EPILIGHT TECH

Fluorescent transparent ceramic LED (light-emitting diode) sealing structure and sealing method thereof

The invention discloses a fluorescent transparent ceramic LED (light-emitting diode) sealing structure which comprises two planar transparent fluorescent oxide substrates and a plurality of LED chips. A conductive pattern is arranged on the front side of at least one oxide substrate; a LED bonding region is reserved on the conductive pattern; the LED chips are arranged in the LED bonding region; both surfaces of the LED chips are respectively attached to the front sides of the two oxide substrates; and insulation rubber is full filled in a gap between the two oxide substrates. The fluorescent transparent ceramic LED sealing structure provided by the invention breaks through a conventional single-side light emergence structure, the light emergence efficiency is improved and the heat dissipation capacity of the conventional single-side light emergence structure is improved; meanwhile, the conductive pattern is directly coated on the oxide substrate, so that the problem of requirement of a single product on jumping is saved; due to the adoption of a full-page packaging method, the reliability and the consistency of the product are improved and the full-page packaging method is suitable for industrialization rapid and efficient production; and moreover, according to the method, the insulation rubber is prevented from being used and the service life of the product can be effectively prolonged.
Owner:SUZHOU JINGPIN OPTOELECTRONICS

LED chip cutting method and LED chip manufactured by same

The invention discloses an LED chip cutting method on the basis of side-wall corrosion. The LED chip cutting method includes that an LED wafer is subjected to front laser scribing and side-wall corrosion and then is manufactured to form a chip according to a normal LED chip manufacturing process; back laser hidden cutting is carried out after the wafer is subjected to thinning and back plating, and positioning of hidden cutting lines is controlled, so that the hidden cutting lines are staggered from front scribing lines; and an oblique fracture surface is formed on each side wall of a crystal grain under the induction action of stress during fracturing, lateral light emergence is facilitated, the integral luminous flux of the chip is increased, and the appearance and the electric performance of the chip are unaffected. The invention further discloses the LED chip manufactured by the LED chip cutting method. Edges of the LED chip are in the shape of 'Z'-shaped sections with the oblique fracture surfaces. The 'Z'-shaped sections are manufactured by means of laser hidden cutting after the GaN wafer which is a semiconductor substrate is subjected to a chip side-wall corrosion process, accordingly, quantities of emergent light on the side walls are increased, and the brightness of the integral LED chip is improved.
Owner:FOCUS LIGHTINGS SCI & TECH

Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer

The invention discloses a patterned substrate and a preparation method thereof, an epitaxial-wafer preparation method and an epitaxial wafer and belongs to the field of light emitting diode. The method includes the following steps: depositing a silicon dioxide layer on a sapphire substrate; adopting a photoresist mask and an etching technology to etch the silicon dioxide layer until part of the sapphire substrate is exposed so that a plurality of protrusions are formed; arranging protrusion surface sputtering aluminum nitride layers on the sapphire substrate; removing the photoresist mask on the top surfaces of the protrusions and the aluminum nitride formed on the photoresist mask through sputtering; and adopting a wet etching method to remove the protrusions. When a gallium nitride layer is grown on the patterned substrate, hollow structures become air gaps. The refractive index of the gallium nitride material is 2.5 and the refractive index of the aluminum nitride material is 2.0. The air is a material with the lowest refractive index so that light is not easy to be transmitted, but easier to be reflected at the boundaries of the gallium nitride , the aluminum nitride and the air sapphire substrate and thus a higher reflectivity can be generated so that the light extraction efficiency of the light emitting diode is improved.
Owner:HC SEMITEK CORP

Display device, preparation method thereof and display device

The invention relates to a display device, a preparation method thereof and a display device. The display device comprises a TFT array substrate; a light-emitting structure which is arranged on the TFT array substrate and comprises a pixel bank, a pixel isolation column and a plurality of pixel units, wherein the height of the pixel bank is larger than that of the pixel isolation column, the pixelbank defines a plurality of pixel grooves in the TFT array substrate, the pixel isolation columns are located in the pixel grooves and divide the pixel grooves into at least two sub-pixel grooves, asub-pixel is formed in each sub-pixel groove, and the colors of the sub-pixels located in the same pixel groove are the same; a scattering layer which is arranged on the light-emitting side of the light-emitting structure and comprises a first black isolation wall and a plurality of scattering units separated by the first black isolation wall, wherein the scattering units and the pixel units are arranged in a one-to-one correspondence mode, and the first black isolation wall and the pixel isolation columns are arranged in a one-to-one correspondence mode. The display device can improve the light extraction efficiency and improve the display effect of a high-resolution display.
Owner:GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD

LED large-area controllable surface coarsening and etching method based on laser

The invention relates to an LED large-area controllable surface coarsening and etching method based on a laser, belonging to the technical field of an LED. The method utilizes semiconductor material for carrying out strong absorption generating gasification on high-power laser with the wavelength less than the band edge absorption wavelength of the semiconductor material, thus realizing surface coarsening for the semiconductor material on the surface of the LED. A high-speed galvanometer or a precise displacement platform is used for controlling the laser processing area or pattern, and can be used for controlling the laser power and the processing line width and depth of focus level adjustment. The LED large-area controllable surface coarsening and etching method can be applied to surface coarsening and etching of the GaAs-based LED and the GaN-based LED of various structures. The laser takes the wavelength less than the band edge absorption wavelength of the processed semiconductor material as reference. The method has the advantages of wide applicable material, rapid processing speed, large area, low cost, good coarsening effect, low damage for the semiconductor material, high controllability of system processing parameters and the like, can effectively solve the problem of p-GaN layer coarsening, and has great application potential in the production of the high-brightness LED.
Owner:SHANDONG UNIV

Organic light-emitting device and manufacture method of light extraction structure thereof

The invention provides an organic light-emitting device which comprises a base plate, a transparent anode positioned on the base plate, an organic cavity transport layer positioned on the transparent anode, a light-emitting layer and an electronic transport layer which are positioned on the organic cavity transport layer, and a cathode, wherein a light extraction structure capable of eliminating total reflection of an interface of the base plate and the air is formed on the surface of the base plate backing on to the transparent anode. The invention also provides a manufacture method of the light extraction structure of the organic light-emitting device. In the invention, the light extraction structure is formed on the base plate and can eliminate the total reflection of the interface of the base plate and the air to further improve the light extraction rate; and the base plate adopts material with high refractive index and high thermal conductivity, and therefore the organic light-emitting device has good heat dissipation performance, and can eliminate the total reflection between the base plate and the transparent anode, and improve the light extraction efficiency and the life of OLED simultaneously.
Owner:SHENZHEN DANBANG INVESTMENT GROUP
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