52results about How to "Improve light extraction efficiency" patented technology

The invention provides a display device and a preparation method thereof, and belongs to the technical field of semiconductors. The display device comprises a driving back plate, an insulating reflecting layer, an electrode layer and a plurality of pixel units, the plurality of pixel units are respectively bonded on the driving backboard, the plurality of pixel units are arranged at intervals, each pixel unit comprises an epitaxial layer and a passivation layer, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, and the passivation layer covers the side surface of the epitaxial layer; the insulating reflecting layer covers one side, far away from the epitaxial layer, of the passivation layer, and a groove is formed between every two adjacent pixel units; the electrode layer is located in the groove. According to the invention, the problem of low occupation ratio of small-angle light extraction efficiency of a single pixel unit can be effectively solved.

The application provides a triarylamine derivative and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescence. In order to solve the problem of low device performance caused by the covering layer material in the prior art, the application provides a triarylamine derivative and an organic electroluminescent device thereof, which is applied to an organic electroluminescent device as a covering layer material to effectively improve the luminous efficiency and service life of the device. Since the triarylamine derivative has strong rigidity, a suitable glass transition temperature (Tg), good thermal stability and a high refractive index in the molecule, the coupling efficiency of light in the device is increased, the light extraction efficiency is improved, the generation of Joule heat is reduced, and the service performance of the device is improved.

The invention relates to the technical field of semiconductor devices, in particular to a wafer and a preparation process thereof, and a laser device and a preparation process thereof, the wafer comprises a P-surface electrode, a substrate, a metal reflective layer, an epitaxial layer and an N-surface electrode which are stacked; a CuSiC alloy base plate is adopted as the substrate; and the epitaxial layer is an AlGaInP epitaxial layer after the original substrate is removed, and is bonded on the metal reflective layer. According to the technical scheme provided by the invention, the substrate adopts the CuSiC alloy substrate and is provided with the metal reflective layer, so that the LED lamp has the advantages of high luminous efficiency, high percent of pass and low manufacturing cost.

The application discloses a kind of self-sealing inorganic sealing welding LED light source and inorganic sealing welding method, LED light source includes substrate, LED chip and light window, substrate top surface is equipped with electrode layer, welding layer, and LED chip is welded on electrode layer;Light window includes tube shell, lens, and the lower end of tube shell is welded on welding layer;It is equipped with ring cup-shaped light cup around LED chip in tube shell, and the outer side of the bottom surface of light cup is equipped with the positioning gap of opening outward along circumference, and the corresponding position of welding layer is equipped with the positioning dam for cooperating with positioning gap to position light cup, and positioning dam is equipped with the sealing glue for bonding fixed light cup, and part of sealing glue overflow is connected with welding layer and is sealed;Positioning dam includes inner dam, middle dam and outer dam sequentially arranged from inside to outside, and satisfy middle dam height h2>Inner dam height h1≥Outer dam height h3.The application has the advantages of good air tightness and high light extraction efficiency.

This invention provides a double-sided uniform light-emitting, linear waterproof lighting device, comprising a lamp housing, a light source module, and a sealing structure. The lamp housing is inserted into the sealing structure and fixed with adhesive. The lamp housing includes a first diffuse light-transmitting area, a second diffuse light-transmitting area, a first reflective area, a first light-shielding area, a second reflective area, and a second light-shielding area. The first and second diffuse light-transmitting areas are located at the upper and lower ends of the light source module, respectively. The light emission direction of the light source module faces the first reflective area. After the light emitted by the light source module is reflected by the first reflective area, part of the light directly passes through the first and second diffuse light-transmitting areas and is emitted, while the other part is reflected again by the second reflective area and is emitted from the first and second diffuse light-transmitting areas. This invention improves the light emission efficiency of the light source module through multiple reflections and achieves uniform light emission from both sides. This invention has a simple structure, is easy to assemble, and achieves an IP67 waterproof rating.

The invention discloses an LED chip with a bionic structure and a manufacturing method thereof. The LED chip with the bionic structure comprises a substrate, a P electrode, a P-GaN layer, an MQW layer, an N-GaN layer and an N electrode which are sequentially stacked from bottom to top, a first vertical hole is formed in the P electrode, a second vertical hole is formed in the P-GaN layer, a third vertical hole is formed in the MQW layer, a fourth vertical hole is formed in the N-GaN layer, the first vertical hole, the second vertical hole, the third vertical hole and the fourth vertical hole are communicated with one another, and the cross sections of the first vertical hole, the second vertical hole, the third vertical hole and the fourth vertical hole are all regular hexagons. The plurality of first vertical holes, the plurality of second vertical holes, the plurality of third vertical holes and the plurality of fourth vertical holes are distributed in a hexagonal honeycomb network to form a vertical hole group; a P layer transverse hole is formed in the P-GaN layer, an N layer transverse hole is formed in the N-GaN layer, and insulating heat conduction materials are arranged in the first vertical hole, the second vertical hole, the third vertical hole, the fourth vertical hole, the P layer transverse hole and the N layer transverse hole. The invention aims to solve the technical problem that the performance of an LED chip is limited due to the fact that high luminous efficiency and efficient heat dissipation are difficult to consider at the same time in the prior art.

This disclosure relates to a display device and a method of manufacturing the display device. The display device described herein includes: a substrate; a plurality of transistors disposed on the substrate; a plurality of light-emitting elements disposed on the plurality of transistors and including an anode electrode, a light-emitting layer, and a cathode electrode; a plurality of color filters disposed on the plurality of light-emitting elements; a plurality of high-refractive-index patterns arranged to be spaced apart from each other to correspond to each of the plurality of color filters and including a plurality of first protrusions located on an upper surface; an air layer located in regions where the plurality of high-refractive-index patterns are spaced apart from each other; and a low-refractive-index layer disposed on the plurality of high-refractive-index patterns and the air layer, and having a refractive index lower than that of the plurality of high-refractive-index patterns.

A display substrate and a display device. The display substrate comprises a substrate, a display structure layer arranged on the substrate, and a color filter layer arranged on a side of the display structure layer away from the substrate; the display structure layer comprises a pixel definition layer and a plurality of light emitting elements of different colors, the pixel definition layer comprises a plurality of pixel openings, and light of the light emitting elements is emitted through the pixel openings; the color filter layer comprises a plurality of filter units of different colors, a normal projection of the filter units on the substrate at least partially overlaps with a normal projection of the light emitting elements emitting light of the same color on the substrate; wherein the color filter layer further comprises a plurality of first lenses, the first lenses are arranged on a side of the filter units of at least one color close to the substrate, a normal projection of the first lenses on the substrate at least partially overlaps with a normal projection of the pixel definition layer on the substrate; a refractive index of the first lenses is smaller than a refractive index of the filter units, and light of the light emitting elements is deflected towards a center of the light emitting elements after irradiating a surface of the first lenses.

A display device according to one aspect of this disclosure includes: a substrate including a plurality of sub-pixels; a plurality of transistors disposed on the substrate; a plurality of reflective electrodes disposed on the transistors; a plurality of bonding layers bonded to some of the reflective electrodes and comprising a conductive black material; a plurality of light-emitting diodes disposed on the plurality of bonding layers to correspond to the plurality of bonding layers, and comprising a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode; and a plurality of reflective layers disposed on the plurality of bonding layers, electrically connected to the plurality of reflective electrodes respectively, and in contact with the plurality of light-emitting diodes. Therefore, the absorption of light emitted from the light-emitting diodes by the bonding layers is suppressed, and the light extraction efficiency can be improved.

The invention provides a preparation method of a composite patterned substrate, the composite patterned substrate and an LED chip, and the method comprises the steps: forming a plurality of holes in the surface of a sapphire substrate, and carrying out the gluing, exposure and development processing, and obtaining a preset pattern; depositing a SiOF layer on the substrate; removing the preset pattern below the SiOF layer through heat treatment to form a cavity; transferring a pattern on the substrate through a nanoimprint technology; and performing inductively coupled plasma etching to form a composite pattern structure. A cavity structure is formed in a sapphire substrate through laser drilling and heat treatment, the light extraction efficiency of an LED is improved by combining with a composite pattern constructed by a nanoimprint technology and utilizing a multi-interface light scattering effect, the propagation direction of light rays can be guided by combining a patterned structure with a cavity, light emitting angle distribution is optimized, and light emitting is more uniform or the directivity is more concentrated; epitaxial growth stress is released through the cavity, dislocation density is reduced, epitaxial layer cracks are effectively inhibited, and crystal integrity is improved.

The invention discloses an organic compound taking adamantane as a core and an organic electroluminescent device containing the organic compound. The organic compound with adamantane as the core has a low visible light refractive index in the visible light field, is matched with a high-refractive-index material to form a low-high double-layer light extraction layer, and can effectively improve the light extraction efficiency of the organic electroluminescent device and greatly reduce the angle dependence after being applied to the organic electroluminescent device. Therefore, the luminous efficiency of the device is improved and the visual bias performance is optimized.

The invention provides a miniature light emitting diode and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer and a reflecting layer located on one side of the epitaxial layer, the thickness of the reflecting layer ranges from 0.9 micrometer to 1.3 micrometers, and the central wavelength reflectivity of the reflecting layer is larger than or equal to 95%. The problem that the reflecting effect of the reflecting layer of the micro light-emitting diode is poor can be solved.

The invention discloses a display substrate and a display device. The display substrate comprises a driving substrate; the light-emitting device is arranged on the driving substrate, the light-emitting device comprises a laminated structure and a second electrode, and the laminated structure comprises a first electrode, a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked in the direction away from the driving substrate; the orthographic projection of the first electrode on the driving substrate is located in the orthographic projection of the first semiconductor layer on the driving substrate, and the second electrode is arranged on the side, away from the driving substrate, of the second semiconductor layer and connected with the second semiconductor layer. The reflecting layer at least comprises a first part, and the first part covers the surface, not covered by the first electrode, of the first semiconductor layer.

The invention relates to a display panel and a display device. The display panel comprises a display back plate and a display panel, wherein the display back plate comprises three sub-pixels; the touch layer group, the first light filtering layer and the second light filtering layer are arranged on the light emitting side of the display backboard, the touch layer group comprises an insulating layer group, the insulating layer group comprises at least two insulating layers and is provided with a first concave part and a second concave part, and the orthographic projection of the first concave part on the display backboard is overlapped with the first sub-pixel; at least part of the first filter layer is located in the first sunken part, and the refractive index of the first filter layer is larger than that of the insulating layer provided with the first sunken part; at least part of the second filter layer is located in the second concave part, and the refractive index of the second filter layer is different from that of the first filter layer and larger than that of the insulating layer provided with the second concave part; the orthographic projection of the second concave part on the display back plate is overlapped with the second sub-pixel, and the area of the total reflection surface of the concave part corresponding to one of the first filter layer and the second filter layer with the larger refractive index is small.

This invention provides an organic electroluminescent device comprising red, green, and blue emitting layers and two capping layers. This organic electroluminescent device can optimize the light extraction efficiency of red, green, and blue light, thereby improving image quality and reducing the degree of color variation depending on the viewing angle.

This application relates to a display panel and a display device. The display panel includes: a substrate; a first electrode layer disposed on one side of the substrate, the first electrode layer including spaced-apart first electrode portions; a light-emitting functional layer disposed on the side of the first electrode layer away from the substrate, the light-emitting functional layer including spaced-apart light-emitting functional portions disposed on the side of the first electrode portions away from the substrate; a partition structure located between adjacent light-emitting functional portions; a first encapsulation layer and a second encapsulation layer, the second encapsulation layer being disposed on the side of the first encapsulation layer away from the substrate, the first encapsulation layer including spaced-apart encapsulation portions for encapsulating the light-emitting functional portions, the refractive index of the encapsulation portions being different from the refractive index of the second encapsulation layer, so that the interface between the encapsulation portions and the second encapsulation layer forms a light converging unit. By constructing light converging units distributed on the display panel through the high and low refractive index changes of the encapsulation portions and the second encapsulation layer, the light extraction efficiency of the display panel can be improved.

The embodiment of the present application discloses a display panel, which comprises a driving circuit layer, an anode layer, a reflection layer, a light-emitting layer and a cathode. The anode layer is arranged on the driving circuit layer. The pixel definition layer is arranged on the driving circuit layer and covers the anode layer. The reflection layer is arranged on the driving circuit layer and covers the anode layer. The reflection layer is provided with a first opening which exposes the anode layer. The side wall of the first opening is outwardly inclined. The light-emitting layer is arranged on the anode layer in the first opening. The cathode is arranged on the light-emitting layer. The present application aims to solve the technical problem of low light-emitting efficiency of the existing OLED display device.

The present disclosure provides a display device including a substrate, a reflective electrode disposed on the substrate, a light emitting element disposed on the reflective electrode, a planarization layer disposed to cover the reflective electrode and the light emitting element, and including a trench, and a second connection electrode disposed on the planarization layer and the light emitting element, wherein the second connection electrode is contiguous with the reflective electrode in the trench. Accordingly, the reflective electrode and the second connection electrode can be disposed to completely surround side surfaces and a bottom surface of the light emitting element, thereby reflecting light emitted from the light emitting element in an upward direction of the light emitting element, and improving light extraction efficiency.

The invention relates to a display panel and a display device. The display panel comprises a substrate; the array composite layer is positioned on one side of the substrate; the light-emitting units are located on the side, away from the substrate, of the array composite layer; a plurality of spill-proof structures; wherein the multiple anti-overflow structures comprise at least one of multiple retaining walls and multiple grooves, the multiple retaining walls are located on the side, away from the substrate, of the array composite layer, and the multiple grooves are located in the surface, away from the substrate, of the array composite layer; wherein in the direction parallel to the plane where the substrate is located, the at least one anti-overflow structure at least partially surrounds the corresponding light-emitting unit. The light emitting efficiency of the display panel can be improved.

The invention discloses an epitaxial structure, an LED chip and a manufacturing method thereof, the epitaxial structure comprises N stacked light-emitting units and tunnel junctions located between two adjacent light-emitting units, N is greater than or equal to 2, and N is a positive integer; the light-emitting unit comprises a first type waveguide layer, an active layer and a second type waveguide layer; the tunnel junction comprises a first type material layer and a second type material layer which are stacked; the forbidden bandwidths of the first type doping layer and the second type doping layer of the tunnel junction in the light emitting direction are not changed or are gradually increased; the array substrate further comprises a plurality of first-type reflecting layers; the first type reflection layer is laminated on the surface, facing the first type waveguide layer, of each tunnel junction; or the first type reflection layer is laminated on the surface, deviating from the active layer, of each first type waveguide layer. The epitaxial structure is combined with a plurality of light-emitting units through tunnel junctions to form a multi-junction structure, so that the working voltage is effectively improved. And moreover, the occupied area is small, and the epitaxial area loss is reduced. Through the arrangement of the forbidden band width of the tunnel junction, the top light absorption from the epitaxial structure along the light emitting direction is reduced, and the higher light emitting efficiency is ensured.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

A display device includes a substrate including a plurality of sub-pixels, a planarization layer disposed on the substrate and including a recess and a protrusion, a first electrode disposed to cover a portion of the protrusion and the recess, a reflection auxiliary layer disposed in a portion of the recess and covering at least a portion of an edge of the first electrode, a bank disposed on a portion of a top surface of the first electrode and disposed on the reflection auxiliary layer, an organic layer disposed on the top surface of the first electrode, and a second electrode disposed on the bank and the organic layer, thereby improving front brightness, viewing angle brightness, and viewing angle spot reduction effects.

The invention discloses a device beneficial to improving the light extraction efficiency of a laminated perovskite light-emitting device. In the device, a perovskite thin film of at least one light-emitting unit is composed of discrete-structure perovskite crystal grains with a light scattering effect. Light emitted by a light-emitting unit of the device has a scattering effect after passing through the discrete perovskite thin film, so that wide-angle emission of light is increased, absorption of photons by perovskite crystal grains in each layer is enhanced, the photon circulation effect is further improved, and the light-emitting efficiency of the LED device is improved. Through the discrete perovskite thin film structure design, the probability that photons are absorbed by perovskite crystal grains and then emitted can be increased through light scattering, and therefore the performance of the laminated LED is improved.

The utility model discloses an OLED display structure, which comprises an array substrate, a group of pixel units are arranged on the array substrate, each pixel unit comprises an anode, an organic light-emitting layer arranged on the anode and a cathode layer arranged on the organic light-emitting layer, a pixel definition layer is arranged around the anode of the pixel unit, and the cathode layer is arranged on the organic light-emitting layer. A partition structure used for disconnecting the organic light-emitting layer is arranged corresponding to the pixel definition layer, and a reflection structure used for increasing reflected light is arranged on the pixel definition layer. The OLED display is reasonable in structural design, the partition structure is used for disconnecting the OLED organic layer, the reflection structure is used for reflecting large-angle light, and the light emitting efficiency of the OLED is improved; the opening of the partition layer above the anode is smaller than that of the reflecting layer and plays a light extraction role; in the anode gap, the opening of the partition layer is larger than the opening of the reflecting layer, and the partition layer and the reflecting layer form an undercut structure which is used for disconnecting an electric conduction layer in the organic film layer and reducing crosstalk of the device.

The invention discloses a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate, a plurality of light-emitting structures, a packaging layer, an insulating layer, a first color film layer, a second color film layer and a third color film layer which are stacked in sequence. The substrate is provided with a first light-emitting area, a second light-emitting area, a third light-emitting area and a shading area. The light-emitting structures are located in the light-emitting areas, and the light-shielding areas are located between adjacent light-emitting structures. The side, away from the substrate, of the insulating layer is provided with a boss, and the orthographic projection of the boss on the substrate is located in the third light-emitting area. The first color film layer is located in the first light-emitting area and the shading area. The second color film layer is located in the second light-emitting area and the shading area. The third color film layer is located in the third light-emitting area and the shading area. The plane where the surface, closest to the substrate, of the first color film layer is located is located between the surface, closest to the substrate, of the third color film layer and the substrate. And in the shading area, the orthographic projection of the first color film layer on the substrate is overlapped with the orthographic projection of the third color film layer on the substrate.

The invention relates to a light emitting balance design method of a double-sided light emitting LED light source module in the technical field of intelligent manufacturing, and the method comprises the steps: adjusting the parameters of an optical processing structure in a substrate according to the intensity distribution of light emitted from the front surface, and obtaining the initial uniform data of the light distribution of the back surface; acquiring a scattering point coordinate set from the back light distribution preliminary uniform data, and determining a scattering angle adjustment value for uniform scattering optical properties of a substrate material to balance light intensity gradient distribution; heat conduction related parameters are extracted from the overall double-face light emitting equilibrium design model, heat flow distribution is simulated according to the heat dissipation thermal attribute of the light emitting diode chip, and welding process optimization points are determined; and according to the welding process optimization points, generating a module design blueprint, verifying the light emitting efficiency of the double-sided light emitting balance design model, and if an efficiency improvement index meets a preset threshold value, outputting complete solution data.

The present disclosure provides a light emitting diode and a manufacturing method thereof, and belongs to the field of light emitting devices. The light emitting diode comprises an epitaxial structure, a first electrode and a second electrode. The epitaxial structure comprises a step structure, the step structure comprises a step bottom surface, a step top surface and a step sidewall connecting the step bottom surface and the step top surface. The first electrode is electrically connected with the step bottom surface, and the second electrode is electrically connected with the step top surface. The step bottom surface is an annular area arranged along the edge of the epitaxial structure, and the first electrode is a ring electrode located on the step bottom surface.

The present disclosure provides an organic light-emitting device and a display device, and belongs to the technical field of display. The organic light-emitting device comprises a first electrode layer, a light-emitting functional layer, a second electrode layer and a cover layer which are sequentially stacked, wherein the cover layer comprises a first cover layer material and a second cover layer material; the first cover layer material and the second cover layer material satisfy the following conditions: n1(λ1)-n2(λ1)≥0.2, 440nm≤λ1≤480nm; n1(λ2)-n2(λ2)≥0.1, 500nm≤λ2≤550nm; n1(λ3)-n2(λ3)≥0.1, 600nm≤λ3≤640nm.

The present application relates to a compound represented by the following chemical formula I and an organic light-emitting device comprising the same, which is used in a light efficiency improving layer provided in an organic light-emitting device, so that a high-efficiency long-life organic light-emitting device with improved low-voltage driving, light-emitting efficiency, color purity, and life characteristics can be achieved. Chemical formula I:

The present application relates to a light emitting diode assembly and a manufacturing method thereof, the light emitting diode assembly comprising a first light emitting diode and a second light emitting diode with a height difference arranged adjacently on a front surface of a substrate, the height difference being such that a height of a second active layer of the second light emitting diode on the front surface of the substrate is higher than a height of a second semiconductor layer of the first light emitting diode on the front surface of the substrate, so as to avoid or reduce as much as possible the light generated by the second active layer of the second light emitting diode from being absorbed by the semiconductor layer of the first light emitting diode adjacent thereto, to improve the light emitting efficiency of the light emitting diode assembly as a whole, and without deliberately increasing the spacing between the first light emitting diode and the second light emitting diode adjacent thereto to improve the light emitting efficiency.