20results about How to "Improve light extraction efficiency" patented technology

The application discloses a kind of self-sealing inorganic sealing welding LED light source and inorganic sealing welding method, LED light source includes substrate, LED chip and light window, substrate top surface is equipped with electrode layer, welding layer, and LED chip is welded on electrode layer;Light window includes tube shell, lens, and the lower end of tube shell is welded on welding layer;It is equipped with ring cup-shaped light cup around LED chip in tube shell, and the outer side of the bottom surface of light cup is equipped with the positioning gap of opening outward along circumference, and the corresponding position of welding layer is equipped with the positioning dam for cooperating with positioning gap to position light cup, and positioning dam is equipped with the sealing glue for bonding fixed light cup, and part of sealing glue overflow is connected with welding layer and is sealed;Positioning dam includes inner dam, middle dam and outer dam sequentially arranged from inside to outside, and satisfy middle dam height h2>Inner dam height h1≥Outer dam height h3.The application has the advantages of good air tightness and high light extraction efficiency.

This disclosure relates to a display device and a method of manufacturing the display device. The display device described herein includes: a substrate; a plurality of transistors disposed on the substrate; a plurality of light-emitting elements disposed on the plurality of transistors and including an anode electrode, a light-emitting layer, and a cathode electrode; a plurality of color filters disposed on the plurality of light-emitting elements; a plurality of high-refractive-index patterns arranged to be spaced apart from each other to correspond to each of the plurality of color filters and including a plurality of first protrusions located on an upper surface; an air layer located in regions where the plurality of high-refractive-index patterns are spaced apart from each other; and a low-refractive-index layer disposed on the plurality of high-refractive-index patterns and the air layer, and having a refractive index lower than that of the plurality of high-refractive-index patterns.

A display substrate and a display device. The display substrate comprises a substrate, a display structure layer arranged on the substrate, and a color filter layer arranged on a side of the display structure layer away from the substrate; the display structure layer comprises a pixel definition layer and a plurality of light emitting elements of different colors, the pixel definition layer comprises a plurality of pixel openings, and light of the light emitting elements is emitted through the pixel openings; the color filter layer comprises a plurality of filter units of different colors, a normal projection of the filter units on the substrate at least partially overlaps with a normal projection of the light emitting elements emitting light of the same color on the substrate; wherein the color filter layer further comprises a plurality of first lenses, the first lenses are arranged on a side of the filter units of at least one color close to the substrate, a normal projection of the first lenses on the substrate at least partially overlaps with a normal projection of the pixel definition layer on the substrate; a refractive index of the first lenses is smaller than a refractive index of the filter units, and light of the light emitting elements is deflected towards a center of the light emitting elements after irradiating a surface of the first lenses.

A display device according to one aspect of this disclosure includes: a substrate including a plurality of sub-pixels; a plurality of transistors disposed on the substrate; a plurality of reflective electrodes disposed on the transistors; a plurality of bonding layers bonded to some of the reflective electrodes and comprising a conductive black material; a plurality of light-emitting diodes disposed on the plurality of bonding layers to correspond to the plurality of bonding layers, and comprising a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode; and a plurality of reflective layers disposed on the plurality of bonding layers, electrically connected to the plurality of reflective electrodes respectively, and in contact with the plurality of light-emitting diodes. Therefore, the absorption of light emitted from the light-emitting diodes by the bonding layers is suppressed, and the light extraction efficiency can be improved.

The present disclosure provides a display device including a substrate, a reflective electrode disposed on the substrate, a light emitting element disposed on the reflective electrode, a planarization layer disposed to cover the reflective electrode and the light emitting element, and including a trench, and a second connection electrode disposed on the planarization layer and the light emitting element, wherein the second connection electrode is contiguous with the reflective electrode in the trench. Accordingly, the reflective electrode and the second connection electrode can be disposed to completely surround side surfaces and a bottom surface of the light emitting element, thereby reflecting light emitted from the light emitting element in an upward direction of the light emitting element, and improving light extraction efficiency.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

A display device includes a substrate including a plurality of sub-pixels, a planarization layer disposed on the substrate and including a recess and a protrusion, a first electrode disposed to cover a portion of the protrusion and the recess, a reflection auxiliary layer disposed in a portion of the recess and covering at least a portion of an edge of the first electrode, a bank disposed on a portion of a top surface of the first electrode and disposed on the reflection auxiliary layer, an organic layer disposed on the top surface of the first electrode, and a second electrode disposed on the bank and the organic layer, thereby improving front brightness, viewing angle brightness, and viewing angle spot reduction effects.

The present disclosure provides an organic light-emitting device and a display device, and belongs to the technical field of display. The organic light-emitting device comprises a first electrode layer, a light-emitting functional layer, a second electrode layer and a cover layer which are sequentially stacked, wherein the cover layer comprises a first cover layer material and a second cover layer material; the first cover layer material and the second cover layer material satisfy the following conditions: n1(λ1)-n2(λ1)≥0.2, 440nm≤λ1≤480nm; n1(λ2)-n2(λ2)≥0.1, 500nm≤λ2≤550nm; n1(λ3)-n2(λ3)≥0.1, 600nm≤λ3≤640nm.

The present application relates to a compound represented by the following chemical formula I and an organic light-emitting device comprising the same, which is used in a light efficiency improving layer provided in an organic light-emitting device, so that a high-efficiency long-life organic light-emitting device with improved low-voltage driving, light-emitting efficiency, color purity, and life characteristics can be achieved. Chemical formula I:

The present application relates to a light emitting diode assembly and a manufacturing method thereof, the light emitting diode assembly comprising a first light emitting diode and a second light emitting diode with a height difference arranged adjacently on a front surface of a substrate, the height difference being such that a height of a second active layer of the second light emitting diode on the front surface of the substrate is higher than a height of a second semiconductor layer of the first light emitting diode on the front surface of the substrate, so as to avoid or reduce as much as possible the light generated by the second active layer of the second light emitting diode from being absorbed by the semiconductor layer of the first light emitting diode adjacent thereto, to improve the light emitting efficiency of the light emitting diode assembly as a whole, and without deliberately increasing the spacing between the first light emitting diode and the second light emitting diode adjacent thereto to improve the light emitting efficiency.

A display device according to an exemplary embodiment of the present disclosure includes: a substrate; a plurality of light-emitting elements disposed on the substrate; and a plurality of filters disposed between the plurality of light-emitting elements, wherein each of the plurality of filters includes: an inner filter; an outer filter configured to cover the inner filter and the refractive index of the outer filter being less than that of the inner filter; a filter reflective layer configured to cover the outer filter; and an anti-reflective layer disposed on at least one side surface of the filter reflective layer.

The application provides an LED chip, a manufacturing method thereof and an LED display device, wherein an epitaxial structure of the LED chip is formed with a recess structure with an inner recess, a side wall of the recess structure has an included angle with a normal direction of a light emitting surface of the LED chip, so that the side wall of the recess structure is an inclined side wall, when light emitted by the LED chip is scattered to the inclined side wall, the inclined side wall is aligned to reflect and gather, so that the light emitted by the LED is as much as possible to be limited in the normal direction, thereby greatly reducing the light emitting angle of the LED chip, increasing the light emitting amount in the normal direction of the LED chip and the light emitting efficiency of the LED chip. In addition, the above structure and the reflection structure on the electrode side of the LED chip jointly act, further increase the reflection of the light emitted by the LED, and can further increase the light emitting amount in the normal direction of the LED chip and the light emitting efficiency of the LED chip. The display device of the application comprises the above LED chip, and the above LED chip can improve the display effect of the display device, and is also beneficial to reduce the power consumption of the display device.

This invention discloses a miniature light-emitting diode (LED) chip, including, for example, an epitaxial structure. The epitaxial structure includes a first-doped semiconductor layer, a second-doped semiconductor layer, and an active layer located between the first and second-doped semiconductor layers. A patterned structure is provided on the light-emitting side of the first-doped semiconductor layer away from the active layer. The long side *a* of the miniature LED chip, the thickness *b* of the miniature LED chip, and the peak-valley height difference *c* of the patterned structure satisfy the conditions: 0.01 ≤ *b / a* ≤ 6 and 0.01 ≤ *c / b* ≤ 0.3. This invention, by designing the structural dimensions and / or shape of the miniature LED chip, for example, designing the peak-valley height difference of the patterned structure to satisfy the condition 0.01 ≤ *c / b* ≤ 0.3, can reduce the power of laser stripping, increase the process window, and improve light extraction efficiency. This invention also provides a display device using the aforementioned miniature LED chip.

This invention relates to the field of organic electroluminescent devices, and discloses a silicon-containing organic compound, its application, and an organic electroluminescent device. The compound has the structure shown in formula (I). The aforementioned organic compound provided by this invention has a high glass transition temperature, a high decomposition temperature, and a high refractive index. When applied as a capping layer on a device, it can improve the light extraction efficiency of the cathode, thereby improving the luminous efficiency of the device.

This invention relates to the field of organic electroluminescent materials, specifically to an iridium metal complex, and more particularly to an iridium metal complex for deep red-near-infrared emission and its applications, as well as organic electroluminescent devices using the iridium metal complex of this invention. The iridium metal complex of this invention has the structure shown in formula (1). OLED devices prepared using the iridium metal complex of this invention exhibit higher luminous efficiency and better lifespan, demonstrating promising application prospects.

This invention relates to a method for fabricating a light-emitting element based on an ultra-smooth interface composite functional transparent conductive layer, comprising the following steps: (1) providing a substrate and performing epitaxial growth; (2) growing a composite functional layer with a thickness of 5-10 nm on the surface of the epitaxial structure; (3) polishing the composite functional layer to ensure that the surface roughness Ra < 0.2 nm; (4) defining the photonic crystal pattern and etching photonic crystal pre-holes in the composite functional layer; (5) depositing the composite transparent conductive layer: firstly, using an atomic layer deposition system (ALD), filling the photonic crystal pre-holes with an ITO material of an indium-tin weight ratio of 90:10, and then growing a second ITO layer with a thickness of 30 nm and an indium-tin weight ratio of 95:5 as a current diffusion layer by sputtering or ion beam deposition, and finally performing high-temperature thermal annealing; this invention optimizes the light extraction efficiency and current diffusion performance of the device by combining fundamental planarization of the substrate interface with the precise fabrication of nanophotonic structures.

The utility model discloses a kind of curtain wall decorative lamps, including lamp shell, light source board, lampshade and adjusting mounting seat, light source cavity inside lamp shell is equipped with asymmetric light-reflecting inclined plane A and light-reflecting inclined plane B, cooperate with the light mixing inclined plane in lampshade, light efficient mixing and uniform light emission are realized jointly, effectively eliminate glare and mottle, light source board adopts double-row lamp pearl of staggered arrangement, each lamp pearl is equipped with flexible convex cover, further eliminate stray light, lamp body bottom connects multiple groups of anti-falling rope, guarantee high-altitude safety, its core is adjusting mounting seat adopts worm gear drive mechanism, by rotating knob, stepless fine adjustment of the pitch angle of lamp body can be realized, and using its inherent self-locking characteristic, ensure that angle adjustment is long-term stable after, windproof and anti-vibration, solve the difficult problem that traditional curtain wall lamp adjustment is complicated, easy to deviate.

The utility model discloses a kind of CSP lamp bead packaging structures of embedded coplanar welding.The packaging structure includes metal substrate and LED chip with first, second electrode.The core is, metal substrate and electrode have mutually adapted three-dimensional geometry configuration, and they form docking structure, so that electrode bottom surface and metal substrate bottom surface jointly form a wide coplanar welding plane.The utility model realizes the self-alignment and pre-welding mechanical locking of chip by three-dimensional docking structure, solves the existing tiny CSP chip mounting difficulty, the problem of low yield;And through the coplanar welding plane formed, fundamentally solve the problem of insufficient welding area, poor reliability, while optimizing heat dissipation performance.

This invention provides a photosensitive composition and a polymer from which the photosensitive composition is readily obtained, and further provides a cured product, a display element, a camera element, a display device, a camera device, and a method for manufacturing the cured product. The photosensitive composition exhibits excellent solubility in versatile solvents and can readily form a cured product with a high refractive index. A photosensitive composition comprises component (A): a polymer containing the structure represented by the following formula (1); component (B): a photoinitiator; and component (C): a polymeric compound having vinyl unsaturated bonds. (In formula (1), is a thermally detachable group).