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3758results about How to "Improve light extraction efficiency" patented technology

LED (Light Emitting Diode) lamp tube

The invention discloses an LED (Light Emitting Diode) lamp tube, which comprises a glass tube, lamp caps arranged at two ends of the glass tube as well as an LED lamp strip arranged in the glass tube, wherein the inner wall of the glass tube is coated with a light increasing and heat radiating film; and the LED lamp strip is fixedly adhered to the inner wall of the glass tube through a high heat conduction bonding adhesive. The light increasing and heat radiating film is an aluminum-coated layer, or a frosted heat conduction light increasing adhesive layer or a nano adhesive layer capable of increasing light and radiating heat. The LED lamp strip comprises a substrate, wherein a plurality of LED light sources are welded on the substrate, or an integrated light source consisting of an LED chip is packaged on the substrate; and a driving power supply module is also arranged on the LED lamp strip. According to the LED lamp tube disclosed by the invention, the light emitting efficiency, the light emitting angle and the illumination area of the LED lamp tube are increased; the problems of glare and point light existing in the LED lamp tube are solved; heat generated by an LED is transmitted to the whole glass tube through the substrate of the LED, so that the heat radiating area is greatly increased and the heat increasing speed of the LED lamp tube is increased; the LED lamp tube can be applied to a lamp holder of a traditional fluorescent lamp, and thus the generality of the LED lamp tube is greatly improved; and the replacement and use costs are reduced.
Owner:中山市世耀智能科技有限公司

LED (Light Emitting Diode) lamp filament and manufacturing method thereof

The invention provides an LED (Light Emitting Diode) lamp filament and a manufacturing method thereof. An LED chip is encapsulated on the edge top surface of a thin and long sheet metal support of the LED filament innovatively, meanwhile the sheet metal is inserted into a preformed transparent plastic model frame to produce a light source, and accordingly the automated continuous production of the LED lamp filament is implemented and the problem of the facing direction strength caused by the too thin and too long metal support is solved due to the transparent plastic model frame; meanwhile the lateral direction strength of the metal support is effectively utilized and accordingly the integral mechanical strength of the LED lamp filament is ensured; the heat dissipation characteristics of the metal is directly utilized, meanwhile the heat dissipation efficiency of the LED chip is maximized through the innovative encapsulation of thermal conductive coatings, and accordingly the problem of a heat dissipation bottleneck of the LED lamp filament is effectively solved, the LED lamp filament can work at the rated power for a long time, and the cost is reduced; the LED light extraction efficiency is improved, the light attenuation is reduced, the high lighting effect and ambient light of lamp filament light emission is implemented, and the market vacancy of the existing LED lamp filament is filled through innovative fluorescence encapsulation materials.
Owner:DONGGUAN RIWEI ELECTRONICS

Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode)

The invention discloses a method for preparing a two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode). The method comprises: firstly, spinning a layer of ultraviolet optical resist on a target; copying the two-dimensional photonic crystal structure of a template to the surface of the optical resist by utilizing ultraviolet soft nanoimprinting, and etching to remove the residual resist; evaporating a layer of SiO2 or Cr film on a photonic crystal ultraviolet resist, thus a photonic crystal image is obtained on a target sheet through etching; and theobtained GaN is subjected to removing of photoresist, cleaning and drying, thus a photonic crystal target sheet is obtained, and carrying out subsequent process treatment on the obtained target sheet, thus the manufacturing of a device is finished, and the photonic crystal GaN based LED with high light extracting efficiency is obtained. Through the method provided by the invention, the selection ratio of etching can be improved, the duty ratio of the photonic crystal can be regulated in a certain range, the uneven problem of the surface of the LED chip can be overcome, the photonic crystal image can be prepared better through the nanoimprinting technology, and the method is suitable for the preparation of the GaN based photonic crystal LED in industrial production.
Owner:HUAZHONG UNIV OF SCI & TECH
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