1026 results about "Split lines" patented technology

A method of dividing a wafer having devices formed in a plurality of areas sectioned by a plurality of dividing lines, into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer by applying a laser beam of a wavelength having permeability for the wafer along the dividing lines; a wafer supporting step for putting the rear surface of the wafer on the surface of an adhesive tape which is mounted on an annular frame and whose adhesive strength is reduced by applying ultraviolet radiation thereto; and a chips-spacing forming step for reducing the adhesive strength of the adhesive tape and shrinking a shrink area between the inner periphery of the annular frame and the area to which the wafer has been affixed, of the adhesive tape by applying ultraviolet radiation to the adhesive tape to which the wafer has been affixed so as to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and widen the space between adjacent chips.

The brittle workpiece splitting system 1 includes a substrate holding mechanism 10 for holding a substrate 51, and a processing unit 5 for splitting the substrate 51 held by the substrate holding mechanism 10 by a splitting process. The substrate holding mechanism 10 has an edge damper 12 adapted to clamp an edge part of the substrate 51 from the sides of the opposite surfaces of the edge part, and support members 19 for supporting the substrate 51 thereon at a predetermined height. The support members 19 are disposed on the side opposite the side of the edge damper 12 with respect to the intended split line 61 parallel to the edge part of the substrate 51. The edge damper 12 has an edge holder 15 on which the substrate 51 is seated, and a pressure bar 14 for pressing the substrate 51 against the edge holder 15 to hold the substrate 51 between the edge holder 15 and the pressure bar 14. Resin members 14a and 15a made of an elastic material having comparatively high rigidity are attached to parts, to be brought into contact with the substrate 51, of the pressure bar 14 and the edge holder 15, respectively. The support members 19 are made of a low-friction material to permit the horizontal movement of the substrate 51 during the splitting process.

A wafer formed from an SiC substrate having a first surface and a second surface is divided into individual device chips. A division start point formed by a cutting blade has a depth corresponding to the finished thickness of each device chip along division lines formed on the first surface. A separation start point is formed by a laser beam having a focal point set inside the SiC substrate at a predetermined depth from the second surface, and the laser beam is applied to the second surface while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along a c-plane. An external force is applied to the wafer, thereby separating the wafer into a first wafer having the first surface and a second wafer having the second surface.