147results about How to "Light absorption" patented technology

Laser radiation delivered to a treatment area causes vaporization of a substantially greater volume of tissue than the volume of residual coagulated tissue. The laser radiation may have a wavelength of about 300 nm to about 700 nm, may be used with a smoke suppressing irrigant, may have an average irradiance greater than about 5 kilowatts / cm2, and may have a spot size of at least 0.05 mm2. A laparoscopic laser device, for use with an insufflated bodily cavity, may include an elongate body adapted for insertion into an insufflated bodily cavity. A laser energy delivery element, at the distal end of the elongate body, may be coupleable to a source of tissue-vaporization-capable laser energy and capable of delivering laser energy along a laser energy path extending away from the laser energy delivery element. A smoke-suppressing liquid pathway, extending along the elongate body to an exit opening at the distal end, may be coupleable to a source of a smoke-suppressing liquid. The smoke-suppressing liquid is directed generally along the laser energy path. A remote visualization device may be used to view along the laser energy path.

Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below and is characterized in that the crystal orientation of a first dopant implanted layer (52) is the same as the crystal orientation of a semiconductor layer or a base (10) that is formed of a semiconductor element. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

The invention provides a method for separating semiconductor light-emitting devices formed on a substrate. In the method, a pulse laser beam having a pulse width less than 10 ps in a substrate is focused on the substrate, to thereby cause multi-photon absorption in the substrate. Through multi-photon absorption, a groove is formed through the pulse laser beam along a split line predetermined on a surface of the substrate, the groove being substantially continuous in the direction of the predetermined split line. In addition, internal structurally changed portions are formed through the pulse laser beam at a predetermined depth of the substrate on a predetermined split face, the structurally changed portions being discontinuous in the direction of the predetermined split line. Subsequently, an external force is applied to thereby form a split face along the continuous groove and the discontinuous internal structurally changed portions, whereby the semiconductor light-emitting devices are separated from one another

An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and / or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.

A device having arrays of semiconductor structures with dimensions, ordering and orientations to provide for light absorption and charge carrier separation. The semiconductor structures are formed with relatively high aspect ratios, that is, the structures are long in the direction of received light, but have relatively small radii to facilitate efficient radial collection of carriers.

An encapsulant material with enhanced light reflectivity, a crystalline silicon photovoltaic module and a thin film photovoltaic module are provided. The encapsulant material has a porous structure therein, and an average pore diameter of the porous structure is between several hundreds of nanometers and several hundreds of micrometers, so that the light reflectance of the encapsulant material is improved. Moreover, the encapsulant material is crosslinked by a physical or chemical crosslinking method, so heat resistance thereof is improved. Therefore, the encapsulant material is suitable for the crystalline silicon photovoltaic module and the thin film photovoltaic module, so as to increase power conversion efficiency of these modules.

One or more embodiments of the present invention provide apparatuses and systems to form edge-illuminated LED backlight units for flat-panel LCD displays. The backlight unit is able to achieve uniform color and brightness distribution with very small dimensions of depth and bezels. One or more embodiments of the present invention include a light guide coupled to a light guide plate, which, by operating together, provide simple, efficient, few LEDs and low cost backlight units. Effective coupling structures provide high system efficiency.

A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

The present invention relates to a photocatalyst using a semiconductor-carbon nanomaterial core-shell composite quantum dot and a method for preparing the same, more particularly to a microparticle in which a semiconductor-carbon nanomaterial core-shell composite quantum dot is self-assembled using 4-aminophenol, capable of improving photoelectochemical response and photoconversion efficiency when used as a photocatalyst or a photoelectrode of a photoelectochemical device, a photoelectochemical device using the same and a method for preparing the same.

A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

A liquid crystal elastomer actuator to move in a fluid is described herein. The actuator includes a body with dimensions between 100 nm and 800 μm having a low Reynolds number. The body includes a first and a second spatially separated volume, each comprising a liquid crystal elastomer. The first volume is doped with a first photoactive doping substance to absorb electromagnetic radiation at a first wavelength and the second volume is doped with a second photoactive doping substance to absorb electromagnetic radiation at a second wavelength. The first and second volumes change shape as a consequence of light absorption at the first or second wavelength, defining a first and a second joint. A first absorbance of the first volume at a given wavelength is different than a second absorbance of the second volume at a given wavelength, the first and second absorbance are measured in the same time interval.

The present invention relates to a solar cell having quantum dot nanowire array and the fabrication method thereof. The solar cell according to the present invention includes quantum dot nanowire array with a heterostructure including matrix and semiconductor quantum dots, and p-type and n-type semiconductor and electrodes each contacting the quantum dot nanowires. With the solar cell according to the present invention, the band gap energy of the semiconductor quantum dot can be easily controlled, the semiconductor quantum dots having different sizes are provided in the quantum dot nanowire so that the photoelectric conversion can be performed in the wide spectrum from visible rays to infrared rays, the quantum dot is embedded in the high density quantum dot nanowire array so that light absorption can be maximized, and the quantum dot nanowire contact p-type and n-type semiconductor over a wide area, conduction efficiency of electrons and holes can be improved.

An integrated optical circuit device includes: a first optical element section including first and second element regions deposited along a thickness direction; a second optical element section formed away from the first optical element section; and a multimode interference region provided between the first and second optical element sections, the multimode interference region including a buried portion formed along a light propagation direction. The first and second optical element sections are optically coupled to each other via the multimode interference region.

A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.

Fluid-based particle detection exhibits improved light collection and image quality from a light collection system that uses immersed optics on a flow-through cell for collecting and detecting scattered light from particles carried by the fluid.

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.

A photoelectric conversion device comprising: a substrate; a conducting layer; a photoelectric conversion layer; and a transparent conducting layer provided in this order, wherein the transparent conducting layer has a thickness of not more than ⅕ of that of the photoelectric conversion layer.

A method of drilling multiple orifices in and texturing a substrate is disclosed and includes the following steps. Ultrafast laser pulses are passed through a beam splitting diffractive optical element and then multiple beams are passed through a distributive-focus lens focusing assembly. The relative distance and / or angle of said distributive-focus lens focusing assembly in relation to the laser source is adjusted focusing the pulses in a distributed focus configuration creating a principal focal waist and at least one secondary focal waist. The fluence level of the at least one secondary focal waists is adjusted such that it is or they are of sufficient intensity and number to ensure propagation of multiple filaments in the substrate. Photoacoustic compressive machining is performed and forms multiple volume(s) within the substrate.

An oligoaniline compound represented by the formula (1) can provide a charge transporting thin film which shows a suppressed coloration in the visible range. Use of this thin film makes it possible to ensure a color reproducibility of a device without lowering the color purity of an electroluminescent light or a light having passed through a color filter.wherein R1 to R10 independently represent each a hydrogen atom, a halogen, etc.; m and n independently represent each an integer of 1 or more while satisfying the condition m+n≦20; and X is a structure represented by any of the following formulae (4) to (10), etc.;wherein R21 to R36 independently represent each a hydrogen atom, a hydroxyl group, etc.; p and q represent each an integer of 1 or more while satisfying the conditions p≦20 and q≦20; and W1s independently represent each —(CR1R2)p-, —O—, —S—, etc.

Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

A single mode optical waveguide which is lithographically formed and employs polymeric materials having low propagation loss. The optical waveguide has a substrate, a polymeric, buffer layer having an index of refraction nb disposed on a surface of the substrate, a patterned, light-transmissive core layer having an index of refraction nc disposed directly on a surface of the cladding layer, and an overcladding layer having an index of refraction no on a top surface of the core, side walls of the core, and exposed portions of the buffer layer, with nb<no<nc and DELTAn=nc-no.

Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

In a top emission type organic EL display device, brightness gradient in a screen is reduced while keeping a screen brightness. A reflection film is formed under a lower electrode and the light from an organic EL layer is emitted through an upper electrode. Light absorption of the upper electrode is larger on the side of a shorter wavelength. When a film thickness of the upper electrode is enlarged in order to reduce the brightness gradient in a screen, the film thicknesses of the upper electrodes for a red pixel and a green pixel are enlarged without enlarging the film thickness of the upper electrode for a blue pixel. This makes it possible to reduce the brightness gradient as well as to suppress the light absorption of the upper electrode.