18results about How to "Improve light trapping" patented technology

The invention provides a solar cell and a photovoltaic module, and belongs to the technical field of solar cells. The solar cell includes: a semiconductor substrate; a tunneling oxide layer located on at least one surface of the semiconductor substrate; the doped polycrystalline silicon layer is positioned on one surface, far away from the semiconductor substrate, of the tunneling oxide layer; wherein at least one part of the surface, far away from the tunneling oxide layer, of the doped polycrystalline silicon layer is provided with silicon-containing convex particles. The photovoltaic module provided by the invention comprises the solar cell. According to the invention, the silicon-containing protruding particles are formed on at least one part of the surface, far away from the tunneling oxide layer, of the doped polycrystalline silicon layer, so that the light trapping effect of at least one surface of the solar cell is improved, and the double-sided rate of the solar cell is further improved.

The invention provides a perovskite-crystalline silicon laminated cell, which comprises a heterogeneous crystalline silicon cell, a tunnel junction, a conductive layer, a first carrier transport layer, a perovskite light absorption layer, a second carrier transport layer and a transparent electrode layer which are sequentially laminated, wherein the first carrier transport layer comprises a dendritic structure facing and extending into the perovskite light absorption layer, and the length of the dendritic structure is smaller than the thickness of the perovskite light absorption layer. According to the perovskite-crystalline silicon laminated cell provided by the invention, through the arrangement of the dendritic structure with a relatively good capillary effect in the first carrier transport layer, a high-quality perovskite absorption layer can be formed, so that the energy conversion efficiency of the perovskite-crystalline silicon laminated solar cell is greatly improved.

The invention belongs to the technical field of welding equipment, and particularly relates to computer circuit board tin soldering equipment and a welding spot detection method.The computer circuit board tin soldering equipment comprises a machine table, a vertical frame is fixedly assembled on the surface of the machine table, a second rail is fixedly assembled on one side of the top of the vertical frame, and a sliding block is slidably assembled on one side of the second rail through a rail machine; a third rail is fixedly assembled on the outer side of the sliding block, a side frame is assembled on the outer side of the third rail in a sliding mode through a rail machine, a laser generator used for generating laser is fixedly assembled below the side frame, and a tin bar wire feeding mechanism used for conveying tin bars is fixedly assembled on the outer side of the side frame. A rolling mechanism used for changing the surface appearance of a tin bar is arranged in the tin bar wire feeding mechanism, and a temperature control mechanism used for controlling the welding spot cooling speed is arranged from one side to the bottom of the laser generator. The micro-groove can be prepared on the surface of the tin bar, the light energy absorption rate is improved, and the problem of rapid cooling of a welding spot can be solved.

The embodiment of the present application provides a silicon wafer processing method and device. The silicon wafer processing method includes: polishing the silicon wafer to remove the damaged layer on the surface of the silicon wafer; providing a reaction gas, wherein the reaction gas includes at least oxygen and a halogen-containing gas; at a first preset temperature, using the oxygen and the halogen-containing gas to react with the surface of the silicon wafer to form a micro-suede surface on the surface of the silicon wafer, and removing metal impurities from the silicon wafer. The embodiment of the present application can reduce the consumption of chemicals and water resources, reduce the impact of the silicon wafer micro-suede manufacturing process on the environment, avoid damage to the silicon wafer and its micro-suede, and is also conducive to the formation of a microstructure with higher coverage and higher aspect ratio, so as to enhance the light trapping effect of the micro-suede surface and improve the quality of the micro-suede surface. Moreover, the metal impurities on the surface of the silicon wafer can also be removed, thereby improving the purity of the silicon wafer.

The invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, a laminated battery and a photovoltaic module, and the back contact battery comprises a battery substrate which is provided with a first surface and a second surface which are opposite to each other; the isolating membrane is positioned on the first surface; the isolating membrane comprises at least two isolating units, the surface, far away from the first surface, of each isolating unit comprises a first area and a second area surrounding the first area, each isolating unit comprises a first part located in the first area and a second part located in the second area, the first part is provided with a groove sunken towards the battery substrate, and the edge, far away from the first part, of the second part is fluctuant; and an electrode on the second surface. The invention is at least beneficial to improving the light absorption and utilization rate of the back contact cell by means of the isolating membrane.

This disclosure relates to the field of solar cell manufacturing technology, and discloses a method for fabricating a solar cell and the solar cell itself. The fabrication method includes: providing a substrate layer with a first textured surface; forming an anti-reflection passivation layer on the surface of the substrate layer, the anti-reflection passivation layer conformally covering the first textured surface; laser-treating the anti-reflection passivation layer to form a second textured surface, the second textured surface including multiple micro-recesses; and forming a repair passivation layer on the laser-treated surface of the anti-reflection passivation layer to repair laser damage introduced by the laser treatment, the repair passivation layer conformally covering the second textured surface. This disclosure can ensure the passivation effect of the cell while improving the light-trapping effect of the cell surface.

The invention provides a three-terminal laminated solar cell based on a silicon nanowire structure, and relates to the technical field of solar cells. A first electrode layer is arranged in the perovskite top cell in the direction facing the incident light, a second electrode layer and a third electrode layer are arranged in the crystalline silicon bottom cell in the direction deviating from the incident light, and a plurality of nanowire structures are arranged on one side, facing the incident light, of an N-type silicon absorption layer at intervals. The nanowire structure can enhance coupling and propagation of long-wave photons to the N-type silicon absorption layer through a waveguide effect and a light field modulation effect, and the nanowire structure presents a sub-wavelength optical characteristic, so that an anti-reflection effect in a wide spectrum range is realized, and the absorption efficiency of the crystal silicon bottom cell on the long-wave photons is improved. In addition, by arranging a three-electrode structure, the overall energy output performance of the battery is improved.

The invention provides a laminated cell with a resistance-increasing bulge structure, which comprises a heterogeneous crystalline silicon cell, a tunnel junction, a conductive layer, a first carrier transport layer, a resistance-increasing layer, a perovskite light absorption layer, a second carrier transport layer and a transparent electrode layer which are sequentially laminated, and the resistance-increasing layer is a suede with nanoscale bulges. According to the laminated cell with the resistance-increasing bulge structure provided by the invention, the dispersed nanoparticles with the nanoscale are arranged on the resistance-increasing layer, so that the problem of cell short circuit caused by non-uniformity and exposure of the perovskite light absorption layer when the perovskite light absorption layer is deposited is solved, and the photoelectric conversion efficiency of the laminated cell is improved.

The present disclosure relates to the technical field of solar cell, and particularly relates to a rounded reagent and a photovoltaic cell and a preparation method thereof. A textured pyramid structure is arranged on a poly removal area of the photovoltaic cell, and the top angle of the top of the pyramid and the bottom angle of the bottom of the pyramid are both rounded. The photovoltaic cell has excellent passivation performance and a double-sided rate simultaneously.

The invention provides a preparation method of a laminated cell with a resistance-increasing bulge structure. The preparation method comprises the following steps: forming a tunnel junction on one surface of a heterogeneous crystalline silicon cell; preparing a conductive layer on the surface, far away from the heterogeneous crystalline silicon cell, of the tunnel junction; the surface, away from the tunnel junction, of the conductive layer is coated with a first carrier transmission layer; the surface, away from the conductive layer, of the first carrier transmission layer is coated with a resistance increasing layer; coating a perovskite light absorption layer on the surface, far away from the first carrier transmission, of the resistance increasing layer; preparing a second carrier transport layer on one surface, far away from the resistance increasing layer, of the perovskite light absorption layer; forming a transparent electrode layer on one surface, far away from the perovskite light absorption layer, of the second carrier transport layer; wherein the step of preparing the resistance increasing layer also comprises the step of preparing a suede with nanoscale bulges. According to the invention, the resistance increasing layer is provided with the nano-scale dispersed nanoparticles, so that the problem of cell short circuit caused by non-uniformity and exposure of the perovskite light absorption layer during deposition of the perovskite light absorption layer is solved.

The invention provides a texturing additive, a texturing solution and a use method thereof. The texturing additive is prepared from the following components in percentage by mass: 0.01 to 0.5 weight percent of nucleating agent, 0.5 to 4.0 weight percent of defoaming agent, 0.1 to 4.0 weight percent of suede stabilizer, 0.5 to 3.0 weight percent of suede regulator, 0.5 to 5.0 weight percent of surfactant, 0.1 to 5.0 weight percent of activating agent and the balance of deionized water, wherein the nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic basic group. The used nucleating agent is a water-soluble dendritic polymer macromolecule containing an organic alkaline functional group, and compared with the existing texturing liquid, the texturing liquid adopting the texturing additive disclosed by the invention has the advantages that the surface of a monocrystalline silicon wafer can be etched to form a pyramid-shaped textured structure without additionally adding inorganic alkali; therefore, the problem that etching is violent and uncontrollable due to the use of strong base is solved.

The invention relates to a solar cell and a photovoltaic module, and the solar cell comprises a silicon substrate, a first semiconductor layer and a second semiconductor layer. The silicon substrate comprises a first region, a second region, a platform region and a slope region; the first semiconductor layer is deposited on the first area, the platform area and the slope area in a conformal manner; the second semiconductor layer is deposited on the second region in a shape follow-up manner; the slope area is located between the first area and the platform area; the electrical properties of the first semiconductor layer and the second semiconductor layer are different; the platform area is provided with a texture structure, the slope area is provided with a plurality of vertical textures and a plurality of arc-shaped textures, and the arc-shaped textures are overlaid on the vertical textures. According to the scheme, the light trapping effect of the solar cell can be improved, and the adhesive force of a subsequently deposited structural layer is enhanced. In addition, the arc-shaped textures are overlapped on the vertical textures, and the structure can block the etching paste, so that the excessive expansion of the etching paste is avoided.

The invention provides a preparation method of a perovskite-crystalline silicon laminated cell. The preparation method comprises the following steps: forming a tunnel junction on one surface of a heterogeneous crystalline silicon cell; preparing a conductive layer on the surface, far away from the heterogeneous crystalline silicon cell, of the tunnel junction; the surface, away from the tunnel junction, of the conductive layer is coated with a first carrier transmission layer; the surface, away from the conductive layer, of the first carrier transport layer is coated with a perovskite light absorption layer; preparing a second carrier transport layer on one surface, far away from the first carrier transport layer, of the perovskite light absorption layer; forming a transparent electrode layer on one surface, far away from the perovskite light absorption layer, of the second carrier transport layer; the first carrier transport layer further comprises a dendritic structure which faces and extends into the perovskite light absorption layer, and the length of the dendritic structure is smaller than the thickness of the perovskite light absorption layer. According to the perovskite-crystalline silicon laminated solar cell, a high-quality perovskite absorption layer can be formed through a dendritic structure with a relatively good capillary effect in the first carrier transmission layer, so that the energy conversion efficiency of the perovskite-crystalline silicon laminated solar cell is greatly improved.

The invention is applicable to the technical field of solar cells, and provides a solar cell and a passivation contact structure thereof, a cell module and a photovoltaic system, and the passivation contact structure of the solar cell comprises a passivation layer arranged on the surface of a silicon substrate; the quantum dot layer is arranged on one side, away from the silicon substrate, of the passivation layer and is provided with a plurality of quantum dots which are arranged at intervals; and the doping layer is arranged on one side, deviating from the silicon substrate, of the quantum dot layer. According to the solar cell passivation contact structure provided by the invention, the quantum dot layer is arranged between the doping layer and the passivation layer, so that the utilization rate of sunlight of different wave bands can be improved, the cell efficiency of the solar cell is improved, the thickness design of the doping layer can be reduced under the condition that the cell efficiency of the same solar cell is realized, and the solar cell efficiency is improved. And the production cost of the solar cell is reduced.

The invention discloses a texturing method and a solar cell. The texturing method comprises the following steps: preparing a pyramid textured surface on the surface of a crystalline silicon substrate; forming an oxidized glass layer on the pyramid suede; removing the parts, corresponding to the pyramid suede, of the tower body and the tower bottom in the oxidized glass layer, and reserving the part, corresponding to the tower tip, in the oxidized glass layer; further texturing the pyramid textured surface with the partial oxidized glass layer reserved on the spire; and removing the oxidized glass layer on the spire of the pyramid suede subjected to further texturing treatment. According to the texturing method, the controllability of the pyramid structure of the textured surface is improved, the inclination of the base angle and the side face of the pyramid structure is increased, the light trapping performance of the pyramid structure is improved, and the light utilization rate of the crystalline silicon solar cell is improved.

The application relates to the technical field of solar cells, and provides a back contact cell, a cell assembly and a photovoltaic system. A first polarity region of the back contact cell is stacked with a first tunneling layer and a first doped layer. The first tunneling layer comprises a first nitride layer. A plurality of holes are formed on the first tunneling layer. The surface of the first polarity region is a rough surface. The first polarity region has a plurality of first pyramid structures. The first pyramid structure has a first tower base inclined surface. The first tower base inclined surface comprises a first region, a second region and a third region arranged in sequence along the direction from the bottom of the first pyramid structure to the top of the first pyramid structure. The second region is located between the first region and the third region. The hole density of the part of the first tunneling layer located on the third region is greater than the hole density of the part of the first tunneling layer located on the second region. In this way, the Auger recombination loss increase in the body region can be reduced, the collection efficiency of carriers can be improved, and the defects in the silicon substrate can be reduced.

The invention discloses a double-sided crystalline silicon solar cell, comprising a silicon substrate, a back passivation film and a back electrode, wherein the back passivation film is stacked on the back of the silicon substrate, the back passivation film is a blue film with a thickness of 60-90 nm, the back electrode comprises a back silver electrode in contact with the silicon substrate, a back aluminum main grid and a plurality of back aluminum sub-grids formed on the back passivation film, the back aluminum sub-grids intersect with the back aluminum main grid, the back silver electrode is nested in the back aluminum main grid, and the short-circuit current and conversion efficiency of the back of the solar cell can be improved.