The application relates to the technical field of solar cells, and provides a back contact
cell, a
cell assembly and a
photovoltaic system. A first polarity region of the back contact
cell is stacked with a first tunneling layer and a first doped layer. The first tunneling layer comprises a first
nitride layer. A plurality of holes are formed on the first tunneling layer. The surface of the first polarity region is a
rough surface. The first polarity region has a plurality of first
pyramid structures. The first
pyramid structure has a first
tower base inclined surface. The first
tower base inclined surface comprises a first region, a second region and a third region arranged in sequence along the direction from the bottom of the first
pyramid structure to the top of the first pyramid structure. The second region is located between the first region and the third region. The hole density of the part of the first tunneling layer located on the third region is greater than the hole density of the part of the first tunneling layer located on the second region. In this way, the
Auger recombination loss increase in the
body region can be reduced, the collection efficiency of carriers can be improved, and the defects in the
silicon substrate can be reduced.