The invention provides a preparation method of a laminated
cell with a resistance-increasing bulge structure. The preparation method comprises the following steps: forming a
tunnel junction on one surface of a heterogeneous
crystalline silicon cell; preparing a conductive layer on the surface, far away from the heterogeneous
crystalline silicon cell, of the
tunnel junction; the surface, away from the
tunnel junction, of the conductive layer is coated with a first carrier transmission layer; the surface, away from the conductive layer, of the first carrier transmission layer is coated with a resistance increasing layer;
coating a
perovskite light
absorption layer on the surface, far away from the first carrier transmission, of the resistance increasing layer; preparing a second carrier
transport layer on one surface, far away from the resistance increasing layer, of the
perovskite light
absorption layer; forming a transparent
electrode layer on one surface, far away from the
perovskite light
absorption layer, of the second carrier
transport layer; wherein the step of preparing the resistance increasing layer also comprises the step of preparing a suede with nanoscale bulges. According to the invention, the resistance increasing layer is provided with the nano-scale dispersed nanoparticles, so that the problem of cell
short circuit caused by non-uniformity and
exposure of the perovskite light absorption layer during deposition of the perovskite light absorption layer is solved.