Contact-passivation crystalline silicon solar cell structure and preparation method

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of affecting the collection of carriers and requiring high film thickness, and achieve the effects of good light trapping, improving comprehensive performance and improving carrier transport capability.

Active Publication Date: 2019-02-15
CHANGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a high film thickness, which will seriously affect the collection of carriers if it is higher than 2nm.

Method used

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  • Contact-passivation crystalline silicon solar cell structure and preparation method
  • Contact-passivation crystalline silicon solar cell structure and preparation method
  • Contact-passivation crystalline silicon solar cell structure and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1. Double-sided texturing of N-type silicon wafers, followed by RCA cleaning

[0041] 2. The silicon wafer enters the diffusion tube for B diffusion, and a pn junction is formed on the light-receiving surface

[0042] 3. Use single-sided etching equipment to protect the surface B of the silicon wafer with a water film, and use alkali or acid to remove the expanded junction on the back to form a polished surface. Finally, the borosilicate glass BSG on the light-receiving surface is removed by HF

[0043] 4. Prepare an aluminum oxide film on the back, using ALD, with a thickness of about 1.5nm, (you can also use hot nitric acid oxidation, or ultraviolet ozone treatment to form an ultra-thin silicon oxide film)

[0044] 5. A 5nm Ag film is prepared by thermal evaporation on the back of the silicon wafer, and then annealed at 500°C to form metal nanoparticles. The annealing process can also enhance the passivation effect of the passivation film;

[0045] 6. Prepare aluminu...

Embodiment 2

[0051] 1. Double-sided texturing of P-type silicon wafers, followed by RCA cleaning

[0052] 2. The silicon wafer enters the diffusion tube for P diffusion, and a pn junction is formed on the light-receiving surface

[0053] 3. Use single-side etching equipment to protect the front P of the silicon wafer with a water film, and use alkali or acid to remove the wound junction on the back to form a polished surface, and finally remove the front phosphosilicate glass PSG by HF

[0054]4. Prepare an aluminum oxide film on the back, using ALD, with a thickness of about 1.5nm, (you can also use hot nitric acid oxidation, or ultraviolet ozone treatment to form an ultra-thin silicon oxide film)

[0055] 5. A 5nm Al film is prepared by thermal evaporation on the back of the silicon wafer, and then annealed at 500°C to form metal nanoparticles. The annealing process can also enhance the passivation effect of the passivation film.

[0056] 6. Prepare an aluminum oxide thin film on the ba...

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Abstract

The invention discloses a contact-passivation crystalline silicon solar cell structure and a preparation method thereof and belongs to the technical field of a solar cell. An N-type silicon wafer or aP-type silicon wafer is used as a substrate of the solar cell; a structure of an illuminated surface of the N-type silicon wafer substrate sequentially includes a P+ diffusion layer, a silicon oxideor aluminum oxide, silicon nitride film and a grid line electrode from bottom to top; a structure of a back surface of the N-type silicon wafer substrate sequentially includes silicon oxide or aluminum oxide, an metal nanoparticle coated aluminum oxide film, an N-type polycrystalline silicon, the silicon nitride film and the grid line electrode from top to bottom; a structure of an illuminated surface of the P-type silicon wafer substrate sequentially includes an N+ diffusion layer, the silicon oxide film, the silicon nitride film and the grid line electrode from bottom to top; a structure ofa back surface of the P-type silicon wafer substrate sequentially includes silicon oxide or aluminum oxide, the metal nanoparticle coated aluminum oxide film, a P-type polycrystalline silicon, the silicon nitride film and the grid line electrode from top to bottom; the mutual synergistic effect exists between stacked layers; and the obtained solar cell is capable of remarkably improving the cellefficiency.

Description

technical field [0001] The patent of the invention belongs to the technical field of solar cells, and relates to a contact passivation crystalline silicon solar cell structure and preparation method Background technique [0002] In order to reduce the cost per kilowatt-hour of photovoltaic power generation, it is necessary to further improve the conversion efficiency of solar cells. Recombination losses in the contact area must be accounted for. The current method used by the industry to solve this problem is to use local contact structures, such as PERC, PERL, and PERT cells. In this cell structure, most of the area is covered with a passivation layer, reducing the area where the silicon and metal are in contact. However, these batteries all require local openings, which increases the complexity of the process, and the recombination and lateral transport at the openings have also become key factors in battery design. Another approach to reduce contact recombination losse...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/054H01L31/056H01L31/18
CPCH01L31/02167H01L31/054H01L31/056H01L31/1804Y02E10/52Y02E10/547Y02P70/50
Inventor 丁建宁叶枫袁宁一王书博李云鹏
Owner CHANGZHOU UNIV
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