1122results about How to "Improve passivation effect" patented technology

A method for forming a nitrogen-containing oxide thin film by using plasma enhanced atomic layer deposition is provided. In the method, the nitrogen-containing oxide thin film is deposited by supplying a metal source compound and oxygen gas into a reactor in a cyclic fashion with sequential alternating pulses of the metal source compound and the oxygen gas, wherein the oxygen gas is activated into plasma in synchronization of the pulsing thereof, and a nitrogen source gas is further sequentially pulsed into the reactor and activated into plasma over the substrate in synchronization with the pulsing thereof. According to the method, a dense nitrogen-containing oxide thin film can be deposited at a high rate, and a trace of nitrogen atoms can be incorporated in situ into the nitrogen-containing oxide thin film, thereby increasing the breakdown voltage of the film.

A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.

The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.

The invention relates to the soil improvement technology and the environment protection technology, in particular to a soil heavy metal passivant for the facilities vegetable field and a preparation method thereof for solving the problem that due to solid heavy metal pollution, the sustainable utilization of the facilities vegetable field is influenced. The soil heavy metal passivant for the facilities vegetable field comprises the following components in percentage by weight: 10 to 30 percent of medical stone powder, 10 to 30 percent of diatomite in powder, 10 to 20 percent of zeolite powder, 20 to 30 percent of lignite and 25 to 35 percent of fly ash. The preparation method for the soil heavy metal passivant comprises the following steps: mixing the medical stone powder passing through a 80-mesh screen, the diatomite in powder passing through a 80-mesh screen and the zeolite powder passing through a 80-mesh screen with lignite and uniformly stirring the mixture; and mixing the mixture with the fly ash passing through a 80-mesh screen, sufficiently stirring the mixture and after mixing uniformly, preparing the soil heavy metal passivant. The invention has simple preparation method and achieves the effects of passivating the soil heavy metals in the facilities vegetable filed and reducing the content of heavy metals in the soil which can be utilized by the crops by synergistic effect of the components.

The invention provides a passivation improver for a heavy metal pollution farmland and a using method of the passivation improver. The raw materials comprise coal ash, nano iron powder, zeolite, medical stone, calcium magnesium phosphate, hydroxypropyl modified SiO2/chitosan nanoparticles and porous spherical cellulose. According to the composite passivation improver, the passivation effect on heavy metals cadmium, lead, arsenic and chromium in soil can be improved, copper and zinc in soil are well passivated, and the soil remediation effect is improved.

The invention provides a back contact solar battery and a preparing method of the back contact solar battery. The preparing method of the back contact solar battery includes the steps of providing a first mould slide boat and a second mould slide boat, wherein the first mould slide boat comprises first film growing areas and first shielding areas which are distributed alternatively, and the second mould slide boat comprises second film growing areas and second shielding areas which are distributed alternatively, the first film growing areas correspond to the second shielding areas, and the second film growing areas correspond to the first shielding areas. First doped amorphous silicon indication areas and second doped amorphous silicon indication areas are formed on the surfaces, with passivated layers, of monocrystalline silicon substrates through the mould slide boats, wherein the first doped amorphous silicon indication areas and the second doped amorphous silicon indication areas are opposite in doping type and crossed in distribution. By means of the preparing method, a fork structure of a back field of the back contact solar battery is achieved simply at low cost, additional manufacturing process of forming the passivated layers is needless, and the preparing method of the back contact solar battery is simplified.

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron/gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.

The invention provides modified biomass charcoal for treating arsenic pollution as well as a preparation method and an application of the modified biomass charcoal. The preparation method of the modified biomass charcoal comprises steps as follows: (1) biomass raw materials are charred, and the biomass charcoal is obtained; (2) the biomass charcoal is subjected to a reaction with a hydrochloric acid solution, solid-liquid separation is performed, a solid substance is obtained, is washed till the pH is neutral and then is dried, and the pretreated biomass charcoal is obtained; (3) the pretreated biomass charcoal and a FeCl3 solution are subjected to a reaction under the condition that the solution pH is neutral, solid-liquid separation is performed after the reaction, and mud cake is obtained; (4) the mud cake is dried and then washed till the pH is neutral, solid-liquid separation is performed, an obtained solid is dried for a second time, and the modified biomass charcoal is obtained. The modified biomass charcoal has large specific surface area and high iron content; the preparation method is simple and easy to operate; the modified biomass charcoal can be applied to treatment of arsenic waste and passivation of arsenic in farmland soil, and food safety is guaranteed.

The invention relates to a method of cleaning a boiler, in particular to a method of chemically cleaning a boiler, which comprises the following steps: caustic cleaning, acid cleaning, rinsing, passivating and liquid waste processing. The invention has the advantages that: 1. raw material adopted in the whole cleaning process has little toxic side effect and is environment-friendly. 2. Technological mistaken ideas on cleaning various prior boilers are overcome. 3. Sequential processing is easy according to cleaning solutions.

The invention provides a composite passivator applicable to rice field soil cadmium pollution. The composite passivator is mainly prepared from chitosan, sodium bentonite, bone meal, lime, charcoal, ZnO and nanometer FeO. The invention further provides a preparation method and application of the composite passivator. By means of the composite passivator, the available cadmium content in rice and the cadmium content in rice can be remarkably reduced, the soil pH value can be improved, vast rice soil polluted by heavy metal cadmium can be treated, the organic matter content is greatly improved, and the soil biology-chemical characteristic is improved.

The invention discloses a heavy metal passivator for vegetable field soil. The components of the heavy metal passivator comprise burnt lime, organic fertilizer for heavy metal removal and expanded perlite. The selected expanded perlite has the particle diameter ranging from 0.5 to 1.5cm preferentially. The heavy metal passivator for vegetable field soil provided by the invention passivate heavy metals, which mainly include plumbum, cadimium, chrome, copper, zinc, and the like, causing mild contamination in the vegetable field soil so that safe vegetable products can be produced on the soil slightly contaminated, the ecological function and industry function of the vegetable field soil can be recovered; therefore, the quality and the merchantability of the vegetables are improved. The materials selected for the invention are all common and easy to prepare and have low cost, which is convenient for being popularized. Experiments prove that the heavy metal passivator has extremely remarkable passivation effect on heavy metals as well as has very favorable ecological and economic benefits.

The invention relates to a monocrystalline silicon solar cell and a preparation method thereof, in particular to a monocrystalline silicon solar cell with a buried charge layer introduced into a passivating dielectric layer, and belongs to the technical field of the preparation of solar cell devices. The monocrystalline silicon solar cell is developed based on the preparation scheme of the general monocrystalline silicon solar cell and adopts a structure of partial back contact, and the preparation method is characterized by comprising the steps of: growing an SiO2 layer on the back of a solar cell by utilizing a thermal oxidation or atomic layer deposition technology, growing a layer of SiNx thin film by using PECVD (Plasma Enhanced Chemical Vapor Deposition), etching a back electrode contact area by using a laser grooving technology, then injecting electrons with a corona mode, and finally depositing an Al electrode with a vacuum evaporation mode. The invention can effectively improve the solar cell efficiency.

The invention discloses a double-layer passivating method for a crystalline silicon solar battery, comprising the following steps: (1) selecting a silicon chip, cleaning, and polishing or texturing; (2) growing Al2O3 on the silicon chip obtained in step (1) by an ALD (atomic layer deposition) or PECVD (plasma enhanced chemical vapor deposition) method, wherein the refractive index is 1.5-1.7, the thickness is 10-80nm; (3) growing SiNx on the silicon chip obtained in step (2) by the PECVD or PVD (physical vapor deposition) method, wherein the refractive index is 1.9-2.2, the thickness is 30-150nm; and (4) annealing the sample obtained in step (3) at the temperature of 200-600 DEG C in the atmosphere of N2 or a hydrogen argon gas mixture for 1-30 minutes to obtain a double-layer passivated dielectric film. The passivating method provided by the invention can reduce the surface recombination velocity of the silicon chip to below 10cm/s, can be well applied to surface passivation of a crystalline silicon solar battery, and obtains high conversion efficiency.

The invention provides an aluminum alloy 5052 having high corrosion resistance and a manufacturing method thereof, which belongs to the technical field of alloy materials and solves the problem of low corrosion resistance of the traditional aluminum alloy 5052 material. The aluminum alloy 5052 having high corrosion resistance comprises the following components in percentage by weight: no more than 0.20% of Si, no more than 0.20% of Cu, 2.4-2.6% of Mg, no more than 0.10% of Zn, no more than 0.10% of Mn, 0.18-0.30% of Cr, 0.01-0.40% of Fe, no more than 0.05% of single other element, no more than 0.15% of total other elements, 0.01-0.8% of rare earth elements and the balance of Al. The aluminum alloy 5052 having high corrosion resistance can improve the corrosion resistance and simultaneously maintain the stabilization of mechanical properties.

A nutritive soybean milk without anti-nutrition factors is prepared from soybean, white sugar, milk powder and sodium chloride through immersing, passivating lip-oxidase and urease by boiling and adding sodium dicarbonate, grinding, enzymolyzing by adding alkaline proteinase, reacting and fast heating, separating milk from dregs, colloid grinding, mixing it with additive, homogenizing, vacuum degassing and sterilizing.

The present invention provides a crystalline silicon solar cell and a preparation method thereof. The crystalline silicon solar cell comprises: an N-type silicon substrate; a tunneling oxide layer formed on the back surface of the N-type silicon substrate; and a polysilicon layer formed on the tunneling oxide layer, wherein the polysilicon layer comprises alternatively distributed N+ polysilicon areas and P+ polysilicon areas, and a space is arranged between each neighboring N+ polysilicon area and P+ polysilicon area. The tunneling oxide layer, the N+ polysilicon areas and the P+ polysiliconareas form a passivation contact structure on the back surface of the N-type silicon substrate. According to the crystalline silicon solar cell and the preparation method thereof, the recombination rate of the back surface of a battery is effectively reduced, and the open circuit voltage of the battery is improved. Compared with the conventional back knot and back contact solar cells, the doping process of the front surface is saved, the battery preparation process is simplified, the absorption loss of light is reduced, and thus the solar cell can facilitate the improvement of battery performance and the reduction of cost.

The invention relates to a method for preparing modified biomass charcoal for passivating lead and cadmium in soil. The method comprises the following steps: A, grinding and screening biomass raw materials; B, respectively dissolving FeSO4.7H2O and KMnO4 in water, uniformly mixing, regulating the pH value to 7, thus obtaining iron and manganese oxide suspension; C, adding the ground biomass raw materials into the iron and manganese oxide suspension, uniformly stirring, soaking, drying at the temperature of 105 DEG C for 6 hours, thus obtaining a biomass material loaded with iron and manganese oxides; and D, adding the biomass material loaded with iron and manganese oxides into a reactor, raising the temperature to 450-650 DEG C under oxygen-limited conditions, carrying out a pyrolysis carbonization reaction, thus obtaining the modified biomass charcoal. According to the method disclosed by the invention, the iron and manganese oxides are distributed in the surface and pores of the biomass charcoal, a passivation effect of the biomass charcoal on heavy metals lead and cadmium can be obviously improved, the environmental benefits of the biomass charcoal for treating contaminated soil are effectively improved, and the remediation cost of heavy metal contaminated soil also can be effectively reduced.

The invention provides an SiO2/SiN double layer passivation layer T-typed grid AlGaN/GaN HEMT which comprises: a substrate which is grown with a GaN buffer layer, a GaN intrinsic layer and an AlGaN barrier layer in order; source and drain electrodes which are provided on the barrier layer at two sides; a lower passivation layer which is provided between the source and drain electrodes and is on the barrier layer; an upper passivation layer which is provided between the source and drain electrodes and is on the passivation layer, wherein, a bar shaped grid groove is provided between the lower passivation layer and the upper passivation layer; a gate electrode whose section is a T shape, wherein, the gate electrode is provided in the bar shaped grid groove, and an upper part of the gate electrode is higher than a surface of the upper passivation layer.

The invention discloses a solar cell passivation antireflection film and a preparation technology and a method of the solar cell passivation antireflection film. The preparation technology and the method utilize a plasma enhanced chemical vapor deposition (PECVD), a layer of silicon dioxide film is deposited on the surface of a silicon slice, then a silicon nitride layer with high refractive index is deposited on the prepared silicon dioxide film, and finally a silicon nitride layer with low refractive index is deposited on the silicon nitride layer with high refractive index. The technology and the method have the advantages of being convenient to operate, low in operation cost, good in passivation and good in antireflection performance for the cell surface. The passivation antireflection film prepared by the technology can obviously improve the open circuit voltage, short circuit current and the cell efficiency of the solar cell, compared with a traditional single-layer or double-layer silicon nitride film.

A method for passivating a cavity surface of a semiconductor laser belongs to the technical field of the process of a semiconductor photoelectronic device. The known technical difficulties in the field are as follows: the output power is greatly improved, and the reliability of the device maintains a high level. The method for passivating the cavity surface of the semiconductor laser effectively improves the output power and the reliability of the semiconductor laser. The passivation method adopts the cleaning technology for reactive ions of a hydrogen ion and a nitrogen ion in sequence, so that an absorption-free area containing a nitride transition layer is generated on the cleavage cavity surface of the laser, and then a passivation and barrier layer, namely a AIN film coats the transition layer, so as to form a passivation film and then carry out normal coating process. The technical proposal can be applied to the manufacture of various semiconductor laser light sources.