228results about How to "Improve passivation effect" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a passivated specific light receiving surface and a preparation method and application thereof.The back contact cell comprises a substrate, the substrate is provided with a backlight surface and a light receiving surface, the light receiving surface of the substrate is sequentially provided with a first tunneling oxide layer, a doped amorphous silicon layer and a silicon medium anti-reflection layer, the thickness of the first tunneling oxide layer is 0.2-1.5 nm, and the thickness of the doped amorphous silicon layer is 0.2-1.5 nm; the doped amorphous silicon layer is doped with an oxygen element and a hydrogen element, the first tunneling oxide layer is doped with a hydrogen element, and the content of the hydrogen element close to the side of the doped amorphous silicon layer in the first tunneling oxide layer is greater than the content of the hydrogen element close to the side of the substrate. According to the invention, good passivation effect and optical loss can be taken into account, and the passivation effect is enhanced, so that the passivation effect and current of the battery are improved, the efficiency of the battery is improved, and the equipment cost is low.

The invention discloses a back contact cell, a photovoltaic module and a photovoltaic system.The back contact cell comprises first areas, second areas and isolation areas which are arranged on the shady face of a silicon substrate, the first areas and the second areas are alternately arranged, and the isolation areas are located between the first areas and the second areas; the first region comprises a first doped conductive layer, the second region comprises a second doped conductive layer, and the doping type of the first doped conductive layer is opposite to that of the second doped conductive layer; the side, close to the isolation area, of the first area is provided with a concave structure. According to the invention, efficient isolation of different doped regions on the back surface of the back contact cell can be realized, so that the photoelectric conversion efficiency of the back contact cell is improved.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, so as to improve the photoelectric conversion efficiency of the solar cell comprising a fragmented cell, greatly reduce the mechanical damage of the fragmented cell, greatly reduce the hidden crack possibility of a photovoltaic module comprising the fragmented cell, and improve the production efficiency of the photovoltaic module. And the product yield is further improved. The preparation method of the solar cell comprises the following steps: providing a whole solar cell; a first laser device is adopted to form positioning grooves in the two ends of the to-be-segmented area respectively; a second laser device is adopted to heat the to-be-segmented area from the positioning groove until the other positioning groove is finished; spraying cooling liquid to the heated to-be-segmented area by adopting a spraying device, so that the whole solar cell is cracked in the to-be-segmented area along the first direction to form at least two segmented cells; the cooling liquid comprises oxidizing substances, and the cross section is a surface hydroxylated silicon surface; and forming a passivation layer on the fracture surface.

The invention relates to a solar cell and a preparation method thereof, and a photovoltaic module, and the preparation method of the solar cell comprises the steps: providing a substrate which comprises a first surface and a second surface which are oppositely disposed along the thickness direction of the substrate; forming a tunneling passivation layer on the first surface of the substrate; based on physical vapor deposition, a first doping layer and a second doping layer are formed at least on the side, away from the substrate, of the tunneling passivation layer in a laminated mode, the doping type of the first doping layer and the doping type of the second doping layer are both P types, doping elements of the first doping layer and the doping elements of the second doping layer are not completely the same, the first doping layer at least comprises gallium elements, and the second doping layer at least comprises gallium elements. The second doping layer at least comprises a boron element, the first doping layer and the second doping layer are both prepared by physical vapor deposition, the doping elements of the first doping layer and the second doping layer are not completely the same, the cost is low, and the passivation performance is good.

The invention relates to the technical field of solar cells, in particular to a film layer structure for improving UV attenuation of a TOPcon cell. In order to improve the passivation effect of the front face of the TOPCon cell, an aluminum oxide passivation layer is generally arranged on the surface of a BSG layer on the front face of the TOPCon cell, but the aluminum oxide passivation layer is poor in ultraviolet resistance and prone to being damaged by ultraviolet light, and then the service life of the cell is affected. Aiming at the problem, the invention provides the film layer structure for improving UV attenuation of the TOPcon battery, the second silicon oxide layer and the first silicon oxide layer are respectively arranged above and below the aluminum oxide layer, and the silicon nitride layer is arranged on the surface of the second silicon oxide layer, so that the passivation effect of the front surface of the obtained TOPcon battery is remarkably improved, the attenuation speed of the battery is effectively reduced, and the service life of the battery is prolonged. And the service life of the battery is prolonged.

The invention relates to a manufacturing method of a solar cell and the solar cell, the back surface of the solar cell is provided with a first region and a second region, and a second electrode of the solar cell is arranged in the second region; the manufacturing method of the solar cell comprises the following steps: texturing a cell piece; carrying out boron diffusion on the battery piece; performing laser etching on the first region; the first area is subjected to groove type cleaning; and carrying out chain type cleaning on the second area. In the invention, the back surface of the battery piece is selectively etched through laser to remove the borosilicate glass layer in the first area and reserve the borosilicate glass layer in the second area, so that the first area of the battery piece is cleaned and polished in the subsequent preparation steps; the borosilicate glass layer of the second region protects the textured structure of the second region in the subsequent preparation step, so that the tunneling dielectric layer and the doped conductive layer in the second region also have textured structures, thereby increasing the contact area between the second electrode and the doped conductive layer, and improving the photoelectric conversion efficiency of the solar cell.

The invention discloses a solar cell which comprises a silicon substrate, the surface of at least one side of the silicon substrate is provided with a micro-suede of a sand dune-like structure, and a tunneling oxide layer is laminated on the micro-suede; the sand dune-like structure is provided with at least one vertex, and 3-6 curved side edges pass through each vertex; and the side edges are sunken towards the inner part of the sand dune-like structure. The invention also provides a preparation method of the solar cell. According to the solar cell, the surface reflectivity of the solar cell can be effectively reduced, and the characteristics of surface passivation, surface contact and the like are improved, so that the transmission efficiency and the collection efficiency of carriers are improved, and the short-circuit current density and the conversion efficiency of the solar cell are further improved.

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

The embodiment of the invention provides a manufacturing method of a battery piece and a solar cell, and the method comprises the steps: providing an initial battery piece; cutting the initial battery piece to form a slice battery piece with at least one cutting surface; forming a first passivation layer, wherein the first passivation layer at least covers the cutting surface of a part of the sliced battery piece; forming a second passivation layer, wherein the second passivation layer at least covers the surface of the first passivation layer; forming a third passivation layer, wherein the third passivation layer at least covers the surface of the second passivation layer; forming a fourth passivation layer, wherein the fourth passivation layer at least covers the surface of the third passivation layer; wherein the first passivation layer is made of semiconductor oxide, the second passivation layer is made of metal semiconductor oxide, the third passivation layer and the fourth passivation layer are made of metal oxide, the density of the third passivation layer is larger than that of the fourth passivation layer, the thickness of the third passivation layer is smaller than that of the fourth passivation layer, and battery efficiency and production efficiency can be both considered.

The invention relates to a solar cell and a preparation method thereof. According to the preparation method of the solar cell, the amorphous silicon layer is formed on the back tunneling oxide layer, the doped polycrystalline silicon layer is formed in the first process through diffusion doping treatment, and the doped silicon oxide layer is formed on the doped polycrystalline silicon layer in the second process. And after the doped silicon oxide layer is formed, selective heavy doping of the back surface is realized by adopting a laser doping process, and a selective emitter is formed in a heavy doping region. On one hand, the doped silicon oxide layer can provide sufficient impurity ions for SE doping, and on the other hand, the doped silicon oxide layer can protect the tunneling oxide layer and reduce or prevent the tunneling oxide layer from being damaged in the SE laser doping process, so that a good passivation effect can be achieved.

The invention is suitable for the technical field of solar cells, and provides a solar cell, a cell assembly and a photovoltaic system, the solar cell comprises a silicon wafer, the surface of which is provided with a P-type doped region; the first P-type doped layer is arranged in the P-type doped region, boron elements and second elements are doped in the first P-type doped layer, the second elements are one or more elements except the boron elements in the IIIA family elements, and the doping activation concentration of the second elements in the first P-type doped layer is larger than that of the boron elements. According to the solar cell provided by the invention, light-induced degradation can be reduced, the power generation power of the cell module is improved, the surface recombination loss can be reduced, the passivation effect is improved, and the efficiency of the solar cell is improved.

The invention relates to a solar cell, a laminated cell and a photovoltaic module, and the solar cell comprises a substrate, a first surface of the substrate comprises a first region and a second region, the first region comprises a first sub-region, a tunneling layer is disposed on the first region, and a doped conductive layer is disposed on the side, away from the substrate, of the tunneling layer. The first passivation layer is arranged on the side, away from the tunneling layer, of the doped conductive layer and on the second area, the first anti-reflection layer is arranged on the side, away from the substrate, of the first passivation layer, the first fine grids are arranged on the first sub-areas in a one-to-one correspondence mode, and at least part of structures of the first fine grids penetrate through the first anti-reflection layer and the first passivation layer. The distance L1 between the first fine grid and the edge of the first sub-region corresponding to the first fine grid in the first direction meets the condition that L1 is larger than or equal to 50 micrometers and smaller than or equal to 800 micrometers, and therefore light parasitic absorption of the doped conductive layer can be reduced, meanwhile, the performance of carrier transverse transmission is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of solar cells, and provides a photovoltaic cell back surface processing method, a TOPCon cell, a preparation method and a photovoltaic module. According to the photovoltaic cell back surface treatment method, through polishing treatment of the back surface of a silicon substrate, oxidation treatment is carried out on a doped polycrystalline silicon layer in a non-metallization area in sequence, the oxidation treatment depth is controlled to reach the tail of a doped polycrystalline silicon band so as to form a silicon oxide layer in the non-metallization area, and subsequent acid pickling is carried out. The reflectivity of the back surface of the doped polycrystalline silicon band tail in the non-metallization region is higher than that of the back surface of the doped polycrystalline silicon layer in the metallization region; therefore, the back metal electrode adhesion performance and the metal contact performance of the metallization region on the back of the cell can be further improved, the passivation effect and the light secondary reflection absorption effect of the non-metallization region on the back of the cell can be further improved, and parasitic absorption can be reduced, so that the photoelectric conversion efficiency of the cell can be greatly improved.

The invention relates to the technical field of solar cells, in particular to a trans-perovskite solar cell and a preparation method thereof. The structure of the trans-perovskite solar cell sequentially comprises a conductive substrate layer, a hole transport layer, a lower interface passivation layer, a perovskite light absorption layer, an upper interface passivation layer, an electron transport layer, a buffer layer and a top electrode from bottom to top, wherein the material of the upper interface passivation layer is a DSA and PEAI double-interface material. According to the invention, DSA and PEAI are introduced into the upper interface of the trans-perovskite solar cell to passivate a plurality of different defects and improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

The invention provides a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: annealing a cut solar cell; a passivation solution is coated on the cutting edge of the solar cell, the passivation solution comprises at least one passivator with a passivation functional group, the passivation functional group interacts with the cutting edge, and a passivation film is formed on the cutting edge. The invention further provides the crystalline silicon solar cell piece prepared according to the preparation method and a solar cell comprising the crystalline silicon solar cell piece. According to the invention, the passivation solution is coated after annealing, so that the passivation layer is more stable, the passivation effect is improved, the process is simplified, and the cost is saved.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a preparation method thereof, and a photovoltaic module, and the preparation method comprises the steps: providing a substrate comprising a first surface and a second surface; forming a hydrophobic layer covering the second surface; forming an aluminum oxide lamination layer on the first surface by adopting at least two atomic layer deposition process steps; the step of forming the aluminum oxide lamination comprises the following steps: placing a substrate covered with a hydrophobic layer in a reaction chamber, and introducing water vapor and trimethylaluminum into the reaction chamber in any circular deposition step, preset process parameters of any circulation deposition step in the (N + 1) th atomic layer deposition process are controlled to be lower than preset process parameters of any circulation deposition step in the Nth atomic layer deposition process, and the preset process parameters comprise at least one of water vapor flow, trimethylaluminum flow, water vapor introduction duration and trimethylaluminum introduction duration. The embodiment of the invention is at least beneficial to avoiding back surface winding plating and improving the film layer quality of the aluminum oxide laminated layer.

The embodiment of the invention provides a solar cell, a manufacturing method thereof and a photovoltaic module. The solar cell comprises a substrate, a chemical passivation layer, a first aluminum oxide layer, a barrier layer and a second aluminum oxide layer. The chemical passivation layer is located on the first side of the substrate and used for passivating the surface of the substrate; the first aluminum oxide layer is located on the surface, away from the substrate, of the chemical passivation layer and used for providing hydrogen atoms to the surface of the substrate; the barrier layer is located on the surface of the first alumina layer away from the chemical passivation layer; the second aluminum oxide layer is located on the surface, away from the first aluminum oxide layer, of the barrier layer and used for field passivation of the surface of the substrate; the first aluminum oxide layer contains negative charges and has a first charge density, the second aluminum oxide layer contains negative charges and has a second charge density, and the second charge density is larger than the first charge density. The surface passivation effect of the solar cell provided by the embodiment of the invention can be improved, so that the efficiency of the solar cell is improved.

The invention provides a hybrid passivation back contact battery and a preparation method thereof. The battery comprises a silicon wafer; a third tunneling oxide layer, a first amorphous silicon layer and a first anti-reflection layer are sequentially arranged on the front surface of the silicon wafer; first polishing areas and second polishing areas are alternately arranged on the back surface of the silicon wafer; a first semiconductor layer is at least arranged on the first polishing area; a second semiconductor layer is at least arranged on the second polishing area; a texturing area is arranged between the first polishing area and the adjacent second polishing area; a fourth tunneling oxide layer, a second amorphous silicon layer and a second antireflection layer are sequentially arranged on each of the first polishing region, the texturing region and the second polishing region; the refractive index of the first amorphous silicon layer is 2.2-4, and the refractive index of the first amorphous silicon layer is gradually reduced in the direction from the third tunneling oxide layer to the first anti-reflection layer. According to the invention, the passivation effect is improved, so that the battery efficiency is improved. In addition, the passivation layers on the front surface and the back surface can be deposited and formed in the same tubular PECVD, so that the process steps are simplified, and the equipment cost is reduced.

The invention relates to the technical field of solar cells, and particularly discloses a TBC solar cell piece, a cell assembly and a photovoltaic system, comprising a silicon substrate having a light receiving surface and a backlight surface opposite to each other, and a doping layer arranged on the backlight surface and comprising N-type doping regions and P-type doping regions which are alternately arranged at intervals, a tunneling passivation layer is arranged between the silicon substrate and the doping layer, the tunneling passivation layer comprises an N-region passivation layer correspondingly arranged on the inner side of the N-type doping region and a P-region passivation layer correspondingly arranged on the inner side of the P-type doping region, the N-region passivation layer is provided with an N-region hole with an opening facing the doping layer, the P-region passivation layer is provided with a P-region hole with an opening facing the doping layer, and the N-region hole and the P-region hole are communicated with each other. The total number of the P-region holes is greater than the total number of the N-region holes. The tunneling passivation layer structure can cooperate with the tunneling characteristic of the tunneling passivation layer through the newly added hole transfer channel, and can balance carriers, thereby effectively improving the transmission efficiency of the carriers, reducing the sensitivity and dependence of carrier transmission on the ultrathin thickness of the tunneling passivation layer, and improving the transmission efficiency of the tunneling passivation layer. The thickness of the tunneling passivation layer can be thicker, so that a better interface passivation effect can be obtained.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a multi-layer gradient textured structure and a manufacturing method and application of the back contact cell. A second semiconductor opening region further comprises a first platform region and a second platform region which are sequentially arranged from the edge to a non-transition region in the width direction; the first slope area is arranged between the first platform area and the second platform area; the second slope area is arranged between the second platform area and the non-transition area; wherein the first platform area is a polished surface, the second platform area is a pyramid suede surface, the heights of the first platform area, the second platform area and the non-transition area are gradually reduced, and the first platform area, the first inclined surface area, the second platform area, the second inclined surface area and the non-transition area continuously form a multi-layer gradient suede surface structure. According to the invention, the situation that the second semiconductor layer in the second semiconductor opening region cannot well coat the surface and the side surface due to a relatively large height difference can be avoided, and the carrier recombination rate at the boundary is reduced, so that the open-circuit voltage and the cell conversion efficiency are improved.

The utility model relates to the field of perovskite cell related equipment, and provides a passivated perovskite film coating device and a perovskite cell preparation system. The passivated perovskite film coating device comprises a base table, an air knife mechanism, a nitrogen cylinder and an additive atomizer, a sliding mechanism is arranged on the base table, the air knife mechanism is slidably installed on the base table through the sliding mechanism, the nitrogen cylinder is provided with a nitrogen pipe, the additive atomizer is provided with an additive air pipe, and the top of the air knife mechanism is connected with a mixed air inlet pipe. An air outlet of the nitrogen pipe and an air outlet of the additive gas pipe are respectively communicated with the mixed gas inlet pipe. According to the passivated perovskite film coating device, the additive atomizer is used for atomizing a solution in which an additive is dissolved so that the solution can become gas, nitrogen and the atomized gas of the additive are mixed and then discharged from the air knife lip, and in the process that the air knife mechanism conducts blowing treatment on a liquid film, the liquid film can be blown out through the air knife. And doping of the additive to the perovskite or passivation treatment of the passivator to the surface of the perovskite is completed.

The utility model relates to coating equipment. The coating equipment comprises a body part, an air inlet part, a carrier and a heating part, the body part comprises an inner shell and an outer shell, the inner shell is located in the outer shell, an inner cavity of the inner shell forms an inner cavity, and an outer cavity is formed between the inner shell and the outer shell; the gas inlet part is used for introducing process gas into the inner cavity, and the heating part is used for heating the inner cavity; the carrier is arranged in the inner cavity, the carrier is provided with a mounting cavity and a first opening, the mounting cavity is used for mounting stacked substrates, the to-be-coated surface of each substrate can be exposed from the first opening, and the heating part comprises a plurality of heating units arranged on the peripheral side of the first opening. The coating equipment can be used for coating and passivating the cutting surface of a substrate such as a battery piece, and can also be used for annealing the cutting surface, so that the passivation effect is ensured, the overall structure is simplified, the cost is reduced, and the production efficiency can be effectively improved.

The invention belongs to the technical field of coating preparation, and discloses a nanoparticle modified heavy anti-corrosion material as well as a preparation method and application thereof. The nano-particle modified heavy anti-corrosion material comprises the following components in percentage by weight: 60-80% of a component A, 10-25% of a component B and 10-30% of a first solvent, wherein the total percentage is 100%; the component A comprises the following components in percentage by weight: 45%-60% of a resin solution, 0.5%-5% of graphene oxide, 8%-20% of polyaniline nanofibers, 0.5%-5% of carbon nanotubes, 0.6%-40% of a filler, 0.3%-3% of an additive and 8%-12% of a cosolvent, and the total percentage is 100%; the component B comprises the following components in percentage by weight: 40-60% of polyamide and 40-60% of a second solvent, wherein the total percentage is 100%. The nano-particle modified heavy anti-corrosion material prepared by the invention has excellent salt mist resistance, acid resistance, alkali resistance, good adhesive force and impact resistance.

The invention relates to the technical field of TOPCon solar cells, in particular to a TOPCon photovoltaic cell structure and a preparation method thereof, and the method comprises the steps: preparing a local patterning mask on a tunneling oxide layer through nanometer imprinting; and etching by using a high-selectivity etching agent and depositing a passivation layer, forming a local passivation structure on the polycrystalline silicon substrate, removing a mask material, depositing a polycrystalline silicon emitter layer and preparing an electrode, and forming a TOPCon photovoltaic cell structure. According to the invention, the local patterning mask is prepared on the tunneling oxide layer by using the nano imprinting technology, the high-selectivity etching solution is combined to form the local patterning structure, and finally the passivation layer material is deposited in the etched area to form the local patterning passivation layer, so that the contact interface is optimized, the recombination current between the front electrode and the silicon substrate is reduced, and the performance of the device is improved. Therefore, the open-circuit voltage and the filling factor of the cell are improved, and the photoelectric conversion efficiency is improved.

The invention belongs to the technical field of perovskite solar cell interface modification, and particularly provides a perovskite passivation material, a passivation unit and a perovskite cell. The perovskite passivation material provided by the invention comprises a vinyl thiophene compound. According to the invention, the perovskite layer is passivated and modified through the vinyl thiophene compound, and the passivation layer has a good passivation effect and effectively passivates defects in the perovskite layer; and high stability is achieved, the long-term effectiveness of the passivation layer is guaranteed, and the passivation effect can be stably kept for a long time. The passivation layer can greatly improve the photoelectric conversion efficiency of the device, and provides powerful support for the development of the fields of perovskite solar cells and the like.

The invention belongs to the technical field of solar cells, and provides a passivation method of a perovskite layer and a preparation method of a perovskite solar cell. The passivation method comprises the following steps: preparing a perovskite layer by adopting a perovskite precursor solution containing 3-methylsulfonyl propylamine hydrochloride, and carrying out bulk phase passivation on the perovskite layer, the concentration of the 3-methylsulfonyl propylamine hydrochloride in the perovskite precursor solution is 1 to 3 mg / mL; carrying out surface passivation on one surface of the perovskite layer by adopting a surface passivation agent containing 3-methylsulfonyl propylamine hydrochloride; the concentration of the 3-methylsulfonyl propylamine hydrochloride in the surface passivating agent is 1 to 3 mg / mL. According to the passivation method, 3-methylsulfonyl propylamine hydrochloride is introduced as an additive and a surface passivator, deep energy level defects on the bulk phase and the surface of a perovskite layer can be passivated, and a better passivation effect is achieved, so that the stability and the comprehensive performance of the perovskite solar cell can be further improved.

The invention discloses cutter grinding and passivating equipment and a passivating process thereof, and belongs to the technical field of cutter machining, the cutter grinding and passivating equipment comprises a material taking device and a placing frame, the material taking device comprises a material taking disc, and a plurality of material taking assemblies are arranged on the material taking disc; the placing rack comprises a first placing rack and a second placing rack, and a plurality of placing holes are formed in the first placing rack and the second placing rack; the material taking device is rotationally arranged between the first containing frame and the second containing frame, and material taking assemblies on the material taking disc are correspondingly matched with the containing holes. The cutter on the material taking assembly is placed in a slurry barrel, the cutting edge of the cutter is immersed in slurry, the cutter and the stirring blade are rotated for the first time, the rotating direction of the cutter is the direction opposite to the cutting edge, and the rotating direction of the stirring blade is the direction along the cutting edge; the rotating direction of the cutter is the direction along the cutting edge, and the rotating direction of the stirring blade is the direction opposite to the cutting edge.

The invention discloses a back contact cell, a back contact cell string and a solar cell module, the back contact cell comprises first doped regions, second doped regions and isolation regions, the first doped regions, the second doped regions and the isolation regions are arranged on the back surface of a silicon substrate, the first doped regions and the second doped regions are alternately arranged, the isolation regions are arranged between the first doped regions and the second doped regions, and the isolation regions are arranged between the first doped regions and the second doped regions. The doping types of the first doped region and the second doped region are opposite; the side wall, close to the isolation region, of the first doped region is recessed inwards to form a first recessed region, and the first recessed region comprises a plurality of first recessed units which are connected in sequence. According to the invention, carrier transmission between the first doped region and the second doped region can be improved.

The invention relates to a preparation method of a solar cell, the solar cell and a photovoltaic module. The preparation method of the solar cell comprises the steps that a substrate is provided, the substrate is provided with a first surface and a second surface which are oppositely arranged in the thickness direction perpendicular to the substrate, and at least one of the first surface and the second surface is defined as a target surface; forming a first tunneling layer, a first doped semiconductor layer, a second tunneling layer and a second doped semiconductor layer which are stacked on the target surface of the substrate in the direction away from the substrate to obtain a passivation structure; a plurality of holes are formed in the second tunneling layer; and performing annealing treatment on the passivation structure to increase the size of the hole in the direction parallel to the reference plane. According to the preparation method of the solar cell, the passivation performance of the solar cell can be improved, and the contact performance of the solar cell can also be improved.

The invention provides a perovskite thin film gas passivation method and a laminated solar cell, and belongs to the technical field of perovskite crystal silicon laminated solar energy, a hot injection gas passivation process is adopted to improve the passivation effect, a prepared perovskite thin film is placed in a closed container, and the perovskite thin film is subjected to gas passivation and heating to obtain the perovskite thin film. According to the invention, defects existing in the perovskite thin film can be passivated, sites where defects are possibly generated in the perovskite at high temperature can be passivated, internal defects of the thin film are reduced, the phase separation phenomenon of broadband gap perovskite is effectively inhibited, and the photoelectric conversion efficiency and stability of the crystalline silicon / perovskite laminated solar cell are improved.