43results about How to "Improve passivation effect" patented technology

The invention relates to a back contact cell, a preparation method of the back contact cell and a photovoltaic module. The substrate has a first surface including first regions and second regions arranged alternately. The tunneling layer is arranged in the first region, and the first doped semiconductor layer is arranged on the side, away from the substrate, of the tunneling layer. The doped field region is located in the first region, and the doped field region and the first doped semiconductor layer are both provided with first doped elements. The second region is provided with a groove which is recessed relative to the first region, one part of the amorphous layer is arranged on the second region, and the other part of the amorphous layer is arranged on the side, away from the substrate, of the first doped semiconductor layer. The second doped semiconductor layer is arranged on one side, far away from the substrate, of the amorphous layer and is provided with a second doped element which is different from the first doped element in doping type. The depth of the doped field region is smaller than that of the groove. Therefore, the passivation performance of the first region can be improved, the passivation performance of the second region can also be considered, and the passivation performance of the back contact battery can be improved on the whole.

This invention belongs to the field of heavy metal pollution remediation technology, and relates to the preparation and application of a cadmium passivating agent for weakly alkaline soil. The weakly alkaline soil cadmium passivating agent mainly comprises the following components by weight: 30-50 parts of a mineral complex, 40-60 parts of a bioactive component, and 5-15 parts of an auxiliary stabilizer. The mineral complex includes natural sepiolite, calcium-based bentonite, and a polyether-polyester diblock copolymer; the bioactive component includes microbial agents, phosphorus-modified biochar, lecithin, and phosphatidylserine; and the auxiliary stabilizer includes nano-hydroxyapatite and a chitosan-grafted polyaspartic acid complex. This weakly alkaline soil cadmium passivating agent exhibits excellent remediation effects on cadmium in contaminated soil, effectively preventing or reducing the entry of cadmium and other heavy metals into the food chain, and has significant market potential.

The application discloses a passivation treatment method for a metal surface, which comprises the following steps: cleaning the metal surface; immersing the cleaned metal in a hydrogen peroxide solution for passivation treatment; taking out the passivated metal from the hydrogen peroxide solution and rinsing the metal with deionized water; immersing the rinsed metal in a sodium hydroxide solution for neutralization treatment; taking out the neutralized metal from the sodium hydroxide solution and rinsing the metal with deionized water; and drying the rinsed metal.

The invention relates to the technical field of solar cells, and provides a back contact cell, a cell assembly and a photovoltaic system, the back surface of a silicon wafer of the back contact cell is provided with a first region and a second region which are alternately arranged at intervals, the first region and the second region are separated by a spacer region, and a first polarity doping layer is stacked in the first region. The second polarity doping layer is arranged in the second region in a stacked mode, and the second polarity doping layer and the first polarity doping layer are separated through a spacer region. A plurality of first isolated doping parts are arranged in the spacer region, and the first isolated doping parts are not in contact with the first polarity doping layer and the second polarity doping layer. Therefore, the plurality of independent first isolated doping parts are arranged in the spacer region, and the first isolated doping parts can form floating junction passivation in the spacer region, so that the passivation effect of the spacer region can be improved, the collection rate of carriers can be improved, and the efficiency of the back contact battery is improved.

This application relates to the field of solar cell technology, and more particularly to a solar cell and its fabrication method, and a photovoltaic module. The solar cell includes a silicon substrate, a patterned back-side doped layer, and a back-side passivation antireflection layer. The silicon substrate includes a back side and a front side disposed opposite to each other. The back-side doped layer is partially disposed on the back side, and the area where the back-side doped layer is disposed is a doped region. The area on the back side other than the doped region includes a back-side light-trapping region, which has multiple top-etched light-trapping structures, and the bottom surface of the light-trapping structures is located on the side closer to the front side. The back-side passivation antireflection layer is disposed on the side of the back-side doped layer facing away from the silicon substrate and on the back-side light-trapping region. The solar cell of this application utilizes top-etched light-trapping structures to enhance the back-side's ability to absorb and utilize light while also achieving a passivation effect, thereby effectively improving the performance of the solar cell.

This application provides a solar cell and a method for fabricating the same. The solar cell includes: a substrate having a first surface, the first surface being located on the same side as the back surface of the solar cell, the solar cell including a first region and a second region on the back surface; a tunneling oxide layer disposed on one side of the first surface; a first doped layer disposed on one side of the first surface and located within the second region, and on the surface of the tunneling oxide layer facing away from the substrate, the first doped layer having a first doping concentration; a second doped layer disposed on the side of the first doped layer away from the first surface and located within the second region, the second doped layer having a second doping concentration lower than the first doping concentration; and a third doped layer disposed on one side of the first surface, the third doped layer having a third doping concentration higher than the first doping concentration. This application can reduce parasitic absorption of light, facilitate ion transport, and further improve cell performance.

The application relates to the technical field of solar cells, in particular to a laminated solar cell. Embodiments of the application provide a laminated solar cell, which comprises, from the front surface to the back surface, a perovskite top cell, an interface layer and a crystalline silicon bottom cell which are sequentially stacked; the crystalline silicon bottom cell comprises, from the front surface to the back surface, a first passivation layer, a second passivation layer, a silicon substrate, a silicon oxide layer, a doped polycrystalline silicon layer, a transparent conductive layer and a back surface metal electrode which are sequentially stacked; the first passivation layer comprises at least one of a doped amorphous silicon layer, a doped nanocrystalline silicon layer or a doped microcrystalline silicon layer; and the second passivation layer is an intrinsic amorphous silicon layer. The laminated solar cell provided by the application has almost no parasitic absorption in the wavelength range of more than 750 nm, so that the laminated solar cell has good passivation effect and current gain, and the photoelectric conversion efficiency of the laminated solar cell is improved.

The utility model relates to a solar cell. The above-mentioned solar cell includes the monocrystalline silicon wafer of first doped type and the first intrinsic amorphous silicon layer and the first microcrystalline silicon layer of second doped type of laminated setting on monocrystalline silicon wafer, wherein, the first intrinsic amorphous silicon layer includes first sublayer and second sublayer, and the first sublayer is between the second sublayer and the first microcrystalline silicon layer;Second sublayer contains microcrystal, and the crystallization rate of second sublayer is 1%~5%, and the thickness of second sublayer is 1.3nm~2.5nm, and second sublayer can enhance the contact effect with the first microcrystalline silicon layer, reduce the series resistance of battery, and improve the filling factor and other performance parameters of battery.

The present application relates to the technical field of adsorption material preparation and heavy metal treatment, and particularly relates to a silicate-chloroapatite composite material, a preparation method and application thereof. The present application proposes a mechanism of "mineral phase reconstruction and functional component synergistic construction of high-density and high-energy adsorption sites", utilizes the characteristic of coexistence of multiple mineral components, and through synergistic induction of calcium source and phosphorus source, promotes the original mineral phase to be reconstructed into an amorphous porous silicate matrix with higher activity (adsorption site energy is higher), and in-situ generates chloroapatite with strong immobilization capacity for heavy metals. This not only realizes mineral structure activation and porous structure construction, but also forms a synergistic effect of silicate and chloroapatite in the adsorption process: chloroapatite and heavy metals such as lead form stable phosphorus-chlorine-lead ore solidification products, and the reconstructed silicate and calcium ions provide efficient ion exchange sites, improve the site energy of the adsorption sites, and thus improve the removal efficiency of heavy metals in a wide concentration range.

The application provides a solar cell and a photovoltaic module, and belongs to the technical field of semiconductors. The solar cell comprises a silicon substrate, wherein the surface of the silicon substrate comprises: a plurality of first recessed regions, each extending into a strip shape along a first direction and being spaced apart along a second direction intersecting the first direction; and a plurality of first protruding regions, the first protruding regions being adjacent to the first recessed regions. The first recessed regions and the first protruding regions of the surface of the silicon substrate form a first texture structure, while ensuring light trapping effect, due to the lack of corner structures of a traditional tower base structure, the film layer is more uniformly deposited on the silicon substrate, and the quality of the deposited film layer is improved.

The invention discloses a preparation method of a TBC solar cell. The preparation method comprises the following steps: alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer; carrying out boron diffusion conversion to obtain P-type polycrystalline silicon; laser patterning is prepared for N region deposition; acid pickling and alkali polishing; sequentially depositing a silicon dioxide tunneling oxide layer and an intrinsic amorphous silicon layer again; carrying out phosphorus diffusion conversion to obtain N-type polycrystalline silicon; removing PSG from the front side; patterning to expose the N-type polycrystalline silicon region; performing alkali texturing treatment to form a pyramid structure, and performing rounding treatment; pickling the back surface and reserving the polycrystalline silicon layer; depositing an aluminum oxide passivation layer and a silicon nitride passivation layer on two sides; laser trepanning is carried out to expose the P-type polycrystalline silicon region and the N-type polycrystalline silicon region; metallizing to form a precise electrode; and performing light injection to obtain the TBC solar cell. According to the TBC solar cell provided by the invention, BSGamp; the PSG is used as a mask, and the laser patterning / corrosion slurry is used for replacing photoetching and other mask materials, so that the compatibility with the existing TOPCON production line is high.

High-performance zinc plating passivation apparatus. This relates to the field of zinc plating processing technology. It includes a tank containing passivation liquid, a trolley mounted above the tank with a pair of lifting ropes, each rope corresponding to one end of a workpiece; a pair of pushing mechanisms at the bottom of the tank, each mechanism including a pushing plate and a hydraulic cylinder, the hydraulic cylinder located on the outer side of the bottom of the tank, and the pushing plate located on the inner side of the bottom of the tank, the hydraulic cylinder driving the pushing plate to reciprocate vertically; the workpiece is placed on the pair of pushing plates, the displacement directions of the pair of pushing plates being opposite. This application improves the contact effect between the workpiece and the passivation liquid by pushing the workpiece with the pushing plates, thereby improving the passivation effect.

The application relates to the photovoltaic technology field, in particular to a back contact cell, a preparation method thereof, a back contact laminated cell and a photovoltaic module. The back contact cell comprises a substrate and a first passivation structure, and a first surface of the substrate is sequentially provided with a first hydrogenated amorphous silicon oxide layer, a second hydrogenated amorphous silicon oxide layer and a P-type doped layer. The oxygen doping ratio of the first hydrogenated amorphous silicon oxide layer is X1, the oxygen doping ratio of the second hydrogenated amorphous silicon oxide layer is X2, and X1 and X2 satisfy X1>X2. By arranging the laminated structure with the oxygen doping ratio gradient design, the asymmetric carrier transport channel can be formed, the blocking effect on the electrons and the transmission effect on the holes can be improved, the selective transmission of the carriers can be realized, the parasitic absorption at the interface can be reduced, the probability of the repeated absorption of the light by the substrate can be increased, the open-circuit voltage and the short-circuit current of the back contact cell can be improved, and the photoelectric conversion efficiency of the back contact cell can be improved.

This disclosure relates to the field of solar cell manufacturing technology, and discloses a method for fabricating a solar cell and the solar cell itself. The fabrication method includes: providing a substrate layer with a first textured surface; forming an anti-reflection passivation layer on the surface of the substrate layer, the anti-reflection passivation layer conformally covering the first textured surface; laser-treating the anti-reflection passivation layer to form a second textured surface, the second textured surface including multiple micro-recesses; and forming a repair passivation layer on the laser-treated surface of the anti-reflection passivation layer to repair laser damage introduced by the laser treatment, the repair passivation layer conformally covering the second textured surface. This disclosure can ensure the passivation effect of the cell while improving the light-trapping effect of the cell surface.

The invention relates to the technical field of permanent magnet preparation, and particularly discloses a high-temperature-resistant neodymium-iron-boron magnet and a preparation method thereof. The high-temperature-resistant neodymium-iron-boron magnet comprises the following elements in percentage by mass: 17.4%-19.5% of Nd, 0.66%-0.72% of B, 38.37%-41.19% of Fe, 0.36%-4.8% of Dy, 0.18%-0.3% of Nb, 0.18%-0.3% of Al, 0.03%-0.09% of Cu, 29.1%-34.8% of an alloy rapid hardening sheet and the balance of unremovable impurities, wherein the alloy rapid hardening sheet contains Pr, Tb, Bi and Sn; the preparation method comprises the following steps: grinding the surface of an alloy rapid hardening sheet to be bright, mixing the alloy rapid hardening sheet with a pretreated magnet block, adding zirconium oxide balls, putting into a reaction kettle of a rotary diffusion furnace, vacuumizing the reaction kettle, introducing argon, rotating at the rotating speed of 4-6r / min, keeping the temperature at 700-704 DEG C for 3-7h, and carrying out rotary diffusion, so as to obtain the zirconium oxide-based composite material. And then carrying out heat preservation at 850-950 DEG C for 2-4 hours for high-temperature diffusion and heat preservation at 450-550 DEG C for 2-4 hours for tempering heat treatment by using a vacuum tube furnace in a vacuum environment. The high-temperature-resistant neodymium-iron-boron magnet has the advantage that the defect that heat resistance of a conventional neodymium-iron-boron magnet is still insufficient is overcome.

This disclosure discloses a P-type tunneling passivation structure and its preparation method, as well as a solar cell and its preparation method, belonging to the field of solar cell technology. The boron-doped polycrystalline silicon layer in the P-type tunneling passivation structure provided by this disclosure has a high crystallinity and better passivation effect, which is beneficial for improving carrier mobility, reducing contact resistance, and thus improving cell efficiency.

This application relates to solar cells, sliced ​​solar cells, tandem solar cells, and photovoltaic modules. The solar cell includes: a substrate having a first surface and a second surface disposed opposite each other in the thickness direction; a groove structure formed on the first surface, the groove structure including a bottom surface recessed inward relative to the first surface, a side surface extending from the first surface toward the bottom surface in the thickness direction, and an inclined surface extending obliquely from one end of the side surface away from the first surface and connected to the bottom surface, the side surface being perpendicular to the bottom surface, the angle between the inclined surface and the bottom surface being 32° to 48°, and the ratio of the height of the side surface to the height of the inclined surface in the thickness direction being 2:1 to 11:1; and a textured region formed on the first surface, the textured region including a first protrusion located at the edge of the groove structure, the first protrusion being a truncated pyramid. This application can improve photoelectric conversion efficiency.

This invention provides a solar cell and its fabrication method. The passivation layer of the solar cell is a transparent conductive layer, which comprises a dense conductive layer and a mesoporous conductive layer stacked sequentially. The mesoporous conductive layer is in contact with the electrode. By replacing the passivation layer with a dense conductive layer and a mesoporous conductive layer stacked sequentially, and ensuring the mesoporous conductive layer is in contact with the electrode, this invention guarantees electron transport, optimizes defect recombination in the metal-nonmetal contact area, and increases the contact area of ​​the electrode in the structure. It features a simple structure, ease of industrial production, and structural stability.

The invention discloses an electron passivation contact structure, a preparation method thereof and a solar cell, the electron passivation contact structure is located on a light receiving surface and / or a backlight surface of a silicon substrate, the electron passivation contact structure comprises a tunneling layer and a SnO2-doped layer which are stacked in sequence, and the SnO2-doped layer is boron-doped and / or aluminum-doped. According to the electron passivation contact structure, surface passivation and electron selective transmission can be achieved at the same time, the doped SnO2 layer can avoid the optical parasitic absorption problem caused by a silicon thin film, and the doped SnO2 layer with the optimized thickness is expected to obtain low contact resistance and excellent transverse conductivity; in addition, the passivation performance of the electron passivation contact structure can be further improved by combining the hydrogen-containing cover layer, and the hydrogen-containing cover layer can be selectively reserved or removed according to the conduction type and the device structure.

This invention relates to a method and system for fabricating an ultra-small AWG chip, comprising: using ICP-VD technology on a silicon substrate to controllably grow a low-stress, low-optical-absorption silicon nitride thin film by adjusting plasma power and gas flow rate; covering the silicon nitride thin film with a hybrid mask, and determining a reactive ion etching combination with a primary etching gas and an auxiliary passivation gas according to a target volume ratio; etching the silicon nitride thin film based on the reactive ion etching combination to form a silicon nitride waveguide structure with a sidewall roughness less than a preset roughness threshold; adjusting the thickness and width of the waveguide to achieve a design goal of ultra-thin and ultra-wide waveguide compatible with single-mode transmission characteristics and low bending loss, and designing the bending transition section of the waveguide as a gradually curved structure by transforming optical principles; integrating the designed waveguide into the AWG chip in a preset array configuration, and using a Rowland circle overlapping lithography to compress the overlapping area between the input and output waveguides in the array.

This application relates to the photovoltaic field, providing a solar cell, a photovoltaic module, and a method for fabricating a solar cell. The solar cell includes: a substrate having a front side and a back side, the back side including a textured region and a flat region adjacent to the textured region, the textured region having a doped surface field, and the doped surface field containing a doped element, which is N-type or P-type; a tunneling dielectric layer located on the flat region of the back side of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer away from the back side of the substrate, the doped conductive layer containing a doped element, the type of which is the same as the type of which is doped in the doped surface field; and a back electrode, a portion of the bottom surface of the back electrode located within the doped conductive layer and in contact with the doped surface field, which can at least reduce the contact resistance of the solar cell.

The utility model discloses a solar cell and photovoltaic module, solar cell includes: silicon substrate has opposite first surface and second surface to and the at least one cutting surface of connecting first surface and second surface, protection layer covers at least cutting surface and covers part first surface and / or part second surface. Solar cell and photovoltaic module of the utility model can enhance the side passivation of solar cell, reduce the side electric leakage risk, improve the battery efficiency.

This invention provides a solar cell and a photovoltaic module, belonging to the field of semiconductor technology. The solar cell includes a semiconductor substrate, which includes opposing first and second surfaces; and a plurality of first current collector electrodes disposed on the first surface of the semiconductor substrate. The plurality of first current collector electrodes extend along a first direction and are spaced apart along a second direction. Each first current collector electrode includes a plurality of first contact portions and a first transmission portion. The plurality of first contact portions are spaced apart along the first direction. The first transmission portion is disposed on the side of the first contact portion away from the semiconductor substrate and is in contact with and connected to the plurality of first contact portions, extending along the first direction. In at least one pair of adjacent first current collector electrodes, the spacing between at least one pair of adjacent first contact portions in the first direction is less than or equal to the spacing between the pair of adjacent first current collector electrodes in the second direction.

This application relates to the photovoltaic field, providing a back-contact solar cell and its fabrication method, a tandem cell, and a photovoltaic module. The back-contact solar cell includes: a substrate comprising a front side and a back side, the back side comprising a first region and a second region; a tunneling oxide layer, a first doped polycrystalline silicon layer, and a first passivation structure stacked in the first region, the first passivation structure including a first porous layer having multiple pores; a hydrogenated silicon oxide structure, a doped conductive layer, and a transparent conductive layer stacked in the second region, the doping type of the doped conductive layer being different from that of the first doped polycrystalline silicon layer; a first electrode located on the side of the first passivation structure away from the first doped polycrystalline silicon layer and electrically connected to the first doped polycrystalline silicon layer; and a second electrode located on the side of the transparent conductive layer away from the doped conductive layer and electrically connected to the doped conductive layer. The solar cell provided by this application can at least improve the photoelectric conversion efficiency of the solar cell.

The utility model provides a kind of solar cell belongs to solar cell technical field, comprising: cell piece, passivation film layer is arranged on the front and / or back of cell piece, the thickness of passivation film layer exists thickness difference in the middle region of solar base and its edge region.The passivation film layer of thickness gradually changing is used in the front and / or back of cell of the application.When the film thickness of cell middle region is less than the film thickness of edge region, the incident light utilization of cell middle region can be increased while the passivation effect of cell edge region is enhanced.When light source mainly irradiates cell edge region, the amount of light of middle region is less, then the change trend that passivation film layer thickness in middle region is greater than edge region is used, to ensure the high incident light utilization of edge and the best passivation effect of middle region, improve the photoelectric conversion efficiency of overall cell.

This application relates to a low-pressure phosphorus diffusion deposition method for TOPCon batteries. The method involves placing a processed silicon wafer into the internal pipes of a diffusion furnace for high-pressure and low-pressure vacuum treatment; maintaining a constant pressure within the furnace pipes, heating the furnace pipes, and controlling the large and small nitrogen inlet pipes of the diffusion furnace to purge the internal environment of the furnace pipes; maintaining a constant temperature within the furnace pipes, reducing the pressure within the furnace pipes to 118-122 mbar, and controlling the oxygen inlet pipe of the diffusion furnace to introduce oxygen into the furnace pipes for oxidation; maintaining a constant pressure within the furnace pipes, controlling the large nitrogen inlet pipe of the diffusion furnace to introduce nitrogen, the small nitrogen inlet pipe to introduce nitrogen carrying phosphorus oxychloride, and the oxygen inlet pipe to introduce oxygen for stepwise power supply; and heating and pressurizing the furnace pipes, controlling the large and small nitrogen inlet pipes of the diffusion furnace to introduce nitrogen, and controlling the oxygen inlet pipe of the diffusion furnace to introduce oxygen for high-temperature propulsion.

The invention relates to the technical field of compound synthesis, in particular to cytosine nucleoside compounds as well as a preparation method and application thereof. The structural general formula of the cytosine nucleoside compound is as shown in formula I in the specification. On the basis of a cytosine nucleoside structure, a saturated six-membered nitrogen heterocyclic structure with biological activity is introduced into the cytosine nucleoside structure, a series of novel cytosine nucleoside compounds are synthesized, and the compounds have a good inhibition effect on plant viruses and can be used for preparing plant viruses. The compound has a good inhibition effect on plant virus diseases such as tobacco mosaic virus (TMV) and the like.

This application relates to a passivation device, which includes a passivation tank, a frame, and a drum. A limiting post is provided on the drum, and a slider slides up and down on the limiting post. A stirring rod is hinged to the slider, and a stirring rod is hinged to the limiting post. An elastic element is provided on the limiting post, and a positioning component is provided on the stirring rod. After a workpiece is placed into the receiving tank, the slider is moved so that the hinged portions of the stirring rods extend away from the limiting post. When the drum rotates, the extended portions of the stirring rods agitate the workpiece in the receiving tank, thereby separating the adhered workpieces and improving the passivation effect. When the drum is not in use, the positioning state of the slider is released. Under the action of the elastic element, the slider moves the hinged portions of the stirring rods closer to the limiting post, reducing the risk of damage to the stirring rods due to impact when the workpiece is poured in.

This invention belongs to the field of photovoltaic materials technology and discloses a mixed-halogen wide-bandgap perovskite thin film, its preparation method, and its application. The preparation method includes the following steps: first, dissolving the raw materials for preparing the mixed-halogen wide-bandgap perovskite and poly(4-hydroxystyrene) in an organic solvent to obtain a mixed-halogen wide-bandgap perovskite precursor solution; then, coating the mixed-halogen wide-bandgap perovskite precursor solution onto a conductive substrate, followed by annealing to form a mixed-halogen wide-bandgap perovskite thin film. This invention selects a specific P4VP polymeric additive containing hydroxyl functional groups. Due to its polymer properties, it can in-situ encapsulate the perovskite grain boundaries during annealing, passivating them; the reducing properties of the hydroxyl groups can reduce molecular iodine generated at the grain boundaries to iodide ions, and inhibit iodine volatilization and iodine vacancy formation, weakening the positive feedback between iodide oxidation and halide segregation, thereby significantly improving the photoelectric performance of the mixed-halogen perovskite thin film and its devices.

The invention relates to a dipyrrolothiophene compound, a photoelectric device and photoelectric equipment. The structural formula of the dipyrrolothiophene compound is shown in the specification, in the formula, R1, R2, R3, R4, R5 and R6 are respectively and independently selected from one or a combination of more of hydrogen, an energy level regulating group, a conjugate group, a solubility regulating group, an anchoring group and a polar group, the molecule takes a dipyrrolothiophene ring as a core to form a symmetrical planar tricyclic system, and a rigid planar structure without obvious distortion is formed. The rigidity derives from condensed ring conjugated strong bond energy, thermal vibration distortion of molecular configuration is effectively avoided, and a stable conjugate channel is provided for charge transfer. And the prepared photoelectric device and photoelectric equipment are high in photoelectric conversion efficiency.