Crystalline silicon solar cell and preparation method thereof

Abstract

The present invention provides a crystalline silicon solar cell and a preparation method thereof. The crystalline silicon solar cell comprises: an N-type silicon substrate; a tunneling oxide layer formed on the back surface of the N-type silicon substrate; and a polysilicon layer formed on the tunneling oxide layer, wherein the polysilicon layer comprises alternatively distributed N+ polysilicon areas and P+ polysilicon areas, and a space is arranged between each neighboring N+ polysilicon area and P+ polysilicon area. The tunneling oxide layer, the N+ polysilicon areas and the P+ polysiliconareas form a passivation contact structure on the back surface of the N-type silicon substrate. According to the crystalline silicon solar cell and the preparation method thereof, the recombination rate of the back surface of a battery is effectively reduced, and the open circuit voltage of the battery is improved. Compared with the conventional back knot and back contact solar cells, the doping process of the front surface is saved, the battery preparation process is simplified, the absorption loss of light is reduced, and thus the solar cell can facilitate the improvement of battery performance and the reduction of cost.

Description

technical field [0001] The present disclosure relates to the technical field of solar cells, and in particular, to a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] As a device that can directly convert solar energy into electrical energy, solar cells have attracted more and more attention. Improving the conversion efficiency of solar cells and reducing the production cost of the cells is the goal that the industry is constantly pursuing and the key to improving its own competitiveness. [0003] In terms of high-efficiency solar cells, many foreign scientific research institutions and enterprises have carried out a lot of research, and developed many high-efficiency solar cells with new structures, such as grooved buried gate, selective emitter, crystalline silicon heterojunction (HIT), back junction Structures such as back contact structure (IBC), the current successful high-efficiency battery structures include HIT and IBC, e...

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Problems solved by technology

Studies have shown that when the recombination rate of the back is increased from 10cm/s to 10 3 cm/s and 10 5 At cm/s, the conv...

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