The invention discloses a method for removing a
silicon nitride antireflection layer on a
crystalline silicon solar electric surface. A waste
crystalline silicon solar cell containing a
silicon nitride layer is obtained through pretreatment, the waste
crystalline silicon solar cell is put into a high-pressure reaction kettle, water is added as a solution, the high-pressure reaction kettle is transferred to a high-temperature environment to start a reaction after a kettle cover is tightened, and finally a
silicon nitride antireflection layer on the surface of the waste crystalline
silicon solar cell is removed. According to the method, the
silicon nitride antireflection layer on the surface of the crystalline
silicon solar cell is effectively etched and removed in a hydrothermal environment by using pure water as a
solvent and using a high-pressure reaction kettle, and the removal rate of the
silicon nitride antireflection layer can reach 100%. The process is simple and efficient, does not use any chemical
reagent, and is environment-friendly. The method is easy to operate, wide in applicability,
environmentally friendly and free of secondary
pollution. Other chemical reagents are not introduced, the
reaction system is simple and environment-friendly, and effective removal of the
silicon nitride antireflection layer is realized. The applicability is wide, and efficient removal of the antireflection layer can be achieved for crystalline silicon solar cells of different types and different components.