423 results about "Silicon solar cell" patented technology

The invention discloses a back contact solar cell, an assembly and a photovoltaic system, and relates to the field of silicon solar cells. The back contact solar cell comprises a silicon substrate, a first doping layer, a second doping layer, a positive electrode grid line, a negative electrode grid line and a first PAD part. The first doping layers and the second doping layers are alternately arranged along a first direction; the first doped layer comprises a first sub-doped layer, and the second doped layer comprises a second sub-doped layer adjacent to the first sub-doped layer; the second doping sub-layer and the first doping sub-layer form an electric leakage composite contact structure at a preset position; the positive grid line comprises a first sub-positive grid line arranged on the first sub-doping layer, and the negative grid line comprises a first sub-negative grid line arranged on the second sub-doping layer; each group of first PAD parts comprises a first PAD point and a second PAD point, the first PAD point is electrically connected with the first sub positive grid line, and the second PAD point is electrically connected with the first sub negative grid line. By implementing the method, the hot spot effect can be accurately represented at the battery end.

The invention relates to the technical field of crystalline silicon solar cells, and particularly discloses a low parasitic absorption TOPCon solar cell which comprises an N-type silicon substrate, a boron emitter is arranged on the front surface of the N-type silicon substrate, a front passivation layer and an antireflection layer are arranged on the side face of the boron emitter, and a tunneling oxide layer is arranged on the back surface of the N-type silicon substrate. Hydrogenated lightly-doped polycrystalline silicon and hydrogenated heavily-doped polycrystalline silicon are arranged on the side surface of the tunneling oxide layer, and conductive oxide is arranged between the hydrogenated lightly-doped polycrystalline silicon and the hydrogenated heavily-doped polycrystalline silicon. According to the low parasitic absorption TOPCon solar cell provided by the invention, on the basis of a TOPCon cell, the thickened fluorine-doped tin oxide is used as the second conductive oxide layer by utilizing the transparent and conductive characteristics of the fluorine-doped tin oxide. Inward diffusion of phosphorus atoms can be effectively prevented during annealing, and inward diffusion of metal Ag can be limited during sintering. Thus, the thinned outer layer hydrogenated heavily doped Poly-Si is configured through the thickened fluorine-doped tin oxide, so that parasitic absorption is reduced.

The invention belongs to the field of conductive paste, and discloses silver-coated nickel paste, a preparation method of the silver-coated nickel paste and a metallization method of a high-temperature sintered silicon solar cell. The conductive powder in the silver-coated nickel paste accounts for 80-95% by mass of the paste, and the silver-coated nickel paste comprises silver-coated nickel powder and micron silver powder; 1-6% of glass powder; 0.1-3% of organic resin; 0.5%-0.8% of a thixotropic agent; and 0-1% of other auxiliary agents and the balance of solvent. Wherein the conductive powder is a mixture of silver-coated nickel powder and silver powder in a mass ratio of 1: (0-50); the resistivity of the silver-coated nickel powder is less than or equal to 96 mu omega.cm, the antioxidant resistivity is less than or equal to 205 mu omega.cm, and the titrated nickel content is less than or equal to 0.01 mol / L; when the silver-coated nickel paste is used for printing a crystalline silicon solar cell on the single back side, compared with pure silver paste, the silver-coated nickel paste is slightly higher in line resistance, basically level in contact resistance and basically level in printing wet weight, the efficiency is 0%-2% lower than that of the pure silver paste after adjustment, and the silver paste can be used for replacing crystalline silicon solar cell silver paste of pure silver powder. The invention correspondingly discloses a preparation method of silver-coated nickel paste and a metallization method of a high-temperature sintered crystalline silicon solar cell.

The invention provides a laser-assisted sintering method, a crystalline silicon solar cell and a photovoltaic module, and relates to the technical field of crystalline silicon solar cells. The laser-assisted sintering method comprises the steps that a to-be-sintered area of the crystalline silicon solar cell is divided into N equal parts in the direction perpendicular to a fine grid line, the first to Nth to-be-sintered areas which are arranged in sequence are obtained, and N is a positive integer larger than or equal to 4; and laser is adopted to irradiate the metal grid lines on all the to-be-sintered areas, and bias voltage is loaded on the metal grid lines on all the to-be-sintered areas so that the metal grid lines can be sintered. The crystalline silicon solar cell prepared with the metal grid lines is divided into a plurality of to-be-sintered areas, the bias voltage and the laser output power of each to-be-sintered area are controlled, the sintering effect of the metal grid lines can be effectively improved, the crystalline silicon solar cell forms good ohmic contact, and therefore the photoelectric conversion efficiency of the crystalline silicon solar cell is improved.

The invention discloses a back contact solar cell, a cell string, an assembly and a photovoltaic system, and relates to the field of silicon solar cells. The back contact solar cell comprises a silicon substrate, a first doping layer, a second doping layer, a positive electrode grid line, a negative electrode grid line, a first test point and a second test point. The second doping layer is in composite contact with the first doping layer at a preset position to form an electric leakage composite contact structure; the first test point comprises a first test PAD point and a second test PAD point, the first test PAD point is electrically connected with the positive grid line, and the second test PAD point is electrically connected with the negative grid line. The second test point comprises a third test PAD point and a fourth test PAD point, the third test PAD point is electrically connected with the positive grid line, and the fourth test PAD point is electrically connected with the negative grid line. By implementing the embodiment, the characterization of the hot spot resistance effect can be realized at the battery end.

The invention provides a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: annealing a cut solar cell; a passivation solution is coated on the cutting edge of the solar cell, the passivation solution comprises at least one passivator with a passivation functional group, the passivation functional group interacts with the cutting edge, and a passivation film is formed on the cutting edge. The invention further provides the crystalline silicon solar cell piece prepared according to the preparation method and a solar cell comprising the crystalline silicon solar cell piece. According to the invention, the passivation solution is coated after annealing, so that the passivation layer is more stable, the passivation effect is improved, the process is simplified, and the cost is saved.

A back contact solar cell, a preparation method and a battery assembly, which belong to the technical field of crystalline silicon solar cells. The back contact solar cell comprises: a semiconductor substrate, the back surface of which includes first polarity regions and second polarity regions alternately arranged in a first direction; a first functional layer, which is disposed in the first polarity regions; a second functional layer, which is disposed in the second polarity regions; a laser protection layer, which is disposed on the side of the second functional layer away from the semiconductor substrate and exposes electrode contact regions of the second functional layer, wherein the material of the laser protection layer includes laser absorption material; first electrode structures, which are disposed on the side of the first functional layer away from the semiconductor substrate; and second electrode structures, which are disposed on the side of the second functional layer away from the semiconductor substrate and located in the electrode contact regions.

The invention discloses conductive paste, a conductive electrode, a preparation method of the conductive electrode and a crystalline silicon solar cell, and belongs to the technical field of photovoltaic cells, the conductive paste comprises glass powder, silver, nickel and an organic carrier, the glass powder comprises B2O3, corrosive oxide and non-corrosive oxide, and the nickel is added to replace part of silver, so that the usage amount of silver in the conductive paste is reduced, and the cost is reduced. In addition, the molar ratio range of the corrosive oxide and the non-corrosive oxide in the glass powder is limited to be 0.7-2.6. The first passivation layer arranged on the boron diffusion emitter is opened during high-temperature sintering, and the oxidability and the flowability of the glass powder can be balanced to inhibit or delay the formation of an oxidized nickel shell on the surface of the nickel powder, so that a laser enhanced contact post-treatment process is matched; and the photoelectric conversion efficiency of the crystalline silicon solar cell is ensured.

The present application relates to a silicon solar cell, comprising: a silicon substrate, the silicon substrate containing antimony elements, and a carrier separation layer formed on the silicon substrate, wherein the carrier separation layer has antimony elements in at least a portion of a side close to the silicon substrate to form an antimony-containing layer; the peak concentration of the antimony element in the antimony-containing layer is a1, and a1 is equal to or greater than 1E13atoms / cm 3 .

The invention discloses a back contact solar cell, an assembly and a photovoltaic system, and relates to the field of silicon solar cells. Specifically, the back contact solar cell comprises a silicon substrate, a first doping layer, a second doping layer, a positive electrode grid line, a negative electrode grid line and a first PAD part. The second doping layer is in composite contact with the first doping layer at a preset position to form an electric leakage composite contact structure; each group of first PAD parts comprises a first PAD point and a second PAD point, the first PAD point is electrically connected with at least one positive grid line, and the second PAD point is electrically connected with at least one negative grid line; the positive grid line electrically connected with the first PAD point extends along a second direction, and the extension distance is l1; the distance between the first edge and the second edge is L, and l1 / L is greater than or equal to 0.9; the negative grid line electrically connected with the second PAD point extends along a second direction, and the extension distance is l2; l2 / L > = 0.9. By implementing the method, the hot spot effect can be accurately represented at the battery end.

The invention discloses a conductive electrode, a preparation method thereof and a crystalline silicon solar cell, and belongs to the technical field of photovoltaic cells, the conductive electrode comprises a semiconductor base material and a first conductive structure, the semiconductor base material comprises a substrate, a tunneling layer, an n-doped polycrystalline silicon layer and a first passivation layer; the first conductive structure is arranged on the first passivation layer, penetrates through the first passivation layer and is electrically connected with the n-doped polycrystalline silicon layer; wherein the first conductive structure comprises conductive metal, the conductive metal comprises silver, and at least part of the conductive metal penetrates through the first passivation layer and is in electric contact with the face, facing the first passivation layer, of the n-doped polycrystalline silicon layer; and the n-doped polycrystalline silicon layer does not contain silver crystals. Therefore, silver crystals cannot grow into the n-doped polycrystalline silicon layer while the first conductive structure forms ohmic electrical contact with the n-doped polycrystalline silicon layer through the conductive metal, damage to the n-doped polycrystalline silicon layer is effectively reduced, the recombination loss is further reduced, and the photoelectric conversion efficiency of the crystalline silicon solar cell is ensured.

The invention discloses a double-sided flexible solar cell and a preparation method thereof. The solar cell sequentially comprises a flexible semitransparent photovoltaic cell, a curved surface reflector and a flexible photovoltaic cell from top to bottom, wherein the flexible semitransparent photovoltaic cell sequentially comprises a packaging layer, a second transparent electrode, an electron transport layer, a light absorption layer, a hole transport layer and a first transparent electrode from top to bottom; the curved-surface reflecting mirror comprises a curved-surface substrate, a high-reflectivity metal layer and a weather-resistant protective layer from top to bottom in sequence. The flexible photovoltaic cell is one of a perovskite solar cell, an organic solar cell, a CIGS solar cell, a dye-sensitized solar cell, a monocrystalline silicon solar cell, an amorphous silicon solar cell, a cadmium telluride thin film solar cell and a quantum dot solar cell. The double-sided flexible solar cell provided by the invention can solve a series of problems that a traditional flexible solar cell is low in solar spectrum utilization rate, insufficient in photovoltaic and photo-thermal system collaboration, poor in complex curved surface adaptability and the like.

The invention provides a crystalline silicon solar cell and a preparation method thereof. The preparation method comprises the following steps: carrying out anisotropic corrosion treatment on a silicon wafer, and carrying out first texturing; carrying out isotropic corrosion treatment on the silicon wafer; and carrying out anisotropic corrosion treatment on the silicon wafer, and carrying out second texturing. According to the invention, after the first time of texturing, the silicon wafer is subjected to isotropic corrosion treatment, and the bottom of the textured pyramid is corroded, so that the small pyramid at the tower bottom is removed, and finally, the textured pyramid tower bottom is modified through the second time of texturing, so that the textured uniformity is improved, the reflectivity is reduced, and the photoelectric conversion efficiency of the solar cell is improved.

The invention provides a crystalline silicon solar cell metal grid line preparation method, a crystalline silicon solar cell and a photovoltaic module, and relates to the technical field of crystalline silicon solar cells. The preparation method comprises the following steps: printing a plurality of first sub-grid lines arranged in rows or columns by using a knotless screen printing plate, and curing to obtain a first target battery piece; and overprinting a second sub-grid line on each first sub-grid line by adopting a full-opening steel plate, curing and sintering. The first sub-grid lines are printed by adopting a knotless screen printing plate, and then the second sub-grid lines are overprinted by adopting a full-opening steel plate, so that the height-width ratio of the metal grid lines can be improved; the second sub-grid line is overprinted by using the full-opening steel plate, so that the shaping of the metal grid line can be assisted, the surface flatness of the metal grid line is optimized, the broken grid is reduced, the contact resistance is reduced, the formation of high-quality ohmic contact is promoted, a better narrow-line-width design space can be obtained, and the consumption of silver is reduced while the shielding of a light absorption area is reduced; and the production cost of the battery is effectively reduced.

The invention discloses conductive paste, a crystalline silicon solar cell and a preparation method of the crystalline silicon solar cell, and belongs to the technical field of photovoltaic cells. The conductive paste comprises glass powder which accounts for 1.5 wt%-6 wt% of total solids in the conductive paste; an organic carrier accounting for 9 wt% to 15 wt% of total solids in the conductive paste; a first conductive metal, which accounts for 70 wt% to 88 wt% of total solids in the conductive paste; a second conductive metal which accounts for 1 wt% to 10 wt% of the total solid content in the conductive paste; wherein the specific surface area of the second conductive metal is larger than 0.5 m < 2 > / g and smaller than 1.8 m < 2 > / g, and the second conductive metal is selected from nickel or nickel alloy. The nickel or the nickel alloy with the specific surface area is adopted to replace part of silver, the influence on the density of a sintered silver structure and the conductivity of a silver / nickel electrode can be reduced, the photoelectric conversion efficiency of the solar cell can be maintained by adding the nickel powder, and the preparation cost of the solar cell can be reduced by reducing the use amount of the silver.

The invention belongs to the field of precious metal recovery, and particularly relates to a method for leaching silver from a silver-containing retired crystalline silicon solar cell. According to the method, the silver in the silver-containing decommissioned crystalline silicon solar cell is recycled and leached through the synergistic effect of an HNO3-H2O2-Fe < 3 + > composite leaching agent and ionic liquid, and the ionic liquid is prepared from choline chloride and malonic acid. Meanwhile, the leaching rate of silver is further improved by optimizing experimental parameters such as the reaction temperature, the reaction time and the H2O2 supply frequency in the three-section gradient temperature control leaching reaction. Compared with the traditional technology, the method disclosed by the invention is green and environment-friendly, low in cost, small in acid consumption and high in recovery rate.

The invention discloses conductive silver paste for a solar cell and application of the conductive silver paste, and belongs to the technical field of conductive silver paste. According to the invention, the prepared silver paste is printed on a silicon wafer cell in a silk-screen printing manner, so that the good rheological property of printing can be obtained. And a rheometer is introduced for testing, and an SEM scanning electron microscope is introduced for checking the surface appearance of the silver grid line. The invention discloses a TOPCon silicon wafer for a silicon solar cell, which comprises the following components in percentage by weight: 82-90% of silver powder, 20-30% of glass powder and 20-30% of organic carrier. 2-5% of glass powder; and 8-13% of an organic carrier. The conductive silver paste with good rheological property is prepared by using a mixture of polyamide wax and hydrogenated castor oil in a mass ratio of 1: 1 as a thixotropic agent. The main grid silver paste for the silicon solar cell provided by the invention can be well matched with step-by-step printing of a cell piece, different proportions of the binder and the thixotropic agent are used, the photoelectric conversion efficiency is high, the peeling strength of the main grid is high, and the step-by-step printing main grid paste requirements of current different types of paste and cell pieces can be well met.

The invention provides a crystalline silicon solar cell and a perovskite / crystalline silicon laminated solar cell, and belongs to the technical field of solar cells. The crystalline silicon solar cell comprises a cell body, the surface of the cell body is provided with a suede structure, the suede structure comprises a plurality of first pyramids, and each first pyramid comprises a first tower bottom and a first tower top which are arranged in the direction away from the surface of the cell body; and gaps exist between the first tower bottom boundaries of at least part of adjacent first pyramids in the plurality of first pyramids. The crystalline silicon solar cell or the perovskite / crystalline silicon laminated solar cell is based on the improvement of the textured structure, has better light utilization rate and passivation effect, and is beneficial to improving the cell performance.

The present invention belongs to the field of conductive pastes, and discloses a silver-coated nickel paste, a preparation method thereof, and a method for metallizing a high-temperature sintered crystalline silicon solar cell. In the silver-coated nickel paste, the conductive powder accounts for 80-95% by mass of the paste, and the components are silver-coated nickel powder and micron silver powder; the glass powder is 1-6%; the organic resin is 0.1-3%; the thixotropic agent is 0.5-0.8%; other additives are 0-1% and the balance is solvent. Among them, the conductive powder is a mixture of silver-coated nickel powder and silver powder with a mass ratio of 1:(0-50); the resistivity of the used silver-coated nickel powder is ≤96 μΩ·cm, the oxidation-resistant resistivity is ≤205 μΩ·cm, and the titrated nickel content is ≤0.01 mol / L; when using this silver-coated nickel paste to single-backprint crystalline silicon solar cell wafers, compared with pure silver paste, the line resistance is slightly higher, the contact resistance is basically the same, and the printing wet weight is basically the same. After adjustment, the efficiency is 0% to 2% lower than that of pure silver paste, and it can be used to replace the silver paste of crystalline silicon solar cells with pure silver powder. The present invention correspondingly discloses a preparation method of the silver-coated nickel paste and a method for metallizing a high-temperature sintered crystalline silicon solar cell.

A conductive multilayer stack or a conductive multilayer line useful as a metallization layer in photovoltaics as well as other devices; solar cells having a conductive multilayer stack or line; solar modules having such cells; and methods of forming a conductive multilayer stack or line. The conductive multilayer stack or line having a metal layer including copper (Cu) or coated aluminum; a silver contact layer; and a solderable layer between, and contacting, the metal layer and the silver contact layer.

The embodiment of the invention relates to the photovoltaic field, and provides a cyanide-free electroplating silver-coated copper conductive material, a preparation method thereof and a crystalline silicon solar cell. The silver-coated copper electrode provided by the embodiment of the invention comprises a copper core and a copper-tin alloy electroplated layer coated on the surface of the copper core, the surface of the pre-plating material is coated with the silver electroplating layer; the surface of the silver-coated copper material is coated with the self-repairing layer; wherein the self-repairing layer comprises a resin film and a pH response type microcapsule, the microcapsule is embedded in the resin film, and the microcapsule is filled with an ammonium molybdate corrosion inhibitor. The copper-silver interface bonding force can be improved through the copper-tin alloy electroplated layer, and the silver layer material does not contain cyanogen and is environmentally friendly; the corrosion inhibitor in the pH response type microcapsule in the self-repairing film layer on the surface of the silver layer is released under a specific pH condition to form a protection film on the silver layer again, so that the self-repairing purpose is achieved, and the dynamic protection effect is achieved.

The invention provides a crystalline silicon solar cell, a laser sintering pattern, a processing method and related equipment, and relates to the technical field of solar cells. According to the method, redundant laser sintering coverage space is provided for the crystalline silicon solar cell through the laser sintering pattern, so that the corresponding crystalline silicon solar cell can be sintered to the maximum extent, and the problem of edge blackening of the corresponding EL test image is effectively solved; meanwhile, the laser sintering pattern can also ensure that the middle area of the crystalline silicon solar cell is subjected to two times of laser scanning processing, so that carriers corresponding to the middle area are fully excited to form enough metal silicon contact points, the problem of pocking marks or blackening in the middle of an image corresponding to an EL test image is effectively solved, and the performance of the solar cell is improved. Therefore, on the basis that the metal contact resistance of the corresponding solar cell is effectively reduced by using the laser-induced sintering technology, the photoelectric conversion efficiency and the cell production yield of the corresponding solar cell are effectively improved.

The invention provides a tin electroplating solution, a preparation method thereof and a preparation method of a crystalline silicon solar cell, and particularly relates to the technical field of solar cell preparation. The tin electroplating liquid comprises tin methanesulfonate, methanesulfonic acid, a brightener, a stabilizer, a grain refiner, a defoaming agent and water. In the tin electroplating solution, the stabilizer ensures the chemical stability of the tin electroplating solution in long-term use and storage; the microstructure of the coating is further optimized through the synergistic effect of the grain refiner and the defoaming agent; tin methanesulfonate is used as a main salt to provide a high-purity tin source, and the high efficiency and controllability of electroplating reaction are ensured by combining with a strong acid environment of methanesulfonic acid; and the metallic luster and the surface flatness of the plating layer are further enhanced by introducing the brightening agent. The tin electroplating liquid system shows remarkable advantages in the aspects of stability, plating quality and process applicability through cooperation of the raw materials, and the electroplating quality of a tin layer is improved.

The invention discloses a pretreatment process for water reuse of silicon solar cell wastewater, which comprises a collection device, the output end of the collection device is communicated with a pretreatment device 1, the output end of the pretreatment device 1 is communicated with a pretreatment device 2, the output end of the pretreatment device 2 is communicated with a pretreatment device 3, and the output end of the pretreatment device 3 is communicated with a pretreatment device 4. The output end of the pretreatment device 3 is communicated with a rear-end reclaimed water recycling membrane system. The method has the advantages that specific pollutants influencing the reclaimed water reuse membrane system are subjected to targeted grading pretreatment, a new thought is provided for recycling of the silicon solar cell wastewater, and remarkable environmental benefits and economic benefits are achieved; the problems of low water production rate, short service life, high operation cost and incapability of continuous and stable operation of a reclaimed water recycling membrane system for silicon solar cell wastewater are solved.

The invention relates to the field of silicon solar cells, and particularly discloses a back contact cell module and a photovoltaic system. The battery string comprises a first battery string and a second battery string which are adjacently arranged; the first battery string comprises a first end part battery piece and a first edge welding strip, and the second battery string comprises a second end part battery piece, a second edge welding strip and a first secondary edge welding strip; the first edge welding strip and the first secondary edge welding strip are electrically connected with the bus bar respectively; the back contact battery assembly satisfies the following relation: 1.2 (M + N) < L < 2 (M + N); l is the distance between the first edge welding strip and the first secondary edge welding strip, M is the distance between the second edge welding strip and the first secondary edge welding strip, and N is the distance between the second edge welding strip and the edge of the second end battery piece. By implementing the invention, the capacity and yield of equipment can be improved, pseudo soldering is avoided, and the reliability of the assembly is improved.

The invention belongs to the technical field of photovoltaics, and particularly relates to a heterojunction crystalline silicon solar cell and a preparation method and application thereof. According to the heterojunction crystalline silicon solar cell provided by the invention, MoSz-QD is embedded in the SiOy layer, molybdenum sulfide (MoSz) has good electrical properties, and rapid migration of carriers is facilitated; meanwhile, the band gap of the MoSz-QD can be broadened to gt; 3.0 eV, so that high Ec is formed on an interface to prevent electron transport, and the blocking effect of non-selective carriers (electrons) can be realized; moOx is deposited on the surface of MoSz-QD, an impurity energy level is formed through defect engineering, and only holes are allowed to utilize traps to assist tunneling to form effective transportation, so that the heterojunction crystalline silicon solar cell provided by the invention is a high-performance heterojunction crystalline silicon solar cell; the technical problem that in the prior art, a solar cell with a transition metal oxide (TMO) selective contact layer is poor can be solved.

The embodiment of the invention provides a crystalline silicon solar cell, a crystalline silicon-perovskite laminated cell, a corresponding preparation method and a photovoltaic module. The crystalline silicon solar cell comprises a first transparent conductive layer, a back surface field structure, a silicon substrate, a passivation contact structure and a second transparent conductive layer which are stacked in sequence, and the back surface field structure is a laminated structure for forming a back surface field on the back surface of the silicon substrate. According to the crystalline silicon solar cell, the passivation contact structure is formed on the front surface of the silicon substrate, the back surface field is formed on the back surface of the silicon substrate, the transparent conductive layers are stacked on the front surface and the back surface of the crystalline silicon solar cell, and the second transparent conductive layer can passivate hydrogenation bonds on the surface of a silicon wafer and has conductivity; therefore, the front and back electrodes of the crystalline silicon solar cell can be prepared by adopting low-temperature slurry, and the crystalline silicon solar cell is prevented from being damaged by high temperature.

The invention relates to the field of solar cells, and discloses a texturing method for a silicon wafer of a crystalline silicon solar cell, which comprises the following steps of: S1, carrying out primary crystallization treatment on the silicon wafer by laser; s2, primary alkali polishing; s3, carrying out laser patterning secondary crystallization treatment on the bottom of the line mark groove on the silicon wafer; s4, carrying out secondary alkali polishing; s5, the silicon wafer is immersed in an HF / HNO3 mixed solution for pretreatment, and a porous silicon layer is generated on the surface of the silicon wafer; and S6, performing alkali texturing. According to the method, the silicon wafer is subjected to primary laser crystallization, primary alkali polishing, secondary laser crystallization, secondary alkali polishing and HF / HNO3 system pretreatment, so that the texturing time can be greatly shortened, the pyramid textured surface generated on the surface of the silicon wafer is more uniform, and the textured surface reflectivity can be effectively reduced.

The invention discloses a solar cell performance simulation method based on FDTD (Frequency Division Time Division) solution, which comprises the following steps of: 1, looking up optical parameters of materials in a solar cell, and inputting the optical parameters into a material library; 2, establishing an optical model of the solar cell; 3, setting a simulation area and positions and types of refraction and reflection monitors; light intensity and wavelength of an incident source are set according to sunlight; 4, setting applied boundary conditions, and setting grid precision; 5, establishing a complete solar cell optical model; step 6, carrying out simulation calculation on the performance of the crystalline silicon solar cell, and analyzing carrier generation rate and short-circuit current density factors; 7, performing statistical analysis on all calculation results in the step 6, and calculating refraction, reflectivity, carrier generation rate and short-circuit current density factors of the solar cell; according to the invention, the problems of unclear cell efficiency influence factors, incomplete optical properties and small dimensions are solved from the microscopic perspective.

The invention provides a crystalline silicon solar cell with high conversion efficiency and a preparation process thereof, and belongs to the technical field of solar cell preparation. The preparation process comprises the following steps: pretreating a crystal silicon wafer; preparing a bionic micro-nano composite film; preparing a composite structure on the surface of the silicon wafer; preparing the glass powder doped with the phosphorus-doped graphene; preparing a positive electrode conductive slurry; and preparing the crystalline silicon solar cell. The CuS nanocrystals / quantum dots are deposited on the surface of the bionic micro-nano composite film, the effects of antireflection, passivation and sensitization of the silicon wafer can be achieved, the photoelectric conversion efficiency of the battery is further improved, the CuS nanocrystals / quantum dots are deposited, the absorption range of the silicon wafer to the optical wavelength can be increased, and the photoelectric conversion efficiency of the battery is improved. Meanwhile, one absorbed photon can be converted into a plurality of photon-generated carriers through the CuS quantum effect, and the photoelectric conversion efficiency of the cell is improved.