Making method for selective transmission node crystal silicon solar battery

A technology of silicon solar cells and crystals, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high price, high cost, and low requirements for graphic precision, achieve low equipment investment, high production efficiency, and overcome equipment investment expensive effect

Inactive Publication Date: 2008-01-09
CHINA SUNERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since lithography technology is mainly used in the field of semiconductors and integrated circuits, the equipment is expensive and costly, and cannot be adapted to mass production of solar cells. The crystalline silicon solar cell industry is characterized by low requirements for graphic precision And the requirements for production efficiency are very high
This is also an important reason why although lithography technology is very mature, it has not been applied in the crystalline silicon solar cell industry.

Method used

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  • Making method for selective transmission node crystal silicon solar battery
  • Making method for selective transmission node crystal silicon solar battery
  • Making method for selective transmission node crystal silicon solar battery

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Embodiment 1

[0035] Embodiment 1: As shown in FIG. 3 , a method for preparing a selective emission crystalline silicon solar cell. First high-concentration diffusion, then low-concentration diffusion embodiment, the process is as follows:

[0036] 1. Remove the surface damage of the silicon wafer, form an anti-reflection surface structure and chemical cleaning.

[0037] 2. Thermal oxidation growth of silicon dioxide layer.

[0038] 3. On the silicon dioxide layer of the crystalline silicon wafer, the etchant is printed by printing process, and the electrode window is formed by etching, and then, in the electrode window area, POCl 3 Diffusion of high-concentration doping is carried out in the atmosphere. The process steps of printing etchant and corroding to form the electrode window are:

[0039] The etchant is printed on the surface of the silicon wafer with a silicon dioxide layer where electrodes need to be made (the printing process is the same as that of printing the front and back...

Embodiment 2

[0046] Embodiment 2, as shown in FIG. 4 , a method for preparing a selective emission crystalline silicon solar cell. Low-concentration diffusion first, followed by high-concentration diffusion embodiment, the process is as follows:

[0047] Remove surface damage of silicon wafer, form anti-reflection surface structure and chemical cleaning. crystalline silicon wafer in POCl 3Carry out low-concentration diffusion in the atmosphere, then thermally oxidize and grow a silicon dioxide layer on the surface of the diffused crystalline silicon wafer, and then print an etchant on the silicon dioxide layer where electrodes need to be made, and the etchant is ammonium bifluoride with a concentration of 25% . After the etchant fully corrodes the silicon dioxide layer on the surface of the silicon wafer to be used as an electrode, the silicon wafer is cleaned to remove the etchant and form an electrode window. In the electrode window area the POCl 3 Diffusion of high-concentration dop...

Embodiment 3

[0048] Embodiment 3, as shown in FIG. 5 , a method for preparing a selective emission crystalline silicon solar cell. The embodiment of simultaneous high and low concentration diffusion, the process steps are as follows:

[0049] Remove surface damage of silicon wafer, form anti-reflection surface structure and chemical cleaning. Thermally oxidize and grow a silicon dioxide layer on the surface of the crystalline silicon wafer, the thickness of the silicon dioxide layer is 6nm; use a printing process to print an etchant on the silicon dioxide layer of the crystalline silicon wafer, and the etchant is ammonium bifluoride with a concentration of 20%, etch to form electrode windows, and then, the POCl 3 Doping diffusion is carried out in the atmosphere, forming high-concentration doping diffusion in the electrode window area, and forming high-concentration doping diffusion in other areas of the crystalline silicon wafer. Remove the peripheral and back PN junctions. Surface pas...

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Abstract

The invention is concerned with the making method of the selective emitter crystal silicon solar cell including high thickness doping diffusion. It is to form the electrode window on the silicon dioxide layer of the crystal silicon chip with the printer technique cauterant, next is to conduct high thickness doping diffusion in the POCl3 atmosphere of the electrode window sector. The invention is with low cost but high productivity.

Description

technical field [0001] The invention relates to a method for preparing a crystalline silicon solar cell, in particular to a method for preparing a selective emission crystalline silicon solar cell. Background technique [0002] At present, the mature commercial production of crystalline silicon solar cells has developed rapidly due to the advantages of simple process flow and convenient mass production. As shown in Figure 1, the basic process flow of such a battery is: remove the surface damage of the silicon wafer, form an anti-reflection surface structure and chemical cleaning → in POCl 3 Diffusion in the atmosphere → removal of peripheral PN junction → surface passivation and deposition of anti-reflection layer → screen printing front and back electrodes and back surface field → sintering to form ohmic contact → test binning. This commercial production process of crystalline silicon solar cells has the characteristics of simple process, high degree of equipment automatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赵建华王艾华高鹏王继磊姚文杰连维飞
Owner CHINA SUNERGY CO LTD
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