42019 results about "Atmosphere" patented technology

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

An exhaust port assembly comprising a conduit carries a flow of gas. A vent assembly having a fixed exhaust area is provided on the conduit for venting a flow of exhaust gas from within the conduit to ambient atmosphere. The vent assembly is configured so as to minimize noise associated with the flow of exhaust gas passing to atmosphere, diffuse the flow of exhaust gas passing to ambient atmosphere over a relatively large area, and minimize the area occupied by the venting assembly on the conduit.

The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and / or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

A point-to-point, wireless, millimeter wave communications link between two stations at least one of which is a mobile station. A millimeter wave transmitter system operating at frequencies higher than 57 GHz with a tracking antenna producing a beam having a half-power beam width of about 2 degrees or less and a millimeter wave receiver also with a tracking antenna having a half-power beam width of about 2 degrees or less. In preferred embodiments each mobile station has a global position system (GPS) and a radio transmitter and both tracking antennas are pointed utilizing GPS information from the mobile station or stations. The GPS information preferably is transmitted via a low frequency, low data rate radio. Each millimeter wave unit is capable of transmitting and / or receiving, through the atmosphere, digital information to / from the other station at rates in excess of 155 million bits per second during normal weather conditions. In preferred embodiments actually built and tested by Applicants digital information has been transmitted at rates of 1.25 gigabits per second. Preferred communication links described here are millimeter wave links operating at frequencies of 71-73 GHz and 74-76 GHz mounted on simple two-axis gimbals. Pointing information of the required accuracy is provided by GPS receivers and standard radio links which send the GPS calculated positions to the millimeter wave systems at the opposite end of the link. In these embodiments there is no need for any complicated closed loop pointing information derived from received signal intensity or phase. On moving platforms locally generated inertial attitude information is combined with the GPS positions to control pointing of the gimbaled transceivers.

According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.