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41951 results about "Atmosphere" patented technology

An atmosphere (from Ancient Greek ἀτμός (atmos), meaning 'vapour', and σφαῖρα (sphaira), meaning 'ball' or 'sphere') is a layer or a set of layers of gases surrounding a planet or other material body, that is held in place by the gravity of that body. An atmosphere is more likely to be retained if the gravity it is subject to is high and the temperature of the atmosphere is low.

Home automation system and method

A home automation system and method for automatic control of controlled devices throughout a home. A unique architecture of occupancy sensors includes entry/exit sensors for detecting movement through doorways that separate rooms in the home, room motion sensors for detecting room occupancy, spot sensors to detect occupancy of specific locations within the rooms, and house status sensors to detect the status of certain parameters of the home. A central controller communicates with the sensors and controlled objects over a communications network, where the sensors and controlled objects can be added to the system in a ‘plug and play’ manner. The central controller controls the controlled objects in response to the entry/exit sensors, room motion sensors, spot sensors and the house status sensors. This control is accomplished by assigning each room to one of a plurality of room occupancy states, and to one of a plurality of room modes for creating desired room atmospheres using the controlled objects, which both dictate how the controlled objects are controlled by the central controller. The room modes travel from room to room as the occupant moves throughout the home, and multiple occupants can be using different room modes as they move about the home. The controlled objects also have controlled object states, which are used by the central controller to control the controlled objects.
Owner:HOME DIRECTOR

Film deposition apparatus and film deposition method

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.
Owner:TOKYO ELECTRON LTD

Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same

A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
Owner:SAMSUNG DISPLAY CO LTD

Film deposition apparatus and film deposition method

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.
Owner:TOKYO ELECTRON LTD

Mobile millimeter wave communication link

A point-to-point, wireless, millimeter wave communications link between two stations at least one of which is a mobile station. A millimeter wave transmitter system operating at frequencies higher than 57 GHz with a tracking antenna producing a beam having a half-power beam width of about 2 degrees or less and a millimeter wave receiver also with a tracking antenna having a half-power beam width of about 2 degrees or less. In preferred embodiments each mobile station has a global position system (GPS) and a radio transmitter and both tracking antennas are pointed utilizing GPS information from the mobile station or stations. The GPS information preferably is transmitted via a low frequency, low data rate radio. Each millimeter wave unit is capable of transmitting and / or receiving, through the atmosphere, digital information to / from the other station at rates in excess of 155 million bits per second during normal weather conditions. In preferred embodiments actually built and tested by Applicants digital information has been transmitted at rates of 1.25 gigabits per second. Preferred communication links described here are millimeter wave links operating at frequencies of 71-73 GHz and 74-76 GHz mounted on simple two-axis gimbals. Pointing information of the required accuracy is provided by GPS receivers and standard radio links which send the GPS calculated positions to the millimeter wave systems at the opposite end of the link. In these embodiments there is no need for any complicated closed loop pointing information derived from received signal intensity or phase. On moving platforms locally generated inertial attitude information is combined with the GPS positions to control pointing of the gimbaled transceivers.
Owner:TREX ENTERPRISES CORP
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