50433 results about "Product gas" patented technology

The invention provides a plastic ampoule filled with medicinal liquid, which has the functions of blocking gas, water vapor and light and preventing drug penetration, absorption and adsorption, and a preparation method thereof. The plastic ampoule 10 for filling medicinal solution of the present invention comprises a container main body 11, a fused portion 13 closing its opening 12 and a holding portion 14 connected thereto for twisting. The ampoule 10 is formed using a parison having two or more layers, at least one of which is a material selected from the group consisting of gas transmission, water vapor transmission, light transmission, drug transmission and A functional layer that prevents at least one of drug absorption and adsorption properties. That is, the parison is extruded from a multi-layer blow mold, clamped by the lower parting die to form the main body part 11 of the container, and after filling the liquid medicine 15 therein, the opening part 12 is clamped by the upper parting die to form a fusion joint. Part 13 and holding part 14, thereby making the product of the present invention.

A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and / or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.

A process is disclosed for the in situ conversion and recovery of heavy crude oils and natural bitumens from subsurface formations using either a continuous operation with one or more vertical injection boreholes and one or more vertical production boreholes in which multiple, uncased, horizontal boreholes may extend from the vertical boreholes, or a cyclic operation whereby both injection and production occur in the same vertical boreholes in which multiple, uncased, horizontal boreholes may extend from the vertical boreholes. A mixture of reducing gases, oxidizing gases, and steam are fed to downhole combustion devices located in the injection boreholes. Combustion of the reducing gas-oxidizing gas mixture is carried out to produce superheated steam and hot reducing gases for injection into the formation to convert and upgrade the heavy crude or bitumen into lighter hydrocarbons. Communication between the injection and production boreholes in the continuous operation and fluid mobility within the formation in the cyclic operation is induced by fracturing, multiple horizontal boreholes extending from vertical boreholes, or other related methods. In the continuous mode, the injected steam and reducing gases drive upgraded hydrocarbons and virgin hydrocarbons to the production boreholes for recovery. In the cyclic operation, wellhead pressure is reduced after a period of injection causing injected fluids, upgraded hydrocarbons, and virgin hydrocarbons in the vicinity of the boreholes to be produced. Injection and production are then repeated for additional cycles. In both operations, the hydrocarbons produced are collected at the surface for further processing.