19135 results about "Silanes" patented technology

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si_xC_yN_z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.

The classes of compounds are generally represented by the formulas:

• • and mixtures thereof, wherein R and R¹ in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R¹ in formula A also being combinable into a cyclic group, and R² representing a single bond, (CH₂)_n, a ring, or SiH₂.

A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

wherein R¹ is selected from linear or branched C₃ to C₁₀ alkyl group, linear or branched C₃ to C₁₀ alkenyl group, linear or branched C₃ to C₁₀ alkynyl group, C₁ to C₆ dialkylamino group, electron withdrawing group, and C₆ to C₁₀ aryl group; R² is selected from hydrogen, linear or branched C₁ to C₁₀ alkyl group, linear or branched C₃ to C₆ alkenyl group, linear or branched C₃ to C₆ alkynyl group, C₁ to C₆ dialkylamino group, C₆ to C₁₀ aryl group, linear or branched C₁ to C₆ fluorinated alkyl group, electron withdrawing group, and C₄ to C₁₀ aryl group; optionally wherein R¹ and R² are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material.

A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH₃) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.

The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N₂O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causing incomplete reaction upon a gas phase reaction is applied to generate nano particle. The nano particle is then reacted to oxygen radical to form the insulating film including a plurality of nano voids. A low-dielectric insulating film that can be applied to the nano technology even in the existing LECVD equipment is formed.

An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (Si_nH_2n+2) process gas and/or is deposited from a plasma having a density of at least 1×10¹¹ ions/cm³.

An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

The object of the present invention is to provide a carbon nanotube composition that does not impair the characteristics of the carbon nanotubes itself, allows the carbon nanotubes to be dispersed or solubilized in a solvent, does not cause separation or aggregation of the carbon nanotubes even during long-term storage, has superior electrical conductivity, film formability and moldability, can be easily coated or covered onto a base material, and the resulting coated film has superior moisture resistance, weather resistance and hardness; a composite having a coated film composed thereof; and, their production methods. In order to achieve this object, the present invention provides a carbon nanotube composition that contains a conducting polymer (a) or heterocyclic compound trimer (i), a solvent (b) and carbon nanotubes (c), and may additionally contain a high molecular weight compound (d), a basic compound (e), a surfactant (f), a silane coupling agent (g) and colloidal silica (h) as necessary; a composite having a coated film composed of the composition; and, their production methods.

At a frame 26 in a microwave plasma processing apparatus 100, numerous horizontal spray gas nozzles 27 formed therein injection holes A and numerous vertical gas nozzles 28 formed therein injection holes B are fixed. A first gas supply means 50 injects argon gas through the injection holes A into an area near each dielectric parts 31a. A second gas supply means 55 injects silane gas and hydrogen gas through the injection holes B into a position at which the gases do not become over-dissociated. The gases injected as described above are raised to plasma with a microwave transmitted through each dielectric parts 31a. Since the vertical gas nozzles 28 are mounted at positions at which they do not block the flow of plasma traveling toward a substrate G, ions and electrons do not collide with the vertical gas nozzles 28 readily.

Micro-mechanical devices, such as MEMS, having layers thereon, and methods of forming the layers, are disclosed. In one aspect, a method may include forming a layer including an oxide of aluminum over at least a portion of a micro-mechanical device, and coating the layer by bonding material to surface hydroxyl groups of the layer. In another aspect, a method may include introducing a micro-mechanical device into an atomic layer deposition chamber, and substantially filling nanometer sized voids of the micro-mechanical device by using atomic layer deposition to introduce material into the voids. In a still further aspect, a method may include introducing an alkylaminosilane to a micro-mechanical device having a surface hydroxyl group, and bonding a silane to the micro-mechanical device by reacting the alkylaminosilane with the surface hydroxyl group.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:

In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.